CN1510831A - Bias circuit of radio frequency power amplifier - Google Patents
Bias circuit of radio frequency power amplifier Download PDFInfo
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- CN1510831A CN1510831A CNA021595674A CN02159567A CN1510831A CN 1510831 A CN1510831 A CN 1510831A CN A021595674 A CNA021595674 A CN A021595674A CN 02159567 A CN02159567 A CN 02159567A CN 1510831 A CN1510831 A CN 1510831A
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- radio
- frequency
- bias
- base stage
- power amplifier
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Abstract
A biasing circuit for radio frequency power amplifier, includes a bias voltage transistor, a DC voltage source having a collector, a emitter and base electrode, the collector is connected with DC voltage power, the emitter is connected with a radio frequency transistor and the collector is connected with a bias voltage source. A inductance is connected with the part used for isolating the couple of input signal of radio frequency to bias voltage transistor between base electrode of radio frequency transistor and emitter of bias voltage transistor. A capacitance is connected with the part between the emitter of bias voltage transistor and ground, or between the base electrode of bias voltage and ground, to lead the part from couple of input signal of radio frequency to the bias voltage transistor to ground, further prevent the bias voltage transistor from driving to saturation state.
Description
Technical field
The present invention relates to a kind of bias circuit of radio-frequency power amplifier, relate in particular to a kind of bias circuit in order to the linearity of improving radio-frequency power amplifier.
Background technology
Fig. 1 shows the schematic diagram of an example of the existing bias circuit that is used for radio-frequency power amplifier.With reference to Fig. 1, in existing resistor-type bias circuit 100, biasing voltage source Vbias is supplied to the base stage of radio-frequency (RF) transistors 102 via bias resistance 104, so that the base current of radio-frequency (RF) transistors 102 to be provided.Electric capacity 106 is connected in the rf inputs mouth of amplifier and the base stage of radio-frequency (RF) transistors 102, with the base stage of coupling radio-frequency input signals (but not direct current signal) to radio-frequency (RF) transistors 102.The collection utmost point of radio-frequency (RF) transistors 102 is via the output port of output matching circuit 108 as amplifier.The shortcoming of existing resistor-type bias circuit 100 is, limited bias current control only can be provided.For example, if bias resistance 104 has the small resistor value, unless biasing voltage source Vbias along with temperature change, otherwise the temperature change meeting causes the quiescent current that is associated with radio-frequency (RF) transistors 102 to produce unacceptable change.On the other hand, if bias resistance 104 has big resistance value, then the bias voltage deficiency takes place or has the big static bias voltage electric current of not expecting in radio-frequency (RF) transistors 102 when height drives the rank, position.
Fig. 2 shows the schematic diagram of another example of the existing bias circuit that is used for radio-frequency power amplifier.Existing active bias circuit 200 shown in Figure 2 is the improvement of existing resistor-type bias circuit 100 shown in Figure 1.With reference to Fig. 2, existing active bias circuit 200 comprises a bias transistor 202, draws an amount of bias current to allow radio-frequency (RF) transistors 102 according to rank, radio-frequency driven position, still keeps low quiescent current simultaneously.Biasing voltage source Vbias is applied to the base stage of bias transistor 202 via bias resistance 104.Bias transistor 202 is that an emitter-base bandgap grading is with the coupling transistor npn npn.The collection utmost point of bias transistor 202 is connected to Vcc.Existing active bias circuit 200 has more low-impedance advantage.
Yet active bias circuit 200 shown in Figure 2 has the shortcoming that bias transistor 202 may enter saturation condition.Particularly, when radio-frequency (RF) transistors 102 is driven into the state of high power output, the part of radio-frequency input signals can turn over a head from the collection utmost point of radio-frequency (RF) transistors 102 and be coupled to the base stage of radio-frequency (RF) transistors 102, may enter subsequently in the active bias circuit 200.As a result, bias transistor 202 is urged to saturation condition by the part that is coupled to bias transistor 202 in the radio-frequency input signals, makes that the operation behavior of itself is more non-linear.In such cases, active bias circuit 200 can't be followed radio-frequency input signals provides the linear bias electric current to radio-frequency (RF) transistors 102.
Summary of the invention
In order to overcome the above-mentioned deficiency of prior art, the object of the present invention is to provide a kind of bias circuit that is used for radio-frequency power amplifier, can prevent that bias transistor is subjected to the influence of radio-frequency input signals, thereby improve the linearity of radio-frequency power amplifier.
For achieving the above object, the invention provides a kind of bias circuit that is used for radio-frequency power amplifier, this radio-frequency power amplifier comprises a radio-frequency (RF) transistors and one first electric capacity, wherein this radio-frequency (RF) transistors has a collection utmost point, an emitter-base bandgap grading and a base stage, and an end of this first electric capacity is connected in this collection utmost point of this radio-frequency (RF) transistors, and the other end is in order to receive a radio-frequency input signals, this bias circuit comprises: a bias transistor, has a collection utmost point, an emitter-base bandgap grading and a base stage, wherein this collection utmost point is connected to a direct voltage source, and this base stage is connected to a biasing voltage source; And one second electric capacity, be connected between this emitter-base bandgap grading and ground of this bias transistor, use so that the part that is coupled to this bias transistor in this radio-frequency input signals is directly imported ground, thereby prevent that this bias transistor is driven to saturation condition.
The bias circuit that is used for radio-frequency power amplifier provided by the invention can also comprise one the 3rd electric capacity, be connected between this base stage and ground of this bias transistor, with so that the part that is coupled to this bias transistor in this radio-frequency input signals is directly imported ground, thereby prevent that this bias transistor is driven to saturation condition.
The bias circuit that is used for radio-frequency power amplifier provided by the invention can also comprise an inductance, be connected between this emitter-base bandgap grading of this base stage of this radio-frequency (RF) transistors and this bias transistor, in order to the part that is coupled to this bias transistor in isolated this radio-frequency input signals.
Description of drawings
Fig. 1 shows the schematic diagram of an example of the existing bias circuit that is used for radio-frequency power amplifier;
Fig. 2 shows the schematic diagram of another example of the existing bias circuit that is used for radio-frequency power amplifier; And
Fig. 3 A and 3B show according to the schematic diagram that is used for the bias circuit of radio-frequency power amplifier of the present invention.
Symbol description among the figure
100 resistor-type bias circuits
102 radio-frequency (RF) transistors
104 bias resistances
106 electric capacity
108 output matching circuits
200 active bias circuits
202 bias transistors
301,302 diode connecting-type transistors
303 resistance
304 inductance
305,306 electric capacity
Embodiment
Following conjunction with figs., and describe purpose, feature and the advantage that is used for the bias circuit of radio-frequency power amplifier of the present invention in detail with embodiment.
Fig. 3 A and 3B show according to the schematic diagram that is used for the bias circuit of radio-frequency power amplifier of the present invention.With reference to Fig. 3 A, according to the bias circuit that is used for radio-frequency power amplifier of the present invention, biasing voltage source Vbias via resistance 303 supply of current to diode in series connecting-type transistor 301 and 302.Particularly, each in the diode connecting-type transistor 301 and 302 have its base stage be connected in its collection utmost point form and form diode.The voltage that is positioned at the collection utmost point place of diode connecting-type transistor 301 is two times VBE.This voltage is applied to the base stage of bias transistor 202, and wherein bias transistor 202 is that emitter-base bandgap grading is with the coupling transistor.The collection utmost point of bias transistor 202 is connected to direct voltage source Vcc.Because being base voltage, emitter voltage deducts VBE, so the emitter voltage of bias transistor 202 equals VBE (2VBE-VBE=VBE).Here it is is applied to the bias voltage of radio-frequency (RF) transistors 102.
Be coupled to bias transistor 202 in order to prevent that radio-frequency input signals from turning over a head from radio-frequency (RF) transistors 102, cause bias transistor 202 to be driven to saturation condition, inductance 304 is arranged between the base stage of the emitter-base bandgap grading of bias transistor 202 and radio-frequency (RF) transistors 102.Inductance 304 can reduce the part that is coupled to bias transistor 202 in the radio-frequency input signals, is driven to saturation condition to prevent bias transistor 202.Therefore, the linearity of radio-frequency power amplifier is improved.
Though inductance 304 can reduce the part that is coupled to bias transistor 202 in the radio-frequency input signals effectively, but still can't it is isolated fully.Therefore, more comprise an electric capacity 305, be connected between the emitter-base bandgap grading and ground of bias transistor 202 according to the bias circuit that is used for radio-frequency power amplifier of the present invention.Because for radio-frequency input signals, electric capacity 305 is as the short circuit of circuit, so the part that is coupled to bias transistor 202 in the radio-frequency input signals can directly be imported ground.In this way, prevent that bias transistor 202 is urged to saturation condition by radio-frequency input signals, thereby the linearity of radio-frequency power amplifier is improved.
Fig. 3 B is the schematic diagram that shows according to another embodiment of the bias circuit that is used for radio-frequency power amplifier of the present invention.With reference to Fig. 3 B, an electric capacity 306 is connected between the base stage and ground of bias transistor 202.Because for radio-frequency input signals, electric capacity 306 is as the short circuit of circuit, so the part that is coupled to bias transistor 202 in the radio-frequency input signals can directly be imported ground.By this way, prevent that bias transistor 202 is urged to saturation condition by radio-frequency input signals, thereby the linearity of radio-frequency power amplifier is improved.
The above is the preferred embodiment that is used for the bias circuit of radio-frequency power amplifier of the present invention, does not constitute the restriction to the scope of essence technology contents of the present invention.Its essence technology contents of bias circuit that is used for radio-frequency power amplifier of the present invention broadly is defined in claims of the present invention, any technology entity or method that other people finish, if with defined identical in claims of the present invention, or its equivalence change, all be regarded as being covered by in this claim.
Claims (9)
1. bias circuit that is used for radio-frequency power amplifier, this radio-frequency power amplifier comprises a radio-frequency (RF) transistors and one first electric capacity, it is characterized in that, this radio-frequency (RF) transistors has the collection utmost point, an emitter-base bandgap grading and a base stage, and an end of this first electric capacity is connected in this collection utmost point of this radio-frequency (RF) transistors and the other end in order to receive a radio-frequency input signals, and this bias circuit comprises:
A bias transistor has the collection utmost point, an emitter-base bandgap grading and a base stage, and wherein this collection utmost point is connected to a direct voltage source and this base stage is connected to a biasing voltage source; And
One second electric capacity is connected between this emitter-base bandgap grading and ground of this bias transistor, uses so that the part that is coupled to this bias transistor in this radio-frequency input signals is directly imported ground, thereby prevents that this bias transistor is driven to saturation condition.
2. the bias circuit that is used for radio-frequency power amplifier as claimed in claim 1, it is characterized in that, more comprise one the 3rd electric capacity, be connected between this base stage and ground of this bias transistor, with so that the part that is coupled to this bias transistor in this radio-frequency input signals is directly imported ground, thereby prevent that this bias transistor is driven to saturation condition.
3. the bias circuit that is used for radio-frequency power amplifier as claimed in claim 1, it is characterized in that, more comprise an inductance, be connected between this emitter-base bandgap grading of this base stage of this radio-frequency (RF) transistors and this bias transistor, in order to the part that is coupled to this bias transistor in isolated this radio-frequency input signals.
4. the bias circuit that is used for radio-frequency power amplifier as claimed in claim 1 is characterized in that, this biasing voltage source comprises:
A resistance is connected between this base stage of a supply voltage and this bias transistor;
A plurality of diodes are series between this base stage and ground of this bias transistor, in order to predetermined voltage this base stage to this bias transistor to be provided.
5. the bias circuit that is used for radio-frequency power amplifier as claimed in claim 4 is characterized in that, each in these a plurality of diodes is formed in the mode that its base stage is connected in its collection utmost point by a transistor.
6. bias circuit that is used for radio-frequency power amplifier, this radio-frequency power amplifier comprises a radio-frequency (RF) transistors and one first electric capacity, it is characterized in that, this radio-frequency (RF) transistors has the collection utmost point, an emitter-base bandgap grading and a base stage, and an end of this first electric capacity is connected in this collection utmost point of this radio-frequency (RF) transistors and the other end in order to receive a radio-frequency input signals, and this bias circuit comprises:
A bias transistor has the collection utmost point, an emitter-base bandgap grading and a base stage, and wherein this collection utmost point is connected to a direct voltage source and this base stage is connected to a biasing voltage source; And
One second electric capacity is connected between this base stage and ground of this bias transistor, uses so that the part that is coupled to this bias transistor in this radio-frequency input signals is directly imported ground, thereby prevents that this bias transistor is driven to saturation condition.
7. the bias circuit that is used for radio-frequency power amplifier as claimed in claim 6, it is characterized in that, more comprise an inductance, be connected between this emitter-base bandgap grading of this base stage of this radio-frequency (RF) transistors and this bias transistor, in order to the part that is coupled to this bias transistor in isolated this radio-frequency input signals.
8. the bias circuit that is used for radio-frequency power amplifier as claimed in claim 6 is characterized in that, this biasing voltage source comprises:
A resistance is connected between this base stage of supply voltage and this bias transistor;
A plurality of diodes are series between this base stage and ground of this bias transistor, in order to predetermined voltage this base stage to this bias transistor to be provided.
9. the bias circuit that is used for radio-frequency power amplifier as claimed in claim 8 is characterized in that, each in these a plurality of diodes is formed in the mode that its base stage is connected in its collection utmost point by a transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02159567 CN1235334C (en) | 2002-12-25 | 2002-12-25 | Bias circuit of radio frequency power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02159567 CN1235334C (en) | 2002-12-25 | 2002-12-25 | Bias circuit of radio frequency power amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1510831A true CN1510831A (en) | 2004-07-07 |
| CN1235334C CN1235334C (en) | 2006-01-04 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02159567 Expired - Fee Related CN1235334C (en) | 2002-12-25 | 2002-12-25 | Bias circuit of radio frequency power amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1235334C (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1881785B (en) * | 2006-04-26 | 2010-10-27 | 天津南大强芯半导体芯片设计有限公司 | DC voltage bias circuit and its application in integrated circuit |
| CN101043202B (en) * | 2006-03-22 | 2011-07-13 | 松下电器产业株式会社 | High-frequency power amplifier |
| CN102129266A (en) * | 2009-10-02 | 2011-07-20 | 天工方案公司 | Circuit and method for generating a reference voltage |
| CN103986421A (en) * | 2013-02-08 | 2014-08-13 | 英飞凌科技股份有限公司 | Input match network for a power circuit |
| CN104569518A (en) * | 2014-12-26 | 2015-04-29 | 上海贝岭股份有限公司 | Trans-impedance amplifier mass production test signal source |
| CN103780207B (en) * | 2012-10-22 | 2016-11-30 | 上海华虹宏力半导体制造有限公司 | CMOS radio-frequency power amplifier |
| CN108233875A (en) * | 2016-12-13 | 2018-06-29 | 台达电子工业股份有限公司 | Radio frequency amplifier and improve the method for its efficiency and radio-frequency power supply supply |
-
2002
- 2002-12-25 CN CN 02159567 patent/CN1235334C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101043202B (en) * | 2006-03-22 | 2011-07-13 | 松下电器产业株式会社 | High-frequency power amplifier |
| CN1881785B (en) * | 2006-04-26 | 2010-10-27 | 天津南大强芯半导体芯片设计有限公司 | DC voltage bias circuit and its application in integrated circuit |
| CN102129266A (en) * | 2009-10-02 | 2011-07-20 | 天工方案公司 | Circuit and method for generating a reference voltage |
| CN102129266B (en) * | 2009-10-02 | 2013-12-18 | 天工方案公司 | Circuit and method for generating reference voltage |
| CN103780207B (en) * | 2012-10-22 | 2016-11-30 | 上海华虹宏力半导体制造有限公司 | CMOS radio-frequency power amplifier |
| CN103986421A (en) * | 2013-02-08 | 2014-08-13 | 英飞凌科技股份有限公司 | Input match network for a power circuit |
| CN103986421B (en) * | 2013-02-08 | 2017-03-01 | 英飞凌科技股份有限公司 | Input matching network for power circuit |
| CN104569518A (en) * | 2014-12-26 | 2015-04-29 | 上海贝岭股份有限公司 | Trans-impedance amplifier mass production test signal source |
| CN108233875A (en) * | 2016-12-13 | 2018-06-29 | 台达电子工业股份有限公司 | Radio frequency amplifier and improve the method for its efficiency and radio-frequency power supply supply |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1235334C (en) | 2006-01-04 |
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