CN1613130A - Uniformity control for plasma doping systems - Google Patents
Uniformity control for plasma doping systems Download PDFInfo
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- CN1613130A CN1613130A CNA028266730A CN02826673A CN1613130A CN 1613130 A CN1613130 A CN 1613130A CN A028266730 A CNA028266730 A CN A028266730A CN 02826673 A CN02826673 A CN 02826673A CN 1613130 A CN1613130 A CN 1613130A
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- 238000000034 method Methods 0.000 claims abstract description 29
- 238000009826 distribution Methods 0.000 claims abstract description 28
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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Abstract
Methods and apparatus are provided for controlling the dose uniformity of ions implanted into a workpiece in a plasma doping system. The plasma doping system includes a plasma doping chamber containing a platen for supporting a workpiece and an anode spaced from the platen. Dose uniformity may be improved by rotating the wafer to average azimuthal variations. Magnetic elements may be positioned around the plasma discharge region to control the radial density distribution of the plasma. The anode may have a spacing from the workpiece that varies over the area of the anode. The anode may include anode elements that are individually adjustable.
Description
Technical field of the present invention
The present invention relates to inject the plasma that uses and mix up system, more particularly, relate to the method and apparatus that mixes up the dose uniformity that is used for controlling the ion that injects workpiece in the system at plasma for the ion of workpiece.
Prior art of the present invention
It is to be used for and will to change the standard technique of the impurity introducing semiconductor wafer of conductance that ion injects.In traditional beam line ion injected system, the ionization in ion source of required impurity material, ion is accelerated the ion beam with the formation predetermined energy, and ion beam points to wafer surface.Energetic ion in the ion beam thrusts the body of semi-conducting material and imbeds the lattice of semi-conducting material, forms the satisfactory zone of conductance.
Well-known trend trends towards the higher device of less speed in semi-conductor industry.Specifically, the lateral dimension of feature and degree of depth both reduce gradually in the semiconductor device.The highest semiconductor device of technical merit requires junction depth less than 1,000 dust and may finally to require junction depth be about 200 dusts or littler.The injection degree of depth of dopant material is to be determined by the energy of ions of injecting semiconductor wafer at least partially.The beam line ion implanter is normally for effectively operation and design under than higher injection energy, neededly may not move effectively under low-yield and inject at shallow junction.
The plasma that is used in semiconductor wafer forming shallow junction mixes up system and is studied.Mix up in the system at plasma, semiconductor wafer is placed in being arranged on the platen of conduction that plasma mixes up the chamber as negative electrode.The ionogenic processing gas that comprises needed dopant material is introduced into the cabin, and potential pulse is added between platen and anode or the cabin wall, causes near the plasma that is formed with plasma sheath wafer.Applying pulse causes that the ion in the plasma passes through plasma sheath and injects wafer.It is relevant with the voltage that is added between wafer and the anode to inject the degree of depth.Low-down injection energy can be realized.For example, it is the United States Patent (USP) the 5th that licenses to Sheng on October 11st, 1994 that plasma mixes up system, 354, licensed to people's such as Liebert United States Patent (USP) the 6th on February 1st, No. 381 1,020, license on No. 592 and February 6 calendar year 2001 and describe in people's such as Goeckner No. the 6th, 182,604, the United States Patent (USP).
Mix up in the system at above-mentioned plasma, the potential pulse that adds produces plasma and the cation from plasma is quickened to wafer.In the plasma system of other type that is called as the plasma immersion system, continuous radio-frequency voltage is added between platen and the anode, therefore produces continuous plasma.Every now and then potential pulse is added between platen and the anode, thereby the cation in the plasma is quickened to wafer.
Be placed in about the cumulative ion dose of injecting wafer with across the strict demand of the space dose uniformity of wafer surface and relate on the semiconductor fabrication process that ion injects.The electric charge activity of implantation dosage decision injection zone, and dose uniformity is to guarantee to determine all have operating characteristic in the prescribed limit scope at the whole devices on the semiconductor wafer.
Mix up in the system at plasma, the plasma that produces ion is positioned at the surface of wafer.The space dose uniformity depends on the uniformity of plasma and near the electric field the wafer.Yet plasma has the inhomogeneities in space and may change along with the time.Such plasma inhomogeneities might produce the dosage inhomogeneities in the wafer of processing.Utilization separates biased concentric structure and surrounds platen and improve the inhomogeneity plasma of dosage and mix up system and license on January 27th, 1998 in people's such as Chapek No. the 5th, 711,812, the United States Patent (USP) to disclose.No matter the improvement that this approach produces, mix up at plasma that dose uniformity remains a problem in the system.
Therefore, existence mixes up system to improved plasma and is used for the technology requirement that plasma mixes up the uniformity control of system.
General introduction of the present invention
According to a first aspect of the present invention, plasma mix up device comprise plasma mix up the chamber, plasma mix up be used in the chamber supporting workpiece platen, plasma mixes up in the chamber and platen separates anode, and plasma mix up the chamber coupling the processing gas source, be used for pulse being added in the clock between platen and the anode and be used for the mechanism of rotational workpieces.The plasma that comprises the ion of process gas is to produce in the plasma discharge between anode and platen.The pulse that is added between platen and the anode makes the ion from plasma quicken towards workpiece.The rotation of workpiece improves the orientation dose uniformity.
In one embodiment, workpiece comprises semiconductor wafer, and described mechanism rotates platen like this, so that wafer is round its center rotation.Preferably, clock has the pulse repetition frequency more much higher than the rotary speed of workpiece.
According to another aspect of the present invention, plasma mixes up device and comprises comprising and be used for the plasma of platen of supporting workpiece and mix up the chamber, be used for mixing up at plasma and produce plasma in the chamber and make ion from plasma towards plasma source that workpiece quickens and the driving mechanism that is used for rotational workpieces.
According to a third aspect of the present invention, be used for method that plasma mixes up comprise the steps: workpiece be supported on plasma mix up the chamber platen, produce plasma and the ion from plasma quickened towards workpiece, and rotational workpieces.
According to a fourth aspect of the present invention, plasma mix up device comprise plasma mix up the chamber, be used for plasma mix up supporting workpiece in the chamber platen, plasma mixes up in the chamber and platen separates anode, and plasma mix up the processing gas source of chamber coupling and be used for pulse is added in clock between platen and the anode.The plasma that comprises the ion of process gas is to produce in the plasma discharge between anode and platen.The pulse that is added between platen and the anode makes the ion from plasma quicken towards workpiece.Interval between anode and the platen changes in anode region.
In one embodiment, anode comprises two above anode components, annular anode elements for example, and the interval between they and the platen can be adjusted individually.In order to produce the dose uniformity of expection in workpiece, anode can comprise two above anode components and be used for adjusting individually the actuator at the interval between each anode component and the platen.
According to a fifth aspect of the present invention, be used for the platen that method that plasma mixes up comprises the steps: workpiece support is mixed up at plasma the chamber; Mix up in the chamber according to the platen spaced relationship anode being placed on plasma, anode has two above anode components; Adjust the interval between one or more anode components and the platen; Between anode and platen, produce plasma and the ion from plasma is quickened towards workpiece.
According to a sixth aspect of the present invention, plasma mix up device comprise plasma mix up the chamber, be used for plasma mix up supporting workpiece in the chamber platen, plasma mixes up in the chamber and platen separates anode, and plasma mix up the chamber coupling the processing gas source, be used for pulse being added in the clock between platen and the anode and be arranged in numerous magnetic elements around the plasma discharge.The plasma that comprises the ion of process gas produces in plasma discharge.The pulse that is added between platen and the anode makes the ion from plasma quicken towards workpiece.Magnetic element disposes in order to control the radial density distribution of plasma in plasma discharge, and the dose uniformity of the ion of workpiece is injected in control whereby.
In one embodiment, magnetic element be arranged on the anode or near.In another embodiment, magnetic element has the cylindrical arrangement around plasma discharge.In further embodiment, device comprises the coreless armature that surrounds plasma discharge, and magnetic element is arranged on the coreless armature or near.Preferably, the polar surface article on plasma body region of discharge of magnetic element to replace.
According to a seventh aspect of the present invention, be used for method that plasma mixes up comprise the steps: workpiece support plasma mix up the chamber platen, mix up the radial density distribution that produces plasma in the chamber and make the ion from plasma quicken and rely on magnetic control plasma at plasma towards workpiece, the dose uniformity of the ion of workpiece is injected in control whereby.
Brief Description Of Drawings
In order to understand the present invention better, with reference at this by quoting the accompanying drawing that is merged in as proof,
Wherein:
Fig. 1 is the schematic block diagram that the plasma of simplification mixes up system;
Fig. 2 is the signal partial sectional view that the plasma that illustrates one embodiment of the invention mixes up system;
Fig. 3 is that plasma mixes up the vertical view cutaway drawing of system along the 3-3 line intercepting of Fig. 2;
Fig. 4 is that plasma mixes up the vertical view cutaway drawing of system along the 4-4 line intercepting of Fig. 2;
Fig. 5 A illustrates magnetic element to be arranged on the anode or near the plasma of first embodiment mixes up the signal partial sectional view of system;
Fig. 5 B is the partial top view of the embodiment of Fig. 5 A displaying;
Fig. 6 illustrates magnetic element to be arranged on the anode or near the plasma of second embodiment mixes up the signal partial sectional view of system;
Fig. 7 illustrates the curve chart of the magnetic field in plasma discharge of magnetic field radial distribution example with radius change.
Detailed description of the present invention
The example that suitable realization plasma of the present invention mixes up system schematically is illustrated among Fig. 1.Plasma mixes up chamber 10 and limits closed volume 12.The platen 14 that is positioned at 10 the insides, cabin provides support the surface of the workpiece of semiconductor wafer 20 and so on.For example, the edge week of wafer 20 can be clipped on the flat surfaces of platen 14.In one embodiment, platen has and is used for the surface of conduction of supporting wafers 20.In another embodiment, platen comprises the conductive pin (not shown) that is used for connecting wafer 20.
Anode 24 is by being placed on 10 the insides, cabin with platen 14 spaced relationship.Anode 24 can be according to moving perpendicular to platen 14 with arrow 26 indicated directions.Anode is received on the locular wall of conduction in cabin 10 usually, and two locular walls can ground connection.In another embodiment, as what describe below, platen 14 ground connection, and anode 24 connects pulse.
Wafer 20 (via platen 14) and anode 24 received on the high voltage pulse source 30, so wafer 20 works as negative electrode.Clock 30 provide usually amplitude in about 100 to 5000 volt range, about 1 to 50 microsecond of duration, pulse repetition frequency be approximately 100 hertz to 2,000 hertz pulse.People will understand these pulse parameter values and only provide as an example, can utilize other numerical value within the scope of the invention.
The closed volume 12 in cabin 10 is by controllable valve 32 and vacuum pump 34 couplings.Handle gas source 36 by mass flow controller 38 and cabin 10 couplings.The pressure sensor 44 that is positioned at 10 the insides, cabin offers controller 46 to the signal of indication cabin pressure.Controller 46 compares the pressure input of the cabin pressure of perception and expection and control signal is offered valve 32.The such by-pass valve control 32 of control signal is so that the difference of cabin pressure and expecting pressure reduces to minimum.Vacuum pump 34, valve 32, pressure sensor 44 and controller 46 constitute the closed loop pressure control system.Pressure is controlled in about 1 millitorr usually in the scope of about 500 millitorrs, but is not limited to this scope.Handle gas source 36 supplies and comprise the ionogenic gas that needs inject the dopant of workpiece.The example of ionogenic gas comprises BF
3, N2
3, Ar, PH
3, AsH
3And B
2H
6Mass flow controller 38 is regulated the speed of giving cabin 10 supply gas.Fig. 1 shows is configured to constant gas flow rate and constant compression force provides continuous flow of process gases.Pressure and gas flow rate preferably are adjusted to provides repeatably result.
Plasma mixes up system can comprise the hollow cathode 54 that is connected with hollow cathode pulse source 56.In one embodiment, hollow cathode 54 comprises the hollow cylinder of the conduction of surrounding the space between anode 24 and the platen 14.Hollow cathode can be used in the application that needs low-down ion energy.Specifically, hollow cathode pulse source 56 provides the pulse voltage that is enough to the 12 the insides formation plasma in the cabin, and clock 30 is set up the injecting voltage of expection.About the subsidiary details of the purposes of hollow cathode is to provide in No. the 6th, 182,604, the United States Patent (USP) that is merged in is quoted in above-mentioned passing through as proof.
One or more Faraday cups are used for measuring the ion dose that injects wafer 20 near can being placed in and adjoining platen 14.In the embodiment of Fig. 1, Faraday cup 50,52 etc. are around uniformly-spaced arranging in the edge week of wafer 20.Each Faraday cup includes the closure in the face of the conduction of the inlet 60 of plasma 40.Each Faraday cup is preferably as placing and tackle the cation sample that quickens to platen 14 from plasma 40 near wafer 20 in the practice.In another embodiment, annular Faraday cup 56 (see figure 2)s are placed around wafer 20 and platen 14.
Faraday cup is electrically connected to dose processor 70 or other dosage monitoring circuit.By enter the mouth 60 cations that enter each Faraday cup with circuit that Faraday cup is connected in produce the electric current of representing ionic current.Dose processor 70 can be handled electric current to determine ion dose.
As described in No. the 5th, 711,812, above-mentioned United States Patent (USP), plasma mixes up system can comprise the guard ring 66 that surrounds platen 14.Guard ring 66 can add bias voltage, to improve the uniformity of the ion distribution of injecting near the edge of wafer 20.Faraday cup 50,52 can be placed within the guard ring 66 the edge week near wafer 20 and platen 14.
Be in operation, wafer 28 is placed on the platen 14.Control pressurer system, mass flow controller 38 and processing gas source 36 produce pressure and the gas flow rate that needs in cabin 10.As an example, BF can be used in cabin 10 under the pressure of 10 millitorrs
3Gas-operated.Clock 30 is added to a series of high voltage pulses on the wafer 20, thereby causes and form plasma 40 in the plasma discharge 44 between wafer 20 and anode 24.As prior art, plasma 40 comprises the cation from the ionizable gas of handling gas source 36.Plasma 40 is included near the plasma sheath of wafer 20 (usually in wafer surface).Make and cross plasma sheath 42 from the cation of plasma 40 and quicken being present in electric field between anode 24 and the platen 14 during the high voltage pulse to platen 14.The ion that is accelerated injects wafer 20, forms regions of impurity material.Pulse voltage be for the degree of depth that cation is injected into expection in wafer 20 selected.The quantity of pulse and pulse duration are for providing the projected dose of impurity material selected in wafer 20.The electric current of each pulse is the function of any location variable of pulse voltage, gas pressure, species and electrode.For example, can adjust the interval of negative electrode at different voltage to anode.
Depend on the uniformity of plasma 40 and near the electric field the wafer 20 in wafer 20 lip-deep ion dose uniformities.Yet plasma 40 has the inhomogeneities in space and may change in time.Therefore, mix up at plasma and need the dose uniformity control technology in the system.
Embodiment of the present invention are described with reference to Fig. 2-4,5A, 5B, 6 and 7, and wherein same will have identical reference number.The partial sectional view that plasma mixes up the embodiment of system is illustrated among Fig. 2.May mix up in the system with plasma previously described the sort of type or what its plasma in office mixes up in the system and is utilized shown in Figure 1 in the feature of Fig. 2-6 illustrated.In order to improve the ion dose uniformity, these features can be used separately or use in any combination.
As shown in Figure 2, plasma mixes up system and can comprise and be used for during plasma mixes up the driving mechanism 100 of rotation wafer 20.Driving mechanism 100 can comprise CD-ROM drive motor 112 and be connected on platen 14 and CD-ROM drive motor 112 between the axle 110.Preferably, CD-ROM drive motor 112 is positioned at 10 outsides, cabin.During plasma mixed up, CD-ROM drive motor 112 was by excitation, thereby platform 14 and wafer 20 are rotated in the plane of wafer 20.Preferably, pivot be or near the center of wafer 20.Wafer 20 is preferably rotated with the speed in about 10 to 600 rev/mins of scopes.In one embodiment, wafer 20 is with the speed rotation of several commentaries on classics of per second.The rotary speed of wafer 20 is preferably selected like this, so that the pulse repetition frequency of clock 30 is more much higher than rotary speed.In addition, the rotation of wafer 20 should be not synchronous with the operation of clock 30.By rotation wafer 20 during mixing up at plasma, azimuthal uniformity variation by average, improves dose uniformity whereby on wafer surface.
According to another feature of the present invention, plasma mixes up system can have the magnetic element of arranging around plasma discharge, so as the control plasma in plasma discharge 44 radial density distribution and improve the dose uniformity of the ion that injects wafer 20 whereby.The cross sectional view show of anode 150 is in Fig. 5 A, and the vertical view of anode 150 is illustrated among Fig. 5 B.Anode 150 can be corresponding to the above-mentioned anode of showing in Fig. 1 24.Magnetic element 160,162,164 etc. is installed in anode 150 facing on the surface of plasma discharge 152.Magnetic element 160,162,164 etc. can be the permanent magnet of installing like this, so that the magnetic pole strength that replaces is to region of discharge 152.In the embodiment of Fig. 5 A and 5B, magnetic element 160,162,164 etc. is arranged in a series of concentric annular distances 170,172 and 174.This magnetic field that is configured near the region generating radial variations the anode 150, this magnetic field changes the radial density distribution of plasma and improve dose uniformity in relatively broader process parameters range.Such technological parameter can comprise gas pressure, gaseous species, wafer bias and the anode interval to negative electrode.
There is second embodiment of the anode of the magnetic element that is used for controlling the radial density distribution of plasma in plasma discharge to be illustrated in Fig. 6.Magnetic element 180,182,184 etc. is installed on the anode 190.In the embodiment depicted in fig. 6, magnetic element 180,182,184 etc. be lengthening and become the spoke-like configuration by arranged radially.Magnetic elements 180,182,184 etc. produce the magnetic field of radial variations, and this magnetic field changes the radial density distribution of plasma and improves the dose uniformity of the ion that injects wafer 20.
People will understand that multiple magnetic element configurations can be utilized and Fig. 5 A, 5B and 6 embodiments of showing only provide as an example.Magnetic element is used to control the radial density distribution of plasma in plasma discharge.The purpose of the radial density distribution of control plasma is to improve the dose uniformity of the ion that injects wafer 20.Magnetic field is to adjoin the part that needs in the plasma discharge to improve plasma density to provide.With reference to Fig. 7, magnetic field is demonstrated out with the example of the curve chart of radius change in plasma discharge.In illustrational example, magnetic field is more intense at the periphery of plasma discharge, and more weak near the center, is increased in the plasma density in the periphery of plasma discharge whereby.Distribution of Magnetic Field shown in Figure 7 is corresponding with Fig. 5 A, 5B and 6 configurations of showing usually, and magnetic element is that the periphery that adjoins plasma discharge provides there.People will understand within the scope of the invention can utilize various Distribution of Magnetic Field.For example, under near the situation of the plasma density the needs raising center, magnetic field can be more intense near the center of plasma discharge, and can be more weak at periphery.
Various magnetic element configurations can be used to provide the radial density distribution of the expection of plasma in plasma discharge.Describe in conjunction with Fig. 5 A and 5B as the front, the annular distance of magnetic element can be utilized.In conjunction with as described in Fig. 6, radial oriented magnetic element can be utilized as the front.The intensity of magnetic element can be identical or different, depends on the radial magnetic field profile of expection.In addition, can select the position of magnetic element, so that the radial magnetic field profile of expection to be provided.In addition, for the radial magnetic field profile of expection is provided, can select magnetic element radially and between azimuth size and the magnetic element radially and azimuthal separation.Magnetic element preferably is created in the magnetic field in about 20-5000 Gauss scope.In one embodiment, magnetic element produces about 500 Gausses' magnetic field.
In the embodiment of Fig. 5 A, 5B and 6, magnetic element is placed on the surface of anode opposite plasma discharge.Yet in order to control the radial density distribution of plasma, magnetic element can have the position of any expection around plasma discharge.
In with illustrational another embodiment of Fig. 2-4, magnetic element 120,122,124,126,128 etc. is spaced round region of discharge 44.Magnetic element 120,122,124,126,128 etc. because mixing up system, the plasma of Fig. 2-4 have columnar geometry, so can roundedly be arranged.In the embodiment of Fig. 2-4, magnetic element 120,122,124,126,128 etc. comprises the permanent magnet that is fixed on the hollow cathode 54 and the lengthening of magnetic pole strength article on plasma body region of discharge 44 is alternately arranged.Production cusp magnetic fields 130 in the annular regions outside wafer 20 radiuses such as magnetic element 120,122,124,126,128.Magnetic element can have the length of crossing over plasma discharge 44.In order to produce the cusp magnetic fields 130 of control plasma radial density distribution in plasma discharge 44, can select the intensity of the number and the magnet of magnetic element.
Preferably, cusp magnetic fields 130 is arranged in around the annular region of plasma discharge 44 and does not extend to region of discharge 44 in fact.Cusp magnetic fields 130 usefulness the plasmas of the control radial density distribution of plasma between anode 100 and wafer 20 fill the overlapping edge uniformity that guarantees of part the edge of wafer 20.Therefore, the spatial distribution of plasma is controlled, and radially dose uniformity improves in the plasma process parameters scope of broadness.
According to further aspect of the present invention, anode can have the interval to negative electrode that changes in the anode region scope.Anode can have fixing structure, but preferably has adjustable anode component more than two, to adapt to different operating conditions and different application.For the plasma characteristics realizing expecting and the dose uniformity of expection, can adjust the interval between anode component and the negative electrode.
In the embodiment of Fig. 2-4, anode 100 is to constitute with the form of anode component with the annular distance 180,182,184 that can vertically adjust etc.For provide can with to the anode-cathode of the radius change of center wafer at interval, can adjust annular distance 180,182,184 etc.This has along the effect that radially changes plasma density.Annular distances 180,182,184 etc. can be adjusted by rule of thumb or can use the implantation homogeneity measurement result at scene to adjust according to the wafer uniformity of actual measurement, so that reduce radially the implantation dosage variation.Annular distance 180,182,184 can be adjusted individually.Adjustment can be artificial, perhaps annular distance 180,182,184 etc. is received respectively in the actuator 190,192,194 that can control separately.
In other embodiment, anode can be to dispose as the grid of the anode component that can control separately or with the anode component of each the composition arbitrary shape that can both control separately.In each case, the interval between anode and the wafer can both change in the anode region scope, thereby realizes the dose uniformity of expection.In another embodiment, anode has the fixed structure that allows the interval variation between anode and the wafer in the anode region scope.This structure is less preferred, may mix up parameter (for example ionic species, processing gas pressure etc.) change because of different plasmas because plasma space is distributed with.
Above-mentioned be used for improving plasma and mix up inhomogeneity feature (comprise the rotation wafer, use magnetic element control plasma space to distribute and use the anode that in the anode region scope, changes apart from the interval of wafer) and can be used alone in order to improve plasma to mix up uniformity or be used in combination by any.
Can utilize other plasma to mix up architecture within the scope of the invention.For example, plasma can be pulsation or continuous.Plasma can be to produce with direct voltage, radio-frequency voltage or microwave voltage, and each can be pulsation or continuous.Can utilize different processing gas pressures.
It should be understood that the various variation of the embodiment of in this part specification, describing and show with accompanying drawing and revise and to finish within the spirit and scope of the present invention.Therefore, we to tend to being included in the description of front and being construed to the full content that accompanying drawing is showed be illustrative and not restrictive.The present invention only be subjected to claims and etc. the content constraints that defines in the value document.
Claims (33)
1. a plasma mixes up device, comprising:
Plasma mixes up the chamber;
Platen is arranged in described plasma and mixes up the chamber and be used for supporting workpiece;
Anode mixes up in the chamber at described plasma and to separate with described platen;
Handle gas source, mix up the chamber coupling with described plasma, the plasma that wherein comprises the ion of handling gas is to produce in the plasma discharge between described anode and described platen;
Clock is used for applying pulse the ion from plasma is quickened towards workpiece between described platen and described anode; And
Be used for the mechanism of rotational workpieces.
2. the plasma according to claim 1 mixes up device, and wherein said platen disposes for supporting semiconductor wafers, and described mechanism is for center rotation and the configuration round it of so described platen of rotation so that semiconductor wafer.
3. the plasma according to claim 1 mixes up device, and wherein said clock has the pulse repetition frequency more much higher than the rotary speed of workpiece.
4. the plasma according to claim 1 mixes up device, and wherein said mechanism is in order to dispose with the speed rotational workpieces in about 10 to 600 rev/mins scope.
5. a plasma mixes up device, comprising:
Plasma mixes up the chamber, comprises being used for the platen of supporting workpiece;
Plasma source is used for mixing up in the chamber at plasma producing plasma and being used for making the ion from plasma to quicken towards workpiece; And
Be used for the driving mechanism of rotational workpieces.
6. one kind is used for the method that plasma mixes up, and this method comprises the steps:
Mix up in the chamber workpiece support on platen at plasma;
Produce plasma and the ion from plasma is quickened towards workpiece; And
Rotational workpieces.
7. according to the method for claim 6, wherein workpiece comprises semiconductor wafer, and the step of rotational workpieces comprises such rotation platen, so that semiconductor wafer is round its center rotation.
8. according to the method for claim 6, further be included in plasma and mix up in the chamber pulse that pulse repetition frequency is arranged is added in step between platen and the anode, wherein pulse repetition frequency is more much higher than the speed of rotation of workpiece.
9. according to the method for claim 6, wherein workpiece rotates with the speed in about 10 to 600 rev/mins of scopes.
10. a plasma mixes up device, comprising:
Plasma mixes up the chamber;
Platen mixes up to be used for supporting workpiece in the chamber at described plasma;
Anode mixes up in the chamber at described plasma and to separate the wherein variation in the zone of described anode of the interval from described platen to described anode with described platen;
Handle gas source, mix up the chamber coupling with described plasma, the plasma that wherein comprises the ion of handling gas is to produce in the plasma discharge between described anode and described platen; And
Clock is used for pulse is added between described platen and the described anode ion from plasma is quickened towards workpiece.
11. the plasma according to claim 10 mixes up device, wherein said anode comprises two above anode components and is used for adjusting individually the interval between each anode component and the platen so that produce the actuator of the dose uniformity of expection in workpiece.
12. the plasma according to claim 11 mixes up device, wherein said two above anode components comprise annular distance.
13. the plasma according to claim 10 mixes up device, wherein workpiece comprises semiconductor wafer, and the function that the interval between described anode and the described platen can be used as radius is adjusted with respect to the center of semiconductor wafer.
14. a plasma mixes up device, comprising:
Plasma mixes up the chamber, comprises being used for the platen of supporting workpiece;
Anode mixes up in the chamber at described plasma and to separate with described platen, and described anode comprises two above anode components and is used for adjusting individually the actuator at the interval between described two above anode components and the platen;
Handle gas source, mix up the chamber coupling with described plasma, the plasma that comprises the ion of handling gas produces in the plasma discharge between described anode and described platen; And
Clock is used for pulse is added between described platen and the described anode ion from plasma is quickened towards workpiece.
15. one kind is used for the method that plasma mixes up, this method comprises the steps:
Mix up in the chamber workpiece support on platen at plasma;
Mix up in the chamber according to placing anode with the platen spaced relationship at plasma, described anode has two above anode components;
Adjust the interval between one or more described anode components and the platen; And
Between anode and platen, produce plasma and the ion from plasma is quickened towards workpiece.
16. according to the method for claim 15, wherein workpiece comprises semiconductor wafer, and adjustment step at interval comprises the interval of adjusting described anode component as the function of radius with respect to the center of semiconductor wafer.
17. according to the method for claim 15, wherein anode component comprises annular distance, and adjustment step at interval comprises the interval that is adjusted between one or more annular distances and the platen.
18. a plasma mixes up device, comprising:
There is the plasma of cylindrical shape geometry to mix up the chamber;
Platen mixes up to be used for supporting workpiece in the chamber at described plasma;
Anode mixes up in the chamber at described plasma and to separate with described platen;
Handle gas source, mix up the chamber coupling with described plasma, the plasma that comprises the ion of process gas is to produce in the plasma discharge between described anode and described platen;
Clock is used for pulse is added between described platen and the described anode ion from plasma is quickened towards workpiece; And
Numerous magnetic elements are arranged in the dose uniformity that the radial density distribution that is used for controlling the plasma in the plasma discharge around the plasma discharge is controlled the ion that injects workpiece whereby.
19. the plasma according to claim 18 mixes up device, wherein said magnetic element be arranged on the described anode or near.
20. the plasma according to claim 19 mixes up device, wherein said magnetic element is arranged in one or more annular distances.
21. the plasma according to claim 19 mixes up device, wherein said magnetic element arranged radially is to form the spoke-like configuration.
22. the plasma according to claim 18 mixes up device, the polar surface article on plasma body region of discharge of wherein said magnetic element to replace.
23. the plasma according to claim 18 mixes up device, wherein said magnetic element is to dispose for the plasma density that increases the plasma discharge outside.
24. the plasma according to claim 18 mixes up device, wherein said magnetic element is arranged in the plasma discharge cylindrical array on every side.
25. the plasma according to claim 24 mixes up device, wherein said magnetic element comprises the axial magnetic element in the face of the plasma discharge alternating polarity.
26. the plasma according to claim 18 mixes up device, further comprises the coreless armature that surrounds plasma discharge, wherein said magnetic element be arranged on the described coreless armature or near.
27. the plasma according to claim 18 mixes up device, wherein said magnetic element is adjoining the region generating cusp magnetic fields of plasma discharge.
28. one kind is used for the method that plasma mixes up, this method comprises the steps:
On plasma mixes up in the chamber the workpiece support platen;
Mix up in the chamber at plasma and to produce plasma and the ion from plasma is quickened towards workpiece; And
The radial density distribution that relies on magnetic control plasma, the dose uniformity of the ion of workpiece is injected in control whereby.
29., wherein rely on the step of the radial density distribution of control plasma to comprise with the magnetic element control radial density distribution that produces the radial magnetic field profile figure that stipulates according to the method for claim 28.
30., wherein rely on the step of the radial density distribution of magnetic control plasma to comprise one or more annular distances control radial density distribution of using the magnetic element that adjoins the plasma arrangement according to the method for claim 28.
31., wherein rely on the step of the radial density distribution of magnetic control plasma to comprise the magnetic element control radial density distribution that forms the spoke-like configuration with arranged radially according to the method for claim 28.
32., wherein rely on the step of the radial density distribution of magnetic control plasma to comprise that the increase plasma mixes up the plasma density of outdoor according to the method for claim 28.
33., wherein rely on the step of the radial density distribution of magnetic control plasma to comprise and adjoin magnetic field that plasma mixes up the specified portions of chamber and increase plasma density in the specified portions that plasma mixes up the chamber by providing according to the method for claim 28.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/006,462 US20030101935A1 (en) | 2001-12-04 | 2001-12-04 | Dose uniformity control for plasma doping systems |
| US10/006,462 | 2001-12-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1613130A true CN1613130A (en) | 2005-05-04 |
Family
ID=21721017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA028266730A Pending CN1613130A (en) | 2001-12-04 | 2002-10-24 | Uniformity control for plasma doping systems |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20030101935A1 (en) |
| EP (1) | EP1464067A1 (en) |
| JP (1) | JP2005512318A (en) |
| KR (1) | KR20040058362A (en) |
| CN (1) | CN1613130A (en) |
| TW (1) | TW200300952A (en) |
| WO (1) | WO2003049142A1 (en) |
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| CN108551716A (en) * | 2018-07-06 | 2018-09-18 | 中国科学技术大学 | A kind of plasma generating apparatus |
| CN110828272A (en) * | 2018-08-09 | 2020-02-21 | 北京北方华创微电子装备有限公司 | Chamber liner, lower electrode device and semiconductor processing equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101765679B (en) * | 2007-07-07 | 2013-01-09 | 瓦里安半导体设备公司 | Conformal doping using high neutral plasma implant |
| CN102150239A (en) * | 2008-08-28 | 2011-08-10 | 瓦里安半导体设备公司 | High density helicon plasma source for wide ribbon ion beam generation |
| CN102471880A (en) * | 2009-07-01 | 2012-05-23 | 瓦里安半导体设备公司 | System and method for selectively controlling ion composition of ion sources |
| CN108551716A (en) * | 2018-07-06 | 2018-09-18 | 中国科学技术大学 | A kind of plasma generating apparatus |
| CN110828272A (en) * | 2018-08-09 | 2020-02-21 | 北京北方华创微电子装备有限公司 | Chamber liner, lower electrode device and semiconductor processing equipment |
| CN110828272B (en) * | 2018-08-09 | 2022-09-16 | 北京北方华创微电子装备有限公司 | Chamber liner, lower electrode device and semiconductor processing equipment |
| JP2021048415A (en) * | 2020-12-14 | 2021-03-25 | 東京エレクトロン株式会社 | Substrate processing device and substrate for measurement |
| JP7050139B2 (en) | 2020-12-14 | 2022-04-07 | 東京エレクトロン株式会社 | Board processing equipment and measurement board |
Also Published As
| Publication number | Publication date |
|---|---|
| US20030101935A1 (en) | 2003-06-05 |
| TW200300952A (en) | 2003-06-16 |
| JP2005512318A (en) | 2005-04-28 |
| KR20040058362A (en) | 2004-07-03 |
| WO2003049142A1 (en) | 2003-06-12 |
| EP1464067A1 (en) | 2004-10-06 |
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