CN1487543A - Sol-gel enclosed treatment process for electronic element and device - Google Patents
Sol-gel enclosed treatment process for electronic element and device Download PDFInfo
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- CN1487543A CN1487543A CNA031422853A CN03142285A CN1487543A CN 1487543 A CN1487543 A CN 1487543A CN A031422853 A CNA031422853 A CN A031422853A CN 03142285 A CN03142285 A CN 03142285A CN 1487543 A CN1487543 A CN 1487543A
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- sol
- gel
- electronic devices
- borosilicate
- components
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000003618 dip coating Methods 0.000 claims abstract description 7
- 238000007789 sealing Methods 0.000 claims description 27
- ZFZQOKHLXAVJIF-UHFFFAOYSA-N zinc;boric acid;dihydroxy(dioxido)silane Chemical compound [Zn+2].OB(O)O.O[Si](O)([O-])[O-] ZFZQOKHLXAVJIF-UHFFFAOYSA-N 0.000 claims description 22
- 238000010792 warming Methods 0.000 claims description 16
- 229910052788 barium Inorganic materials 0.000 claims description 13
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- 229910052726 zirconium Inorganic materials 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 230000014759 maintenance of location Effects 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000011049 filling Methods 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 2
- 238000003980 solgel method Methods 0.000 claims 2
- 238000009713 electroplating Methods 0.000 abstract description 6
- 230000009931 harmful effect Effects 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 239000000919 ceramic Substances 0.000 abstract description 2
- 238000001035 drying Methods 0.000 abstract description 2
- 239000011148 porous material Substances 0.000 abstract description 2
- 238000005086 pumping Methods 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 description 10
- 238000007747 plating Methods 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 8
- 238000006731 degradation reaction Methods 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 238000010304 firing Methods 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010946 fine silver Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012669 liquid formulation Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910001174 tin-lead alloy Inorganic materials 0.000 description 1
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- Electroplating Methods And Accessories (AREA)
- Paints Or Removers (AREA)
Abstract
The present invention discloses the method for enclosed processing electronic element and device with sol-gel. Electronic element and device is set inside sealed container, and after vacuum pumping, sol is introduced to soak the electronic element and device before further vacuum pumping and drying at room temperature. The dip coating process is repeated for several times to raise surface gel thickness, and the electronic element and device with coated gel is heat treated in furnace to complete the enclosing treatment. The said process can enclose the cracks and pores, especially the bonding crack between metal inner electrode and ceramic, inside and outside the electronic element and device, form one compact protecting coating on the surface of inner electrode, prevent outer harmful matter from entering inside of the electronic element and device during electroplating and use, and prolong the service life of electronic element and device.
Description
Affiliated technical field
The sealing that the present invention relates to electronic devices and components is handled, specifically a kind of employing colloidal sol-gel sealing processing electronic element and device method.
Background technology
Since the eighties, along with rapid development of surface mount in the world, lamination sheet type device purposes such as multilayer ceramic capacitor, resistor, multi-layer inductor, filter, balanced to unbalanced transformer (Ba Lun), resonator oscillator, frequency discriminator, antenna, duplexer, RF switch module are more and more wide.Facts have proved and to adopt three layers of termination electrode technology, can improve anti-sweating heat and solderability effectively, adapt to the surface mounting technology requirement.The basal electrode of three layers of termination electrode is the fine silver layer, and target is a nickel dam, and outer electrode is tin or tin-lead alloy layer.Form the plating of three layers of termination electrode structure, plating than general machinery, plastic part is more complex, it integrates pottery, electronics, chemical industry technology, should make product when improving anti-sweating heat and solderability, keep every electrical property to be without prejudice, allow again the chemical composition of plating bath does not produce harmful effect to the medium body in the electroplating process.In electroplating process, these devices are in the also charged adverse circumstances of weakly acidic plating bath, because termination electrode, termination electrode and the ceramic dielectric contact zones of laminated device are porous matter, electroplate liquid permeates to device inside by termination electrode and layer electrode defects in electroplating process, make the corrosion of the electroplate liquid that electrode is infiltrated in the device and cause its electrical property to descend, electroplate liquid is stayed also can influence the partial properties of device index in the device, all can cause the deterioration of part electrical performance indexes after electroplating.For preventing the device performance degradation, carried out serial test at device and plating, generally all alleviate the device electrical performance fall at present by the method for raising porcelain body sintered density and the method for adjustment electroplate liquid formulation.
Summary of the invention
The purpose of this invention is to provide a kind of employing colloidal sol-gel sealing processing electronic element and device method; thereby device surface form diaphragm or in hole and crackle the method for decomposition in situ sintering dead-end pore and crackle carry out the device surface sealing and handle and make plating bath can't carry out device inside, thereby prevent the device electrical performance deterioration.
In order to achieve the above object, the technical solution used in the present invention is as follows:
Scheme 1:
1) electronic devices and components are placed in the vacuum tank, introduce colloidal sol then and vacuumized 30~300 minutes, dry under room temperature, atmospheric conditions; Said colloidal sol is Ludox, aluminium colloidal sol, titanium colloidal sol, zirconium colloidal sol, zinc borosilicate sol, barium borosilicate sol, borosilicate sol, plumbous borosilicate sol or complex sol;
2) after under room temperature, the atmospheric conditions dry 1~3 hour; the electronic devices and components that are coated with gel are placed box type furnace, chain-conveyer furnace or atmosphere protection stove; be warming up to 350~950 ℃ to be not more than 50 ℃/min speed; temperature retention time was heat-treated in 0.5~6 hour; cool to room temperature then with the furnace, promptly finish the sealing of electronic devices and components is handled.
Scheme 2:
1) electronic devices and components are vacuumized processing, the pumpdown time is between 10~60 minutes; 2) in vacuum tank, introduce colloidal sol, continued then to vacuumize 30~300 minutes, dry under room temperature, atmospheric conditions; Said colloidal sol is Ludox, aluminium colloidal sol, titanium colloidal sol, zirconium colloidal sol, zinc borosilicate sol, barium borosilicate sol, borosilicate sol, plumbous borosilicate sol or complex sol;
3) after under room temperature, the atmospheric conditions dry 1~3 hour; the electronic devices and components that are coated with gel are placed box type furnace, chain-conveyer furnace or atmosphere protection stove; be warming up to 350~950 ℃ to be not more than 50 ℃/min speed; temperature retention time was heat-treated in 0.5~6 hour; cool to room temperature then with the furnace, promptly finish the sealing of electronic devices and components is handled.
Scheme 3:
1) electronic devices and components are vacuumized processing, the pumpdown time is between 10~60 minutes;
2) in vacuum tank, introduce colloidal sol, continued then to vacuumize 30~300 minutes, dry under room temperature, atmospheric conditions; Said colloidal sol is Ludox, aluminium colloidal sol, titanium colloidal sol, zirconium colloidal sol, zinc borosilicate sol, barium borosilicate sol, borosilicate sol, plumbous borosilicate sol or complex sol;
3) to passing through immersion process through vacuum treated electronic devices and components, dry under room temperature, the atmospheric conditions, carry out one or many on the electronic devices and components surface and apply, form silicon gel, alumina gel, titanium gel, zirconium gel, zinc borosilicate gel, barium borosilicate gel, borosilicate gel, plumbous borosilicate gel or the plural gel layer of 0.1~2 μ m on the electronic devices and components surface;
4) after under room temperature, the atmospheric conditions dry 1~3 hour; the electronic devices and components that are coated with gel are placed box type furnace, chain-conveyer furnace or atmosphere protection stove; be warming up to 350~950 ℃ to be not more than 50 ℃/min speed; temperature retention time was heat-treated in 0.5~6 hour; cool to room temperature then with the furnace, promptly finish the sealing of electronic devices and components is handled.
Scheme 4:
1) electronic devices and components is adopted the dip-coating mode in filling the container of colloidal sol, form silicon gel, alumina gel, titanium gel, zirconium gel, zinc borosilicate gel, barium borosilicate gel, borosilicate gel, plumbous borosilicate gel or the plural gel layer of 0.1~2 μ m on the electronic devices and components surface; Said colloidal sol is Ludox, aluminium colloidal sol, titanium colloidal sol, zirconium colloidal sol, zinc borosilicate sol, barium borosilicate sol, borosilicate sol, plumbous borosilicate sol or complex sol;
2) after under room temperature, the atmospheric conditions dry 1~3 hour; the electronic devices and components that are coated with gel are placed box type furnace, chain-conveyer furnace or atmosphere protection stove; be warming up to 350~950 ℃ to be not more than 50 ℃/min speed; temperature retention time was heat-treated in 0.5~6 hour; cool to room temperature then with the furnace, promptly finish the sealing of electronic devices and components is handled.
The present invention compares with background technology, and the useful effect that has is:
Adopt process of the present invention can effectively seal electronic device surface and inside holes and slit; and the flawless protective finish that the metal inner electrode surface that has the slit forms one deck densification can combined with pottery; can effectively prevent in plating or the use; extraneous harmful substance is carried out electronic devices and components inside; even enter the inner corrosion that also can reduce internal electrode metal; keep original electrical property constant simultaneously, can prolong electronic devices and components useful life or reduce device electrical performance deterioration in the electroplating process.
Observe through electronic scanner microscope, above-mentioned Ludox is handled can form the fatal noncrystalline membrane of one deck, effectively shutoff electronic devices and components crizzle and hole at device surface; Adopt zinc borosilicate and barium borosilicate sol to handle, can further promote the sintering between the surface microstructure, thereby the micro-crack of device surface and hole are disappeared.Sealing was handled before the present invention can be used for lamination sheet type electronic devices and components plating such as multilayer ceramic capacitor, resistor, multi-layer inductor, filter, balanced to unbalanced transformer (Ba Lun), resonator oscillator, frequency discriminator, antenna, duplexer, RF switch module, also can be used for the protection against the tide of electronic devices and components, damp proof and anticorrosive property gas sealing processing.
Embodiment
Embodiment 1
Vacuumize 0.3 hour in the airtight container with holding the filter that prints after silver ink firing is finished to be placed on, adopt suction pipe to utilize the container pull of vacuum to introduce Ludox then, continued to vacuumize 2 hours, get rid of gas in the laminated filter, it is inner that colloidal sol enters pottery, stop to vacuumize, take out filter in room temperature, atmosphere is put into box type furnace after dry 2 hours down, and 80 ℃ are incubated 1 hour, are warming up to 600 ℃ with 4 ℃/min speed, be incubated 2 hours, cool to room temperature then with the furnace, obtain sealing the filter of processing, electroplate back device differential loss degradation 0.1~0.2dB, the device differential loss that is untreated reduces by 3~4dB, effectively reduces the electrical property deterioration.
Embodiment 2
Vacuumize 0.3 hour in the airtight container with holding the filter that prints after silver ink firing is finished to be placed on, adopt suction pipe to utilize the container pull of vacuum to introduce aluminium colloidal sol then, continued to vacuumize 2 hours, get rid of gas in the laminated filter, it is inner that colloidal sol enters pottery, stop to vacuumize, take out filter in room temperature, atmosphere is put into box type furnace after dry 2 hours down, and 80 ℃ are incubated 1 hour, are warming up to 900 ℃ with 4 ℃/min speed, be incubated 2 hours, cool to room temperature then with the furnace, obtain sealing the filter of processing, electroplate back device differential loss degradation 0.1~0.2dB, the device differential loss that is untreated reduces by 3~4dB, effectively reduces the electrical property deterioration.
Embodiment 3
Carry out the preparation of zinc borosilicate sol earlier, its proportioning is as follows: Zn (AC)
2: H
3BO
3: Si (OCH
2-CH
3)
4: H
2O=1: 2: 7: 30 (mol ratio), adopt C
2H
5As catalyst, bath temperature is 60 ℃ to OH as solvent, HCl, depositing 1 hour.
Vacuumize 0.5 hour in the airtight container with holding the filter that prints after silver ink firing is finished to be placed on, adopt suction pipe to utilize the container pull of vacuum to introduce the zinc borosilicate sol then, continued to vacuumize 2 hours, get rid of gas in the laminated filter, it is inner that colloidal sol enters pottery, stop to vacuumize, take out the filter room temperature, atmosphere is put into box type furnace after dry 2 hours down, and 80 ℃ are incubated 1 hour, are warming up to 500 ℃ with 4 ℃/min speed, be incubated 2 hours, cool to room temperature then with the furnace, obtain sealing the filter of processing, electroplate back device differential loss degradation 0.1~0.2dB, the device differential loss that is untreated reduces by 3~4dB, effectively reduces the electrical property deterioration.
Embodiment 4
Carry out the preparation of zinc borosilicate sol earlier, its proportioning is as follows: Zn (AC)
2: H
3BO
3: Si (OCH
2-CH
3)
4: H
2O=1: 2: 7: 30 (mol ratio), adopt C
2H
5As catalyst, bath temperature is 60 ℃ to OH as solvent, HCl, depositing 1 hour.
Vacuumize 0.5 hour in the airtight container with holding the filter that prints after silver ink firing is finished to be placed on, adopt suction pipe to utilize the container pull of vacuum to introduce the zinc borosilicate sol then, continued to vacuumize 2 hours, get rid of gas in the laminated filter, it is inner that colloidal sol enters pottery, stop to vacuumize, take out the filter room temperature, atmosphere is dry down, repeatedly dip-coating then, form 0.8 μ m gel coat at device surface, put into 80 ℃ of insulations of box type furnace 1 hour, be warming up to 500 ℃ with 4 ℃/min speed, be incubated 2 hours, cool to room temperature then with the furnace, obtain sealing the filter of processing, electroplate in the device differential loss degradation 0.1dB of back, the device differential loss that is untreated reduces by 3~4dB, effectively reduces the electrical property deterioration.
Embodiment 5
Carry out the preparation of zinc borosilicate sol earlier, its proportioning is as follows: Zn (AC)
2: H
3BO
3: Si (OCH
2-CH
3)
4: H
2O=1: 2: 7: 30 (mol ratio), adopt C
2H
5As catalyst, bath temperature is 60 ℃ to OH as solvent, HCl, depositing 1 hour.
Adopt repeatedly dip-coating after will holding the seal silver ink firing to finish, form 1 μ m gel coat at device surface, put into 80 ℃ of insulations of box type furnace 1 hour, be warming up to 500 ℃ with 4 ℃/min speed, be incubated 2 hours, cool to room temperature then with the furnace, obtain sealing the filter of processing, electroplate in the device differential loss degradation 0.1~0.3dB of back, the device differential loss that is untreated reduces by 3~4dB, effectively reduces the electrical property deterioration.
Embodiment 6
Carry out the preparation of zinc borosilicate sol earlier, its proportioning is as follows: Ba (AC)
2: H
3BO
3: Si (OCH
2-CH
3)
4: H
2O=1: 2: 7: 30 (mol ratio), adopt C
2H
5As catalyst, bath temperature is 60 ℃ to OH as solvent, HCl, depositing 1 hour.
Adopt repeatedly dip-coating after will holding the seal silver ink firing to finish, form 0.8 μ m gel coat at device surface, put into 80 ℃ of insulations of box type furnace 1 hour, be warming up to 500 ℃ with 4 ℃/min speed, be incubated 2 hours, cool to room temperature then with the furnace, obtain sealing the filter of processing, electroplate in the device differential loss degradation 0.1~0.2dB of back, the device differential loss that is untreated reduces by 3~4dB, effectively reduces the electrical property deterioration.
Embodiment 7
Carry out the preparation of zinc borosilicate sol earlier, its proportioning is as follows: Zn (AC)
2: H
3BO
3: Si (OCH
2-CH
3)
4: H
2O=1: 2: 7: 30 (mol ratio), adopt C
2H
5As catalyst, bath temperature is 60 ℃ to OH as solvent, HCl, depositing 1 hour.
Vacuumize 0.5 hour in the airtight container with holding the capacitor that prints after silver ink firing is finished to be placed on, adopt suction pipe to utilize the container pull of vacuum to introduce the zinc borosilicate sol then, continued to vacuumize 2 hours, get rid of gas in the stacked capacitor, it is inner that colloidal sol enters pottery, stop to vacuumize, take out the filter room temperature, atmosphere is dry down, repeatedly dip-coating then, form 0.8 μ m gel coat at device surface, put into 80 ℃ of insulations of box type furnace 1 hour, be warming up to 500 ℃, be incubated 2 hours with 4 ℃/min speed, cool to room temperature then with the furnace, obtain sealing the capacitor of processing, (loss angle tangent of 0.1PF~0.22uF) is less than 1.0% (20, IMHz IVDC for plating back NPO capacitor, 75%), being untreated, (loss angle tangent of 0.1PF~0.22uF) is less than 3.5% (20, IMHz IVDC, 75%) for the NPO capacitor.
Embodiment 8
Carry out the preparation of zinc borosilicate sol earlier, its proportioning is as follows: Zn (AC)
2: H
3BO
3: Si (OCH
2-CH
3)
4: H
2O=1: 2: 7: 30 (mol ratio), adopt C
2H
5As catalyst, bath temperature is 60 ℃ to OH as solvent, HCl, depositing 1 hour.
Introduce colloidal sol and vacuumized then 2 hours in filling the vacuum tank of filter, get rid of gas in the laminated filter, it is inner that colloidal sol enters pottery, stops to vacuumize, and takes out drying for standby under filter room temperature, the atmosphere.Be warming up to 500 ℃ with 4 ℃/min speed, be incubated 2 hours, cool to room temperature then with the furnace, obtain sealing the filter of processing, electroplate in the device differential loss degradation 0.1~0.3dB of back, the device differential loss that is untreated reduces by 3~4dB, effectively reduces the electrical property deterioration.
Claims (4)
1. one kind is adopted colloidal sol-gel method to handle the method for sealing electronic devices and components, and it is characterized in that: it comprises following each step:
1) electronic devices and components are placed in the vacuum tank, introduce colloidal sol then and vacuumized 30~300 minutes, dry under room temperature, atmospheric conditions; Said colloidal sol is Ludox, aluminium colloidal sol, titanium colloidal sol, zirconium colloidal sol, zinc borosilicate sol, barium borosilicate sol, borosilicate sol, plumbous borosilicate sol or complex sol;
2) after under room temperature, the atmospheric conditions dry 1~3 hour; the electronic devices and components that are coated with gel are placed box type furnace, chain-conveyer furnace or atmosphere protection stove; be warming up to 350~950 ℃ to be not more than 50 ℃/min speed; temperature retention time was heat-treated in 0.5~6 hour; cool to room temperature then with the furnace, promptly finish the sealing of electronic devices and components is handled.
2. a kind of employing colloidal sol according to claim 1-gel method is handled the method for sealing electronic devices and components, and it is characterized in that: it comprises following each step:
1) electronic devices and components are vacuumized processing, the pumpdown time is between 10~60 minutes;
2) in vacuum tank, introduce colloidal sol, continued then to vacuumize 30~300 minutes, dry under room temperature, atmospheric conditions; Said colloidal sol is Ludox, aluminium colloidal sol, titanium colloidal sol, zirconium colloidal sol, zinc borosilicate sol, barium borosilicate sol, borosilicate sol, plumbous borosilicate sol or complex sol;
3) after under room temperature, the atmospheric conditions dry 1~3 hour; the electronic devices and components that are coated with gel are placed box type furnace, chain-conveyer furnace or atmosphere protection stove; be warming up to 350~950 ℃ to be not more than 50 ℃/min speed; temperature retention time was heat-treated in 0.5~6 hour; cool to room temperature then with the furnace, promptly finish the sealing of electronic devices and components is handled.
3. a kind of employing colloidal sol according to claim 1-gel method is handled the method for sealing electronic devices and components, and it is characterized in that: it comprises following each step:
1) electronic devices and components are vacuumized processing, the pumpdown time is between 10~60 minutes;
2) in vacuum tank, introduce colloidal sol, continued then to vacuumize 30~300 minutes, dry under room temperature, atmospheric conditions; Said colloidal sol is Ludox, aluminium colloidal sol, titanium colloidal sol, zirconium colloidal sol, zinc borosilicate sol, barium borosilicate sol, borosilicate sol, plumbous borosilicate sol or complex sol;
3) to passing through immersion process through vacuum treated electronic devices and components, dry under room temperature, the atmospheric conditions, carry out one or many on the electronic devices and components surface and apply, form silicon gel, alumina gel, titanium gel, zirconium gel, zinc borosilicate gel, barium borosilicate gel, borosilicate gel, plumbous borosilicate gel or the plural gel layer of 0.1~2 μ m on the electronic devices and components surface;
4) after under room temperature, the atmospheric conditions dry 1~3 hour; the electronic devices and components that are coated with gel are placed box type furnace, chain-conveyer furnace or atmosphere protection stove; be warming up to 350~950 ℃ to be not more than 50 ℃/min speed; temperature retention time was heat-treated in 0.5~6 hour; cool to room temperature then with the furnace, promptly finish the sealing of electronic devices and components is handled.
4. one kind is adopted colloidal sol-gel method to handle the method for sealing electronic devices and components, and it is characterized in that: it comprises following each step:
1) electronic devices and components is adopted the dip-coating mode in filling the container of colloidal sol, form silicon gel, alumina gel, titanium gel, zirconium gel, zinc borosilicate gel, barium borosilicate gel, borosilicate gel, plumbous borosilicate gel or the plural gel layer of 0.1~2 μ m on the electronic devices and components surface; Said colloidal sol is Ludox, aluminium colloidal sol, titanium colloidal sol, zirconium colloidal sol, zinc borosilicate sol, barium borosilicate sol, borosilicate sol, plumbous borosilicate sol or complex sol;
2) after under room temperature, the atmospheric conditions dry 1~3 hour; the electronic devices and components that are coated with gel are placed box type furnace, chain-conveyer furnace or atmosphere protection stove; be warming up to 350~950 ℃ to be not more than 50 ℃/min speed; temperature retention time was heat-treated in 0.5~6 hour; cool to room temperature then with the furnace, promptly finish the sealing of electronic devices and components is handled.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB031422853A CN1287398C (en) | 2003-08-13 | 2003-08-13 | Sol-gel enclosed treatment process for electronic element and device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB031422853A CN1287398C (en) | 2003-08-13 | 2003-08-13 | Sol-gel enclosed treatment process for electronic element and device |
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CN1487543A true CN1487543A (en) | 2004-04-07 |
CN1287398C CN1287398C (en) | 2006-11-29 |
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CN108441923A (en) * | 2018-03-23 | 2018-08-24 | 长沙小新新能源科技有限公司 | A kind of hole-sealing technology of magnesium alloy |
CN109449013A (en) * | 2018-10-19 | 2019-03-08 | 福建火炬电子科技股份有限公司 | A method of prevent electroplate liquid from invading terminal electrode of multi-layer ceramic capacitor |
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2003
- 2003-08-13 CN CNB031422853A patent/CN1287398C/en not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102751090A (en) * | 2012-07-09 | 2012-10-24 | 合肥华耀电子工业有限公司 | Impregnation process of metal foil type capacitor with dry type high-pressure polypropylene film |
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CN105689833B (en) * | 2016-03-24 | 2018-02-23 | 株洲天微技术有限公司 | A kind of the sealed with brazing capping method and structure of microcircuit module housing and cover plate |
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