Technical background
Current, an important development trend of direct-current switch power supply is to realize " light, thin, short, little " and high efficiency, and the core of direct-current switch power supply is power electronics DC/DC (DC-DC) switch converters.In various DC/DC switch converters, the input filter inductor is generally all arranged, output inductor device or energy-storage reactor, in order to transmit and store direct current power, generally all flow through bigger dc bias current in these inductors, cause producing in the iron core of these inductors bigger D.C. magnetic biasing, in order to prevent that D.C. magnetic biasing from causing the magnetic saturation of inductor iron core, in the iron circuit of these inductors, generally all open an air gap that is directly proportional with the size of dc bias current, the result makes that the utilance of inductor iron core is very low, inductance value reduces greatly, in order to remedy this loss of inductance value, people usually adopt the way (being unfavorable for very much reducing of inductor and Switching Power Supply volume) that increases inductor core volume or umber of turn, and the result makes the DC/DC switch converters be difficult to realize " light; thin; short; little "; In addition, because the operating frequency all very high (more than tens kHz) of these inductors, the inductor that makes these iron cores open air gap has produced bigger leakage electromagnetic field and high frequency radiation electromagnetic interference, leakage electromagnetic field causes the eddy current loss of inductor winding, makes the DC/DC switch converters be difficult to realize high efficiency; The high frequency radiation electromagnetic interference not only influences the operate as normal of converter circuit self, also can enter electrical network, pollutes electromagnetic environment, the normal operation that endangers other electronic equipments.Therefore, must take measures to eliminate D.C. magnetic biasing and air gap in these inductors.
In the past, people once added permanent magnetic material and eliminated D.C. magnetic biasing in iron circuit, but owing to cost, loss and the air gap of permanent magnet causes reasons such as inductance value reduction, made this way unworkable.
Another trial is to adopt special transformer configuration to reduce or eliminate D.C. magnetic biasing.As United States Patent (USP) " compensate for electronic the power inverter " (patent No.: US5,166,869) introduce in by " compensator transformer ", this compensator transformer is combined into a coupling inductance to input inductance and outputting inductance, direct current flux in its input inductance is output the direct current flux that inductance produces and eliminates, its major defect is to eliminate D.C. magnetic biasing under a certain fixing input/output voltage no-load voltage ratio, this no-load voltage ratio is determined by the securing loop ratio of these two windings, and can not under variable input/output voltage no-load voltage ratio, eliminate D.C. magnetic biasing, promptly can not all eliminate D.C. magnetic biasing when any duty ratio by the pulse-width modulation method.Note the different of coupling inductance and transformer device structure: in coupling inductance, when the transient current of input inductance flowed into end of the same name, the transient current of outputting inductance also flowed into end of the same name, and in AC transformer, output current is to flow out end of the same name.The major advantage of coupling inductance is to reduce the output ripple electric current, even can realize exporting zero ripple current.
U.S. Pat 6,400,579 (authorize day: 2002.10.9) be winding added in the Cuk converter in the middle of, input and output inductance winding in winding in the middle of this and the Cuk converter is integrated on the iron core, can when any duty ratio, eliminates the D.C. magnetic biasing in the iron core, make iron core need not open air gap, the inventor is called commutator transformer, the result reduces the volume and weight of converter, and efficient improves, and has high overload capacity (be nominal load current more than 20 times).The shortcoming of this integrated magnetics and circuit structure is the circuit complexity, self-turn-off device many (four), winding (causing the winding resistance loss) in the middle of additionally having added one, and only be applicable to this a kind of converter of Cuk converter, and can not be applicable to various DC/DC converters at present commonly used (as Buck, Boost, Buck/Boost, Zeta, Sepic, normal shock, instead swash or the like).
Summary of the invention
The present invention presses above technical deficiency in order to overcome, and provides a kind of and implement conveniently, can eliminate when any duty ratio the DC/DC switch converters of D.C. magnetic biasing and air gap in filter inductor and the energy-storage reactor.The volume of converter is reduced, weight saving, and the dynamic responding speed of converter is accelerated greatly, the output ripple electric current reduces, overload capacity strengthens, and the eddy current loss of inductor winding reduces greatly, and the electromagnetic interference of generation reduces greatly, current stress reduces, for " light, thin, short, little " and the high efficiency that realizes Switching Power Supply provides the theory and technology support.Simultaneously, this DC/DC converter also is highly suitable for the switch converters of low-voltage and high-current output, and goes for comprising the DC/DC converter aforesaid various commonly used of Cuk converter.
The technical solution adopted for the present invention to solve the technical problems is: will adopt the DC/DC converter of non DC bias integrated magnetics to carry out two-way parallel connection (or multi-channel parallel), inductor L1 on these two parallel branches and L2 are integrated on the iron core, form the integrated magnetics IM1 of a non DC bias, allow the winding current on the parallel branch flow into end of the same name, allow the winding current on another parallel branch flow out end of the same name, the switching frequency of these two branch roads is identical, the duty ratio of working pulse is identical, conducting differs constantly within one-period, when the switch conduction of a branch road wherein, when passing inductance winding by this branch road of the power come by DC power supply, then make power be directly passed to load by the inductance winding of another branch road by magnetic-coupled mode, simultaneously, flow through the equal and opposite in direction of the D.C. magnetic biasing that the electric current of two windings produces in iron core, direction is opposite, eliminates mutually, need not open air gap in the iron core; Current ripples on each bar parallel branch is suppressed by the winding leakage inductance among the non DC bias integrated magnetics IM1, when making non DC bias integrated magnetics IM1, satisfies different current ripples requirements by the size of adjusting leakage inductance.Winding is imported, exported to two windings of non DC bias integrated magnetics IM1 each other, and the number of turn of two winding is all identical with diameter of wire.The structure of non DC bias integrated magnetics IM1 comprises: E shape iron core 1, and 2 have air gap on unshakable in one's determination 1 the center pillar, are wound with two inductance winding L 1 and L2 on two lateral columns 3,4 of unshakable in one's determination 1, and the direction of the direct current flux that they produce in unshakable in one's determination 1 is opposite.If two such non DC bias integrated magnetics IM1 and IM2 are arranged in the DC/DC converter, just IM1 and IM2 further are integrated on the iron core 1, become a non DC bias integrated magnetics IM3.
Perhaps input filter inductance in the Buck converter and output inductor being formed aforesaid integrated magnetics, also is the direct transmission of carrying out direct current power, thereby eliminates the D.C. magnetic biasing in the iron core, makes iron core need not open air gap.
The invention has the beneficial effects as follows: since the DC/DC converter using integrated magnetics structure of foregoing circuit structure and non DC bias, not only when any duty ratio, can eliminate the D.C. magnetic biasing in the inductor iron core, make iron core need not open air gap, the volume of converter is reduced, weight saving, highly reduce; And the dynamic responding speed of converter is accelerated greatly, input, output ripple electric current reduce, overload capacity strengthens, the eddy current loss of inductor winding reduces greatly, the electromagnetic interference that produces reduces greatly, current stress reduces, thereby is that " light, thin, short, little " and the high efficiency that realizes Switching Power Supply provides the theory and technology support.Simultaneously, the circuit structure of this DC/DC converter and the integrated magnetics of non DC bias thereof also are highly suitable for the switch converters of low-voltage and high-current output, and go for comprising the DC/DC converter aforesaid various commonly used of Cuk converter.
Description of drawings
Specify with embodiment below in conjunction with accompanying drawing.
Fig. 1 shows the DC/DC Switching Converter Topologies topological structure schematic diagram that adopts the non DC bias integrated magnetics.
The Buck type DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment two of Fig. 2 diagrammatic sketch 1.
The Boost type DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment three of Fig. 3 diagrammatic sketch 1.
The Buck/Boost type DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment four of Fig. 4 diagrammatic sketch 1.
The Cuk type DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment five of Fig. 5 diagrammatic sketch 1.
The Cuk type DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment six of Fig. 6 diagrammatic sketch 1.
The Zeta type DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment seven of Fig. 7 diagrammatic sketch 1.
The Zeta type DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment eight of Fig. 8 diagrammatic sketch 1.
The Sepic type DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment nine of Fig. 9 diagrammatic sketch 1.
The Sepic type DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment ten of Figure 10 diagrammatic sketch 1.
Forward (normal shock) the type DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment 11 of Figure 11 diagrammatic sketch 1.
Forward (normal shock) the type DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment 12 of Figure 12 diagrammatic sketch 1.
Forward (normal shock) the type DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment 13 of Figure 13 diagrammatic sketch 1.
Forward (normal shock) the type DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment 14 of Figure 14 diagrammatic sketch 1.
Forward (normal shock) the type DC/DC Switching Converter Topologies topological structure schematic diagram of the embodiment 15 of Figure 15 diagrammatic sketch 1.
The structure of non DC bias integrated magnetics IM2 among the structure of non DC bias integrated magnetics IM1 and the embodiment five, seven, nine among the embodiment one, two, three, four, five, seven, nine of Figure 16 diagrammatic sketch 1,11,13,14,15.
The structure of non DC bias integrated magnetics IM3 among the embodiment six, eight, ten of Figure 17 diagrammatic sketch 1.
Among the figure, the 1-iron core; 2-center pillar unshakable in one's determination; 3,4-lateral column unshakable in one's determination; L1~L4-inductor; S1, S2-gate-controlled switch device; D1~D6-diode; C, C1, C2-electric capacity; IM1~IM8-non DC bias integrated magnetics; The Vg-DC power supply; The R-load; T1, T2-transformer
Embodiment
Embodiment one, with reference to accompanying drawing 1, a kind of DC/DC switch converters that adopts the non DC bias integrated magnetics, comprise a non DC bias integrated magnetics IM1 who forms by inductor L1 and L2, two gate-controlled switch device S1 and S2, (D1 and D2 also can adopt the gate-controlled switch device for two diode D1 and D2, as when realizing synchronous rectification), capacitor C, DC power supply Vg, and load R.The characteristics of this reconfiguration device are to realize two-way (or multichannel) parallel connection, form a non DC bias integrated magnetics IM1 by inductor L1 and L2, pp end and the sp end of IM1 are end of the same name, pm end and sm end are end of the same name, above the electric current of a branch road flow into from pp end, flow out from pm end, below the electric current of a branch road flow into from the sm end, flow out from the sp end; The switching frequency of gate-controlled switch device S1 and S2 is identical, and duty ratio is identical, and conducting differs constantly within one-period; The negative electrode of the pp terminating diode D1 of the inductance L 1 of non DC bias integrated magnetics IM1 and the source electrode of switching device S1 are (when S1 adopts power MOFET, down together), the plus earth of D1, the drain electrode of S1 connects the positive pole of DC power supply Vg, the sp end of the pm termination L2 of L1, the positive pole of capacitor C and the end of load R, the other end ground connection of the negative pole of C and R, the negative electrode of the sm termination D2 of the inductance L 2 of IM1 and the source electrode of S2 are (when S2 adopts power MOFET, down together), the plus earth of D2, the drain electrode of S2 connects the positive pole of DC power supply Vg, the minus earth of Vg.The iron core 1 of integrated magnetics IM1 can adopt different shapes such as annular, U-shaped, plane U type, E shape, plane E shape, and core material can adopt various ferromagnetic materials such as ferrite, metal magnetic powder core, permalloy, amorphous, ultracrystallite; The inductance L 1 of integrated magnetics IM1 and the winding coil of L2 can adopt round copper conductor, Copper Foil or printed circuit board (PCB) etc., generally with the number of turn of these two two coils and cross-sectional area of conductor long-pending be arranged to identical; The structure of integrated magnetics IM1 can adopt structure as shown in figure 16, is not only limited to this structure certainly, and it is in order to increase the leakage inductance of two windings that the center pillar 2 of a band air gap is arranged in the iron core 1.Two gate-controlled switch device S1 and S2 can adopt various semiconductor switch devices such as power MOSFET, IGBT, GTR, GTO, SCR, IGCT, BCT, when diode D1 and D2 employing gate-controlled switch device, also can adopt the semiconductor switch device of these kinds.
Embodiment two, with reference to accompanying drawing 2, a kind of employing can be eliminated the Buck type DC/DC switch converters of D.C. magnetic biasing integrated magnetics, the integrated magnetics IM1 that comprises the D.C. magnetic biasing eliminated of an input filter inductance L1 and an output inductor L2 composition, a gate-controlled switch device S1, (D also can adopt the gate-controlled switch device to a diode D1, as when realizing synchronous rectification), capacitor C, DC power supply Vg, and load R.The characteristics of the converter of this structure are formed an integrated magnetics IM1 that can eliminate D.C. magnetic biasing by input inductance L1 and outputting inductance L2, pp end and the sp end of IM1 are end of the same name, pm end and sm end are end of the same name, the electric current that flows through input inductance L1 flows into from the pp end, flow out from the sp end, the electric current that flows through outputting inductance L2 flows into from the sm end, flows out from the sp end; The positive pole of the pp termination Vg of the L1 of IM1, the drain electrode of the pm termination S1 of L1 and the positive pole of C1, the minus earth of C1, the positive pole of the sp termination C of the L2 of IM1 and the end of R, the other end ground connection of the negative pole of C and R, the source electrode of the sm termination S1 of L2 and the negative electrode of D1, the plus earth of D1.The iron core that integrated magnetics IM1 adopts is with embodiment one; The inductance L 1 of integrated magnetics IM1 and the winding coil of L2 can adopt round copper conductor, Copper Foil or printed circuit board (PCB) etc.; The structure of integrated magnetics IM1 adopts structure as shown in figure 16, is not only limited to this structure certainly, and it is in order to increase the leakage inductance of two windings that the center pillar 2 of a band air gap is arranged in the iron core 1.The switching device that gate-controlled switch device S1 and diode D1 adopt is with embodiment one.
Embodiment three, with reference to accompanying drawing 3, a kind of Boost type DC/DC switch converters in parallel that adopts the non DC bias integrated magnetics, comprise a non DC bias integrated magnetics IM1 who forms by inductor L1 and L2, two gate-controlled switch device S1 and S2, (D1 and D2 also can adopt the gate-controlled switch device for two diode D1 and D2, as when realizing synchronous rectification), capacitor C, DC power supply Vg, and load R.The characteristics of the converter of this structure are to realize two-way (or multichannel) parallel connection, form a non DC bias integrated magnetics IM1 by inductor L1 and L2, pp end and the sp end of IM1 are end of the same name, pm end and sm end are end of the same name, above the electric current of a branch road flow into from pp end, flow out from pm end, below the electric current of a branch road flow into from the sm end, flow out from the sp end; The switching frequency of gate-controlled switch device S1 and S2 is identical, and duty ratio is identical, and conducting differs constantly within one-period; The sm end of the pp termination L2 of the inductance L 1 of IM1 and the positive pole of Vg, the anode of the pm termination D1 of L1 and the drain electrode of S1, the negative electrode of D1 connects the negative electrode of D2, the positive pole of C and the end of R, the source ground of S1, the other end ground connection of the negative pole of C and R, the anode of the sp termination D2 of the inductance L 2 of IM1 and the drain electrode of S2, the source ground of S2.The iron core that integrated magnetics IM1 adopts is with embodiment one; The winding coil that the inductance L 1 of integrated magnetics IM1 and L2 adopt is with embodiment one; The structure of integrated magnetics IM1 can adopt structure as shown in figure 16, is not only limited to this structure certainly, and it is in order to increase the leakage inductance of two windings that the center pillar 2 of a band air gap is arranged in the iron core 1.The switching device that gate-controlled switch device S1 and S2 and diode D1 and D2 adopt is with embodiment one.
Embodiment four, with reference to accompanying drawing 4, a kind of Buck/Boost type DC/DC switch converters in parallel that adopts the non DC bias integrated magnetics, comprise a non DC bias integrated magnetics IM1 who forms by inductor L1 and L2, two gate-controlled switch device S1 and S2, (D1 and D2 also can adopt the gate-controlled switch device for two diode D1 and D2, as when realizing synchronous rectification), capacitor C 1, DC power supply Vg, and load R.The characteristics of the converter of this structure are to realize two-way (or multichannel) parallel connection, form a non DC bias integrated magnetics IM1 by inductor L1 and L2, pp end and the sp end of IM1 are end of the same name, pm end and sm end are end of the same name, above the electric current of a branch road flow into from pp end, flow out from pm end, below the electric current of a branch road flow into from the sm end, flow out from the sp end; The switching frequency of gate-controlled switch device S1 and S2 is identical, and duty ratio is identical, but conducting differs constantly within one-period; The source electrode of the pp termination S1 of the inductance L 1 of IM1 and the negative electrode of D1, the drain electrode of S1 connects the drain electrode of S2 and the positive pole of Vg, the sp end of the pm termination L2 of L1 and the negative pole of Vg, the source electrode of the sm termination S2 of the L2 of IM1 and the negative electrode of D2; The anode of D1 connects the anode of D2, the negative pole of C and the end of R, the negative pole of another termination Vg of the positive pole of C and R.The iron core that integrated magnetics IM adopts is with embodiment one; The winding coil that the inductance L 1 of integrated magnetics IM1 and L2 adopt is with embodiment one; The structure of integrated magnetics IM1 can adopt structure as shown in figure 16, is not only limited to this structure certainly, and it is in order to increase the leakage inductance of two windings that the center pillar 2 of a band air gap is arranged in the iron core 1.The switching device that gate-controlled switch device S1 and S2 and diode D1 and D2 adopt is with embodiment one.
Embodiment five, with reference to accompanying drawing 5, a kind of Cuk type DC/DC switch converters in parallel that adopts the non DC bias integrated magnetics comprises a non DC bias integrated magnetics IM1 who is made up of input inductor L1 and L2, a non DC bias integrated magnetics IM2 who is made up of output inductor L3 and L4, two gate-controlled switch device S1 and S2, two diode D1 and D2 when realizing synchronous rectification (D1 and D2 also can adopt the gate-controlled switch device, as), capacitor C, C1 and C2, DC power supply Vg, and load R.The characteristics of the converter of this structure are to realize two-way (or multichannel) parallel connection, form a non DC bias integrated magnetics IM1 by input inductor L1 and L2, pp end and the sp end of IM1 are end of the same name, pm end and sm end are end of the same name, above the input current of a branch road flow into from pp end, flow out from pm end, below the input current of a branch road flow into from the sm end, flow out from the sp end; Form a non DC bias integrated magnetics IM2 by output inductor L3 and L4, pp end and the sp end of IM2 are end of the same name, pm end and sm end are end of the same name, above the output current of a branch road flow into from pp end, flow out from the pm end, below the output current of a branch road flow into from sm end, flow out from the sp end; The switching frequency of gate-controlled switch device S1 and S2 is identical, and duty ratio is identical, and conducting differs constantly within one-period; The sm end of the pp termination L2 of the L1 of IM1 and the positive pole of Vg, the drain electrode of the pm termination S1 of L1 and the positive pole of C1, the source electrode of S1 connects the negative pole of Vg and the negative electrode of D1, the negative pole of C1 connects the pp end of the L3 of the anode of D1 and IM2, the drain electrode of the sp termination S2 of the L2 of IM1 and the positive pole of C2, the source electrode of S2 connects the negative pole of Vg and the negative electrode of D2, and the negative pole of C2 connects the sm end of the L4 of the anode of D2 and IM2; The sp end of the pm termination L4 of the L3 of IM2, the negative pole of C and the end of R, the negative pole of another termination Vg of the positive pole of C and R.The iron core that integrated magnetics IM1 and IM2 adopt is with embodiment one; The winding coil that the inductance L 3 of the inductance L 1 of integrated magnetics IM1, L2 and integrated magnetics IM2, L4 adopt is with embodiment one, the structure of integrated magnetics IM1 and IM2 can adopt structure as shown in figure 16, certainly be not only limited to this structure, it is in order to increase the leakage inductance of two windings that the center pillar 2 of a band air gap is arranged in the iron core 1.The switching device that gate-controlled switch device S1 and S2 and diode D1 and D2 adopt is with embodiment one.
Embodiment six, with reference to accompanying drawing 6, a kind of Cuk type DC/DC switch converters in parallel that adopts the non DC bias integrated magnetics, its connected mode is with embodiment five, and this converter and embodiment five unique difference structurally is non DC bias integrated magnetics IM1 and IM2 further are integrated into a new non DC bias integrated magnetics IM3.The structure of non DC bias integrated magnetics IM3 can adopt structure as shown in figure 17, is not only limited to this structure certainly, and it is in order to increase the leakage inductance of two windings that the center pillar 2 of a band air gap is arranged in the iron core 1.
Embodiment seven, with reference to accompanying drawing 7, a kind of Zeta type DC/DC switch converters in parallel that adopts the non DC bias integrated magnetics comprises a non DC bias integrated magnetics IM1 who is made up of inductor L1 and L2, a non DC bias integrated magnetics IM2 who is made up of inductor L3 and L4, two gate-controlled switch device S1 and S2, two diode D1 and D2 when realizing synchronous rectification (D1 and D2 also can adopt the gate-controlled switch device, as), capacitor C, C1 and C2, DC power supply Vg, and load R.The characteristics of the converter of this structure are to realize two-way (or multichannel) parallel connection, form a non DC bias integrated magnetics IM1 by inductor L1 and L2, pp end and the sp end of IM1 are end of the same name, pm end and sm end are end of the same name, above the input current of a branch road flow into from pp end, flow out from pm end, below the input current of a branch road flow into from the sm end, flow out from the sp end; Inductor L3 and L4 form a non DC bias integrated magnetics IM2, and pp end and the sp end of IM2 are end of the same name, and pm end and sm end are end of the same name, above the output current of a branch road flow into from pp end, flow out from pm end, below the output current of a branch road flow into from the sm end, flow out from the sp end; The switching frequency of gate-controlled switch device S1 and S2 is identical, and duty ratio is identical, and conducting differs constantly within one-period; The source electrode of the pp termination S1 of the L1 of IM1 and the positive pole of C1, the drain electrode of S1 connects the drain electrode of positive pole and the S2 of Vg, the pm end ground connection of L1, the source electrode of the sm termination S2 of the L2 of IM1 and the positive pole of C2, the anode of the sp termination D1 of L2 and ground, the negative pole of the pp termination C1 of the L3 of IM2 and the negative electrode of D1, the sp end of the pm termination L4 of L3, the positive pole of C and the end of R, the other end ground connection of the negative pole of C and R, the negative pole of the sm termination C2 of L4 and the negative electrode of D2, the plus earth of D2.The iron core 1 that integrated magnetics IM1 and IM2 adopt is with embodiment one; The winding coil that integrated magnetics IM1 and IM2 adopt is with embodiment one; The structure of integrated magnetics IM1 and IM2 can adopt structure as shown in figure 16.The switching device that gate-controlled switch device S1 and S2 and diode D1 and D2 adopt is with embodiment one.
Embodiment eight, with reference to accompanying drawing 8, a kind of Zeta type DC/DC switch converters in parallel that adopts the non DC bias integrated magnetics, its connected mode is with embodiment seven, and this converter and embodiment seven unique difference structurally is non DC bias integrated magnetics IM1 and IM2 further are integrated into a new non DC bias integrated magnetics IM3.The structure of integrated magnetics IM3 can adopt structure as shown in figure 17, is not only limited to this structure certainly.
Embodiment nine, with reference to accompanying drawing 9, a kind of Sepic type DC/DC switch converters in parallel that adopts the non DC bias integrated magnetics comprises a non DC bias integrated magnetics IM1 who is made up of inductor L1 and L2, a non DC bias integrated magnetics IM2 who is made up of inductor L3 and L4, two gate-controlled switch device S1 and S2, two diode D1 and D2 when realizing synchronous rectification (D1 and D2 also can adopt the gate-controlled switch device, as), capacitor C, C1 and C2, DC power supply Vg, and load R.The characteristics of the converter of this structure are to realize two-way (or multichannel) parallel connection, form a non DC bias integrated magnetics IM1 by inductor L1 and L2, pp end and the sp end of IM1 are end of the same name, pm end and sm end are end of the same name, above the input current of a branch road flow into from pp end, flow out from pm end, below the input current of a branch road flow into from the sm end, flow out from the sp end; Form a non DC bias integrated magnetics IM2 by inductor L3 and L4, pp end and the sp end of IM2 are end of the same name, and pm end and sm end are end of the same name, above the output current of a branch road flow into from pp end, flow out from pm end, below the output current of a branch road flow into from the sm end, flow out from the sp end; The switching frequency of gate-controlled switch device S1 and S2 is identical, and duty ratio is identical, and conducting differs constantly within one-period; The sm end of the pp termination L2 of the L1 of IM1 and the positive pole of Vg, the drain electrode of the pm termination S1 of L1 and the positive pole of C1, the source ground of S1, the drain electrode of the sp termination S2 of L2 and the positive pole of C2, the source ground of S2, the negative pole of the pp termination C1 of the L3 of IM2 and the anode of D1, the pm end ground connection of L3, the negative pole of the sm termination C2 of L4 and the anode of D2, the sp end ground connection of L4, the negative electrode of D2 connects the negative electrode of D1, the positive pole of C and the end of R, the other end ground connection of the negative pole of C and R.The iron core that integrated magnetics IM1 and IM2 adopt is with embodiment one; The winding coil that integrated magnetics IM1 and IM2 adopt is with embodiment one; The structure of integrated magnetics IM1 and IM2 can adopt structure as shown in figure 16.The switching device that gate-controlled switch device S1 and S2 and diode D1 and D2 adopt is with embodiment one.
Embodiment ten, with reference to accompanying drawing 10, a kind of Sepic type DC/DC switch converters in parallel that adopts the non DC bias integrated magnetics, its connected mode is with embodiment nine, and this converter and embodiment nine unique difference structurally is non DC bias integrated magnetics IM1 and IM2 further are integrated into a new non DC bias integrated magnetics IM3.The structure of non DC bias integrated magnetics IM3 can adopt structure as shown in figure 17, is not only limited to this structure certainly.
Embodiment 11, with reference to accompanying drawing 11, a kind of Forward in parallel (normal shock) type DC/DC switch converters that adopts the non DC bias integrated magnetics, comprise a non DC bias integrated magnetics IM4 who forms by transformer T1 and T2, a non DC bias integrated magnetics IM1 who forms by inductor L1 and L2, two gate-controlled switch device S1 and S2, (D1, D2, D3 and D4 also can adopt the gate-controlled switch device for four diode D1, D2, D3 and D4, as when realizing synchronous rectification), capacitor C, DC power supply Vg, and load R.The characteristics of the converter of this structure are to realize two-way (or multichannel) parallel connection, form a non DC bias integrated magnetics IM4 by transformer T1 and T2, the pp1 end of IM4, sp1 end, pp2 end and sp2 end are end of the same name, and pm1 end, sm1 end, pm2 end and sm2 end are end of the same name; Form a non DC bias integrated magnetics IM1 by inductor L1 and L2, pp end and the sp end of IM1 are end of the same name, and pm end and sm end are end of the same name, above the output current of a branch road flow into from pp end, flow out from pm end, below the output current of a branch road flow into from the sm end, flow out from the sp end; The switching frequency of gate-controlled switch device S1 and S2 is identical, and duty ratio is identical, and conducting differs constantly within one-period; The drain electrode of the pp1 termination S1 of IM4, the source electrode of S1 connects the source electrode of S2, negative pole and the ground of Vg, the positive pole of pm1 termination pp2 end and Vg, the drain electrode of pm2 termination S2, the anode of sp1 termination D1, the anode of sm1 termination sp2 end, D2, the anode of D4 and ground, the anode of sm2 termination D3, the negative electrode of the pp termination D1 of the L1 of IM1 and the negative electrode of D2, pm termination sp end, the positive pole of C and the end of R, the negative electrode of sm termination D3 and the negative electrode of D4, the other end ground connection of the negative pole of C and R.The iron core 1 that integrated magnetics IM4 and IM1 adopt is with embodiment one; The winding coil that integrated magnetics IM4 and IM1 adopt is with embodiment one.The switching device that gate-controlled switch device S1 and S2 and diode D1, D2, D3 and D4 adopt is with embodiment one.Inductor L1 and L2 can be not integrated yet in the present embodiment.
Embodiment 12, with reference to accompanying drawing 12, a kind of Forward in parallel (normal shock) type DC/DC switch converters that adopts the non DC bias integrated magnetics, its connected mode is with embodiment 11, and this converter and embodiment 11 unique difference structurally is integrated magnetics IM4 and IM1 further are integrated into a new non DC bias integrated magnetics IM5.
Embodiment 13, with reference to accompanying drawing 13, a kind of Forward in parallel (normal shock) type DC/DC switch converters that adopts the non DC bias integrated magnetics, this converter and embodiment hendecyl are originally identical, its structural difference is the integrated magnetics IM4 among the embodiment 11 is removed a winding, form a new non DC bias integrated magnetics IM6, remove a gate-controlled switch device simultaneously.Also IM6 and IM1 further can be integrated into the magnetic spare IM7 of a non DC bias.
Embodiment 14, with reference to accompanying drawing 14, a kind of Forward in parallel (normal shock) type DC/DC switch converters that adopts the non DC bias integrated magnetics, its connected mode is with embodiment 11, and this converter and embodiment 11 difference structurally are non DC bias integrated magnetics IM4 is divided into two independently transformer T1 and T2.
Embodiment 15, with reference to accompanying drawing 15, a kind of Forward in parallel (normal shock) type DC/DC switch interchanger that adopts the non DC bias integrated magnetics, its connected mode and embodiment hendecyl are originally identical, this converter and embodiment 11 difference structurally are that integrated magnetics IM4 is removed a winding forms transformer T1, input side at T1 increases by two diode D5 and D6 simultaneously, and gate-controlled switch device S1 and S2 be turn-on and turn-off simultaneously.Its connected mode is: the source electrode of the p1 termination S1 of transformer T1 and the negative electrode of D6, and the drain electrode of m1 termination S2 and the anode of D5, the drain electrode of S1 and the negative electrode of D5 connect the positive pole of Vg, and the source electrode of S2 and the anode of D6 connect negative pole and the ground of Vg; The anode of the p2 termination D1 of T1, the anode of m2 termination p3 end, D2, the anode of D4 and ground, the anode of m3 termination D3; The negative electrode of the pp termination D1 of the L1 of IM1 and the negative electrode of D2, the sp end of pm termination L2, the positive pole of C and the end of R, the negative electrode of the sm termination D3 of L2 and the negative electrode of D4; The other end ground connection of the negative pole of C and R.Perhaps T1 and IM1 are integrated into the magnetic spare IM8 of a non DC bias.