CN1568094A - Array type micro-electromechanic capacitor microphone - Google Patents
Array type micro-electromechanic capacitor microphone Download PDFInfo
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- CN1568094A CN1568094A CN 03145290 CN03145290A CN1568094A CN 1568094 A CN1568094 A CN 1568094A CN 03145290 CN03145290 CN 03145290 CN 03145290 A CN03145290 A CN 03145290A CN 1568094 A CN1568094 A CN 1568094A
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Abstract
The invention supplied a array mode micro-electromechanical capacitive microphone. It includes a foundation support and capacitive microphone device packaged in the foundation support. The capacitive microphone device contains basis material and a pair of analog calculus devices that run under the electronic signal produced by the unit of the capacitive microphone mentioned previously. Thus, the array micro-electromechanical capacitive microphone has high directivity and high signal to noise ratio.
Description
(1) technical field
The present invention relates to a kind of Electret Condencer Microphone, be meant the Electret Condencer Microphone that forms with micro electro mechanical system (MEMS) technology especially.
(2) background technology
Microphone for example generally is used in the electronic product such as mobile phone already, along with described electronic product toward frivolous, small and exquisite development trend, the volume of microphone is microminiaturization constantly also.
At present, existing many correlative studys, root in nineteen sixty for mid-term, utilize MEMS (micro electro mechanical system) (the Micro-electromechanical Systems of manufacture of semiconductor manufacturing machine structure on silicon wafer, MEMS), must comprise multinomial functions such as sensing, actuating, signal processing, control simultaneously in order to make, simultaneously volume is again must be atomic little and be applicable to the Electret Condencer Microphone of electronic product such as mobile phone for example.For example, Japanese kokai publication hei 11-331988 number " micro electronmechanical processing electret condenser microphone ", spy open " micro electronmechanical processing electret condenser microphone " 2000-165999 number, and the spy opens Japanese patent application cases such as " autofrettage of micro electronmechanical processing electret condenser microphone and micro electronmechanical processing electret condenser microphones " 2001-69596 number, all be to use micro electro mechanical system (MEMS) technology, reduce the volume of an electret capacitor of Electret Condencer Microphone, and then produce the single Electret Condencer Microphone of volume microminiaturization.
But along with when the volume of Electret Condencer Microphone changes toward frivolous, small and exquisite direction, its relative directive property and signal to noise ratio can be along with variation, and the environment for use demand complicated and changeable of deposited current electronic product not.Though, industry is arranged with an array formula (matrix) with a plurality of single Electret Condencer Microphones at present, and form a microphone mechanism that comprises a plurality of single Electret Condencer Microphones, and after solving single Electret Condencer Microphone reduction in bulk, the problem of its directive property and signal to noise ratio variation.Yet, because all being independent processing procedure preparation, finishes by each Electret Condencer Microphone, therefore, though the quality of respective capacitances formula microphone all satisfies the QC requirement of initial designs.In fact, the directive property of each Electret Condencer Microphone and signal to noise ratio still have difference slightly, thereby cause difficulty when integrating described Electret Condencer Microphone and becoming array to be provided with, and need the many extra Time Calculation of cost, adjustment, make this microphone mechanism have predetermined high directivity and signal to noise ratio.
Therefore, how can produce the small and exquisite Electret Condencer Microphone of volume in conjunction with micro electro mechanical system (MEMS) technology, and simultaneously have high directivity and signal to noise ratio with the Electret Condencer Microphone of array format setting, be the direction that current microphone dealer constantly studies effort.
(3) summary of the invention
The object of the present invention is to provide a kind of micro electronmechanical Electret Condencer Microphone of array that directly forms with micro electro mechanical system (MEMS) technology.
The micro electronmechanical Electret Condencer Microphone of a kind of array of the present invention comprises a pedestal and and is arranged at capacitive microphone device in this pedestal.
This capacitive microphone device, be to form with a micro electro mechanical system (MEMS) technology, has a base material, and a plurality of Electret Condencer Microphone unit that are formed on this base material, this each Electret Condencer Microphone unit includes an electrode layer, one from the downward vibrating membrane (diaphragm) that forms of this electrode layer, one from the downward backboard (back plate) that forms of this electrode layer, and a plurality of sound holes (acoustic hole) of this backboard of break-through respectively, this electrode layer, vibrating membrane, with backboard is to polarize earlier to form an electric capacity jointly, this vibrating membrane and this backboard define an air chamber jointly, and this backboard and this base material is connected and define jointly one the back of the body air chamber (back chamber), this air chamber borrows this perforation to be connected with back of the body air chamber, supply an air-flow at this air chamber, flow between back of the body air chamber and this sound hole, and make when receiving a sound source, this vibrating membrane produces corresponding deformation and this electric capacity is changed.
Effect of the present invention is to make the micro electronmechanical Electret Condencer Microphone of array to have high directivity and high s/n ratio.
(4) description of drawings
The present invention is described in detail below in conjunction with drawings and Examples:
Fig. 1 is a stereogram, and a preferred embodiment of the micro electronmechanical Electret Condencer Microphone of array of the present invention is described.
Fig. 2 is a stereogram, a capacitive microphone device of the micro electronmechanical Electret Condencer Microphone of key diagram 1 array.
Fig. 3 is a cutaway view, an Electret Condencer Microphone unit of key diagram 2 capacitive microphone devices.
Fig. 4 is a schematic diagram, a simulation calculation apparatus of the micro electronmechanical Electret Condencer Microphone of key diagram 1 array.
Fig. 5 is a cutaway view, when as shown in Figure 3 Electret Condencer Microphone unit of a micro electro mechanical system (MEMS) technology manufacturing is described, implements the corresponding aspect of one after the step of this micro electro mechanical system (MEMS) technology.
Fig. 6 is a cutaway view, when as shown in Figure 3 Electret Condencer Microphone unit of a micro electro mechanical system (MEMS) technology manufacturing is described, implements the corresponding aspect of one after the step of this micro electro mechanical system (MEMS) technology.
Fig. 7 is a cutaway view, when as shown in Figure 3 Electret Condencer Microphone unit of a micro electro mechanical system (MEMS) technology manufacturing is described, implements the corresponding aspect of one after the step of this micro electro mechanical system (MEMS) technology.
Fig. 8 is a cutaway view, when as shown in Figure 3 Electret Condencer Microphone unit of a micro electro mechanical system (MEMS) technology manufacturing is described, implements the corresponding aspect of one after the step of this micro electro mechanical system (MEMS) technology.
Fig. 9 is a cutaway view, illustrates when a micro electro mechanical system (MEMS) technology is made Electret Condencer Microphone unit shown in Figure 3, implements the corresponding aspect of one after the step of this micro electro mechanical system (MEMS) technology.
Figure 10 is a cutaway view, when as shown in Figure 3 Electret Condencer Microphone unit of a micro electro mechanical system (MEMS) technology manufacturing is described, implements the corresponding aspect of one after the step of this micro electro mechanical system (MEMS) technology.
Figure 11 is a cutaway view, when as shown in Figure 3 Electret Condencer Microphone unit of a micro electro mechanical system (MEMS) technology manufacturing is described, implements the corresponding aspect of one after the step of this micro electro mechanical system (MEMS) technology.
Figure 12 is a cutaway view, when as shown in Figure 3 Electret Condencer Microphone unit of a micro electro mechanical system (MEMS) technology manufacturing is described, implements the aspect that a vibrating diaphragm chip of Electret Condencer Microphone unit is finished in the corresponding preparation of one after the step of this micro electro mechanical system (MEMS) technology.
Figure 13 is a cutaway view, when as shown in Figure 3 Electret Condencer Microphone unit of a micro electro mechanical system (MEMS) technology manufacturing is described, implements the corresponding aspect of one after the step of this micro electro mechanical system (MEMS) technology.
Figure 14 is a cutaway view, when as shown in Figure 3 Electret Condencer Microphone unit of a micro electro mechanical system (MEMS) technology manufacturing is described, implements the corresponding aspect of one after the step of this micro electro mechanical system (MEMS) technology.
Figure 15 is a cutaway view, when as shown in Figure 3 Electret Condencer Microphone unit of a micro electro mechanical system (MEMS) technology manufacturing is described, implements the corresponding aspect of one after the step of this micro electro mechanical system (MEMS) technology.
Figure 16 is a cutaway view, when as shown in Figure 3 Electret Condencer Microphone unit of a micro electro mechanical system (MEMS) technology manufacturing is described, implements the corresponding aspect of one after the step of this micro electro mechanical system (MEMS) technology.
Figure 17 is a cutaway view, when as shown in Figure 3 Electret Condencer Microphone unit of a micro electro mechanical system (MEMS) technology manufacturing is described, implements the corresponding aspect of one after the step of this micro electro mechanical system (MEMS) technology.
Figure 18 is a cutaway view, when as shown in Figure 3 Electret Condencer Microphone unit of a micro electro mechanical system (MEMS) technology manufacturing is described, implements the corresponding aspect of one after the step of this micro electro mechanical system (MEMS) technology.
Figure 19 is a cutaway view, when as shown in Figure 3 Electret Condencer Microphone unit of a micro electro mechanical system (MEMS) technology manufacturing is described, implements the corresponding aspect of one after the step of this micro electro mechanical system (MEMS) technology.
Figure 20 is a cutaway view, when as shown in Figure 3 Electret Condencer Microphone unit of a micro electro mechanical system (MEMS) technology manufacturing is described, implements the aspect of the corresponding back board wafer of one after the step of this micro electro mechanical system (MEMS) technology.
Figure 21 is a flow chart, illustrates that a static simulation unit by using finite difference calculus comes the recursive macro call of analysis and solution one vibrating membrane deflection.
Figure 22 is the analog solution of the vibrating membrane of being tried to achieve with finite difference calculus shown in Figure 21.
Figure 23 is a circuit diagram, and an analog circuit of a dynamic analog unit is described.
Figure 24 is with analog circuit shown in Figure 23, simulates a frequency response of the micro electronmechanical Electret Condencer Microphone of array of the present invention.
Figure 25 is an array calculation sub-cell of a filter analogue unit, utilizes the MUSIC algorithm to try to achieve a thin narrow wave beam.
Figure 26 is that the micro electronmechanical Electret Condencer Microphone of array of the present invention is through the wave beam template drawing behind the designed digital filter.
Figure 27 is the wave beam template drawing after the micro electronmechanical Electret Condencer Microphone of array of the present invention does not pass through a designed digital filter.
Figure 28 is one of them Electret Condencer Microphone unit of capacitive microphone device of a 1x4 arranged, frequency range with design is 10k Hz, sampling frequency is 200k Hz, spacing is 5mm, actual in filter analogue unit Simulation result, and solid line is the frequency response of former digital filter among the figure, and dotted line is the result of analog filter.
Figure 29 is capacitive microphone device another Electret Condencer Microphone unit wherein of a 1x4 arranged, frequency range with design is 10k Hz, sampling frequency is 200k Hz, spacing is 5mm, actual in filter analogue unit Simulation result, and solid line is the frequency response of former digital filter among the figure, and dotted line is the result of analog filter.
Figure 30 is capacitive microphone device another Electret Condencer Microphone unit wherein of a 1x4 arranged, frequency range with design is 10k Hz, sampling frequency is 200k Hz, spacing is 5mm, actual in filter analogue unit Simulation result, and solid line is the frequency response of former digital filter among the figure, and dotted line is the result of analog filter.
Figure 31 is capacitive microphone device another Electret Condencer Microphone unit wherein of a 1x4 arranged, frequency range with design is 10k Hz, sampling frequency is 200k Hz, spacing is 5mm, actual in filter analogue unit Simulation result, and solid line is the frequency response of former digital filter among the figure, and dotted line is the result of analog filter.
Figure 32 utilizes Matlab to calculate, the result of the wave beam of process filter analogue unit and the wave beam of non-filtered device analogue unit, and explanation is narrower through the wave beam of filter analogue unit, directive property improves.
(5) embodiment
Before describing ins and outs of the present invention in detail, what will specify earlier is, for ask clear for the purpose of, below all with actual processing procedure, and various explanation numeral, unit, material or the like describe, but know acoustic energy, electric energy, mechanical energy scheduling theory and transformational relation, micro electro mechanical system (MEMS) technology processing procedure mutually, all can learn easily with the technical staff of microphone, the present invention is the therefore explanation of a little actual processing procedures not, and described numeral, unit material or the like exceed, and limit practical application of the present invention.
As shown in Figure 1 and Figure 2, the micro electronmechanical Electret Condencer Microphone 1 of a kind of array of the present invention comprises a pedestal 11, a capacitive microphone device 2, a simulation calculation apparatus 4, and a field-effect transistor (FieldEmission Transistor; FET) 100.
This pedestal 11 defines an accommodation space 111, and can be with capacitive microphone device 2, simulation calculation apparatus 4, and field-effect transistor 100 is packaged in the accommodation space 111 that pedestal 11 defines with being electrically connected to each other, and pedestal 11 can be electrically connected on the motherboard (scheming not shown).Make after capacitive microphone device 2 receives an acoustic energy, simulation calculation apparatus 4 and field-effect transistor 100 can convert thereof in the electronic signal jointly and send out.
Consult Fig. 2, capacitive microphone device 2 is to use micro electro mechanical system (MEMS) technology to form, and its manufacture process please be detailed later.This capacitive microphone device 2 has a substrate 21, and a plurality ofly be formed at Electret Condencer Microphone unit 3 on this substrate 21 with array, this example for make explanation clear for the purpose of, utilizing four Electret Condencer Microphone unit 3 is the example explanation with a 1x4 arranged, can certainly 16 Electret Condencer Microphone unit with 4x4 arranged etc., because the kenel of arranged is various, in this illustrated in greater detail not.
Consult Fig. 3, each Electret Condencer Microphone unit 3 includes an electrode layer 31, one from these electrode layer 31 downward vibrating membranes 32 that form, one by these vibrating membrane 32 more downward spacing pads that form 33, one backboard 34 that is connected with this spacing pad 33, the sound hole 35 of this backboard 34 of a plurality of break-through, an and bonding pad 36 from these backboard 34 more downward formation, electrode layer 31, vibrating membrane 32, with backboard 34 is to polarize earlier to form an electric capacity jointly, vibrating membrane 32, spacing pad 33 defines an air chamber 37 jointly with backboard 34, and after bonding pad 36 links with substrate 21, bonding pad 36, backboard 34 defines a back of the body air chamber 38 jointly with base material 21, air chamber 37 borrows this sound hole 35 to be connected with back of the body air chamber 38, supplies an air-flow at air chamber 34,35 of back of the body air chamber 38 and sound holes flow.When receiving an acoustic energy, vibrating membrane 32 produces corresponding deformation and makes electrode layer 31, vibrating membrane 32, and the electric capacity that forms with backboard 34 polarization earlier changes.
Consult Fig. 4, simulation calculation apparatus 4 electrically connects with capacitive microphone device 2, have one can analog vibration film 32 the static simulation unit 41 of a static behavior, one simulates the dynamic analog unit 42 of a dynamic response of this one of them Electret Condencer Microphone unit 3 with this static behavior, the impedance of one this one of them Electret Condencer Microphone unit 3 of coupling, to shift the buffer amplifier analogue unit 43 of this dynamic response of output, one amplifies the signal amplifier analogue unit 44 that this buffer amplifier analogue unit 43 shifts the dynamic response of output, and the filter analogue unit 45 of this dynamic response of filtration, whereby, can make capacitive microphone device 2 produce high directivity, and improve signal to noise ratio.Because the structure detail and the operation of simulation calculation apparatus 4 are complicated, please illustrate in detail by Rong Houzai.
This field-effect transistor 100 is existing electronic components, electrically connects with capacitive microphone device 2 and simulation calculation apparatus 4 simultaneously, corresponding electric capacity behind the capacitive microphone device 2 reception acoustic energy can be changed, and converts an electronic signal to and sends out.
Capacitive microphone device 2 is to use micro electro mechanical system (MEMS) technology to make simultaneously, mainly is with silicon, or siliceous compound, for example silicon nitride (Si
3N
4), silicon dioxide (SiO
2) be material, certainly, other are benzocyclobutene (Benzocyclobutene for example; BCB), poly-imines photoresistance (PhotoResistor such as (polyimide); PR) material also can be suitable for; And optionally can select and can repeatedly carry out the inferior processing procedure that semiconductor wafers such as film growth, little shadow cover curtain, etching moulding carry out, or the Precision Machining that is comprised in the micro electro mechanical system (MEMS) technology time technology and the little processing of silicon time technology, certainly the personnel that know micro electro mechanical system (MEMS) technology all know, the little processing of silicon time technology comprises the little procedure for processing of build, the little procedure for processing of face type that carries out the etching cutting process with silicon wafer, and micro-lithography electroforming modeling processing procedure (LIGA process; Wherein LIGA is the abbreviation of German word Lithographie Galvanoformung Abformung), and the visual actual needs of the little procedure for processing of face type, selectively repeat the inferior processing procedure of evaporation (Evaporation), the inferior processing procedure of sputter (Sputtering), and chemical deposition (Chemical Vapor Deposition; CVD) inferior processing procedure etc.; The visual again actual needs of micro-lithography electroforming modeling processing procedure repeats photoetch time processing procedure or the like, and makes that in the process of making capacitive microphone device 2, the finished product of each member, half-finished accuracy can be accurate to several microns.Because micro electro mechanical system (MEMS) technology is the development and application many decades, above-mentioned mentioned inferior technology, processing procedure, inferior processing procedure have all become each particular study field, known by the people in the industry, and emphasis of the present invention is not that the details of each time technology of being micro electro mechanical system (MEMS) technology and comprising, processing procedure, inferior processing procedure is improved, so at this do not add to explain one by one this time technology, processing procedure, inferior processing procedure.But make capacitive microphone device 2 as micro electro mechanical system (MEMS) technology how in order to be illustrated more clearly in the present invention, below be illustrated with the manufacture process of a reality, but the technical staff who knows micro electro mechanical system (MEMS) technology is when knowing that manufacture process of the present invention is not exceeded in the following instructions.
Below for make explanation make a plurality of Electret Condencer Microphones Unit 3 of capacitive microphone device 2 clear for the purpose of, only illustrate an Electret Condencer Microphone unit 3 in the diagram and be the example explanation.
Consult Fig. 5, at first at the opposite upper and lower silicon oxide layer 62,63 of a silicon substrate 61 upper films deposition.Then as shown in Figure 6, first and second silicon nitride layer 64,65 in difference thin film deposition on the upper and lower silicon oxide layer 62,63.Then, be coated with photoresistance on first silicon nitride layer 64, and use the light shield (Photo Mask) with predetermined image (Pattern) and expose (Exposure), develop (Development), formation one has the photoresist layer 66 of predetermined image, as shown in Figure 7.Carry out dry ecthing (Dry Etching) again, remove photoresist layer 66, part first silicon nitride layer 64 simultaneously and partly go up silicon oxide layer 62, make first silicon nitride layer 64 and last silicon oxide layer 62 have predetermined image, and make part silicon substrate 61 exposed, as shown in Figure 8 corresponding to light shield.Consult Fig. 9, then carry out wet etching (Wet Etching), downward silicon oxide layer 63 directions of silicon substrate 61 exposed parts are etched a hole 67, until silicon oxide layer 63 is exposed down.The following silicon oxide layer 63 that will expose again, silicon substrate 61, go up silicon oxide layer 62, form this electrode layer 31 with first silicon nitride layer, 64 plating, one metal, as shown in figure 10.Consult Figure 11, and then be coated with an electret (electret material) 68 on the silicon oxide layer 63 down, make down silicon oxide layer 63, second silicon nitride layer 65 form these vibrating membranes 32 with this electret 68.Then, as shown in figure 12, with silicon dioxide, or for example resistance material such as benzocyclobutene, poly-imines forms this spacing pad 33 downwards from this electret 68.Then, finish the preparation of a vibrating diaphragm chip 6 of Electret Condencer Microphone unit 3 with electret 68 charging lotuses.
Consult Figure 13, again in the opposite upper and lower silicon nitride (Si of another silicon substrate 7 upper films deposition
3N
4) layer 72,73.Then as shown in figure 14, be coated with photoresistance on the silicon nitride layer 73 down, and using light shield and expose, develop, forming photoresist layer 74 with predetermined image with predetermined image.Carry out dry ecthing then, remove photoresist layer 74 and part silicon nitride layer 73 down simultaneously, make down silicon nitride layer 73 have predetermined image, and part silicon substrate 71 is exposed, as shown in figure 15 corresponding to light shield.Consult Figure 16, then carry out wet etching, silicon substrate 71 exposed parts silicon nitride layer 72 directions that make progress are etched a hole 75, at this moment, not etched part silicon substrate 71 and following silicon nitride layer 73 these bonding pads 36 of formation.Then as shown in figure 17, on last silicon nitride layer 72, be coated with photoresistance, and use light shield and expose, develop, form photoresist layer 76 with predetermined image with predetermined image.Then carry out dry ecthing again, remove photoresist layer 76 simultaneously and go up silicon nitride layer 72 with part, make silicon nitride layer 72 form a plurality of perforation 77 of a plurality of predetermined images corresponding to light shield, and make the silicon substrate 71 of corresponding described perforation 77 parts exposed simultaneously, as shown in figure 18.Consult Figure 19, then carry out wet etching, with described perforation 77 barish silicon substrate 71 etchings of correspondence, make described perforation 77 of going up silicon nitride layer 72 extend penetrated section silicon substrates 71, form the described sound hole 35 that is connected with hole 75 that Figure 16 is etched respectively.At last, consult Figure 20, silicon nitride layer 72 plates a metal and forms a dorsum electrode layer 78 on after the etching, makes last silicon nitride layer 72 common these backboards 34 that form after this dorsum electrode layer 78, the etching, finishes the preparation of a back board wafer 7 of Electret Condencer Microphone unit 3.
Consult Fig. 3 simultaneously, vibrating diaphragm chip 6 is stacked on the back board wafer 7, and spacing pad 33 is linked on the dorsum electrode layer 78, at this moment, vibrating membrane 32, spacing pad 33 define this air chamber 37 with backboard 34, and finish the preparation of Electret Condencer Microphone unit 3.Back board wafer 7 is linked on this substrate 21 with bonding pad 36, at this moment, substrate 21, bonding pad 36 define back of the body air chamber 38 jointly with backboard 34, and finish the preparation of capacitive microphone device 2 again.
Below static simulation unit 41, dynamic analog unit 42, buffer amplifier analogue unit 43, the signal amplifier analogue unit 44 of the calculation apparatus 4 of explanation simulation in regular turn reach a filter analogue unit 45.
Static simulation unit 41 is the analog array static behaviors of dynamo-electric Electret Condencer Microphone 1 that decline, and can be more accurate when making micro electronmechanical Electret Condencer Microphone 1 dynamic response of array; And the deflection that static behavior involving vibrations film 32 produces when accepting acoustic pressure, and vibrating membrane 32 is subjected to the deflection that electrostatic force produced of 34 of vibrating membrane 32 and backboards; Because mechanical, electrical, three kinds of physical quantitys of sound that the analysis of microphone must be considered simultaneously, therefore, static simulation unit 41 utilizes finite difference calculus (Finite Differences Method) to analyze, and carries out following steps in regular turn:
A) hypothesis vibrating membrane 32 deflection little than vibrating membrane 32 thickness, then on the vibrating membrane 32 equidistributed each
The deflection of point can be represented by the mathematics balanced type of formula one with the stress that imposes on the vibrating membrane 32,
Wherein, h
dBe the thickness of vibrating membrane 32; (x y) is vibrating membrane 32 flexural functions to w; C
11=C
12, C
12=C
21And C
44It is the material constant of vibrating membrane 32; q
SpBe the suffered acoustic pressure of vibrating membrane 32; q
ElElectrostatic attraction for Dc bias; σ
dInternal stress for vibrating membrane 32.
B) considering vibrating membrane 32 is not the attraction that is subjected to the even electrostatic force of onesize distribution; Therefore it is as follows electrostatic attraction etc. to be changed into formula two,
Wherein, ε
dIt is the relative dielectric constant (Relative DielectricConstant) of vibrating membrane 32 materials; ε
0It is the vacuum dielectric radio; V
BaIt is Dc bias; K
HolesFor revising the modifying factor of backboard 34 induction amount of electrons.
C) utilize finite difference calculus to try to achieve numerical solution; And it is approximate to utilize second differnce that the deflection formula of vibrating membrane 32 is come with limited number point, and abbreviation becomes the deflection of vibrating membrane 32 and the relation of vibrating membrane 32 upper stresses, shown in three
A
0?w(x，y)+A
1?w(x-Δ，y-Δ)+A
2?w(x-Δ，y)+
A
3?w(x-Δ，y+Δ)+A
4?w(x，y+Δ)+A
5?w(x+Δ，y+Δ)+
A
6W (the x+ Δ, y)+A
7W (x+ Δ, y-Δ)+A
8W (x, y-Δ)+(formula three)
A
9?w(x-2Δ，y)+A
10?w(x，y+2Δ)+A
11?w(x+Δ，y)+
A
12?w(x，y-2Δ)＝Δ
4(q
sp+q
el)
Wherein, A
0, A
1, A
2See also table one, can try to achieve the value of each coefficient; Δ is any 2 gap size;
Consider around the vibrating membrane 32 it is to inlay to fix and can not produce the point of deflection, and with this as boundary condition, and the each point on the vibrating membrane 32 can be changed into following matrix form:
A
dW=q
Sp+ q
El(formula four)
Wherein, w is the vector that the deflection of each point is lined up on the vibrating membrane 32 of the micro electronmechanical Electret Condencer Microphone 1 of array, and can Gaussian reduction find the solution.
The calculation that utilizes as shown in figure 21 finite difference calculus to find the solution the deflection of each point on the vibrating membrane 32 alternation procedure of pulling over can be tried to achieve the deflection analog solution as shown in figure 22 at vibrating membrane 32 centers; Simultaneously, whether try to achieve deflection greater than the spacing of vibrating membrane 32 with backboard 34, if surpass spacing, then vibrating membrane 32 is attached together with backboard 34, it is excessive with the Dc bias at backboard 34 two ends that expression imposes on vibrating membrane 32, cause the damage of the micro electronmechanical Electret Condencer Microphone 1 of array, so can test different Dc bias sizes repeatedly, use best sensitivity in the hope of the micro electronmechanical Electret Condencer Microphone 1 of array.
Dynamic behaviour when dynamic analog unit 42 declines dynamo-electric Electret Condencer Microphone 1 actual start in order to analog array, purpose is to analyze the frequency response of the micro electronmechanical Electret Condencer Microphone 1 of array, and can learn the performance of its actual start.
Consult Figure 23, dynamic analog unit 42 is set up the module of the micro electronmechanical Electret Condencer Microphone of array 1 each physical quantity system earlier with an analog circuit 5, dynamic behaviour is subdivided into sound system, mechanical system and electronic system, performs calculations again; This analog circuit 5 comprises a sound system loop 51, a mechanical system loop 52, an electronic system loop 53, machine transducing loop 54, an electromechanical transducing loop 55.
This sound system loop 51 is used for the acoustic pressure of dummy activity on vibrating membrane 32, has vibrating membrane equivalence acoustic impedance, one air chamber equivalence acoustic impedance, one sound hole equivalence acoustic impedance, and the equivalent acoustic impedance of a back of the body air chamber, this vibrating membrane equivalence acoustic impedance acts on acoustic pressure on the vibrating membrane 32 in order to the simulation sound source, this air chamber equivalence acoustic impedance is subjected to vibrating membrane 32 vibrations and the fluid behavior of generation in order to the simulation air-flow, the fluid behavior that this sound hole equivalence acoustic impedance is produced during through this sound hole 35 in order to the simulation air-flow, this back of the body air chamber equivalence acoustic impedance is in order to the fluid behavior of simulation air-flow in back of the body air chamber 38.
This mechanical system loop 52 has vibrating membrane equivalence mechanical impedance, is subjected to acoustic pressure in order to analog vibration film 32, and the vibration behavior that produced with the influence of carrying on the back air chamber 38 by air chamber 37.Owing to being subjected to acoustic pressure when vibrating membrane 32 and producing deflection, as crooked and vibration as the elastomer, therefore, mechanical system loop 52 utilizes an electric capacity and an inductance to simulate this situation herein.
This electronic system loop 53 has an equivalent electric capacity, the capacitance variations that is produced during in order to analog vibration film 32 vibration, and make 34 of vibrating membrane 32 and backboards be the dynamic response of an Electret Condencer Microphone unit 3 wherein corresponding to the frequency responses of the voltage output of capacitance variations.
This machine transducing loop 54 comprises a transformer, in order to coupling acoustic energy and mechanical energy, and can be in conjunction with sound system loop 51 and mechanical system loop 52, make between acoustic energy and mechanical energy can be accordingly power conversion mutually, at this, the number of turns of transformer is the surface area of vibrating membrane 32 than both.
This electromechanical transducing loop 55 comprises a transformer, in order to coupling machinery energy and electric energy, and can be in conjunction with mechanical system loop 52 and electronic system loop 53, making can mutual accordingly power conversion between mechanical energy and electric energy.
Because above-mentioned sound system loop 51, mechanical system loop 52, electronic system loop 53 etc. are with electronic component, for example resistance, inductance, electric capacity etc., simulate the true for example electronic loop of acoustic energy, mechanical energy or the like, because this kind analog form is not only of a great variety, the also existing ripe design software of industry can be supplied usefulness simultaneously, and this is not emphasis of the present invention place, thus this in detail the explanation give unnecessary details.
By above simulation calculation, utilize circuit analysis software (as PSPICE) or its transfer function of deriving, the frequency response of the dynamo-electric Electret Condencer Microphone 1 that can analog array declines, as shown in figure 24, its transverse axis is a frequency, and the longitudinal axis is the sensitivity of the micro electronmechanical Electret Condencer Microphone 1 of array for this reason.
Buffer amplifier analogue unit 43 has a P type channel mos (P-ChannelMetal Oxide Semiconductor; PMOS) field-effect transistor, this PMOS field-effect transistor has high output impedance and transferable output dynamic response.In the present invention, the purpose of buffer amplifier analogue unit 43 is to design a voltage follower, because of Electret Condencer Microphone can be considered an electric capacity, so when wanting output signal, can equivalence become a circuit of high pass filter, make that the signal of low frequency is poor excessively, at this, the multiplication factor of buffer amplifier analogue unit 43 is for one times and a less input impedance is provided, and can improve this kind phenomenon.Be stressed that at this purpose of design of buffer amplifier analogue unit 43 is not providing a novel buffer amplifier, but by this breadboardin provide one with actual conditions nearer like the result.
Signal amplifier analogue unit 44 is the forward amplifiers that are made of an operational amplifier.Its purpose is mainly at design one amplifying circuit, so as to the output signal of buffer amplifier analogue unit 43 is amplified; Similarly, the purpose of design of signal amplifier analogue unit 44 is similar to buffer amplifier analogue unit 43, and being not is providing a novel amplifying circuit design, and provides a preferable signal output, and small-signal can be amplified.
Filter analogue unit 45 comprises an array calculation sub-cell, and via the array signal processing mode, improves the signal to noise ratio of signal, and the method that provides an array wave beam to form, and strengthens the directive property of microphone.In the present invention, array calculation sub-cell mainly is to utilize the MUSIC algorithm can produce the characteristic of a very narrow wave beam, when model for referencial use, and the wave beam that produces by filter analogue unit 45 is similar to the MUSIC model in this wave beam.
Array calculation sub-cell carries out as follows in regular turn:
1) size of supposing this array equidistant linear array that an Electret Condencer Microphone unit is formed of serving as reasons.
2) utilize the MUSIC algorithm to produce the wave beam in a dead ahead,, try to achieve a thin narrow wave beam, as shown in figure 25 by the high directivity characteristic of MUSIC algorithm.
3), and be arranged in the vector of a Qx1 with above-mentioned MUSIC model equal angles sampling Q point:
Wherein, S
MUSICBe the five equilibrium vector arranged of MUSIC model at interval; S (θ
1) ... S (θ
Q) be five equilibrium angle θ at interval
1... θ
QThe model size.
1) suppose half frequency place of sampling frequency, just Nai Kuisi frequency (Nyquist Frequency) is f
s, with frequency 0...f
sFive equilibrium is spaced apart the P point, with
The frequency f (k) of representing k point (k=1...P).
2) under k frequency via the relation of array structure computing MUSIC model and the array signal matrix that goes out formula seven capable of being combined:
(formula seven)
Wherein, W
m(k) be under k the frequency, m the weight that Electret Condencer Microphone unit signal is multiplied by, m=1..M, and u
i(i=1...Q) can by
Try to achieve;
In the above-mentioned formula, f (k) can by
Try to achieve; C is the velocity of wave of sound wave; D is the distance of two Electret Condencer Microphone unit.
3) address least squares method (Least Square Method) in the utilization and find the solution unknown number W
1(k) ... W
M(k); And least squares method can be expressed as follows by the relational expression of formula nine:
Wherein, A is the matrix in left side in the formula seven, separates like trying to achieve recently with the form of formula nine, makes the vectorial S that the vector approximation of formula seven product gained is arranged in the MUSIC model
MUSICThe purpose of the β factor produces excessive value when being to prevent the computing of inverse matrix, in order to avoid separating of being tried to achieve can't allow filter analogue unit 45 realize; Therefore the value of suitably adjusting the β factor could realize optimum filter analogue unit 45; The I of formula nine is a unit matrix.
4), become matrix form according to P frequency permutation of first frequency to the in regular turn suc as formula ten with the weight of being tried to achieve
Wherein, the frequency response of the numerical digit filter of matrix column representative from first microphone to M the required process in Electret Condencer Microphone unit.
Low-frequency beamwidth of comparison Figure 26 and Figure 27 as can be known, and is narrower through the formed beamwidth of digital filter, just produces high directivity through digital filter.
8) convert above-mentioned digital filter to analog filter and present, being applicable to the micro electronmechanical Electret Condencer Microphone 1 of array, and can improving signal to noise ratio and produce the high directivity signal in dead ahead.
At this, utilize the invfreqs instruction of software Matlab to go to the frequency range place of the frequency response of approximate figure filter, and find out suitable analog circuit transfer function to the desire design.
9) with above-mentioned analog circuit transfer function, be divided into the form of second order, and try to achieve each electronic component parameter in the Biquad circuit; Again the output behind the micro electronmechanical Electret Condencer Microphone 1 process signal amplifier analogue unit 44 of above-mentioned Biquad circuit and array is linked to each other, simultaneously, can utilize circuit simulation software to research and analyse the result.
Four Electret Condencer Microphone unit with above-mentioned 1x4 arranged are example, the frequency range of supposing the desire design is 10kHz, sampling frequency is 200k Hz, the Electret Condencer Microphone unit interval is 5mm, Figure 28, Figure 29, Figure 30 and Figure 31 then are respectively the result of realistic simulation, and solid line is the frequency response of former digital filter among the figure, and dotted line is the result of analog filter.
Consult Figure 32, utilize Matlab to calculate, the wave beam of this filter analogue unit 45 of process is shown in solid line among the figure, wave beam without this filter analogue unit 45 is represented by dotted lines, relatively as can be known, wave beam through this filter analogue unit 45 is narrow without the wave beam of this filter analogue unit 45, can learn obviously that the directive property of the micro electronmechanical Electret Condencer Microphone 1 of array improves.
Conclude above-mentioned, the present invention is with the micro electro mechanical system (MEMS) technology manufacturing array dynamo-electric Electret Condencer Microphone 1 that declines, not only can produce the capacitive microphone device 2 that comprises a plurality of a plurality of Electret Condencer Microphones unit 3 that form with array simultaneously, simultaneously can be along with the development of micro electro mechanical system (MEMS) technology, progressive, and significantly reduce its finished-product volume, simultaneously to simulate the dynamic analog unit 42 of calculation apparatus 4, with analog circuit 5 simulations that each physical quantity system is independent separately, and set up out simultaneously relation between each physical quantity again, utilize transformer each physical quantity system that is coupled, and can adjust at each system for Simulation result, obtain the relation of microphone property and each system, so as to adjusting the optimization parameter, improve the signal to noise ratio of the micro electronmechanical Electret Condencer Microphone 1 of array; In addition, utilize the MUSIC model to seek narrow beam Array Microphone Filter Design with filter analogue unit 45, strengthen the directive property of the micro electronmechanical Electret Condencer Microphone 1 of array, and make the micro electronmechanical Electret Condencer Microphone 1 of array have high s/n ratio and high directivity, reach purpose of the present invention really.
Table one
Claims (23)
1. micro electronmechanical Electret Condencer Microphone of array comprises:
One defines the pedestal of an accommodation space; And
One is placed in the capacitive microphone device in this accommodation space, be to form with a micro electro mechanical system (MEMS) technology, has a base material, and a plurality of Electret Condencer Microphone unit that are formed on this base material, this each Electret Condencer Microphone unit includes an electrode layer, one from the downward vibrating membrane that forms of this electrode layer, one from the downward backboard that forms of this electrode layer, and a plurality of sound holes of this backboard of break-through respectively, this electrode layer, vibrating membrane, with backboard is to polarize earlier to form an electric capacity jointly, this vibrating membrane and this backboard define an air chamber jointly, and this backboard and this base material define a back of the body air chamber jointly, this air chamber borrows this perforation to be connected with back of the body air chamber, supply an air-flow at this air chamber, flow between back of the body air chamber and this sound hole, and make when receiving a sound source, this vibrating membrane produces corresponding deformation and this electric capacity is changed.
2. the micro electronmechanical Electret Condencer Microphone of array as claimed in claim 1 is characterized in that: also comprise a simulation calculation apparatus that electrically connects with this capacitive microphone device, have:
A static behavior of this vibrating membrane can be simulated in one static simulation unit;
A dynamic response of this Electret Condencer Microphone unit can this static behavior be simulated in one dynamic analog unit;
One buffer amplifier analogue unit, the impedance of mating this Electret Condencer Microphone unit is to shift this dynamic response of output; And
One filter analogue unit filters this dynamic response, makes the micro electronmechanical Electret Condencer Microphone of this array produce high directivity.
3. the micro electronmechanical Electret Condencer Microphone of array as claimed in claim 2, it is characterized in that: this simulation calculation apparatus also has a signal amplifier analogue unit, be to amplify the dynamic response that this buffer amplifier analogue unit shifts output, and this filter analogue unit is the dynamic response after this signal amplifier analogue unit of filtering amplifies, and makes the micro electronmechanical Electret Condencer Microphone of this array produce high directivity.
4. the micro electronmechanical Electret Condencer Microphone of array as claimed in claim 3 is characterized in that: this signal amplifier analogue unit is the forward amplifier that is made of an operational amplifier.
5. the micro electronmechanical Electret Condencer Microphone of array as claimed in claim 2 is characterized in that: this static simulation unit is to use a finite difference method, simulates the static behavior of this vibrating membrane.
6. the micro electronmechanical Electret Condencer Microphone of array as claimed in claim 2, it is characterized in that: the static behavior of this vibrating membrane is the deflection that this vibrating membrane produces when accepting an acoustic pressure, and the deflection that produced by the electrostatic force between this vibrating membrane and this backboard of this vibrating membrane.
7. the micro electronmechanical Electret Condencer Microphone of array as claimed in claim 2 is characterized in that: this dynamic analog unit is the dynamic response of simulating this Electret Condencer Microphone unit with an analog circuit.
8. the micro electronmechanical Electret Condencer Microphone of array as claimed in claim 7, it is characterized in that: this analog circuit comprises:
One sound system loop, have vibrating membrane equivalence acoustic impedance, air chamber equivalence acoustic impedance, sound hole equivalence acoustic impedance, and the equivalent acoustic impedance of a back of the body air chamber, this vibrating membrane equivalence acoustic impedance acts on acoustic pressure on this vibrating membrane in order to simulate this sound source, this air chamber equivalence acoustic impedance is subjected to this vibrating membrane vibration and the fluid behavior of generation in order to simulate this air-flow, this sound hole equivalence acoustic impedance is in order to simulate the fluid behavior that is produced when this air-flow passes through this sound hole, and this back of the body air chamber equivalence acoustic impedance is in order to simulate the fluid behavior of this air-flow in this back of the body air chamber;
One has the mechanical system loop of vibrating membrane equivalence mechanical impedance, and this vibrating membrane equivalence mechanical impedance is subjected to acoustic pressure in order to simulate this vibrating membrane, and the vibration behavior that produced with the influence of carrying on the back air chamber by this air chamber;
One has the electronic system loop of an equivalent electric capacity, this effect electric capacity is the dynamic response of this Electret Condencer Microphone unit in order to simulate the capacitance variations that is produced when this vibrating membrane vibrates and make the frequency response of exporting corresponding to the voltage of this capacitance variations between this vibrating membrane and backboard;
A machine transducing loop, in order in conjunction with this sound system loop and mechanical system loop, make between acoustic energy and mechanical energy can be accordingly power conversion mutually; And
One electromechanical transducing loop, in order in conjunction with this mechanical system loop and electronic system loop, make between mechanical energy and electric energy can be accordingly power conversion mutually.
9. the micro electronmechanical Electret Condencer Microphone of array as claimed in claim 8 is characterized in that: this machine transducing loop also comprises a transformer, in order to this acoustic energy and the mechanical energy of being coupled.
10. the micro electronmechanical Electret Condencer Microphone of array as claimed in claim 8 is characterized in that: this electromechanical transducing loop also comprises a transformer, in order to this mechanical energy and the electric energy of being coupled.
11. the micro electronmechanical Electret Condencer Microphone of array as claimed in claim 2, it is characterized in that: this buffering is amplified analogue unit and is had a P type channel mos field-effect transistor, and this P type channel mos field-effect transistor has high output impedance and this dynamic response of transferable output.
12. the micro electronmechanical Electret Condencer Microphone of array as claimed in claim 2, it is characterized in that: this filter analogue unit also comprises an array calculation sub-cell, produce high directivity when making the micro electronmechanical Electret Condencer Microphone of this array, and improve signal to noise ratio through this filter.
13. the micro electronmechanical Electret Condencer Microphone of array as claimed in claim 12 is characterized in that: this array calculation sub-cell carries out following steps in regular turn:
(a) determine this capacitive microphone device to comprise M Electret Condencer Microphone unit altogether;
(b) half that determines a sampling frequency just is the Nai Kuisi frequency;
(c) utilize a MUSIC algorithm to try to achieve the model of the high directivity of a predetermined direction;
(d) step (b) sound frequency range is divided into P frequency;
(e) respectively in this P frequency, the signal of each Electret Condencer Microphone unit is multiplied by a corresponding weight respectively, in the hope of a homographic solution, this weight with Wmp wherein m=1,2 ... M and p=1,2 ... P represents;
(f) in regular turn respectively under this P frequency, utilize least squares method to make each Electret Condencer Microphone unit be multiplied by the model that the signal of corresponding weight is tried to achieve in can corresponding step (c), and can try to achieve this weights W mp;
(g) make weights W m1, Wm2 that step (f) tries to achieve ...., Wmp is the frequency response of m digital filter;
(h) determine the sound frequency range that a desire is handled, and try to achieve the transfer function of an analog filter, make that the frequency response of the digital filter that step (g) is tried to achieve is approximate with the desire processing frequency range place of the frequency response that changes analog filter into; And
(i) utilize the transfer function of this analog filter of Biquad breadboardin.
14. the micro electronmechanical Electret Condencer Microphone of array as claimed in claim 13, it is characterized in that: this signal amplifier analogue unit is to be connected in series mutually with this filter analogue unit, and add up this M Electret Condencer Microphone unit output signal through this analog filter, and can make the micro electronmechanical Electret Condencer Microphone of this array produce high directivity, and improve signal to noise ratio simultaneously.
15. the micro electronmechanical Electret Condencer Microphone of array as claimed in claim 1, it is characterized in that: this micro electro mechanical system (MEMS) technology is to make with the semiconductor processing procedure, and be material with silicon and siliceous compound, and the accuracy of this capacitive microphone device is to be unit with the micron.
16. the micro electronmechanical Electret Condencer Microphone of array as claimed in claim 15 is characterized in that: this manufacture of semiconductor is to comprise a film growth time processing procedure, a little shadow cover curtain time processing procedure, and an etching moulding time processing procedure.
17. the micro electronmechanical Electret Condencer Microphone of array as claimed in claim 15 is characterized in that: this micro electro mechanical system (MEMS) technology also comprises a Precision Machining time technology and the little processing of a silicon time technology.
18. the micro electronmechanical Electret Condencer Microphone of array as claimed in claim 17 is characterized in that: the little processing of this silicon time technology comprises one-piece type little procedure for processing, the little procedure for processing of type, and a micro-lithography electroforming modeling processing procedure.
19. the micro electronmechanical Electret Condencer Microphone of array as claimed in claim 18 is characterized in that: the little procedure for processing of this build is to carry out etching cutting time processing procedure with a silicon wafer.
20. the micro electronmechanical Electret Condencer Microphone of array as claimed in claim 18 is characterized in that: the little procedure for processing of this face type is to comprise an evaporation time processing procedure, a sputter time processing procedure, and a chemical deposition time processing procedure.
21. the micro electronmechanical Electret Condencer Microphone of array as claimed in claim 18 is characterized in that: this micro-lithography electroforming modeling processing procedure comprises and carries out a photoetch time processing procedure.
22. the micro electronmechanical Electret Condencer Microphone of array as claimed in claim 1, it is characterized in that: also comprise a field-effect transistor, be placed in this accommodation space and with this capacitive microphone device electrically connect, the electric capacity of this capacitive microphone device can be changed and convert an electronic signal to and send out.
23. the micro electronmechanical Electret Condencer Microphone of array as claimed in claim 1 is characterized in that: this Electret Condencer Microphone unit is to be formed on this base material with an array.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102301741A (en) * | 2009-02-02 | 2011-12-28 | 罗伯特·博世有限公司 | Microphone component and method for operating a component of this type |
| CN101437188B (en) * | 2007-10-01 | 2012-08-29 | 财团法人工业技术研究院 | Acoustic transducer and microphone using the same |
| CN103155032A (en) * | 2010-08-27 | 2013-06-12 | 诺基亚公司 | A microphone apparatus and method for removing unwanted sounds |
| CN110401897A (en) * | 2018-04-24 | 2019-11-01 | 矽统科技股份有限公司 | Analog microphone and its control method |
| CN111095949A (en) * | 2017-09-18 | 2020-05-01 | 美商楼氏电子有限公司 | System and method for sound hole optimization |
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2003
- 2003-06-27 CN CNB031452906A patent/CN100553371C/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101437188B (en) * | 2007-10-01 | 2012-08-29 | 财团法人工业技术研究院 | Acoustic transducer and microphone using the same |
| CN102301741A (en) * | 2009-02-02 | 2011-12-28 | 罗伯特·博世有限公司 | Microphone component and method for operating a component of this type |
| CN102301741B (en) * | 2009-02-02 | 2014-04-23 | 罗伯特·博世有限公司 | Microphone component and method for operating a component of this type |
| US8861765B2 (en) | 2009-02-02 | 2014-10-14 | Robert Bosch Gmbh | Microphone component and method for operating same |
| CN103155032A (en) * | 2010-08-27 | 2013-06-12 | 诺基亚公司 | A microphone apparatus and method for removing unwanted sounds |
| CN103155032B (en) * | 2010-08-27 | 2016-10-19 | 诺基亚技术有限公司 | For removing microphone apparatus and the method for non-required sound |
| US9549252B2 (en) | 2010-08-27 | 2017-01-17 | Nokia Technologies Oy | Microphone apparatus and method for removing unwanted sounds |
| CN111095949A (en) * | 2017-09-18 | 2020-05-01 | 美商楼氏电子有限公司 | System and method for sound hole optimization |
| CN110401897A (en) * | 2018-04-24 | 2019-11-01 | 矽统科技股份有限公司 | Analog microphone and its control method |
| CN110401897B (en) * | 2018-04-24 | 2021-04-13 | 矽统科技股份有限公司 | Analog microphone and control method thereof |
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| Publication number | Publication date |
|---|---|
| CN100553371C (en) | 2009-10-21 |
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