CN1629991A - Method for preparation of thin-medium chip ceramic capacitor with large number of layers - Google Patents
Method for preparation of thin-medium chip ceramic capacitor with large number of layers Download PDFInfo
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- CN1629991A CN1629991A CNA2003101125631A CN200310112563A CN1629991A CN 1629991 A CN1629991 A CN 1629991A CN A2003101125631 A CNA2003101125631 A CN A2003101125631A CN 200310112563 A CN200310112563 A CN 200310112563A CN 1629991 A CN1629991 A CN 1629991A
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Abstract
This invention discloses a method for preparing thin medium and large layer number chip type ceramic capacitor which adopts multi-layer coating, vacuum degassing, classified filtering and classified heating laminating etc technologies. Said invention can effectively raise compactness of ceramic body and keep consistency of capacity, voltage resisting, loss, and insulation etc property of thin medium and large number layer MLCC.
Description
Technical field
The present invention relates to the preparation method of high-rise several pieces formula ceramic capacitors of a kind of thin-medium.Specifically, the present invention relates to a kind of method that adopts stack technology to prepare high-rise several pieces formula ceramic capacitors of thin-medium.
Background technology
Multiple-layer sheet ceramic capacitor MLCC (Multilayer Ceramic Capacitor) is a kind of novel surface mounted with electronic components, having high specific volume, highly reliable, characteristics such as frequency characteristic is good, is at electronic information, computer, electronic device is very widely used in field such as control and communication automatically.Direction develops and the developing rapidly of integrated circuit surface mounting technique to miniature, thin layer, mixing be integrated etc. along with electronic equipment and components and parts, and the demand of high-performance MLCC is grown with each passing day.Microminiaturization, high capacity, high reliability and low cost are the MLCC developing direction.The method that realizes high capacity is the number of plies that adopts the ceramic dielectric of high-k, reduces the thickness and the increase ceramic dielectric of ceramic dielectric.But along with the reduction of dielectric thickness and the increase of the medium number of plies, stack technology material and medium is proposed higher requirement, the imperfection of existing manufacturing technology increases the defective products of thin-medium, high number of plies capacitor, and production cost improves.
The multiple-layer sheet ceramic capacitor dielectric material is mostly with BaTiO at present
3Be base, by to BaTiO
3The research of the composition of ferroelectric ceramic material, preparation, microstructure and dielectric property adjusts rational prescription, inquire into simultaneously crystal structure, atmosphere sintering mechanism, interior electrode and the porcelain of porcelain coupling, burn the influence to the porcelain dielectric property such as end technology.In order to satisfy electronic equipment constantly to the requirement of microminiaturization, thin layerization, high performance development, MLCC also constantly develops to miniaturization, big capacity, low cost and high reliability direction.Realize the miniaturization of MLCC, big capacity and low cost, effective method is exactly to increase the medium number of plies, reduce thickness of dielectric layers and adopt the interior electrode of base metal nickel as MLCC.Make 5 μ m with medium diaphragm, then need and disperse casting technique to improve just accordingly and can achieve the goal at raw material, adhesive system down to 1 μ m.The making of the high number of plies, thin-medium MLCC is with respect to conventional MLCC, to from raw material to the manufacture craft and equipment all requirements at the higher level to be proposed.
The coating process of medium, the one, adopt the method for steel band curtain coating to carry out the coating of deielectric-coating, the deielectric-coating thickness of outflow is generally greater than 10 microns, then lamination, on ceramic dielectric films the silk-screen electrode, need the medium number of plies until reaching electric capacity.This kind method be because dielectric thickness greater than 10 microns, can't be done the high number of plies, big capacity MLCC; The 2nd, coated media film on the PET film carrier tape, the dielectric thickness that can apply is minimum to reach 1 micron, and silk-screen electrode on the deielectric-coating band is peeled off the deielectric-coating that is printed on electrode pattern again from the PET carrier band then, lamination afterwards is till reaching electric capacity and needing the medium number of plies; It is first stripped ceramic deielectric-coating from the PET carrier band that technology is also arranged, afterwards lamination, on ceramic dielectric films the silk-screen electrode, need the medium number of plies until reaching electric capacity.Though the two kinds of technologies in back all can reach thin-medium, but because dielectric thickness is below 5 microns, medium is difficult to strip down or stripping process can damage medium from the PET film, causes the high number of plies MLCC product percent of pass of thin-medium not high, and the present invention can better address this problem.
In addition, along with increasing of the medium number of plies, the compactness of idiosome also produces considerable influence to sintering character before the sintering, and the while also is easy to generate layering and side is split phenomenon.For high number of plies product, laminating technology also is a key factor.Traditional laminating technology generally adopts hydrostatic pressing, the employing conventional oil compression technology that also has, but can not satisfy the requirement of the high number of plies MLCC product of thin-medium.
Goal of the invention
The purpose of this invention is to provide a kind of method for preparing high-rise several pieces formula ceramic capacitors of thin-medium that can overcome above-mentioned shortcoming.
Method of the present invention may further comprise the steps:
(1) ceramic medium material is made the porcelain slurry;
(2) the prepared porcelain of step (1) slurry is carried out vacuum degassing and classified filtering, make that the grain diameter of ceramic medium material is controlled between the 0.1-3.0 μ m in the porcelain slurry;
(3) form one deck dielectric film equably with resulting porcelain slurry in the step (2);
(4) resulting dielectric film in the step (3) is carried out drying;
(5) in step (4), form electrode layer on the resulting dried dielectric film;
(6) the resulting dielectric film that has electrode layer in the step (5) is carried out drying;
(7) repeat in above-mentioned steps (3)-(6) formation dielectric film, drying, form electrode layer, dry operation more again, up to the media electrode layer that forms 2-40 layer electrode layer;
(8) resulting in the strip step (7), composite type media electrode layer with 2-40 layer electrode layer carries out lamination to combination layer then, and the mode with the classification heated lamination presses solidly again;
(9) product after resulting the pressing solidly in the step (8) is cut, make unsintered chip;
(10) with in the step (9) not the sintering chip carry out sintering earlier, coat electrode slurry in its end again, perhaps coat earlier electrode slurry, carry out sintering again in its end, make high-rise several pieces formula ceramic capacitors of thin-medium.
In step (1), should select suitable ceramic medium material.In general, traditional dielectric material crystal grain generally is being (Y5V) and about 1 micron (X7R) about 5 microns, but for the high number of plies capacitor of the present invention, dielectric thickness with respect to 3-5 micron (Y5V) and 1-3 micron (X7R), grain size is obviously undesirable, because for MLCC, each dielectric layer needs 2-3 more than the crystal grain at least.In addition, thin-medium also proposes requirements at the higher level to granule size, dispersiveness, the granule-morphology of porcelain, otherwise is difficult to obtain stable, uniform high-quality dielectric film.To the control of porcelain crystal grain and the dispersiveness that improves porcelain, be the basis that makes thin-medium, the high number of plies.
In order to make ceramic medium material have superior dielectric properties, we can carry out comprehensive doping vario-property to its material composition in step (1), and modified materials commonly used comprises Zr
4+, Ca
2+, Mn
2+, Mg
2+, Co
3+, Cr
3+, Fe
3+Nb
5+, Y
3+Plasma oxidation thing and Sm
3+, La
3+, Eu
3+, Dy
3+Deng rare earth oxide, make its sintering in reducing atmosphere that more stable performance be arranged.In the present invention, the high-purity BaTiO that adopt preferably that granularity is thin, good sphericity, distribution is concentrated, easily disperseed
3, BaZrO3, or (Ba,, Ca) (Zr, mixture Ti) or solid solution (are used for Y5V material granule degree D as raw material
50Be the 0.1-0.6 micron, be used for X7R BaTiO
3Granularity D
50Be the 0.1-0.6 micron, the granule-morphology almost spherical).Wherein, (Ba,, Ca) (Zr, Ti) the theoretical general formula of porcelain is:
(Ba
1-xCa
x)
m(Ti
1-yZr
y)O
3+A
In the formula, A represents MnCO
3, MnO
2, Nb
2O
5, Y
2O
3, ZnO, Er
2O
3, Ho
2O
3, SiO
2, CaCO
3, BaCO
3, MgO, Mg (OH)
2In one or more compound interpolations.
Reach 1 micron with dielectric thickness that above-mentioned porcelain was coated with is minimum, crystal grain can be controlled in the production requirement that 1.5-3 μ m (Y5V) and 0.1-0.6 micron (X7R) are suitable for the medium thin layerization.
If the present invention selects BaTiO
3As main raw material(s), then it should have higher cubic phase degree of crystallinity, is used for the BaTiO of Y5V porcelain
3Degree of crystallinity is used for the BaTiO of X7R porcelain more than or equal to 1
3Degree of crystallinity is more than or equal to 2; And, BaTiO
3Ba/Ti mol ratio m be preferably greater than or equal 0.994 and, perhaps BaTiO less than 1.03
3Though Ba/Ti mol ratio m not in above scope, but the A hyte was divided with the B hyte and is divided mol ratio m during its porcelain prescription was formed, be A/B, more than or equal to 0.994 and less than 1.03, wherein A hyte branch is meant at sintering and forms the component that enters the A position behind the porcelain body, and B hyte branch is meant at sintering and forms the component that enters the B position behind the porcelain body.
In addition, among the present invention, the purity of the ceramic medium material of preparation porcelain slurry should be more than or equal to 0.998; Perhaps the purity of material is more than or equal to 0.995, but K in the material
+, Na
+, Si
4+, Mg
2+, Fe
2+The equal size sum is less than or equal to 100ppm, Sr
2+, Ca
2+, K
+, Na
+, Si
4+, Mg
2+, Fe
2+The equal size sum is less than or equal to 500ppm.
In step (1), can adopt organic or the water-based adhesive system during preparation porcelain slurry.
In step (2), the porcelain slurry that step (1) makes is through after fully disperseing, add a closed container and vacuumize to remove the bubble in the porcelain slurry, the mode that vacuumizes except that bubble can adopt the mode that stirs the porcelain slurry while vacuumizing, and vacuum degree preferably is less than or equal to-0.06MPa.Pass through classified filtering at last, can on coating machine, carry out coating thickness and be that 1-5 μ m compactness is good, intensity is high, good springiness, not have the high-quality dielectric film of impurity defect.
Classified filtering in the step (2) can divide the 2-5 level to carry out, and preferably divides the 2-3 level to carry out.For example, when adopting 3 grades to filter, cross the particle that filters out more than 5 microns through the first order earlier, cross the particle that filters out more than 2 microns through the second level again, after 3rd level is crossed the particle that filters out more than 1 micron.
Preferably, the grain diameter of the ceramic medium material of porcelain slurry is controlled between the 0.1-1.0 μ m in the step (2).
The method that forms dielectric film in step (3) can be rubbing method or silk screen print method.Rubbing method can be steel band The tape casting or carrier band rubbing method, preferred PET carrier band rubbing method.Wherein, every layer of dielectric thickness can be controlled between the 1-5 μ m.
If adopt silk screen print method in the step (3), when promptly so-called wet method was come the printed medium layer, it can be divided into half wet process and full wet method again.So-called half wet process is to print medium and oven dry on the PET film, and then the mode that laminates, and promptly prints medium and oven dry on the PET film, silk-screen electrode then, silk-screen medium and electrode more afterwards, till reaching the design number of plies, the technological design electrode printing number of plies generally also is an even number.So-called full wet method promptly is that dielectric layer and electrode all adopt printing process, till reaching the technological design electrode number of plies.
Wet method is made the MLCC dielectric layer and can be adjusted very easily by adjusting the silk screen aperture at 1.5-5 μ m even on greater than the thickness of 5 μ m.Its key problem in technology point is to solve the erosion film problem between dielectric printing porcelain slurry and the electrode printing slurry, and promptly electrode is to the infiltration of dielectric layer, thereby causes that electric capacity punctures, withstand voltage reduction or the deterioration of other electrical properties.Next is the preparation and the silk screen design of dielectric printing slurry, guarantee even, the high conformity of dielectric layer densification, thickness that prints.
Method dry in step (4) and (6) can be air dry, blowing drying or bake drying.If adopt bake drying, then its temperature generally is controlled between 40-130 ℃.
The method that forms electrode layer in step (5) is generally silk screen print method, can certainly select other method.
Media electrode layer in step (7) and (8) is preferably the electrode layer with 2-20 layer; If the number of plies very little, it is still bigger to peel off difficulty, and the number of plies is too many, and it is not good equally to peel off effect.
In the process that forms the media electrode layer, every layer of medium all must print electrode, thereby printing equipment must fully guarantee the contraposition of electrode and the accuracy of dislocation.Peel off unit (comprising medium and electrode) for each, the technological design electrode printing number of plies is generally even number.
For the MLCC of the high number of plies, laminating technology also is important.Existing traditional hydrostatic pressing technology and common oil pressure laminating technology, insufficient pressure can cause layering or side to be split, the density of high number of plies electric capacity idiosome is undesirable, gas in the idiosome also is difficult to get rid of, cause the porcelain body behind the sintering fine and close inadequately, airtight air vent can be produced, thereby quality problems such as withstand voltage dispersion can be caused.Adopt hot-press arrangement in the step of the present invention (8), under the condition of heated constant temperature, the crust piece is carried out the classification lamination, so both can improve the density of idiosome and help sintering, the idiosome pore can be eliminated to greatest extent again and the layering side is split phenomenon, preferred employing minibus piece design (it is little promptly to cling to the piece size) simultaneously, its benefit are to help gas purging to eliminate pore.Preferably, the classification lamination in the step (8) is to carry out under 40-150 ℃ heated constant temperature condition, and preferred heating-up temperature is 40-115 ℃.
In general, the classification lamination in the step (8) is to carry out according to first little pressure, the back order of pressure greatly.The pressure of lamination is 0.5-6T/cm, and its size is relevant with the size of crust piece area, and crust piece area is big, needs pressure big; The lamination time was generally 2 minutes to 45 minutes, and its number on the middle and senior level, electric capacity thickness is big, size is big needs the time long.
Method of the present invention has solved the ultra-thin medium film and has peeled off difficult problem, has effectively improved the compactness of porcelain body, can guarantee the consistency of performances such as thin-medium, high number of plies MLCC capacity, withstand voltage, loss, insulation.
Embodiment
Further specify the present invention below in conjunction with embodiment, but the present invention is not limited to these execution modes; Any change of being done according to the present invention or improvement all belong to protection scope of the present invention.
Embodiment 1
Adopt the porcelain of prescription shown in the table 1.The BaTiO that contains 95-99.2wt% in these porcelain compositions
3, BaZrO3, CaZrO3 or be (Ba,, Ca) (Zr, mixture Ti) or solid solution.Wherein, (Ba,, Ca) (Zr, theoretical general formula Ti) is:
(Ba
1-xCa
x)
m(Ti
1-yZr
y)O
3+A
A is MnCO
3, MnO
2, CaCO
3, BaCO
3, Nb
2O
5, Y
2O
3, ZnO, Er
2O
3, Ho
2O
3, SiO
2, MgO, Mg (OH)
2In one or more, its percentage by weight is 0.8%～5.0%.Selected materials has following feature: granularity is thin, good sphericity, distribution are concentrated granularity D
50Be the 0.1-0.6 micron; BaTiO
3Have higher cubic phase degree of crystallinity, the BaTiO in the porcelain as main raw material(s)
3Degree of crystallinity is more than or equal to 1; BaTiO
3Ba/Ti mol ratio m more than or equal to 0.994 and less than 1.03; Perhaps BaTiO
3Though Ba/Ti mol ratio m not in above scope, but the A hyte was divided B hyte branch mol ratio m during its porcelain prescription was formed, be A/B, more than or equal to 0.994 and less than 1.03, wherein A hyte branch is meant at sintering and forms the component that enters the A position behind the porcelain body, and B hyte branch is meant at sintering and forms the component that enters the B position behind the porcelain body; The purity of material therefor is more than or equal to 0.998, and perhaps material purity is more than or equal to 0.995, but K in the material
+, Na
+, Si
4+, Mg
2+, Fe
2+The equal size sum is less than or equal to 100ppm, Sr
2+, Ca
2+, K
+, Na
+, Si
4+, Mg
2+, Fe
2+The equal size sum is less than or equal to 500ppm.
Above-mentioned porcelain can adopt organic or the water-based adhesive system; Formed porcelain slurry adds a closed container and vacuumizes to remove the bubble in the porcelain slurry through after fully disperseing, and the mode that vacuumizes except that bubble can adopt the mode that stirs the porcelain slurry while vacuumizing, and vacuum degree is less than or equal to-0.06Mpa; Pass through classified filtering (afterbody is filtered into employing less than 1 μ m filter bag or approximate filter) at last, be that 1-5 micron compactness is good, intensity is high, good springiness, do not have the high-quality dielectric film of impurity defect with coating machine coating thickness on the PET film.Oven dry then, electrode in the printing, oven dry again, curtain coating again, accumulative total reaches the media electrode layer of the 2-20 layer even the higher number of plies, and then peel off, lamination.At last, adopt a kind of hot-press arrangement, under the condition of heated constant temperature, the crust piece is carried out classification lamination (the little pressure of elder generation, big again pressure).Heating-up temperature is 40-115 ℃; The pressure of lamination is 0.5-6T/cm, and its big I is suitably adjusted according to the size of crust piece area: crust piece area is big, needs pressure big; The lamination time is controlled between 2 minutes to 45 minutes, can suitably adjust according to the medium number of plies of capacitor and the thickness of capacitor etc.
The performance of high-rise several pieces formula ceramic capacitors of thin-medium that present embodiment is prepared is then listed among the table 2.
Table 1
| Sequence number | ??x | ??y | ??m | ??MnCO 3Or MnO 2 | ??CaCO 3Or BaCO 3 | MgO or Mg (OH) 2 | ??Y 2O 3Or Er 2O 3Or Ho 2O 3 | ZnO or SiO 2 |
| ??1 | ??0.02 | ??0.2 | ??1.005 | ??0.15 | ??0 | ??0 | ??0.55 | ??0.1 |
| ??2 | ??0.05 | ??0.2 | ??1.005 | ??0.25 | ??0 | ??0 | ??0.45 | ??0.1 |
| ??3 | ??0.08 | ??0.2 | ??1.005 | ??0.15 | ??0 | ??0 | ??0.65 | ??0.2 |
| ??4 | ??0.05 | ??0.2 | ??1.000 | ??0.1 | ??0 | ??0 | ??0.8 | ??0.4 |
| ??5 | ??0.05 | ??0.2 | ??1.01 | ??0.15 | ??0.2 | ??0 | ??0.55 | ??0.2 |
| ??6 | ??0 | ??0 | ??0.998 | ??0.60 | ??0.5 | ??0.3 | ??1.2 | ??0.7 |
| ??7 | ??0 | ??0 | ??0.998 | ??0.60 | ??0.6 | ??0.3 | ??1.2 | ??0.7 |
| ??8 | ??0 | ??0 | ??0.998 | ??0.60 | ??0.8 | ??0.3 | ??1.2 | ??0.7 |
| ??9 | ??0 | ??0 | ??1.003 | ??0.60 | ??1.0 | ??0.3 | ??1.2 | ??0.9 |
| ??10 | ??0 | ??0 | ??1.003 | ??0.60 | ??1.2 | ??0.3 | ??1.2 | ??1.0 |
Embodiment 2
According to the ceramic capacitor that condition and the method for embodiment 1 prepares the high number of plies of thin-medium, unique different be method silk-screen dielectric film on the PET film with silk screen printing.
Embodiment 3
According to the ceramic capacitor that condition and the method for embodiment 1 prepares the high number of plies of thin-medium, unique different be the method that dielectric film and electrode layer all adopt silk screen printing, and do not use the PET film carrier.
Table 2
| Sequence number | Dielectric constant | Loss | Insulation | Temperature characterisitic | Dielectric thickness | The electric capacity specification |
| 1 | ??15500 | ??0.0250 | ＞5×10 9 | 2F | 5μm | 0805F106 |
| 2 | ??14750 | ??0.0320 | ＞5×10 9 | 2F | 5μm | 0805F106 |
| 3 | ??15640 | ??0.0315 | ＞5×10 9 | 2F | 5μm | 0805F106 |
| 4 | ??14800 | ??0.0235 | ＞5×10 9 | 2F | 5μm | 0805F106 |
| 5 | ??13540 | ??0.0290 | ＞5×10 9 | 2F | 5μm | 0805F106 |
| 6 | ??3545 | ??0.0150 | ＞5×10 10 | 2X | 3μm | 0805B105 |
| 7 | ??3350 | ??0.0160 | ＞5×10 10 | 2X | 3μm | 0805B105 |
| 8 | ??3620 | ??0.0180 | ＞5×10 10 | 2X | 3μm | 0805B105 |
| 9 | ??2807 | ??0.0230 | ＞5×10 10 | 2X | 2μm | 0805B105 |
| 10 | ??2965 | ??0.0220 | ＞5×10 10 | 2X | 2μm | 0805B105 |
Claims (10)
1, a kind of method for preparing high-rise several pieces formula ceramic capacitors of thin-medium, this method may further comprise the steps:
(1) ceramic medium material is made the porcelain slurry;
(2) the prepared porcelain of step (1) slurry is carried out vacuum degassing and classified filtering, make that the grain diameter of ceramic medium material is controlled between the 0.1-3.0 μ m in the porcelain slurry;
(3) form one deck dielectric film equably with resulting porcelain slurry in the step (2);
(4) resulting dielectric film in the step (3) is carried out drying;
(5) in step (4), form electrode layer on the resulting dried dielectric film;
(6) the resulting dielectric film that has electrode layer in the step (5) is carried out drying;
(7) repeat in above-mentioned steps (3)-(6) formation dielectric film, drying, form electrode layer, dry operation more again, up to the media electrode layer that forms 2-40 layer electrode layer;
(8) resulting in the strip step (7), composite type media electrode layer with 2-40 layer electrode layer carries out lamination to combination layer then, and the mode with the classification heated lamination presses solidly again;
(9) product after resulting the pressing solidly in the step (8) is cut, make unsintered chip;
(10) with in the step (9) not the sintering chip carry out sintering earlier, coat electrode slurry in its end again, perhaps coat earlier electrode slurry, carry out sintering again in its end, make high-rise several pieces formula ceramic capacitors of thin-medium.
2, the method for claim 1 is characterized in that, the classified filtering in the step (2) is that branch 2-5 level is carried out.
3, the method for claim 1 is characterized in that, the grain diameter of the ceramic medium material of porcelain slurry is controlled between the 0.1-1.0 μ m in the step (2).
4, the method for claim 1 is characterized in that, the method that forms dielectric film in the step (3) is rubbing method or silk screen print method.
5, the method for claim 1 is characterized in that, dry method is air dry, blowing drying or bake drying in step (4) and (6).
6, method as claimed in claim 5 is characterized in that, the temperature of the bake drying in step (4) and (6) is 40-130 ℃.
7, the method for claim 1 is characterized in that, the method that forms electrode layer in the step (5) is a silk screen print method.
8, the method for claim 1 is characterized in that, the media electrode layer in step (7) and (8) has the electrode layer of 2-20 layer.
9, the method for claim 1 is characterized in that, the classification lamination in the step (8) carries out under 40-150 ℃ of heated constant temperature condition, and the crust piece of lamination is a rectangle, and its size is at long 40～150mm, between wide 20～100mm.
10, the method for claim 1 is characterized in that, the classification lamination in the step (9) is to carry out according to first little pressure, the back order of pressure greatly, and pressure limit is at 0.5～6T/cm.
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|---|---|---|---|
| CNA2003101125631A CN1629991A (en) | 2003-12-16 | 2003-12-16 | Method for preparation of thin-medium chip ceramic capacitor with large number of layers |
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|---|---|---|---|
| CNA2003101125631A CN1629991A (en) | 2003-12-16 | 2003-12-16 | Method for preparation of thin-medium chip ceramic capacitor with large number of layers |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7688567B2 (en) | 2005-08-05 | 2010-03-30 | Tdk Corporation | Method of manufacturing multilayer capacitor and multilayer capacitor |
| CN101916657A (en) * | 2010-07-30 | 2010-12-15 | 广东风华高新科技股份有限公司 | High-frequency and high-Q-value chip multilayer ceramic capacitor |
| CN1909126B (en) * | 2005-08-05 | 2011-01-26 | Tdk株式会社 | Method of manufacturing multilayer capacitor and multilayer capacitor |
| CN103050278A (en) * | 2012-12-20 | 2013-04-17 | 广东风华高新科技股份有限公司 | Multilayer ceramic capacitor and preparation method thereof |
| CN111564313A (en) * | 2020-05-25 | 2020-08-21 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | Multilayer chip ceramic dielectric capacitor green body forming system and method |
| WO2021128690A1 (en) * | 2019-12-26 | 2021-07-01 | 南京汇聚新材料科技有限公司 | Capacitor having improved voltage resistance and insulation impedance resistance |
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2003
- 2003-12-16 CN CNA2003101125631A patent/CN1629991A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7688567B2 (en) | 2005-08-05 | 2010-03-30 | Tdk Corporation | Method of manufacturing multilayer capacitor and multilayer capacitor |
| US7828033B2 (en) | 2005-08-05 | 2010-11-09 | Tdk Corporation | Method of manufacturing multilayer capacitor and multilayer capacitor |
| CN1909126B (en) * | 2005-08-05 | 2011-01-26 | Tdk株式会社 | Method of manufacturing multilayer capacitor and multilayer capacitor |
| CN101916657A (en) * | 2010-07-30 | 2010-12-15 | 广东风华高新科技股份有限公司 | High-frequency and high-Q-value chip multilayer ceramic capacitor |
| CN101916657B (en) * | 2010-07-30 | 2012-07-18 | 广东风华高新科技股份有限公司 | High-frequency and high-Q-value chip multilayer ceramic capacitor |
| CN103050278A (en) * | 2012-12-20 | 2013-04-17 | 广东风华高新科技股份有限公司 | Multilayer ceramic capacitor and preparation method thereof |
| CN103050278B (en) * | 2012-12-20 | 2016-07-06 | 广东风华高新科技股份有限公司 | Multilayer ceramic capacitor and preparation method thereof |
| WO2021128690A1 (en) * | 2019-12-26 | 2021-07-01 | 南京汇聚新材料科技有限公司 | Capacitor having improved voltage resistance and insulation impedance resistance |
| CN111564313A (en) * | 2020-05-25 | 2020-08-21 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | Multilayer chip ceramic dielectric capacitor green body forming system and method |
| CN111564313B (en) * | 2020-05-25 | 2021-12-07 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | Multilayer chip ceramic dielectric capacitor green body forming system and method |
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