CN1540386A - Method for processing and manufacturing components and parts applied in micro-electronics and mechanical system - Google Patents
Method for processing and manufacturing components and parts applied in micro-electronics and mechanical system Download PDFInfo
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- CN1540386A CN1540386A CNA031279406A CN03127940A CN1540386A CN 1540386 A CN1540386 A CN 1540386A CN A031279406 A CNA031279406 A CN A031279406A CN 03127940 A CN03127940 A CN 03127940A CN 1540386 A CN1540386 A CN 1540386A
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- photoetching
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Abstract
The invention discloses method to meet needs from different users and of manufacturing different parts as well as being suitable to microelectronic mechanical system (MEMS). Method for manufacturing parts in invented technical scheme includes at least two steps from following steps: (1) preparing piezoresistance, (2) preparing thin film, (3) breaking through and setting free thin film. The manufacturing method possesses features of dividing procedure into separable and customized parts so as to let more people and speciality enter into MEMS field.
Description
Technical field
The present invention relates to a kind of manufacture method of components and parts, refer to a kind of machining manufacture that is applicable to the components and parts of microelectromechanical systems (hereinafter to be referred as MEMS) especially.
Background technology
Microelectromechanical systems (MEMS) is as originating from the interdiscipline of the nineties in last century and advanced manufacturing technology to the quality of life of improving people, the living standard that improves people, and strengthens national power irreplaceable vital role is all arranged.Because strong multidisciplinary intersection feature and to the dependence of process technology, the research mode of MEMS and process technology are with regard to the inherent diversity that has.Although silicon technology has become the main flow of MEMS process technology in recent years, a kind of research mode of device one cover technology does not have to change substantially.Because the realization of MEMS device needs the integration of many-sided technology, this complicacy makes the researchist be difficult to grasp all technology contents that are designed into process technology from device principle of work, device architecture comprehensively.And the specialized inadequately of the low-level and research method of present this resource sharing makes the development of MEMS technology be subjected to very big restriction, become a bottleneck problem.How can share the achievement of scientific research, more specialized the technical matters that solves in the MEMS technical development process to greatest extent, develop a kind of MEMS device production line as automobile, televisor or integrated circuit, making this industry move towards optimum market circulation is the dream of being engaged in MEMS technical research and market development personnel.
At the subject matter that exists in the MEMS technical development process, how the angle from process technology works out a kind of demand that can satisfy different user, different components processing technology, realizes that the insider is being perplexed in the production line production of MEMS device always.
Summary of the invention
In view of the foregoing, the purpose of this invention is to provide and a kind ofly can satisfy components and parts machining manufacture different user, different components process requirements, that be applicable to microelectromechanical systems (MEMS).
For achieving the above object, the present invention takes following design proposal: a kind of manufacture method of components and parts, and in comprising the steps at least two:
1) pressure drag preparation;
2) film preparation;
3) the film break-through discharges.
Described step 1 specifically may further comprise the steps again:
(1) thermal oxide;
(2) 1 photoetching;
(3) corrosion SiO
2
(4) ion injects
11B
+
(5) boron drives in;
(6) 2 photoetching;
(7) etching SiO
2
(8) dense boron diffusion, thermal oxide;
(9) 3 photoetching;
(10) etching SiO
2
(11) dense phosphorous diffusion, thermal oxide;
(12) 5 photoetching (fairlead);
(13) corrosion SiO
2Remove photoresist;
(14) splash-proofing sputtering metal aluminium or chromium/gold;
(15) 6 photoetching (front metal lead-in wire);
(16) corroding metal; Remove photoresist.
Described step 2 specifically may further comprise the steps:
(1) lpcvd silicon nitride;
(2) 4 photoetching (dual surface lithography, back of the body alveolus);
(3) RIE back side silicon nitride; RIE front silicon nitride; Remove photoresist in the back side;
(4) silicon chip front protecting; KOH corrosion silicon is to surplus 30 μ m.
Described step 3 specifically may further comprise the steps:
(1) 7 photoetching (reach through region);
(2) ICP is etched to break-through; Remove photoresist.
The silicon thin film piezo-resistance device manufacture method that the sectional that is applicable to microelectromechanical systems (MEMS) that the present invention proposes uses has been established solid foundation for realizing the MEMS technical research to the professional development of sharing out the work and help one another.The invention has the advantages that the simple and practical method of utilizing MEMS processing and manufacturing components and parts of having developed.But use cutting because it has segmentation, therefore can allow the more professional MEMS field that enters of more people, different users can intercept required step according to the demand of oneself.Its positive effect is that also the proposition of this machining manufacture and the exploitation of standard technology will bring revolutionary change and progress to the development of MEMS technology, the development in MEMS technology and market will greatly be promoted, the integrated circuit industry that the MEMS technology finally can be developed as today.
Description of drawings
Fig. 1 is a components and parts cross-section structure behind 1 photoetching of the embodiment of the invention, corrosion oxidation silicon, the injection ion
Fig. 2 is a components and parts cross-section structure behind the embodiment of the invention 1 secondary photoetching, the etching oxidation silicon
Fig. 3 is a components and parts cross-section structure after the embodiment of the invention 1 dense boron diffusion, thermal oxide, 3 photoetching
Fig. 4 is a components and parts cross-section structure behind the embodiment of the invention 1 dense phosphorous diffusion, thermal oxide, the LPCVD monox
Fig. 5 for embodiment of the invention 1KOH corrosion silicon after the components and parts cross-section structure
Fig. 6 is a components and parts cross-section structure behind 1 five photoetching of the embodiment of the invention, the etching oxidation silicon
Fig. 7 is a components and parts cross-section structure after the embodiment of the invention 1 splash-proofing sputtering metal, 6 photoetching, the metal erosion
Fig. 8 is etched to components and parts cross-section structure after the break-through for the embodiment of the invention 1 seven photoetching, ICP
Fig. 9 is 2 photoetching of the embodiment of the invention, corrosion oxidation silicon, ion injection back components and parts cross-section structure
Figure 10 is a components and parts cross-section structure behind the embodiment of the invention 2 secondary photoetching (P+ district), the etching oxidation silicon
Figure 11 is the embodiment of the invention 2 dense boron diffusions, thermal oxide, 3 photoetching (N+ district) back components and parts cross-section structure
Figure 12 is a components and parts cross-section structure behind the embodiment of the invention 2 dense phosphorous diffusions, thermal oxide, the lpcvd silicon nitride
Figure 13 for embodiment of the invention 2KOH corrosion silicon after the components and parts cross-section structure
Figure 14 is a components and parts cross-section structure behind 2 five photoetching of the embodiment of the invention, the etching oxidation silicon
Figure 15 is the embodiment of the invention 2 metal deposits, 6 photoetching, metal erosion, and back components and parts cross-section structure removes photoresist
Figure 16 is 3 four photoetching of the embodiment of the invention, RIE nitrogenize silicon/oxidative silicon, back components and parts cross-section structure removes photoresist
Figure 17 is embodiment of the invention 3KOH corrosion silicon components and parts cross-section structure to the surplus 30 μ m
Figure 18 is the embodiment of the invention 3 metal deposits, 6 photoetching, metal erosion, back components and parts cross-section structure removes photoresist
Figure 19 components and parts cross-section structure that is 3 seven photoetching of the embodiment of the invention, etching oxidation silicon/silicon to the break-through
Number in the figure is described as follows:
1, silicon chip 2, monox 3, photoresist
4, light boron doped region 5, dense boron doped region 6, silicon nitride
7, dense phosphorous diffusion district 8, back of the body chamber 9, fairlead
10, metal lead wire 11, accelerometer semi-girder 13, accelerometer mass
Embodiment
Provided by the inventionly be applicable to that silicon thin film pressure resistance type device making method microelectromechanical systems, that sectional uses mainly comprises pressure drag preparation, film preparation and film break-through and discharges three basic steps.Different users can take above-mentioned three steps of independent use apart according to the requirement of different components processing, also can be used in combination above-mentioned three steps.
For example, above-mentioned three step processing and manufacturing accelerometers of use capable of being combined and gas meter; Also can be only with devices such as pressure drag preparation, two step processing and manufacturings of film preparation pressure gauges; Can also only use film preparation and film break-through to discharge devices such as two step processing and manufacturing low-power consumption chemistry gas sensor.
Specify below in conjunction with accompanying drawing.
Embodiment 1: the process that is used in combination above-mentioned three step processing and manufacturing accelerometer chip.
As Fig. 1-shown in Figure 8, it specifically may further comprise the steps:
1, thermal oxide 3000 , the diffusion mask
2,1 photoetching forms P-piezoresistive regions figure
3, BHF corrosion SiO
2
4, ion inject 100Kev,
11B
+, 1.8-4.0E14cm-2, pressure drag mixes up (as shown in Figure 1); Remove photoresist
5, boron drives in 1100 ℃ of (N
2, 120`); 1000 ℃ of thermal oxides, 3000 form the diffusion mask
6,2 photoetching (P
+The district)
7, etching SiO
2(as shown in Figure 2); Remove photoresist
8,1100 ℃ of (N of dense boron diffusion
2, 30`); Thermal oxide 3000
9,3 photoetching form N
+District's figure
10, etching SiO
2(as shown in Figure 3); Remove photoresist
11,1000 ℃ of (N of dense phosphorous diffusion
2, 30`); Thermal oxide 3000 form the diffusion mask
12, lpcvd silicon nitride 1200-1400
13,4 photoetching, dual surface lithography forms back of the body alveolus figure
14, RIE back side silicon nitride (as shown in Figure 4), the KOH etching mask; RIE front silicon nitride; Remove photoresist in the back side
15, KOH corrosion silicon is to surplus 30 μ m (as shown in Figure 5)
16,5 photoetching form the fairlead figure
17, etching SiO
2(as shown in Figure 6); Remove photoresist
18, sputtered aluminum, 800 nanometers
19,6 photoetching form front metal lead-in wire figure
20, phosphoric acid corrosion aluminium (as shown in Figure 7); Remove photoresist
21,7 photoetching form the reach through region figure
22, the ICP etch silicon is to break-through (as shown in Figure 8); Remove photoresist.
Embodiment 2: only with pressure drag preparation, two manometric processes of step processing and manufacturing of film preparation.
As Fig. 9-shown in Figure 15, it specifically may further comprise the steps:
1. thermal oxide 3000
2.1 inferior photoetching (P-piezoresistive regions)
3.BHF corrosion SiO
2
Ion inject 100Kev,
11B
+, 1.8-4.0E14cm
-2(as shown in Figure 9); Remove photoresist
5. boron drives in 1100 ℃ of (N
2, 120`); 1000 ℃ of thermal oxides, 3000
6. 2 photoetching (P
+The district)
7. etching SiO
2(as shown in figure 10); Remove photoresist
8. 1100 ℃ of (N of dense boron diffusion
2, 30`); Thermal oxide 3000
9. 3 photoetching (N+ district)
10. etching SiO
2(as shown in figure 11); Remove photoresist
11. 1000 ℃ of (N of dense phosphorous diffusion
2, 30`); Thermal oxide 3000
12.LPCVD silicon nitride 1200-1400
13. 4 photoetching, dual surface lithography, back of the body alveolus
14.RIE back side silicon nitride; RIE front silicon nitride (as shown in figure 12); Remove photoresist in the back side
15.KOH corrosion silicon is to surplus 30 μ m (as shown in figure 13)
16. 5 photoetching, fairlead
17. etching SiO
2(as shown in figure 14); Remove photoresist
18. sputtered aluminum, 800 nanometers
19. 6 photoetching, the front metal lead-in wire
20. phosphoric acid corrosion aluminium; Remove photoresist (as shown in figure 15).
Embodiment 3: use film preparation and film break-through to discharge the process of two step processing and manufacturing low-power consumption chemistry gas sensor
As Figure 16-shown in Figure 19, it specifically may further comprise the steps:
1. thermal oxide 3000﹠amp;
2.LPCVD silicon nitride 1200-1400
3. 4 photoetching (dual surface lithography, back of the body alveolus)
4.RIE back side silicon nitride (as shown in figure 16); RIE front silicon nitride; Remove photoresist in the back side
5.KOH corrosion silicon is to surplus 30 μ m (as shown in figure 17)
6. 6 photoetching
7. front depositing metal platinum (Pt) 3000 , metal-stripping (as shown in figure 18)
8. 7 photoetching (reach through region)
7.ICP etch silicon is to break-through; Remove photoresist (as shown in figure 19).
Claims (5)
1, a kind of manufacture method of components and parts is characterized in that: during it comprises the steps at least two:
1) pressure drag preparation;
2) film preparation;
3) the film break-through discharges.
2, the manufacture method of a kind of components and parts according to claim 1 is characterized in that: described step 1 specifically may further comprise the steps:
(1) thermal oxide;
(2) 1 photoetching;
(3) corrosion SiO
2
(4) ion injects
11B
+
(5) boron drives in;
(6) 2 photoetching;
(7) etching SiO
2
(8) dense boron diffusion, thermal oxide;
(9) 3 photoetching;
(10) etching SiO
2
(11) dense phosphorous diffusion, thermal oxide;
(12) 5 photoetching (fairlead);
(13) corrosion SiO
2Remove photoresist;
(14) splash-proofing sputtering metal aluminium or chromium/gold;
(15) 6 photoetching (front metal lead-in wire);
(16) corroding metal; Remove photoresist.
3, the manufacture method of a kind of components and parts according to claim 1 and 2 is characterized in that: described step 2 specifically may further comprise the steps:
(1) lpcvd silicon nitride;
(2) 4 photoetching (dual surface lithography, back of the body alveolus);
(3) RIE back side silicon nitride; RIE front silicon nitride; Remove photoresist in the back side;
(4) silicon chip front protecting; KOH corrosion silicon is to surplus 30 μ m.
4, the manufacture method of a kind of components and parts according to claim 1 and 2 is characterized in that: described step 3 specifically may further comprise the steps:
(1) 7 photoetching (reach through region);
(2) ICP is etched to break-through; Remove photoresist.
5, the manufacture method of a kind of components and parts according to claim 3 is characterized in that: described step 3 specifically may further comprise the steps:
(1) 7 photoetching (reach through region);
(2) ICP is etched to break-through; Remove photoresist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031279406A CN1322591C (en) | 2003-04-25 | 2003-04-25 | Method for processing and manufacturing components and parts applied in micro-electronics and mechanical system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031279406A CN1322591C (en) | 2003-04-25 | 2003-04-25 | Method for processing and manufacturing components and parts applied in micro-electronics and mechanical system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1540386A true CN1540386A (en) | 2004-10-27 |
| CN1322591C CN1322591C (en) | 2007-06-20 |
Family
ID=34322092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031279406A Expired - Fee Related CN1322591C (en) | 2003-04-25 | 2003-04-25 | Method for processing and manufacturing components and parts applied in micro-electronics and mechanical system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1322591C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102976263A (en) * | 2012-12-11 | 2013-03-20 | 北京大学 | Method for preparing micro-electromechanical system (MEMS) piezoresistive multi-axis sensor |
| CN104752151A (en) * | 2013-12-27 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Integrated passive device and manufacture method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3246023B2 (en) * | 1993-01-14 | 2002-01-15 | 富士電機株式会社 | Method of manufacturing acceleration sensor |
| JP3344138B2 (en) * | 1995-01-30 | 2002-11-11 | 株式会社日立製作所 | Semiconductor composite sensor |
| JPH10135486A (en) * | 1996-10-29 | 1998-05-22 | Matsushita Electric Works Ltd | Manufacture of semiconductor acceleration sensor |
| JPH10242480A (en) * | 1997-02-28 | 1998-09-11 | Matsushita Electric Works Ltd | Semiconductor pressure sensor |
-
2003
- 2003-04-25 CN CNB031279406A patent/CN1322591C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102976263A (en) * | 2012-12-11 | 2013-03-20 | 北京大学 | Method for preparing micro-electromechanical system (MEMS) piezoresistive multi-axis sensor |
| CN102976263B (en) * | 2012-12-11 | 2015-04-15 | 北京大学 | Method for preparing micro-electromechanical system (MEMS) piezoresistive multi-axis sensor |
| CN104752151A (en) * | 2013-12-27 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Integrated passive device and manufacture method thereof |
| CN104752151B (en) * | 2013-12-27 | 2018-08-17 | 中芯国际集成电路制造(上海)有限公司 | A kind of integrated passive devices and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1322591C (en) | 2007-06-20 |
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| C14 | Grant of patent or utility model | ||
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Granted publication date: 20070620 Termination date: 20120425 |