CN1441465A - Method and device for regulating ion beam parallel in ion injection device - Google Patents
Method and device for regulating ion beam parallel in ion injection device Download PDFInfo
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- CN1441465A CN1441465A CN02106603A CN02106603A CN1441465A CN 1441465 A CN1441465 A CN 1441465A CN 02106603 A CN02106603 A CN 02106603A CN 02106603 A CN02106603 A CN 02106603A CN 1441465 A CN1441465 A CN 1441465A
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Abstract
A method and equipment for ion injection into work pieces (such as semiconductor wafer) includes generation of ionic beam and testing the parallel of the ionic beam to be adjusted to the required parallel state accordingly and testing the direction of the adjusted ionic beam to direct the work piece wiht the injected angle refer to the tested ionic beam direction to exercise injections with the directed work piece to be carried out by the highly parallel ionic beam.
Description
The present invention relates to the method and system of the ion injection of semiconductor wafer or other workpiece, more specifically, the present invention relates in ion implanter, regulate the method and apparatus of ion beam parallel.
It is that the conductive admixture of change is incorporated into the semiconductor wafer specification technique that ion injects.In the ion source ionization, speeding-up ion forms the ion beam of prescribed energy, and ion beam is pointed to wafer surface with required admixture.The ion penetration that has energy in the ion beam enters the loose part of semiconductor substance, and forms required conductive zone in the lattice of embedding semiconductor substance.
Ion implant systems generally includes and is used for gas or solid matter are converted to the ion source of well-defined ion beam.Ion beam is carried out mass spectral analysis to remove unwanted ionic species, then ion beam is accelerated to institute's energy requirement and also refer on objective plane.By ion-beam scanning, target moves or by the combination that ion-beam scanning and target move, ion beam is distributed in the target area.Use the ion implanter of ion-beam scanning and the combination of target mobile phase to authorize in people's such as Berrian the U.S. Patent No. 4,922,106 open in May 1 nineteen ninety.
In many application, all be very important necessary condition to the conveying of semiconductor wafer with parallel ion beam.Parallel ion beam is the ion beam that has parallel ion trajectories on semiconductor wafer surface.In the situation of ion-beam scanning, require ion beam keeping parallelism on wafer surface of scanning.Parallel ion beam can prevent incident ion channel in the crystal structure of semiconductor wafer, perhaps makes channel even in needing the situation of channel.Usually, when needs ion beam height is parallel, use the continuous ionic injector.
In a method, ion beam is at one-dimensional scanning, and ion beam presents from a dispersion like this, is called scan source.Then ion beam is passed the ion optical element of implementing focusing.Ion optical element converts ion trajectory to parallel ion trajectories to be transported on the semiconductor wafer.Focus on available angle corrector magnet or implement with electrostatic lens.Angle corrector magnet can produce ion beam crooked and that focus on.Use electrostatic lens can obtain parallel ion beam, but energy contamination may be a shortcoming.
From the ion beam of angle corrector magnet or other concentrating elements output can be parallel, maybe can be concentrate on any or disperse, this depends on the parameter of ion beam and the parameter of concentrating element.When the use angle corrector magnet, the parallel of ion beam can be regulated by the magnetic field that changes angle corrector magnet.Angle corrector magnet generally has single magnetic field regulating action, and it changes parallel or angle of bend, or ion beam direction.Be appreciated that and think that ion implanter usually needs to be used for operating multiple different ionic species and ion energy.When ion beam parameters changes, need readjust angle corrector magnet to recover the parallel of ion beam.
In the ion implanter of prior art, the adjusting angle corrector magnet is so that ion beam can have vertical incidence on the wafer plane of ion implanter terminal position usually.Yet the regulating action that can obtain the angle corrector of vertical incidence on wafer plane may produce and not be optimized parallel.Specifically, the adjusting ion beam is understood the dispersion of some degree with the ion beam of vertical incidence on wafer plane or is concentrated.As shown in FIG. 8, the adjusting angle corrector magnet is so that the central ray of ion beam 200 is vertical and wafer plane 202.Yet when ion beam 200 was regulated vertical and wafer plane 202, the parallel of ion beam 200 can be demoted, and ion beam is concentrated in a bit or disperses like this.Some very in the important use parallel defective be unacceptable.
In another kind of method, under normal conditions, angle corrector magnet generally is designed to best parastate, and the ion implanter terminal position is positioned to the ion beam vertical incidence on wafer.But the parallel and vertical incidence of ion beam can not keep in the wide range of ion beam parameters, and the location of change terminal position is very difficult.
Therefore, existence is to the needs of the improved method and apparatus of the ion beam parallel of adjusting ion implanter.
According to first aspect of the present invention, provide a kind of method of in workpiece, injecting ion.Method comprises the step that produces ion, ion beam is adjusted to the step of required parallel degree, measure the step of the direction of the ion beam of regulating, determine the step of the direction of workpiece with reference to the direction of measuring ion beam with implant angle, and implement the step injected in order to the workpiece of implant angle orientation.
The step of regulating ion beam can comprise that it is parallel basically that ion beam is adjusted to ion trajectory.Generally, ion beam direction is different with the ion beam axis direction of ion implanter.Implant angle can be a zero degree, and wherein the direction with workpiece is decided to be vertical with the ion beam direction of being measured.
Workpiece can comprise semiconductor wafer, and the step of determining the workpiece direction can comprise with reference to the direction of the ion beam of being measured with the implant angle semiconductor wafer that tilts.
Method can further comprise the step of the angle of measuring not parallel ion beam.It is basic regulating the mensuration angle that the step of ion beam can not parallel ion beam.The direction of ion beam and the angle of not parallel ion beam can use moving iron beam forming device and one or more ion beam detector to measure.
According to another aspect of the present invention, provide the equipment that in workpiece, injects ion.Equipment comprises the device that produces ion, measure the parallel device of ion beam, ion beam is adjusted to the device of required parallel degree according to the parallel situation of being measured, measure the device of the direction of the ion beam of regulating, the direction of the ion beam that reference is measured is with the device of implant angle tilted workpiece, and the device of implementing injection with the workpiece that tilts with implant angle with reference to the ion beam direction of being measured.
According to another aspect of the present invention, provide the equipment that in workpiece, injects ion.Equipment comprises ion generator, be used for ion beam is adjusted to the ion optical element of required parallel degree, be used for measuring the mensuration system of the direction of the ion beam of regulating, and be used for reference to the inclination mechanical device of the ion beam direction of being measured with the implant angle tilted workpiece.Implement to inject with the workpiece that tilts with implant angle with reference to the ion beam direction of being measured.
Ion optical element can comprise that the ion trajectory that is used for ion beam is adjusted to substantially parallel angle corrector magnet.The mensuration system can comprise moving iron beam forming device and one or more ion beam detector.Wherein implant angle is a zero degree, tilts workpiece vertical with the ion beam direction of being measured.
In order to understand the present invention better, with reference to appended diagrammatic sketch, these diagrammatic sketch are with reference to this piece of writing of income, wherein:
Fig. 1 is the schematic diagram that is suitable for implementing ion implanter of the present invention.
Fig. 2 is the operation chart of demonstration angle corrector magnet in big relatively angle of bend and concentrated ion track situation.
Fig. 3 is the operation chart of demonstration angle corrector magnet in relatively little angle of bend and concentrated ion track situation.
Fig. 4 is a flow chart of regulating the process of ion implanter according to embodiment of the present invention.
Fig. 5 is the schematic diagram that is incident on the parallel ion beam on the wafer of inclination according to embodiment of the present invention.
Fig. 6 A-6C is the schematic diagram that the operation of ion beam parallel and ion beam direction is measured in demonstration.
Fig. 7 A-7C is respectively at the position of the ion beam situation intermediate ion beam forming device of Fig. 6 A-6C and the graph of a relation of ion beam detector output.
Fig. 8 is the schematic diagram that the prior art of ion beam parallel is regulated in demonstration.
The simple block diagram that is suitable for the example of concrete manifestation ion implanter of the present invention shows in Fig. 1.Ion beam generator 10 produces the ion beam of required kind, ion in the ion beam is accelerated to institute's energy requirement, to ion beam implementation quality/energy spectrometer to remove energy and mass defect thing, to provide the energy with low content and the ion beam that has energy 12 of mass defect thing.Scanning system 16, it comprises scanner 20 and angle corrector 24, ion beam 12 deflections is produced have parallel or near the ion beam 30 of parallel ion trajectories.Terminal position 32 is included in the range of ion beam 30 supporting semiconductor wafers 34 or other workpiece so that the platen 36 in the ion-implanted semiconductor wafer 34 of required kind.Ion implanter can comprise well-known other assemblies of technical staff in this field.For example, terminal position 32 generally also comprises the automatic chip processing device that wafer is introduced ion implanter and after injection wafer shifted out, dosimetry system, electrospray rifle or the like.Be appreciated that and think that whole ranges that ion beam passes vacuumized in ion injection period.
The primary clustering of ion beam generator 10 comprises ion beam source 40, source pass filter 42, acceleration post 44 and mass spectrometer 50.Source pass filter 42 is preferably near ion beam source 40 location.Acceleration post 44 is positioned between source pass filter 42 and the mass spectrometer 50.Mass spectrometer 50 comprise dipole analyzing magnet 52 and have differentiate hole 56 cover plate 54.
In the embodiment of Fig. 1, terminal position 32 comprises ion beam parallel and direction detection system 80.Parallel and the direction of ion beam is measured in system's 80 following descriptions.In addition, terminal position 32 also comprises inclination mechanical device 84, is used for according to the ion beam 30 wafer support platen 36 that tilts.In one embodiment, inclination mechanical device 84 can be according to two rectangular axis wafer support platen 36 that tilts.
The example of work angle adjuster 24 is demonstrated in Fig. 2 and Fig. 3.As shown in the figure, pole piece 26 wedge shapes of angle corrector 24 or setting similarly, different like this ion trajectories has different range length during by the gap between the pole piece.In Fig. 2, used high-intensity relatively magnetic field.Ion trajectory has big relatively angle of bend, can concentrate when they leave angle corrector 24.In the example of Fig. 3, used low intensive relatively magnetic field.Ion trajectory has relatively little angle of bend, can disperse when they leave angle corrector 24.Like this, in the example of Fig. 2, ion beam 30 is positive-angle 72 with the vertical line with respect to wafer plane 70 and is incident on the wafer plane 70, and in the example of Fig. 3, ion beam 30 is negative angle 74 with the vertical line with respect to wafer plane 70 and is incident on the wafer plane 70.Be appreciated that and think, produce parallel or approaching parallel ion trajectory by magnetic field in the suitable adjusting angle adjuster 24.Yet, provide best parallel magnetic field not necessarily to be created in the vertical incidence of ion beam 30 on the wafer 70 usually.
The flow chart of regulating the process of ion implanter and the injection of enforcement ion according to one embodiment of the invention shows at Fig. 4.In step 100, produce ion beam and also transmit by the ion beam line of ion implanter.As shown in FIG. 1, ion beam 12 has ion beam generator 12 to produce, and is sent to terminal position 32 by scanner 20 and angle corrector 24.
In step 102, the parallel of ion beam incided on the semiconductor wafer or measures on the plane on other workpiece or near this plane at ion beam.The example of measuring the technology of ion beam parallel is described below in conjunction with diagrammatic sketch 6A-6C and 7A-7C.The angle of parallel generally providing not-parallel ion beam is provided, particularly, the half-angle that provides ion beam to concentrate or disperse.Measure no-angle of parallel ion beam represents the peak excursion of ion beam trajectory apart from the intrafascicular heart ray of son.
In step 104, ion beam is adjusted to required parallel degree, usually diffusing or concentrated near zero.As shown in FIG. 5, the parallel of ion beam can change by the electric current that adjusting power supply 28 is applied on the magnetic coil.The electric current of regulating changes the magnetic field of angle corrector 24, and it has then changed the track of ion beam intermediate ion.When regulating power supply 28, implement regulating action by the parallel degree that monitors the ion beam of measuring 30.Best when parallel when obtaining, the adjustment process of step 104 stops.Usually, ion beam can be regulated in 0.1 degree dispersion or concentrated half-angle.
Provide best parallel magnetic field to be different from usually with the magnetic field of ion beam 30 orientations perpendicular to the wafer plane 70 of ion implanter terminal position.On the contrary, parallel ion beam 30 is incident on the wafer plane 70, as shown in Figure 5 with the angle 120 with respect to the vertical line of wafer plane 70.Be understandable that for the purpose of demonstrating, angle 120 has been exaggerated in Fig. 5.
In step 106, measure the direction of the ion beam of regulating.Particularly, measure the ion beam regulated angle 120 with respect to the vertical line of wafer plane 70.The example of measuring the technology of ion beam direction is described in conjunction with Fig. 6 A-6C and Fig. 7 A-7C below.In the plane of the scanning of ion beam and focusing, measure the direction of the parallel and ion beam of ion beam.
In step 108, the direction setting implant angle of the relative ion beam of regulating, specifically, with reference to angle 120.Use inclination mechanical device 84 to set implant angle with respect to the wafer plane 70 inclination wafer support platens 36 of injector.When needs during vertical incidence parallel sweep ion beam 30, tilt wafer support platen 36 and angle 120 angle same 122 on wafer 34.Like this, the wafer of platen 36 is vertical with parallel sweep ion beam 30.Needs non--situation of zero degree implant angle in, wafer support platen 36 is tilted with respect to the ion beam direction of being measured.The direction of the ion beam of measuring is used as the reference of setting incident angle like this.Non--zero degree implant angle can be by setting to be parallel to the scanning or the direction inclination wafer of focussing plane, or by setting with the direction inclination wafer that is orthogonal to scanning or focussing plane.In each case, non--zero degree implant angle all is to be reference with the ion beam direction of being measured.
In step 110, use wafer support platen, and use and be adjusted to best parallel ion beam 30 and implement to inject with required implant angle of determining with reference to the ion beam direction of being measured.Therefore, it is parallel to obtain the best at required implant angle.
With reference to figure 6A-6C and Fig. 7 A-7C the technical examples of measuring ion beam parallel and direction is described.Fig. 6 A-6C is that ion beam former and two schematic diagrames that the ion beam detector is measured different ions Shu Jinhang are used in demonstration.Fig. 7 A-7C is the diagrammatic sketch of the relation between the position of the output of demonstration ion beam detector and former.
As shown in Fig. 6 A-6C, use moving iron beam forming device 150 and interval ion beam detector 152 and 154 to measure ion beam parallel and directions, its corresponding ion beam parallel and direction detection system 80 (Fig. 1).Ion beam former 150 can be part blocks ions bundle and relative and the transversely movable any element of ion beam.For example, detector 152 and 154 can be the Faraday cup, and it can produce the electrical output signal corresponding to the incident ion bundle.When former 150 was crossing ion beam and moves, it had stopped the part ion bundle and has produced the ion beam shade.The ion beam shade crosses the output signal that detector 152 and 154 moved and produced negative sense output current impulse form.
As shown in Fig. 6 A, parallel sweep ion beam 160 vertical incidence are on wafer plane 170.As shown in Figure 7A, when the position of former 150 and each detector on time, detector 152 and 154 produces the output pulses.The position of former can be used for determining that ion beam 160 has parallel ion trajectories and vertical with wafer plane 70 when detector output pulse produced.
Referring to Figure 63, disperse ion beam 162 vertical incidence on wafer plane 170.In this case, shown in Fig. 7 B, when the right at detector 152, the position of former 150, detector 152 produces the output pulses, and when the left side at detector 154, the position of former 150, detector 154 produces the output pulses.The position of former can be used to determine the dispersion angle of ion beam 162 when detector output pulse produces.Corresponding to concentrated ion bundle (not shown), when the left side at detector 152, the position of former 150, detector 152 produces the output pulses, and when the right at detector 154, the position of former 150, detector 154 produces the output pulses.The position of former can be used to determine the concentrated angle of ion beam when detector output pulse produces.
As shown in Fig. 6 C, parallel ion beam 164 incides on the wafer plane 170 with angle 166.In this case, as shown in Fig. 7 C, when the position of former 150 respectively during the left side in detector 152 and 154, detector 152 and 154 produces the output pulses.The position of former can be used to determine that the direction of ion beam is with parallel when detector output pulse produces.
Usually, ion beam can be that disperse or concentrated, and can have with respect to wafer plane is the ion beam angle of zero degree.When detector output pulse produces, can analyze former to determine the parallel and direction of ion beam.Parallel can being expressed as disperseed or concentrated half-angle, and ion beam direction can be represented with respect to the vertical line of wafer plane 170.The U. S. application sequence number No.09/588 that submits on June 6th, 2000 about other detailed contents of the technology of measuring ion beam parallel and direction provides in 419, and application is with reference to this piece of writing of income.
Be appreciated that and think, measure the parallel and direction of ion beam within the scope of the invention and can use different technologies.In addition, the present invention is not subjected to using the restriction of ion beam.For example the present invention can use ribbon ion beam, as disclosed in the U.S. Patent No. 5,350,926 of awarding to people such as White on September 27th, 1994.
Though what this paper demonstrated and described is the preferred embodiment of the invention that consideration is at present thought, but the technical staff in this field be it is evident that, under the situation of the scope of the present invention that does not deviate from appended claims and limited, can make multiple change and correction to embodiment.
Claims (22)
1. method of injecting ion in workpiece comprises step:
Produce ion beam;
Ion beam is adjusted to required parallel degree;
Measure the ion beam direction of the ion beam of being regulated;
The ion beam direction that reference is measured is with the implant angle oriented workpiece;
Implement to inject in order to the workpiece of implant angle orientation.
2. method according to claim 1, the step of wherein regulating ion beam comprises
It is parallel basically that the ion trajectory of ion beam is adjusted to.
3. method according to claim 2, wherein ion beam direction difference and ion
The reference orientation of bundle angle.
4. method according to claim 1, wherein the step with the workpiece orientation comprises
With reference to the ion beam direction measured with the implant angle semiconductor wafer that tilts.
5. method according to claim 1, wherein implant angle is a zero degree, workpiece
Perpendicular to the ion beam direction orientation of being measured.
6. method according to claim 1 further comprises and measures not parallel ion
The bundle angle step, the step of wherein regulating ion beam be with not-parallel ion
The mensuration angle of bundle is the basis.
7. method according to claim 6, the wherein ion beam of not parallel ion beam
Direction and angle are to use moving iron beam forming device and one or more ion beam
Detector is measured.
8. method of injecting ion in workpiece comprises step:
Produce ion beam;
Measure the parallel of ion beam;
Arrive required parallel degree according to the parallel adjusting ion beam of measuring;
Measure the ion beam direction of the ion beam of being regulated;
The ion beam direction that reference is measured is with the implant angle tilted workpiece;
Use with reference to the ion beam direction of being measured to come with the workpiece that implant angle tilts
Implement to inject.
9. method according to claim 8, the step of wherein regulating ion beam comprise that it is parallel basically that the ion trajectory with ion beam is adjusted to.
10. method according to claim 8, wherein implant angle is a zero degree, workpiece tilts perpendicular to the ion beam direction of being measured.
11. method according to claim 8, the step of wherein measuring ion beam parallel comprise the step of the angle of measuring not parallel ion beam, the step of wherein regulating ion beam be based on not-the mensuration angle of parallel ion beam.
12. method according to claim 11, the wherein ion beam of not parallel ion beam
Direction and angle are to use moving iron beam forming device and one or more ion beam detector to measure.
13. method according to claim 8, wherein the step of tilted workpiece comprises the inclination semiconductor wafer.
14. an equipment that is used for injecting ion in workpiece comprises:
Produce the device of ion beam;
Measure the parallel device of ion beam;
According to the device of the parallel adjusting ion beam of measuring to required parallel degree;
Measure the device of the ion beam direction of the ion beam of being regulated;
With reference to the device of the ion beam direction of being measured with the implant angle tilted workpiece;
Use with reference to the ion beam direction of being measured to come with the workpiece that implant angle tilts
Implement the device of injection.
15. device according to claim 14, the device of wherein said adjusting ion beam comprise that it is parallel device basically that the ion trajectory with ion beam is adjusted to.
16. device according to claim 14, wherein implant angle is a zero degree, and workpiece tilts perpendicular to the ion beam direction of being measured.
17. device according to claim 14 is wherein measured the device of ion beam parallel and the device of mensuration ion beam direction and is comprised moving iron beam forming device and one or more ion beam detector.
18. device according to claim 14, wherein the device of tilted workpiece comprises the inclination mechanical device with respect to ion beam inclination semiconductor wafer.
19. an equipment that is used for injecting ion in workpiece comprises:
Ion beam generator;
Regulate the ion optical element of ion beam to required parallel degree;
Measure the mensuration system of the ion beam direction of the ion beam of being regulated; And
With reference to the inclination mechanical device of the ion beam direction of being measured, wherein with the implant angle tilted workpiece
Use with reference to the ion beam direction of being measured to come with the workpiece that implant angle tilts
Implement to inject.
20. device according to claim 19, wherein said ion optical element comprise that it is parallel angle corrector magnet basically that the ion trajectory with ion beam is adjusted to.
21. device according to claim 18, wherein said mensuration system comprises moving iron beam forming device and one or more ion beam detector.
22. device according to claim 18, wherein said inclination mechanical device make up and are used for semiconductor wafer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN02106603A CN1441465A (en) | 2002-02-28 | 2002-02-28 | Method and device for regulating ion beam parallel in ion injection device |
| CN201210287489.6A CN102915899B (en) | 2002-02-28 | 2002-02-28 | The method and apparatus that ion beam is parallel is regulated in ion implanter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN02106603A CN1441465A (en) | 2002-02-28 | 2002-02-28 | Method and device for regulating ion beam parallel in ion injection device |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210287489.6A Division CN102915899B (en) | 2002-02-28 | 2002-02-28 | The method and apparatus that ion beam is parallel is regulated in ion implanter |
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| CN1441465A true CN1441465A (en) | 2003-09-10 |
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| CN201210287489.6A Expired - Lifetime CN102915899B (en) | 2002-02-28 | 2002-02-28 | The method and apparatus that ion beam is parallel is regulated in ion implanter |
| CN02106603A Pending CN1441465A (en) | 2002-02-28 | 2002-02-28 | Method and device for regulating ion beam parallel in ion injection device |
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| CN201210287489.6A Expired - Lifetime CN102915899B (en) | 2002-02-28 | 2002-02-28 | The method and apparatus that ion beam is parallel is regulated in ion implanter |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102201321A (en) * | 2010-03-24 | 2011-09-28 | 上海凯世通半导体有限公司 | Ion implantation system and method |
| CN102376518A (en) * | 2010-08-17 | 2012-03-14 | 上海凯世通半导体有限公司 | Ion implantation system and methods |
| CN103943446A (en) * | 2012-01-20 | 2014-07-23 | 汉辰科技股份有限公司 | Scan head and scan arm using the same |
| CN104867803A (en) * | 2014-09-11 | 2015-08-26 | 中国电子科技集团公司第四十八研究所 | 30 degree parallel lens used for ion implanter |
| CN107154346A (en) * | 2017-05-19 | 2017-09-12 | 京东方科技集团股份有限公司 | A kind of doping method of film layer, thin film transistor (TFT) and preparation method thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6117136B2 (en) * | 2014-03-14 | 2017-04-19 | 住友重機械イオンテクノロジー株式会社 | Ion implantation apparatus, beam energy measuring apparatus, and beam energy measuring method |
| CN107221485B (en) * | 2017-06-02 | 2019-02-05 | 东莞帕萨电子装备有限公司 | A kind of ion beam current regulating device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5350926A (en) * | 1993-03-11 | 1994-09-27 | Diamond Semiconductor Group, Inc. | Compact high current broad beam ion implanter |
| US6255662B1 (en) * | 1998-10-27 | 2001-07-03 | Axcelis Technologies, Inc. | Rutherford backscattering detection for use in Ion implantation |
| GB2355336B (en) * | 1999-10-12 | 2004-04-14 | Applied Materials Inc | Ion implanter with wafer angle and faraday alignment checking |
-
2002
- 2002-02-28 CN CN201210287489.6A patent/CN102915899B/en not_active Expired - Lifetime
- 2002-02-28 CN CN02106603A patent/CN1441465A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102201321A (en) * | 2010-03-24 | 2011-09-28 | 上海凯世通半导体有限公司 | Ion implantation system and method |
| CN102201321B (en) * | 2010-03-24 | 2013-04-10 | 上海凯世通半导体有限公司 | Ion implantation system and method |
| CN102376518A (en) * | 2010-08-17 | 2012-03-14 | 上海凯世通半导体有限公司 | Ion implantation system and methods |
| CN102376518B (en) * | 2010-08-17 | 2014-07-09 | 上海凯世通半导体有限公司 | Ion implantation system and methods |
| CN103943446A (en) * | 2012-01-20 | 2014-07-23 | 汉辰科技股份有限公司 | Scan head and scan arm using the same |
| CN103943446B (en) * | 2012-01-20 | 2016-06-08 | 汉辰科技股份有限公司 | Probe and use the scan arm of this probe |
| CN104867803A (en) * | 2014-09-11 | 2015-08-26 | 中国电子科技集团公司第四十八研究所 | 30 degree parallel lens used for ion implanter |
| CN104867803B (en) * | 2014-09-11 | 2017-10-13 | 中国电子科技集团公司第四十八研究所 | A kind of 30 ° of parallel lens for ion implantation apparatus |
| CN107154346A (en) * | 2017-05-19 | 2017-09-12 | 京东方科技集团股份有限公司 | A kind of doping method of film layer, thin film transistor (TFT) and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102915899B (en) | 2016-03-16 |
| CN102915899A (en) | 2013-02-06 |
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