CN1613807A - Metal ceramic film of embedding titanium or titanium alloy - Google Patents
Metal ceramic film of embedding titanium or titanium alloy Download PDFInfo
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- CN1613807A CN1613807A CN 200410097125 CN200410097125A CN1613807A CN 1613807 A CN1613807 A CN 1613807A CN 200410097125 CN200410097125 CN 200410097125 CN 200410097125 A CN200410097125 A CN 200410097125A CN 1613807 A CN1613807 A CN 1613807A
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Abstract
A metal ceramic thin film for embedded titanium or titanium alloy metal cluster is used as selectively absorbing coating of solar energy. It consists of reflective Cu or Ti layer sputtered on matrix, Ti-TiN absorbing layer and TiN antireflective layer. Its advantages include good thermal stability and solar selective absorbing coating.
Description
Technical field
The invention belongs to the solar selectively absorbing coating technical field, nano metal group a small bundle of straw, etc. for silkworms to spin cocoons on of particularly selecting refractory metal titanium or titanium (Ti) alloy to generate is embedded in the technology of preparation novel optical film in the nitride metal ceramic.
Background technology
Nitride or oxide cermets have excellent optical property, as: TiO
2, AlN, Al
2O
3, TiN or the like has specific spectrum property separately.Picture TiO
2Film is to ultraviolet absorption, and visible light can pass through, and TiN and AlN film are fully transparent to solar spectrum.
Though nitride or oxide cermets film each have specific spectrum property,, by particular processing, adopt to mix, ion implantation, element that group's a small bundle of straw, etc. for silkworms to spin cocoons on embedding is selected or the like means, can change the optical property of metallic cermet films.The present invention has selected titanium or titanium alloy metal for use, adopts the method for sputtering technology, nanocluster embedding, and the optical property of TiN metallic cermet films is carried out modification, to reach actual application purpose.This novel film can be used as solar selectively absorbing coating.
The commercial at present solar selectively absorbing coating of producing in enormous quantities is essentially the mixture of aluminium (Al) and aluminium nitride (AlN).Metallic aluminium is distributed in the metal aluminum nitride pottery according to the ratio of setting, and prepares the multimembrane coating of selected thickness.Wherein, what be close to glass basis is copper (Cu) or aluminium (Al) reflecting layer, is the absorption layer of the mixture composition of aluminium (Al) and aluminium nitride (AlN) above, is aluminium nitride (AlN) antireflection layer at last.This combination rete has the selectivity absorptive character to 300nm to infrared spectra, has intensive to absorb in the solar radiation zone, then is full impregnated to ir radiation.This combination rete uses two targets or single target sputter stove to produce and (uses copper, two targets of aluminium when adopting the copper reflecting layer, only using during the aluminium reflecting layer, an aluminium target gets final product), an aluminium target generates aluminium nitride embedding aluminum metal group a small bundle of straw, etc. for silkworms to spin cocoons on ceramic membrane simultaneously under the insufficient condition of nitrogen, and then generate the aluminium nitride Window layer, this aluminium target or add a copper target in addition and be used for making aluminium reflecting layer or copper reflecting layer.
Except the composite coating of above-mentioned aluminium (Al) and aluminium nitride (AlN), people have also developed laminated films such as chromic oxide, chromium-nitrogen, chromium-carbon, titanium-carbon, titanium-nitrogen-carbon, zirconium-nitrogen-carbon, nickel-carbon, nickel-nitrogen, molybdenum-carbon, stainless steel-carbon for many years, wherein have severally to be used to commercially produce as the solar energy heating coating.
Above composite film all takes to utilize reacting metal to carry out the preparation principle of reactive sputtering, this class preparation method is comparatively simple, and technology is also ripe, and rete has absorptive character preferably to sun power, but rete does not all possess the thermostability under the high temperature, and use temperature is confined to about 150 ℃.
Doctor Zhang Qichu of University of Sydney, Australia in 1996 has obtained the patent of " solar energy selective absorption surface coating ", is used for the high temperature solar vacuum heat collection pipe.This patent is to adopt the sputtering method of three targets, in the presence of at least a reactant gases, target and reactant gases reaction generate sintering metal during work, the another target not with gas reaction, be used to generate the nano metal cluster, the sputter simultaneously of two targets has formed solar selectively absorbing coating; The 3rd target is used to prepare the reflecting layer.With the target aluminium or the magnesium of reactant gases reaction, another target is selected: tungsten, tungstenalloy, stainless steel, nickel, nickelalloy, nichrome, platinum, iridium, starve, ruthenium, rhodium, rhenium, molybdenum, molybdenum alloy and gold.The preparation method of the solar vacuum heat-collecting pipe of narrating in this patent and existing commodity (composite coating of aluminium and aluminium nitride) production method is similar, just needs to use three target sputter stoves.Wherein, a copper target is used for making the copper reflecting layer, and an aluminium target generates aluminium nitride, and the another metallic target generates by the non-reacting metal cluster of embedding.Many target sputter methods have been current techique, and adopting the aluminium target to prepare aluminium nitride (AlN) also is method in common.The maximum inventive point of this patent (promptly constituting the distinguishing characteristics with prior art) is a material of having selected not react target electrode, prepares by the non-reacting metal cluster of embedding with it.Performance is stable during the solar selectively absorbing coating high temperature of this method preparation, thisly choose the preparation principle that reacting metal and non-reacting metal carry out reactive sputtering and non-reactive sputtering simultaneously, for the middle high temperature solar energy selective absorption coating of preparing Heat stability is good provides a kind of new way.After this have some similar techniques that adopt this preparation principle to occur again, but this type of preparation method generally need use three target sputter stoves, production technique is comparatively complicated.
Summary of the invention
The objective of the invention is for overcoming the weak point of prior art, metallic cermet films of a kind of embedding titanium or titanium alloy metal group a small bundle of straw, etc. for silkworms to spin cocoons on and preparation method thereof is proposed, adopt comparatively simple reactive sputtering preparation method, obtain the solar selectively absorbing coating of Heat stability is good under the high temperature.
The metallic cermet films of a kind of embedding titanium that the present invention proposes or titanium alloy metal group a small bundle of straw, etc. for silkworms to spin cocoons on, it is characterized in that, by successively on matrix the copper of sputter (Cu) or titanium (Ti) reflecting layer, titanium nitride embedding titanium or titanium alloy cluster (Ti--TiN) absorption layer and titanium nitride (TiN) antireflection layer form.
The thickness of above-mentioned each rete is: the thickness in described reflecting layer is 100～500nm. The thickness of absorption layer is 30～200nm; The thickness of antireflection layer is 60～100nm.
The metallic cermet films of preparation embedding titanium or titanium (Ti) alloyed metal group a small bundle of straw, etc. for silkworms to spin cocoons on can have several different methods, as relatively more expensive metal group a small bundle of straw, etc. for silkworms to spin cocoons on embedding equipment that the ionic fluid generation device is arranged, both economical practicality be many targets of multicell magnetic control dc sputtering equipment.
Metallic cermet films of the present invention adopts the magnetically controlled sputter method preparation of single target or two target magnetic control sputtering stoves.
A titanium or titanium (Ti) alloys target only are set in single target magnetic control sputtering stove, and a copper (Cu) target (only being used to make the reflecting layer) and titanium or titanium (Ti) alloys target are set in the two target magnetic control sputtering stoves.When making the absorption layer of metallic cermet films of the present invention, working gas argon gas (Ar), reactant gases is nitrogen (N
2), having argon (Ar) the ion bombardment target material surface of certain energy, the atom of target or atomic group a small bundle of straw, etc. for silkworms to spin cocoons on are sputtered out.When reactant gases was not enough, a part of atom or atomic group a small bundle of straw, etc. for silkworms to spin cocoons on and reactant gases reaction generated cermet coating; A part can't be reacted with reactant gases, generates titanium or titanium (Ti) alloyed metal group a small bundle of straw, etc. for silkworms to spin cocoons on and is embedded among the sintering metal.Rationally control electric current, voltage and the nitrogen (N of target electrode
2) supply, the composition that the present invention is needed constantly deposits on the base material.In order to obtain needed spectrum property, every layer thickness difference, the Ti metal cluster component difference of institute's embedding adopts sputtering technology accurately to control.
Characteristics of the present invention and effect:
The applicant draws through experiment: adopt titanium nitride embedding titanium or titanium (Ti) alloyed metal cluster, make original very transparent titanium nitride (TiN) be modified as fabulous solar selectively absorbing material.(300～3000nm) through after multiple reflection, refraction, interference, the absorption, and the overwhelming majority (more than 94%) coated absorption is converted into heat, and the glass basis inside that is transmitted to vacuum heat collection pipe is utilized to the infrared light part for the visible light of solar spectrum; On the other hand, the coating after the modification becomes Hei Lanse, and grey volume emissivity drops to very low (below 5%), thereby becomes good solar selectively absorbing coating.Because the fusing point of titanium or titanium (Ti) alloy is all greater than 1570 ℃, make the Heat stability is good of composite cermet film absorption layer, reflecting layer and antireflection layer, be long-term used in to surpass under 300 ℃ the condition and can not change, therefore become adaptable solar selectively absorbing coating in middle high temperature solar vacuum heat collection pipe, its thermostability is much better than with aluminium and is the solar selectively absorbing coating of encapsulating layer and antireflection layer as reflecting material, with the aluminium nitride and can compares favourably with the solar selectively absorbing coating of the non-reacting metal cluster of embedding.
The present invention utilizes reactive sputtering method, single target or two target magnetic control sputtering technologies have been used, select titanium nitride (TiN) the metallic cermet films structure of embedding titanium or titanium (Ti) alloyed metal group a small bundle of straw, etc. for silkworms to spin cocoons on, can be in facility investment less or utilize the production that realizes high temperature solar vacuum heat collection pipe in the high quality on the equipment of original production low-temperature solar energy vacuum heat collection pipe, the cost of product is reduced, help popularizing and development of new forms of energy.
Description of drawings
Fig. 1 is the metallic cermet films diagrammatic cross-section of embedding titanium of the present invention or titanium alloy metal group a small bundle of straw, etc. for silkworms to spin cocoons on.
Fig. 2 is the employed two target sputtering equipment diagrammatic cross-sections of preparation coating of the present invention.
Fig. 3 is the employed single target sputtering equipment diagrammatic cross-section of preparation coating of the present invention.
Fig. 1---among Fig. 2, the 1st, matrix (Glass tubing or metal tube), the 2nd, copper target, the 3rd, sputter stove, the 4th, inlet pipe a (Ar), the 5th, inlet pipe b (N
2), the 6th, titanium or titanium alloy target, the 7th, reflecting layer (Cu, 50～150nm; Ti, the 100～500nm), the 8th, titanium or titanium alloy metal cluster encapsulating layer (the Ti alloy cluster is embedded among the TiN, and the 30～200nm), the 9th, antireflection layer (TiN, 60～100nm).
Embodiment
The metallic cermet films of the embedding titanium that the present invention proposes or titanium alloy metal group a small bundle of straw, etc. for silkworms to spin cocoons on reaches embodiment in conjunction with the accompanying drawings and further specifies as follows:
The metallic cermet films structure of embedding titanium of the present invention or titanium alloy metal group a small bundle of straw, etc. for silkworms to spin cocoons on comprises copper of sputter (Cu) or titanium (Ti) reflecting layer 7, titanium nitride embedding titanium alloy metal cluster (Ti--TiN) absorption layer 8 and titanium nitride (TiN) antireflection layer 9 compositions on matrix successively as shown in Figure 1.Wherein, absorption layer 8 comprises high metal content layer (two a layers) and low-metal content layer (two b layers), two-layer between natural transition.
The composition and the thickness of each rete are as shown in table 1
Table 1
| Strain | Project | The first layer | The second layer | The 3rd layer | |
| A, high metal content layer | B, low-metal content layer | ||||
| Ti-N-Ti | Composition | Ti | TiN+Ti(H) | TiN+Ti(L) | TiN |
| Thickness (nm) | 100～500 | 20～100 | 10～100 | 60～100 | |
| Cu-Ti-N-Ti | Composition | Cu | TiN+Ti(H) | TiN+Ti(L) | TiN |
| Thickness (nm) | 50～150 | 20～100 | 10～100 | 60～100 | |
The two target sputtering equipment structures that the present invention uses as shown in Figure 2,---titanium nitride embedding titanium or titanium alloy cluster (Ti--TiN) absorption layer---metallic cermet films that titanium nitride (TiN) antireflection layer is formed that adopts this equipment can prepare by copper (Cu) reflecting layer, this preparation method comprises:
Two target electrodes are set in the sputter stove 3 both sides that copper target 2 and titanium or titanium alloy target 6 are positioned at target chamber are installed respectively, ring-type is laid matrix 1 (being sample) on every side, matrix can realized self rotation when the endless track that is placed rotates, so that can constantly come in the face of target electrode 2 and 6, can also pass through in face of the target electrode 2,6 in rotation at two repeatedly again with new one side;
Make target electrode 2,6 and matrix 1 between keep different potentials, from inlet pipe a, b (4,5) feed argon gas and nitrogen, use the argon ion bombardment target material surface, atoms metal or elementide are sputtered out, can not directly deposit on the base material with the material of nitrogen reaction, generate nitride deposition to base material with the material of nitrogen reaction, the supply of control nitrogen can be controlled the growing amount of nitride, remaining then directly is embedded in the nitride by splash-proofing sputtering metal, the material total overall reaction generates nitride deposition to material when feeding excessive nitrogen, thereby finishes the making processes (processing condition among the preparation method and parameter all belong to those skilled in the art's ABC) of compound coating.
Each layer be preparation technology be respectively described below:
At first in substrate, prepare layer of metal reflecting layer 7, reflector material is a copper, the preparation of this layer is provided with the position of copper target 2 and carries out in sputtering chamber, feed argon gas from inlet pipe a4, use the argon ion bombardment target material surface, the atom of copper metal or elementide are sputtered out, and directly deposit on the base material.This moment, nitrogen tube b5 closed, and titanium or titanium alloy target 6 are not worked.
Again at metallic reflector 7 surface preparation titanium-nitride cermet thin film layers, this moment the position of titanium or titanium alloy target 6 being set in sputtering chamber carries out, feed argon gas from inlet pipe a4, use the argon ion bombardment target material surface, the atom of titanium or titanium alloy metal or elementide are sputtered out, feed nitrogen from inlet pipe b5 simultaneously, carry out the reactive sputtering that reactant gases is a nitrogen, the control nitrogen partial pressure, can on base material, generate purified titanium nitride membrane, also can generate the titanium nitride membrane of embedding titanium or titanium alloy metal cluster, the embedding amount of its metal cluster can be controlled by the supply of control nitrogen, and the thickness of film also can be by controlling sputter rate and time effectively in nano level scope inner control.Copper target 2 is not worked when making this layer.
The antireflection layer on preparation surface at last is provided with in sputtering chamber on the position of titanium or titanium alloy target 6 and carries out, adopt method same as described above can be on absorption layer refabrication one deck antireflective titanium nitride membrane 9, be transparent cermet coating fully.Copper target 2 is not worked when making this layer.
Single target sputtering equipment structure that the present invention uses as shown in Figure 3,---titanium nitride embedding titanium or titanium alloy cluster (Ti--TiN) absorption layer---metallic cermet films that titanium nitride (TiN) antireflection layer is formed that adopts this equipment can prepare by titanium (Ti) reflecting layer, this preparation method comprises:
The centre that a target electrode installation titanium or titanium alloy target 6 are positioned at target chamber is set in the sputter stove 3, ring-type is laid matrix 1 (being sample) on every side, matrix can realized self rotation when the endless track that is placed rotates, so that can constantly come in the face of target electrode 6 with new one side.Make between target electrode 6 and the matrix 1 and keep different potentials; Feed argon gas and nitrogen from inlet pipe a, b (4,5), use the argon ion bombardment target material surface, atoms metal or elementide are sputtered out, the material that is sputtered during obstructed nitrogen directly deposits on the base material, the material that reacts when leading to nitrogen generates nitride deposition to base material, the supply of control nitrogen can be controlled the growing amount of nitride, remaining then directly is embedded in the nitride by splash-proofing sputtering metal, thereby the material total overall reaction generates the making processes that nitride deposition is finished compound coating to the material when feeding excessive nitrogen.
Each layer be preparation technology be respectively described below:
At first in substrate, prepare layer of metal reflecting layer 7, reflector material is titanium or titanium alloy, the preparation of this layer is carried out in sputtering chamber, feed argon gas from inlet pipe a4, with argon ion bombardment titanium or titanium alloy target surface, the atom of titanium or titanium alloy metal or elementide are sputtered out, and directly deposit on the base material.This moment, nitrogen tube b5 closed.
Again at metallic reflector 7 surface preparation titanium-nitride cermet thin film layers, carry out at sputtering chamber equally, feed argon gas from inlet pipe a4, use the argon ion bombardment target material surface, the atom of titanium or titanium alloy metal or elementide are sputtered out, feed nitrogen from inlet pipe b5 simultaneously, carry out the reactive sputtering that reactant gases is a nitrogen, the control nitrogen partial pressure, can on base material, generate purified titanium nitride membrane, also can generate the titanium nitride membrane of embedding titanium or titanium alloy metal cluster, the embedding amount of its metal cluster can be controlled by the supply of control nitrogen, and the thickness of film also can be by controlling sputter rate and time effectively in nano level scope inner control.
The antireflection layer on preparation surface at last, in sputtering chamber, adopt method same as described above can be on absorption layer refabrication one deck antireflective titanium nitride membrane 9, be transparent sintering metal fully.
Above-mentioned preparation method's operating parameters is as shown in table 2:
Table 2
| Strain | The number of plies | Target | Parameter | ||||
| Electric current (A) | Voltage (V) | Ar Pressure (Pa) | Nitrogen amount (ml/s) | Time (min) | |||
| Ti-N-Ti | One | ?Ti | ?30～50 | ?300～370 | ?1～5×10 -1 | 0 | ?8～12 |
| Two a | ?Ti | ?30～50 | ?300～400 | ?3～8×10 -1 | 10～50 | ?7～10 | |
| Two b | ?Ti | ?30～50 | ?300～380 | ?3～8×10 -1 | 20～80 | ?7～10 | |
| Three | ?Ti | ?30～50 | ?300～430 | ?3～8×10 -1 | 100～150 | ?15～20 | |
| Cu-Ti-N- Ti | One | ?Cu | ?20～30 | ?500～580 | ?1～5×10 -1 | 0 | ?6～8 |
| Two a | ?Ti | ?30～50 | ?300～400 | ?3～8×10 -1 | 10～50 | ?7～10 | |
| Two b | ?Ti | ?30～50 | ?300～380 | ?3～8×10 -1 | 20～80 | ?7～10 | |
| Three | ?Ti | ?30～50 | ?300～430 | ?3～8×10 -1 | 100～150 | ?10～20 | |
Embodiment 1:
On single target sputter stove, make in the Ti-N-Ti strain high temperature solar energy selective absorption coating among the high temperature solar vacuum heat collection pipe.The target electrode material is a titanium alloy, and the working parameter of employing is:
| Strain | The number of plies | Target | Parameter | |||||
| Electric current I (A) | Voltage V (V) | Ar Pressure A (Pa) | Nitrogen amount N (ml/s) | Time t (min) | Thickness (nm) | |||
| Ti-N- | One | Ti | 35 | 340 | 1.1×10 -1 | 0 | 8 | 100 |
| Two a | Ti | 40 | 380 | 3.5×10 -1 | 45 | 8 | 70 | |
| Two b | Ti | 40 | 350 | 3.5×10 -1 | 45 | 7 | 35 | |
| Three | Ti | 35 | 325 | 3.5×10 -1 | 80 | 10 | 60 | |
The first layer is the Ti reflecting layer, and the 2nd a layer is high metal content TiN pottery absorption layer, and the 2nd b layer is a low-metal content TiN pottery absorption layer, and the 3rd layer is the TiN antireflection layer.
After measured, the coating that obtains is 90% to spectrographic specific absorption between wavelength 300～3000nm, and emittance is 8%, heat loss coefficient 0.6.
Embodiment 2:
On single target sputter stove, make in the Ti-N-Ti strain high temperature solar energy selective absorption coating among the high temperature solar vacuum heat collection pipe.The target electrode material is a titanium alloy, and the working parameter of employing is:
| Strain | The number of plies | Target | Parameter | |||||
| Electric current I (A) | Voltage V (V) | Ar Pressure A (Pa) | Nitrogen amount N (ml/s) | Time t (min) | Thickness (nm) | |||
| Ti-N- Ti | One | ?Ti | ?33 | ?350 | ?1.5×10 -1 | 0 | ?9 | ?400 |
| Two a | ?Ti | ?39 | ?390 | ?5×10 -1 | 40 | ?7 | ?90 | |
| Two b | ?Ti | ?40 | ?350 | ?5×10 -1 | 45 | ?7 | ?40 | |
| Three | ?Ti | ?40 | ?330 | ?5×10 -1 | 70 | ?12 | ?95 | |
The first layer is the Ti reflecting layer, and the 2nd a layer is high metal content TiN pottery absorption layer, and the 2nd b layer is a low-metal content TiN pottery absorption layer, and the 3rd layer is the TiN antireflection layer.
After measured, the coating that obtains is 91% to spectrographic specific absorption between wavelength 300～3000nm, and emittance is 7%, heat loss coefficient 0.55.
Embodiment 3:
On the dual-target sputtering stove, make in the Cu-Ti-N-Ti strain high temperature solar energy selective absorption coating among the high temperature solar vacuum heat collection pipe.Reflecting layer target electrode material is a copper, and working target electrode material is a titanium alloy, and the working parameter of employing is:
| Strain | The number of plies | Target | Parameter | |||||
| Electric current I (A) | Voltage V (V) | Ar Pressure A (Pa) | Nitrogen amount N (ml/s) | Time t (min) | Thickness (nm) | |||
| Ti-N- Ti | One | Cu | 25 | ?500 | ?2×10 -1 | 0 | ?6 | ?60 |
| Two a | Ti | 40 | ?350 | ?6×10 -1 | 40 | ?9 | ?78 | |
| Two b | ?Ti | ?40 | ?330 | ?6×10 -1 | 45 | ?7 | ?40 | |
| Three | ?Ti | ?40 | ?315 | ?5×10 -1 | 70 | ?15 | ?80 |
The first layer is the Ti reflecting layer, and the 2nd a layer is high metal content TiN pottery absorption layer, and the 2nd b layer is a low-metal content TiN pottery absorption layer, and the 3rd layer is the TiN antireflection layer.
After measured, the coating that obtains is 92% to spectrographic specific absorption between wavelength 300～3000nm, and emittance is 7%, heat loss coefficient 0.45.
In the foregoing description gained among the high temperature solar vacuum heat collection pipe high temperature solar energy selective absorption coating technical parameter all meet GB regulation.
Claims (2)
1, the metallic cermet films of a kind of embedding titanium or titanium alloy metal group a small bundle of straw, etc. for silkworms to spin cocoons on, it is characterized in that, by successively on matrix the copper of sputter (Cu) or titanium (Ti) reflecting layer, titanium nitride embedding titanium or titanium alloy metal cluster (Ti-TiN) absorption layer and titanium nitride (TiN) antireflection layer form.
2, metallic cermet films as claimed in claim 1 is characterized in that, the thickness of described each rete is: the thickness in described reflecting layer is 100～500nm. The thickness of absorption layer is 30～200nm; The thickness of antireflection layer is 60～100nm.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101182132B (en) * | 2007-11-27 | 2010-12-15 | 日出东方太阳能股份有限公司 | Low-temperature solar energy selective absorption coating and preparation method thereof |
| CN102278833A (en) * | 2011-05-16 | 2011-12-14 | 山东桑乐光热设备有限公司 | High-temperature resistant selective absorption coating and manufacturing method thereof |
| CN101854131B (en) * | 2009-04-01 | 2012-10-03 | 中国科学院金属研究所 | High-temperature-resistant selective solar energy-absorbing film and preparation method thereof |
| CN103029374A (en) * | 2011-09-30 | 2013-04-10 | 中国科学院大连化学物理研究所 | Medium-high temperature solar photothermal selective absorbing coating |
| US8893711B2 (en) | 2007-10-18 | 2014-11-25 | Alliance For Sustainable Energy, Llc | High temperature solar selective coatings |
-
2004
- 2004-12-10 CN CN 200410097125 patent/CN1613807A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8893711B2 (en) | 2007-10-18 | 2014-11-25 | Alliance For Sustainable Energy, Llc | High temperature solar selective coatings |
| CN101182132B (en) * | 2007-11-27 | 2010-12-15 | 日出东方太阳能股份有限公司 | Low-temperature solar energy selective absorption coating and preparation method thereof |
| CN101854131B (en) * | 2009-04-01 | 2012-10-03 | 中国科学院金属研究所 | High-temperature-resistant selective solar energy-absorbing film and preparation method thereof |
| CN102278833A (en) * | 2011-05-16 | 2011-12-14 | 山东桑乐光热设备有限公司 | High-temperature resistant selective absorption coating and manufacturing method thereof |
| CN103029374A (en) * | 2011-09-30 | 2013-04-10 | 中国科学院大连化学物理研究所 | Medium-high temperature solar photothermal selective absorbing coating |
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