CN1527134A - Manufacture of ture 3D microelectronic mechanical system based on composite imprinting photoetched material - Google Patents
Manufacture of ture 3D microelectronic mechanical system based on composite imprinting photoetched material Download PDFInfo
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- CN1527134A CN1527134A CNA031345964A CN03134596A CN1527134A CN 1527134 A CN1527134 A CN 1527134A CN A031345964 A CNA031345964 A CN A031345964A CN 03134596 A CN03134596 A CN 03134596A CN 1527134 A CN1527134 A CN 1527134A
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Abstract
The present invention is the manufacture of true 3D MEMS device based on composite imprinting photoetched material. The MEMS device is manufactured through decomposing its CAD model into cross section thin layers based on the laminated manufacture thought in fast formation. During the manufacture of quartz template bearing the cross section layer pattern of the MEMS device, scanning probe microscopic micro carving and dry plasma etching technology is adopted. The thin layers of the MEMS device is obtained through CVD/chemical plating/double component painting, centrifugal glue homogenizing, controlled imprinting photoresist painting on the thin layers, imprinting photoetching and plasma etching to form single layers of MEMS device and CMP to determine thin layer thickness. The present invention makes it possible to realize the mass production of MEMS device.
Description
Technical field
The invention belongs to micromechanics and make the field, relate to the true three dimensional microelectronic mechanical system of a kind of compound substance manufacture method, i.e. three-dimensional MEMS device micro-embossing photoetching technique (ImprintLithography-IL) based on imprint lithography.
Background technology
Microelectromechanical systems (to call MEMS in the following text) technology and MEMS product at home and abroad numerous areas have obtained deep development.As various microsensors, micromotor, microdrive, Micro-Robot, light path switch and follow-on IMEMS product etc.These products have been widely used in aspects such as biological doctor's electricity, automobile, communication, military affairs, daily life even.We can say the leading pillar of the strong point of IT industry, national economy and to weigh the military power of a country all closely bound up in the development of MEMS to a certain extent.
Represent the mainstream technology of MEMS development mainly to concentrate on the U.S., Japan and European in the world.Over nearly 20 years, the U.S. develops the most outstanding aspect the MEMS micro-processing technology, and many brand-new technology paths are proposed.As the optimization horizontal wet etching of IBM Watson center at the metalwork of the proposition eighties in 20th century, the quasi-molecule that the Almaden research centre proposes melts etching industry.In order to solve littleizationr of micro-machined features size, the IC technology combines with micromachining technology becomes the new technology path of pursuing abroad, carry out in a deep going way in states such as Germany, Canada, Israel as introduce the laser direct-writing technology that is used for the large scale integrated circuit manufacturing process in the MEMS technology path, particularly outstanding is the programmable phase modulated laser straight-writing system of German fraunhofer microelectronics research centre development.For realizing very three-dimensional micro mechanical structure, processing technologys such as Laser Processing, electrosparking, I.B.M., microwave processing also become new MEMS technology path, wherein Tokyo Univ Japan's He-Cd laser light source adopts rapid shaping (RP) technology to realize horizontal accuracy 2 μ m resin material microstructures.The material aspect, just be not limited to monocrystalline silicon, but develop towards multiple material aspect according to performance and the requirement that microstructure will reach, successfully realized the local electroplating of metals such as Au, Cu, Ni as R.J.Von Gutfeld etc., H.W.Lee etc. make initial compounds with the triisobutyl aluminium of liquid state, realize the metal aluminum steel with laser direct-writing.Simultaneously, intelligentized MEMS structure has become the main development trend of present microsensor, little detent, little detecting device etc., and the integrated of IC and MEMS will produce brand-new manufacturing process route.
The domestic MEMS research of being engaged in has static, voltage and electromagnetic motor, Micropump and little valve and piezoelectricity and memorial alloy micro-clamp etc.; Also done certain work at aspects such as basic theory (IC, LIGA, EDN and milli machine processing etc.) and basic materials.Directly melt the photoresist that is used for the deep layer photoetching as usefulness KrF excimer laser (248nm) such as Shen Beijun, Wang Runwen, Wang Liding, make laser LIGA micro fabrication compatible mutually with integrated circuit fabrication process; The constraint etch layer galvanochemistry micro-processing technology that is used for the processing of complex three-dimensional ultra micro graph copying that Xiamen University's Tian Zhaowu proposes; The Sun Li of Harbin Institute of Technology is peaceful propose be used for the micro-machined five degree of freedom microposition of three-dimensional electrochemical system; The laser LIGA process technology of the three-dimensional structure that Beijing University of Technology's left side iron bracelet proposes; What the Zhang Haijun of Zhejiang University, Huang Feng proposed leads the galvanochemistry Micrometer-Nanometer Processing Technology of microscopy based on the scan ion electricity; Institute of Chemistry, Academia Sinica's ten thousand upright fine horse, the electro-chemical systems of propositions such as Wang Chen, Bai Chunli and galvanochemistry Scanning Probe Microscopy that the scanning probe microscopy technology combines; The two step etch polysilicons that Microelectronic Institute of Tsing-Hua University adopts improve the figure steepness.All things considered, all these methods all rely on expensive projection lithography technology, and are confined to accurate three-dimension device.
Both at home and abroad about MEMS Study on Technology and application, be basically at present, and can only make the MEMS device of homogenous material (as silicon), two dimension half based on the IC manufacturing technology.The MEMS manufacture method that the application taked is the imprint lithography techniques (IL) that adopts in the IC manufacturing.The IL principle is to be proposed in the mid-90 by Univ Minnesota-Twin Cities USA the earliest, and passes through the constantly perfect of process program, can impress out the fine pattern (pattern) of 0.05 μ m～0.01 μ m now on the area of 10 * 10mm.Harvard University is from over 1997, and a research group continues to be engaged in the research, impresses out 0.03 μ m live width, the dark rill of 0.05 μ m, but and the demoulding.The applicant has since two thousand begun the research of IL technology, realized the impression etching of 0.5 μ m～0.35 μ m feature, obtained satisfied stamp quality, and begun the design and the manufacturing of imprint process experimental prototype machine, so that carry out more high-resolution impression test.
Summary of the invention
The objective of the invention is to, propose the true three-dimensional MEMS device making method of a kind of compound substance, and the gordian technique of the composite molding technique of the materialization of the relevant impression of this method and releasing process mechanism, ultraviolet light polymerization resistance erosion glue material and operational characteristic, poly-material structure MEMS device etc. is studied and technological development based on imprint lithography.
The technical solution that realizes the foregoing invention purpose is, based on the true three-dimensional MEMS device making method of the compound substance of imprint lithography, adopts the layering in the rapid shaping to make thought, MEMS device cad model is decomposed into one by one cross section thin layers makes; Generate mask file with its cross section geometric; Employing scanning probe microscopy (SPM-also claims atomic force microscope AFM) carries out miniature carving and in conjunction with the plasma deep dry etch process, generates the quartz template of a certain cross-sectional layers pattern of carrying MEMS device on the corrosion inhibitor of quartz surfaces; Be coated with the shop by CVD/ electroless plating/pair component and generate MEMS base material thin layer, and after being coated with shop photocuring corrosion inhibitor thereon, the individual layer that adopts imprint lithography and plasma etching industrial to finish the MEMS device is shaped; Adopt the CVD/ electroless plating technology to deposit the low-melting alloy layer more thereon, obtain the thickness of thin layer of determining by chemically mechanical polishing (CMP) as supporter; In the molding process of three-dimension device, adopt the positive principle of grating pair to guarantee the relative positional accuracy of multilayer alignment; Repeat above-mentioned part technology and realize that by stacked system successively the batch of true three-dimensional MEMS device is shaped, down will low-melting alloy wherein separate at 80 ℃ again and remove, can obtain the finished product of device.
The present invention adopts the advantage of IL technology just to be that it is an exhausted favourable technology path of realizing that MEMS produces in batches in the MEMS manufacturing process.For IC, it has not been difficult point technically that IL is adopted in large-sized MEMS device manufacturing, and the efficient and self-reparing capability in the figure transfer process of IL is that conventional lithography process institute is incomparable.In addition, make for the very three-dimensional of MEMS device, the technology used in the present invention route is based on the IL technology, and the layered material that the while is finished the MEMS device in conjunction with chemical vapor deposition (CVD) and chemical Mechanical Polishing Technique (CMP) is coated with shop, imprint lithography.Wherein the impression block of IL employing is to obtain in conjunction with plasma etching by SPM.Therefore, the attainable target of above technology path is as follows: the impression etching replaces traditional projection lithography to realize low cost; Large form or the multi-template imprint lithography that walks abreast is to solve the problem that MEMS makes in batches; Adopt mature C VD and CMP technology to realize the manufacturing of the true three-dimensional MEMS device that multiple material is compound; Adopt SPM to realize the manufacturing of impression block in conjunction with plasma etching technology; The true three-dimensional MEMS device making method of compound substance based on imprint lithography of the present invention, the mode of digestion foreign technology is followed in domestic employing different from the past, the restriction abroad and the problem of restriction have been avoided being subjected to greatly at aspects such as technology introduction, equipment importation, staff trainings, make China within a certain period of time near becoming possibility, realize the great-leap-forward development of the autonomous manufacturing technology of China MEMS device with the MEMS manufacturing technology of catching up with external advanced person.
Description of drawings
Fig. 1 is a general technical schematic diagram of the present invention.
Fig. 2 is overall preparation flow figure of the present invention.Wherein scheme a, b, c for generating the quartz template synoptic diagram of a certain cross-sectional layers pattern of carrying MEMS device; Figure d is for being coated with the thin layer synoptic diagram that the shop obtains the MEMS device substrate by CVD/ electroless plating/pair component; Figure g, h make the curing of a certain layer pattern of the MEMS device on the photocuring thin layer for utilizing ultraviolet light transmission quartz template, and throw off the quartz template synoptic diagram; Figure e is for finishing the controlled shop synoptic diagram that is coated with of impression resistance erosion glue on the thin layer of MEMS device substrate; Figure f is for utilizing the quartzy motherboard of a certain layer pattern transoid that has been carved with the MEMS device, matched moulds impression normal temperature photocuring corrosion inhibitor thin layer synoptic diagram; Figure k is a CVD/ electroless plating low-melting alloy synoptic diagram; Fig. 1 obtains definite thickness of thin layer synoptic diagram for machinery cuts open light (CMP); Figure m is that CVD/ electroless plating/pair component is coated with following one deck synoptic diagram that the shop obtains compound substance; Figure n is for repeating one deck compound substance synoptic diagram under the above-mentioned technology etching; Figure o is the finished product synoptic diagram of device.
Embodiment
The embodiment that provides below in conjunction with accompanying drawing and inventor is further described the present invention.
According to the technical scheme that the present invention proposes, its general technical schematic diagram is referring to Fig. 1, and overall preparation flow as shown in Figure 2.Be the technology case with the mini sprinkler now, the invention will be further described.
1.. make data and prepare and little quartz template preparation:
MEMS device cad model is decomposed into cross section thin layers one by one, generates mask file with its cross section geometric; Employing scanning probe microscopy (SPM-also claims atomic force microscope AFM) carries out miniature carving and in conjunction with the plasma deep dry etch process, generates the quartz template (seeing figure a, b, c) of a certain cross-sectional layers pattern of carrying MEMS device on the corrosion inhibitor of quartz surfaces.
2.. three-dimensional MEMS device micro-embossing manufacturing process:
1) by CVD/ electroless plating/pair component be coated with the shop obtain the MEMS device substrate thin layer (the shop mode that is coated with of each layer with obtain to such an extent that material can be different, can obtain the MEMS device of thickening degree, compound substance like this), the thickness of thin layer and the discrete lift height consistent (seeing figure d) of front three-dimensional MEMS device;
2) the centrifugal even adhesive process on the employing current I C production line, the controlled shop (seeing figure e) that is coated with of on the thin layer of MEMS device substrate, finishing impression resistance erosion glue;
3) the quartzy motherboard of a certain layer pattern transoid of MEMS device has been carved with in utilization, and matched moulds impression normal temperature photocuring corrosion inhibitor thin layer makes a certain layer pattern of MEMS device shift (seeing figure f) on photocuring corrosion inhibitor thin layer;
4) utilize ultraviolet light transmission quartz template, make the curing of a certain layer pattern of the MEMS device on the photocuring thin layer, and throw off quartz template (seeing figure g, h);
5) adopt the plasma deep dry etch process to remove not by the excess stock of the MEMS device substrate thin layer of corrosion inhibitor pattern covers, corrosion washes corrosion inhibitor, obtains certain one deck of MEMS device;
6) have CVD/ electroless plating low-melting alloy (about 80 ℃ of fluxing temperatures) on the MEMS device substrate thin layer of pattern, cuing open light (CMP) by chemical machinery and obtain definite thickness of thin layer (seeing figure k, l) as propping material;
Repeat above-mentioned technology realizes true three-dimensional composite material MEMS device by stacked system successively batch moulding.Device after the moulding separates removal with low-melting alloy wherein under 80 ℃ of temperature, can obtain the finished product (seeing figure m, n, o) of device.
Photocuring corrosion inhibitor material is the photosensitive cured resin section bar of a macromolecule material, have good film speed, lower physical viscosity and low cure shrinkage and solidify after have appropriateness the etching ratio.
Claims (5)
1. based on the true three dimensional microelectronic mechanical system of the compound substance of imprint lithography manufacture method, adopt the layering in the rapid shaping to make thought, the microelectromechanical systems cad model is decomposed into one by one cross section thin layers makes; It is characterized in that, may further comprise the steps:
1) MEMS device cad model is decomposed into cross section thin layers one by one, generates mask file with its cross section geometric;
2) the employing scanning probe microscopy carries out miniature carving and in conjunction with the plasma deep dry etch process, generates the quartz template of a certain cross-sectional layers pattern of carrying MEMS device on the corrosion inhibitor of quartz surfaces, is carved with MEMS device cross section geometric figure on the quartz template;
3) be coated with the shop by chemical vapor deposition (CVD)/electroless plating/pair component and generate microelectromechanical systems base material thin layer, and after being coated with shop photocuring corrosion inhibitor on the base material thin layer, the individual layer that adopts imprint lithography and plasma etching industrial to finish the MEMS device is shaped;
4) the residual resistance erosion of removal glue, and on individual layer is shaped, adopt the CVD/ electroless plating technology to deposit the low-melting alloy layer again as supporter, and obtain definite thickness of thin layer by chemically mechanical polishing;
5) in the molding process of three-dimension device, adopt the positive principle of grating pair to guarantee the relative positional accuracy of multilayer alignment;
6) repeat above-mentioned steps 2) to 5), realize that by stacked system successively the batch of true three-dimensional MEMS device is shaped, down will low-melting alloy layer wherein separate at 80 ℃ again and remove, obtain the finished product of device.
2. the true three dimensional microelectronic mechanical system of the compound substance based on imprint lithography as claimed in claim 1 manufacture method, it is characterized in that, be carved with MEMS device cross section geometric figure on the described quartz template, earlier on the corrosion inhibitor that is coated with after being laid on quartzy motherboard surface cure, inscribe MEMS device cross section geometric figure during making, adopt the plasma deep dry etch process to generate quartz template then with scanning probe microscopy.
3. the true three dimensional microelectronic mechanical system of the compound substance based on imprint lithography as claimed in claim 1 manufacture method, it is characterized in that, described MEMS base material thin layer is coated with the shop by CVD/ electroless plating/pair component and generates, thickness of thin layer is consistent with the discrete lift height of front three-dimensional MEMS device, what change each layer is coated with shop mode and material, can obtain the MEMS device of thickening degree, compound substance.
4. the true three dimensional microelectronic mechanical system of the compound substance based on imprint lithography as claimed in claim 1 manufacture method, it is characterized in that, described photocuring corrosion inhibitor material is the photosensitive cured resin section bar of a macromolecule material, adopts the centrifugal even adhesive process on the current I C production line to carry out the controlled shop that is coated with when being coated with the shop.
5. the true three dimensional microelectronic mechanical system of the compound substance based on imprint lithography as claimed in claim 1 manufacture method is characterized in that its effect of described low-melting alloy is the support as the MEMS device substrate, and can fuse under 80 ℃ of temperature.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1325368C (en) * | 2005-12-13 | 2007-07-11 | 南京师范大学 | Method for rapid manufacturing three-dimensional complex micro structure |
| CN100403145C (en) * | 2005-01-31 | 2008-07-16 | 中华映管股份有限公司 | Factory production working system and its operating method |
| CN1857990B (en) * | 2006-05-18 | 2010-05-12 | 西安交通大学 | Method for making complicate three dimension microstructure or micro device at low cost |
| CN101293628B (en) * | 2008-04-03 | 2010-08-04 | 华中科技大学 | Process for manufacturing three-dimensional miniature mold |
| CN101060769B (en) * | 2007-01-26 | 2010-08-18 | 刘飞豹 | A method for producing the 3D products suitable for foldable forming |
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2003
- 2003-09-22 CN CN 03134596 patent/CN1218218C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100403145C (en) * | 2005-01-31 | 2008-07-16 | 中华映管股份有限公司 | Factory production working system and its operating method |
| CN1325368C (en) * | 2005-12-13 | 2007-07-11 | 南京师范大学 | Method for rapid manufacturing three-dimensional complex micro structure |
| CN1857990B (en) * | 2006-05-18 | 2010-05-12 | 西安交通大学 | Method for making complicate three dimension microstructure or micro device at low cost |
| CN101060769B (en) * | 2007-01-26 | 2010-08-18 | 刘飞豹 | A method for producing the 3D products suitable for foldable forming |
| CN101293628B (en) * | 2008-04-03 | 2010-08-04 | 华中科技大学 | Process for manufacturing three-dimensional miniature mold |
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| CN1218218C (en) | 2005-09-07 |
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