CN1542444A - Gas sensor array for detecting indoor gas pollution - Google Patents
Gas sensor array for detecting indoor gas pollution Download PDFInfo
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- CN1542444A CN1542444A CNA2003101084699A CN200310108469A CN1542444A CN 1542444 A CN1542444 A CN 1542444A CN A2003101084699 A CNA2003101084699 A CN A2003101084699A CN 200310108469 A CN200310108469 A CN 200310108469A CN 1542444 A CN1542444 A CN 1542444A
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- gas sensor
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Abstract
The gas sensor array for detecting indoor gaseous pollutant consists of several In-Sn oxide film gas sensors with different In/Sn atom ratio within 0-1.0. The sensors with different In/Sn atom ratio have different response to gases, so that the gas sensor array has greatly raised gas selectivity and may be used in identifying benzene, toluene, xylene, formaldehyde and other common indoor pollutant gases.
Description
Technical field
The present invention relates to detect the gas sensor and the array of indoor harmful gas.
Background technology
Tin oxide is a kind of broad-spectrum semiconductor material, is obtaining more application aspect gas sensor, nesa coating etc. and other photoelectric devices.The gas sensor that uses uses tin ash as sensitive material mostly at present, but exists selectivity not high, and problems such as false alarm take place easily.According to retrieval, also find no the report that constitutes gas sensor array with the indium and tin oxide film gas sensor of a plurality of different indium tin ratios.
Summary of the invention
The gas sensor array that the purpose of this invention is to provide several gaseous contaminations in a kind of selectivity height, the energy sensing chamber.
The gas sensor array of gaseous contamination in the sensing chamber of the present invention is characterized in that this array is to be made of than different indium and tin oxide film gas sensors several indium tin, and wherein the scope of indium/tin atom ratio is 0-1.0.
Because indium is an III family element, tin is IV family element, and therefore the Fermi level of the indium and tin oxide film of different indium tin ratios, charge carrier kind, carrier concentration etc. will change with indium tin ratio.For example, the film that the many tin of indium are few tends to p type conduction, easily from the gas molecule electron gain; And the many films of the few tin of indium tend to n type conduction, easily provide electronics to gas molecule.Therefore have nothing in common with each other by the response of each sensor in this sensor array that constitutes by p type and n type gas sensor, make this sensor array will improve greatly the selectivity of gas to gas.
The present invention utilizes the indium and tin oxide film of different indium tin ratios to constitute a sensor array, can differentiate several frequently seen indoor polluted gas easily, comprises benzene,toluene,xylene, formaldehyde etc.Its ultimate principle is the Fermi level difference of the indium tin oxide of different indium tin ratios, and a plurality of such thin film gas sensors constitute the sensor array that Fermi level is different.When on gas absorption each sensor in this array, because Fermi level difference, electric charge between gas molecule and each sensor shifts also inequality, causes in the array different sensors also different to the response of same gas, realizes the discriminating to gaseous species to be measured thus.
Description of drawings
Fig. 1 is a gas sensor array synoptic diagram of the present invention;
Fig. 2 is that electric charge shifts synoptic diagram between gas molecule and colorimetric sensor films;
Fig. 3 is the response diagram that gas sensor array of the present invention detects 4 kinds of common indoor polluted gas.
Embodiment
Shown in Figure 1, be the gas sensor array of gaseous contamination in the sensing chamber that constitutes than different indium and tin oxide film gas sensors by 5 indium tin, their indium/tin atom ratio is respectively 0.10,0.20,0.40,0.60,0.70.
The indium and tin oxide film of different indium tin ratios is prepared by sol-gel process.With SnCl
22H
2O and InCl
34H
2O is a raw material, and raw material is dissolved in a certain amount of absolute ethyl alcohol, adds a certain amount of glacial acetic acid simultaneously, the solution 2h that heats while stirring, and the agitating heating temperature is controlled at 60 ℃, at room temperature deposits then 1-2 days, obtains the solution of homogeneous transparent at last.The solution that will obtain with said method is made gold electrode before pre-hollow ceramic post plates one deck wet film, through obtaining indium tin oxide film on the hollow ceramic post through 500 degree high-temperature heat treatment again after 80 degree, the two step pre-service of 180 degree.
Fig. 2 shifts synoptic diagram for electric charge between the Fermi level different sensors among the present invention, and LUMO represents the minimum molecular orbit that is not occupied by electronics among the figure, and HOMO is the highest molecular orbit that is occupied by electronics.The amount that electric charge shifts is relevant with the Fermi level of direction and colorimetric sensor films.
Use gaseous contamination in the gas sensor array shown in Figure 1 sensing chamber, the result as shown in Figure 3,5 indium tin are obviously more different to the response that 4 kinds of common indoor polluted gas provide than different indium and tin oxide film sensor arraies.(gas concentration is 100ppm).Be not difficult to find out, utilize this sensor array can clearly distinguish gases such as benzene,toluene,xylene and formaldehyde.
Claims (1)
1. the gas sensor array of gaseous contamination in the sensing chamber is characterized in that this array is to be made of than different indium and tin oxide film gas sensors several indium tin, and wherein the scope of indium/tin atom ratio is 0-1.0.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310108469 CN1225653C (en) | 2003-11-04 | 2003-11-04 | Gas sensor array for detecting indoor gas pollution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310108469 CN1225653C (en) | 2003-11-04 | 2003-11-04 | Gas sensor array for detecting indoor gas pollution |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1542444A true CN1542444A (en) | 2004-11-03 |
| CN1225653C CN1225653C (en) | 2005-11-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200310108469 Expired - Fee Related CN1225653C (en) | 2003-11-04 | 2003-11-04 | Gas sensor array for detecting indoor gas pollution |
Country Status (1)
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| CN (1) | CN1225653C (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100406880C (en) * | 2006-01-17 | 2008-07-30 | 山东师范大学 | Formaldehyde gas sensitive device with laminated sensitive layer and preparation method thereof |
| CN102713593A (en) * | 2009-11-09 | 2012-10-03 | 洛维拉·依维尔基里大学 | Device for the selective detection of benzene gas, method of obtaining it and detection of the gas therewith |
| CN103221809A (en) * | 2010-07-13 | 2013-07-24 | 图宾根埃伯哈德·卡尔斯大学 | Gas sensor and method for producing the same |
| CN104677950A (en) * | 2015-02-15 | 2015-06-03 | 南京益得冠电子科技有限公司 | Formaldehyde-sensitive material used for semiconductor formaldehyde sensor and semiconductor formaldehyde sensor |
-
2003
- 2003-11-04 CN CN 200310108469 patent/CN1225653C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100406880C (en) * | 2006-01-17 | 2008-07-30 | 山东师范大学 | Formaldehyde gas sensitive device with laminated sensitive layer and preparation method thereof |
| CN102713593A (en) * | 2009-11-09 | 2012-10-03 | 洛维拉·依维尔基里大学 | Device for the selective detection of benzene gas, method of obtaining it and detection of the gas therewith |
| CN102713593B (en) * | 2009-11-09 | 2014-08-06 | 洛维拉·依维尔基里大学 | Device for the selective detection of benzene gas, method of obtaining it and detection of the gas therewith |
| CN103221809A (en) * | 2010-07-13 | 2013-07-24 | 图宾根埃伯哈德·卡尔斯大学 | Gas sensor and method for producing the same |
| US9091669B2 (en) | 2010-07-13 | 2015-07-28 | Eberghard Karls Universitat Tubingen | Gas sensor and method for producing the same |
| CN103221809B (en) * | 2010-07-13 | 2015-09-23 | 图宾根埃伯哈德·卡尔斯大学 | gas sensor and preparation method thereof |
| CN104677950A (en) * | 2015-02-15 | 2015-06-03 | 南京益得冠电子科技有限公司 | Formaldehyde-sensitive material used for semiconductor formaldehyde sensor and semiconductor formaldehyde sensor |
| CN104677950B (en) * | 2015-02-15 | 2018-03-06 | 南京益得冠电子科技有限公司 | Formaldehyde sensitive material and semiconductor formaldehyde sensor for semiconductor formaldehyde sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1225653C (en) | 2005-11-02 |
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