CN1576234A - 制造低氧化铌的方法 - Google Patents
制造低氧化铌的方法 Download PDFInfo
- Publication number
- CN1576234A CN1576234A CNA2004100545226A CN200410054522A CN1576234A CN 1576234 A CN1576234 A CN 1576234A CN A2004100545226 A CNA2004100545226 A CN A2004100545226A CN 200410054522 A CN200410054522 A CN 200410054522A CN 1576234 A CN1576234 A CN 1576234A
- Authority
- CN
- China
- Prior art keywords
- niobium
- nbo
- temperature
- reaction
- pentoxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010955 niobium Substances 0.000 title claims abstract description 44
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 229910052758 niobium Inorganic materials 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims description 24
- 230000008569 process Effects 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 claims abstract description 21
- 239000003990 capacitor Substances 0.000 claims abstract description 16
- HFLAMWCKUFHSAZ-UHFFFAOYSA-N niobium dioxide Chemical compound O=[Nb]=O HFLAMWCKUFHSAZ-UHFFFAOYSA-N 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 239000000843 powder Substances 0.000 claims description 25
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 239000001257 hydrogen Substances 0.000 claims description 19
- 229910052739 hydrogen Inorganic materials 0.000 claims description 19
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 17
- 239000002245 particle Substances 0.000 claims description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 15
- 230000009467 reduction Effects 0.000 claims description 14
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 8
- 229910052749 magnesium Inorganic materials 0.000 claims description 8
- 239000011777 magnesium Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 239000011164 primary particle Substances 0.000 claims description 4
- 239000007858 starting material Substances 0.000 claims description 3
- 239000007795 chemical reaction product Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 abstract description 11
- 239000007784 solid electrolyte Substances 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000000395 magnesium oxide Substances 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 5
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000011067 equilibration Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000005518 polymer electrolyte Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Classifications
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
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- C01G33/00—Compounds of niobium
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
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- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
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Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2003133156 DE10333156A1 (de) | 2003-07-22 | 2003-07-22 | Verfahren zur Herstellung von Niobsuboxid |
DE10333156.5 | 2003-07-22 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2008101098270A Division CN101298340A (zh) | 2003-07-22 | 2004-07-22 | 制造低氧化铌的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1576234A true CN1576234A (zh) | 2005-02-09 |
CN100404428C CN100404428C (zh) | 2008-07-23 |
Family
ID=34042009
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100545226A Expired - Lifetime CN100404428C (zh) | 2003-07-22 | 2004-07-22 | 低氧化铌、其制造方法和含有它的电容器 |
CNA2008101098270A Pending CN101298340A (zh) | 2003-07-22 | 2004-07-22 | 制造低氧化铌的方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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CNA2008101098270A Pending CN101298340A (zh) | 2003-07-22 | 2004-07-22 | 制造低氧化铌的方法 |
Country Status (15)
Country | Link |
---|---|
US (2) | US7341705B2 (zh) |
EP (2) | EP1508550B1 (zh) |
JP (2) | JP4317091B2 (zh) |
KR (1) | KR101129764B1 (zh) |
CN (2) | CN100404428C (zh) |
AU (1) | AU2004203208B2 (zh) |
BR (1) | BRPI0402986A (zh) |
DE (2) | DE10333156A1 (zh) |
IL (1) | IL163104A (zh) |
MX (1) | MXPA04007024A (zh) |
PH (1) | PH12008000260A1 (zh) |
PT (1) | PT1508550E (zh) |
RU (1) | RU2363660C2 (zh) |
TW (1) | TWI355424B (zh) |
ZA (1) | ZA200405851B (zh) |
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CN110963529A (zh) * | 2018-09-30 | 2020-04-07 | 中国科学院上海硅酸盐研究所 | 一种纯相的铌的低价态氧化物纳米粉体及其制备方法和应用 |
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2003
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2004
- 2004-07-16 PT PT04016842T patent/PT1508550E/pt unknown
- 2004-07-16 AU AU2004203208A patent/AU2004203208B2/en not_active Ceased
- 2004-07-16 EP EP20040016842 patent/EP1508550B1/de not_active Expired - Lifetime
- 2004-07-16 EP EP20090154754 patent/EP2078699A1/de not_active Withdrawn
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- 2004-07-21 KR KR1020040056654A patent/KR101129764B1/ko not_active IP Right Cessation
- 2004-07-21 RU RU2004122053A patent/RU2363660C2/ru active
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110963529A (zh) * | 2018-09-30 | 2020-04-07 | 中国科学院上海硅酸盐研究所 | 一种纯相的铌的低价态氧化物纳米粉体及其制备方法和应用 |
CN110963529B (zh) * | 2018-09-30 | 2021-12-07 | 中国科学院上海硅酸盐研究所 | 一种纯相的铌的低价态氧化物纳米粉体及其制备方法和应用 |
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JP2009143804A (ja) | 2009-07-02 |
MXPA04007024A (es) | 2005-03-23 |
US20050019581A1 (en) | 2005-01-27 |
KR101129764B1 (ko) | 2012-03-26 |
TWI355424B (en) | 2012-01-01 |
EP1508550B1 (de) | 2009-04-08 |
BRPI0402986A (pt) | 2005-05-24 |
IL163104A (en) | 2007-10-31 |
AU2004203208A1 (en) | 2005-02-10 |
EP1508550A1 (de) | 2005-02-23 |
RU2004122053A (ru) | 2006-01-27 |
CN101298340A (zh) | 2008-11-05 |
CN100404428C (zh) | 2008-07-23 |
AU2004203208B2 (en) | 2009-07-23 |
US7341705B2 (en) | 2008-03-11 |
US20090242853A1 (en) | 2009-10-01 |
PH12008000260A1 (en) | 2006-03-07 |
JP5630962B2 (ja) | 2014-11-26 |
RU2363660C2 (ru) | 2009-08-10 |
PT1508550E (pt) | 2009-05-22 |
DE502004009299D1 (de) | 2009-05-20 |
ZA200405851B (en) | 2005-09-28 |
DE10333156A1 (de) | 2005-02-24 |
EP2078699A1 (de) | 2009-07-15 |
TW200516157A (en) | 2005-05-16 |
KR20050011700A (ko) | 2005-01-29 |
JP2005041774A (ja) | 2005-02-17 |
JP4317091B2 (ja) | 2009-08-19 |
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