CN1540370A - Filter type spectrum component - Google Patents
Filter type spectrum component Download PDFInfo
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- CN1540370A CN1540370A CNA2003101083465A CN200310108346A CN1540370A CN 1540370 A CN1540370 A CN 1540370A CN A2003101083465 A CNA2003101083465 A CN A2003101083465A CN 200310108346 A CN200310108346 A CN 200310108346A CN 1540370 A CN1540370 A CN 1540370A
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Abstract
Super narrow band pass filters possessing a series of continuous transmission peak position are designed, and the said filters are integrated so as to form filter type dispersing unit. The unit includes two pieces of substrate. Identical disorder type film system is coated on one surface of the substrate. Semipellets in micron size made from high polymer are adhibited on fringe around between two film system so as to be integrated as a sealed whole with vacuum layer in between. Disorder type film of one substrate is coated on groove array with gradual changed depth. Features of the invention are: simple structure, small size, good monochromaticity. The invented unit plus entrance slit and exit slit could constitute an integral monochromator.
Description
Technical field
The present invention relates to beam splitter, specifically be meant by the integrated beam splitter of a plurality of bandpass filters.
Background technology
Present existing beam splitter mainly contains two kinds on prism and grating.The principle of prismatic decomposition is to utilize the refractive index difference of different wavelengths of light, and when they passed through prism, deviation in various degree can take place in the direction of propagation, thereby light just separated coming after leaving prism, reaches the purpose of beam split.The used optical material of the wavelength coverage that the lens type beam splitter is suitable for and prism is relevant, and its shortcoming is that light beam broader bandwidth, the resolution told are lower, and usable range is subjected to the restriction of prism material therefor.
Grating beam splitting then is according to grating formula dsin θ=k λ, and wherein d is that nip clearance, the θ of grating are that angle of diffraction, k are that the order of diffraction is inferior, λ is a light wavelength, behind the light process grating of different wave length, because the diffraction angle difference will separatedly come.The nip clearance d of grating is more little, and the light between the different wave length is just got more and opened.Its shortcoming is to have second-order diffraction spectrum, and the influence of this second-order diffraction light occurs in the spectrum segment of wavelength integral multiple.In order to reduce the influence of second-order diffraction, need be used in combination with cutoff filter usually.
Problem based on above-mentioned prior art exists the purpose of this invention is to provide a kind of beam splitter that can tell bandwidth optical filtering chip narrower, easy to use.
Beam splitter of the present invention is by designing the continuous super narrow bandpass optical filter of a series of transmission peak positions, and is integrated in the beam splitter that forms the optical filtering chip together.
Filtering Chip Type Dividing Light Component of the present invention comprises: two substrates, one surface of two substrates respectively is coated with identical unordered type film, edge between two unordered type films are is stained with the micron bead glue that macromolecule polymer material is made, make its vacuum seal be fixed into one, the middle vacuum layer that forms.
Said unordered type film is to be to be made of at least 12 times the silica coating of low-refraction or the tantalum pentoxide rete or the germanium rete alternative stacked of silicon monoxide rete and high index of refraction, and the thickness of each rete is the bed thickness of random fluctuation.
A slice substrate upper and lower surface in said two substrates all is the plane, and unordered type film is to be plated on the plane; The one side of another sheet substrate is the plane, and another side is carved with the different groove array of the degree of depth, and unordered type film system is plated on the one side of fluted array, and it is fixed that the depth of groove difference requires according to beam split.
The principle of work of Filtering Chip Type Dividing Light Component of the present invention is based on " the double-deck unordered type super narrow bandpass optical film filter " that be similar to F-P interferometer structure of the inventor application in 2002, promptly in a certain wavelength band, when the transmission peak position of designed super narrow bandpass optical filter is certain, the thickness of vacuum layer is also certain, as change the thickness of vacuum layer, when promptly changing the spacing between the unordered type film of the levels system, the transmission peak position of super narrow bandpass optical filter can move thereupon.Therefore as long as on a substrate, make the different groove array of the depth, being coated with unordered type film then thereon is, vacuum layer thickness between the unordered type film of the levels of zones of different system is just different so, pairing transmission peak position is also just different, thereby make each grooved area can only pass through a kind of monochromatic light, gradual change by the control groove array degree of depth, be equivalent to the super narrow bandpass optical filter of a large amount of transmission peak position gradual changes is integrated on the fritter slice, thin piece, it is meticulous so just can to obtain beam split, the good light beam of monochromaticity.
Beam splitter of the present invention has the following advantages:
1. light beam transmitance height, the monochromaticity told are good;
2. simple in structure, volume is little, just can constitute a complete monochromator if add entrance slit and exit slit, is very beneficial for the combination with other system, constitutes various spectral measurement systems.
Description of drawings
Fig. 1 is the used mask plate of present embodiment etched recesses array, a figure is the 1st the used mask plate of etched recesses array, b figure is the 2nd the used mask plate of etched recesses array, c figure is the 3rd the used mask plate of etched recesses array, d figure is the used mask plate of the 4th etched recesses array, and e figure is the used mask plate of the 5th etched recesses array.
Fig. 2 a is the substrate plane figure that is etched with the groove array, and Fig. 2 b is the sectional view of Fig. 2 a.
Fig. 3 is the cross-sectional view of beam splitter of the present invention.
Fig. 4 is the spectrogram of 32 monochromic beams told through the present embodiment beam splitter.
Embodiment
With 8 * 4 groove arrays, dividing optical band is embodiment at 510.0nm-540.0nm, in conjunction with the accompanying drawings the specific embodiment of the present invention is described in further detail below:
1. the preparation of substrate
(1) design of depth of groove
According to designed film is that the central homology peak position of film system as can be known is λ
0And the original depth of corresponding vacuum layer is t
0, change vacuum layer thickness into t then
1, then corresponding transmission peak position can become λ
1, the amount that can draw the required change vacuum layer of change unit transmission peak position thickness thus is
So the pass of the thickness t of vacuum layer and corresponding transmission peak position λ is:
Because vacuum layer thickness t=little bulb diameter+depth of groove between two films systems, therefore, each transmission peak position vacuum layer thickness t-little bulb diameter between right depth of groove=two films system.
Distribution according to aforementioned calculation can draw present embodiment 8 * 4 different depth recess arrays sees Table 1.
(2) etching of groove
Backing material is quartzy, and size be two times of beam splitter, and its half be substrate 1, and second half is a substrate 2, substrate 2 stay 5-10mm to be used for the bonding usefulness of bead all around, all the other make etched recesses array usefulness.The etching of groove is utilized ripe ion etching technology, and according to the arrangement of table 1 depth of groove, we can adopt the mask plate stack alignment of 5 different etching region shapes, see Fig. 1.Etching order is the mask plate that adopts the mask plate of the mask plate of the mask plate of the mask plate of a diagram shape among Fig. 1, b diagram shape, c diagram shape, d diagram shape, e diagram shape to substrate 2 alignment that superposes successively, each figure is when stack, and etch areas 6 is orthogonal.Only need 5 etchings altogether, just can form 8 * 4 groove arrays of different depth, see Table 2.Equally we also can be only through minority etching several times, just form m * n groove array at an easy rate, m and n are even number, general m, n are less than 16 even can realizations.
2. the preparation that unordered type film is
The entire substrate 1 that is having the groove array, 2 upward are coated with unordered type film by vacuum coating method is 3, said unordered type film is 3 to be to be made of at least 12 times the silica coating of low-refraction and the titanium oxide film layer alternative stacked of high index of refraction, the thickness of each rete is the bed thickness of random fluctuation, its production method is a reference point with 1/4 centre wavelength 530nm place of every layer material optical thickness at first, form the film system that every layer of optical thickness is 1/4 wavelength, then every layer optical thickness is done the variation of a random fluctuation, its production method is asked for an interview China Patent No.: 01139082.4.Form silicon dioxide as shown in table 3 and titania at last through the bed thickness after the random fluctuation.On substrate, press sequence number order in the table 3 then, the 24th layer of beginning plated film from the sequence number maximum is plated to the 1st layer successively.Because the unordered type film system that proposes among the present invention is less demanding to the control accuracy that each tunic is thick in the film system, even if therefore very common common control accuracy reaches 5% thermal evaporation coating machine and also can be coated with.
3. the assembling of beam splitter
The substrate of the good unordered type film of plating system is divided into two by the dotted line among Fig. 2, form substrate 1 and substrate 2, edge between two unordered type films are is stained with the micron bead glue 4 that macromolecule polymer material is made then, makes its vacuum seal be fixed into one, the middle vacuum layer 5 that forms.Because micron bead glue is made up of even-grained plastic beads, under the effect of pressure, can sprawl into single layer structure, this moment, the distance between two was exactly the degree of depth that micron diameter of bead glue adds groove up and down, can regulate the feasible micron of a pressure bead glue generation deformation, thereby the distance adjustment between two is to design attitude up and down, and heating makes the glue typing then, fixing distance between two up and down, promptly constitute the beam splitter of optical filtering chip of the present invention, seen Fig. 3.32 monochromic beams of Fig. 4 for telling through Filtering Chip Type Dividing Light Component of the present invention.
The depth of groove of table 18 * 4 groove arrays and pairing transmission peak position
| Sequence number | Interlayer distance (nm) between two films system | Depth of groove (nm) | Pairing transmission peak position (nm) |
| ????1 | ??1807.8 | ??807.8 | ??511.0 |
| ????2 | ??1811.8 | ??811.8 | ??511.9 |
| ????3 | ??1815.8 | ??815.8 | ??512.9 |
| ????4 | ??1819.8 | ??819.8 | ??513.8 |
| ????5 | ??1823.8 | ??823.8 | ??514.8 |
| ????6 | ??1827.8 | ??827.8 | ??515.7 |
| ????7 | ??1831.8 | ??831.8 | ??516.7 |
| ????8 | ??1835.8 | ??835.8 | ??517.6 |
| ????9 | ??1839.8 | ??839.8 | ??518.6 |
| ????10 | ??1843.8 | ??843.8 | ??519.5 |
| ????11 | ??1847.8 | ??847.8 | ??520.5 |
| ????12 | ??1851.8 | ??851.8 | ??521.5 |
| ????13 | ??1855.8 | ??855.8 | ??522.4 |
| ????14 | ??1859.8 | ??859.8 | ??523.4 |
| ????15 | ??1863.8 | ??863.8 | ??524.3 |
| ????16 | ??1867.8 | ??867.8 | ??525.3 |
| ????17 | ??1871.8 | ??871.8 | ??526.2 |
| ????18 | ??1875.8 | ??875.8 | ??527.2 |
| ????19 | ??1879.8 | ??879.8 | ??528.1 |
| ????20 | ??1883.8 | ??883.8 | ??529.1 |
| ????21 | ??1887.8 | ??887.8 | ??530.0 |
| ????22 | ??1891.8 | ??891.8 | ??530.9 |
| ????23 | ??1895.8 | ??895.8 | ??531.9 |
| ????24 | ??1899.8 | ??899.8 | ??532.8 |
| ????25 | ??1903.8 | ??903.8 | ??533.7 |
| ????26 | ??1907.8 | ??907.8 | ??534.6 |
| ????27 | ??1911.8 | ??911.8 | ??535.5 |
| ????28 | ??1915.8 | ??915.8 | ??536.4 |
| ????29 | ??1919.8 | ??919.8 | ??537.3 |
| ????30 | ??1923.8 | ??923.8 | ??538.2 |
| ????31 | ??1927.8 | ??927.8 | ??539.1 |
| ????32 | ??1931.8 | ??931.8 | ??540.0 |
Annotate: interlayer distance=little bulb diameter+depth of groove between two films system, wherein little bulb diameter=1000nm
Total etching depth of table 2 corresponding units
| ??O | ??E | ??C | ??CE | ??A | ??AE | ??AC | ??ACE |
| ??D | ??DE | ??CD | ??CDE | ??AD | ??ADE | ??ACD | ??ACDE |
| ??B | ??BE | ??BC | ??BCE | ??AB | ??ABE | ??ABC | ??ABCE |
| ??BD | ??BDE | ??BCD | ??BCDE | ??ABD | ??ABDE | ??ABCD | ??ABCDE |
Table 3 transmission peak position λ
0Film system for the double-deck super narrow bandpass optical filter of 530.0nm
| The rete sequence number | Refractive index | Thickness (nm) |
| ??1 | Silicon dioxide: n=1.44, k=1e-5 | ????15.1 |
| ??2 | Tantalum pentoxide: n=2.16, k=1e-6 | ????14.0 |
| ??3 | Silicon dioxide: n=1.44, k=1e-5 | ????26.4 |
| ??4 | Tantalum pentoxide: n=2.16, k=1e-6 | ????24.5 |
| ??5 | Silicon dioxide: n=1.44, k=1e-5 | ????84.3 |
| ??6 | Tantalum pentoxide: n=2.16, k=1e-6 | ????117.4 |
| ??7 | Silicon dioxide: n=1.44, k=1e-5 | ????84.3 |
| ??8 | Tantalum pentoxide: n=2.16, k=1e-6 | ????52.0 |
| ??9 | Silicon dioxide: n=1.44, k=1e-5 | ????84.3 |
| ??10 | Tantalum pentoxide: n=2.16, k=1e-6 | ????54.6 |
| ??11 | Silicon dioxide: n=1.44, k=1e-5 | ????84.3 |
| ??12 | Tantalum pentoxide: n=2.16, k=1e-6 | ????47.8 |
| ??13 | Silicon dioxide: n=1.44, k=1e-5 | ????84.3 |
| ??14 | Tantalum pentoxide: n=2.16, k=1e-6 | ????73.4 |
| ??15 | Silicon dioxide: n=1.44, k=1e-5 | ????84.3 |
| ??16 | Tantalum pentoxide: n=2.16, k=1e-6 | ????49.3 |
| ??17 | Silicon dioxide: n=1.44 k=1e-5 | ????84.3 |
| ??18 | Tantalum pentoxide: n=2.16, k=1e-6 | ????41.6 |
| ??19 | Silicon dioxide: n=1.44, k=1e-5 | ????84.3 |
| ??20 | Tantalum pentoxide: n=2.16, k=1e-6 | ????65.8 |
| ??21 | Silicon dioxide: n=1.44, k=1e-5 | ????34.3 |
| ??22 | Tantalum pentoxide: n=2.16, k=1e-6 | ????49.8 |
| ??23 | Silicon dioxide: n=1.44, k=1e-5 | ????84.3 |
| ??24 | Tantalum pentoxide: n=2.16, k=1e-6 | ????56.9 |
| Interlayer between two films system | Vacuum: n=1.0, k=0 | ????1887.8 |
Claims (2)
1. a Filtering Chip Type Dividing Light Component comprises: two substrates, one surface of two substrates respectively is coated with identical unordered type film system (3), edge between two unordered type films are is stained with the micron bead glue (4) that macromolecule polymer material is made, make its vacuum seal be fixed into one, the middle vacuum layer (5) that forms;
It is characterized in that: said unordered type film system (3) is to be made of at least 12 times the silica coating of low-refraction or the tantalum pentoxide rete or the germanium rete alternative stacked of silicon monoxide rete and high index of refraction, and the thickness of each rete is the bed thickness of random fluctuation;
The surface of said substrate (1) is the plane, unordered type film is to be plated on the plane, and the one side of substrate (2) is the plane, and another side is carved with the different groove array (5) of the degree of depth, unordered type film system is plated on the one side of fluted array, and it is fixed that the depth of groove difference requires according to beam split.
2. according to a kind of Filtering Chip Type Dividing Light Component of claim 1, it is characterized in that: said backing material is for quartzy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101083465A CN1226639C (en) | 2003-10-31 | 2003-10-31 | Filter type spectrum component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101083465A CN1226639C (en) | 2003-10-31 | 2003-10-31 | Filter type spectrum component |
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| Publication Number | Publication Date |
|---|---|
| CN1540370A true CN1540370A (en) | 2004-10-27 |
| CN1226639C CN1226639C (en) | 2005-11-09 |
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|---|---|---|---|
| CNB2003101083465A Expired - Fee Related CN1226639C (en) | 2003-10-31 | 2003-10-31 | Filter type spectrum component |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1306288C (en) * | 2005-04-27 | 2007-03-21 | 中国科学院上海技术物理研究所 | Light-filtering sheet array with heat resonant cavity layer |
| CN100334471C (en) * | 2005-09-02 | 2007-08-29 | 中国科学院上海技术物理研究所 | Narrow-band filter array with multi-cavity structure |
| CN103647207A (en) * | 2013-12-11 | 2014-03-19 | 电子科技大学 | Reflective film for laser resonant cavity mirror, and preparation method thereof |
| CN104538842A (en) * | 2014-12-09 | 2015-04-22 | 中国科学院上海技术物理研究所 | Quantum dot embedded integrated micro-cavity monochromatic light source array |
| CN105549143A (en) * | 2016-03-04 | 2016-05-04 | 尹红伟 | Disorder-based multi-channel independently-adjustable local optical filter and designing method thereof |
| CN106405716A (en) * | 2016-11-24 | 2017-02-15 | 福建福特科光电股份有限公司 | Depolarization beam splitter |
| CN114236661A (en) * | 2021-11-11 | 2022-03-25 | 中国航空工业集团公司洛阳电光设备研究所 | Single crystal germanium infrared crystal spectroscope and preparation method of laser long-wave infrared beam splitting film |
-
2003
- 2003-10-31 CN CNB2003101083465A patent/CN1226639C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1306288C (en) * | 2005-04-27 | 2007-03-21 | 中国科学院上海技术物理研究所 | Light-filtering sheet array with heat resonant cavity layer |
| CN100334471C (en) * | 2005-09-02 | 2007-08-29 | 中国科学院上海技术物理研究所 | Narrow-band filter array with multi-cavity structure |
| CN103647207A (en) * | 2013-12-11 | 2014-03-19 | 电子科技大学 | Reflective film for laser resonant cavity mirror, and preparation method thereof |
| CN104538842A (en) * | 2014-12-09 | 2015-04-22 | 中国科学院上海技术物理研究所 | Quantum dot embedded integrated micro-cavity monochromatic light source array |
| CN105549143A (en) * | 2016-03-04 | 2016-05-04 | 尹红伟 | Disorder-based multi-channel independently-adjustable local optical filter and designing method thereof |
| CN106405716A (en) * | 2016-11-24 | 2017-02-15 | 福建福特科光电股份有限公司 | Depolarization beam splitter |
| CN114236661A (en) * | 2021-11-11 | 2022-03-25 | 中国航空工业集团公司洛阳电光设备研究所 | Single crystal germanium infrared crystal spectroscope and preparation method of laser long-wave infrared beam splitting film |
| CN114236661B (en) * | 2021-11-11 | 2023-09-08 | 中国航空工业集团公司洛阳电光设备研究所 | Single crystal germanium infrared crystal spectroscope and laser long wave infrared beam splitting film preparation method |
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| CN1226639C (en) | 2005-11-09 |
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Assignee: Shanghai Nicera Sensor Co., Ltd. Assignor: Shanghai Inst. of Technical Physics, Chinese Academy of Sciences Contract fulfillment period: 2007.1.5 to 2012.1.4 Contract record no.: 2008990000404 Denomination of invention: Filter type spectrum component Granted publication date: 20051109 License type: Exclusive license Record date: 2008.9.17 |
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Free format text: EXCLUSIVE LICENCE; TIME LIMIT OF IMPLEMENTING CONTACT: 2007.1.5 TO 2012.1.4 Name of requester: SHANGHAI NISAILA TRANSDUCER CO., LTD. Effective date: 20080917 |
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