CN1423147A - Projection optical system and exposure device with same - Google Patents

Abstract

Obtaining a high resolution projection optical system which secures high image side numerical aperture while suppressing the increase of a lens outer diameter. This projection optical system has an image side numerical aperture of >=0.75 and forms the image of a first object (3) on a second object by using specified light having a wavelength of <=300 nm. A first lens group G1 having positive refracting power, a second lens group G2 having negative refracting power, a third lens group G3 having positive refracting power and a fourth lens group G4 having positive refracting power are provided in this order from the side of the first object. The distance D (mm) along an optical axis between the optical surface of the fourth lens group G4 which is on the closest side to the second object and the second object satisfies a condition of 0.1<D<5.

Description

Projection optical system and exposure device with this projection optical system

Technical field

The present invention relates to a kind of projection optical system and exposure device, the projection optical system of employed exposure device when particularly being adapted to pass through most photoetching process and making semiconductor element and liquid crystal display cells etc. with this projection optical system.

Background technology

Be used for making the photoetching process of semiconductor element etc., using by projection optical system and the pattern image of mask is projected in the exposure device that carries out projection exposure on the photonasty substrate as wafer etc.In this exposure device,, projection optical system resolution (resolution) is required to improve along with integrated levels such as semiconductor element improve.Therefore,, force the wavelength that must shorten illumination light (exposure light), simultaneously the limit is brought up in the picture number formulary value aperture (NA) of projection optical system in order to satisfy requirement to projection optical system resolution.

, if the numerical aperture of projection optical system increases, the increase that is in proportion of lens external diameter and numerical aperture.As a result, the external diameter (glass material bore) that is used to make the optical material blank of lens increases, and obtains good homogeneous optical material blank so that manufacturing property good optical system all is difficult.And, if the lens external diameter increases, be subjected to easily because gravity to the amount of deflection of lens and the influence of distortion, is difficult to manufacturing property good optical system.

The present invention proposes at the problems referred to above, and purpose is to provide a kind of high-resolution projection optical system and the exposure device with this projection optical system, can suppress the lens external diameter and become big, guarantees that simultaneously picture number formulary value aperture is big.And purpose also is to provide a kind of manufacture method of microdevice, utilizes the exposure device of the high-resolution projection optical system with big picture number formulary value of the present invention aperture, can be with the good microdevice of high precision manufacturing.

Summary of the invention

In order to address the above problem, the invention provides a kind of projection optical system, it is more than 0.75 as number formulary value aperture, utilize wavelength for below the 300nm decide light the picture of first object be formed on second object.

Have the first lens combination G1, the second lens combination G2 of negative power, the 3rd lens combination G3 of positive light coke and the 4th lens combination G4 of positive light coke of positive light coke in turn from first object, one side, it is characterized in that:

Distance D (mm) along optical axis between the optical surface of the most close second object, one side of above-mentioned the 4th lens combination G4 and above-mentioned second object satisfies following condition:

0.1＜D＜5 (1)

And according to most preferred embodiment of the present invention, the picture number formulary value aperture of above-mentioned optical system is more than 0.8.And, each optical element that constitutes above-mentioned the 4th lens combination G4 is along the thickness of optical axis and be T, when the distance of optical axis is D (mm), preferably satisfy following condition between the optical surface of the most close second object of above-mentioned the 4th lens combination G4 one side and above-mentioned second object:

0.001＜D/T＜0.2 (2)

According to most preferred embodiment of the present invention, each optical element that constitutes above-mentioned the 4th lens combination G4 is along the thickness of optical axis and be T, when the distance of optical axis is L, satisfies following condition between above-mentioned first object and second object:

0.02＜L/T (3)

The present invention also provides a kind of exposure device, it is characterized in that: have the illuminator that is used to throw light on as the mask of above-mentioned first object, the picture of the pattern that forms on the above-mentioned mask is formed on as the projection optical system of the present invention on the photonasty substrate of above-mentioned second object, stops the gas that produces on the above-mentioned photonasty substrate attached to the anti-locking apparatus that adheres on the optical surface of the most close second object, one side of above-mentioned the 4th lens combination G4.In this case, preferably above-mentionedly adhere to anti-locking apparatus and have on the optical surface of the most close second object, one side of above-mentioned the 4th lens combination G4 and the light path between the above-mentioned photonasty substrate and form the stream formation device that institute decides gas or flow of liquid.

And, the present invention also provides a kind of exposure method, comprise the illumination step of illumination as the mask of above-mentioned first object, by projection optical system of the present invention, the pattern exposure that forms on the above-mentioned mask as the step of exposure on the photonasty substrate of above-mentioned second object, it is characterized in that: in the above-mentioned step of exposure, in order to stop on the optical surface of gas that produces on the above-mentioned photonasty substrate, to be included on the optical surface of the most close second object, one side of above-mentioned the 4th lens combination G4 and the light path between the above-mentioned photonasty substrate and to form the stream formation step that institute decides gas or flow of liquid attached to the most close second object, one side of above-mentioned the 4th lens combination G4.

Further, the present invention also provides a kind of microdevice manufacture method, it is characterized in that: comprise utilize exposure device of the present invention or exposure method the pattern exposure of above-mentioned mask on above-mentioned photonasty substrate step of exposure and the video picture step of the above-mentioned photonasty substrate video picture that exposes by above-mentioned step of exposure.

Description of drawings

Fig. 1 is that schematic representation has the pie graph according to the exposure device of the projection optical system of the embodiment of the invention;

Fig. 2 is the lens composition diagram of expression according to the projection optical system of first embodiment;

Fig. 3 is the coma figure of expression according to the projection optical system of first embodiment;

Fig. 4 is the lens composition diagram of expression according to the projection optical system of second embodiment;

Fig. 5 is the intelligent figure of expression according to the projection optical system of second embodiment;

Fig. 6 is the lens composition diagram of expression according to the projection optical system of the 3rd embodiment;

Fig. 7 is the coma figure of expression according to the projection optical system of the 3rd embodiment;

Fig. 8 is the process flow diagram of expression acquisition as the method for the semiconductor devices of microdevice;

Fig. 9 is the process flow diagram of expression acquisition as the method for the liquid crystal display of microdevice.

Embodiment

Generally, be loaded in the projection optical system on the exposure device, keep under the stable condition increasing as number formulary value aperture if the lens face of the most close picture side (wafer side) and the distance between the wafer are operating distance, then the lens external diameter also with the proportional increase of picture number formulary value pore size.Why a such reason is to produce negative high order spherical aberration.Below this point is described.

The lens face majority of close picture side of projection optical system forms the almost plane shape of small curve.In this case, from projection optical system, during outgoing, be subjected to big refraction action with large-numerical aperture, produce big high order spherical aberration at the lens face place of close picture side that forms the almost plane shape towards the light of wafer.Here, generation high order amount of spherical aberration is roughly proportional with above-mentioned operating distance D.Therefore, if operating distance D is established little, then can suppress little to the high order spherical aberration that produces, to the lens external diameter even greatly also can suppress smallerly as number formulary value aperture.

Therefore, among the present invention, basic comprising is for having the first lens combination G1, the second lens combination G2 of negative power, the 3rd lens combination G3 of positive light coke and the 4th lens combination G4 of positive light coke of positive light coke in turn from object space (mask side) beginning, according to conditional (1) operating distance D set in the fixed scope less.As a result, among the present invention, can when the change of inhibition lens external diameter is big, guarantee big picture number formulary value aperture.Below, with reference to each conditional of the present invention, further describe formation of the present invention.

Among the present invention, satisfy following conditional (1) along the optical surface of the most close second object, one side (the most close picture side :) of the 4th lens combination G4 and the operating distance D (mm) of the optical axis between second object (being wafer under the exposure device situation) at the most close wafer under the exposure device situation:

0.1＜D＜5 (1)

If surpass the higher limit of conditional (1), it is excessive that operating distance D becomes, and the high order spherical aberration of generation is big, and this high order spherical aberration is not only by the lens correction of close picture side, and need proofread and correct in advance by the lens that are arranged on object space.The result makes the formation of optical system become complicated, and the increase of the external diameter of lens, is difficult to realize the optical system of actual size.

On the one hand, if be lower than the lower limit of conditional (1), it is too small that operating distance D becomes, and the operability of optical system etc. significantly worsen.Particularly, under the exposure device situation, be difficult to prevent on gas (back is called " emergent gas ") that the resist that applies on the wafer produces owing to rayed the lens face attached to the most close picture side.And, being difficult to realize the automatic focus of wafer face, the danger that projection optical system contacts with wafer when the exchange wafer increases simultaneously.

And preferably the present invention satisfies following conditional (2).

0.001＜D/T＜0.2 (2)

Here, T be along the thickness of the optical axis of each optical element that constitutes above-mentioned the 4th lens combination G4 and, i.e. the lens gross thickness of the 4th lens combination G4.And as mentioned above, D is an operating distance.

If surpass the higher limit of conditional (2), the same with the situation of conditional (1), it is excessive that operating distance D becomes, and the high order spherical aberration of generation is big, and it is complicated that the formation of optical system becomes, and the increase of the external diameter of lens, and this is undesirable.If be lower than the lower limit of conditional (2), the same with the situation of conditional (1), it is too small that operating distance D becomes, prevent emergent gas attached on the wafer and the automatic focus of wafer face all be difficult to realize, the danger that the while projection optical system contacts with wafer increases, and this is undesirable.

And preferably the present invention satisfies following conditional (3).

0.02＜L/T (3)

Here, L is the distance along the optical axis between first object (being mask under the exposure device situation) and second object, i.e. distance between the image point.And as mentioned above, T is the lens gross thickness of the 4th lens combination G4.

Conditional (3) is to be used for the conditional of spherical aberration corrector and coma well.Promptly under ten fens big situations of the gross thickness T of the 4th lens combination G4, the spherical aberration and the coma that are produced are little, proofread and correct easily., if be lower than the lower limit of conditional (3), the gross thickness T of the 4th lens combination G4 becomes too small, is difficult to keeping under certain positive light coke situation spherical aberration corrector and coma well, and imaging performance worsens, and this is undesirable.

And preferably the distance L (mm) between the image point of projection optical system of the present invention satisfies following conditional (4):

800＜L＜1600 (4)

Conditional (4) is to guarantee the conditional of well proofreading and correct various aberrations in the wide projection visual field (being wide exposure area) under the exposure device situation.If surpass the higher limit of conditional (4), then the distance L between the image point becomes excessive, and it is big that optical system becomes, and this is undesirable.Particularly, under the exposure device situation, it is too high that device becomes, and can not constitute exposure device, and this is undesirable.On the contrary, if be lower than the lower limit of conditional (4), then be difficult to proofread and correct coma well, cause imaging performance to worsen, this is undesirable.

Though it is little to satisfy the high order spherical aberration that above-mentioned conditional (1) and (2) are produced, can not suppress generation fully is zero.Therefore, constitute among the present invention that at least one optical surface forms aspherical shape in a plurality of optical surfaces of optical system, promptly preferably by in optical system, introducing aspheric surface, so that roughly proofread and correct the high order spherical aberration fully.

And preferably the present invention satisfies following conditional (5):

0.01＜|F2|/L＜0.15 (5)

Here, F2 is the focal length of the second lens combination G2.And as mentioned above, L is the distance between the image point.

Conditional (5) be be used to obtain the image planes flatness cut down now and the relevant conditional of correction.If surpass the higher limit of conditional (5), to cut down now and undercorrection, image planes lose flatness, and this is undesirable.On the one hand, if be lower than the lower limit of conditional (5), the positive spherical aberration of generation is remarkable, even use aspheric surface also to be difficult to proofread and correct this aberration well, causes imaging performance to worsen, and this is undesirable.

And as previously mentioned, under the smaller situation of the operating distance D of exposure device, the emergent gas that produces on the resist is attached on the lens face of the most close picture side easily.As a result, the transmitance of the lens of close picture side descends, and the optical property of projection optical system worsens thereupon.Therefore, preferably among the present invention by on the optical surface of the most close picture side of the 4th lens combination G4 and the light path between the wafer, form decide gas or flow of liquid, prevent that emergent gas is attached on the optical surface.

Embodiments of the invention below are described with reference to the accompanying drawings.

Fig. 1 schematically illustrates the pie graph that has according to the exposure device of the projection optical system of the embodiment of the invention.And, in Fig. 1, set the optical axis AX that the Z axle is parallel to projection optical system 6, Y-axis is parallel to the paper of Fig. 1 in the plane vertical with optical axis AX, and X-axis is perpendicular to paper.

Have KrF in the illustrated exposure device and be excited LASER Light Source (emission center wavelength is 248.40nm) or ArF and be excited laser light wave 1 (emission center wavelength is (193.31nm)), as the light source that illumination light is provided.Form the mask (chopper wheel) 3 of deciding pattern to some extent from the light of light source 1 outgoing by lamp optical system 2 illuminations.Mask 3 by mask anchor clamps 4 on mask stage 5 with XY plane keeping parallelism.And, constitute following form, promptly mask stage 5 can move along mask face (being the XY plane) by drive system effect in abridged among the figure, and its position coordinates is by the metering of mask interferometer (not shown) and carry out position control.

Light from the pattern that forms on the mask 3 passes through projection optical system 6, forms the mask pattern picture on as the wafer 7 of photonasty substrate.Wafer 7 by wafer support (wafer anchor clamps) 8 on wafer platform 9 with XY plane keeping parallelism.And, constitute following form, promptly wafer platform 9 can move along wafer face (being the XY plane) by drive system effect in abridged among the figure, and its position coordinates is by the metering of wafer interferometer (not shown) and carry out position control.Like this, can be in the plane vertical with the optical axis AX of projection optical system 6 two-dimentional drive controlling wafer 7 in (XY plane), exposure or scan exposure are in batches exposed at each exposed portion of wafer 7 one by one by the pattern of mask 3 simultaneously.

And, in illustrated exposure device on the narrow light path between projection optical system 6 and the wafer 7, form decide gas or flow of liquid, feedway 10 is set, be used for supply gas or liquid.That is, feedway 10 is configured for preventing to be coated in the means that prevent on the lens face of the most close wafer one side that emergent gas that the resist on the wafer 7 produces is attached to projection optical system 6.And feedway 10 in order really emergent gas to be removed, preferably is provided for attracting containing the suction device 11 of the gas of emergent gas from light path under supplying with as gas situations such as air.

And, in each embodiment described later, projection optical system 6 of the present invention begins in turn to be made of the first lens combination G1, the second lens combination G2 of negative power, the 3rd lens combination G3 of positive light coke and the 4th lens combination G4 of positive light coke of positive light coke from mask one side.And in first embodiment and second embodiment, it is 1.50839 quartz that all optical materials that constitute projection optical system 6 all use refractive index to centre wavelength 248.40nm.In addition, in the projection optical system 6 of the 3rd embodiment, using refractive index to centre wavelength 193.31nm is 1.560353 quartz, and the refractive index of centre wavelength 193.31nm is 1.501474 fluorite.

And, in each embodiment, aspheric surface is y at the height perpendicular to optical axis direction, highly being the y position on from section, aspheric summit to aspheric surface is z along the distance (sag amount) of optical axis, vertex curvature radius (benchmark radius-of-curvature) is r, the circular cone coefficient is k, when n time asphericity coefficient is Cn, represents with following mathematical expression (a).And among each embodiment, the lens face that forms aspherical shape adds * number on the right side of face sequence number.[mathematical expression 1] z=(y ²/ r)/[1+{1-(1+k) y ²/ r ²} ^1/2]+C ₄Y ⁴+ C ₆Y ⁶+ C ₈Y ⁸+ C ₁₀Y ¹⁰+ C ₁₂Y ¹²+ C ₁₄Y ¹⁴+ C ₁₆Y ¹⁶+ C ₁₈Y ¹⁸(a) [first embodiment]

Fig. 2 illustrates according to the lens of the projection optical system of first embodiment and forms.In the projection optical system among Fig. 2, the first lens combination G1 begins to be made of following lens in turn from mask one side: parallel flat P1, concave surface is facing to the positive meniscus lens L11 of mask one side, concave surface is facing to the positive meniscus lens L12 of mask one side, biconvex lens L13, biconvex lens L14, biconcave lens L15, biconcave lens L16, biconcave lens L17, the face of mask one side forms the biconcave lens L18 of aspherical shape, concave surface is facing to the diverging meniscus lens L19 of mask one side, form the positive meniscus lens L110 of the concave surface of aspherical shape facing to mask one side, concave surface is facing to the positive meniscus lens L111 of mask one side, concave surface is facing to the positive meniscus lens L112 of mask one side, convex surface is facing to the positive meniscus lens L113 of mask one side, convex surface is facing to the positive meniscus lens L114 of mask one side, convex surface is facing to the positive meniscus lens L115 of mask one side.

And the second lens combination G2 begins to be made of following lens in turn from mask one side: the concave surface that the forms aspherical shape diverging meniscus lens L24 that the face that the face of the face of the diverging meniscus lens L21 of film one side, mask one side and wafer one side all forms biconcave lens L22, mask one side of aspherical shape forms the biconcave lens L23 of aspherical shape, the convex surface that forms aspherical shape is acted in opposition to film one side that acts in opposition to.

And the 3rd lens combination G3 begins to be made of following lens in turn from mask one side: positive meniscus lens L31, concave surface that concave surface faces toward mask one side form the biconvex lens L33 of aspherical shape, biconvex lens L34, concave surface facing to the diverging meniscus lens L35 of mask one side, positive meniscus lens L36, the positive meniscus lens L37 that convex surface faces toward mask one side, the positive meniscus lens L38 that convex surface faces toward mask one side that convex surface faces toward mask one side facing to the positive meniscus lens L32 of mask one side, the face of mask one side.

And the 4th lens combination G4 begins to be made of following lens in turn from mask one side: convex surface is facing to positive meniscus lens L41, the diverging meniscus lens L42 that convex surface faces toward mask one side, the positive meniscus lens L43 that convex surface faces toward mask one side of mask one side.In first embodiment, constitute following form, promptly feedway 10 is supplied with water (refractive index to centre wavelength 248.40nm is 1.38), forms the current in the narrow light path that is filled between projection optical system 6 and the wafer 7.That is, the projection optical system of first embodiment constitutes the water logging optical system.

Shown in following table (1), list parameter value according to the projection optical system of first embodiment.In the major parameter of table (1), λ represents the centre wavelength of exposure light (KrF be excited laser), and β represents the projection multiplying power, and Ym represents maximum image height, and NA represents that D represents operating distance as number formulary value aperture.And, the optical component parameter in turn that expression begins from wafer one side in the table (1), the face sequence number of first row is the face orders that begin from wafer one side, the r of secondary series is that the radius-of-curvature of each face (is a vertex curvature radius under the aspheric surface situation: mm), tertial d is that the axially spaced-apart of each face is face (mm) at interval, and the n of the 4th row is the refractive indexes for central wavelength lambda.And, radius-of-curvature r for towards the radius-of-curvature of the convex surface of wafer one side for just, for towards the radius-of-curvature of the concave surface of wafer one side for negative.

[table 1]

(major parameter)

λ＝248.40nm Ym＝11.6mm

β＝1/5 NA＝0.89

D＝0.5mm

(optical component parameter) n face sequence number r d n

( ) 1 ∞ 0.500000 1.38000 ( ： ) 2-278.38803 81.380761 1.50839 ( L43 ) 3-144.83885 1.0000004-184.30485 18.915187 1.50839 ( L42 ) 5-704.03874 4.8228986-487.23542 38.288622 1.50839 ( L41 ) 7-163.51870 1.0683268-316.44413 39.899826 1.50839 ( L38 ) 9-173.82425 1.16654110-514.79368 38.713118 1.50839 ( L37 ) 11-256.84706 2.99358412-1486.19304 39.000000 1.50839 ( L36 ) 13-349.92079 5.23116014 684.32388 30.000000 1.50839 ( L35 ) 15 535.80500 16.11159416 1423.09713 49.000000 1.50839 ( L34 ) 17-417.61955 1.00000018 534.19578 48.373958 1.50839 ( L33 ) 19*-1079.65640 3.79381820 363.41400 41.353623 1.50839 ( L32 ) 21 11327.06579 1.00000022 221.09486 38.438778 1.50839 ( L31 ) 23 576.34104 13.48369824* 72641.42689 14.000000 1.50839 ( L24 ) 25 169.78783 36.50236126-721.39710 14.000000 1.50839 ( L23 ) 27* 163.09868 55.54684028*-154.09821 14.000000 1.50839 ( L22 ) 29* 4602.19163 36.94067630*-162.70945 24.726155 1.50839 ( L21 ) 31-277.47625 9.36529932-233.72917 35.657146 1.50839 ( L115 ) 33-199.92054 3.65134234-760.94438 50.681020 1.50839 ( L114 ) 35-267.98451 1.00000036-8019.33680 51.000000 1.50839 ( L113 ) 37-361.32067 1.00000038 359.57299 51.000000 1.50839 ( L112 ) 39 22205.61483 1.00000040 254.06189 53.118722 1.50839 ( L111 ) 41 814.49441 2.31084742 207.87392 41.299164 1.50839 ( L110 ) 43* 325.56504 2.94457344 227.90224 30.090705 1.50839 ( L19 ) 45 176.14016 30.81868246-1560.80134 14.019437 1.50839 ( L18 ) 47* 211.19874 18.61577548-419.25972 14.000000 1.50839 ( L17 ) 49 162.14317 19.13716950-385.99461 14.000000 1.50839 ( L16 ) 51 377.23568 16.48349252-192.32222 14.000000 1.50839 ( L15 ) 53 577.40909 1.00000054 347.51755 23.387796 1.50839 ( L14 ) 55-746.67387 1.00000056 230.21868 28.789242 1.50839 ( L13 ) 57-632.24530 1.98763258 366.04498 19.840462 1.50839 ( L12 ) 59 658.39254 1.00013660 436.06541 17.664657 1.50539 ( L11 ) 61 1827.22708 2.35532062 ∞ 8.000000 1.50839 ( P1 ) 63 ∞ 31.664788

(mask face) (aspherical surface data) 19 κ=0.000000C ₄=0.108661 * 10 ^-11C ₆=0.115990 * 10 ^-13C ₈=-0.252101 * 10 ^-18C ₁₀=0.326093 * 10 ^-22C ₁₂=-0.249918 * 10 ^-26C ₁₄=0.826218 * 10 ^-31C ₁₆=-0.105890 * 10 ^-35C ₁₈=0.00000024 κ=0.000000C ₄=-0.666892 * 10 ^-8C ₆=-0.834628 * 10 ^-13C ₈=0.905999 * 10 ^-17C ₁₀=-0.275733 * 10 ^-21C ₁₂=-0.577535 * 10 ^-25C ₁₄=0.700442 * 10 ^-29C ₁₆=-0.229827 * 10 ^-33C ₁₈=0.00000027 κ=0.000000C ₄=0.741662 * 10 ^-9C ₆=-0.603176 * 10 ^-12C ₈=-0.996260 * 10 ^-17C ₁₀=0.500372 * 10 ^-20C ₁₂=-0.274589 * 10 ^-23C ₁₄=0.173610 * 10 ^-27C ₁₆=0.556996 * 10 ^-32C ₁₈=0.00000028 κ=0.000000C ₄=0.398482 * 10 ^-8C ₆=0.375195 * 10 ^-12C ₈=-0.609480 * 10 ^-16C ₁₀=-0.178686 * 10 ^-19C ₁₂=-0.112080 * 10 ^-24C ₁₄=-0.141732 * 10 ^-27C ₁₆=0.314821 * 10 ^-31C ₁₈=0.00000029 κ=0.000000C ₄=-0.891861 * 10 ^-8C ₆=0.359788 * 10 ^-12C ₈=-0.218558 * 10 ^-16C ₁₀=-0.633586 * 10 ^-20C ₁₂=-0.317617 * 10 ^-24C ₁₄=0.914859 * 10 ^-28C ₁₆=-0.392754 * 10 ^-32C ₁₈=0.00000030 κ=0.000000C ₄=0.217828 * 10 ^-8C ₆=0.199483 * 10 ^-12C ₈=0.346439 * 10 ^-16C ₁₀=0.816535 * 10 ^-21C ₁₂=0.143334 * 10 ^-24C ₁₄=-0.229911 * 10 ^-28C ₁₆=-0.164178 * 10 ^-32C ₁₈=0.00000043 κ=0.000000C ₄=0.826617 * 10 ⁹C ₆=-0.152893 * 10 ^-12C ₈=-0.105637 * 10 ^-17C ₁₀=-0.904672 * 10 ^-23C ₁₂=-0.326047 * 10 ^-25C ₁₄=-0.178192 * 10 ^-30C ₁₆=0.656718 * 10 ^-34C ₁₈=0.00000047 κ=0.000000C ₄=-0.374153 * 10 ^-7C ₆=-0.139807 * 10 ^-11C ₈=-0.602273 * 10 ^-16C ₁₀=-0.289281 * 10 ^-19C ₁₂=0.109996 * 10 ^-22C ₁₄=-0.966189 * 10 ^-27C ₁₆=0.000000 C ₁₈=0.000000

(conditional respective value)

T＝138.58mm

L＝1323.13mm

F2＝-68.34mm

(1)D＝0.5

(2)D/T＝0.003608

(3)T/L＝0.1047

(4)L＝1323.13

(5)|F2|/L＝0.05165

Fig. 3 illustrates the coma according to the projection optical system of first embodiment.The coma size Expressing of chopper wheel.Figure knows expression as coma, among first embodiment, even can know and realize 0.89 so very high picture number formulary value aperture, also can proofread and correct coma well.[second embodiment]

Fig. 4 forms according to the lens of the projection optical system of second embodiment.In the projection optical system among Fig. 4, the first lens combination G1 begins to be made of following lens in turn from mask one side: parallel flat P1, biconvex lens L11, biconvex lens L12, biconvex lens L13, biconvex lens L14, convex surface is facing to the diverging meniscus lens L15 of mask one side, biconcave lens L16, biconcave lens L17, biconcave lens L18, concave surface is facing to the diverging meniscus lens L19 of mask one side, concave surface is facing to the positive meniscus lens L110 of mask one side, concave surface is facing to the positive meniscus lens L111 of mask one side, biconvex lens L112, biconvex lens L113, convex surface is facing to the positive meniscus lens L114 of mask one side, convex surface is facing to the positive meniscus lens L115 of mask one side.

And the second lens combination G2 begins to be made of following lens in turn from mask one side: convex surface forms the biconcave lens L23 of aspherical shape, forms the diverging meniscus lens L24 of the convex surface of aspherical shape facing to mask one side facing to the act in opposition to diverging meniscus lens L22 of film one side, the face of mask one side of the diverging meniscus lens L21 of mask one side, the concave surface that forms aspherical shape.

And the 3rd lens combination G3 begins to be made of following lens in turn from mask one side: concave surface facing to positive meniscus lens L31, biconvex lens L32, biconvex lens L33, the biconvex lens L34 of mask one side, form the concave surface of aspherical shape facing to the diverging meniscus lens L35 of mask one side, convex surface facing to the positive meniscus lens L36 of mask one side, convex surface facing to the positive meniscus lens L37 of mask one side, convex surface positive meniscus lens L38 facing to mask one side.

And the 4th lens combination G4 begins to be made of facing to the positive meniscus lens L43 of mask one side facing to diverging meniscus lens L42, the convex surface of mask one side positive meniscus lens L41, the convex surface of convex surface facing to mask one side in turn from mask one side.In a second embodiment, constitute: feedway 10 air supplies form the airflow in the narrow light path that is filled between projection optical system 6 and the wafer 7.And the refractive index of air is 1.0, the expression of omitting air refraction in table (1) and the table (2).

In the following table (2), list parameter value according to the projection optical system of second embodiment.In the major parameter of table (2), λ represents the centre wavelength of exposure light (KrF be excited laser), and β represents the projection multiplying power, and Ym represents maximum image height, and NA represents that D represents operating distance as number formulary value aperture.And, in the middle optical component parameter of table (2), the face sequence number of first row is the face orders that begin from wafer one side, the r of secondary series is that the radius-of-curvature of each face (is a vertex curvature radius under the aspheric surface situation: mm), tertial d is that the axially spaced-apart of each face is face (mm) at interval, and the n of the 4th row is the refractive indexes for centre wavelength.And, radius-of-curvature r for towards the radius-of-curvature of the convex surface of wafer one side for just, for towards the radius-of-curvature of the concave surface of wafer one side for negative.

[table 2] (major parameter) λ=248.40nm β=1/5Ym=11.6 mmNA=0.88D=2.5mm (optical component parameter) face sequence number r d n

( ) 1 ∞ 2.5000002-1270.40584 77.251684 1.50839 ( L43 ) 3-110.72777 1.0000004-132.78132 18.339030 1.50839 ( L42 ) 5-1152.71012 4.9388236-723.27523 38.179053 1.50839 ( L41 ) 7-181.43794 1.0509568-297.93827 41.055103 1.50839 ( L38 ) 9-166.87288 2.38293110-427.65954 40.104060 1.50839 ( L37 ) 11-244.29595 4.90388712-3387.32378 39.000000 1.50839 ( L36 ) 13-420.50275 7.61473214 540.89354 29.000000 1.50839 ( L35 ) 15* 474.45854 15.15859116 897.00143 50.000000 1.50839 ( L34 ) 17-506.01529 1.13842918 570.25291 48.910744 1.50839 ( L33 ) 19-952.62514 5.05520320 378.82882 43.067991 1.50839 ( L32 ) 21-78415.53819 1.00000022 258.78592 40.107177 1.50839 ( L31 ) 23 1095.44138 10.65161224* 4500.00000 14.000000 1.50839 ( L24 ) 25 189.07807 34.49941426-808.48380 14.000000 1.50839 ( L23 ) 27* 177.87730 56.72116928*-143.78515 14.000000 1.50839 ( L22 ) 29-2706.72147 35.78147830-159.97919 24.199673 1.50839 ( L21 ) 31-298.84455 8.62666332-239.84826 35.242789 1.50839 ( L115 ) 33-180.77301 1.70697534-521.24921 49.373247 1.50839 ( L114 ) 35-258.27460 1.00000036 8792.77756 51.000000 1.50839 ( L113 ) 37-481.86914 1.00000038 336.67038 51.000000 1.50839 ( L112 ) 39 1368401.4891 5.06453040 261.20998 49.550014 1.50839 ( L111 ) 41 1066.67182 2.87202242 222.75670 41.276937 1.50839 ( L110 ) 43 309.81127 2.98827744 224.97144 30.049724 1.50839 ( L19 ) 45 178.92869 24.17576046-4551.95559 14.140578 1.50839 ( L18 ) 47 163.47384 23.58903348-435.59405 14.000000 1.50839 ( L17 ) 49 212.20765 20.35060250-255.41661 14.000000 1.50839 ( L16 ) 51 476.81062 19.85408552-166.35775 14.000000 1.50839 ( L15 ) 53-3092.07241 1.00000054 1013.37837 21.280878 1.50839 ( L14 ) 55-649.18244 14.09568856 562.23230 28.026479 1.50839 ( L13 ) 57-495.38628 1.00000058 400.84453 30.179322 1.50839 ( L12 ) 59-861.42926 1.00000060 1152.72543 51.631197 1.50839 ( L11 ) 61-1403.48221 1.00005762 ∞ 8.000000 1.50839 ( P1 ) 63 ∞ 59.860116

(mask face) (aspherical surface data) 15 κ=0.135621C ₄=0.132068 * 10 ^-9C ₆=0.254077 * 10 ^-14C ₈=0.520547 * 10 ^-18C ₁₀=-0.100941 * 10 ^-22C ₁₂=0.104925 * 10 ^-27C ₁₄=0.102740 * 10 ^-31C ₁₆=-0.510544 * 10 ^-36C ₁₈=0.909690 * 10 ^-4124 κ=0.000000C ₄=-0.757298 * 10 ^-8C ₆=-0.194318 * 10 ^-12C ₈=0.114312 * 10 ^-16C ₁₀=0.325024 * 10 ^-21C ₁₂=-0.811964 * 10 ^-25C ₁₄=0.733478 * 10 ^-21C ₁₆=-0.344978 * 10 ^-33C ₁₈=0.593551 * 10 ^-3827 κ=0.000000C ₄=0.274792 * 10 ^-8C ₆=-0.591295 * 10 ^-12C ₈=-0.101460 * 10 ^-16C ₁₀=0.649406 * 10 ^-20C ₁₂=-0.146673 * 10 ²³C ₁₄=0.199948 * 10 ^-27C ₁₆=-0.110641 * 10 ^-31C ₁₈=0.153140 * 10 ^-3628 κ=0.000000C ₄=0.181334 * 10 ^-8C ₆=0.386127 * 10 ^-12C ₈=0.250729 * 10 ^-16C ₁₀=-0.340803 * 10 ^-20C ₁₂=0.956332 * 10 ^-24C ₁₄=-0.123696 * 10 ^-27C ₁₆=0.102868 * 10 ^-31C ₁₈=-0.312692 * 10 ³⁶(conditional respective value) T=133.77mmL=1407.55mmF2=-72.10mm (1) D=2.5 (2) D/T=0.01869 (3) T/L=0.09504 (4) L=1407.55 (5) | F2f/L=0.05122

Fig. 5 illustrates the coma according to the projection optical system of second embodiment.The coma size Expressing of one side of chopper wheel.Figure knows expression as coma, among second embodiment, even can know and realize 0.88 so very high picture number formulary value aperture, also can proofread and correct coma well.[the 3rd embodiment]

Fig. 6 forms according to the lens of the projection optical system of the 3rd embodiment.In the projection optical system of Fig. 6, the first lens combination G1 begins to be made of following lens in turn from mask one side: biconcave lens L11, biconvex lens L12, biconvex lens L13, convex surface face toward the positive meniscus lens L21 of mask one side, positive meniscus lens L22 that convex surface face toward mask one side facing to diverging meniscus lens L15, biconcave lens L16, biconcave lens L17, the concave surface of mask one side facing to positive meniscus lens L18, biconvex lens L19, biconvex lens L20, the convex surface of mask one side facing to positive meniscus lens L14, the convex surface of mask one side.

And the second lens combination G2 begins to be made of following lens in turn from mask one side: convex surface is facing to diverging meniscus lens L23, diverging meniscus lens L24, the biconcave lens L25 that convex surface faces toward mask one side, the diverging meniscus lens L26 that concave surface faces toward mask one side of mask one side.

And the 3rd lens combination G3 begins to be made of following lens in turn from mask one side: concave surface faces toward diverging meniscus lens L30, the biconvex lens L31 of mask one side, the positive meniscus lens L32 that convex surface faces toward mask one side facing to positive meniscus lens L27, biconvex lens L28, biconvex lens L29, the convex surface of mask one side.

And the 4th lens combination G4 begins to be made of facing to positive meniscus lens L35, the parallel flat P1 of mask one side facing to positive meniscus lens L34, the convex surface of mask one side positive meniscus lens L33, the convex surface of convex surface facing to mask one side in turn from mask one side.

List parameter value in the following table (3) according to the projection optical system of the 3rd embodiment.In the major parameter of table (3), λ represents the centre wavelength of exposure light (ArF be excited laser), and β represents the projection multiplying power, and Ym represents maximum image height, and NA represents that D represents operating distance as number formulary value aperture.And, in the optical component parameter in the table (3), the face sequence number of first row is the face orders that begin from wafer one side, the r of secondary series is that the radius-of-curvature of each face (is a vertex curvature radius under the aspheric surface situation: mm), tertial d is that the axially spaced-apart of each face is face (mm) at interval, and the n of the 4th row is the refractive indexes for centre wavelength.And, radius-of-curvature r for towards the radius-of-curvature of the convex surface of wafer for just, for towards the radius-of-curvature of the concave surface of wafer for negative.

[table 3]

(major parameter)

λ＝193.31nm

β＝1/4

Ym＝11.6mm

NA＝0.85

D＝4.8mm

(optical component parameter) face sequence number r d n

( ) 1 ∞ 4.8000002 ∞ 4.000000 1.501474 ( P1 ) 3 ∞ 1.5168034-347.07689 59.005134 1.560353 ( L35 ) 5*-147.42602 24.6721346-155.30862 36.048560 1.560353 ( L34 ) 7*-127.29829 3.8189828-495.00000 41.252390 1.560353 ( L33 ) 9-186.65984 1.83721010-8649.91361 41.354410 1.560353 ( L32 ) 11-338.42422 7.81286412 3117.31974 56.482714 1.501474 ( L31 ) 13-242.28533 6.25967214-219.07804 22.000000 1.560353 ( L30 ) 15-295.48408 1.00000016 982.58745 35.100000 1.560353 ( L29 ) 17-717.19251 1.02750518* 345.99292 35.100000 1.501474 ( L28 ) 19-1657.34210 4.87054620 170.09691 43.238577 1.501474 ( L27 ) 21* 1247.60125 3.72828522 2570.01253 12.600000 1.560353 ( L26 ) 23* 140.20387 38.04654924-302.07583 9.000000 1.560353 ( L25 ) 25 174.63448 47.22873626*-110.02031 11.990000 1.560353 ( L24 ) 27-227.61981 19.28796728-145.96360 13.625000 1.560353 ( L23 ) 29-993.54187 2.18097930-926.50000 49.004494 1.501474 ( L22 ) 31-211.89314 1.80500432-1634.25815 46.870000 1.560353 ( L21 ) 33-309.72040 1.09000034 1870.87868 44.992783 1.560353 ( L20 ) 35-397.39272 1.09000036 310.83083 46.730190 1.560353 ( L19 ) 37-12381.83318 1.06525738 219.21300 43.890391 1.560353 ( L18 ) 39 459.28473 62.35512240*-1607.04793 23.010030 1.560353 ( L17 ) 41* 210.26262 27.39236042-182.19964 11.990000 1.560353 ( L16 ) 43 397.04358 31.49104544-126.09618 12.834065 1.560353 ( L15 ) 45-4686.72757 31.68335446-7627.00504 35.000000 1.560353 ( L14 ) 47-178.80540 1.09000048 362.15153 35.000000 1.560353 ( L13 ) 49-434.88773 1.00000050 217.92403 34.335000 1.560353 ( L12 ) 51-854.29087 44.74188152-293.27068 11.083963 1.560353 ( L11 ) 53 198.96759 58.442143

( ) ( ) 6κ＝0.000000C4＝-0.717239×10-08 C6＝-0.101122×10-11C8＝0.181395×10-16 C10＝0.626626×10-20C12＝0.124335×10-23 C14＝0.306352×10-27C16＝-0.451516×10-31 C18＝0.0000008κ＝0.000000C4＝-0.171015×10-09 C6＝-0.130062×10-12C8＝-0.919066×10-17 C10＝-0.567556×10-22C12＝0.169635×10-25 C14＝0.232608×10-30C16＝0.300428×10-35 C18＝0.285031×10-3819κ＝0.000000C4＝0.360694×10-09 C6＝0.338660×10-13C8＝0.880881×10-18 C10＝-0.289409×10-22C12＝-0.909784×10-27 C14＝0.759036×10-31C16＝-0.400220×10-35 C18＝0.235613×10-3922κ＝0.000000C4＝-0.139770×10-08 C6＝-0.642555×10-13C8＝0.410206×10-17 C10＝0.559358×10-21C12＝-0.314678×10-25 C14＝-0.577909×10-30C16＝0.154846×10-33 C18＝-0.130804×10-3724κ＝0.000000C4＝-0.206235×10-08 C6＝-0.790155×10-13C8＝-0.830872×10-17 C10＝-0.678238×10-20C12＝-0.145920×10-23 C14＝-0.234851×10-28C16＝0.259860×10-31 C18＝-0.223564×10-3527κ＝0.000000C4＝0.226273×10-08 C6＝-0.406498×10-12C8＝-0.357047×10-17 C10＝-0.897263×10-21C12＝-0.510647×10-24 C14＝-0.322709×10-29C16＝0.480022×10-32 C18＝-0.529104×10-3641κ＝0.000000C4＝-0.309170×10-08 C6＝-0.215102×10-12C8＝-0.403443×10-16 C10＝0.485396×10-20C12＝0.676821×10-25 C14＝-0.456289×10-28C16＝0.323963×10-31 C18＝-0.337348×10-3642κ＝0.000000C4＝-0.156117×10-07 C6＝0.118556×10-11C8＝-0.440276×10-16 C10＝-0.123461×10-19C12＝0.933626×10-24 C14＝0.134725×10-27C16＝-0.261036×10-31 C18＝0.000000 ( ) T＝172.15mmL＝1246.87mmF2＝-49.585mm ( 1 ) D＝4.8 ( 2 ) D/T＝0.02788 ( 3 ) T/L＝0.13807 ( 4 ) L＝1246.87 ( 5 ) |F2|/L＝0.03977

Fig. 7 illustrates the coma according to the projection optical system of the 3rd embodiment.The coma size Expressing of chopper wheel one side.Figure knows expression as coma, among the 3rd embodiment, even can know and realize 0.85 so very high picture number formulary value aperture, also can proofread and correct coma well.

As mentioned above, in projection optical system, can suppress the lens external diameter on the one hand and become big, can guarantee very high picture number formulary value aperture on the one hand according to the various embodiments described above.Therefore, in exposure device according to the embodiment of embodiment 1,2, based on KrF be excited laser, utilize the high resolving power projection optical system, can carry out the high precision projection exposure.And, in the exposure device according to the embodiment of embodiment 3, based on ArF be excited laser, utilize the high resolving power projection optical system, can carry out the high precision projection exposure.

In projection optical system according to the various embodiments described above, throw light on (illumination step), utilize projection optical system being formed on the pattern exposure (step of exposure) on the photonasty substrate that the transfer printing on the mask is used by lamp optical system to mask (chopper wheel), can make microdevice (semiconductor element, imaging apparatus, liquid crystal display cells, thin-film head etc.).Below, according to the exposure device that utilizes the foregoing description as form on the wafer of photonasty substrate etc. fixed wiring, an example of the method when obtaining the semiconductor devices as microdevice describes with reference to the process flow diagram of Fig. 8.

At first, in the step 301 of Fig. 8, deposited metal film on one group of wafer.Then, in step 302, on the metal film of described one group of wafer, apply resist.Then, in step 303, the exposure device that utilizes the foregoing description the picture of mask pattern by described projection optical system transfer printing each exposure region on described one group of wafer that exposes in turn.Then, in step 304, after the photoresist video picture on described one group of wafer, in step 305, resist pattern on described one group of wafer is carried out etching as mask, in each exposure region of each wafer, form and the corresponding wiring of pattern on the mask.Then, by form the thin film circuit wiring again on the upper strata, make devices such as semiconductor element.Utilize the above-mentioned semiconductor device manufacture method to make the imperceptible semiconductor devices of wiring with high productivity.

And, in the exposure device of above-mentioned embodiment, by go up at dull and stereotyped (glass substrate) form fixed pattern (wiring, electrode wiring), can obtain liquid crystal display cells as microdevice.Below, with reference to the process flow diagram of Fig. 9, an example according to the method is described.In Fig. 9, form in the technology 401 at pattern, the exposure device that utilizes each embodiment is realized so-called photoetching process to the exposure of the pattern transfer of mask (glass substrate of coating resist etc.) on the photonasty substrate.By this photoetching process on the photonasty substrate, form comprise a plurality of electrodes decide the wiring.Then, substrate after the exposure through video picture technology, etch process, peel off each technology such as resist technology, on substrate, form fixed wiring, the colored filter that carries out the transition to the back forms technology 402.

Then, in colored filter formed technology 402,3 some groups of corresponding R (red), G (green), B (indigo plant) were arranged in a plurality of array-likes, and formed the colored filter that R, G, three bar shaped bank of filters of B are arranged along a plurality of horizontal scanning line directions.Then, after colored filter forms technology 402, carry out unit assembly technology 403.In unit assembly technology 403, utilize at pattern and form having of technology 401 acquisitions the decided substrate of pattern and the colored filter assembling liquid crystal panel (liquid crystal cells) that colored filter forms technology 402 acquisitions.In unit assembly technology 403, for example decide the substrate of pattern and form at colored filter between the colored filter of technology 402 acquisitions to inject liquid crystal, manufacturing liquid crystal panel (liquid crystal cells) in the institute that has that pattern forms that technology 401 obtains.

Then, in technology for assembling 404, installation makes the liquid crystal panel of being assembled (liquid crystal cells) carry out each parts such as the circuit of display action, bias light, finishes liquid crystal display cells.By the manufacture method of above-mentioned liquid crystal display cells, can obtain to have the liquid crystal display cells of very trickle wiring with high productivity.

And, in the above-mentioned embodiment,, be not limited to this though light source uses KrF to be excited LASER Light Source, for example use that to comprise that ArF is excited other suitable light sources of LASER Light Source (wavelength is 193nm) also passable.

And, in the above-described embodiment, though be that example describes the present invention with the projection optical system that is installed on the exposure device, obviously the present invention also can be applicable to first object as the projection optical system that is formed on second object.

As mentioned above, the present invention can guarantee very large picture number formulary value aperture when the change of inhibition lens external diameter is big, can realize the high resolving power projection optical system.Therefore, utilize the exposure device with the high resolving power projection optical system in big picture number formulary value aperture of the present invention, can be with the good microdevice of high precision manufacturing.

Claims (11)

1. projection optical system, its as number formulary value aperture be more than 0.75, based on wavelength be below the 300nm decide light the picture of first object be formed on second object,

Have first lens combination (G1) of positive light coke, second lens combination (G2) of negative power, the 3rd lens combination (G3) of positive light coke and the 4th lens combination (G4) of positive light coke in turn from first object, one side, it is characterized in that:

Distance D (mm) along optical axis between the optical surface of the most close second object, one side of above-mentioned the 4th lens combination (G4) and above-mentioned second object satisfies following condition:

0.1＜D＜5 (1)

2. projection optical system according to claim 1, it is characterized in that: each optical element that constitutes above-mentioned the 4th lens combination (G4) is along the thickness of optical axis and be T, when the distance of optical axis is D (mm), satisfy following condition between the optical surface of the most close second object of above-mentioned the 4th lens combination (G4) one side and above-mentioned second object:

0.001＜D/T＜0.2 (2)

3. projection optical system according to claim 1 and 2 is characterized in that: above-mentioned optical system be more than 0.8 as number formulary value aperture.

4. projection optical system according to claim 1 and 2, it is characterized in that: each optical element that constitutes above-mentioned the 4th lens combination G4 is along the thickness of optical axis and be T, when the distance of optical axis is L, satisfy following condition between above-mentioned first object and second object:

0.02＜L/T (3)

5. projection optical system according to claim 1 and 2 is characterized in that: the distance L (mm) along optical axis between above-mentioned first object and above-mentioned second object satisfies following condition:

800＜L＜1600 (4)

6. projection optical system according to claim 1 and 2 is characterized in that: the focal length of above-mentioned second lens combination (G2) is F2, when the distance of optical axis is L, satisfies following condition between above-mentioned first object and above-mentioned second object:

0.01＜|F2|/L＜0.15 (5)

7. projection optical system according to claim 1 and 2 is characterized in that: constitute in a plurality of optical surfaces of above-mentioned optical system and have at least an optical surface to form aspherical shape.

8. exposure device is characterized in that:

Has the illuminator that is used to throw light on as the mask of above-mentioned first object, resembling of the pattern that forms on the above-mentioned mask be formed on as on the photonasty substrate of above-mentioned second object as any one described projection optical system in the claim 1 to 7, stop the gas that produces on the above-mentioned photonasty substrate attached to the anti-locking apparatus that adheres on the optical surface of the most close second object, one side of above-mentioned the 4th lens combination (G4).

9. exposure device according to claim 8 is characterized in that: above-mentionedly prevent that means have on the optical surface of the most close second object, one side of above-mentioned the 4th lens combination (G4) and the light path between the above-mentioned photonasty substrate and form the stream formation device that institute decides gas or flow of liquid.

10. exposure method comprises:

Illumination is as the illumination step of the mask of above-mentioned first object,

By as any one described projection optical system in the claim 1 to 7, the pattern exposure that forms on the above-mentioned mask as the step of exposure on the photonasty substrate of above-mentioned second object,

It is characterized in that:

In the above-mentioned step of exposure, in order to stop on the optical surface of gas that produces on the above-mentioned photonasty substrate, to be included on the optical surface of the most close second object, one side of above-mentioned the 4th lens combination (G4) and the light path between the above-mentioned photonasty substrate and to form the stream formation step that institute decides gas or flow of liquid attached to the most close second object, one side of above-mentioned the 4th lens combination (G4).

11. microdevice manufacture method, it is characterized in that: comprise utilize exposure device as claimed in claim 8 or 9 or the described exposure method of claim 10 the pattern exposure of above-mentioned mask on above-mentioned photonasty substrate step of exposure and by above-mentioned step of exposure the video picture step of the above-mentioned photonasty substrate video picture of exposure.

Images