CN1427452A - Method of forming patterned photoresist - Google Patents
Method of forming patterned photoresist Download PDFInfo
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- CN1427452A CN1427452A CN 01144451 CN01144451A CN1427452A CN 1427452 A CN1427452 A CN 1427452A CN 01144451 CN01144451 CN 01144451 CN 01144451 A CN01144451 A CN 01144451A CN 1427452 A CN1427452 A CN 1427452A
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- photoresistance
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Abstract
A process for preparing the patterned photoresist includes such steps as generating the first photoresist layer on substrate for generating channel in substrate, generating the second photoresist layer on the first one for generating line pattern in substrate, exposing and developing to obtain pattern. Its advantages are no generation of foot after exposing, and complete pattern boundary.
Description
Technical field
The present invention relates to the method that a kind of semiconductor is made, and particularly about a kind of method of patterning photoresist layer.
Background technology
In the manufacture process of integrated circuit, the ring of photoetching process for quite being much accounted of is because of it involves the transfer of line pattern, so relate to the reliability of follow-up manufacturing.In present photoetching technique, optical lithography techniques is a mainstream technology.Because of its mode for the light that light source sent is incident upon on the photoresistance via mask, with the design transfer of mask to photoresistance, this kind mode can make production capacity promote, so have the advantage on the cost.
The main flow of present optical lithography techniques is for using the exposure technique of 248nm (using the KrF exposure machine) and 193nm (using the ArF exposure machine) light source, its applicable technology be respectively the manufacture method of 0.25-0.15 micron and 0.18-0.13 micron.
With the KrF photoresistance, its photoresistance composition can reduce following five kinds, comprises polymer (polymer), light acid producing agent (photo-acid generator; PAG), sour agent for capturing (acidquencher), additive (additive) and solvent etc.Its reaction mechanism is that the light acid producing agent produces light acid (being acid ion) and comes catalytic polymer to remove the chemical reaction of protecting group (deprotection) behind irradiation, to increase the solubility of polymer in developer solution.And the sour agent for capturing in the KrF photoresistance can be adjusted the diffusion property of photoresistance photolytically acid, and additive then can promote the tolerance of photoresistance top layer to environment neutral and alkali material, solvent then as medium (matrix) so that above-mentioned reaction can be carried out smoothly.
For the ArF photoresistance, mainly be that aromatic ring (aromatic ring) structure with the polymer in the KrF photoresistance composition makes the structure of alicyclic (alicyclic) into, can make the 193nm light wave penetrate into the photoresistance bottom on the one hand, can increase the anti-etching power of photoresistance on the one hand.And other composition such as light acid producing agent, neutral additive and alkalinity additive etc. also need to cooperate the chemical constitution of the polymer of ArF photoresistance to be adjusted.Light acid producing agent as ArF need possess high efficiency electron transfer capacity; and neutral additive can change dissolution characteristics, optical effect, thermal property and the surface nature of photoresistance, can have influence on as for alkalinity additive photoresistance environmental stability, acid ion extension, contrast effect and go reaction rate of protecting group etc.
In general, commercially available photoresistance kind can have difference because the characteristic of the pattern of required transfer is different.For example will be used for shifting the photoresistance of irrigation canals and ditches pattern, it requires to want fast for the diffusion rate of light acid, and the contrast ability (contrast) of photoresistance is low.And for the photoresistance that will be used for shifting single line pattern (iso-line), it requires to want slow for the diffusion rate of light acid, and it is high that the contrast ability of photoresistance is wanted.But if the pattern that will shift, when the pattern density difference of its zones of different is big, need be suitable for shifting the photoresistance characteristic of single line pattern in the low part of figure density, and need be suitable for shifting the photoresistance characteristic of irrigation canals and ditches pattern, cause an awkward situation in the big part of pattern density.Especially in the manufacture process of deep-sub-micrometer, the difficulty on this kind photoetching process needs to be resolved hurrily.
Summary of the invention
In order to overcome the deficiencies in the prior art, the purpose of this invention is to provide a kind of formation method of patterning photoresistance, so that not having foot, the photoresistance of the light that exposed to the sun bottom do not form the complete external form (profile) that (footing formation) can keep pattern again.
Another object of the present invention provides a kind of formation method of patterning photoresistance, in order to forming the photoresistance that has close line (dense line) and single line (iso-line) pattern simultaneously.
Another purpose of the present invention provides a kind of formation method of patterning photoresistance, with the process margin (process window) that significantly increases photoetching process.
According to above-mentioned purpose of the present invention, the invention provides a kind of formation method of patterning photoresistance, this method comprises at least: form one first photoresistance in a substrate, this first photoresistance is applicable in this substrate and forms irrigation canals and ditches; Form one second photoresistance on this first photoresistance, this second photoresistance is applicable to and forms the line style pattern in this substrate that the thickness of this second photoresistance is greater than the thickness of this first photoresistance; And this first photoresistance and this second photoresistance carried out an exposure imaging step to form a patterning photoresistance.
In other words, the formation method of patterning photoresistance of the present invention.At first, form first photoresistance in substrate, this first photoresistance is applicable to and forms irrigation canals and ditches in the substrate.Then form second photoresistance on first photoresistance, second photoresistance is applicable to and forms the line style pattern in the substrate.Then first photoresistance and second photoresistance are carried out the exposure imaging step to form the patterning photoresistance.
The diffusion rate of the light acid that the diffusion rate of the light acid that the first above-mentioned photoresistance is produced in the exposure imaging step is produced in the exposure imaging step greater than second photoresistance.And the contrast ability of first photoresistance in the exposure imaging step is less than the contrast ability of second photoresistance in the exposure imaging step.
So, the thickness of first photoresistance does not need too thick, forms as long as be enough to allow its bottom not have foot.And the thickness of second photoresistance mainly is to decide with desiring etched depth according to the etching selectivity of the material of second photoresistance and substrate, and just the thickness of second photoresistance is enough to get final product as the etching mask of subsequent.
According to above-mentioned because the first photoresistance position below, and the second photoresistance position is thereon, and the light of first photoresistance acid diffusion rate is big and the contrast ability is less.The back produces foot so can avoid exposing, and the pattern external form that can be kept perfectly, and natural energy makes the process margin of photoetching increase many.
Description of drawings
For above and other objects of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail below:
Fig. 1-2 is the formation method flow profile according to a kind of patterning photoresistance of a preferred embodiment of the present invention.
Symbol description among the figure:
100 substrates
110,130a, 140a first photoresistance
120,130b, 140b second photoresistance
130 single line patterns
140 close line patterns
140c, 150 openings
Embodiment
Will be used for shifting the photoresistance of irrigation canals and ditches pattern as mentioned above, it requires to want fast for the diffusion rate of light acid, and the contrast ability of photoresistance is low.And for the photoresistance that will be used for shifting the single line pattern, it requires to want slow for the diffusion rate of light acid, and it is high that the contrast ability of photoresistance is wanted.
This is because will shift irrigation canals and ditches pattern (exposure place) to photoresistance the time, the diffusion rate of light acid is fast and contrast ability photoresistance is low, the bottom of photoresistance just is exposed easily and light acid more easily diffuses to the bottom of photoresistance, make it after development, can not have photoresistance residual in the bottom of exposure place, generate foot (footing) structure.And to shift the single line pattern to photoresistance the time, slow and the contrast ability height of the diffusion rate of light acid, the top of single line pattern (unexposed place) just is difficult for being exposed and is difficult for having a large amount of light acid diffusions to come in, and causes loss of top (top loss) to form the structure of dome (rounding corner) after development.
Please refer to Fig. 1-2, it illustrates the formation method flow profile according to a kind of patterning photoresistance of a preferred embodiment of the present invention.In Fig. 1, form first photoresistance 110 earlier in substrate 100, and then form second photoresistance 120 on first photoresistance 110.The formation method of first photoresistance 110 and second photoresistance 120 for example can be method of spin coating.Wherein the characteristic of first photoresistance 110 is that light acid diffusion rate is fast and the contrast ability is low, and the characteristic of second photoresistance 120 is the slow and contrast ability height of light acid diffusion rate.
In Fig. 2, carry out the step of exposure imaging, in substrate 100, form the photoresistance of patterning, the photoresistance of this patterning has single line pattern 130 and close line pattern 140.At single line pattern 130 places, because of the characteristic of the second photoresistance 130b on its upper strata is the slow and contrast ability height of light acid diffusion rate, so do not have the generation of dome phenomenon.And be positioned at the first photoresistance 130a of lower floor, and because of its characteristic is that light acid diffusion rate is fast low with the contrast ability, the formation foot structure so be easy to make its contained polymer reaction to have any remaining photoresistance (scum) fully and not.In like manner, same effect is also arranged at close line pattern 140 places.Even therefore not of uniform size at the photoresistance pattern density of zones of different, the photoresistance pattern that also can obtain having good external form.
Thickness as for first photoresistance must enough approach, and so just can guarantee not have foot and form.For example the thickness of first photoresistance is about 1-300nm, the preferable 100nm that is about, and the preferable thickness that is less than second photoresistance of its thickness.And the thickness of second photoresistance must be enough to bear the erosion of subsequent, so its thickness must decide according to etching selectivity and desire etched depth.For example the thickness of second photoresistance is about 100-800nm, the preferable 200nm that is about.The gross thickness of other first photoresistance and second photoresistance is preferably below 1000nm, when exposing, can make light arrive the bottom of first photoresistance.
By the invention described above preferred embodiment as can be known, use the present invention and have the advantage that can obtain good external form photoresistance pattern.This is to coat on the substrate earlier because will have light acid diffusion rate first the photoresistance big and characteristic that the contrast ability is little, to have light acid diffusion rate second the photoresistance little and characteristic that the contrast ability is big again is coated with thereon, so both can avoid the photoresistance bottom of exposure place after development, to form foot structure, can avoid the photoresistance top at unexposed place after development, to have dome structure again.
Though the present invention discloses as above with a preferred embodiment; right its is not in order to limit the present invention; any those skilled in the art; without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, thus protection scope of the present invention when with claims and in conjunction with specification and accompanying drawing the person of being defined be as the criterion.
Claims (10)
1. the formation method of a patterning photoresistance, this method comprises at least:
Form one first photoresistance in a substrate, this first photoresistance is applicable in this substrate and forms irrigation canals and ditches;
Form one second photoresistance on this first photoresistance, this second photoresistance is applicable to and forms the line style pattern in this substrate that the thickness of this second photoresistance is greater than the thickness of this first photoresistance; And
This first photoresistance and this second photoresistance are carried out an exposure imaging step to form a patterning photoresistance.
2. the formation method of patterning photoresistance according to claim 1 is characterized in that: the diffusion rate of the light acid that the diffusion rate of the light acid that this first photoresistance is produced in this exposure imaging step is produced in this exposure imaging step greater than this second photoresistance.
3. the formation method of patterning photoresistance according to claim 1 is characterized in that: the contrast ability of this first photoresistance in this exposure imaging step is less than the contrast ability of this second photoresistance in this exposure imaging step.
4. the formation method of patterning photoresistance according to claim 1 is characterized in that: the thickness of this first photoresistance is enough to allow its bottom not have foot formation.
5. the formation method of patterning photoresistance according to claim 1 is characterized in that: the thickness of this second photoresistance is decided with desiring etched depth according to the etching selectivity of the material of this second photoresistance and this substrate.
6. the formation method of patterning photoresistance according to claim 1 is characterized in that: the thickness of this second photoresistance is enough to the etching mask as subsequent.
7. the formation method of a patterning photoresistance, this method comprises at least:
Form one first photoresistance in a substrate;
Form one second photoresistance on this first photoresistance, the thickness of this second photoresistance is greater than the thickness of this first photoresistance;
This first photoresistance and this second photoresistance are carried out a step of exposure, the diffusion rate of the light acid that the diffusion rate of the light acid that this first photoresistance produces produces greater than this second photoresistance in this step of exposure in this step of exposure; And
This first photoresistance and this second photoresistance are carried out a development step, to form a patterning photoresistance.
8. the formation method of patterning photoresistance according to claim 7 is characterized in that: the thickness of this first photoresistance is enough to allow its bottom not have foot formation.
9. the formation method of patterning photoresistance according to claim 7 is characterized in that: the thickness of this second photoresistance is decided with desiring etched depth according to the etching selectivity of the material of this second photoresistance and this substrate.
10. the formation method of patterning photoresistance according to claim 7 is characterized in that: the thickness of this second photoresistance is enough to the etching mask as subsequent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011444517A CN1185688C (en) | 2001-12-18 | 2001-12-18 | Method of forming patterned photoresist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011444517A CN1185688C (en) | 2001-12-18 | 2001-12-18 | Method of forming patterned photoresist |
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| Publication Number | Publication Date |
|---|---|
| CN1427452A true CN1427452A (en) | 2003-07-02 |
| CN1185688C CN1185688C (en) | 2005-01-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011444517A Expired - Fee Related CN1185688C (en) | 2001-12-18 | 2001-12-18 | Method of forming patterned photoresist |
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| Country | Link |
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| CN (1) | CN1185688C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102608860A (en) * | 2012-03-26 | 2012-07-25 | 深圳市华星光电技术有限公司 | Photoetching method, photomask combination and exposure system |
| CN108074812A (en) * | 2016-11-08 | 2018-05-25 | 中芯国际集成电路制造(上海)有限公司 | The manufacturing method of fin field effect pipe |
-
2001
- 2001-12-18 CN CNB011444517A patent/CN1185688C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102608860A (en) * | 2012-03-26 | 2012-07-25 | 深圳市华星光电技术有限公司 | Photoetching method, photomask combination and exposure system |
| CN102608860B (en) * | 2012-03-26 | 2016-02-03 | 深圳市华星光电技术有限公司 | Lithographic methods, reticle combination and exposure system |
| CN108074812A (en) * | 2016-11-08 | 2018-05-25 | 中芯国际集成电路制造(上海)有限公司 | The manufacturing method of fin field effect pipe |
| CN108074812B (en) * | 2016-11-08 | 2020-07-10 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing fin field effect transistor |
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| Publication number | Publication date |
|---|---|
| CN1185688C (en) | 2005-01-19 |
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