CN1549302A - Bonding method for semiconductor micro-device and method for detecting bonded strength thereof - Google Patents

Abstract

The present invention discloses a bonding method for semiconductor microdevice and detection method of its bonded strength. Said bonding method includes the following steps: (1) designing and preparing the bonding face membrane layer structure of silicon structure sheet required for making bonding treatment; (2) necessary interface treatment; (3). making bonding alignment between bonding faces; and (4). implementing bonding process. Said invention also provides two methods for detecting bonded strength, they are arm-pressing method and opening type testing method respectively.

Description

A kind of bonding method of semiconductor micro device and the detection method of bond strength thereof

Technical field

The present invention relates to the detection method of the bonding method and the bond strength thereof of semiconductor micro device.

Background technology

Bonding and encapsulation are the important component parts in semiconductor micro device (comprising various functional chips, transducer and other microelectronic component) preparation process.Studies show that, its cost often account for entire device, chip 70% or more than.At present, the bonding techniques in the semiconductor micro device mainly comprises Si-Si bonding, Si-Glass bonding and flip chip bonding Flip Chip etc.Wherein Si-Si bonding precision is the highest, but employed temperature is also the highest, about 1000 ℃, has brought inconvenience to bonding; The temperature of Si-Glass bonding is lower, and about 400 ℃, but precision is lower, and must add high voltage, and is influential to electrode in the device or circuit; Flip chip bonding Flip Chip equally also is that precision is lower, and needs to add more scolder.

Summary of the invention

It is higher to the purpose of this invention is to provide a kind of precision, lower-cost semiconductor micro device bonding method.

A kind of bonding method of semiconductor micro device may further comprise the steps:

1) design and preparation need the bonding face film layer structure of the silicon structure sheet of bonding;

2) Bi Yao interface processing;

3) bonding that carries out between bonding face is aimed at;

4) implement bonding.

Described film layer structure is selected from following four kinds of pairing face textural associations:

Silicon substrate-SiO ₂/ Cr/Au and silicon Si

Silicon substrate-SiO ₂/ Cr/Au and matrix-SiO ₂/ Cr

Silicon substrate-SiO ₂/ Cr/Au/Poly-Si/Au and silicon Si

Silicon substrate-SiO ₂/ Cr/Au/Poly-Si/Au and matrix-SiO ₂/ Cr

Wherein, the Poly-Si polysilicon is by sputter, peels off and annealing process makes.

More accurate in order to operate, before carrying out described design and preparation and needing the bonding face film layer structure of silicon structure sheet of bonding, to needing the silicon structure sheet number of writing of bonding.

In order to make bonding more firm, before the bonding aligning that carries out between described bonding face, the bonding face of silicon structure sheet is carried out the cleaning of necessity.Especially to long silicon structure sheet standing time, must clean through following strict process:

1) at NH ₄OH: H ₂O=1: rinsing was used deionized water rinsing after 20～40 minutes in 8～12 the solution;

2) at 0.05～0.07M H ₂SO ₄After soaking 10～30 minutes in the solution, use deionized water rinsing;

3) be to get rid of 3～5 minutes on 1500～2500 rev/mins of driers at rotating speed.

The technological parameter of described bonding is:

Base vacuum: be lower than 0.3Pa

Bonding temperature: 365～480 ℃;

The bonding time: 10～50 minutes;

Nitrogen operating pressure: 10 ⁵Pa;

Bonding is exerted pressure: 2 * 10 ⁵Pa.

Should carry out the detection of bond strength behind the bonding.Arm-pressing method or opening type testing method respectively are adopted in the detection of bond strength.

Second purpose of the present invention provides the method for convenient and practical detection semiconductor micro device bonding strength.

In order to achieve the above object, the invention provides two kinds of detection methods.

First kind of method that detects semiconductor micro device bonding strength is according to pressure arm model like formula (II) design one category:

$\frac{8a}{3}\≤l\≤\frac{50000}{a}----\left(\mathrm{II}\right)$

Measure when a certain length ι, the bonding face cracking can be calculated or bond strength relatively.

Wherein, formula (II) is by formula (I)

$\frac{4a^3\left[{\mathrm{\σ}}_2\right]-2\mathrm{Pa}}{3P}\≤l\≤\frac{{\mathrm{ah}}^2\left[{\mathrm{\σ}}_1\right]}{3P}----\left(I\right)$

Each relevant parameter of substitution is similar to (test model as shown in Figure 1) that obtains according to a series of designing and calculating.Thus, can determine the basic size of test pattern.Through estimation as can be known; The number range of required pressure P is at 0.5～1.5kg.

Second kind of method that detects semiconductor micro device bonding strength provided by the invention, model is at about 200 μ m corrosion depth places as shown in Figure 2, inserting thickness is the blade of 2h, the modulus of elasticity of silicon chip such as Si (100): E=1.66 * 10 ¹²Dy/cm ², measure blade to opening part apart from the S value, according to formula (III) calculating bond strength σ:

$\mathrm{\σ}=\frac{3E{m}^3{h}^2}{8S^4}----\left(\mathrm{III}\right)$

Semiconductor micro device bonding method of the present invention has following remarkable advantage:

1) bonding temperature is low: needed bonding temperature is low more than the Si-Si bonding; Approaching with the bonding temperature (about 400 ℃) of Si-Glass (glass), and must making alive.

2) the bonding property of eutectic liquid is good.

3) para-linkage rough interface degree is not very sensitive.

4) technology is simple, and cost is low: the sputter simultaneously when doing electrode or circuit of the Au rete of bonded interface makes, and the Si face can directly adopt the Si base.

5) the bonding precision is higher: its bonding precision is only second to the Si-Si bonding, and technology is simple more than it.

The present invention has been owing to adopted the measures such as clean, bonding technology parameter optimization of film layer structure, the bonding face of new bonding face, further stable and perfect technology, and set up two kinds of methods that detect the Au-Si bond strengths, convenient and practical.This technology can be widely used in the semiconductor micro device (comprising various functional chips, transducer and other microelectronic component) bonding or the encapsulation in, have very high practical value and market prospects.

Description of drawings

Fig. 1 is arm-pressing method test model and size indication

Fig. 2 is opening mode test model and size indication

Fig. 3 is the section structure of piezoresistive accelerometer

Fig. 4 is the cross-section morphology after the piezoresistive accelerometer bonding section

Embodiment

Embodiment 1, three layers of bonding of piezoresistive accelerometer

The section structure of piezoresistive accelerometer as shown in Figure 3.Its three-decker need fit together by bonding.Use 4 inch 525 thick n-(100) type silicon structure sheet of μ m, the intermediate layer is a twin polishing structure sheet.At first silicon chip is carried out conventional sour boiling procedure, be about to the mixed solution (H of silicon chip at sulfuric acid and hydrogen peroxide ₂SO ₄: H ₂O ₂=4: boiled (about 120 ℃) 1) 10 minutes, to remove the pollutant and the hydrocarbon of silicon chip surface.One surface sputtering of structure sheet the Cr layer of 200～500 and the Au layer of about 3000 , its structure is silicon substrate-SiO ₂/ Cr/Au, and another side is respectively pure silicon base (bonding is preceding through the rinsing of BHF solution, to remove natural oxidizing layer) and matrix-SiO ₂(natural oxidizing layer)/Cr (200 ).All silicon chips all must clean through strict process, secondly are the bonding face cleanings to the silicon structure sheet that carries out repeatedly little manufacturing procedure.Cleaning is: earlier at NH ₄OH: H ₂O=1: rinsing is 30 minutes in 12 the solution, at last at 0.06MH ₂SO ₄Soaking 20 minutes in the solution, is to get rid of 4 minutes on 2000 rev/mins of driers at rotating speed again.Each step in the cleaning process all must be used deionized water rinsing.

The bonding experiment is to carry out on the Suss SB6 VAC type bonding apparatus of Karlsuss company preparation and Suss BA6 type silicon/silicon and silicon/glass bonding aligning equipment.To go up paste earlier and on mask aligner, aim at, insert in the bonding machine, nearly 10 minutes of about 365 ℃ of following bondings with the intermediate structure sheet; Be aligned in about 365～480 ℃ of following bondings with the following paste that is left again got final product in nearly 30 minutes.The base vacuum degree 3 * 10 in bonding chamber ^-4Mbar, the nitrogen operating pressure is 1 atmospheric pressure.Bonding pressure is 2 atmospheric pressure.The time that temperature drops to room temperature behind the bonding is about 1 hour.

The bonding sample is cut into the individual devices unit, and cell size is 6.5 * 6.5mm.The sample that bonding is good has passed through the sword sheet and has inserted detection, and its bond strength is 238Mpa.Using light microscope or ESEM etc. to carry out micro-analysis detects.Cross-section morphology after its bonding section as shown in Figure 4.

In the present embodiment, surface layer can also adopt the structure on following three assembly opposites:

Silicon substrate-SiO ₂/ Cr (200 )/Au (3000 ) and matrix-SiO ₂/ Cr (200 )

Silicon substrate-SiO ₂/ Cr (200 )/Au (1000 )/Poly-Si (500 )/Au (1000 ) and silicon

Silicon substrate-SiO ₂/ Cr (200 )/Au (1000 )/Poly-Si (500 )/Au (1000 ) and matrix-SiO ₂/ Cr (200 )

The Poly-Si polysilicon by sputter, peel off and subsequent annealing technology makes.

Embodiment 2: arm-pressing method test bond strength

Arm-pressing method test bond strength, as shown in Figure 1:

According to a series of designing and calculating, can get the pressure arm length range:

$\frac{4a^3\left[{\mathrm{\σ}}_2\right]-2\mathrm{Pa}}{3P}\≤l\≤\frac{{\mathrm{ah}}^2\left[{\mathrm{\σ}}_1\right]}{3P}----\left(I\right)$

Each relevant parameter of substitution, can be similar to:

$\frac{8a}{3}\≤l\≤\frac{50000}{a}----\left(\mathrm{II}\right)$

Thus, can determine the basic size of test pattern.Through estimation as can be known; The number range of required pressure P is at 0.5～1.5kg.

By measure changing pressure arm length ι numerical value among the figure, design pressure arm model like the category, as long as measure when a certain length ι, the bonding face cracking can roughly be estimated or bond strength relatively.This method also can be used for the detection or the comparison of other bond strength.

The bond strength of just slightly estimating the three layers of bonding of piezoresistive accelerometer among the embodiment 1 by this detection model is 230～242Mpa.

Embodiment 3: opening mode test bond strength

Opening mode test bond strength, as shown in Figure 2.

Having certain corrosion depth (about 200 μ m) to locate, inserting thickness is the blade of 2h.The modulus of elasticity of known silicon chip such as Si (100): E=1.66 * 10 ¹²Dy/cm ², under microscope (light microscope or scanning electron microscopy), measure blade to opening part apart from the S value, according to formula calculating bond strength σ:

$\mathrm{\σ}=\frac{3E{m}^3{h}^2}{8S^4}----\left(\mathrm{III}\right)$

The bond strength that calculates the three layers of bonding of piezoresistive accelerometer among the embodiment 1 according to this method is 238Mpa.

Claims (10)

1, a kind of bonding method of semiconductor micro device may further comprise the steps:

1) design and preparation need the bonding face film layer structure of the silicon structure sheet of bonding;

2) Bi Yao interface processing;

3) bonding that carries out between bonding face is aimed at;

4) implement bonding.

2, method according to claim 1 is characterized in that: before carrying out described design and preparation and needing the bonding face film layer structure of silicon structure sheet of bonding, to needing the silicon structure sheet number of writing of bonding.

3, method according to claim 1 is characterized in that: carrying out before bonding between described bonding face aims at, the bonding face of silicon structure sheet is cleaned.

4, method according to claim 3 is characterized in that: described cleaning process may further comprise the steps:

1) at NH ₄OH: H ₂O=1: rinsing was used deionized water rinsing after 20～40 minutes in 8～12 the solution;

2) at 0.05～0.07M H ₂SO ₄After soaking 10～30 minutes in the solution, use deionized water rinsing;

3) be to get rid of 3～5 minutes on 1500～2500 rev/mins of driers at rotating speed.

5, method according to claim 1 is characterized in that: the laggard line unit of described bonding closes the detection of intensity.

6, according to claim 1 or 2 or 3 or 4 or 5 described methods, it is characterized in that: described film layer structure is selected from following four kinds of pairing face textural associations:

Silicon substrate-SiO ₂/ Cr/Au and silicon Si

Silicon substrate-SiO ₂/ Cr/Au and matrix-SiO ₂/ Cr

Silicon substrate-SiO ₂/ Cr/Au/Poly-Si/Au and silicon Si

Silicon substrate-SiO ₂/ Cr/Au/Poly-Si/Au and matrix-SiO ₂/ Cr

Described Poly-Si polysilicon by sputter, peel off and annealing process makes.

7, according to claim 1 or 2 or 3 or 4 described methods, it is characterized in that: the technological parameter of described bonding is:

Base vacuum: be lower than 0.3Pa

Bonding temperature: 365～480 ℃;

The bonding time: 10～50 minutes;

Nitrogen operating pressure: 105Pa

Bonding is exerted pressure: 2 * 10 ⁵Pa

8, according to claim 1 or 2 or 3 or 4 described methods, it is characterized in that: arm-pressing method or opening type testing method respectively are adopted in the detection of described bond strength.

9, a kind of method that detects semiconductor micro device bonding strength is according to pressure arm model like formula (II) design one category:

$\frac{8a}{3}\≤l\≤\frac{50000}{a}---\left(\mathrm{II}\right)$

Measure when a certain length l, the bonding face cracking can be calculated or the comparison bond strength.

10, a kind of method that detects semiconductor micro device bonding strength is at about 200 μ m corrosion depth places, and inserting thickness is the blade of 2h, the modulus of elasticity of silicon chip such as Si (100): E=1.66 * 10 ¹²Dy/cm ², measure blade to opening part apart from the S value, according to formula (III) calculating bond strength σ:

$\mathrm{\σ}=\frac{3{\mathrm{Em}}^3{h}^2}{{8S}^4}---\left(\mathrm{III}\right)$