CN1386043A - Deposition method for IC copper inner conductive wire inculating crystal layer - Google Patents
Deposition method for IC copper inner conductive wire inculating crystal layer Download PDFInfo
- Publication number
- CN1386043A CN1386043A CN 01116074 CN01116074A CN1386043A CN 1386043 A CN1386043 A CN 1386043A CN 01116074 CN01116074 CN 01116074 CN 01116074 A CN01116074 A CN 01116074A CN 1386043 A CN1386043 A CN 1386043A
- Authority
- CN
- China
- Prior art keywords
- ion
- palladium
- conductive wire
- crystal layer
- inner conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
This invention relates to a deposition method of copper internal connection wire on crystal seed layer of IC in the way of plating substitution which is to deposit a thin metal layer on microprocessed groove or hole to electroplate with a solution containing additoin agent to deposit conductors on it, forming internal or outer metal conductant wire structure to overcome the shortcoming of traditional physical or chemical deposition on high cost.
Description
The invention relates to a kind of deposition process at IC copper inner conductive wire inculating crystal layer.That is via the catalysis of substitutional solution, directly in the enterprising line replacement plating of barrier layer to deposit a metal level, to replace the method for native copper crystal seed layer.And in displacement plating back execution copper galvanizing process, to make time copper internal connection-wire structure of micron.
In order to cooperate the integrated circuit that volume is littler, usefulness is higher, the making of intraconnections must reach the requirement of deep-sub-micrometer.Yet because of character such as resistance and electromigration resistance, employed aluminum metal no longer has absolute advantage in conventional process.Relative, the copper metal then has low resistance, higher melting point and preferable advantages such as electromigration resistance, and the problem that originally can't use the shortcoming of dry-etching processing procedure and be diffused into oxide layer has also overcome by the exploitation of damascene technology and the research and development of retaining layer material, can say to be regarded as next optimisation substance of IC intraconnections from generation to generation.
At present, copper metal deposition processing procedure all is considerable processing procedure in integrated circuit or printed circuit board industry, particularly on the fine circuit of high-aspect-ratio.Using copper in the research integrated circuit now is in the technology of intraconnections, roughly uses following several modes to come the deposited copper metal: sputter, physical vapour deposition (PVD), chemical vapour deposition (CVD) or electrochemical deposition etc.
Wherein, physical vapour deposition (PVD) on the problem that opening is sealed, has arrived difficult stage.Chemical vapour deposition (CVD) produces non-volatile CuCl in copper wiring
2Solid can't form steam under the production temperature environment, become a difficult problem anxious to be overcome.Therefore must otherwise carry out with the copper wire replacement aluminum steel road of high conduction.
With the galvanoplastic copper layer, disclose chloride ion and the additive 0.4% of the cupric sulfate pentahydrate that contains 12 ounces/gallon water in its plating bath, 10% concentrated sulfuric acid, 50ppm for No. 5256274 at United States Patent (USP).And the research and development of IBM Corporation through going beyond what is acceptable or necessary 10 years will also announce successfully with electrochemical deposition method at the copper circuit of finishing on the IC wafer below the 0.25 μ m in the end of the year 1997.So far, the advantage of copper metal plating is admitted by semiconductor circle.
Before with the plating mode copper layer, must on Silicon Wafer, deposit the crystal seed layer film of last layer diffused barrier layer and copper metal earlier earlier in the mode of sputter or chemical vapour deposition (CVD).The material of diffused barrier layer is many at present based on titanium nitride (TiN) or tantalum nitride (TaN), and its purpose is mainly in the diffusion that stops between copper metal and the dielectric layer silicon dioxide.The usefulness of conduction when the copper crystal seed layer then is the conduct plating.
In the academic research of displacement reaction, (THEELECTROCHEMCIAL SOCIETY 144 P.898-908 for people such as Yosi Shacham-Diamand in 1997,1997) prescription with solution wet type activation titanium nitride surface was once proposed, to produce one deck Cu layer, as electroplating or electroless crystal seed layer, PVD or the CVD method that so can remove from costliness prepare crystal seed layer.And on industrial research, then have US business's International Business Machines Corporation to propose to activate the titanium nitride surface with the solution of hydrofluoric acid containing and copper sulphate, make it to replace the method that plates the layer of copper crystal seed layer.This method has detailed explanation in No. the 86119270th, Chinese patent application.
Utilize the mode of displacement plating, mode at barrier layer materials surface deposition last layer metal level, disclose for No. 4574095 with light-struck mode catalytic reaction at United States Patent (USP), palladium metal deposition on silicon substrate, is imposed follow-up electroless plating processing procedure deposition again and goes up the copper metal.
The mode that Wong also once disclosed with the displacement plating for No. 5358907 in United States Patent (USP), can with the metal deposition of each family such as IB, IIB, IIIA, IVB, VB, VIB, VIIB or VIIIB on silicon substrate or siliceous compound, contain hydrofluoric acid (HF) in its replacement liquid prescription.
People such as Valery M.Dubin then disclose for No. 5891513 and the method for displacement plating can be used on the integrated circuit in United States Patent (USP), this patent mentions that the solution with the interfacial agent of fluorine ion that contains 0.001-2.0mol/l copper ion, 0.001-5.0mol/l and 0.01-10mg/l can then impose electroless plating to increase the thickness of copper layer again at the crystal seed layer that deposits copper on the titanium nitride base material.
As everyone knows, electroplate a kind of into electrochemical deposition method, its principle be applied voltage to cause anode and cathode, produce other electrochemistry half-reaction.Anode generation oxidation reaction wherein, negative electrode then produces reduction reaction, and also the ion in the ie in solution is reduced into atomic state and is plated on polar board surface.Method now promptly is to use this kind principle to make copper intraconnections, to connect the element of integrated circuit each several part.Traditional plating fabrication schedule such as Fig. 1-shown in Figure 7.
Among Fig. 1,1 is initial base material, that is Silicon Wafer itself.2 and 4 is the nitration case of silicon, that is silicon nitride (SiN), and 3 are the dielectric layer through being produced behind the heat treatment process, that is the oxide of silicon that is silicon dioxide.
Among Fig. 28 be in response on whole the integrated circuit configuration need be with the design light shield, and the photoresistance that is coated with in substrate surface.
For through resulting figure after the lithography program, can find that part dielectric layer and nitration case all are removed among Fig. 3, the last removing photoresistance 8 that also removes.
Then deposit one deck diffusion barrier layer material 5 among Fig. 4 on dielectric layer 4, as titanium nitride (TiN), tantalum nitride (TaN) or tantalum (Ta), its function diffuses in the dielectric layer 4 in back segment heat treatment processing procedure for preventing the copper layer, and influences the transmission of intraconnections.
Be to utilize the physical vapor deposition (PVD) or the mode of chemical vapor deposition (CVD) to plate the copper crystal seed layer 6 of one deck among Fig. 5, with as the required conductive layer of follow-up plating.
For utilizing the copper crystal seed layer conduction that has deposited, with plating mode the copper layer is filled up in groove or the hole among Fig. 6,7 is the copper metal layer that utilizes this mode to plate.
Fig. 7 is the substrate passed last complanation and cmp program, throws the material on outstanding top layer flat.
The step that repeats the above Fig. 1-Fig. 7 then can produce the copper interconnects structure of multilayer.The major defect of said method is:
Because via the mode deposited copper crystal seed layer of physics or chemical vapour deposition (CVD) usefulness as conduction, must be on vacuum equipment the both expensive expense, program is complexity comparatively, manufacturing cost is higher.
Main purpose of the present invention is to provide a kind of deposition process of IC copper inner conductive wire inculating crystal layer, by with displacement plating mode deposition of thin metal level in through in the groove or hole of micro-photographing process, electroplate or the electroless plating program via the solution that contains additive, with deposited conductor in wherein, form the metallic conducting wire structure of intraconnections or outside line, overcome the drawback of prior art, reach and make the purpose low-cost and line layout of the following micron-scale in the integrated circuit wafer.
The present invention's second purpose is to provide a kind of deposition process of IC copper inner conductive wire inculating crystal layer, by on integrated circuit, making the method for interconnection structure, be included in deposition formation insulation dielectric layer on the Silicon Wafer base material, and define and form lines or through hole in little shadow mode, and after the last barrier layer materials of deposition, this base material is immersed activated solution replace plating, with the deposition of thin metal level in the barrier layer surface, solution through containing interfacial agent with the electrochemical program deposited conductor in wherein, to form interconnection line, can form the metallic conducting wire structure of interconnection via complanation or cmp program at last.
The 3rd purpose of the present invention is to provide a kind of deposition process of IC copper inner conductive wire inculating crystal layer, by base material is deposited the layer of metal layer via the solution activation and in displacement plating mode, with as the required conductive layer of follow-up galvanizing process, and need not reach manufacturing cost that reduces integrated circuit and the purpose of saving the expensive expense on vacuum equipment via the mode deposited copper crystal seed layer of physics or chemical vapour deposition (CVD) usefulness as conduction.
The 4th purpose of the present invention is to provide a kind of deposition process of IC copper inner conductive wire inculating crystal layer, and the copper layer by even filling time micron circuit reaches the hole depth-to-width ratio greater than 1, the then little purpose to 0.2 μ m of the width of hole or circuit.
The object of the present invention is achieved like this: a kind of deposition process of IC copper inner conductive wire inculating crystal layer, and the crystal seed layer on this deposition is as conductive layer required when electroplate filling micropore, and it is characterized in that: it comprises the steps:
(1) equipped earlier displacement plating bath, it comprises palladium ion compound 0.2-20g/l, halide ion compound 0.6-60g/l, inorganic acid 0.09-9g/l and/or interfacial agent 10-1000ppm;
(2) base material that will deposit barrier layer materials soaks and placed among the displacement plating bath 1-20 minute, and pH value of this displacement plating bath is between 1-7.0, and temperature is between 20-70 ℃.
This palladium ion compound is halogenation palladium, palladium nitrate, palladium sulfate, crosses chloric acid palladium or palladium.This halogenation palladium is palladium bichloride, palladium bromide or palladium iodide.This halide ion compound is the compound that contains fluorine ion, chloride ion, bromide ion or iodide ion, and it derives from hydrogen halides or its ionic compound that combines with IA or IIA family metal ion.This inorganic acid is nitric acid, sulfuric acid, hydrofluoric acid, hydrochloric acid, hydrobromic acid or hydroiodic acid or crosses chloric acid.This interfacial agent is the copolymer of polyethylene glycol, polypropylene glycol or ethylene glycol/propylene glycol.This barrier layer is tantalum nitride or titanium nitride.
A kind of deposition process of IC copper inner conductive wire inculating crystal layer, the crystal seed layer on this deposition is as conductive layer required when electroplate filling micropore, and it is characterized in that: it comprises the steps:
(1) equipped earlier displacement plating bath, it comprises silver iron compound 0.2-20g/l, halide ion compound 0.6-60g/l, inorganic acid 0.09-9g/l and interfacial agent 10-1000ppm;
(2) base material that will deposit barrier layer materials soaks and placed among the displacement plating bath 1-20 minute, and pH value of this displacement plating bath is between 1-7.0, and temperature is between 20-70 ℃.
This silver iron compound is silver nitrate or crosses silver chlorate.
Further specify below in conjunction with preferred embodiment and accompanying drawing.
Fig. 1 goes up the schematic diagram of oxide and dielectric layer for traditional silicon wafer deposition.
Fig. 2 is the structural representation behind the photoresistance traditionally.
Fig. 3 is that tradition is through the structural representation behind the micro-photographing process.
Fig. 4 is the crystal circle structure schematic diagram behind the barrier layer on the conventional deposition.
Fig. 5 is the structural representation behind the copper crystal seed layer on the conventional deposition.
Fig. 6 is the hole schematic diagram of tradition with the full crystal column surface of copper filled with metal.
Fig. 7 is the structural representation of tradition through complanation.
Fig. 8 for palladium metal layer on the deposition of the present invention to replace the schematic diagram of copper crystal seed layer.
Fig. 9 is the Electronic Speculum figure that deposits the last layer palladium metal on the tantalum nitride base material of plane of the present invention.
Figure 10 is the Electronic Speculum figure that deposits the last layer palladium metal on the titanium nitride base material of plane of the present invention.
Figure 11 is the Electronic Speculum figure in titanium nitride surface deposition silver metal of the present invention.
Figure 12 is the Electronic Speculum figure of direct copper layer of the present invention in palladium/tantalum nitride/silicon substrate surface.
Figure 13 recharges the Electronic Speculum figure of micropore for interpolation interfacial agent of the present invention.
Consult Fig. 8-Figure 13, wherein Fig. 8 by among the present invention go up the step of crystal seed layer among the alternative Fig. 5 of proposition with the vacuum equipment deposition.The present invention proposes a kind of wet type activating recipe, barrier layer materials 5 tantalum nitrides or the titanium nitride that are deposited among Fig. 4 in order to activation, and make itself and solution metal ion generation displacement reaction.This prescription consist of palladium ion compound 0.2-20g/l, halide ion compound 0.6-60g/l, inorganic acid 0.9-9g/l and interfacial agent 10-1000ppm, for example: palladium bichloride is 1.77g/l, ammonium acid fluoride (NH
4FHF) be 5.7g/l, nitric acid is 0.63g/l.Its method placed for the base material that will deposit barrier layer materials soaks among the displacement plating bath 5 minutes, and this pH value of replacing plating bath is about about 4.5, and temperature is at 40 ℃.Palladium bichloride in the prescription is in order to provide the ion source of palladium metal, and ammonium acid fluoride is then for driving the important key of this reaction.In fact, ammonium acid fluoride itself is hydrofluoric cushioning liquid.In addition, because the solubility of palladium bichloride in the aqueous solution is not high, nitric acid can be in order to increasing the solubility of palladium bichloride, and the pH value of adjustment solution.
In invention, the displacement plating not only can be implemented on silicon substrate, all kinds of silicide or titanium nitride base material, also can implement on the tantalum nitride base material.And for for the barrier layer materials of copper wires, the reliability of tantalum nitride and chemical stability are better than the titanium nitride of column structure.This names a person for a particular job and helps the present invention in industrial application.
Fig. 9 shows the mode of palladium ion via the displacement plating, and the porpezite that deposits one deck densification belongs to plane tantalum nitride substrate surface.
In the present invention, in the solution composition of displacement plating, be not to have only copper ion to react with the titanium nitride base material, all can deposit in the titanium nitride substrate surface as palladium metal and silver metal via the mode of displacement plating, and as the required conductive layer of follow-up electroplating process.
Figure 11 is a silver metal via displacement plating mode, is deposited on the titanium nitride substrate surface on plane, the consisting of of this prescription: silver iron compound 0.2-20g/l, halide ion compound 0.6-60g/l, inorganic acid 0.9-9g/l and interfacial agent 10-1000ppm.
Moreover, in the present invention, in the solution composition of displacement plating, be not to use hydrofluoric acid with strong toxicity, can use ammonium acid fluoride, that is the cushioning liquid of hydrofluoric acid replaces; Even other halide ions all can be in order to the instead of hydrogen fluoric acid, to drive the displacement reaction between metal ion and base material.
Figure 10 is the catalysis of palladium metal via KI, and displacement reaction is taken place, and is deposited on the surface of titanium nitride base material.
The inventor thinks that barrier layer materials can react with the solution metal ion, participation reaction mainly due to halide ion, its overall reaction can be summarized the dimidiation reaction again, wherein oxidation reaction is that barrier layer materials (as tantalum nitride or titanium nitride) produces complex compound (complex) and ejected electron with halide ion, and the possible form of this complex compound is six halogenated titanium (TiX
6 -2Or six halogenation tantalum (TaX
6 -2) complex ion.In addition, the electronics of being emitted is just received by the solution metal ion, and makes the metal ion reduction become metallic atom, and is deposited on the base material.These metal ions include copper ion, silver ion and palladium ion, all belong to the element of high reduction potential, that is redox reaction very easily takes place this type of metal ion, and reduction becomes atomic state.So just, soluble, why quite high tantalum nitride and the titanium nitride of chemical stability can deposit metal ion via the mode of displacement plating.
After imposing the displacement plating on the barrier layer materials, just can be via electrochemical means, as electroplating or electroless plating, to deposit copper plate and to deepen its thickness.The inventor is in selecting the comparatively general plating mode of industrial application to carry out filling perforation herein.The basic recipe of electroplate liquid is: the anhydrous cupric sulfate of 75g/l, the sulfuric acid of 92g/l and 200ppm chloride ion.
Figure 12 is through after the displacement plating program, directly deposits copper plate in the surface of palladium/tantalum nitride/silicon substrate with galvanizing process.
Yet owing to the aperture of desire filling is minimum, approximately only below 1.0 microns, the wetability of plating bath is also very important.Therefore, in displacement plating bath and electroplate liquid, must add interfacial agent.
Additive aspect, No. the 4110176th, United States Patent (USP) disclose the poly-alkanol quarternary ammonium salt that can product forms, the copper layer that can deposit bright, low stress and be ductile in acid copper plating bath.And arrangement and tabular go out the additive of numerous species in No. 4975159, the United States Patent (USP).Include as lactams, have the sulfur compound and the organic compound three major types of the short dissolubility group of water via the alkyl oxidation.The present invention has selected polyvinyl alcohol as the additive in displacement plating and the electroplate liquid, and its effect is different fully with conventional art.
Figure 13 fills the schematic cross section of micropore gained again for after adding interfacial agent polyvinyl alcohol (PEG 5000) in the displacement plating bath with plating mode.
Aspect electroplating system, the present invention is reference with the device of R.J.Contolinii, and electroplating system is divided into electroplates major trough, circulated filter system, automatic control system three parts.Wherein electroplating major trough is a design cylindraceous, that cell body is divided into is interior, in, outer three layers, internal layer is the zone that solution is electroplated, cell body is 10 centimeters of diameters, have the cylinder of end uncovered in high 7.5 centimeters in vain, about 5 millimeters of wall thickness, at the bottom of one vertical channel arranged at the bottom of cell body, 1 centimeter of opening, high 5 millimeters fixing glass pipe join with outside pipeline, the pump housing and flowmeter, there is outside plating bath to enter the inlet of internal layer cell body, plating bath directly washes away negative electrode in this way, be a kind of jet flow design, in order to the matter biography effect of reinforcement metal ion.The middle level cell body is mainly overflow area and filtration channel, and bottom land is the extension of inside groove bottom land, and cell wall is high 11 centimeters.Outer cell body is enclosed design, and volume is about 1.8 liters, is coating internal layer and middle level groove.Cell wall is provided with low, high two openings, diameter is all 8 millimeters, is respectively the input and the delivery outlet of thermostat current, by the circulation of constant temperature current, can keep plating bath constant temperature, and plating work can be operated under constant temperature.
The design of whole electroplating bath provides the moon, the electroplanting device of anode, and can add reference electrode, thermometer, various sensors such as pH meter, and see through in addition temperature control of thermostat, the jet flow that adds the may command flow velocity stirs design, make most work all can carry out at electroplating bath, and secondary groove needn't be arranged again, the plating bath volume is about 1 liter in the coating bath, the design of columned cell body and on, the moon of following configuration, the rough geometry that is a symmetry of anode ornaments, its purpose is to make electric field and the Flow Field Distribution in the coating bath comparatively symmetrical, and the operating condition of experiment is comparatively simple.
Before plating bath enters coating bath,,, filter with 10 μ, 5 μ, 1 μ filtering element (cartridge) respectively again to remove organic impurities earlier through activated carbon treatment.One circulated filter system is arranged in electroplating process, mainly be made up of a pump housing and two filters, filtering element (cartridge) can filter 1 μ and 0.2 μ respectively, and filtering rate is 1.5L/min, to remove the fine particle in the plating bath.Automatic control system is made of potentiostat and the host computer that includes automatic experiment (Autolab) software.EG﹠amp; The 362 type potentiostats that G company is gone out can be supplied with the stable electric current of coating bath one, and are monitored and read data by automatic experiment (Autolab) software at any time.
Through experiment, the prescription of displacement plating of the present invention is formed and is comprised following optimization formula:
1, palladium bichloride 10g/l, sodium chloride 30g/l, nitric acid 4.5g/l and PEG400 ppm.
2, silver nitrate 12g/l, sodium chloride 35g/l, nitric acid 5.0g/l and polyethylene glycol 500ppm.
3, silver nitrate 15g/l, sodium chloride 40g/l, nitric acid 6.0g/l and polyethylene glycol/propylene glycol 600ppm.
Claims (12)
1, a kind of deposition process of IC copper inner conductive wire inculating crystal layer, the crystal seed layer on this deposition is as conductive layer required when electroplate filling micropore, and it is characterized in that: it comprises the steps:
(1) equipped earlier displacement plating bath, it comprises palladium ion compound 0.2-20g/l, halide ion compound 0.6-60g/l, inorganic acid 0.09-9g/l and/or interfacial agent 10-1000ppm;
(2) base material that will deposit barrier layer materials soaks and placed among the displacement plating bath 1-20 minute, and pH value of this displacement plating bath is between 1-7.0, and temperature is between 20-70 ℃.
2, the deposition process of IC copper inner conductive wire inculating crystal layer as claimed in claim 1 is characterized in that: this palladium ion compound is halogenation palladium, palladium nitrate, palladium sulfate, crosses chloric acid palladium or palladium.
3, the deposition process of IC copper inner conductive wire inculating crystal layer as claimed in claim 2 is characterized in that: this halogenation palladium is palladium bichloride, palladium bromide or palladium iodide.
4, the deposition process of IC copper inner conductive wire inculating crystal layer as claimed in claim 1, it is characterized in that: this halide ion compound is the compound that contains fluorine ion, chloride ion, bromide ion or iodide ion, and it derives from hydrogen halides or its ionic compound that combines with IA or IIA family metal ion.
5, the deposition process of IC copper inner conductive wire inculating crystal layer as claimed in claim 1 is characterized in that: this inorganic acid is nitric acid, sulfuric acid, hydrofluoric acid, hydrochloric acid, hydrobromic acid or hydroiodic acid or crosses chloric acid.
6, the deposition process of IC copper inner conductive wire inculating crystal layer as claimed in claim 1 is characterized in that: this interfacial agent is the copolymer of polyethylene glycol, polypropylene glycol or ethylene glycol/propylene glycol.
7, the deposition process of IC copper inner conductive wire inculating crystal layer as claimed in claim 1 is characterized in that: this barrier layer is tantalum nitride or titanium nitride.
8, a kind of deposition process of IC copper inner conductive wire inculating crystal layer, the crystal seed layer on this deposition is as conductive layer required when electroplate filling micropore, and it is characterized in that: it comprises the steps:
(1) equipped earlier displacement plating bath, it comprises silver iron compound 0.2-20g/l, halide ion compound 0.6-60g/l, inorganic acid 0.09-9g/l and interfacial agent 10-1000ppm;
(2) base material that will deposit barrier layer materials soaks and placed among the displacement plating bath 1-20 minute, and pH value of this displacement plating bath is between 1-7.0, and temperature is between 20-70 ℃.
9, the deposition process of IC copper inner conductive wire inculating crystal layer as claimed in claim 8 is characterized in that: this silver iron compound is silver nitrate or crosses silver chlorate.
10, the deposition process of IC copper inner conductive wire inculating crystal layer as claimed in claim 8, it is characterized in that: this halide ion compound is the compound that contains fluorine ion, chloride ion, bromide ion or iodide ion, and it derives from hydrogen halides or its ionic compound that combines with IA or IIA family metal ion.
11, the deposition process of IC copper inner conductive wire inculating crystal layer as claimed in claim 8 is characterized in that: this inorganic acid is nitric acid or crosses chloric acid.
12, the deposition process of IC copper inner conductive wire inculating crystal layer as claimed in claim 8 is characterized in that: this interfacial agent is the copolymer of polyethylene glycol, polypropylene glycol or ethylene glycol/propylene glycol.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01116074 CN1386043A (en) | 2001-05-14 | 2001-05-14 | Deposition method for IC copper inner conductive wire inculating crystal layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01116074 CN1386043A (en) | 2001-05-14 | 2001-05-14 | Deposition method for IC copper inner conductive wire inculating crystal layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1386043A true CN1386043A (en) | 2002-12-18 |
Family
ID=4662373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 01116074 Pending CN1386043A (en) | 2001-05-14 | 2001-05-14 | Deposition method for IC copper inner conductive wire inculating crystal layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1386043A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102574275A (en) * | 2009-10-06 | 2012-07-11 | 日本精细钢铁株式会社 | Fixed abrasive grain wire, process for producing the fixed abrasive grain wire, and abrasive grains for use in fixed abrasive grain wire |
| CN109427570A (en) * | 2017-08-30 | 2019-03-05 | Asm Ip控股有限公司 | Layer forming method |
| CN110670053A (en) * | 2019-10-18 | 2020-01-10 | 北京曙光航空电气有限责任公司 | Silver plating method for metal surface |
-
2001
- 2001-05-14 CN CN 01116074 patent/CN1386043A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102574275A (en) * | 2009-10-06 | 2012-07-11 | 日本精细钢铁株式会社 | Fixed abrasive grain wire, process for producing the fixed abrasive grain wire, and abrasive grains for use in fixed abrasive grain wire |
| CN109427570A (en) * | 2017-08-30 | 2019-03-05 | Asm Ip控股有限公司 | Layer forming method |
| CN109427570B (en) * | 2017-08-30 | 2024-04-12 | Asmip控股有限公司 | Layer forming method |
| CN110670053A (en) * | 2019-10-18 | 2020-01-10 | 北京曙光航空电气有限责任公司 | Silver plating method for metal surface |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6472023B1 (en) | Seed layer of copper interconnection via displacement | |
| Green | Gold electrodeposition for microelectronic, optoelectronic and microsystem applications | |
| US6908504B2 (en) | Electroless plating bath composition and method of using | |
| KR102509652B1 (en) | Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias | |
| CN1276994C (en) | Bath and method of electroless plating of silver on metal surfaces | |
| CN1327479C (en) | Method of manufacturing electronic device | |
| US7262504B2 (en) | Multiple stage electroless deposition of a metal layer | |
| JP5268215B2 (en) | Copper connection seed layer processing method and processing apparatus | |
| CN1554113A (en) | Planar metal electroprocessing | |
| US6897152B2 (en) | Copper bath composition for electroless and/or electrolytic filling of vias and trenches for integrated circuit fabrication | |
| JP5203602B2 (en) | Method for direct electroplating of copper onto a non-copper plateable layer | |
| US20040222100A1 (en) | Process and system for providing electrochemical processing solution with reduced oxygen and gas content | |
| US20020033342A1 (en) | Packaging deposition methods | |
| CN1524292A (en) | Apparatus and method of surface treatment for electrolytic and electroless plating of metals in integrated circuit manufacturing | |
| US20070125657A1 (en) | Method of direct plating of copper on a substrate structure | |
| CN1623228A (en) | Interconnect structures containing conductive electrolessly deposited etch stop layers, liner layers, and via plugs | |
| JP2007528932A (en) | Multi-step electrodeposition method for direct copper plating on barrier metal | |
| JP2008502806A (en) | Barrier layer surface treatment method enabling direct copper plating on barrier metal | |
| CN1484856A (en) | Interconnect structures and a method of electroless introduction of interconnect structures | |
| KR20020074195A (en) | Copper electroplating liquid, pretreatment liquid for copper electroplating and method of copper electroplating | |
| CN1337064A (en) | Method for galvanically forming conductor structures of high-purity copper in the production of integrated circuits | |
| EP1644557B1 (en) | Electrochemical processing cell | |
| WO2002063069A2 (en) | Methods and systems for electro-or electroless-plating of metal in high-aspect ratio features | |
| CN1386043A (en) | Deposition method for IC copper inner conductive wire inculating crystal layer | |
| US20050170650A1 (en) | Electroless palladium nitrate activation prior to cobalt-alloy deposition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |