CN1397486A - B 0.4-0.6 C 0.1-0.3 N 0.1-0.3 compound with random graphite structure and its chemically preparing process - Google Patents
B 0.4-0.6 C 0.1-0.3 N 0.1-0.3 compound with random graphite structure and its chemically preparing process Download PDFInfo
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- CN1397486A CN1397486A CN 02104857 CN02104857A CN1397486A CN 1397486 A CN1397486 A CN 1397486A CN 02104857 CN02104857 CN 02104857 CN 02104857 A CN02104857 A CN 02104857A CN 1397486 A CN1397486 A CN 1397486A
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- compound
- boron content
- high boron
- precursor
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Abstract
A compound B0.4-0.6C0.1-0.3 with randow graphits structure contains B (40-60%), C (10-30%) and N (10-30 %). Its preparing process is also disclosed. It can be used to prepare the precursor of high-B BCN crystal or as the target for prepare function film.
Description
The present invention relates to a kind of random graphits structure B
0.4～0.6C
0.1～0.3N
0.1～0.3Compound and preparation thereof
Technical field.
The crystalline structure of C and BN, lattice parameter and phase transformation law are similar, and their some physical properties has great difference.Graphite is a kind of semi-metal of black, and hexagonal boron nitride (h-BN) is the isolator of white.Therefore, people expect that these two kinds of materials can form the B-C-N ternary compound, have good semiconducting behavior.Liu
[1]Adopt the first principle pseudopotential method to carry out Theoretical Calculation Deng the people in 1989, propose three kinds of possible BC
2N plane atomic arrangement structure model is pointed out the BC of inverting symmetrical structure
2N has metallic character, and have high cohesion can BC
2N does not have the inverting symmetrical structure, presents characteristic of semiconductor.This theoretical prediction has attracted the research group of many countries to be engaged in the theory and the experimental study of the synthetic and characteristic aspect of B-C-N material.Further Theoretical Calculation shows that the B-C-N material also may have physical propertys such as many special optics, calorifics, electronics, thereby makes the synthetic of B-C-N novel material become one of international material scientific research most active fields with sign.
Methods such as in recent years, people choose various raw material, and applied chemistry vapour deposition (CVD), physical vapor deposition, High Temperature High Pressure, impact are synthetic have prepared various composition BC
xThe compound of N (x=1～7), and the B of high boron content
xThe synthetic of CN compound do not appear in the newspapers.
The object of the present invention is to provide a kind of high boron content B
0.4～0.6C
0.1～0.3N
0.1～0.3Compound and chemical preparation process thereof, this compound can be used as synthetic high boron content B
0.4～0.6C
0.1～0.3N
0.1～0.3Crystalline precursor and preparation high boron content B
0.4～0.6C
0.1～0.3N
0.1～0.3The target that function film is used, preparation technology of the present invention is simple, and the purity of synthetic product is higher, can produce in batches.
This random graphits structure high boron content B
0.4～0.6C
0.1～0.3N
0.1～0.3Compound is characterized in that: chemical ingredients is: B40～60%, C10-30%, N10-30%, and institute's synthetic compound has random graphits structure; Its chemical preparation process is: trimeric cyanamide and boric acid are dissolved in the ebullient distilled water form solution, make the abundant chemical combination of trimeric cyanamide and boric acid; Again moisture is sloughed in the solution heating, obtained containing the B-C-N precursor of H, O; Then this precursor is put into crucible, under vacuum or mobile protection of inert gas, be warmed up to 1500～1800 ℃ and carry out pyroprocessing, can obtain high boron content B
0.4～0.6C
0.1～0.3N
0.1～0.3Compound; Said rare gas element is nitrogen, also can is argon gas.
Embodiment
Embodiment: trimeric cyanamide and boric acid are prepared in 2: 1 ratios; dissolve in the ebullient distilled water; again moisture is sloughed in the solution heating; obtain containing the B-C-N precursor of H, O; then this precursor is put into alumina crucible; be warmed up to 1600 ℃ in resistance furnace and carry out pyroprocessing under the flowing nitrogen protection, can obtain composition is B
2The random graphits structure compound of CN.
The multilayer film that adopts this target of physical vapor deposition sputter to obtain can prepare multiple semiconducter device such as semiconductor light-emitting-diode, semiconductor laser, solar cell, as: during traditional solar cell is made, wavelength place in Si band gap correspondence, the energy density of sunlight is very low, yet, by adopting wide energy gap semiconductor B
0.4～0.6C
0.1～0.3N
0.1～0.3The light absorbing zone of compound formation solar cell can improve the efficiency of conversion of battery.
Compare with methods such as chemical vapour deposition (CVD), physical vapour deposition (PVD), impact are synthetic, characteristics of the present invention are as follows:
1, the B of melamine and boric acid hydrolysis chemical combination after heat solution preparation0.4～0.6C
0.1～0.3N
0.1～0.3Chemical combination The thing boron content is higher, and this is the remarkable difference of the present invention and other method.
2, B
0.4～0.6C
0.1～0.3N
0.1～0.3Compound has random graphits structure.
3, trimeric cyanamide and boric acid are dissolved in the ebullient distilled water form solution, make the abundant chemical combination of trimeric cyanamide and boric acid.
4, can obtain the B of heterogeneity by control proportioning raw materials and processing parameter
0.4～0.6C
0.1～0.3N
0.1～0.3Compound.
5, preparation technology of the present invention is simple, and the purity of synthetic product is higher, can produce in batches.
Claims (3)
1, a kind of random graphits structure high boron content B
0.4～0.6C
0.1～0.3N
0.1～0.3Compound is characterized in that: chemical ingredients is: B 40～60%, C 10-30%, N 10-30%, institute's synthetic compound has random graphits structure.
2, the described random graphits structure high boron content of claim 1 B
0.4～0.6C
0.1～0.3N
0.1～0.3The chemical preparation process of compound is characterized in that: trimeric cyanamide and boric acid are dissolved in the ebullient distilled water form solution, make the abundant chemical combination of trimeric cyanamide and boric acid; Again moisture is sloughed in the solution heating, obtained containing the B-C-N precursor of H, O; Then this precursor is put into crucible, under vacuum or mobile protection of inert gas, be warmed up to and carry out pyroprocessing more than 1500 ℃, can obtain high boron content B
0.4～0.6C
0.1～0.3N
0.1～0.3Compound.
3, the described random graphits structure high boron content of claim 2 B
0.4～0.6C
0.1～0.3N
0.1～0.3The chemical preparation process of compound is characterized in that: said rare gas element is nitrogen, also can is argon gas.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02104857 CN1397486A (en) | 2002-02-15 | 2002-02-15 | B 0.4-0.6 C 0.1-0.3 N 0.1-0.3 compound with random graphite structure and its chemically preparing process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02104857 CN1397486A (en) | 2002-02-15 | 2002-02-15 | B 0.4-0.6 C 0.1-0.3 N 0.1-0.3 compound with random graphite structure and its chemically preparing process |
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|---|---|
| CN1397486A true CN1397486A (en) | 2003-02-19 |
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|---|---|---|---|
| CN 02104857 Pending CN1397486A (en) | 2002-02-15 | 2002-02-15 | B 0.4-0.6 C 0.1-0.3 N 0.1-0.3 compound with random graphite structure and its chemically preparing process |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103721738A (en) * | 2014-01-07 | 2014-04-16 | 福州大学 | Non-metallic photocatalytic material for efficient reduction of carbon dioxide |
| CN103721737A (en) * | 2014-01-07 | 2014-04-16 | 福州大学 | Non-metallic material for driving photocatalytic decomposition of water by using efficient visible light |
| CN105880629A (en) * | 2016-05-24 | 2016-08-24 | 江苏大学 | Preparation method for boron carbonitride nanosheet loaded metal nano particle hybrid material |
| CN106556898A (en) * | 2015-09-25 | 2017-04-05 | 国网辽宁省电力有限公司本溪供电公司 | A kind of optical cable insulating fire resistant coating spraying coating process |
| CN107117589A (en) * | 2017-05-25 | 2017-09-01 | 华侨大学 | A kind of high specific capacitance (BC) xNyOz materials and its synthetic method |
-
2002
- 2002-02-15 CN CN 02104857 patent/CN1397486A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103721738A (en) * | 2014-01-07 | 2014-04-16 | 福州大学 | Non-metallic photocatalytic material for efficient reduction of carbon dioxide |
| CN103721737A (en) * | 2014-01-07 | 2014-04-16 | 福州大学 | Non-metallic material for driving photocatalytic decomposition of water by using efficient visible light |
| CN103721737B (en) * | 2014-01-07 | 2015-10-21 | 福州大学 | A kind of efficient visible light drives the nonmetallic materials of catalytic decomposition water |
| CN103721738B (en) * | 2014-01-07 | 2015-10-21 | 福州大学 | A kind of non-metal optical catalysis material of efficient reducing carbon dioxide |
| CN106556898A (en) * | 2015-09-25 | 2017-04-05 | 国网辽宁省电力有限公司本溪供电公司 | A kind of optical cable insulating fire resistant coating spraying coating process |
| CN105880629A (en) * | 2016-05-24 | 2016-08-24 | 江苏大学 | Preparation method for boron carbonitride nanosheet loaded metal nano particle hybrid material |
| CN105880629B (en) * | 2016-05-24 | 2018-08-21 | 江苏大学 | A kind of preparation method of the metal nanoparticles loaded hybrid material of boron carbon nitrogen nanometer sheet |
| CN107117589A (en) * | 2017-05-25 | 2017-09-01 | 华侨大学 | A kind of high specific capacitance (BC) xNyOz materials and its synthetic method |
| CN107117589B (en) * | 2017-05-25 | 2019-03-12 | 华侨大学 | A kind of high specific capacitance (BC) xNyOz material and its synthetic method |
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