CN1449990A - Post-package technology for microelectromechinical system - Google Patents
Post-package technology for microelectromechinical system Download PDFInfo
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- CN1449990A CN1449990A CN03119029A CN03119029A CN1449990A CN 1449990 A CN1449990 A CN 1449990A CN 03119029 A CN03119029 A CN 03119029A CN 03119029 A CN03119029 A CN 03119029A CN 1449990 A CN1449990 A CN 1449990A
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Abstract
The microcomputer electric system post-packaging process relates to the field of printed circuit and integrated circuit production and microelectronic packaging technology. In the limited zone it utilizes high-temp. to obtain better bonding strength, and in the wafer region it can retain low-temp. to protect MEMS microstructure and microcircuit, at the same time it can further raise packaged air tightness. Said invented process includes the following steps: (1). on the cover plate making pit compatible with base plate MEMS device; (2). settling electrothermal insulating layer; (3). settling internal and external two rings of conductive heating hands along the pit boundary line; (4) aligning cover plate and base plate and coinciding them; and (5) inputting current into two rings of conductive heating bands for bonding them.
Description
Technical field
The present invention relates to printed circuit, integrated circuit manufacturing and microelectronic device package field.
Background technology
MEMS (Micro-ElectroMechanical systems, MEMS) technology can make sensor and actuator size be reduced to micron and nanometer scale, and the MEMS encapsulation is that with the difference of microelectronics Packaging maximum MEMS must often contact with extraneous.This makes that the MEMS encapsulation is more expensive, can account for 70～90% of device cost, and general IC (integrated circuit) packaging cost only accounts for about 30%.Therefore, the MEMS designer must consider design, technology and the reliability of encapsulation in the design initial period.As " digital micro-mirror module (DMD) ", the U.S. AD company accelerometer of American TI Company, the pressure sensor of U.S. motorola inc, be exactly because consider that from the beginning encapsulation is all highly successful.The MEMS device is necessary for and encapsulates and assemble and design, otherwise the industrialization of MEMS device will be an empty verbiage.This also is that the development of MEMS device more than ten years does not but have one of rapid industrialized reason.Technology and selection are extremely important to the performance of product, but encapsulation process often causes the inefficacy of product.Concerning each company, encapsulation is the intellectual property of each company, and no matter patent or article are all seldom seen.Someone thinks that the MEMS encapsulation should be the part that device is made in little process, thereby can solve the encapsulation problem of individual devices, but this viewpoint can not solve at the MEMS encapsulation problem of producing in enormous quantities, and therefore, general encapsulation technology has demand widely.Encapsulation technology need satisfy several requirements behind the MEMS: a) MEMS micro-structural or microcircuit are not caused damage; B) can be widely used in different MEMS technology; C) draw the mature IC encapsulation technology of development to save the research and development expense; D) in addition, some MEMS devices need the vacuum tight encapsulation, and other then need encapsulate in the environment of low temperature.Because most of MEMS have bascule, air-tight packaging is the highest form of encapsulation.This class component encapsulation is required a) to have a cavity; b) cap of a protection MEMS device, c) the powerful bonding of level Hermetic Package, d) the wafer level batch process of reduction manufacturing cost; e) protection MEMS device is in order to avoid the low temperature process of damage, and f) simplify assembling process simultaneously.
Recently, the new results of packaging technology aspect behind several MEMS have been reported.At J.T.Butler in 1997, V.M.Bright, and J.H.Comtois, " Advanced multichip module packaging ofmicroelectromechanical systems; " in Proc.1997 Int.Conf.Solid-State SensorsActuators, Transducers ' 97,1997, pp.261-264. wait the MCM method for packing of having studied a kind of advanced person, he adopts the on-chip high density interconnect technology that bare chip is embedded preprocessing, S.Vander Groen, M.Rosmeulen, P.Jansen, K.Baert, and L.Deferm, " CMOS compatible wafer scaleadhesive bonding for circuit transfer; " in Proc.1997 Int.Conf. Solid-State SensorsActuators, Transducers ' 97,1997, and pp.629-632. has reported a kind of cmos circuit switch technology based on the epoxy resin bonding, this method has overcome the surface roughness problem, but resin is not the very good material of hermetic seal.At M.B.Cohn in 1996, Y.Liang, R.T.How, and A.P.Pisano, " Wafer-to-wafer transfer ofmicrostructures for vacuum packaging, " in Proc.IEEE Solid-State Sensor ActuatorWorkshop, 1996, pp.32-35. wait and use the thick polysilicon cap of 2 μ m to carry out this brilliant unit-brilliant first vacuum encapsulation process of silicon-Jin eutectic bonding, yet there is tiny leakage in result of the test after showing 50 days.Packaging technology behind these a kind of general MEMS of the strong needs of achievements in research explanation in recent years.
As everyone knows, in bonding technology, " closely contact " and temperature are two principal elements, and bonding then is the key of device encapsulation." closely contact " is that two surfaces are lumped together, and temperature then provides the bonding energy.At nineteen eighty-three T.R.Anthony, " Anodic bonding of imperfect surfaces ", J.Appl.Phys., vol.54, pp.2419-2427,1983. studied the theoretical research of surface roughness antianode bonding technology influence, obtaining rough surface can influence bonding parameter, as temperature, time and added power.Though backflow or mechanical wiping can improve surface smoothness, these methods also are not suitable for most MEMS manufacturing process.
About temperature, many bonding methods that often use as fusion and anode linkage, need high temperature, thereby device is damaged and produce thermal stress issues.On the other hand, must improve temperature for the bonding quality that obtains.All used the silicon bonding techniques in the many in the past kinds of MEMS devices,, all needed mechanically interconnectedly to come key and on silicon chip as pressure sensor, Micropump biomedical sensor or chemical sensor.Glass usually as the anode key in the temperature range about 300-400 ℃ and material use.K.E.Peterson and P.Barth etal., " Silicon fusion bonding for pressure sensors; " in 1988 Solid-State Sensor ActuatorWorkshop, 1988, pp.177-180. has studied and has surpassed dissimilar silicon fusion bondings and silicon one silica-bound under 1000 ℃ the hot conditions.Trenson.Lee and Coln has used eutectic bonding in different application.Silicon fusion bonding is used for silicon-on-insulator technology mostly, and as silicon one silica-bound and silicon one silicon bonding, its bonding force is very strong, and this method of evidence is feasible.Unfortunately since temperature up to more than 1000 ℃ so that it encapsulates after not being suitable for MEMS.Q.-Y.Tong, G.Cha, R.Roman, and U.Gosele, " Low temperaturewafer direct bonding; " J.Microelectromech.Syst., vol.3, pp.29-35,1994.H.Takagi, K.Kikuchi, R.Maeda, T.R.Chung, and T.Suga, " Surface activated bonding of siliconwafers at room temperature, " Appl.Phys Lett., vol.68, pp.2222-2224,1996. about the report of low temperature silicon-silicon bonding, these new methods all need the surface to carry out specially treated, this can not be applied to behind the MEMS in the encapsulation.
The discovery of anode linkage can be traced back to 1969.Wajjis and Pomerantz find glass and metal under the help of auxiliary high electric field being lower than bonding in the about 200-400 of the glass melting temperature ℃ scope, this technology was widely used in sealed aperture in integrated circuit in the biology sensor and the pressure sensor afterwards.L.bowman andJ.Meindl afterwards, " The packaging of implantable integrated sensors; " IEEE Trans.Biomed.Eng., vol.BMEe-33, pp.248-255,1986.M.Esashi, " Encapsulated micromechanical sensors; " Microsyst.Technol., vol.1, pp.2-9,1994. reported the possibility that adopts different mechanism to reduce temperature, unfortunately, too much alkalinous metal on glass may pollute with high electric field to microcircuit may injure and require more smooth bonding surface, all limited anode linkage Application in Packaging behind MEMS.
Except solid type silicon bonding discussed above, also has the kind of liquid bonding.In the silicon eutectic bonding, the most general material that gold is to use.Gold can form eutectic alloy at 363 ℃ with silicon, and 363 ℃ of fusing points that are lower than proof gold or proof gold or pure silicon, for the eutectic bonding that obtains, necessary better controlled process conditions are as temperature and time.
Above-described integrated integral body heating and sealing are successfully carried out encapsulating behind the MEMS, but it has several shortcomings: at first, several high-temperature step of carrying out behind the surface processing technique of standard are because whole heating causes circuit and temperature-sensitive material to suffer damage.Secondly, back packaging technology is very concrete and relevant with technology.MEMS company and researcher must be with back packaging technology and their own little manufacturing process combinations.The 3rd, the thickness of little shell is subjected to the restriction of thin film deposition step.In last encapsulation process, thin little shell is difficult to remain intact harmless in high-pressure injection moulding.
Summary of the invention
The present invention proposes packaging technology behind a kind of MEMS, its objective is to obtain high temperature obtaining better bond strength in the restricted area, and keeps low temperature with protection MEMS micro-structural and microcircuit in brilliant unit level.Thereby the air-tightness that adopts two wall bondings further to improve encapsulation simultaneously improves the yield rate of MEMS device.
Packaging technology behind a kind of MEMS of the present invention, order comprises the steps: the pit in the processing of (1) on the cover board corresponding base plate mems device position and its corresponding size space, (2) on the cover board precipitate the electric heating insulating barrier to cover cover plate and pit inner surface, (3) on the cover board precipitate inside and outside two circle conductive heater bands along the pit boundary line, electric insulation between the two circle conductive heater bands, it is spaced apart the 5-30 micron, (4) cover plate and base plate are aimed to cover make pit just encapsulate corresponding mems device, (5) to two circle conductive heater bands difference or while input currents, between base plate and cover plate, realize bonding.
Packaging technology behind the described MEMS, it is further characterized in that: after precipitating the electric heating insulating barrier on the described cover plate, earlier on the cover board precipitate the conductive material lead-out wire, precipitate one deck electrically insulating material more thereon along the pit boundary line, and then precipitation conductive heater band.
Packaging technology behind the described MEMS behind the precipitation conductive heater band, can precipitate one deck electrically insulating material and cover the conductive heater band on the described cover plate, precipitates one deck bonding material respectively along two circle conductive heater band tracks again, implements subsequent step then.
Packaging technology behind the described MEMS, pit can adopt chemical homophase etching, out-phase etching or machined form on the described cover plate; The intermediate processing of described electric heating insulating barrier, conductive material lead-out wire, electrically insulating material, conductive heater band and bonding material can be in CVD, sputter or the evaporation a kind of; Described bonding mode can or two or morely comprehensively form for two kinds in fusion, eutectic, the scolder.
Packaging technology behind the described MEMS, cover plate can be silicon chip, glass or ceramic material, the electric heating insulating barrier can be silica material; The conductive heater band can adopt a kind of in gold, the polysilicon; Electrically insulating material can be in silicon nitride, silica or the mixture of the two a kind of; Bonding material can be in silica, gold, the polysilicon a kind of.
Packaging technology behind the described MEMS, when adopting scolder as the bonding mode, scolder is an indium.
In order to improve the productivity ratio of MEMS encapsulation, reduce the cost of MEMS encapsulation, generally adopt wafer level packaging.At first on base plate, process the MEMS chip of rectangular array, on the cover board erode away the pit of same array with homophase or out-phase etching, then precipitate one deck electric heating insulating barrier thereon, peripheral boundary trajectory along pit precipitates one deck conductive heater band again, precipitate one deck electric insulating material thereon, precipitate another layer conductive heater band again in distance pit peripheral boundary trajectory a distance (as 3 μ m) again, form inside and outside nested little heating tape.Base plate and cover plate aligning is approaching, give two little heating tapes inputs identical or different electric currents, under slight pressure, just can form two wall bondings.
In the technology that the present invention proposes, baseboard material is generally silicon, glass or pottery, and cover plate materials can be silicon, glass, ceramic material.When cover plate materials is silicon, must on the cover board precipitates one deck electric insulation layer and prevent that electric current is diffused in the cover plate.
In various bonding technologies, except that disk Direct Bonding such as anode linkage and fusion and eutectic, it is bonding material that other bonding technology all needs intermediate layer material, selects little heating tape material according to the influence that bonding technology requires the temperature that reaches and metal pair bonding quality to be brought.Adopt different bonding materials for different middle pitch layer bonding technologies.Adopt the scolder indium as the scolder bonding, if bonding material be conduction and cover plate also conduct electricity, then must on the cover board precipitate one deck electric heating insulating barrier and insulate with bonding material electric heating.
Can making little heater wire, to make the material in intermediate layer again simultaneously be polysilicon, gold.For silicon-silicon/glass fusion bonding, polysilicon had not only been made little heater wire but also as bonding material.Local silicon-glass melting bonding technology is: at first silicon device substrate deposition of silica and heavily doped phosphorus polysilicon.Pyrex (heat resistant glass) is pressed in above the polysilicon micro-heater.Give the electric current of polysilicon micro-heater input 71mA, produce 1300 ℃ high temperature, under light pressure, form the fusion bonding.For silicon-Jin eutectic bonding, gold had not only been made little heater wire but also as bonding material.Local eutectic bonding technology is: silicon chip at first thermal oxide generates oxide layer as the electric heating insulating barrier, chromium is deposited in top as adhesive linkage, precipitation of gold is as little heater wire again on it, and under 1Mpa pressure, the silicon cap (Cap) of cleaning is pressed in the top formation eutectic bonding of substrate.These two kinds of Direct Bonding technologies are simple, but have a problem: in these two kinds of technologies, the atom of little heater wire spreads easily or is molten to and makes on the cover plate that resistance changes, and temperature then changes, thereby influences the uniformity of bonding quality.Therefore must not only improve current density keeps high temperature and does not change.MEMS device for air-tightness is had relatively high expectations can preferentially adopt intermediate layer bonding technology such as scolder bonding etc.
For the scolder bonding technology, on substrate, grow earlier the thick thermal oxide layer of 1 μ m.Then on the cover board the thermal oxidation method growing silicon oxide forms micro-heater as the electric heating insulating barrier above the phosphorous doped polysilicon micro-heater then is deposited in.The LPCVD silicon oxide precipitation is in the above as electric insulation layer.Then precipitate scolder again.Because little heater wire separates with the intermediate layer, thereby has avoided the impaired of little heater wire.
The invention provides a kind of technology of local heat, this technology improves the temperature in bonding zone by local heat, but keeps low temperature in the place in contiguous bonding zone, thereby reduces the infringement of high temperature to MEMS internal circuit and temperature-sensitive material.Its local heat effect declines by resistance and produces heat behind the heater wire input current and realize, its temperature can reach 1000 ℃, in order to prevent that High temperature diffusion from not needing the place of high temperature to other, must be at neck near field precipitation one deck thermal insulation layer, this insulating barrier can reduce to 1000 ℃ high temperature 80 ℃.Thereby entire device keeps low temperature.In order to prevent that electric current from flowing to base plate and cover plate, this thermal insulation layer also is an electric insulation layer simultaneously.
In order to improve the air-tight packaging effect of MEMS device, improve the service life and the yield rate of product, the present invention adopts two wall formula bonding technologies promptly to adopt two kinds of identical or different bonding technologies such as fusion-fusion bonding, fusion-scolder bonding etc. simultaneously.Though two little heater wire has increased several microns width, because bonding quality is improved, this technology is suitable for particularly army's mark MEMS product of MEMS device that air-tightness has relatively high expectations.
The two wall bonding technologies of local heat of the present invention are brought several opportunities: at first, can obtain better, temperature control faster; Secondly, improve bonding quality with high temperature; The 3rd, require the new bonding mechanism of high temperature, can be applicable among the MEMS as soldering, therefore, the two wall bonding technologies of local heat will obtain potential application in the MEMS device widely, and be expected to promote the development of MEMS encapsulation field.
Description of drawings
Fig. 1 represents embodiments of the invention 1,
Fig. 2 is embodiments of the invention 2.
The specific embodiment
Further specify enforcement state of the present invention below in conjunction with Fig. 1, Fig. 2.
Embodiment 1: gold, polysilicon two materials are not only as heating material but also as bonding material embodiment.
On silicon base plate 1, grow earlier the thick thermal oxide silicon dioxide layer 2 of 1 μ m.Then produce the micro-structural 3 of resonator thereon, then process pit 5 at cover plate 4 corresponding base plate mems device positions, precipitate the thick thermal oxide silicon dioxide layer 6 of 1 μ m again, on the cover board precipitate the thick phosphorous doped polysilicon of 1.6 μ m then along the pit boundary line as inner ring conductive heater band 7, on the cover board precipitate the thick LPCVD silica of 0.45 μ m as electric insulation layer 8 on the inner and outer boundary line again.Then precipitate 0.15 μ m chromium 10 to strengthen the adhesive force of gold on the boundary line outside again.Precipitate the thick gold 11 of 1 μ m on the boundary line outside again, cover plate is pressed in above the base plate.Give the electric current of two little heater wire input 45mA, 15mA respectively, thereby form bonding.Article two, up to 800 ℃ with 370 ℃, institute's plus-pressure is 0.2Mpa to the micro-heater temperature by the infrared radiation thermometer non-cpntact measurement, is bonded in 1.5 minutes and finishes, and the bond strength of tension test with the inspection interface carried out at the para-linkage position.The experimental result demonstration has formed strong fusion and the two wall bondings of eutectic.
Embodiment 2: adopt the fusion of local heat and the two wall bonding technologies of scolder to make and encapsulate micro-resonator.
On silicon base plate 1, grow earlier the thick thermal oxide silicon dioxide layer 2 of 1 μ m.Then produce the micro-structural 3 of resonator thereon, then process pit 5 at cover plate 4 corresponding base plate mems device positions, precipitate the thick thermal oxide silicon dioxide layer 6 of 1 μ m again, on the cover board precipitate the thick phosphorous doped polysilicon of 1.45 μ m then along the pit boundary line as inner ring conductive heater band 7, on the cover board precipitate the thick phosphorous doped polysilicon of 0.45 μ m as outer ring conductive heater band 9 on the boundary line, outside again, then on the cover board precipitate the thick LPCVD silica of 0.45 μ m as electric insulation layer 8, precipitate 0.15 μ m chromium 10 to strengthen the adhesive force of scolder indium on the boundary line outside again.Precipitate the thick indium scolder bonding material 11 of 1 μ m on the boundary line outside again, LPCVD silica-bound material and concordant with the indium of outer ring on the inner edge boundary line is pressed in cover plate above the base plate again.Give the electric current of two little heater wire input 60mA, 20mA respectively, thereby form bonding.Article two, up to 1000 ℃ with 300 ℃, institute's plus-pressure is 0.2Mpa to the micro-heater temperature by non-cpntact measurement, is bonded in 2 minutes and finishes, and tension test is carried out to check the bond strength of interface in the para-linkage position.The experimental result demonstration has formed strong fusion and the two wall bondings of scolder.
Claims (8)
1. packaging technology behind the MEMS, order comprises the steps:
(1) pit on the cover board corresponding base plate mems device position processing and its corresponding size space,
(2) on the cover board precipitate the electric heating insulating barrier with covering cover plate and pit inner surface,
(3) on the cover board precipitate inside and outside two circle conductive heater bands along the pit boundary line, electric insulation between the two circle conductive heater bands, it is spaced apart the 5-30 micron,
(4) cover plate and base plate aimed to cover make pit just encapsulate corresponding mems device,
(5) to two circle conductive heater bands difference or while input currents, between base plate and cover plate, realize bonding.
2. packaging technology behind the MEMS as claimed in claim 1, it is characterized in that: after precipitating the electric heating insulating barrier on the described cover plate, earlier on the cover board precipitate the conductive material lead-out wire, precipitate one deck electrically insulating material more thereon along the pit boundary line, and then precipitation conductive heater band.
3. packaging technology behind the MEMS as claimed in claim 1 or 2, it is characterized in that: after precipitating the conductive heater band on the described cover plate, precipitation one deck electrically insulating material covers the conductive heater band, precipitates one deck bonding material respectively along two circle conductive heater band tracks again, implements subsequent step then.
4. packaging technology behind the MEMS as claimed in claim 2 is characterized in that pit adopts chemical homophase etching, out-phase etching or machined form on the described cover plate; The intermediate processing of described electric heating insulating barrier, conductive material lead-out wire, electrically insulating material and conductive heater band is a kind of in CVD, sputter or the evaporation; Described bonding mode is in fusion, eutectic, the scolder two kinds or two or morely comprehensively forms.
5. packaging technology behind the MEMS as claimed in claim 3 is characterized in that pit adopts chemical homophase etching, out-phase etching or machined form on the described cover plate; The intermediate processing of described electric heating insulating barrier, conductive material lead-out wire, electrically insulating material, conductive heater band and bonding material is a kind of in CVD, sputter or the evaporation; Described bonding mode is in fusion, eutectic, the scolder two kinds or two or morely comprehensively forms.
6. packaging technology behind the MEMS as claimed in claim 4 is characterized in that cover plate is silicon chip, glass or ceramic material, and the electric heating insulating barrier is a silica material; The conductive heater band adopts gold or polysilicon; Electrically insulating material is a kind of of silicon nitride, silica or the mixture of the two.
7. packaging technology behind the MEMS as claimed in claim 5 is characterized in that cover plate is silicon chip, glass or ceramic material, and the electric heating insulating barrier is a silica material; The conductive heater band adopts a kind of in gold, the polysilicon; Electrically insulating material is a kind of in silicon nitride, silica or the mixture of the two; Bonding material is a kind of in silica, gold, the polysilicon.
8. as packaging technology behind claim 4,5, the 6 or 7 described MEMSs, when it is characterized in that adopting scolder as the bonding mode, scolder is an indium.
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| CN1330557C (en) * | 2004-04-13 | 2007-08-08 | 财团法人汉城大学校产学协力财团 | Method of packaging MEMS device in vacuum state and MEMS device vacuum-packaged using the same |
| CN100430708C (en) * | 2004-07-21 | 2008-11-05 | 华新丽华股份有限公司 | Manufacture of electromechanical element, microelectro mechanical and resonance element and air tightness test method |
| US7668415B2 (en) | 2004-09-27 | 2010-02-23 | Qualcomm Mems Technologies, Inc. | Method and device for providing electronic circuitry on a backplate |
| US7701631B2 (en) | 2004-09-27 | 2010-04-20 | Qualcomm Mems Technologies, Inc. | Device having patterned spacers for backplates and method of making the same |
| US7746537B2 (en) | 2006-04-13 | 2010-06-29 | Qualcomm Mems Technologies, Inc. | MEMS devices and processes for packaging such devices |
| CN101898746A (en) * | 2010-04-16 | 2010-12-01 | 东南大学 | Wafer-level integrated encapsulation method of MEMS (Micro Electric Mechanical System) devices requiring different atmosphere pressures |
| US7978396B2 (en) | 2003-08-15 | 2011-07-12 | Qualcomm Mems Technologies, Inc. | Optical interference display panel |
| US8004736B2 (en) | 2003-08-18 | 2011-08-23 | Qualcomm Mems Technologies, Inc. | Optical interference display panel and manufacturing method thereof |
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| US8115983B2 (en) | 2004-09-27 | 2012-02-14 | Qualcomm Mems Technologies, Inc. | Method and system for packaging a MEMS device |
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| CN102583218A (en) * | 2012-03-06 | 2012-07-18 | 华中科技大学 | Silicon-based airtight packaging casing |
| CN1762786B (en) * | 2004-09-27 | 2013-02-13 | 高通Mems科技公司 | System and method for protecting microelectromechanical systems array using structurally reinforced back-plate |
| US8379392B2 (en) | 2009-10-23 | 2013-02-19 | Qualcomm Mems Technologies, Inc. | Light-based sealing and device packaging |
| CN102194973B (en) * | 2010-02-02 | 2014-04-30 | 中山大学 | Wafer-grade packaging method of ultraviolet LED packaging structure |
| CN105439079A (en) * | 2014-08-18 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and preparation method thereof and electronic device |
| CN107352503A (en) * | 2016-05-09 | 2017-11-17 | 江苏英特神斯科技有限公司 | The anode linkage method and its application of polycrystalline silicon medium and glass on a kind of silicon substrate insulating barrier |
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| US8004736B2 (en) | 2003-08-18 | 2011-08-23 | Qualcomm Mems Technologies, Inc. | Optical interference display panel and manufacturing method thereof |
| CN1330557C (en) * | 2004-04-13 | 2007-08-08 | 财团法人汉城大学校产学协力财团 | Method of packaging MEMS device in vacuum state and MEMS device vacuum-packaged using the same |
| CN100430708C (en) * | 2004-07-21 | 2008-11-05 | 华新丽华股份有限公司 | Manufacture of electromechanical element, microelectro mechanical and resonance element and air tightness test method |
| CN1762786B (en) * | 2004-09-27 | 2013-02-13 | 高通Mems科技公司 | System and method for protecting microelectromechanical systems array using structurally reinforced back-plate |
| US8682130B2 (en) | 2004-09-27 | 2014-03-25 | Qualcomm Mems Technologies, Inc. | Method and device for packaging a substrate |
| US7933476B2 (en) | 2004-09-27 | 2011-04-26 | Qualcomm Mems Technologies, Inc. | Method and device for providing electronic circuitry on a backplate |
| US7668415B2 (en) | 2004-09-27 | 2010-02-23 | Qualcomm Mems Technologies, Inc. | Method and device for providing electronic circuitry on a backplate |
| US7701631B2 (en) | 2004-09-27 | 2010-04-20 | Qualcomm Mems Technologies, Inc. | Device having patterned spacers for backplates and method of making the same |
| US8045835B2 (en) | 2004-09-27 | 2011-10-25 | Qualcomm Mems Technologies, Inc. | Method and device for packaging a substrate |
| US8090229B2 (en) | 2004-09-27 | 2012-01-03 | Qualcomm Mems Technologies, Inc. | Method and device for providing electronic circuitry on a backplate |
| US8115983B2 (en) | 2004-09-27 | 2012-02-14 | Qualcomm Mems Technologies, Inc. | Method and system for packaging a MEMS device |
| US8124434B2 (en) | 2004-09-27 | 2012-02-28 | Qualcomm Mems Technologies, Inc. | Method and system for packaging a display |
| US7746537B2 (en) | 2006-04-13 | 2010-06-29 | Qualcomm Mems Technologies, Inc. | MEMS devices and processes for packaging such devices |
| US8379392B2 (en) | 2009-10-23 | 2013-02-19 | Qualcomm Mems Technologies, Inc. | Light-based sealing and device packaging |
| CN102194973B (en) * | 2010-02-02 | 2014-04-30 | 中山大学 | Wafer-grade packaging method of ultraviolet LED packaging structure |
| CN101898746B (en) * | 2010-04-16 | 2012-04-11 | 东南大学 | Wafer-level integrated encapsulation method of MEMS (Micro Electric Mechanical System) devices requiring different atmosphere pressures |
| CN101898746A (en) * | 2010-04-16 | 2010-12-01 | 东南大学 | Wafer-level integrated encapsulation method of MEMS (Micro Electric Mechanical System) devices requiring different atmosphere pressures |
| CN102583218A (en) * | 2012-03-06 | 2012-07-18 | 华中科技大学 | Silicon-based airtight packaging casing |
| CN105439079A (en) * | 2014-08-18 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and preparation method thereof and electronic device |
| CN107352503A (en) * | 2016-05-09 | 2017-11-17 | 江苏英特神斯科技有限公司 | The anode linkage method and its application of polycrystalline silicon medium and glass on a kind of silicon substrate insulating barrier |
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