CN1534801A - White luminuous diode and its manufacturing method - Google Patents
White luminuous diode and its manufacturing method Download PDFInfo
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- CN1534801A CN1534801A CNA031214347A CN03121434A CN1534801A CN 1534801 A CN1534801 A CN 1534801A CN A031214347 A CNA031214347 A CN A031214347A CN 03121434 A CN03121434 A CN 03121434A CN 1534801 A CN1534801 A CN 1534801A
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Abstract
A white-light LED and its preparing process are disclosed. It is composed of the first electrode, a substrate, the first luminous cell for generating the first-wavelength light, two gradient buffer layers (BxGa1-xP and InxGa1-xN), the second luminous cell for generating the second-wavelength light and the second electrode. Said first-wavelength light is maxed with said second-wavelength light to obtain white light.
Description
Technical field
The invention relates to a kind of white light emitting diode and preparation method thereof, especially by resilient coating district (B that two floor change in gradient
xGa
1-xP and In
xGa
1-xN) be able to gold-tinted diode and blue light diode can once be finished long brilliant action.
Background technology
Light-emitting diode (Light Emitting Diode, LED) be a kind of solid-state semiconductor subassembly, mutually combining of two carriers (being respectively the electric hole of electronegative electronics and positively charged) that produce in the diode when utilizing electric current to pass through discharges the form of energy with light.Because as long as feed minimum electric current at the light-emitting diode component two ends just can be luminous, and advantage such as it is luminous to belong to cold light, is different from the thermoluminescence principle of traditional osram lamp, has the brightness height, volume is little, power consumption is little, caloric value is few and the life-span is long.
The characteristics of luminescence of tradition light-emitting diode is all with single main crest (signle peakwavelength) and narrow halfwidth (full width of half maximum, FWHM) be demand, so the light that light-emitting diode is launched all is very pure solid color light, for example aluminum gallium arsenide light-emitting diode burn red, gallium phosphide LED glow green.In addition, see through and use different material systems, or same material system but different proportion of composing, can produce the light-emitting diode of the different brightness of different colours, the for example phosphorus in the modulation gallium arsenide phosphide material and the ratio of components of arsenic, or the ratio of components of the aluminium in the AlGaInP, gallium and indium, all can make the high brightness LED of containing red, yellow, green three looks.The light-emitting diode that structure that above-mentioned various material is formed and select for use and manufacture method are made all only sends the monochromatic light (single main crest) of very pure (halfwidth is very narrow).
Since light-emitting diode invention so far, people are striving for light-emitting diode as lighting source always, along with the continuous progress of light-emitting diode manufacturing technology and the exploitation and the application of new material, especially the appearance of white light emitting diode makes the light-emitting diode application stride foot gradually to high efficiency lighting source market.Compare with incandescent osram lamp and fluorescent lamp, it is little (many that white light emitting diode has a volume, multiple combination), caloric value low (not having thermal radiation), little (the low-voltage of power consumption, the low current starting), life-span long (more than 10,000 hours), reaction speed fast (can at high-frequency operation), environmental protection is (shatter-proof, shock-resistant being difficult for breaks, discarded object is recyclable, do not pollute, the title that [green illumination light source] arranged), but shortcoming (the high power consumption that planar package and easy exploiting become advantages such as compact product and do not have incandescent lamp bulb, frangible and fluorescent lamp discarded object contains mercury pollution), had an optimistic view of in following 10 years by industry, become big potentiality commodity that substitute the traditional lighting utensil.
Making in the technology of white light emitting diode, mainly be to utilize the mixing of color to reach the effect that forms white light, the form of white light that can see with human eyes at least must two kinds of light mixing, the gold-tinted and the blue light of for example combination monochrome, see through the ratio of adjusting luminous intensity, mix these two kinds of coloured light and reach the effect that forms white light; Also can see through the ratio of adjusting luminous intensity, mix the effect that these three kinds of coloured light reach white light by combine red, green glow and blue light.
In the manufacturing technology of above-mentioned white light emitting diode, two wavelength mixed lights (gold-tinted and blue light), be on blue light crystal grain, to be coated with one deck second aluminium garnet fluorescent material (yttrium aluminum garnet, YAG), utilize blue light-emitting diode to excite second aluminium garnet fluorescent material,, utilize lens principle again with the gold-tinted of generation with the blue light complementation, the gold-tinted and the blue light of complementation are mixed, obtained required white light.Please refer to Fig. 1, it is the section of structure that shows this white light emitting diode, this white light-emitting diode bulb is to utilize gallium nitride blue LED crystal grain 12 and YAG fluorescent material 14 to combine, LED crystal particle 12 has a negative electrode and an anode on its surface, LED crystal particle 12 places the groove (cavity) 17 on the metal pin 13, and two surface electrodes of LED crystal particle 12 are connected to metal pin 13 and metal pin 15 respectively, cover in the groove 17 of filling on the metal pins 13 with fluorescent material 14 again, at last again with encapsulating material 16 with whole crystal grain 12 together with metal pin 13,15 end portion encloses is fixed.
When electric current when negative pole flow to positive pole, gallium nitride light-emitting diode crystal grain 12 sends the blue light of wavelength near 460nm.To the outside, other blue light of being detained at YAG fluorescent material 14 is then absorbed by YAG fluorescent material 14 blue light of a part, further converts the gold-tinted of tool longer wavelength (550nm) to by YAG fluorescent material 14.Producing white light by the mixing of gold-tinted (fluorescence) that YAG fluorescent material 14 sent and the blue light nature that gallium nitride light-emitting diode crystal grain 12 sent, please refer to Fig. 2, is the luminous schematic diagram that shows this white light emitting diode.Can reach the purpose that produces white light though utilize gallium nitride light-emitting diode to add the YAG fluorescent material, but such practice there are several shortcomings to exist.At first be owing to the gold-tinted that converts to that makes by YAG absorption blue light, portion of energy is absorbed by YAG and is not converted light to, make gallium nitride add that its external quantum efficiency of diode structure of YAG is by about 5% of script gallium nitride light-emitting diode, drop to about 3% related reduction luminous efficiency and brightness.And because the conversion efficiency about 10% of YAG, so low efficient is if desire to keep the ratio of gold-tinted and blue light in the hope of blending required white light, the composition of YAG fluorescent material certainly will increase, cause YAG fluorescent material thickness thickening, and thick YAG fluorescent material layer will reduce assembly luminous efficiency and brightness, make external quantum efficiency poorer.And fluorescent material itself has the shortcoming of life-span (life time) decline, cause light emission color temperature wayward along with increasing service time, produce colour cast after will causing product to use certain time limit, thereby also relatively be restricted the life-span of this kind white light-emitting diode.
Compared to the white light emitting diode of above-mentioned single-chip (single chip) type, another kind of multicore sheet (multi chip) white light emitting diode then is that three kinds of light-emitting diodes of red, green, blue are formed same assembly, utilizes three primary colors to mix and produces white light.Difference is very big each other owing to three kinds of its semiconductor material of light-emitting diode of red, green, blue for this mode, therefore the design of the drive circuit very loaded down with trivial details complexity that also becomes, because if three chips are arranged, just must be controlled, so volume production will be subjected to very big restriction at the resistance of three chips, voltage etc.And its indivedual luminous efficiencies of three kinds of luminescent layers of sending red, green, blue are difficult for coupling, so it is difficult for forming high efficiency white light emitting diode.More, make the quality variation of light, therefore adopt the feasible of the more chip of single-chip (single chip) mode (multi chip) because the rate of decay difference of three chips will produce colour cast after use a period of time.
A kind of white light emitting diode that utilizes ultraviolet light-emitting diodes (UV LED) to excite also is suggested.Because its external quantum efficiency of ultraviolet ray (UV) light-emitting diode component can surpass more than 20%, if excite the three-wavelength fluorophor with this, just can obtain high efficiency white light emitting diode.But because the purple light energy of emitting is high, and ultraviolet light easily makes problems such as the rotten and fluorescent material deterioration of envelope prepared material (plastics), makes this kind assembly significantly reduce useful life.
And at United States Patent (USP) the 6th, 337, also expose a kind of zinc selenide (ZnSe) that utilizes in No. 536 and be the white light emitting diode of substrate, please refer to Fig. 3, be the section of structure that shows this white light emitting diode.Its utilization comprises zinc selenide and Zn
1-xCd
xThe sandwich construction of Se sends blue light, excites the luminescence center of zinc selenide substrate and produces gold-tinted, mixes the back and obtains white light, please refer to Fig. 4, is the luminous schematic diagram that shows this white light emitting diode.But it utilizes the zinc selenide substrate to absorb to be inspired by the zinc selenide substrate to light that luminescent layer sent the light of another constant color, so it is difficult for being combined into the white light emitting diode of suitable colour temperature, and it is low that the general diode product of its luminous efficiency comes, and life of product also needs further to improve.
Summary of the invention
In view of this, the present invention provides a kind of white light emitting diode and preparation method thereof in addition, by the resilient coating district (B that two floor change in gradient
xGa
1-xP and In
xGa
1-xN) it had two luminous components on a single-chip (single chip), and can once finish long brilliant action, send blue light and gold-tinted separately, after mixing naturally, can obtain white light, can exempt problems such as short, complex structure of above-mentioned its life-span of known white light emitting diode and luminous efficiency be not good, and blue light and gold-tinted make the easier coupling of luminous efficiency for distinctly luminous.
A kind of white light emitting diode provided by the present invention and preparation method thereof is by the resilient coating district (B that two floor change in gradient
xGa
1-xP and In
xGa
1-xN), can in different substrates, form white light emitting diode, being different from known white light emitting diode can only be in the technology of anchoring base formation, and can utilize above-mentioned resilient coating to reduce in the diode assembly lattice between each epitaxial layer do not match (latticemismatch), lattice between each epitaxial layer is mated more, to reduce the line defect in the diode assembly, provide the white light emitting diode of the perfect degree of crystallinity of tool.
For obtaining above-mentioned purpose, white light emitting diode of the present invention, it comprises the resilient coating district (B that one first conductive electrode, a substrate, one first luminous component, at least two floor change in gradient at least
xGa
1-xP and In
xGa
1-xN), one second luminous component and one second conductive electrode.Above-mentioned substrate and above-mentioned first conductive electrode form and electrically contact.Above-mentioned first luminous component, the first type bond course, one first luminous component active layer and one first luminous component, the second type bond course are formed in the above-mentioned substrate in regular turn, and constitute first luminous component.Above-mentioned resilient coating district is formed on above-mentioned first luminous component, the second type bond course, and this resilient coating district is made of one or more layers of resilient coating.The first type bond course in second luminous component, active layer and the second type bond course are formed in the above-mentioned resilient coating district in regular turn.Second conductive electrode and above-mentioned second luminous component, the second type bond course form and electrically contact.
When adding a current potential when being worse than between second conductive electrode stream and this first conductive electrode, produce an electric current, this electric current passes through this second luminous component, resilient coating district, reaches one first luminous component, make this first luminous component active layer send the light of first wave-length coverage, the light that this second luminous component active layer sends second wave-length coverage, the light that utilizes the light of this first wave-length coverage and second wave-length coverage mixes naturally and obtains white light.
The present invention also about its manufacture method of above-mentioned white light emitting diode, may further comprise the steps at least: a substrate is provided, and it contacts with one first conductive electrode; Form one first luminous component, the first type bond course, one first luminous component active layer and one first luminous component, the second type bond course in regular turn in above-mentioned substrate, to constitute first luminous component; Form the resilient coating district (B that at least two floor change in gradient
xGa
1-xP and In
xGa
1-xN) on above-mentioned first luminous component, the second type bond course; Form one second luminous component, the first type bond course, one second luminous component active layer and one second luminous component, the second type bond course in regular turn in above-mentioned resilient coating district, to constitute second luminous component, form one second conductive electrode at last on above-mentioned second luminous component, the second type bond course part surface.
Based on another object of the present invention, substrate of the present invention more can form at least two layers of resilient coating (B that changes in gradient on it
xGa
1-xP and In
xGa
1-xN).
The invention is characterized in that white light emitting diode of the present invention is single-chip (singlechip) type white light emitting diode, and it has first luminous component simultaneously and second light is sent out part on single-chip, the light of blue wavelength and yellow wavelengths can be sent separately, just white light can be obtained after mixing naturally.Blue light that white light emitting diode of the present invention sent and gold-tinted are all sent by diode itself, and need not to utilize stimulates other medium (fluorescent material or zinc selenide substrate) to send gold-tinted.
Another feature of the present invention is the white light emitting diode utilization of the present invention resilient coating district (B that changes in gradient of at least two floor at least
xGa
1-xP and In
xGa
1-xN) be arranged between the diode base and first luminous component, between first luminous component and second luminous component or be provided with simultaneously, and the lattice constant in this resilient coating district presents graded.The lattice constant that the bottom, resilient coating district of close substrate has one first lattice constant and substrate is slightly close, this lattice constant is increasing or decreasing again, second lattice constant that is had with surface, convergence resilient coating district, and make the lattice constant of second lattice constant and first luminous component, the first type bond course slightly close.On the other hand, the lattice constant that the bottom, resilient coating district of close first luminous component has one the 3rd lattice constant and first luminous component, the second type bond course is slightly close, this lattice constant is increasing or decreasing again, the 4th lattice constant that is had with surface, convergence resilient coating district, and make the lattice constant of the 4th lattice constant and second luminous component, the first type bond course slightly close.
Description of drawings
Fig. 1 and Fig. 2 are section of structure and the luminous schematic diagrames that shows known white light emitting diode.
Fig. 3 and Fig. 4 are section of structure and the luminous schematic diagrames that shows another known white light emitting diode.
Fig. 5 is a preferred embodiment section of structure that shows the white light emitting diode structure according to the present invention.
Fig. 6 is the white light emitting diode profile that shows according to a preferred embodiment of the present invention.
Fig. 7 is the white light emitting diode profile that shows according to another preferred embodiment of the present invention.
Fig. 8 is another preferred embodiment section of structure that shows the white light emitting diode structure according to the present invention.
The figure number explanation:
12-crystal grain; 13,15-metal pin;
The 14-fluorescent material; The 16-encapsulating material;
The 17-groove; The 21-diode;
22-builds the trichite luminescent material; 23,25-metal pin;
24-zinc impregnation selenium substrate; The 26-encapsulating material;
The 100-substrate; The 110-first resilient coating district;
120-first luminous component;
The 122-first luminous component first type bond course;
The 124-first luminous component active layer;
The 126-first luminous component second type bond course;
130-resilient coating district; 140-second luminous component;
The 142-second luminous component first type bond course;
The 144-second luminous component active layer 124;
The 146-second luminous component second type bond course;
The 150-second resilient coating district; 200-first conductive electrode;
300-second conductive electrode; C1-first lattice constant;
C2-second lattice constant; C3-the 3rd lattice constant;
C4-the 4th lattice constant;
The electroluminescence of E-diode; The light of B-blue wavelength;
The light that the F-fluorescent material is excited and produces;
The light of Y-yellow wavelengths.
Embodiment
White light-emitting diode of the present invention mainly is to utilize single light-emitting diode to send the light that blue light involves yellow wavelengths, so as to synthetic white light.Basically, if desire, then generally be to adopt wavelength to be about the blue light of 430nm and the sodium yellow that wavelength is about 560nm with two kinds of different main crest synthesize white lights.
Below please cooperate white light emitting diode section of structure, to describe the present invention in detail with reference to Fig. 5.
White light emitting diode structure one of the present invention preferred embodiment, please refer to Fig. 5, can comprise at least: a substrate 100, one first luminous component, the first type bond course 122 are formed on this substrate 100, one first luminous component active layer 124 and one first luminous component, the second type bond course 126 are formed on above-mentioned first luminous component, the first type bond course 122 in regular turn, and first luminous component, the first type bond course 122, the first luminous component active layer 124 and first luminous component, the second type bond course 126 constitute first luminous component 120.
One resilient coating district 130 is formed on above-mentioned first luminous component, the second type bond course 126, and this resilient coating district 130 can be made of one or more layers of resilient coating.One second luminous component, the first type bond course 142, one second luminous component active layer 144 and one second luminous component, the second type bond course 146 are formed in the above-mentioned resilient coating district 130 in regular turn, and second luminous component, the first type bond course 142, the second luminous component active layer 144 and second luminous component, the second type bond course 146 constitute second luminous component 140.When electric current passed through first luminous component 120, the first luminous component active layer 124 sent the light of one first wavelength, and when electric current passed through second luminous component 140, the first luminous component active layer 144 sent the light of one second wavelength.When mixing with the light of second wavelength, the light of first wavelength can obtain white light.
Above-mentioned structure can comprise more that the lattice constant that makes resilient coating district 130 presents gradient (grading) and changes, in a preferred embodiment, can make the lattice constant of 130 bottoms, resilient coating district and first lattice constant (C1) that first luminous component, the second type bond course, 126 surfaces have close, and the lattice constant in resilient coating district 130 gradually changes, and makes the lattice constant on 130 surfaces, resilient coating district be comparable to one second lattice constant (C2) that second luminous component, the first type bond course, 142 bottoms are had.The letter speech, the lattice constant in resilient coating district 130 is to change to second lattice constant (C2) gradually by first lattice constant (C1).Wherein, the graded of the lattice constant in resilient coating district 130 for example can be by the proportion of composing of adjusting the resilient coating district to reach.
White light emitting diode of the present invention is to have one second conductive electrode 300 to do with second luminous component, the second type bond course 146 of above-mentioned white light emitting diode structure and electrically contact, and have one first conductive electrode 200 and do with the substrate 100 of above-mentioned white light emitting diode structure and electrically contact, please refer to Fig. 6, is the white light emitting diode that shows a preferred embodiment.In some preferred embodiment, its first conductive electrode 200 of white light emitting diode of the present invention also can be and is formed in first luminous component, first shape bond course or the resilient coating district, first conductive electrode and first luminous component, the first shape bond course or resilient coating district are formed to electrically contact, please refer to Fig. 7, is the white light emitting diode that shows another preferred embodiment.Above-mentioned and substrate form first conductive electrode that electrically contacts, and can be metallic contact, metal level, metal pin or anyly can lead platform (contact) as the electricity of diode electrode contact jaw, but herein for simplicity of illustration, only represent with electrode tips.
Below cooperate again, illustrate and be applicable to each layer material combination of the present invention with reference to Fig. 5.
Example 1: with reference to shown in Figure 2, substrate 100 can be GaAs (GaAs), gallium phosphide (GaP), silicon (Si) or carborundum (3C-sic), it is compound that above-mentioned first luminous component, the first type bond course 122 can be AlGaInP (AlGaInP), it is compound that the above-mentioned first luminous component active layer 124 can be AlGaInP (AlGaInP), it is compound that above-mentioned first luminous component, the second type bond course 126 can be AlGaInP (AlGaInP), and its surface has one first lattice constant C1.Above-mentioned resilient coating district 130 can be one by B
xGa
(1-x)First resilient coating and one that P constituted is by In
yGa
(1-y)Second resilient coating that N constituted, wherein 0≤x≤1,0≤y≤1, and second resilient coating is that to be formed at first resilient coating adjacent with second luminous component, first type bond course bottom.Above-mentioned x can be by 0 to 1, so that the lattice constant of 130 bottoms, resilient coating district is close with the first lattice constant C1 and make first resilient coating close with the lattice constant of second resilient coating of bordering on.
And above-mentioned second luminous component, the first type bond course can be aluminum indium gallium nitride (AlGaInN) is compound, and its surface has one first lattice constant C1.Above-mentioned y can be by 0 to 1, so that the lattice constant on 130 surfaces, resilient coating district is close with the second lattice constant C2 and make second resilient coating close with the lattice constant of first resilient coating of bordering on.It is compound that the above-mentioned second luminous component active layer can be aluminum indium gallium nitride (AlGaInN), and above-mentioned second luminous component, the second type bond course to can be aluminum indium gallium nitride (AlGaInN) be compound.
When electric current passes through first luminous component 120, by AlGaInP (AlGaInP) is the light (the about 560nm of wavelength) that the first luminous component active layer 124 that compound constitutes can send a yellow wavelengths, and when electric current when second luminous component 140, be the light (the about 430nm of wavelength) that the second luminous component active layer 144 that compound constitutes can send a blue wavelength by aluminum indium gallium nitride (AlGaInN).When mixing naturally with the light of blue wavelength, the light of yellow wavelengths can obtain white light.
The white light emitting diode that the present invention is above-mentioned, between above-mentioned white light emitting diode structure is except that first luminous component and second luminous component, comprise one second resilient coating district, between its substrate and first luminous component, more can comprise one first resilient coating district, please refer to Fig. 8.Aforesaid white light emitting diode structure can comprise at least: a substrate 100, one first resilient coating district 110, one first luminous component, the first type bond course 122 are formed on this first resilient coating district 110, one first luminous component active layer 124 and one first luminous component, the second type bond course 126 are formed on above-mentioned first luminous component, the first type bond course 122 in regular turn, one second resilient coating district 150 is formed on above-mentioned first luminous component, the second type bond course 126, and this second resilient coating district 150 can be made of one or more layers of resilient coating.One second luminous component, the first type bond course 142, one second luminous component active layer 144 and one second luminous component, the second type bond course 146 are formed in the above-mentioned second resilient coating district 150 in regular turn.
Above-mentioned structure can make the lattice constant in the first resilient coating district 110 present gradient (grading) variation, in a preferred embodiment, first lattice constant (C1) that the lattice constant in the first resilient coating district 130 is had by substrate 100 changes to second lattice constant (C2) that first luminous component, the first type bond course 122 is had gradually; Can make the lattice constant in the second resilient coating district 150 change to the 4th lattice constant (C4) that second luminous component, the first type bond course 142 is had gradually by the 3rd lattice constant (C3) that first luminous component, the second type bond course 126 is had
Below cooperate again, illustrate the present invention and be applicable to each layer material combination of the present invention with reference to Fig. 7.
Example 2: with reference to shown in Figure 7, substrate 100 can be silicon (Si) or carborundum (3c-sic), and it has one first lattice constant C1.Forming 110, the first resilient coating districts 110, one first resilient coating district in above-mentioned substrate can be for by B
nGa
(1-n)First resilient coating and In that P constituted
mGa
(1-m)Second resilient coating that N constituted constitutes, wherein 0≤n≤1,0≤m≤1.Above-mentioned n can be by 0 to 1, so that the lattice constant of 110 bottoms, the first resilient coating district is close with the first lattice constant C1 and make first resilient coating close with the lattice constant of second resilient coating of bordering on.Form one first luminous component, the first type bond course 122 in the first resilient coating district 110, its surface has one second lattice constant C2.Above-mentioned m can be by 0 to 1, so that the lattice constant on 110 surfaces, the first resilient coating district is close with the second lattice constant C2 and make second resilient coating close with the lattice constant of first resilient coating of bordering on.It is compound that first luminous component, the first type bond course 122 can be aluminum indium gallium nitride (AlGaInN).With the above-mentioned first resilient coating district 110 is etching stopping layer, and above-mentioned first luminous component of the selective etch first type bond course 122 with the above-mentioned first resilient coating district 110 of exposed portions serve, and forms one first conductive electrode 200 on its part surface.
Form one first luminous component active layer 124 on above-mentioned first luminous component, the first type bond course 122, it is compound that the first luminous component active layer 124 can be aluminum indium gallium nitride (AlGaInN).Form one first luminous component, the second type bond course 126 on the first luminous component active layer 124, it is compound that first luminous component, the second type bond course 126 can be aluminum indium gallium nitride (AlGaInN), and its surface has one the 3rd lattice constant C3.Then, form one second resilient coating 150 on first luminous component, the second type bond course 126.The above-mentioned second resilient coating district comprises one by In
yGa
(1-y)First resilient coating and one that N constituted is by In
xGa
(1-x)Second resilient coating that P constituted, wherein 0≤x≤1,0≤y≤1, and first resilient coating be formed under second resilient coating adjacent with first luminous component, the second type bond course 126.Above-mentioned y can be by 0 to 1, so that the lattice constant of 150 bottoms, the second resilient coating district is close with the 3rd lattice constant C3 and make first resilient coating close with the lattice constant of second resilient coating of bordering on.
Forming one second luminous component, the first type bond course 142 in the above-mentioned second resilient coating district 150, is compound and above-mentioned second luminous component, the first type bond course 142 can be AlGaInP (AlGaInP), and its surface has one the 4th lattice constant C4.Above-mentioned x can be by 0 to 1, so that the lattice constant on 150 surfaces, the second resilient coating district is close with the 4th lattice constant C4 and make second resilient coating close with the lattice constant of first resilient coating of bordering on.Form the second luminous component active layer 144 and second luminous component, the second type bond course 146 in regular turn on second luminous component, the first type bond course 142, it is compound that the second luminous component active layer 144 can be aluminum indium gallium nitride (AlGaInN), is compound and second luminous component, the second type bond course 146 can be aluminum indium gallium nitride (AlGaInN).Form one second conductive electrode 300 on above-mentioned second luminous component, the second type bond course, 146 part surfaces.
When electric current passes through first luminous component 120, by aluminum indium gallium nitride (AlGaInN) is the light (the about 430nm of wavelength) that the first luminous component active layer 124 that compound constitutes can send a blue wavelength, and when electric current when second luminous component 140, be the light (the about 560nm of wavelength) that the second luminous component active layer 144 that compound constitutes can send a yellow wavelengths by AlGaInP (AlGaInP).When mixing naturally with the light of blue wavelength, the light of yellow wavelengths can obtain white light.
Below explanation forms B
nGa
(1-n)P is as a preferred embodiment of resilient coating.At first, substrate can be earlier with suitable chemical solution cleans, then at H
2Under the atmosphere, substrate is heated to proper temperature, for example 900-1180 ℃, be preferably 1030 ℃, utilize the halide gas phase to build brilliant method (halide vaporphase epitaxy), with H
2As carrying gas (carrier gas), boron chloride (BCl
3), trimethyl gallium (trimethyl gallium; TMG) with phosphorus chloride (PCl
3) or boron chloride (BCl
3), trimethyl gallium (trimethyl gallium; TMG) with hydrogen phosphide (PH
3) as predecessor.Carry out high temperature phosphorization boron layer crystalline substance of heap of stone up and down for about 1000 ℃ in temperature, reacted about 60 minutes, its thickness is about 4560nm.
By the content ratio that changes each predecessor, to form the multilayer stack layer B of different proportion of composing
nGa
(1-n)P makes lattice constant present graded.The formed B of the method
nGa
(1-n)The P resilient coating is to be high temperature B
nGa
(1-n)The P resilient coating.Yet the present invention also can be in this high temperature B
nGa
(1-n)One low temperature phosphor boron (BP) resilient coating is set between P resilient coating and the substrate, and this low temperature phosphor boron (BP) resilient coating is to form under about 300 ℃ of temperature.
And resilient coating In
yGa
1-yN can utilize the MOVCVD method to make, for example with trimethyl indium (trimethyindium; TMIn), trimethyl gallium (trimethyl gallium; TMG) and NH
3For predecessor forms, by the content ratio that changes each predecessor, to form the multilayer stack layer In of different proportion of composing
yGa
1-yN.
Moreover, resilient coating In
xGa
1-xP can utilize the MOVCVD method to make, for example with trimethyl indium (trimethy indium; TMIn), trimethyl gallium (trimethyl gallium; TMG) and hydrogen phosphide (PH
3) for predecessor forms, by the content ratio that changes each predecessor, to form the multilayer stack layer In of different proportion of composing
xGa
1-xP.
Below explanation forms a better embodiment of the first type bond course.Formation AlGaInP (AlGaInP) is that the predecessor of compound can comprise trimethyl aluminium ((CH
3)
3Al), trimethyl gallium ((CH
3)
3Ga) with trimethyl indium ((CH
3)
3In) and hydrogen phosphide (PH
3) to be used as unreacted material, to form aluminum indium gallium nitride (AlGaInN) be that the predecessor of compound can comprise trimethyl aluminium ((CH
3)
3Al), trimethyl gallium ((CH
3)
3Ga) with trimethyl indium ((CH
3)
3In) and nitrogenize hydrogen (NH
3) be used as unreacted material, utilizing the mocvd method that reduces pressure to form AlGaInP is compound.Supply H during reaction
2With N
2Gas, temperature for example are about under 500-800 ℃, can use diethyl zinc ((C
2H
5)
2Zn) be used as the doping source of zinc, or use hydrogen selenide (H
2Se) be used as the reaction material of alloy.
In addition, active layer can utilize the MOVCVD method equally, for example with trimethyl aluminium (trimethyaluminum; TMAl), trimethyl indium (trimethy indium; TMIn), trimethyl gallium (trimethyl gallium; TMG) and nitrogenize hydrogen (NH
3) (or hydrogen phosphide (PH
3)) for predecessor forms, supply H during reaction
2With N
2Gas, temperature for example are about under 500-800 ℃.The preferably can be by the content ratio that changes each predecessor, to form the multilayer stack layer of different proportion of composing.
It is compound that the second type bond course for example can form AlGaInP (AlGaInP), and predecessor can comprise trimethyl aluminium ((CH
3)
3Al), trimethyl gallium ((CH
3)
3Ga) with trimethyl indium ((CH
3)
3In) and hydrogen phosphide (PH
3) be used as unreacted material, or to form aluminum indium gallium nitride (AlGaInN) be compound, and predecessor can comprise trimethyl aluminium ((CH
3)
3Al), trimethyl gallium ((CH
3)
3Ga) with trimethyl indium ((CH
3)
3In) and nitrogenize hydrogen (NH
3) be used as unreacted material, utilizing the mocvd method that reduces pressure to form AlGaInP is compound.Supply H during reaction
2With N
2Gas, temperature for example are about under 500-800 ℃, can for example be doping to p type conductivity with magnesium (Mg), perhaps for example are doping to n type conductivity with sulphur (S).
According to white light emitting diode of the present invention and manufacture method thereof, the present invention has following advantage:
1. white light-emitting diode of the present invention is can send two wavelength behind the galvanization of diode own Light, mix afterwards again and can obtain white light, need not combined with fluorescent material or other exciting media, therefore Can not affect because of the life-span of fluorescent material or other exciting media the performance of diode.
2. white light emitting diode two luminous components of the present invention all are formed on single the diode, Be single-chip (single chip) type white light emitting diode, the drive circuit design need not borrowed easily By many light emitting diodes of combination, can reduce production costs widely, and reduce packing and circuit control The difficulty of system.
3. owing to be used for being mixed into the wavelength of white light and all sent voluntarily by white light emitting diode itself, and The light emission color temperature of diode is difficult for changing along with service time, and luminous efficiency easily mates, so The optical wavelength of white light emitting diode of the present invention is easy to control, can be as utilizing the exciting media gained Diode, its optical wavelength easily increases (minimizing) with temperature or operating voltage and changes.
4. white light emitting diode of the present invention, it utilizes different substrate (conduction or non-conductive all can) Upper formation white light emitting diode, being different from known white light emitting diode can only be anchoring base shape The technology that becomes, and can utilize cushion not reduce in the diode assembly lattice between each epitaxial layer not Join (lattice mismatch), the lattice between each epitaxial layer is mated more, to reduce by two utmost points Manage the line defect in the assembly, the white light emitting diode of the perfect degree of crystallinity of tool is provided.
Claims (8)
1. white light emitting diode, it comprises at least:
One first conductive electrode;
One substrate electrically contacts with above-mentioned first conductive electrode formation;
One first luminous component, the first type bond course, one first luminous component active layer and one first luminous component, the second type bond course are formed in the above-mentioned substrate in regular turn, and constitute first luminous component;
One first resilient coating district is formed on above-mentioned first luminous component, the second type bond course, and this first resilient coating district is made of one or more layers of resilient coating;
One second luminous component, the first type bond course, one second luminous component active layer and one second luminous component, the second type bond course are formed in the above-mentioned first resilient coating district in regular turn, and constitute second luminous component; And
One second conductive electrode and above-mentioned second luminous component, the second type bond course form and electrically contact,
When adding a current potential when being worse than between second conductive electrode stream and this first conductive electrode, produce an electric current, this electric current passes through second luminous component, resilient coating district, reaches first luminous component, make this first luminous component active layer send the light of first wave-length coverage, the light that this second luminous component active layer sends second wave-length coverage, and obtain white light by the light of this first wave-length coverage and the light mixing of second wave-length coverage.
2. more there is one second resilient coating in white light emitting diode according to claim 1 between wherein above-mentioned substrate and above-mentioned first luminous component, the first type bond course.
3. white light emitting diode according to claim 2, the face that connects the up and down lattice constant of wherein above-mentioned first resilient coating and above-mentioned second resilient coating are matched with the lattice constant of the above-mentioned first luminous component second type bond course surface, above-mentioned second luminous component, first type bond course bottom, above-mentioned substrate surface and above-mentioned first luminous component, first type bond course bottom respectively.
4. white light emitting diode according to claim 1, wherein
Above-mentioned substrate comprises GaAs (GaAs), GaAs (GaAs), gallium phosphide (GaP), silicon (Si) or carborundum (3C-sic);
Above-mentioned first luminous component and second luminous component comprise that AlGaInP (AlGaInP) is a compound; And
The above-mentioned first or second resilient coating district comprises one by B
xGa
(1-x)P and In
yGa
(1-y)N constitutes, wherein 0≤x≤1,0≤y≤1.
5. a preparation method of white light LBD comprises the following steps: at least
One substrate is provided, and it contacts with one first conductive electrode;
Form one first luminous component, the first type bond course, one first luminous component active layer and one first luminous component, the second type bond course in regular turn in above-mentioned substrate, to constitute first luminous component;
Form a resilient coating district on above-mentioned first luminous component, the second type bond course;
Form one second luminous component, the first type bond course, one second luminous component active layer and one second luminous component, the second type bond course in regular turn in above-mentioned resilient coating district, to constitute second luminous component; And
Form one second conductive electrode on above-mentioned second luminous component, the second type bond course part surface.
6. according to the described preparation method of white light LBD of claim 5, more there is one second resilient coating between wherein above-mentioned substrate and above-mentioned first luminous component, the first type bond course.
7. according to the described preparation method of white light LBD of claim 6, the face that connects the up and down lattice constant of wherein above-mentioned first resilient coating and above-mentioned second resilient coating is matched with the lattice constant of the above-mentioned first luminous component second type bond course surface, above-mentioned second luminous component, first type bond course bottom, above-mentioned substrate surface and above-mentioned first luminous component, first type bond course bottom respectively.
8. according to the described preparation method of white light LBD of claim 5, wherein
Above-mentioned substrate comprises GaAs (GaAs), GaAs (GaAs), gallium phosphide (GaP), silicon (Si) or carborundum (3C-sic);
Above-mentioned first luminous component and second luminous component comprise that AlGaInP (AlGaInP) is a compound; And
The above-mentioned first or second resilient coating district comprises one by B
xGa
(1-x)P and In
yGa
(1-y)N constitutes, wherein 0≤x≤1,0≤y≤1.
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| CNA031214347A CN1534801A (en) | 2003-03-27 | 2003-03-27 | White luminuous diode and its manufacturing method |
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| CNA031214347A CN1534801A (en) | 2003-03-27 | 2003-03-27 | White luminuous diode and its manufacturing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569662A (en) * | 2005-05-20 | 2012-07-11 | 株式会社半导体能源研究所 | Light emitting element, light emitting device, and electronic device |
-
2003
- 2003-03-27 CN CNA031214347A patent/CN1534801A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569662A (en) * | 2005-05-20 | 2012-07-11 | 株式会社半导体能源研究所 | Light emitting element, light emitting device, and electronic device |
| CN102569662B (en) * | 2005-05-20 | 2015-01-28 | 株式会社半导体能源研究所 | Light emitting element, light emitting device, and electronic device |
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