CN1475863A - 光刻装置和器件的制造方法 - Google Patents

光刻装置和器件的制造方法 Download PDF

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CN1475863A
CN1475863A CNA03143858XA CN03143858A CN1475863A CN 1475863 A CN1475863 A CN 1475863A CN A03143858X A CNA03143858X A CN A03143858XA CN 03143858 A CN03143858 A CN 03143858A CN 1475863 A CN1475863 A CN 1475863A
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patterning device
program control
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CN1332267C (zh
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P・M・M・利布雷茨
P·M·M·利布雷茨
布莱克尔
A·J·布莱克尔
罗普斯特拉
E·R·罗普斯特拉
格雷弗
H·波尔格雷弗
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/70991Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70283Mask effects on the imaging process
    • G03F7/70291Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices

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Abstract

一种光刻装置,应用从计算机10发出的控制信号来驱动两个空间光调节器11,12,为投射在两个基底19,20上的两个独立的投射光束13,14构图。

Description

光刻装置和器件的制造方法
技术领域
本发明涉及一种光刻投射装置,包括:
-辐射***,用于提供辐射的投射光束;
-程控构图部件,用于根据所需图案对投射光束进行构图;
-基底台,用于保持基底;
-投射***,用于将带图案的光束投射到基底的靶部上,
-控制***,用于根据所需图案向程控构图部件提供控制信号。
背景技术
光刻投射***常用于集成电路(IC)、平面显示器和其它拥有精良结构器件的制造。程控构图部件产生对应于例如IC单额层的图案,该图案成像在已经覆盖有辐射敏感材料(抗蚀剂)层的基底(硅片或玻璃图版)的靶部(例如包括部分、一个或者多个电路小片(die))上。
在这种成像步骤之前,可以对基底进行各种处理,如涂底漆,涂敷抗蚀剂和软烘烤。在曝光后,可以对基底进行其它的处理,如曝光后烘烤(PEB),显影,硬烘烤和测量/检查成像特征。以这一系列工艺为基础,形成保护基底的图案层。一种或多种图案层处理,如镀膜、蚀刻、离子注入(掺杂)、金属化处理、氧化、化学—机械抛光等,每一步骤的完成都将形成或改变器件的图案层。如果需要多层,那么对每一新层重复全部步骤或者其变化。最终,在基底(晶片)上出现器件阵列。然后采用例如切割或者锯断的技术将这些器件彼此分开,单个器件可以安装在载体上,与管脚等连接。关于这些步骤的进一步信息可从例如Peter van Zant的 “微型集 成电路片制造:半导体加工实践入门(Microchip Fabrication:A Practical Guide toSemiconductor Processing)”一书(第三版,Peter van Zant著,McGraw Hill PublishingCo.,1997,ISBN 0-07-067250-4)中获得,这里作为参考引入。
一个完整的基底在其整个表面具有量级为3×1013的像素。为了实现每小时用具有大约30-40×106像素的程控构图部件对5个晶片的全部进行曝光,需要大约每250微秒就对程控构图部件更新数据,这占据了曝光的所需的时间和最后期限,即以4kHZ的速率。假定每个像素需1个字节的数据,则数据必须以约4×1012位/秒的速率转换。以所需速率从表示掩模图案的文件计算出该数据是个难题,这需要高速的、因而也较贵的计算机。
发明概述
本发明的一个目的是提供一种使用生产能力提高的程控构图部件的光刻投射装置。
根据本发明的如开始段落中所述的光刻装置实现了这个和其它目的,其特征在于,第二程控构图部件用于根据所述所需图案对辐射的第二投射光束构图;
-第二基底台,用于保持第二基底;以及
-第二投射***,用于将第二带图案的光束投射到第二基底的靶部上;
其中所述控制***也提供所述控制信号根据所述所需图案以设定所述第二程控构图部件。
使用第二程控构图部件用与第一程控构图部件相同数据得到的相同图案使第二基底曝光,基本上使光刻投影装置的生产能力翻倍。换句话说,它可以提高装置的成本效率。根据本发明,具有两个基底台的这种装置具有两个用于使基底曝光的稳定的位置。
为了对每个构图部件提供适当的控制信号,每个程控构图部件都可以使用位置校准单元。这些单元对控制部件产生的信号进行位置校准,以保证两个程控构图部件的正确响应。
可以使用一个辐射***,其辐射投射光束被分成为两束,每个都由程控构图部件进行构图。优点是降低了光刻投射装置的成本。或者,可以提供两个辐射***,每个程控构图部件有一个。这种装置的主要成本会增加,但每个构图光束的亮度大于其中分离一个辐射***的光束的装置,因此降低了所需要的曝光时间,从而提高了装置的生产能力。
第一和第二基底台、第一和第二程控构图部件、第一和第二投射***安装在共用基架上,大体生成一单个整体装置。或者,第一基底台、第一程控构图部件和第一投射***可以安装在第一基架上,而第二基底台、第二程控构图部件和第二投射***安装在独立的第二基架上。后一种设置有效地提供了两个独立的装置,从而减小了一部分产生干扰而影响第二部分的精确度的风险。
根据本发明的另一方面,提供一种器件制造的方法,包括如下步骤:
-提供第一基底;
-应用辐射***提供第一辐射投射光束;
-应用控制***产生控制信号,所述控制信号用于在第一程控构图部件中产生所需要的图案;
-应用所述第一程控构图部件对第一投射光束进行构图;
-把第一带图案的辐射光束投射到第一基底的靶部上;
其特征在于:
-提供第二基底;
-应用所述的控制信号在第二程控构图部件中产生所需图案;
-第二程控构图部件对第二投射光束进行构图;
-把第二带图案的光束投射到第二基底的靶部上。
根据发明的另一方面,一种用于控制光刻投射装置的计算机程序,包括为指示装置按照下列步骤运行的代码部件:
-产生控制信号,用于在第一程控构图部件中产生所需图案;
-使用所述第一程控构图部件对第一投射光束构图;
-把第一带图案的光束投射到基底的靶部上;
-其特征在于所述计算机程序还包括指示装置按照下列步骤运行的代码部件:
-应用所述控制信号在第二程控构图部件中产生所述所需图案;
-应用所述第二程控构图部件对第二投射光束构图;
-把所述第二带图案的光束投射到所述第二基底的靶部上。
这里使用的术语“程控构图部件”应广义地解释为能够给入射的辐射光束赋予带图案的截面的部件,其中所述图案与要在基底的靶部上形成的图案一致;本文中也使用术语“光阀”和“空间光调节器”(SLM)。这种构图部件的实施例包括:
程控反射镜阵列。其可以包括具有一粘弹性控制层和一反射表面的矩阵可寻址表面。这种装置的理论基础是(例如)反射表面的寻址区域将入射光反射为衍射光,而非可寻址区域将入射光反射为非衍射光。用一个适当的空间滤光器,从反射的光束中过滤所述非衍射光,只保留衍射光到达基底;按照这种方式,光束根据矩阵可寻址表面的寻址图案而产生图案。也可以用相应的方式使用光栅光阀(GLV)阵列。每个光栅光阀包括许多可变形的反射带,它们可以彼此相关变形,从而形成反射入射光作为衍射光的光栅。程控反射镜阵列的另一实施例利用微小反射镜的矩阵排列,通过使用适当的局部电场,或者通过使用压电致动器装置,使得每个反射镜能够独立地关于一轴倾斜。再者,反射镜是矩阵可寻址的,由此已定址的反射镜以不同的方向将入射的辐射光束反射到无地址的反射镜上;按照这种方式,根据矩阵可寻址反射镜的定址图案对反射光束进行构图。可以用适当的电子装置进行该所需的矩阵寻址。在上述两种情况中,构图部件可包括一个或者多个程控反射镜阵列。反射镜阵列的更多信息可以从例如美国专利US5,296,891、美国专利US5,523,193、PCT专利申请WO 98/38597和WO 98/33096中获得,这些文献在这里引入作为参照。
程控LCD阵列,例如由美国专利US 5,229,872给出的这种结构,它在这里引入作为参照。
应当注意,在采用前期偏差特征、光学接近修正特征、相变技术和多种曝光技术的情况下,“显示”在程控构图部件上的图案与最终转移到基底层上或基底上的图案有很大不同。
简单起见,投射***可称为“透镜”。然而,这一术语应进一步解释为包含不同类型的投射***,包括折射光学,反射光学,反(射)折射的***和微透镜排列。需理解本申请中所用的术语“投射***”是指把带图案的光束从程控构图部件转移到基底上的任何***。辐射***还可以包括根据这些设计类型中任一设计的操作部件,该操作部件用于操纵、整形或者控制辐射的投射光束,这种部件在下文还可共同地或者单独地称作“镜头”。已经提出用折射率大于1的液体填充投射***的最后元件和基底之间的空间。这使得较小的特征也能够成像,因为曝光辐射在液体中波长较短。本发明可以应用这种类型的装置。另外,光刻装置可以具有两个或者多个基底台(和/或两个或者多个掩模台)。在这种“多级式”器件中,可以并行使用这些附加台,或者可以在一个或者多个台上进行准备步骤,而一个或者多个其它台用于曝光。例如在美国专利US5,969,441和WO98/40791中描述的二级光刻装置,这里作为参考引入。
尽管在本文中,本发明的装置具体用于制造IC,但是应当明确理解这些装置还可有其它方面的应用。如,可以应用于集成光学***的制造,磁性域存储器指导和检测图案、液晶显示板、薄膜磁头、薄膜晶体管液晶显示器、印刷电路板(PCB)等。
在本文中,使用的术语“辐射”和“光束”包含所有类型的电磁辐射,包括紫外辐射(例如具有365,248,193,157或者126nm的波长)和EUV(远紫外辐射,例如具有5-20nm的波长范围),和粒子束,如离子束或者电子束。
附图说明
现在仅通过举例的方式,参照附图描述本发明的实施例,其中:
图1表示本发明实施例的光刻投射装置;
图2表示本发明光刻投射装置的横截面;
在图中,相同的附图标记表示相同的部分。
具体实施方式
实施例1
图1示意性地表示本发明一个具体实施例的光刻投射装置。该装置包括:
辐射***Ex、IL,用于提供辐射投射光束PB(如UV辐射),在这个具体例子中也包括辐射源LA;
程控构图部件PPM(如程控反射镜阵列),用于给投射光束提供图案;通常,程控构图部件的位置相对于元件PL固定;但它也可以与使其相对于元件PL准确定位的定位部件连接;
目标台(基底台)WT,设有用于保持基底W(例如涂敷抗蚀剂的硅晶片)的基底保持器,并与用于将基底相对于元件PL精确定位的定位装置连接;
投射***(“透镜“)PL(如石英和/或CaF2透镜***或用这类材料制作的包含透镜元件的反折射***,或者反射镜***),用于把带图案的光束投射到基底W的靶部C(如包括一个或多个电路小片)上;投射***可以把程控构图部件的图像投射到基底上;或者,投射***可以投射第二源的像,程控构图部件的元件作为该第二源的光闸;投射***还可以包括微透镜阵列(已知的MLA),例如来形成第二源并把微点投射到基底上。
如这里所描述的,该装置是反射型(即具有反射程控构图部件)。但是,通常,它也可以是透射型(即具有透射程控构图部件)。
源LA(例如准分子激光器)产生辐射光束。该光束直接或经过调节部件例如光束扩展器Ex后进入照明***(发光器)IL。发光器IL可以包括调整部件AM,用于设定光束中亮度分布的外部和/或内部的径向宽度(通常分别指σ外部和σ内部)。另外,其通常包括各种其它元件,例如积分器IN和电容器CO。这样,撞击到掩模MA上的光束PB在其横截面上具有理想的均匀性和亮度分布。
应当注意,图1的源LA可以位于光刻投射装置的外壳内(例如当源LA是水银灯时通常是这样),但它也可以远离光刻投射装置,其产生的光束可以被引导进装置中(例如在适当的定向反射镜的帮助下);在源LA是准分子激光器时通常是后一种情况。本发明及权利要求涵盖这两种情况。
光束PB然后入射到程控构图部件PPM上。由程控构图部件PPM反射后,光束PB通过投射***PL,该***将光束PB聚焦在基底W的靶部C上。在定位装置(和干涉测量装置IF)的辅助下,基底台WT可以精确地移动,以便例如在光束PB的光路中定位不同的靶部C。类似的,例如在扫描期间,可以使用程控构图部件PPM的定位部件准确校正程控构图部件PPM相对于光束PB的光路的位置。通常,用图1中未明确显示的长冲程模块(粗略定位)和短行程模块(精确定位),可以实现目标台WT的移动。类似***也可以用来使程控构图部件定位。应当理解,投射光束可以作其它/附加运动,而目标台和/或程控构图部件可以具有固定位置以提供所需的相对运动。
尽管本发明的光刻装置此处被描述为用于曝光基底上的防蚀层,但本发明不限于这一用途,该装置还可用于投射带图案的投射束,以用在在腐蚀光刻中。
所描述的装置可以应用于四个优选模式:
1.步进模式:程控构图部件上的整个图案被一次投射(即单“闪”)到靶部C上。然后基底台WT沿x和/或y方向移动,以使不同的靶部C能够由光束PB照射。
2.扫描模式:基本与步进模式相同,但是所给的靶部C没有暴露在单“闪”中。取而代之的是,掩模台MT沿给定的方向(所谓的“扫描方向,例如y方向”)以速度v移动,以使投射光束PB扫描程控构图部件;同时,基底台WT沿相同或者相反的方向以速度V=Mv同时移动,其中M是镜头PL的放大率。在这种方式中,可以曝光相当大的靶部C,而没有牺牲分辨率。
3.脉冲模式:程控构图部件基本保持不动,应用脉冲辐射源把整个图案投射在基底的靶部C上。基底台WT匀速移动,使投射光束PB扫描穿过基底W的一条线。在辐射***的脉冲之间按需要更换程控构图部件上的图案,并且这些脉冲被定时,以便把连续的靶部C在基底的所需位置上曝光。随后,投射光束扫描基底W以使基底的一条完整的图案曝光。重复该过程,直到整个基底被逐线曝光。
4.连续扫描模式:基本与脉冲模式相同,但是使用基本恒定的辐射源,当投射光束扫描过基底并曝光时,程控构图部件上的图案被更新。
也可采用上述模式的结合和/或改进或者完全不同的模式。
图2表示本发明光刻投射装置的横截面。计算机10产生数据,以便在空间光调节器11或其它程控构图部件上形成图案。同一数据也用于在第二空间光调节器12或其它程控构图部件上形成图案。空间光调节器11和12上的图案用于对投射光束13,14构图,以产生带图案的投射光束15,16。投射光学仪器17,18把带图案的光束投射到基底19,20上。以此种方式,从单个计算机10发出的数据用于驱动空间光调节器以使两个基底选择性地曝光。
为了保证两个空间光调节器11,12正确反映计算机10产生的控制信号,控制信号会在提供给第一和第二空间光调节器11、12前,分别发送至第一和第二位置校准单元21,22。校准单元21,22用于校准信号,使信号的最大值和最小值处于所需的水平并在两者之间提供正确的灰度级。
位置校准单元21,22可包括一个查找表,该表含有空间光调节器中每个像素的任何需要的校正量。对计算机10产生的像素数据进行校正,以产生将反射镜设定在空间光调节器中而获得校正灰度级所需的输入。
在令一个实施例中,对计算机10用来产生空间光调节器的像素数据的主文件进行修正,从而不需要对其中一个空间光调节器进行位置校准,并且其它空间光调节器的位置校准单元对此进行补偿。
可使用一个单个辐射信号光源来产生两个投射光束13,14。例如辐射***发出的投射光束可透射穿过分束器以产生两个投射光束13,14。但是,每一个辐射光束13,14的强度大约是原始辐射光束的一半。因此对于给定的辐射源,曝光的时间会增加。在本发明的其它实施方案中,装置包括两个辐射***,第一个产生的辐射光束13由第一空间光调节器构图,第二个产生的辐射光束14由第二空间光调节器12构图。
本发明还进一步包括对投射光束构图的空间光调节器,其具有从计算机10发出的相同的控制信号。例如,计算机10产生的信号提供给另一光刻投射装置的空间光调节器。
第一和第二基底台,第一和第二投射***,以及第一和第二程控构图部件可以安装在一个与地面产生的振动隔离的共用基架上。因此,装置可有效地形成独立单元。所用的辐射***和第二辐射***,也可以安装在共用基架上。或者,装置可分成两个装置单元,第一基底台、第一程控构图部件和第一投射***安装在第一基架上,第二基底台、第二程控构图部件和第二投射***安装在第二独立基架上。因此,装置被有效的分成了两个独立的子单元,使一个对另一个的干扰例如振动最小化。以前,如果应用的话,单个辐射***或两个辐射***可以安装在第一和第二基架中的一个或两个上。或者,第一和第二子单元也可以具有基本独立的基架,但装置的一个或多个元件如投射***可共用一个共用架。
应当理解,在装置的第一和第二子单元(包括第一和第二程控构图部件)之间所共享的控制***的范围不同。例如,控制***可以接收与所需图案相应的图案数据并将其转换成驱动信号,该信号用于直接设定第一和第二程控构图部件。或者,控制***给每个程控构图部件提供图案数据,这些程控构图部件会分别把图案数据转换成设定程控构图部件的驱动信号。在后一种情况中,控制***可为在基底上产生的整个图案提供图案数据,其中程控构图部件将在各程控构图部件上每个时刻产生的独立的段中中止图案数据,或者控制***可以中止图案数据并只在每个程控构图部件的每个时刻提供图案数据的相关部分。
还应当理解,虽然上面是针对使第一和第二基底曝光的第一和第二程控构图部件来描述本发明的,但本发明不限于此,多个程控构图部件可以以相应的方式使多个基底曝光。
虽然上面已经描述了本发明的具体实施方案,但应当理解,可以以除上述之外的其它方式实施本发明。所作的描述对本发明不起限制作用。

Claims (8)

1.一种光刻投射装置,包括:
-用于提供第一辐射投射光束的辐射***;
-用于根据所需图案对第一投射光束构图的程控构图部件;
-用于保持第一基底的第一基底台;
-用于把第一带图案的光束投射到第一基底的靶部上的第一投射***;
-用于提供控制信号以根据所述需图案设定第一程控构图部件的控制***;
其特征在于:
-第二程控构图部件,用于根据所述所需图案对第二辐射投射光束构图;
-第二基底台,用于保持第二基底;以及
-第二投射***,用于把所述第二带图案的光束投射到第二基底的靶部上;
其中所述控制***还提供所述控制信号以根据所述所需图案来设定所述第二程控构图部件。
2.一种如权利要求1所述的光刻投射装置,其中所述装置还包括用于调整输入第一程控构图部件的控制信号的第一校准部件;和用于调整输入第二程控构图部件的控制信号的第二校准部件。
3.一种如权利要求1或2所述的光刻投射装置,其中所述辐射***还提供所述第二投射光束。
4.一种如权利要求1或2所述的光刻投射装置,其中所述装置还包括用于提供所述第二投射光束的第二辐射***。
5.一种如前述权利要求中任何一个所述的光刻投射装置,其中所述第一基底台、所述第一程控构图部件、所述第一投射***、所述第二基底台、所述第二程控构图部件、以及所述第二投射***安装在一个共用基架上。
6.一种如权利要求1到4所述的光刻投射装置,其中所述第一基底台、所述第一程控构图部件、以及所述第一投射***安装在第一基架上,所述第二基底台、所述第二程控构图部件、以及所述第二投射***安装在独立的第二基架上。
7.一种器件的制造方法,包括如下步骤:
-提供第一基底;
-使用辐射***来提供第一辐射投射光束;
-使用控制***产生控制信号,所述控制信号用于在第一程控构图部件中产生所需图案;
-使用所述第一程控构图部件对第一投射光束构图;以及
-把所述第一带图案的辐射光束投射在第一基底的靶部上;
其特征在于:
-提供第二基底;
-使用所述控制信号在第二程控构图部件中产生所述所需图案;
-使用所述第二程控构图部件对第二投射光束构图;
-把所述第二带图案的光束投射在第二基底的靶部上。
8.一种用于控制光刻投射装置的计算机程序,包括用于指示所述光刻投射装置按照下列步骤运行的代码部件:
-产生控制信号,用于在第一程控构图部件中产生所需图案;
-使用所述第一程控构图部件对第一投射光束构图;
-把第一带图案的光束投射到基底的靶部上;
其特征在于所述计算机程序还包括用于指示所述光刻投射装置按照下列步骤运行的代码部件:
-应用所述控制信号在第二程控构图部件中产生所述所需图案;
-应用所述第二程控构图部件对第二投射光束构图;
-把所述第二带图案的光束投射到所述第二基底的靶部上。
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US6870601B2 (en) 2005-03-22
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US20040041104A1 (en) 2004-03-04
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