CN1363853A - Process for preparing thin-film transistor LCD - Google Patents
Process for preparing thin-film transistor LCD Download PDFInfo
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- CN1363853A CN1363853A CN 01101328 CN01101328A CN1363853A CN 1363853 A CN1363853 A CN 1363853A CN 01101328 CN01101328 CN 01101328 CN 01101328 A CN01101328 A CN 01101328A CN 1363853 A CN1363853 A CN 1363853A
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Abstract
The invention relates to a method for manufacturing liquid crystal display of thin film transistor that is prepared on a base plate. There is a scanning wire and a signal wire perpendicular to the former on the base plate, but they are located in different planes. The method includes following procedures. A protection layer is formed on the upside of the base plate so as to cover the thin film transistors and signal wire. Pattern on the protection layer is restricted to that at least a hole for contacting the signal wire is formed on the protection layer positioned above the signal wire. A transparent conductive layer positioned above the wire and protection layer of formed, moreover the transparent conductive layer is able to fill the contacting hole. The pattern on the transparent conductive layer is restricted so that the layer is persisted on upside of point of intersencitive between signal wire and scanning wire.
Description
The present invention relates to a kind of Thin Film Transistor-LCD (thin film transistor liquid crystaldisplay, TFT-LCD) method for making, relate in particular to a kind of photoetching manufacturing process (photo-etching-process that utilizes five times, PEP) to make the method for TFT-LCD element, this TFT-LCD element has a standby intraconnections (redundant localized interconnection).
Flourish along with electronics and information industry, the range of application of flat-panel screens (plat panel display) and demand also constantly enlarge.Flat-panel screens type now mainly includes: LCD (liquid crystal display, LCD), plasma display (plasma display panel, PDP), electro-exciting light-emitting display (electro-luminescent display, ELD), Field Emission Display (field-emission display, FED), light emitting diode indicator (light emitting diode display, LED), vacuum fluorescent display (vacuum fluorescent display, VFD) or the like.
At present, Thin Film Transistor-LCD (TFT-LCD) major part all is to utilize into the thin film transistor (TFT) of rectangular arrangement, cooperates electronic components such as suitable electric capacity, switching pad to drive liquid crystal pixel, enriches beautiful figure with generation.Traditional liquid crystal display cells includes a transparency carrier (transparent substrate) basically, has thin film transistor (TFT), the pixel electrode (pixelelectrode) of an array, sweep trace (the scan line of vertical interlaced on it; Or gate line) and signal wire (data line; Or signal line), a filter (color filter substrate) and the liquid crystal material between transparency carrier and filter.Because TFT-LCD has that external form is frivolous, power consumption is few and advantage such as radiationless pollution, therefore be widely used on notebook computer (notebook), the personal digital assistant portable type information products such as (PDA), and the trend of the CRT monitor that replaces traditional desktop computer has been arranged.
See also Fig. 1, Fig. 1 is section layout (layout) synoptic diagram of existing Thin Film Transistor-LCD (to call TFT-LCD in the following text) 10.Existing TFT-LCD 10 is produced on the transparent glass substrate 11.As shown in Figure 1, the signal wire 14 that has at least one thin film transistor (TFT) 40, multi-strip scanning line 12 and many and sweep trace 12 vertical interlaceds on the surface of glass substrate 11.In TFT-LCD 10, each thin film transistor (TFT) 40 all is used for driving one by tin indium oxide (indium tin oxide, the pixel electrode 16 that ITO) is constituted.Thin film transistor (TFT) 40 is by grid 42, source electrode 43 and drains 44 and constitute.By the grid 42 that polysilicon constituted is to form simultaneously with sweep trace 12, source electrode 43 and drain 44 be respectively by one the contact hole (contact hole) 46 be electrically connected with signal wire 14 and pixel electrode 16.For convenience of description, other element among the TFT-LCD 10, for example electric capacity and extremely switching pad or the like are not shown among Fig. 1.
In order to prevent opening circuit of signal wire 14, existing method is when forming pixel electrode 16, forms standby (redundant) electrically conducting transparent layer conductor 30 overlapping with signal wire 14 above signal wire 14.The electrically conducting transparent layer conductor is an ITO lead 30, and is electrically connected with source electrode 43, drain electrode 44 and signal wire 14 by source electrode contact hole 46, drain electrode contact hole 48 and signal wire contact hole 52.Because among the existing TFT-LCD 10, signal wire 14 and sweep trace 12 are to be positioned at Different Plane, in other words, between signal wire 14 and the sweep trace 12 other middle layer are arranged still, for example semiconductor layer or insulation course.Therefore, in staggered place 32 common because physical features uneven easily the take place breaking phenomenas of signal wire 14 with sweep trace 12.Existing method is to utilize standby ITO lead 30 and signal wire 14 overlapping, and utilizes signal wire contact hole 52 to be electrically connected with lower layer signal line 14, can prevent when signal wire 14 in the staggered place 32 component failures that caused when breaking.
Yet the existing formed standby ITO lead 30 of method but causes point defect (point defect) or short circuit phenomenon owing to the filth that is produced in the manufacturing process is electrically connected with pixel electrode 16 easily, directly has influence on the yield of TFTLCD system 10.In Fig. 1, what dashed rectangle 50 was represented is to produce the most frequent zone of point defect among the TFT-LCD10, as from the foregoing, how to eliminate this point defect zone and has just become crucial problem in present making TFT-LCD 10 processes with the yield that promotes product.
Therefore, fundamental purpose of the present invention is to provide the method for making of a kind of TFT-LCD, dwindling the above-mentioned zone that easily causes point defect, and then improves the yield rate of making TFT-LCD.
For achieving the above object, the invention provides a kind of Thin Film Transistor-LCD (thin-film-transistor liquid-crystal-dispay, the method for making of intraconnections TFT-LCD) (interconnect).This thin film transistor (TFT) (TFT) is to be made on the substrate (substrate), include an one scan line (scan line) and a signal wire (signal line) on this substrate in addition, this signal wire is vertical with this sweep trace, and this sweep trace and this signal wire are to be positioned at Different Plane.This method for making includes the following step: form a protective seam (passivation layer) above this substrate, to be covered in this thin film transistor (TFT) and this signal wire; Limit the pattern of this protective seam, to the protective seam that is less than this signal wire top, form signal wire contact hole (contact hole); Above this signal wire and this protective seam, form a transparency conducting layer, and this transparency conducting layer can be inserted this signal wire contact hole; And the pattern that limits this transparency conducting layer, make this transparency conducting layer remain in the staggered signal of this sweep trace directly over.
Fig. 1 is the section layout synoptic diagram of existing TFT-LCD.
Fig. 2 is the section layout synoptic diagram of TFT-LCD of the present invention.
Fig. 3 is the diagrammatic cross-section of TFT-LCD of the present invention.
Fig. 4 A to Fig. 4 E is the method for making synoptic diagram of TFT-LCD of the present invention.
The symbol description of accompanying drawing
10,60 TFT-LCD, 11,61 glass substrates
12,62 sweep traces, 14,64 signal wires
16,72 pixel electrodes, 30 standby electrically conducting transparent layer conductors
32,81 interlaced area, 40,70 thin film transistor (TFT)s
42,90 grids, 43,94 source electrodes
44,96 drain electrodes, 46,86 source electrodes contact hole
48,85 drain electrode contact holes, 50,83 dashed rectangle
52,82 signal wires contact hole, 66 spare area ITO leads
91 insulation courses, 92 semiconductor layers
102 doped silicon layers, 104 second metal levels
106 protective seams
See also Fig. 2, Fig. 2 is the section layout synoptic diagram of TFT-LCD 60 of the present invention.Technology emphasis of the present invention for convenience of description, other element among the TFT-LCD 60, for example electric capacity and extremely switching pad or the like are not shown among Fig. 2.As shown in Figure 2, existing TFT-LCD 60 is produced on the transparent glass substrate 61.The signal wire 64 that has at least one thin film transistor (TFT) 70, multi-strip scanning line 62 and many and sweep trace 62 vertical interlaceds on the glass substrate 61.In TFT-LCD 60, each thin film transistor (TFT) 70 all is used for driving a pixel electrode 72 that is made of tin indium oxide (ITO).In interlaced area 81 tops of signal wire 64 and sweep trace 62, be covered with a standby electrically conducting transparent layer conductor.This electrically conducting transparent layer conductor is an area I TO lead (redundant localized ITO) 66, and it is electrically connected with signal wire 64 by signal wire contact hole 82, and is electrically connected with thin film transistor (TFT) 70 by source electrode contact hole 86 and drain electrode contact hole 85.In addition, signal wire contact hole 82 is to be positioned at signal wire 64 and sweep trace 62 staggered places, signal wire 64 tops of sweep trace 62 both sides.In Fig. 2, dashed rectangle 83 representatives are electrically connected the part that causes point defect because of the filth that is produced in the manufacturing process makes spare area ITO lead 66 with pixel electrode 72.As seen from the figure, dashed rectangle 83 zones reduce significantly than prior art point defects generation area, therefore, can reduce owing to the point defect probability that particulate or metal pollutant caused, and improve the yield rate of making TFT-LCD.
See also Fig. 3, in Fig. 3 displayed map 2 along the diagrammatic cross-section of straight line V-V '.The present invention utilizes a kind of part synoptic diagram that comprises the TFTLCD 60 that five photoetching manufacturing process (PEP) method for making forms on transparent glass substrate 61.As shown in Figure 3, utilize the formed LCD of the present invention to comprise a thin film transistor (TFT) 70 and a signal wire 64 at least.Thin film transistor (TFT) 70 includes one by grid 90 that the first metal layer constituted, one source pole 94 and a drain electrode 96.Grid 90 is to form in same photoetching manufacturing process (PEP) with sweep trace 62 (not being shown in Fig. 3).Signal wire 64 is to be positioned at Different Plane with sweep trace 62, and is middle across an insulation course 91 and semi-conductor layer 92.Thin film transistor (TFT) 70 is via source electrode contact hole 86 and pixel electrode 72 conductings, and ITO lead 66 connects thin film transistor (TFT) 70 and signal wire 64 via drain electrode contact hole 85 and signal wire contact hole 82.
Please refer to Fig. 4 A to Fig. 4 E, Fig. 4 A to Fig. 4 E makes the schematic diagram of fabrication technology of TFT-LCD 60 for the present invention.Method for making of the present invention mainly is to be applied in a twisted nematic (twist-nematic is TN) in the making of formula TFT-LCD.Shown in Fig. 4 A, TFT-LCD 60 of the present invention is on the surface that is produced on the glass substrate 61.At first on the surface of glass substrate 61, deposit a first metal layer comprehensively, then carry out one first photoetching manufacturing process (PEP-1), on the surface of glass substrate 61, form a grid 90 and one scan line (not being shown among the figure), and grid 90 is to be connected with sweep trace.
Shown in Fig. 4 B, after finishing this first photoetching manufacturing process, then on glass substrate 61, deposit an insulation course 91, semi-conductor layer (semiconductor layer) 92, one doped silicon layer 102 and one second metal level 104 comprehensively.Semiconductor layer 92 optional majority crystal silicons (poly-silicon) or amorphous silicon (amorphous silicon) material are decided on conditions such as manufacturing process or display areas.Next, carry out one second photoetching manufacturing process (PEP-2), limit the pattern of semiconductor layer 92, this doped silicon layer 102 and this second metal level 104, in order to form a thin film transistor (TFT) island structure.
Shown in Fig. 4 C, carry out one the 3rd photoetching manufacturing process (PEP-3), in second metal level 104 and doped silicon layer 102, form a signal wire 64, source electrode 94 and drain electrode 96, finish the making of thin film transistor (TFT) 70 simultaneously.
Then, shown in Fig. 4 D, after the 3rd photoetching manufacturing process, above this glass substrate, form a protective seam (passivation layer) 106, and be covered in the surface of thin film transistor (TFT) 70 and this signal wire 64.Carry out one the 4th photoetching manufacturing process (PEP-4) then, in the protective seam 106 of drain electrode 96, source electrode 94 and signal wire 64 tops, to form source electrode contact hole 86, drain electrode contact hole 85 and signal wire contact hole 82 respectively.Shown in Fig. 4 E, follow the transparency conducting layer that comprehensive deposition one is made of tin indium oxide (ITO) on glass substrate 61, and fill up contact hole 86, contact hole 85 and contact hole 82.At last, carry out one the 5th photoetching manufacturing process (PEP-5), in this transparency conducting layer, to form a standby ITO wire pattern 66 and a pixel electrode pattern 72.
Than existing method for making, method for making of the present invention utilizes five photoetching manufacturing process (5PEP) to make the TFT-LCD element, this TFT-LCD element has a spare area ITO lead (redundant localized ITO) and is electrically connected with signal wire 64 and thin film transistor (TFT) 70 respectively by signal wire contact hole 82 and drain electrode contact hole 85 in interlaced area 81 tops of signal wire 64 and sweep trace 62.This spare area ITO lead 66 can form in a photoetching manufacturing process simultaneously with pixel electrode 72.The present invention can effectively solve because the point defect problem that filth or particulate caused improves the manufacturing process yield rate.In addition, TFT-LCD of the present invention has the function that prevents the signal wire broken string simultaneously.
The above is the preferred embodiments of the present invention only, and all equalizations of being done according to claim scope of the present invention change and modify, and all should belong to the covering scope of patent of the present invention.
Claims (7)
1. Thin Film Transistor-LCD (thin-film-transistor liquid-crystal-dispay, the method for making of intraconnections TFT-LCD) (interconnect), this thin film transistor (TFT) (TFT) is to be made on the substrate (substrate), include an one scan line (scan line) and a signal wire (signal line) on this substrate in addition, this signal wire is vertical with this sweep trace, and this sweep trace and this signal wire are to be positioned at Different Plane, and this method for making comprises the following steps:
Above this substrate, form a protective seam (passivation layer), to be covered in this thin film transistor (TFT) and this signal wire;
Limit the pattern of this protective seam, to the protective seam that is less than this signal wire top, form signal wire contact hole (contact hole);
Above this signal wire and this protective seam, form a transparency conducting layer, and this transparency conducting layer can be inserted this signal wire contact hole; And
Limit the pattern of this transparency conducting layer, make this transparency conducting layer remain in the staggered signal wire of this sweep trace directly over.
2. the method for claim 1, the signal wire contact hole that wherein is formed at this signal wire are to be positioned at and sweep trace both sides that this signal wire is staggered.
3. the method for claim 1, wherein this transparency conducting layer is that (indiumtin oxide ITO) constitutes by tin indium oxide.
4. method of making film transistor plane indicator, this method comprises the following steps:
One substrate is provided;
Deposition one the first metal layer on this substrate;
Carry out one first photograph and corrode the pattern that manufacturing process (PEP) limits this first metal layer, in this first metal layer, to form a grid and one scan line;
Deposition one insulation course makes it cover this first metal layer surface on this substrate;
Deposit semi-conductor layer, doping (doped) silicon layer and one second metal level in regular turn, carry out one second photograph and corrode the pattern that manufacturing process limits this semiconductor layer, this doped silicon layer and this second metal level, in order to form a thin film transistor (TFT) island structure;
Carry out one the 3rd photograph and corrosion manufacturing process with formation one a drain/source electrode and a signal wire in this second metal level and this doped silicon layer, and finish the making of this thin film transistor (TFT);
Above this substrate, form a protective seam, and be covered in the surface of this thin film transistor (TFT) and this signal wire;
Carry out one the 4th and take a picture and the corrosion manufacturing process, form signal wire contact hole (contact hole) at least in this protective seam above this signal wire; At least above this protective seam on this signal wire, form a transparency conducting layer, and this transparency conducting layer fills up this signal wire contact hole; And
Carry out one the 5th and take a picture and the corrosion manufacturing process, limit the pattern of this transparency conducting layer, make this transparency conducting layer be formed at least with the staggered signal wire of this sweep trace directly over.
5. method as claimed in claim 4, wherein this semiconductor layer is an amorphous silicon layer or polysilicon layer.
6. method as claimed in claim 4, wherein this transparency conducting layer is to be made of tin indium oxide (ITO).
7. method as claimed in claim 4, wherein this signal wire contact hole is positioned at the both sides of this signal wire and this sweep trace staggered place.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01101328 CN1124518C (en) | 2001-01-11 | 2001-01-11 | Process for preparing thin-film transistor LCD |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01101328 CN1124518C (en) | 2001-01-11 | 2001-01-11 | Process for preparing thin-film transistor LCD |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1363853A true CN1363853A (en) | 2002-08-14 |
| CN1124518C CN1124518C (en) | 2003-10-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 01101328 Expired - Lifetime CN1124518C (en) | 2001-01-11 | 2001-01-11 | Process for preparing thin-film transistor LCD |
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| Country | Link |
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| CN (1) | CN1124518C (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1301426C (en) * | 2003-08-19 | 2007-02-21 | 友达光电股份有限公司 | Liquid-crystal displaying panel with narrow frame design and producing method thereof |
| CN1304896C (en) * | 2003-04-29 | 2007-03-14 | 友达光电股份有限公司 | Fabrication method of thin film transistor liquid crystal display panel |
| CN100421257C (en) * | 2006-10-27 | 2008-09-24 | 北京京东方光电科技有限公司 | TFT LCD array substrate structure and its producing method |
| US7852438B2 (en) | 2003-12-29 | 2010-12-14 | Lg Display Co., Ltd. | Transflective type liquid crystal display device and method for fabricating the same |
| CN104062791A (en) * | 2013-11-28 | 2014-09-24 | 京东方科技集团股份有限公司 | Electrically-driven liquid crystal stereo display element, manufacturing method and display equipment |
-
2001
- 2001-01-11 CN CN 01101328 patent/CN1124518C/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1304896C (en) * | 2003-04-29 | 2007-03-14 | 友达光电股份有限公司 | Fabrication method of thin film transistor liquid crystal display panel |
| CN1301426C (en) * | 2003-08-19 | 2007-02-21 | 友达光电股份有限公司 | Liquid-crystal displaying panel with narrow frame design and producing method thereof |
| US7852438B2 (en) | 2003-12-29 | 2010-12-14 | Lg Display Co., Ltd. | Transflective type liquid crystal display device and method for fabricating the same |
| CN1637551B (en) * | 2003-12-29 | 2012-07-11 | 乐金显示有限公司 | Transflective type liquid crystal display device and method for fabricating the same |
| CN100421257C (en) * | 2006-10-27 | 2008-09-24 | 北京京东方光电科技有限公司 | TFT LCD array substrate structure and its producing method |
| CN104062791A (en) * | 2013-11-28 | 2014-09-24 | 京东方科技集团股份有限公司 | Electrically-driven liquid crystal stereo display element, manufacturing method and display equipment |
| CN104062791B (en) * | 2013-11-28 | 2017-01-25 | 京东方科技集团股份有限公司 | Manufacturing method of electrically-driven liquid crystal stereo display element |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1124518C (en) | 2003-10-15 |
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