CN1479336A - Miniature electromagnet relay and its manufacturing method - Google Patents
Miniature electromagnet relay and its manufacturing method Download PDFInfo
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- CN1479336A CN1479336A CNA03146114XA CN03146114A CN1479336A CN 1479336 A CN1479336 A CN 1479336A CN A03146114X A CNA03146114X A CN A03146114XA CN 03146114 A CN03146114 A CN 03146114A CN 1479336 A CN1479336 A CN 1479336A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 69
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 69
- 239000010703 silicon Substances 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 18
- ZTXONRUJVYXVTJ-UHFFFAOYSA-N chromium copper Chemical compound [Cr][Cu][Cr] ZTXONRUJVYXVTJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000001259 photo etching Methods 0.000 claims abstract description 13
- 229910052709 silver Inorganic materials 0.000 claims abstract description 4
- 239000004332 silver Substances 0.000 claims abstract description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 229920001721 polyimide Polymers 0.000 claims description 19
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 239000007864 aqueous solution Substances 0.000 claims description 9
- 238000009713 electroplating Methods 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 230000012010 growth Effects 0.000 claims description 5
- 238000009738 saturating Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 4
- 238000005266 casting Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 241000237858 Gastropoda Species 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 238000005323 electroforming Methods 0.000 claims description 3
- 230000009647 facial growth Effects 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 7
- 230000008901 benefit Effects 0.000 abstract description 5
- 229910000863 Ferronickel Inorganic materials 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 238000004804 winding Methods 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 244000145845 chattering Species 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
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Abstract
Based on micro-electromechanical system technique, a kind of mono stable single contact micro electromagnetic relay is produced on silicon chip. The relay is composed of silicon substrate, exciting coil, relay contact, movable armature as well as chromium-copper thin layer and ferronickel alloy layer on back of silicon substrate. The manufacturing procedure includes following steps. Winding groove is etched out on face of substrate. Exciting coil is prepared. Relay contact is made by sputtering silver and photo etching technology. Movable armature is manufactured. Its advantages are small mass and size, low cost, high reliability and large current allowed.
Description
Technical field
A kind of micro electromagnetic relay belongs to industrial relay, and its manufacture method belongs to advanced and makes and technical field of automation for make a kind of technical process of little electromagnetic relay based on micro electro mechanical system (MEMS) technology.
Background technology
Present industrial relay is divided into two kinds of non-contact type solid-state relay and chattering type electromagnetic relays usually.The former utilizes semiconductor technology to make, and has advantages such as contactless, that volume is little, switching speed is fast, the life-span is long, is widely used.But solid-state relay is owing to be semiconductor construction, and its conduction impedance is bigger usually, and leakage current approximate number microampere degree during open circuit, these two indexs are far away not as good as electromagnetic relay.There have the electromagnetic relay of mechanical contact (reed) to have a contact impedance to be little, during open circuit the big electric leakage of resistance little, advantages such as reliable in action have obtained to use widely at big electric current or accurate control occasion.But, adopts electromagnetic relay that traditional handicraft makes except that bigger drive coil is arranged, and several part combine and assemble need be got up to form complete function, thereby its formation efficiency is lower.The quality of this relay and size are difficult to basic reducing in addition, are restricted sometimes in the application of occasions such as Aero-Space, portable household electrical appliances.
Summary of the invention
The objective of the invention is to overcome above-mentioned deficiency, design a kind of micro electromagnetic relay that has solid-state relay and electromagnetic relay advantage concurrently.The present invention adopts to make a kind of little electromagnetic relay based on MEMS (MEMS (micro electro mechanical system)) technology.
The technical scheme of the little electromagnetic relay of the present invention is characterized in that referring to structural representation Fig. 2 it includes magnet exciting coil 8, magnet exciting coil terminal 12, relay contact 13, moving armature 16 and silicon substrate 19; Silicon substrate 19 fronts have the coil groove 2 of line distribution in the shape of a spiral and the terminal groove 3 of shrinkage pool shape, magnet exciting coil 8 is set in the coil groove 2, be provided with the metal of conduction in the terminal groove 3, the front of silicon substrate 19 with terminal groove 3 and in the shape of a spiral corresponding position, the outer end 4 ' of the coil groove 2 that distributes of line be provided with magnet exciting coil terminal 12, magnet exciting coil terminal 12 respectively with terminal groove 3 in metal and magnet exciting coil 8 electrical couplings in the coil groove 2, the front face surface of silicon substrate 19 is provided with insulating barrier 20, be provided with two relay contacts 13 on the surface of insulating barrier 20, it is fixing that the front of silicon substrate 19 also is provided with an end and the silicon substrate 19 of iron-nickel alloy making, the other end can be communicated with the moving armature 16 of two relay contacts 13 downwards; The back side of silicon substrate 19 has magnetic core hole 17 at center-side 4 correspondence positions with terminal groove 3 and coil groove 2,17 bottoms, magnetic core hole are attached with the Armco magnetic iron nickel alloy, and with terminal groove 3 in metal and magnet exciting coil 8 electrical couplings in the coil groove 2, be disposed with the chromium-copper thin layer 5 of sputter growth by the hole in magnetic core hole 17 towards silicon substrate back side direction, and not only done the magnetic circuit part, but also double as magnetic core hole 17 between the layer of iron-nickel alloy 6 of electrical coupling; The back side of silicon substrate 19 of the present invention have with silicon substrate 19 fronts not etching saturating but adhere to the Armco magnetic iron nickel alloy and with the corresponding magnetic conductive hole 18 of the position fixed ends of moving armature 16.
This little electrical relay operation principle of the present invention is described below, when direct current inserts two magnet exciting coil terminals 12 of magnet exciting coil 8, the magnet exciting coil terminal 12 in left side is communicated with the center-side of magnet exciting coil 8 by reaching the iron-nickel alloy that adheres between them on two magnetic core holes 17, then the magnet exciting coil terminal 12 with the right side forms closed circuit, thereby make the magnet exciting coil 8 that is the distribution of snail line will produce magnetic flux, because comprising in magnetic core hole 17 and the magnetic conductive hole 18, the back side of silicon substrate 19 all is attached with the Armco magnetic iron nickel alloy, because the material of moving armature 16 also is an iron-nickel alloy, reaches the iron-nickel alloy and the moving armature 16 that adhere between them like this on magnetic core hole 17 and the magnetic conductive hole 18 and just formed approximate closed magnetic circuit again.When exciting current is enough big, after the free end of moving armature 16 is magnetized, will be subjected to electromagnetic attraction and be bent downwardly, contact with two relay contacts 13, because moving armature 16 is an electric conductor, thereby make two relay contact 13 conductings.When the exciting current of coil disconnected, moving armature 16 relied on the elastic force of himself to separate with relay contact 13, thereby relay is disconnected, thereby realized the open circuit and the closure function of relay.
The manufacture method of micro electromagnetic relay of the present invention is characterised in that it is based on the little electromagnetic relay of a kind of monostable single contact that MEMS technology is made on silicon chip, and its manufacture method step is:
1) adopt chemical Meteorological Act at the two-sided grown silicon nitride film 1 of silicon chip, next at silicon chip back side photoetching magnetic core hole 17 and magnetic conductive hole 18, etch silicon in potassium hydroxide aqueous solution then, hole not etching is saturating;
2), and in potassium hydroxide aqueous solution, etch groove at the profile of the front lighting groove ring recess 2 of silicon chip; With silicon chip, silicon face growth one deck is used for the silica membrane 1 ' of intercoil insulation then;
3) adopt photoetching process, the silica membrane at center-side 4 places of the terminal groove 3 in silicon front and coil groove 2 is eroded expose silicon; Then at silicon back spatter growth chromium-copper film 5;
4) adopt electric plating method, at chromium-copper film surface electroplating iron-nickel alloy 6, then silicon slice placed is corroded in potassium hydroxide aqueous solution, remove the residue silicon fiml in the center-side 4 of terminal groove 3 and coil groove 2, etch away residue silicon dioxide film in these two holes with buffered hydrofluoric acid again, expose the chromium of sputter;
5) at positive sputter one deck chromium-copper film of silicon chip; Utilize photoresist 7 to form the electroforming mould then, the electricity consumption copper coating forms magnet exciting coil 8 and filled end pilot trench 3 again;
6) stripping photoresist is removed the copper beyond the coil, and the silicon chip surface rotation generates polyimide film 9 then, and makes respectively hole 10 and the hole 11 corresponding with the outer end 4 ' of terminal groove 3 and coil groove 2 on polyimide film 9 by lithography; Then polyimides being carried out imidization handles;
7) at polyimide film 9 upper surface sputtered film silver, then in the hole 10 and the position photoetching in hole 11 obtain magnet exciting coil terminal 12, obtain relay contact 13 in polyimide film 9 upper surface photoetching;
8) to behind polyimide film 9, magnet exciting coil terminal 12 and the relay contact 13 sputter chromium-copper films, electroplate the sacrifice layer copper film, then utilize photoresist 14 to obtain moving armature casting mold 15;
9) electroplating iron-nickel film is removed photoresist 14 and corrosion sacrifice layer copper and resilient coating chromium, obtains moving armature 16.
The advantage of making this micro electromagnetic relay with method of the present invention is: 1, the quality volume is little, and relay body part thickness is in 0.5mm, and the plane geometry size is in 5mm; 2, production cost is low.Its production method and microelectronic chip roughly the same do not need the part assembling, can be in enormous quantities, and low-cost production improves the ratio of performance to price significantly; 3, the iron nickel material of substrate back part had both been made the part of magnetic circuit, and the part of double as magnet exciting coil center terminal again makes the simplified manufacturing process of coil.Simultaneously, magnetic core is made in perforate on silicon chip, and magnetic circuit efficient is improved; 4, utilize the anisotropic properties of monocrystalline silicon, at first etched line ring recess on silicon chip adopts sputter, electroplating technology to make magnet exciting coil then, produces the bigger coil of sectional area easily, thereby obtain bigger number of ampere turns, make this relay that enough contact contact forces be arranged; 5, contact current can be by big electric current between 0-1A.
Description of drawings
Fig. 1: among the manufacture craft process schematic diagram figure of micro electromagnetic relay of the present invention: 1, silicon nitride film 1 ', silica membrane, 2, terminal groove, 3, the coil groove, 4, the center-side of coil groove 3,4 ', the outer end of coil groove 3,5, chromium-copper film, 6, electroplating iron-nickel alloy, 7, photoresist, 8, magnet exciting coil, 9, polyimide film, 10, the hole, 11, the hole, 12, magnet exciting coil terminal, 13, relay contact, 14, photoresist, 15, the moving armature casting mold, 16, moving armature, 17, magnetic core hole, 18, magnetic conductive hole, 19, silicon substrate;
Fig. 2: micro electromagnetic relay structural representation of the present invention
Embodiment
Implement by following process according to Fig. 1-design shown in Figure 2, its concrete manufacture method step is:
1) with 450 ± 5 microns of thickness, crystal orientation＜100〉and the twin polishing silicon chip make substrate, adopt chemical Meteorological Act at two-sided grown silicon nitride film 1, thickness is 5000 ± 20 , as the masking layer of etch silicon; Next in the photoetching of the silicon chip back side, form magnetic core hole 17 and magnetic conductive hole 18; Etch silicon in 33 ± 1% potassium hydroxide aqueous solution then, constant temperature 80 ± 2 degree, appropriateness stirred 300 ± 5 minutes; Hole not etching is saturating, stays 50 ± 2 microns silicon thickness;
2), and in 33 ± 1% potassium hydroxide aqueous solutions, etch 10 ± 1 microns dark grooves at the profile of the front lighting groove ring recess 2 of silicon chip; Then silicon chip is put into oxidation in the oxidation furnace, temperature 1050 ± 1 degree feed steam in the stove, oxidization time 180 ± 5 minutes, and silicon face growth one deck is used for the silica membrane 1 ' of intercoil insulation;
3) adopt photoetching process, the silica membrane at center-side 4 places of the terminal groove 3 in silicon front and coil groove 2 is eroded expose silicon; Then at silicon back spatter growth chromium-copper film 5;
4) adopt electric plating method, electroplate 200 ± 5 microns iron-nickel alloy 6 at the chromium-copper film surface; Then silicon slice placed the potassium hydroxide aqueous solution of concentration 33 ± 1% corrosion 30 ± 5 minutes, remove the residue silicon fiml in the center-side 4 of terminal groove 3 and coil groove 2, etch away residue silicon dioxide film in these two holes with buffered hydrofluoric acid again, expose the chromium of sputter;
5) at positive sputter one deck chromium-copper film of silicon chip; Utilize photoresist 7 to form the electroforming mould then, the electricity consumption copper coating forms magnet exciting coil 8 and filled end pilot trench 3 again;
6) stripping photoresist is removed the copper beyond the coil, and the silicon chip surface rotation generates polyimide film 9 then, and makes respectively hole 10 and the hole 11 corresponding with the outer end 4 ' of terminal groove 3 and coil groove 2 on polyimide film 9 by lithography; Then polyimides being carried out imidization handles;
7) at polyimide film (9) upper surface sputtered film silver, the position photoetching of (10) and hole (11) obtains magnet exciting coil terminal (12) in the hole then, obtains two relay contacts (13) in the center-side 4 corresponding position photoetching of polyimide film (9) upper surface and coil groove 2;
8), electroplate thick 10 ± 1 microns of sacrifice layer copper film successively to behind polyimide film 9, magnet exciting coil terminal 12 and the relay contact 13 sputter chromium-copper films; Then utilize photoresist 14 to obtain moving armature casting mold 15;
9) behind about 5 ± 1 microns of the electroplating iron-nickel film, remove photoresist 14 and corrosion sacrifice layer copper and resilient coating chromium, obtain moving armature 16.
The micro electromagnetic relay of present embodiment manufacturing has reached aforesaid purpose and effect.
Claims (3)
1, a kind of micro electromagnetic relay is characterized in that, it includes magnet exciting coil (8), magnet exciting coil terminal (12), relay contact (13), moving armature (16) and silicon substrate (19); Silicon substrate (19) front has and is the coil groove (2) that the snail line distributes and the terminal groove (3) of shrinkage pool shape, magnet exciting coil (8) is set in the coil groove (2), be provided with the metal of conduction in the terminal groove (3), the front of silicon substrate (19) with terminal groove (3) and the corresponding position, outer end (4 ') that is the coil groove (2) that the snail line distributes be provided with magnet exciting coil terminal (12), magnet exciting coil terminal (12) respectively with terminal groove (3) in metal and magnet exciting coil (8) electrical coupling in the coil groove (2), the front face surface of silicon substrate (19) is provided with insulating barrier (20), be provided with two relay contacts (13) on the surface of insulating barrier (20), it is fixing that the front of silicon substrate (19) also is provided with an end and the silicon substrate (19) of iron-nickel alloy making, the other end can be communicated with the moving armature (16) of two relay contacts (13) downwards; The back side of silicon substrate (19) has magnetic core hole (17) at center-side (4) correspondence position with terminal groove (3) and coil groove (2), bottom, magnetic core hole (17) is attached with the Armco magnetic iron nickel alloy, and with terminal groove (3) in metal and magnet exciting coil (8) electrical coupling in the coil groove (2), be disposed with the chromium-copper thin layer (5) of sputter growth by the hole of magnetic core hole (17) towards silicon substrate back side direction, and not only done the magnetic circuit part, but also double as magnetic core hole (17) between the layer of iron-nickel alloy (6) of electrical coupling.
2, a kind of micro electromagnetic relay according to claim 1, it is characterized in that, the back side of described silicon substrate (19) have with the positive not etching of silicon substrate (19) saturating but adhere to the Armco magnetic iron nickel alloy and with the corresponding magnetic conductive hole of position fixed ends (18) of moving armature (16).
3, a kind of manufacture method of micro electromagnetic relay is characterized in that, its manufacture method step is:
1) adopt chemical Meteorological Act at the two-sided grown silicon nitride film of silicon chip (1), next at silicon chip back side photoetching magnetic core hole (17) and magnetic conductive hole (18), etch silicon in potassium hydroxide aqueous solution then, hole not etching is saturating;
2), and in potassium hydroxide aqueous solution, etch groove at the profile of the front lighting groove ring recess (2) of silicon chip; With silicon chip, silicon face growth one deck is used for the silica membrane (1 ') of intercoil insulation then;
3) adopt photoetching process, the silica membrane that the center-side (4) of terminal groove in silicon front (3) and coil groove (2) is located erodes and exposes silicon; Then at silicon back spatter growth chromium-copper film (5);
4) adopt electric plating method, at chromium-copper film surface electroplating iron-nickel alloy (6), then silicon slice placed is corroded in potassium hydroxide aqueous solution, remove the residue silicon fiml in the center-side (4) of terminal groove (3) and coil groove (2), etch away residue silicon dioxide film in these two holes with buffered hydrofluoric acid again, expose the chromium of sputter;
5) at positive sputter one deck chromium-copper film of silicon chip; Utilize photoresist (7) to form the electroforming mould then, the electricity consumption copper coating forms magnet exciting coil (8) and filled end pilot trench (3) again;
6) stripping photoresist is removed coil copper in addition, and the silicon chip surface rotation generates polyimide film (9) then, and makes corresponding with the outer end (4 ') of terminal groove (3) and coil groove (2) respectively hole (10) and hole (11) on polyimide film (9) by lithography; Then polyimides being carried out imidization handles;
7) at polyimide film (9) upper surface sputtered film silver, the position photoetching of (10) and hole (11) obtains magnet exciting coil terminal (12) in the hole then, obtains relay contact (13) in polyimide film (9) upper surface photoetching;
8) to behind polyimide film (9), magnet exciting coil terminal (12) and relay contact (13) the sputter chromium-copper film, electroplate the sacrifice layer copper film, then utilize photoresist (14) to obtain moving armature casting mold (15);
9) electroplating iron-nickel film is removed photoresist (14) and corrosion sacrifice layer copper and resilient coating chromium, obtains moving armature (16).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03146114 CN1252770C (en) | 2003-07-23 | 2003-07-23 | Miniature electromagnet relay and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03146114 CN1252770C (en) | 2003-07-23 | 2003-07-23 | Miniature electromagnet relay and its manufacturing method |
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| Publication Number | Publication Date |
|---|---|
| CN1479336A true CN1479336A (en) | 2004-03-03 |
| CN1252770C CN1252770C (en) | 2006-04-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03146114 Expired - Fee Related CN1252770C (en) | 2003-07-23 | 2003-07-23 | Miniature electromagnet relay and its manufacturing method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111455438A (en) * | 2020-03-11 | 2020-07-28 | 贵州振华群英电器有限公司（国营第八九一厂） | Local electroplating fixture for relay base |
| CN113460955A (en) * | 2021-06-30 | 2021-10-01 | 上海交通大学 | Manufacturing method of fast micro-electromechanical fluxgate chip |
| CN114141470A (en) * | 2021-11-29 | 2022-03-04 | 中国工程物理研究院电子工程研究所 | Micro-area magnetizing device and method based on MEMS (micro-electromechanical systems) micro-coil |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI683337B (en) * | 2018-10-05 | 2020-01-21 | 松川精密股份有限公司 | Miniature relay |
-
2003
- 2003-07-23 CN CN 03146114 patent/CN1252770C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111455438A (en) * | 2020-03-11 | 2020-07-28 | 贵州振华群英电器有限公司（国营第八九一厂） | Local electroplating fixture for relay base |
| CN111455438B (en) * | 2020-03-11 | 2022-07-15 | 贵州振华群英电器有限公司（国营第八九一厂） | Local electroplating fixture for relay base |
| CN113460955A (en) * | 2021-06-30 | 2021-10-01 | 上海交通大学 | Manufacturing method of fast micro-electromechanical fluxgate chip |
| CN113460955B (en) * | 2021-06-30 | 2024-03-08 | 上海交通大学 | Method for manufacturing fast microcomputer electromagnetic passgate chip |
| CN114141470A (en) * | 2021-11-29 | 2022-03-04 | 中国工程物理研究院电子工程研究所 | Micro-area magnetizing device and method based on MEMS (micro-electromechanical systems) micro-coil |
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| CN1252770C (en) | 2006-04-19 |
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