CN1432598A - High-dielectric composite material containing carbon nanotube and its prepn process - Google Patents
High-dielectric composite material containing carbon nanotube and its prepn process Download PDFInfo
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- CN1432598A CN1432598A CN 03104776 CN03104776A CN1432598A CN 1432598 A CN1432598 A CN 1432598A CN 03104776 CN03104776 CN 03104776 CN 03104776 A CN03104776 A CN 03104776A CN 1432598 A CN1432598 A CN 1432598A
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- carbon nanotube
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- barium titanate
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- polyvinylidene difluoride
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Abstract
The high-dielectric constant composite material contains carbon nanotube 2-12 vol%, BaTiO3 20 vol% and organic polyvinylidene fluoride 68-78 vol%. The preparation process is one hot pressing process with low forming temperature and short period. The composite material has high dielectric constant over 450, simple preparation process and high toughness. Through regulating the content of additive components and different physical and chemical treatment, the dielectric constant and toughness may be altered obviously. It has wide application foreground.
Description
Technical field
The present invention relates to a kind of high-k matrix material that contains carbon nanotube and preparation method thereof.Belong to the high dielectric material technical field.
Background technology
The application of high-dielectric composite material aspect electronics and electric power project engineering is very extensive.Element pasted on surface (SMC) or overall package technology be realize that complete electronic set is small-sized, the gordian technique of light weight and slimming: embedded capacitor is adopted in the overall package technical requirements, and this capacitor dielectric material must have high specific inductivity.At present, used surface mount capacitor all is multilayer ceramic dielectric capacitor (MLCC) basically, although the inorganic ceramic capacitor material has high specific inductivity, but ceramic condenser needs at high temperature to burn altogether with electrode, complex process, and power consumption is big, snappiness is poor, be easy to cracking, again because the most of organism that adopts of the circuit substrate of embedded capacitor, this has determined ceramic condenser to be difficult in the substrate to use as embedded capacitor.Therefore not that chip organic multilayer film capacitor can address this problem under the very high situation in that condenser capactiance is required.Especially adopt rhythmo structure to help reducing inductance value and loss, improve high frequency characteristics, further reduced volume improves electrical capacity and precision.
Several years of past, people are devoted to study ceramic powder polymer-based carbon (0-3) matrix material, however because the specific inductivity all lower (being generally less than 10) of organic polymer self just reaches 60 when room temperature.For example, people such as Kuo of Taiwan Donghua University is with barium titanate (BaTiO
3) join in the epoxy, the specific inductivity of matrix material is about 50.Recently, people such as the Bai of University of Pennsylvania and Zhang add the PMN-PT ceramic powder in P (VDF-TrFE) multipolymer to by solution method, in the volume fraction of pottery is that the specific inductivity of 50% o'clock matrix material is about 200, and high-load ceramic composition like this adds reduces the toughness of matrix material greatly.Pei Qinuoman people such as (Pecharroman) has prepared nickel (Ni)/barium titanate (BaTiO
3) ceramic-metal composite, the specific inductivity of this material reaches 80000, but this matrix material need carry out high temperature co-firing at 1300 ℃, needs simultaneously with special protective atmosphere to prevent the oxidation of metal Ni.Above statement of facts: (1) ferroelectric component directly and during organic constituent, although material has certain snappiness, the specific inductivity of matrix material is always very low.(2) utilize the diafiltration effect that conductive component is added ferroelectric phase, can improve the specific inductivity of matrix material greatly, but need high temperature co-firing, the toughness that material shortage is enough.
Nickel/titanium that the present inventor studied in the past acid barium/polyvinylidene difluoride (PVDF) three-phase composite material, this material has high specific inductivity, but its snappiness is not high, can be restricted as the good dielectric material use of electrical condenser.
Summary of the invention
The high-dielectric composite material that contains carbon nanotube that the purpose of this invention is to provide a kind of high-k, high-flexibility.
For achieving the above object, a kind of high-k that the present invention proposes, the high-dielectric composite material that contains carbon nanotube of high-flexibility, it is characterized in that: described matrix material contains following component, carbon nanotube CNT and barium titanate BaTiO
3, organic materials polyvinylidene difluoride (PVDF) PVDF, its prescription is by volume: carbon nanotube 2～12%, barium titanate 20% and polyvinylidene difluoride (PVDF) 68～78%.
In above-mentioned matrix material, described carbon nanotube external diameter is 5～60nm, and length is 1～3m; The granularity of described barium titanate is 0.1～0.5m; The granularity and the barium titanate of described polyvinylidene difluoride (PVDF) are suitable.
Another object of the present invention provides that a kind of hot pressing temperature is low, technology is simple, non-environmental-pollution, the energy-conservation preparation method who contains the high-dielectric composite material of carbon nanotube.
A kind of preparation method who contains the high-dielectric composite material of carbon nanotube that the present invention proposes is characterized in that: this method adopts the compression moulding of low temperature and pressure method, and its preparation process is:
(1) batching: get 0.019～0.140 gram carbon nanotube that external diameter is 5～60nm, 0.585 gram barium titanate and 0.5～0.7 gram polyvinylidene difluoride (PVDF) powder that granularity is 0.1～0.5m by above-mentioned prescription;
(2) join sample: carbon nanotube, barium titanate and polyvinylidene difluoride (PVDF) powder are mixed according to the above ratio, stir;
(3) moulding: the powder that mixes is placed on the tabletting machine, is 200 ± 10 ℃ in temperature, and pressure is 12 ± 2MPa, and the time is that 20 ± 2min is hot-forming, obtains required ternary (CNT/BaTiO
3/ PVDF) high-k matrix material.
The present invention is by the high-k matrix material that contains carbon nanotube of hot pressing preparation, have high DIELECTRIC CONSTANT=more than 450, and preparation technology is simple, and toughness of material is good, is a kind of novel high-k matrix material.Preparation method of the present invention adopts pressure sintering to reduce mold temperature, shortens preparation time, and the matrix material of stable in the short period of time performance, good toughness, thereby has saved the time and the energy.In addition, the relative content by regulate adding component with component is carried out different physical chemistry and handles, can change the specific inductivity and the snappiness of this material significantly, make it to reach optimum.
Description of drawings
Fig. 1 is the curve of content of carbon nanotubes to DIELECTRIC CONSTANT and dielectric loss influence.
Fig. 2 (a) be under different content of carbon nanotubes DIELECTRIC CONSTANT with the experiment frequency variation.
Fig. 2 (b) be under different content of carbon nanotubes the conductivity with the experiment frequency variation.
Fig. 3 (a) be under different content of carbon nanotubes DIELECTRIC CONSTANT with the variation of working temperature.
Fig. 3 (b) be under different content of carbon nanotubes dielectric loss tan δ with the variation of working temperature.
Fig. 4 is the microphotograph of the used carbon nanotube of experiment.
Fig. 5 is the section microphotograph that contains the composite sample of carbon nanotube.
Embodiment
The present invention is novel high-k matrix material that contains carbon nanotube and preparation method thereof, and the matrix material of this high-k comprises carbon nanotube CNT and barium titanate BaTiO
3, component such as organic materials polyvinylidene difluoride (PVDF) PVDF, its prescription is by volume: carbon nanotube 2～12%, the powder uniform mixing of barium titanate 20% and polyvinylidene difluoride (PVDF) 68～78%.Its preparation process is:
1) batching: get 0.019～0.140 gram carbon nanotube that external diameter is 5～60nm, 0.585 gram barium titanate and 0.5～0.7 gram polyvinylidene difluoride (PVDF) powder that granularity is 0.1～0.5m by above-mentioned prescription.
2) join sample: carbon nanotube, barium titanate and polyvinylidene difluoride (PVDF) powder are mixed according to the above ratio, stir.
3) moulding: the powder that mixes is placed on the tabletting machine, is 20 ± 10 ℃ in temperature, and pressure is 12 ± 2MPa, the time be 20 ± 2 minutes hot-forming, obtain required having specific inductivity up to more than 450, flexible good ternary (CNT/BaTiO
3/ PVDF) matrix material is expected to be used to make high performance small volume chip organic multilayer film capacitor.
Following embodiment is further specified:
Embodiment 1 A1-A5
With different CNT according to A1-A5 proportioning and 20vol.% in the table 1,0.5852 the gram BaTiO
3Three's thorough mixing is even, (pressure is 10MPa in 200 ℃ of hot pressing on thermocompressor, time is 20min) moulding, can make a series of samples, through recording dielectric characteristics and the rational curve of dielectric loss and specific inductivity (a) and the specific conductivity (b) and the relation curve of testing frequency of Fig. 2 as shown in Figure 1.
Embodiment 2 A1-A5
The dielectric characteristics that the sample that makes among the embodiment 1 is changed with experimental temperature is shown in legend 3.The SEM of primary carbon nanotube as shown in Figure 4.The composite sample section SEM pattern that contains carbon nanotube as shown in Figure 5.
Table 1 component prescription
PVDF CNT
Label
Vol.％ g Vol.％ g
A1 78 0.6982 2 0.0191
A2 75 0.6711 5 0.0473
A3 72 0.6443 8 0.0752
A4 70 0.6274 10 0.0945
A5 68 0.6093 12 0.1121 explanations: all contain 20vol.%BaTiO in each matrix material
3, quality is 0.5852g.
Claims (3)
1, a kind of high-dielectric composite material that contains carbon nanotube, it is characterized in that: described matrix material contains following component, carbon nanotube CNT and barium titanate BaTiO
3, organic materials polyvinylidene difluoride (PVDF) PVDF, its prescription is by volume: carbon nanotube 2～12%, barium titanate 20% and polyvinylidene difluoride (PVDF) 68～78%.
2, according to the described high-dielectric composite material that contains carbon nanotube of claim 1, it is characterized in that: described carbon nanotube external diameter is 5～60nm, and length is 1～3 μ m; The granularity of described barium titanate is 0.1～0.5 μ m; The granularity and the barium titanate of described polyvinylidene difluoride (PVDF) are suitable.
3, a kind ofly prepare the method that contains the high-dielectric composite material of carbon nanotube as claimed in claim 1, it is characterized in that: this method adopts the compression moulding of low temperature and pressure method, and its preparation process is:
(1) batching: get 0.019～0.112 gram carbon nanotube that external diameter is 5～60nm, 0.585 gram barium titanate and 0.609～0.698 gram polyvinylidene difluoride (PVDF) powder that granularity is 0.1～0.5 μ m by above-mentioned prescription;
(2) join sample: carbon nanotube, barium titanate and polyvinylidene difluoride (PVDF) powder are mixed according to the above ratio, stir;
(3) moulding: the powder that mixes is placed on the tabletting machine, is 200 ± 10 ℃ in temperature, and pressure is 12 ± 2MPa, and the time is that 20 ± 2min is hot-forming, obtains required ternary (CNT/BaTiO
3/ PVDF) high-k matrix material.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1326807C (en) * | 2004-04-02 | 2007-07-18 | 河南大学 | Method for preparing nano tube titanic acid embedding transition metal and its oxide |
| CN101475161B (en) * | 2009-01-13 | 2011-04-27 | 东华大学 | Method for preparing BaTiO3 / multi-wall carbon nano-tube (MWCNTs) nano composite material |
| US7998369B2 (en) | 2001-07-11 | 2011-08-16 | Hyperion Catalysis International, Inc. | Polyvinylidene fluoride composites and methods for preparing same |
| CN102174236A (en) * | 2011-03-16 | 2011-09-07 | 哈尔滨师范大学 | Preparation method of polyvinylidene fluoride-based composite with high dielectric constant |
| CN102190840A (en) * | 2010-03-12 | 2011-09-21 | 北京化工大学 | Preparation of micro/nano co-filled high-dielectric-constant flexible composite film |
| CN102268165A (en) * | 2011-07-04 | 2011-12-07 | 海南大学 | Preparation method of carbon nano tube/polymer conductive composite material |
| CN102651279A (en) * | 2012-05-17 | 2012-08-29 | 北京科技大学 | Preparation method of high-energy storage polymer nanotube capacitor array |
| CN102675779A (en) * | 2012-05-10 | 2012-09-19 | 北京科技大学 | High-dielectric-constant three-phase composite material containing modified graphene and preparation method thereof |
| CN103131211A (en) * | 2013-01-23 | 2013-06-05 | 苏州大学 | Carbon nano tube-lithium titanium doped nickel oxide compound and preparation method thereof |
| CN104530616A (en) * | 2015-01-05 | 2015-04-22 | 内蒙古科技大学 | High dielectric property and low loss sheet-shaped barium titanate base/ polymer composite material and preparation method thereof |
| CN111208720A (en) * | 2018-11-21 | 2020-05-29 | 柯尼卡美能达株式会社 | Intermediate transfer body and image forming apparatus |
| CN114957993A (en) * | 2022-06-02 | 2022-08-30 | 宁夏清研高分子新材料有限公司 | High-dielectric polyarylethersulfone material and preparation method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CA2453424C (en) * | 2001-07-11 | 2011-01-04 | Hyperion Catalysis International, Inc. | Polyvinylidene fluoride composites and methods for preparing same |
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2003
- 2003-02-28 CN CNB031047769A patent/CN1189512C/en not_active Expired - Fee Related
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7998369B2 (en) | 2001-07-11 | 2011-08-16 | Hyperion Catalysis International, Inc. | Polyvinylidene fluoride composites and methods for preparing same |
| CN1326807C (en) * | 2004-04-02 | 2007-07-18 | 河南大学 | Method for preparing nano tube titanic acid embedding transition metal and its oxide |
| CN101475161B (en) * | 2009-01-13 | 2011-04-27 | 东华大学 | Method for preparing BaTiO3 / multi-wall carbon nano-tube (MWCNTs) nano composite material |
| CN102190840B (en) * | 2010-03-12 | 2013-04-10 | 北京化工大学 | Preparation of micro/nano co-filled high-dielectric-constant flexible composite film |
| CN102190840A (en) * | 2010-03-12 | 2011-09-21 | 北京化工大学 | Preparation of micro/nano co-filled high-dielectric-constant flexible composite film |
| CN102174236B (en) * | 2011-03-16 | 2012-09-19 | 哈尔滨师范大学 | Preparation method of polyvinylidene fluoride-based composite with high dielectric constant |
| CN102174236A (en) * | 2011-03-16 | 2011-09-07 | 哈尔滨师范大学 | Preparation method of polyvinylidene fluoride-based composite with high dielectric constant |
| CN102268165A (en) * | 2011-07-04 | 2011-12-07 | 海南大学 | Preparation method of carbon nano tube/polymer conductive composite material |
| CN102675779A (en) * | 2012-05-10 | 2012-09-19 | 北京科技大学 | High-dielectric-constant three-phase composite material containing modified graphene and preparation method thereof |
| CN102675779B (en) * | 2012-05-10 | 2014-08-13 | 北京科技大学 | High-dielectric-constant three-phase composite material containing modified graphene and preparation method thereof |
| CN102651279A (en) * | 2012-05-17 | 2012-08-29 | 北京科技大学 | Preparation method of high-energy storage polymer nanotube capacitor array |
| CN102651279B (en) * | 2012-05-17 | 2013-11-06 | 北京科技大学 | Preparation method of high-energy storage polymer nanotube capacitor array |
| CN103131211A (en) * | 2013-01-23 | 2013-06-05 | 苏州大学 | Carbon nano tube-lithium titanium doped nickel oxide compound and preparation method thereof |
| CN103131211B (en) * | 2013-01-23 | 2014-05-14 | 苏州大学 | Carbon nano tube-lithium titanium doped nickel oxide compound and preparation method thereof |
| CN104530616A (en) * | 2015-01-05 | 2015-04-22 | 内蒙古科技大学 | High dielectric property and low loss sheet-shaped barium titanate base/ polymer composite material and preparation method thereof |
| CN111208720A (en) * | 2018-11-21 | 2020-05-29 | 柯尼卡美能达株式会社 | Intermediate transfer body and image forming apparatus |
| CN114957993A (en) * | 2022-06-02 | 2022-08-30 | 宁夏清研高分子新材料有限公司 | High-dielectric polyarylethersulfone material and preparation method thereof |
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