CN1516295A - Packaging material and its package light-mixed type light-emitting diode device - Google Patents
Packaging material and its package light-mixed type light-emitting diode device Download PDFInfo
- Publication number
- CN1516295A CN1516295A CNA031015069A CN03101506A CN1516295A CN 1516295 A CN1516295 A CN 1516295A CN A031015069 A CNA031015069 A CN A031015069A CN 03101506 A CN03101506 A CN 03101506A CN 1516295 A CN1516295 A CN 1516295A
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- CN
- China
- Prior art keywords
- light
- emitting diode
- coloured light
- encapsulating material
- stimulated luminescence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- Led Device Packages (AREA)
Abstract
The invention discloses a packaging material and light-mixed LED packaged by it. It contains; a basic material and many fluorescent agent's nano particles scattered in the basic material. The LED contains; a blue LED; and a packaging material, which includes a basic material and many fluorescent agent's nano particles scattered in the basic material, wherein the blue LED is packaged in the packaging material.
Description
Technical field
The present invention relates to a kind of encapsulating material in order to packaged semiconductor (chip), relates in particular to this encapsulating material and encapsulates the light-mixed type LED device that a light-emitting diode chip for backlight unit forms.
Background technology
The application of light-emitting diode is rather extensive, for example, can be applicable to optical display, traffic sign, data storage device, communication device, lighting device and medical treatment device.The potential demand amount is maximum and most important in the light-emitting diode, is white light-emitting diode, if can reduce the production cost of white light-emitting diode, and prolongs its useful life, then might replace a large amount of at present white fluorescent lamp or bulbs that use.
A kind of white light-emitting diode bulb is arranged in the market, be to utilize the encapsulating material that is mixed with the fluorescent agent particle, the encapsulation blue LED forms, its principle is the blue-light excited fluorescent agent particle that utilizes blue LED to launch, make the latter produce gold-tinted, and mix original blue light and become white light.
A shortcoming of the white light-emitting diode bulb of this prior art is: the fluorescent agent particle that is mixed in its encapsulating material is of a size of micron order (Micronorder), for example several microns to hundreds of microns, the fluorescent agent particle of this order of magnitude has the deposited phenomenon that is difficult to avoid in encapsulating material, cause white light-emitting diode bulb non-uniform light, even produce and to cover the light emitted line of light-emitting diode chip for backlight unit, and the bad result who causes white light-emitting diode bulb luminous efficiency to reduce.
Another shortcoming of the white light-emitting diode bulb of the prior art is: its fluorescent agent particle is opaque, therefore only be that surfacing has and accepts blue-light excited and produce the effectiveness of gold-tinted, its inner material has only the ill-effect of shield lights, therefore the effective rate of utilization of fluorescent agent material is on the low side, and the ill-effect of shield lights is higher.
Summary of the invention
But a task of the present invention is to provide a kind of encapsulating material that contains the nano material unit of stimulated luminescence to reach the white light emitting diode device that forms with its encapsulation, therefore wherein but the nano material unit of stimulated luminescence does not have deposited phenomenon in encapsulating material, can avoid in the aforementioned prior art shortcomings such as white light-emitting diode bulb non-uniform light and luminous efficiency be bad.
Another task of the present invention is to provide a kind of encapsulating material of fluorescent agent nano material unit and white light emitting diode device that forms with its encapsulation of containing, wherein fluorescent agent nano material unit is because of having quite little size, so white light-emitting diode bulb compared to prior art, can improve the effective rate of utilization of fluorescent agent material, and reduce the ill-effect of its shield lights.
For realizing above each task, a kind of encapsulating material according to one preferred embodiment of the present invention comprises a kind of liquid base material; And many fluorescent agent nano particles, intersperse among in this liquid base material.A LED device according to one preferred embodiment of the present invention comprises a blue LED; And an encapsulating material, comprising a kind of liquid base material and intersperse among many fluorescent agent nano particles in this liquid base material, this blue LED is packaged in this encapsulating material.
Description of drawings
Fig. 1 demonstrates white light emitting diode device according to one preferred embodiment of the present invention in a schematic way.
Description of reference numerals
11 first conducting elements
The 11a protuberance
12 second conducting elements
13 leads
14 encapsulating materials
20 blue led chips
21 substrates
28p type electrode
29n type electrode
Embodiment
At first need explanation, principle of the present invention is: in a kind of basic material that for example comprises epoxy resin, but sneak into the nano material unit that is subjected to produce when blue-light excited many stimulated luminescences of gold-tinted, with the encapsulating material encapsulation blue LED that is obtained, but the yellow light mix that the nano material unit that makes its blue light that produces and these stimulated luminescences is stimulated and is produced, and produce white light.
Encapsulating material according to one preferred embodiment of the present invention, but the nano material unit that wherein comprises many stimulated luminescences, fluorescent agent nano particle for example, the geometry of these fluorescent agent nano particles is spheroidal haply, and its diameter is for example between 5 to 30 nanometers.These fluorescent agent nano particles are sneaked into a kind of liquid-state epoxy resin basic material (after this liquid base material makes; present solid-state also can) in; the epoxy resin composition encapsulating material of many fluorescent agent nano particles that obtained a kind of mode filling with uniformly dispersing haply; suitably select the consumption and the particle size of fluorescent agent nano particle during mixing; make made encapsulating material when the encapsulation blue LED; the blue light that it is launched; reach the gold-tinted that the fluorescent agent nano particle is stimulated and is produced, can obtain desired white light by mixed light.
Aforementioned encapsulating material according to one preferred embodiment of the present invention, available by encapsulation one blue LED in wherein, and obtain according to one preferred embodiment of the present invention a white light emitting diode device, as shown in fig. 1, comprise a blue LED 20, this light-emitting diode 20 comprises and is formed at the gallium nitride based stromatolithic structure that a base is pulled 21 tops, one p type electrode 28, one n type electrode 29, and the encapsulating material 14 that is filled with the fluorescent agent nano particle according to the present invention, p type electrode 28 is connected on the protuberance 11a of one first conducting element 11 via a lead 13, and n type electrode 29 is connected in one second conducting element 12 via a lead 13.
Because the size of the fluorescent agent nano particle in the encapsulating material according to one preferred embodiment of the present invention is for example only between 5 to 30 nanometers, in encapsulating material, there is not deposited phenomenon, and for the fluorescent material of identical weight, according to the fluorescent agent nano particle in the encapsulating material of the present invention, compared to prior art, the utilance of its surperficial fluorescent material stimulated luminescence effect improves, therefore only need the less fluorescent agent particle of quality, can reach the effect of certain gold-tinted that is stimulated, obviously also can reduce the ill-effect of shield lights, thereby can promote the whole lighting efficiency of white light emitting diode device.
The above, only be in order to convenient explanation a kind of encapsulating material according to one preferred embodiment of the present invention and a kind of white light emitting diode device according to one preferred embodiment of the present invention, scope of the present invention is not limited to the preferred embodiment, all any changes of being done according to the present invention all belong to the scope of claim of the present invention.For example, by the size and the consumption of fluorescent agent nano particle in the control encapsulating material, the light-emittingdiode device that packaged material is formed, the light of emission approximate white light, the spirit and the scope that also obviously do not break away from the present invention.Moreover, those skilled in the art should understand principle of the present invention easily and also can be used for making solid-state encapsulating material, but and replace the fluorescent agent nano particle of one embodiment of the present invention with the nano material unit of other stimulated luminescence, do not break away from spirit of the present invention and scope yet.
Claims (12)
1, a kind of encapsulating material comprises:
A kind of basic material; But and the nano material unit of many stimulated luminescences, intersperse among in this basic material, but and wherein the smallest linear dimension of the nano material unit of each stimulated luminescence less than 400 nanometers.
2. according to a kind of encapsulating material of claim 1, but nano material unit that wherein should stimulated luminescence comprises the fluorescent material that is subjected to produce when blue-light excited gold-tinted.
3. according to a kind of encapsulating material of claim 1, but nano material unit that wherein should stimulated luminescence is spheroidal haply, and its diameter is less than 400 nanometers.
4. according to a kind of encapsulating material of claim 1, but nano material unit that wherein should stimulated luminescence is spheroidal haply, and its diameter is between 5 to 30 nanometers.
5. according to a kind of encapsulating material of claim 1, wherein this basic material comprises epoxy resin.
6. according to a kind of encapsulating material of claim 1, wherein this basic material comprises liquid-state epoxy resin.
7. a LED device comprises:
One first coloured light light-emitting diode; And
One encapsulating material, but comprise a kind of basic material and intersperse among the nano material unit of the many stimulated luminescences in this basic material, wherein but the smallest linear dimension of the nano material unit of each stimulated luminescence is less than 400 nanometers, and this first coloured light light-emitting diode is packaged within this encapsulating material, but when making the nano material unit of first coloured light irradiation stimulated luminescence launched at this first coloured light light-emitting diode, can make it launch second coloured light, wherein the wavelength of this first coloured light is short than the wavelength of this second coloured light.
8. according to a kind of encapsulating material of claim 7, but nano material unit that wherein should stimulated luminescence comprises the nanometer fluorescent material that produces this second coloured light when excited by this first coloured light.
9. according to a LED device of claim 7, but nano material unit that wherein should stimulated luminescence is spheroidal haply, and its diameter is less than 400 nanometers.
10, according to a LED device of claim 7, but wherein the nano material unit of this stimulated luminescence is spheroidal haply, and its diameter is between 5 to 30 nanometers.
11. according to a LED device of claim 7, wherein this basic material comprises liquid-state epoxy resin.
12. according to a LED device of claim 7, wherein this first coloured light is blue light, this this second coloured light is gold-tinted.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB031015069A CN1266778C (en) | 2003-01-10 | 2003-01-10 | Packaging material and its package light-mixed type light-emitting diode device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB031015069A CN1266778C (en) | 2003-01-10 | 2003-01-10 | Packaging material and its package light-mixed type light-emitting diode device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1516295A true CN1516295A (en) | 2004-07-28 |
CN1266778C CN1266778C (en) | 2006-07-26 |
Family
ID=34239128
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031015069A Expired - Lifetime CN1266778C (en) | 2003-01-10 | 2003-01-10 | Packaging material and its package light-mixed type light-emitting diode device |
Country Status (1)
Country | Link |
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CN (1) | CN1266778C (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100376963C (en) * | 2004-12-18 | 2008-03-26 | 群康科技(深圳)有限公司 | Backlight module assembly |
CN101661983B (en) * | 2008-08-26 | 2012-03-14 | 富准精密工业(深圳)有限公司 | Light emitting diode (LED) and preparation method thereof |
CN102694110A (en) * | 2012-06-08 | 2012-09-26 | 北京理工大学 | Non-rare earth nanocrystalline fluorescent powder-containing packaging material, preparation method and application |
-
2003
- 2003-01-10 CN CNB031015069A patent/CN1266778C/en not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100376963C (en) * | 2004-12-18 | 2008-03-26 | 群康科技(深圳)有限公司 | Backlight module assembly |
CN101661983B (en) * | 2008-08-26 | 2012-03-14 | 富准精密工业(深圳)有限公司 | Light emitting diode (LED) and preparation method thereof |
CN102694110A (en) * | 2012-06-08 | 2012-09-26 | 北京理工大学 | Non-rare earth nanocrystalline fluorescent powder-containing packaging material, preparation method and application |
CN102694110B (en) * | 2012-06-08 | 2015-06-03 | 北京理工大学 | Non-rare earth nanocrystalline fluorescent powder-containing packaging material, preparation method and application |
Also Published As
Publication number | Publication date |
---|---|
CN1266778C (en) | 2006-07-26 |
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C14 | Grant of patent or utility model | ||
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CX01 | Expiry of patent term |
Granted publication date: 20060726 |
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CX01 | Expiry of patent term |