CN1461044A - Method for preparing p-type zinc oxide film - Google Patents

Method for preparing p-type zinc oxide film Download PDF

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Publication number
CN1461044A
CN1461044A CN03129300A CN03129300A CN1461044A CN 1461044 A CN1461044 A CN 1461044A CN 03129300 A CN03129300 A CN 03129300A CN 03129300 A CN03129300 A CN 03129300A CN 1461044 A CN1461044 A CN 1461044A
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China
Prior art keywords
nitrogen
oxygen
magnetron sputtering
zinc
gas
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CN03129300A
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Chinese (zh)
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CN1208811C (en
Inventor
季振国
王超
刘坤
叶志镇
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Zhejiang University ZJU
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Zhejiang University ZJU
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Priority to CNB03129300XA priority Critical patent/CN1208811C/en
Publication of CN1461044A publication Critical patent/CN1461044A/en
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Publication of CN1208811C publication Critical patent/CN1208811C/en
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The method for preparing p-type zinc oxide film by using magnetron sputtering process is characterized by that it uses metal zinc as target for magnetron sputtering, and introduces nitrogen gas or nitrogen gas and oxygen gas into working gas argon gas as reactant gas, makes the pressure of magnetron sputtering vacuum chamber be 10(-1)Pa-10(o)Pa, the ratio of nitrogen flow and argon flow be in the range of 1:10-1:1, and the ratio of oxygen flow anjd argon flow be in the range of 0:1-1:1, then makes the obtained nitrogen-oxygen-zinc film undergo the process of heat treatment in atmosphere or oxygen atmosphere, its heat treatment temp. is 300-500 deg.c and treatment time is 0.5-5 hr. so as to obtain the invented product.

Description

A kind of method for preparing p type zinc-oxide film
Technical field
The present invention relates to the preparation method of semiconductive thin film.Specifically, be preparation method about p type zinc-oxide film.
Background technology
Zinc oxide is a kind of photoelectric material of up-and-coming royal purple wave band, and potential application prospect is arranged aspect photoelectric device.But the p type doping techniques of zinc oxide never has fine solution, can't form homogeneous pn junction, has influenced the application of zinc oxide in photoelectric device.
Summary of the invention
The object of the present invention is to provide a kind of method of the p of preparation type zinc-oxide film.
The inventive method is at magnetron sputtering process, feeds nitrogen or nitrogen and oxygen in addition as reaction gas in the working gas argon gas, acquisition p type zinc-oxide film, used target is a metallic zinc.
This preparation method may further comprise the steps:
1) cleans substrate, remove the grease and the dirt on surface;
2) substrate being put into magnetron sputtering chamber, is the target of magnetron sputtering with the metallic zinc, is evacuated to 10 -3Pa, heated substrate makes its temperature remain on certain interior value of 100～500 ℃ of scopes, feeds the working gas argon gas, reacting gas nitrogen or nitrogen and oxygen, making pressure in vacuum tank is 10 -1Pa～10 0Between the Pa, the ratio of nitrogen flow and argon flow amount is in 1: 10～1: 1 scope, and the ratio of oxygen flow and argon flow amount is in 0: 1～1: 1 scope;
3) open the magnetron sputtering power supply, carry out magnetron sputtering plating, obtain nitrogen oxygen zinc film (ZnNxOy);
4) film with above-mentioned preparation takes out from vacuum chamber, heat-treats in atmosphere or oxygen atmosphere, and heat treatment temperature is in 300 ℃～500 ℃ scopes, and the processing time is 0.5～5 hour, gets p type zinc-oxide film.
The present invention is a sputtering target material with the metallic zinc when magnetron sputtering, is working gas with the argon gas, and nitrogen or nitrogen and oxygen are reacting gas.Oxygen molecule and nitrogen molecule are formed ion or atom by ionization when magnetron sputtering, combine the back with zinc atom that sputters out on the magnetic controlled sputtering target or zinc ion and form nitrogen oxygen zinc (ZnNxOy) film at substrate surface.Different according to nitrogen and oxygen flow, the y value in the film can change between 0-1, and the x value can change between 0.001-3, but the 3x+2y sum is smaller or equal to 2.Nitrogen oxygen zinc film heat treatment in air or oxygen with magnetron sputtering obtains makes it change nitrogenous zinc-oxide film into.Because nitrogen-atoms is 5 family's atoms, and nitrogen-atoms is 6 family's atoms, the oxygen atom that nitrogen-atoms replaces in the zinc oxide can generate the zinc-oxide film that the p type conducts electricity.
Advantage of the present invention is that principle is simple, and carrier concentration control is convenient, and operability is good.
Embodiment
Further specify the present invention below in conjunction with example.
The preparation of p type zinc-oxide film may further comprise the steps:
Making sputtering target with metallic zinc, is substrate with the quartz glass, cleans substrate at first according to a conventional method, removes the grease and the dirt on surface, then substrate is put into magnetron sputtering chamber, is evacuated to 10 -3Pa, heated substrate, keeping underlayer temperature is 100 ℃, feeds the working gas argon gas, reacting gas nitrogen, wherein the flow of argon gas is 28sccm, the flow of nitrogen is 3sccm.Open the magnetron sputtering power supply and carry out magnetron sputtering plating, pressure in vacuum tank is 5 * 10 during sputter -1Pa, sedimentation time are 1 hour, obtain the zinc nitride film.The zinc nitride film that obtains is taken out from vacuum chamber, and thermal oxidation is 3 hours in 450 ℃ of air.X-ray diffraction test shows film has become the zinc oxide structure from the zinc nitride thaumatropy.Film after the Hall effect test shows transforms is a p type zinc oxide, and hole concentration is up to 5.78 * 10 17Cm -3

Claims (1)

1.p the preparation method of type zinc-oxide film is characterized in that may further comprise the steps:
1) cleans substrate, remove the grease and the dirt on surface;
2) substrate being put into magnetron sputtering chamber, is the target of magnetron sputtering with the metallic zinc, is evacuated to 10 -3Pa, heated substrate makes its temperature remain on certain interior value of 100～500 ℃ of scopes, feeds the working gas argon gas, reacting gas nitrogen or nitrogen and oxygen, making pressure in vacuum tank is 10 -1Pa～10 0Between the Pa, the ratio of nitrogen flow and argon flow amount is in 1: 10～1: 1 scope, and the ratio of oxygen flow and argon flow amount is in 0: 1～1: 1 scope;
3) open the magnetron sputtering power supply, carry out magnetron sputtering plating, obtain nitrogen oxygen zinc film;
4) film with above-mentioned preparation takes out from vacuum chamber, heat-treats in atmosphere or oxygen atmosphere, and heat treatment temperature is in 300 ℃～500 ℃ scopes, and the processing time is 0.5～5 hour, gets p type zinc-oxide film.
CNB03129300XA 2003-06-11 2003-06-11 Method for preparing p-type zinc oxide film Expired - Fee Related CN1208811C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB03129300XA CN1208811C (en) 2003-06-11 2003-06-11 Method for preparing p-type zinc oxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB03129300XA CN1208811C (en) 2003-06-11 2003-06-11 Method for preparing p-type zinc oxide film

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CN1461044A true CN1461044A (en) 2003-12-10
CN1208811C CN1208811C (en) 2005-06-29

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1327042C (en) * 2005-03-28 2007-07-18 中国科学院半导体研究所 Method for growing single-crystal zinc oxide film by using zinc oxide buffer layer
CN100353578C (en) * 2005-11-18 2007-12-05 浙江大学 UV electroluminescence device of silicon base zinc oxide and preparation process thereof
CN100511739C (en) * 2007-04-05 2009-07-08 中国科学院半导体研究所 Method for preparing P type zinc oxide thin film through Delta isomerisation
CN100552081C (en) * 2006-12-11 2009-10-21 中国科学院上海硅酸盐研究所 A kind of method of preparing stable cavity type zinc oxide film by jigger coupling sputtering
EP2148937A1 (en) * 2007-04-27 2010-02-03 Applied Materials, Inc. Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
CN101599363B (en) * 2009-04-09 2011-11-23 上海工程技术大学 Preparation method of nitrogen-doped zinc oxide p-type diluted magnetic semiconductor material
CN102925856A (en) * 2012-11-20 2013-02-13 蚌埠玻璃工业设计研究院 Method for directly preparing nitrogen-doped zinc oxide film by taking zinc film as base material
CN104004990A (en) * 2014-06-03 2014-08-27 上海理工大学 Method for preparing amorphous transparent zinc oxide film
CN105525268A (en) * 2016-01-28 2016-04-27 南京大学 Method for improving mobility ratio and stability of ZnON thin film
CN105671507A (en) * 2016-03-18 2016-06-15 商丘师范学院 Preparation method of nitrogen-fluorine co-doped zinc oxide thin film

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1327042C (en) * 2005-03-28 2007-07-18 中国科学院半导体研究所 Method for growing single-crystal zinc oxide film by using zinc oxide buffer layer
CN100353578C (en) * 2005-11-18 2007-12-05 浙江大学 UV electroluminescence device of silicon base zinc oxide and preparation process thereof
CN100552081C (en) * 2006-12-11 2009-10-21 中国科学院上海硅酸盐研究所 A kind of method of preparing stable cavity type zinc oxide film by jigger coupling sputtering
CN100511739C (en) * 2007-04-05 2009-07-08 中国科学院半导体研究所 Method for preparing P type zinc oxide thin film through Delta isomerisation
JP2015057518A (en) * 2007-04-27 2015-03-26 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Thin film semiconductor material formed through reactive sputtering of zinc target using nitrogen gas
EP2148937A1 (en) * 2007-04-27 2010-02-03 Applied Materials, Inc. Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
CN101688286B (en) * 2007-04-27 2013-02-27 应用材料公司 Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
EP2148937A4 (en) * 2007-04-27 2013-10-09 Applied Materials Inc Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
US10629581B2 (en) 2007-04-27 2020-04-21 Applied Materials, Inc. Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
CN101599363B (en) * 2009-04-09 2011-11-23 上海工程技术大学 Preparation method of nitrogen-doped zinc oxide p-type diluted magnetic semiconductor material
CN102925856A (en) * 2012-11-20 2013-02-13 蚌埠玻璃工业设计研究院 Method for directly preparing nitrogen-doped zinc oxide film by taking zinc film as base material
CN104004990A (en) * 2014-06-03 2014-08-27 上海理工大学 Method for preparing amorphous transparent zinc oxide film
CN105525268A (en) * 2016-01-28 2016-04-27 南京大学 Method for improving mobility ratio and stability of ZnON thin film
CN105671507A (en) * 2016-03-18 2016-06-15 商丘师范学院 Preparation method of nitrogen-fluorine co-doped zinc oxide thin film
CN105671507B (en) * 2016-03-18 2017-10-17 商丘师范学院 A kind of preparation method of nitrogen fluorine codope zinc-oxide film

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