CN1420627A - RF communication amplifier circuit capable of preventing diode protection circuit from generating electromagnetic interference - Google Patents
RF communication amplifier circuit capable of preventing diode protection circuit from generating electromagnetic interference Download PDFInfo
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- CN1420627A CN1420627A CN 01138589 CN01138589A CN1420627A CN 1420627 A CN1420627 A CN 1420627A CN 01138589 CN01138589 CN 01138589 CN 01138589 A CN01138589 A CN 01138589A CN 1420627 A CN1420627 A CN 1420627A
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- conduction region
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- communication amplifier
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Abstract
A communication amplifying circuit to prevent the diode protective circuit from creating the electromagnetic interference includes a bias circuit to provide the earthing bias for the communication amplifying circuit and at least one amplifying unit being used to make a power amplification for the input signal. Each amplifying unit consists of a bipolar junction transistor being used to receive the input signal and to produce the output signal having been power amplified, a diode being used for leading the current in reversal flow at the earthing bias circuit to prevent the transistor from being damaged. The diode is composed of two symmetric negative electrode contacts which can counterbalance and to reduce the electromagnetic interference produced by the current exported from the diode.
Description
Technical field
The invention provides a kind of radio-frequency (RF) communication amplifier circuit, refer to that especially a kind of protective circuit of diode that prevents produces the radio-frequency (RF) communication amplifier circuit of electromagnetic interference.
Background technology
In modern information-intensive society, flourishing mobile radio networks can allow the user pass through mobile phone (mobile phone) and even carry out the transmission interchange of information exchange, interpersonal communication thought, knowledge whenever and wherever possible.Because the information in the wireless mobile communications is with the form transmission of high frequency radio signal, want the information of the form that can correctly receive radio signals, special radio-frequency (RF) communication amplifier circuit must be set in the mobile phone come amplifying signal, after suitable power amplification, the user could receive correct complete information with mobile phone.
See also Fig. 1, Fig. 1 is the circuit diagram of known communication amplifier circuit 10.Can the communication amplifier circuit 10 that signal carries out power amplification be comprised: an input circuit 12 is used to import an input signal; One output circuit 14 is used for the output signal after power output is amplified; One ground connection bias circuit 16 is used to provide ground connection (ground) bias voltage; And at least one amplifying unit 18, be used for the power of input signal is suitably amplified.Comprise a bipolar junction transistor (BJT) 20 in each amplifying unit 18, be used for receiving inputted signal and produce the output signal of power amplification, and diode 22, be used to guide the electric current of the reverse flow that ground connection bias circuit 16 produced, destroy bipolar junction transistor 20 with the electric current that prevents this reverse flow.Input signal transfers to the base stage 28 of bipolar junction transistor 20 via first resistance 24.The emitter 30 of bipolar junction transistor 18 can be connected with ground connection bias circuit 16 by second resistance 26, and by the signal after the collection utmost point 32 power outputs amplification of bipolar junction transistor 20.The operative scenario of known communication amplifier circuit 10 is described below, input circuit 12 receives an input signal, then through first resistance 22 and the base stage 28 of feed-in bipolar junction transistor 20, signal through bipolar junction transistor 20 common emitters amplifies configuration, signal after this power amplification then exports output circuit 14 to by the collection utmost point 32 of bipolar junction transistor 20, wherein diode 22, be used to guide the electric current of the reverse flow that is produced by ground connection bias circuit 16, flow into the emitter 28 of bipolar junction transistor 20 and destroy the structure of bipolar junction transistor 20 with the electric current that prevents this reverse flow.
Please refer to Fig. 1 and Fig. 2, Fig. 2 is circuit layout (layout) schematic diagram of the known communication amplifier circuit 10 of Fig. 1.Bipolar junction transistor 18 comprises a base stage conduction region 34 (being the base stage 28 among Fig. 1), an emitter conduction region 36 (being the emitter 30 among Fig. 1) and a collection utmost point conduction region 38 (being the collection utmost point 32 among Fig. 1).Diode 22 comprises an anode contact 40 and a cathode contact 42, is connected with a ground connection bias circuit 16 and anode contact 40 is located on the central conduction region 44.Base stage conduction region 34 is electrically connected with diode 22 via one first resistive layer 46 (being first resistance 24 among Fig. 1), and emitter conduction region 36 is via second resistive layer 48 (being second resistance 26 among Fig. 1) and central conduction region 44 and be electrically connected with diode 22.
By among Fig. 1 as can be known, when ground connection bias circuit 16 produced the electric current of a reverse flow, diode 22 can conductings and guide the electric current of this reverse flow, prevent that further the electric current of excessive reverse flow from flowing into emitter 26 and destroying bipolar junction transistor 20.Yet, because in the structure of known communication amplifier circuit 10, as shown in Figure 2, the anode contact 40 of diode 22 and cathode contact 42 are between the two except meeting forms a pressure drop, also can produce corresponding electromagnetic interference to communication amplifier circuit 10 because of the position difference on both spaces, therefore cause bipolar junction transistor 20 in the process of amplifying signal, also the spurious signal that electromagnetic interference produced can be coupled in the output signal, the output number of reading is blured and the quality of reduction received signal.In addition, when the electric current of reverse flow surpasses the load of diode 22, not only reduce the defencive function of 22 pairs of bipolar junction transistors 20 of diode, more can impact and influence the work of communication amplifier circuit 10 bipolar junction transistor 20.
Summary of the invention
Therefore main purpose of the present invention provides a kind of protective circuit of diode that prevents and produces the radio-frequency (RF) communication amplifier circuit of electromagnetic interference.
Claim of the present invention provides a kind of communication amplifier circuit, be used for an input signal is carried out power amplification and produces the output signal of a correspondence, and this communication amplifier circuit comprises: a ground connection bias circuit is used to provide the bias voltage of this communication amplifier circuit ground connection; And at least one amplifying unit, and each amplifying unit all comprises a bipolar junction transistor; And a diode, be used to guide the electric current of this ground connection bias circuit reverse flow, destroy this transistor with the electric current that prevents this reverse flow.Each bipolar junction transistor comprises: a base stage conduction region is used to receive this input signal; One emitter conduction region is located at the outside of this base stage conduction region; Wherein this emitter conduction region is connected in this ground connection bias circuit via a central conduction region; And a collection utmost point conduction region, be located at the outside of this emitter conduction region, be used to produce this output signal.Each diode comprises: an anode contact, be located on this central authorities' conduction region, and be used for the anode of this diode is connected in this ground connection bias circuit; And two cathode contact, be located at the left and right sides of this central authorities' conduction region respectively, be used for the electric current of output stream through this diode.Because two cathode contact are with respect to this central authorities' conduction region symmetry, and make the caused electronic jamming of electric current of these diode symmetry two cathode contact of flowing through be cancelled each other and reduce.
Description of drawings
Fig. 1 is the circuit diagram of known communication amplifier circuit.
Fig. 2 is the circuit layout schematic diagram of known communication amplifier circuit shown in Figure 1.
Fig. 3 is the circuit diagram of communication amplifier circuit of the present invention.
Fig. 4 is the circuit layout schematic diagram of communication amplifier circuit of the present invention shown in Figure 3.The symbol description of accompanying drawing
50 communication amplifier circuits, 52 input circuits
54 output circuits, 56 ground connection bias circuits
58 amplifying units, 60 bipolar junction transistors
61,62 diodes, 64 first resistance
66 second resistance, 68 base stages
70 emitters, the 72 collection utmost points
74 base stage conduction regions, 76 emitter conduction regions
78 base stage conduction regions, 80 anode contacts
81,82 cathode contact, 84 central conduction regions
86 first resistive layers, 88 second resistive layers
90 connect conduction region
Embodiment
See also Fig. 3, Fig. 3 is the circuit diagram of communication amplifier circuit 50 of the present invention., the communication amplifier circuit 50 that is used for signal is amplified its power comprises: an input circuit 52, an output circuit 54, a ground connection bias circuit 56, and at least one amplifying unit 58.Note that under the situation that does not influence the exposure of the technology of the present invention content, only illustrate in the present embodiment with an amplifying unit 58.Comprise in the amplifying unit 58: a bipolar junction transistor 60 and two diodes 61,62, and diode 61 is identical with diode 62.Input signal transfers to the base stage 68 of bipolar junction transistor 60 via first resistance 64, and the emitter 70 of bipolar junction transistor 68 can be connected with ground connection bias circuit 56 by second resistance 66, and by the signal after the collection utmost point 72 power outputs amplification of bipolar junction transistor 60.The operative scenario of communication amplifier circuit 50 of the present invention is described below, input circuit 52 receiving inputted signals, base stage 78 through first resistance, 62 feed-in bipolar junction transistors 60, signal through bipolar junction transistor 60 common emitters amplifies configuration, signal after the amplification then exports output circuit 54 to by the collection utmost point 72 of bipolar junction transistor 60, and when ground connection bias circuit 56 produces the electric current of reverse flow, diode 61,62 can conductings and guide the electric current of this reverse flow, flow into emitter 68 and destroy bipolar junction transistor 60 with the electric current that prevents excessive reverse flow.
Please refer to Fig. 3 and Fig. 4, Fig. 4 is the circuit layout schematic diagram of Fig. 3 communication amplifier circuit 50 of the present invention.Bipolar junction transistor 60 comprises: a base stage conduction region 74 (being the base stage 68 among Fig. 3) is used for receiving inputted signal; One emitter conduction region 76 (being the emitter 70 among Fig. 3) is located at the outside of base stage conduction region 74; And a collection utmost point conduction region 78 (being the collection utmost point 32 among Fig. 3) are located at the outside of emitter conduction region 76, in addition, emitter conduction region 76 is connected in ground connection bias circuit 56 via a central conduction region 84, and should central authorities' conduction region 84 be with the formed left-right symmetric structure of a metal level.Diode 61,62 constitutes by an anode contact 80 and two cathode contact 81,82, wherein anode contact 80 constitutes diode 61 and anode contact 80 and cathode contact 82 formation diodes 62 with cathode contact 81, anode contact 80 is located on the central conduction region 84 and is connected with ground connection bias circuit 56, and two cathode contact 81,82 are located at the left and right sides of central conduction region 84 respectively in the symmetrical distribution mode, and, be used for the electric current of output stream through diode 61,62.Base stage conduction region 74 is electrically connected with diode 61,62 via first resistive layer 86 (being first resistance 64 among Fig. 3), and emitter conduction region 76 is via second resistive layer 88 (being second resistance 66 among Fig. 3) and central conduction region 84 and be connected with the anode contact 80 of diode 61,62.In addition, also comprise a connection conduction region 90 in the diode 61,62 and be connected, be used to make the base stage conduction region to be electrically connected with two cathode contact 81,82 via first resistance 86 with first resistance 86.When ground connection bias circuit 56 produces the electric current of reverse flows, diode 61,62 the conductings simultaneously and electric current of this reverse flow is flowed in the diode 61,62, and this electric current can be via 80 inputs of anode contact and by cathode contact 81,82 outputs.Produce the electric current that pressure drop guides this reverse flow owing to anode contact 80 and 81 of cathode contact and anode contact 80 and 82 conductings simultaneously of cathode contact respectively and flow the structure that this emitter conduction region 76 destroys bipolar junction transistor 60 with the electric current that prevents this reverse flow; therefore protect communication amplifier circuit 50 of the present invention to avoid damaging further; and and because cathode contact 81; 82 is a symmetrical distributed architecture; therefore anode contact 80 and 81 of cathode contact and anode contact 80 and cathode contact are 82; because current lead-through the electromagnetic interference that produces separately can cancel out each other and reduce the influence degree of electromagnetic interference simultaneously output signal, thereby can significantly improve mobile phone received signal quality.In addition; communication amplifier circuit 50 of the present invention utilizes two diodes 61,62 to protect two junction transistors 60 that carried; therefore can increase current capacity (currentcapacity); make electric current that diode 61,62 can the more reverse flow of conductings and improve the function of its protection bipolar junction transistor 60, make communication amplifier circuit 50 not be subjected to the current affects of reverse flow further and more stably work.
In the present embodiment, communication amplifier circuit 50 also can be applicable to other radio communications sets except can be applicable to mobile phone.
Compare with known technology; communication amplifier circuit of the present invention uses the diode structure that is symmetrically distributed; make the electromagnetic interference that is produced between diode anode and the negative electrode thereby offset minimizing; so input signal can be in the process of power amplification; be subjected to the electromagnetic interference effect that protective circuit of diode produces; therefore communication amplifier circuit of the present invention can make the output signal can be not smudgy because of the electromagnetic interference effect that protective circuit of diode produced, and can improve the ability to bear to the electric current of reverse flow.
The above only is the preferred embodiments of the present invention, and all equivalences of doing according to claim of the present invention change and improve the covering scope that all should belong to patent of the present invention.
Claims (6)
1. a communication amplifier circuit is used for an input signal is carried out power amplification and produces corresponding output signal, and this communication amplifier circuit comprises:
One bias circuit is used to provide the bias voltage of this communication amplifier circuit ground connection;
At least one amplifying unit, each amplifying unit comprises:
A bipolar junction transistor, it comprises:
One base stage conduction region is used to receive this input signal;
One emitter conduction region is located at the outside of this base stage conduction region, and wherein this emitter conduction region is connected to this bias circuit via a central conduction region; And
One collects utmost point conduction region, is located at the outside of this emitter conduction region, is used to produce this output signal; And
A diode is used to guide the electric current of this bias circuit reverse flow, flow to this emitter conduction region with the electric current that prevents this reverse flow and destroys this transistor;
This diode comprises:
One anode contact is located on this central authorities' conduction region, is used for the anode of this diode is connected in this bias circuit; And
Two cathode contact are located at the left and right sides of this central authorities' conduction region respectively, are used for the electric current of output stream through this diode;
Wherein this two cathode contact is for this central authorities' conduction region symmetry, so that the caused electronic jamming of electric current of these diode symmetry two cathode contact of flowing through is cancelled each other and reduced.
2. as the communication amplifier circuit of the 1st of claim, it is used for a mobile phone.
3. communication amplifier circuit as claimed in claim 1 wherein should form with a metal level by central authorities' conduction region.
4. communication amplifier circuit as claimed in claim 1, wherein should central authorities' conduction region and this emitter conduction region between also comprise a resistance area.
5. communication amplifier circuit as claimed in claim 1, wherein this diode also comprises one and connects conduction region, is used for this base stage conduction region is connected in this two polar contact.
6. communication amplifier circuit as claimed in claim 1 wherein should central authorities' conduction region left-right symmetric.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011385898A CN1170362C (en) | 2001-11-19 | 2001-11-19 | RF communication amplifier circuit capable of preventing diode protection circuit from generating electromagnetic interference |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011385898A CN1170362C (en) | 2001-11-19 | 2001-11-19 | RF communication amplifier circuit capable of preventing diode protection circuit from generating electromagnetic interference |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1420627A true CN1420627A (en) | 2003-05-28 |
| CN1170362C CN1170362C (en) | 2004-10-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011385898A Expired - Fee Related CN1170362C (en) | 2001-11-19 | 2001-11-19 | RF communication amplifier circuit capable of preventing diode protection circuit from generating electromagnetic interference |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1170362C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1956319B (en) * | 2005-10-04 | 2010-12-15 | 恩益禧电子股份有限公司 | High frequency power amplifier and radio communication device |
| CN106301261A (en) * | 2016-09-23 | 2017-01-04 | 四川万康节能环保科技有限公司 | A kind of air purifier air exhauster drive system electromagnetism interference type amplifying circuit |
| CN106301262A (en) * | 2016-09-23 | 2017-01-04 | 四川万康节能环保科技有限公司 | A kind of air exhauster drive system linear amplifier circuit of air purifier |
-
2001
- 2001-11-19 CN CNB011385898A patent/CN1170362C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1956319B (en) * | 2005-10-04 | 2010-12-15 | 恩益禧电子股份有限公司 | High frequency power amplifier and radio communication device |
| CN106301261A (en) * | 2016-09-23 | 2017-01-04 | 四川万康节能环保科技有限公司 | A kind of air purifier air exhauster drive system electromagnetism interference type amplifying circuit |
| CN106301262A (en) * | 2016-09-23 | 2017-01-04 | 四川万康节能环保科技有限公司 | A kind of air exhauster drive system linear amplifier circuit of air purifier |
| CN106301262B (en) * | 2016-09-23 | 2019-07-05 | 上海世谛集成电路设计有限公司 | A kind of exhaust fan drive system linear amplifier circuit of air purifier |
| CN106301261B (en) * | 2016-09-23 | 2020-07-03 | 安徽山水城市设计有限公司 | Anti-electromagnetic interference amplification circuit for air purifier exhaust fan driving system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1170362C (en) | 2004-10-06 |
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