CN1349304A

CN1349304A - Transistor vibrator assembly and its mfg. method, and method for mfg. various connected glass plate used for electronic element assembly

Info

Publication number: CN1349304A
Application number: CN 01142550
Authority: CN
Inventors: 福原太一; 伊熊敏郎; 芝冈和夫; 若杉信; 若林久雄
Original assignee: Nippon Sheet Glass Co Ltd
Current assignee: Nippon Sheet Glass Co Ltd
Priority date: 2000-08-07
Filing date: 2001-08-07
Publication date: 2002-05-15
Anticipated expiration: 2021-08-07
Also published as: CN1255945C

Abstract

The present invention provides a technique capable of realizing adjustment of frequency characteristics of a crystal piece in a packaged state. The crystal oscillator package 10 comprises: a base member 20 manufactured with a glass having high transmittance; a crystal vibrator 14 which is adhered to a silver paste 12 to this base member 20, and is mounted thereto in an overhung support state; and a cap member 16 to be mounted to the base member 20 so as to airtightly seal this crystal vibrator 14. Compared with ceramics, the glass is extremely easy to mold and its manufacturing cost can be lowered, and its thermal conductivity is small. Therefore, the thermal insulating properties are superior, thereby displaying an operation of efficiently protecting the inside crystal vibrator. As the base member is structured by the mold product made of the glass with the high transmittance, it is possible to readily execute adjustment of frequencies of the inside crystal vibrator by projection of laser beams.

Description

The manufacture method of the various connected glass plate of transistor vibrator assembly, its manufacture method and used for electronic element assembly

Technical field that the present invention belongs to

It is relevant that the improvement of various connected glass plate manufacturing technology of electronic component housing is made in the structure of the present invention and transistor vibrator assembly, the improvement of its manufacturing technology and being used to.

Prior art

For the frequency characteristic that makes quartz crystal unit is superior, usually with it as a solid state circuit composition element, specifically, as printed substrate part is installed and is used.But, for the stability of characteristics that makes quartz crystal unit, the influence of avoiding outside air, requirement is installed in it in airtight container, the example of structure of container like this, open flat 11-302034 communique the spy, promptly open in the applications such as " glass ceramics complexs and with the flat package piezoelectricity part of its manufacturing ".

Concrete structure is seen Fig. 1 of above-mentioned communique, and crystal wafer 12 in intercalation in the pedestal 11 (symbol is to put down in writing in the communique, below identical), with covering 13 crystal 12 is covered again, and this has just represented the structure of transistor vibrator assembly 15.In this invention, it is characterized in that for example, using the material that glass powder is blended in the pottery to make quartz crystal unit shell 15 with almost making transistor vibrator assembly 15 with crystal wafer 12 coefficient of thermal expansion identical materials.

The problem that invention solves

If there is significant difference in the thermal expansion of the coefficient of thermal expansion of transistor vibrator assembly 15 and crystal wafer 12, the heat of transistor vibrator assembly 15 is flexible will to influence crystal wafer 12, and then cause the frequency characteristic of crystal wafer 12 to worsen, and this point will fully take into account.Because the invention in above-mentioned communique, its both coefficient of thermal expansion is approximately uniform, so above-mentioned worry is unnecessary.

But there is following problem in above-mentioned invention:

1. can not observe crystal wafer 12 owing to close the lid from the outside after 13,, can not adjust so want to adjust the frequency characteristic of crystal wafer 12.That is, in the prior art, be the frequency characteristic of individual event control crystal wafer 12, can not adjust at the state that it is contained in the transistor vibrator assembly 15, can only admit error.And owing to bonding agent crystal wafer 12 is bonded on the pedestal 11, so bonding situation (amount of bonding agent and bonding plane) can cause the delicate variation of the frequency characteristic of crystal wafer 12.

In the last few years, in strict ERROR CONTROL, need to realize the frequency characteristic with the crystal wafer of shell encapsulationization is carried out tight control to the solid state circuit composition element.

2. since the transistor vibrator assembly 15 of prior art be single-piece production, be about to crystal wafer 12 and be installed on the pedestal 11, and then crystal wafer 12 covered, so its productivity ratio is very low with covering 13.

3. owing to crystal wafer 12 must be fixed on the appropriate location of pedestal 11, so correctly be fixed on definite position in order to guarantee, require pedestal 11 that suitable size is arranged, the size of available technology adopting is 2mm * 4mm.Surpass above-mentioned size and be difficult to realize miniaturization.

The object of the present invention is to provide can be to being realized the frequency characteristic adjustment, improving output and the easy technology that realizes making pedestal and shell miniaturization by the crystal wafer in the shell encapsulation state.

Be used to solve the means of problem

In order to realize above-mentioned goal of the invention, the technical scheme that adopts following claim to provide:

Transistor vibrator assembly, by pedestal, be installed in the quartz crystal unit on this pedestal and be used to seal the lid of this quartz crystal unit on said base and form, it is characterized in that at least one is the moulding product with glass in the base and cover.

In the prior art; be to make pedestal and/or lid with pottery; and the present invention is the moulding product made from glass; compare with pottery; not only as easy as rolling off a log shaping of glass but also manufacturing cost are also low; because the glass heat conductivity is little so thermal insulation good, can be to the quartz crystal unit performance good protective action of inside.In addition, owing to make pedestal and/or lid with the high glass plate of transmission coefficient, therefore can implement the adjustment of its frequency characteristic with the quartz crystal unit that laser beam is easily internally adorned.

Transistor vibrator assembly according to claim 2 is characterized in that, the gap of 50 μ m is set between said base and the above-mentioned quartz crystal unit at least.

Owing to above-mentioned gap is set, can easily only cuts off to quartz crystal unit with laser beam.The gap is less than 50 μ m, and the heat that adds to quartz crystal unit will be to the pedestal transmission, and this not only makes operation decline, and may cause pedestal to be melted.Therefore, between pedestal and the quartz crystal unit, the gap of at least 50 μ m must be set.

Transistor vibrator assembly according to claim 3 is characterized in that, in order to ensure above-mentioned gap, recess is set on pedestal.

In order to ensure the gap, though considered several structures, wherein simple structure is that recess is set on pedestal, especially can be in shaping base the shaping recess, thereby can reduce manufacturing cost.

Transistor vibrator assembly according to claim 4 is characterized in that, at least topped electromagnetic shielding film on the outer surface of above-mentioned lid.

Can cut off injecting or cut off spreading out of like this from the electromagnetic interference of outside from the noise of quartz crystal unit electromagnetism fault.

Transistor vibrator assembly according to claim 5, it is characterized in that, the electrode of connecting outside usefulness is set being provided with on the face of said base on the electrode connecting crystal and use, another face in said base, these are connected the electrode that crystal use and the conductive pieces of electrodes in being embedded in through hole of connecting outside usefulness is electrically connected, and quartz crystal unit is overlapped on connects on the electrode that crystal uses.

Directly connect by through hole owing to connect crystal electrode of using and the electrode of connecting outside usefulness, so the distribution amount is few, so the stability of characteristics of the electricity of quartz crystal unit.

Transistor vibrator assembly according to claim 6, it is characterized in that, the electrode of connecting outside usefulness is set on a face of pedestal, on another face of pedestal, be provided with and connect the electrode that crystal is used, on the electrode that this connection crystal is used, overlap quartz crystal unit, and with running through the electrode electrical connection that said base and metal parts are used the electrode and the connection crystal of the outside usefulness of above-mentioned connection.

Because the metal parts good conductivity, therefore can make the characteristic of electricity of quartz crystal unit more stable.

Transistor vibrator assembly according to claim 7, it is characterized in that, the electrode of connecting outside usefulness is set on a face of pedestal, make the metal parts that runs through said base connect the electrode of the outside usefulness of above-mentioned connection, and stretch out above-mentioned metal parts, on the front end face of this extension, directly overlap above-mentioned quartz crystal unit from another face of said base.

On the front end face owing to the external part that directly quartz crystal unit is overlapped on metal parts, connect the electrode that crystal is used, so not only reduced man-hour, also can reduce the cost of manufacturing cost and reduction finished product so can save.

The manufacture method of transistor vibrator assembly according to Claim 8 is characterized in that comprising following operation:

Forming process, being about to material glass is placed between the upper and lower mould of finishing die, make this material glass be heated to the above and glass plate of press molding of its softening point temperature, several disjunctor pedestals that the vertical m that is shaped on an above-mentioned glass plate * the individual transistor vibrator assembly of horizontal n is used;

Electrode forming process, conductive pieces from a face to another face promptly is set on each pedestal that obtains, forms the electrode of the outside usefulness of connection that is connected electrically on above-mentioned those conductive pieces respectively and connect the electrode that crystal is used on another face at a face of pedestal;

Crystal overlap joint operation promptly overlaps quartz crystal unit on the electrode that the connection crystal that forms is used;

Sealing process is the above-mentioned quartz crystal unit of sealing, will cover on said base;

Cutting off operation, be about to an above-mentioned glass plate, is that unit cuts into m * n transistor vibrator assembly with the said base.Wherein, m, n are the positive integers more than 1.

Because the pedestal that assembly is used is made by various connected formula pressing with material glass.So adopt various connected formula, just can obtain (the pedestal that m * n) is individual, so can boost productivity extraordinarily by 1 stamping procedure.

Owing to be on the glass plate that forms by various connected pedestal, quartz crystal unit to be installed, after closing the lid, cut apart the transistor vibrator assembly that pedestal obtains m * n again, so can improve the output of transistor vibrator assembly extraordinarily.

In addition, because quartz crystal unit and lid are installed under so-called structural glass board status, and then cut apart, so can easily realize the miniaturization of transistor vibrator assembly.

Manufacture method according to the transistor vibrator assembly of claim 9, it is characterized in that, before or after above-mentioned cut-out operation, the laser beam that passes pedestal and focus on from the assembly external irradiation to quartz crystal unit, make the part vaporization of quartz crystal unit, maybe the metal film that will cover on the quartz crystal unit removes a part, realizes the frequency adjustment to quartz crystal unit thus.

Owing in pedestal, adopted the high glass of transmission coefficient, therefore, can adjust the frequency of quartz crystal unit with behind its formation shell, therefore, can carry out high-precision control to the frequency characteristic of transistor vibrator assembly.

Manufacture method according to the transistor vibrator assembly of claim 10 is characterized in that, the cut-out of above-mentioned cut-out operation can fuse or rubs with skive with laser beam, also can cut off with the bending of machinery.

Cut off the time that can shorten the cut-out needs with laser beam, also can finish mechanical cutting with cheap bender, but output is little, also can fracture by hand.Therefore, can reduce production costs.

Manufacture method according to the transistor vibrator assembly of claim 11 is characterized in that, in above-mentioned forming process, when being shaped, forms a face the running through pedestal through hole to another face with being arranged on pin on the finishing die on pedestal.

In the present invention, by being arranged on the pin on the finishing die, can in forming process, form through hole, in routine techniques though be to form operation and processing through hole operation respectively, but it is very economical that the present invention is merged above-mentioned two procedures in one procedure, has reduced manufacturing procedure.

Manufacture method according to the transistor vibrator assembly of claim 12, it is characterized in that, in electrode forming process, above-mentioned conductive pieces is embedded in the through hole that connects formation in the pedestal, on pedestal, form the electrode of connecting outside usefulness and connect the electrode that crystal is used with print process simultaneously.

Adopt print process, can form the good electrode of efficient at short notice.Promptly, adopt the present invention, can shorten the electrode formation time of electrode forming process, therefore can shorten the manufacturing time of transistor vibrator assembly.

In claim 13, the pedestal that manufacturing will be indulged a plurality of used for electronic element assembly of m * horizontal n is arranged in the method for a plurality of connected glass plates that chocolate shape constitutes, it is characterized in that: between the upper and lower mould of finishing die, put into material glass, this material glass is heated to it more than softening point temperature, in press molding,, on above-mentioned each pedestal, process through hole with the pin that is arranged on the finishing die.

Because the pedestal of used for electronic element assembly is made with material glass with several Contiuum type pressings.And process necessary through hole simultaneously in punching press.

(the individual pedestal of m * n) therefore can be boosted productivity extraordinarily obtaining in the disjunctor stamping procedure like this.

The manufacture method of several connected glass plates of the used for electronic element assembly of claim 14 is characterized in that, material glass is heated to its more than softening point temperature in, the junction of adjacent pedestal is processed into thinner than other parts.

Owing to process pedestal and pedestal junction thinner, so realize the cut-out operation of postorder easily than other parts.

Several of the used for electronic element assembly of claim 15 connect the manufacture method of glass plate, it is characterized in that the thickness of the junction of adjacent pedestal is 0.1～0.3mm.

If the thickness of pedestal and pedestal junction is processed into 0.3mm or thinner than it, then can just can fractures by hand.But the thickness of above-mentioned junction can cause difficulty to processing during less than 0.1mm, and processing charges increases, so the thickness of pedestal junction is decided to be 0.1～0.3mm.

Material glass is that the low iron that iron-holder is no more than 3000ppm divides glass in claim 16.

The low iron that adopts iron-holder to be no more than 3000ppm divides glass, and laser beam is fully passed through.If the glass that the use iron-holder is many, laser can be absorbed by this glass, thereby may cause pedestal to be melted, thus need not this glass for well.

Brief description of drawings

Fig. 1 is the profile of transistor vibrator assembly of the present invention;

Fig. 2 is the cutaway view at 2-2 place among Fig. 1;

Fig. 3 is the schematic diagram of the finishing die of manufacturing pedestal of the present invention;

Fig. 4 is the action diagram of Fig. 3;

Fig. 5 is the program diagram of several connected glass plate pedestals of manufacturing of the present invention;

Fig. 6 is the plane graph of several connected glass plate pedestals of the present invention;

Fig. 7 be transistor vibrator assembly of the present invention manufacturing instructions figure 1;

Fig. 8 be transistor vibrator assembly of the present invention manufacturing instructions figure 2;

Fig. 9 is the flow sheet of transistor vibrator assembly of the present invention;

Figure 10 is another enforcement illustration of Fig. 9;

Figure 11 is another enforcement illustration of Fig. 1;

Figure 12 is another enforcement illustration of Fig. 1;

Figure 13 is the cutaway view at 13-13 place among Figure 12;

Figure 14 is the cutaway view at 14-14 place among Figure 12;

Figure 15 is that point diagram is wanted in the metal parts installation among expression Figure 12;

Figure 16 is another enforcement illustration of Figure 15;

Figure 17 is another enforcement illustration of Fig. 1;

Figure 18 is the cutaway view at 18-18 place among Figure 17;

Figure 19 is the alternate embodiment figure of Fig. 1;

Figure 20 is the alternate embodiment figure of Fig. 1.

Below, the accompanying drawings embodiments of the invention.In addition, for reference purpose, list below in the most corresponding accompanying drawing of each claim:

Claim 1: Fig. 1, Figure 11, Figure 12, Figure 17;

Claim 2: Fig. 8 (b);

Claim 3: Fig. 1, Fig. 8 (b);

Claim 5: Fig. 1, Figure 11;

Claim 6: Figure 12, Figure 16 (d), Figure 17;

Claim 7: Figure 16 (d), Figure 17;

Power requires 8: Fig. 5, Fig. 9 or Figure 10;

Claim 9: Fig. 8 (b) or (c);

Claim 10: Figure 18;

Claim 11: Fig. 4;

Claim 12: Fig. 7 (b);

Claim 13: Fig. 5;

The label 51 of claim 14: Fig. 7 (a);

The label 51 of claim 15: Fig. 7 (a);

The label 45 of claim 16: Fig. 3.

Fig. 1 is the profile of transistor vibrator assembly of the present invention, transistor vibrator assembly 10 by with the electricity that is used to connect crystal on the pedestal 20 of the higher glass manufacturing of transmissivity, bonding this

pedestal

20 and 13 and the quartz crystal unit 14 installed with the cantilever support state and the being used to lid 16 that covers on pedestal 20 that seals this quartz crystal unit 14 form.Wherein, the 17th, glass is bonding agent, in order to improve bonding force, should be with pedestal 20 be used to that to smear this glass be that to be processed into surface roughness be 3～4 μ m for the edge of bonding agent 17.Can easily form above-mentioned matsurface with the alumina abrasive grinding.

Lid 16 can be made with opaque materials such as metals, but in order to be used to adjust the frequency of crystal inside oscillator, laser beam wants the transmission pedestal to shine quartz crystal unit, therefore, in order to make laser beam transmission fully, the iron-holder of glass plate that just requires to be used to make pedestal is below 3000ppm.As the material glass plate---be used for building doors and windows the soda lime silicate glass, be used for the alkali-free glass of liquid crystal display and be used for PDP showing that the low alkali of glass or glass etc. all can adopt, as long as can guarantee transmissivity, select for use any composition can.

Also can adopt finished product that clear glass makes or constitute as for lid 16 with glass.This occasion will cover the metal film that electromagnetic sealing is used at least on a surface.The GND of this metal film and pedestal 20 (ground connection) terminal is (not shown) in succession, so can cut off from the incident of the electromagnetic interference of outside, and, also the electromagnetism obstacle noise (EMI noise) of emitting from quartz crystal unit can be cut off and not transmit to the outside.

Pedestal and covering lid are thereon all made the moulding product with glass, and both linear expansivities are the same, so when humidity changed, shell can not be out of shape, therefore, shell can successfully expand or shrink.

And, on pedestal 20, be provided with recessedly 21, ask to be provided with

electrode

22,23 below it that through hole 24 is set, and the thickness T at edge 25 is below 0.3mm on the top and bottom of pedestal 20.The 12nd, be embedded in the conductive pieces of elargol in the through hole 24 etc.

In the prior art, adopt ceramic material to make pedestal, the pyroconductivity of pottery is 24.3W/ (mK), and the pyroconductivity of glass is 1W/ (mK).The transistor vibrator assembly of adorning in the roam-a-phone 10 is example, when being subjected to solar temperature to change greatly, the heat-insulating property of the pedestal made from glass 20 is higher more than 20 times than what make with pottery, therefore, when standing variations in temperature with the transistor vibrator assembly of glass manufacturing, the quartz crystal unit 14 that the is mounted in it adequate time of also working.

Therefore, the material with pedestal can realize that by the present invention that pottery changes glass into the vibration performance of quartz crystal unit 14 is stable.

Fig. 2 is the cutaway view at 2-2 place among Fig. 1, and when from transistor vibrator assembly 10, the quartz crystal unit 14 of U font is to be supported on to connect on the electrode 13 that crystal uses, and is the cantilever beam that prolongs on recess 21.Owing to such quartz crystal unit 14 and recess 21 usefulness lid 16 are surrounded, so it has shown quartz crystal unit and the isolated structure of outside atmosphere.

Explanation is used to have the pedestal 20 that the glass of above structure is made in order below, is applicable to the finishing die of making pedestal 20 and the manufacture method of using this finishing die.

Fig. 3 is the schematic diagram that is used to make the finishing die of pedestal of the present invention, and finishing die 30 is made of movable patrix 31 and fixed counterdie 41.Patrix 31 also can be a fixed, and counterdie then can be movable.

In example, on patrix 31, be provided for forming the pin 32 of through hole ... (... represent several, below identical) and form the protuberance 33 that the junction is used ..., also the recess 42 of fitting pin 32 is set on counterdie 41 ..., air vent hole 43 ... with form the protuberance 44 that recess is used ...Represent material glass with chain-dotted line 45.

That is, this finishing die 30 is several disjunctor moulds that just can produce several pedestals 20 (seeing Fig. 1,2) at one stamping procedure.

Fig. 4 is the work sheet of Fig. 3, obtains several connected glass plate pedestals 50 by punching press.Drop in the process of bottom dead centre at patrix 31, form with pin 32 with through hole ... on several connected glass plate pedestals 50, form through hole 24 ..., with the protuberance 33 that forms the junction ... form thin junction, use the protuberance 44 that forms recess ... form recess 21 ...

Be summarized in the manufacture method of several connected glass plate pedestals of manufacturing of Fig. 4 explanation with figure below.

Fig. 5 is the program diagram of several connected glass plate pedestals of manufacturing of the present invention.ST * * expression operation number (following identical).

ST01: at first, prepare material glass and finishing die.

ST02: between upper and lower mould, put into material glass.

ST03: material glass is heated to it more than softening point temperature.

STO4: implement drawing.By this punching press, process through hole and thinner wall section simultaneously.

ST05: several connected glass plate pedestals of sending shaping.

Fig. 6 is the plane graph of several connected glass plate pedestals of the present invention, on several connected glass plate pedestals 50 recess 20 is arranged ... and through hole 24 ... has thinner wall section 51 simultaneously in the junction.By vertical thinner wall section 51 and horizontal vertical m * horizontal n pedestal of arranging of the checkerboard that constitutes of thinner wall section 51 or chocolate shape, thereby constituted several connected glass plate pedestal 50.

Below, illustrate with several such connected glass plate pedestals 50, make the technology of several transistor vibrator assemblies.

(a)～(c) among Fig. 7 be transistor vibrator assembly of the present invention manufacturing instructions figure 1.

(a) represented to shape, had recess 21 on it by last operation (ST05) ..., through hole 24 ... simultaneously has the thinner wall section 51 of groove shape in exchange place ... several connected glass plate pedestals 50.

(b) expression is such assembling process: to through hole 24 ... conductive pieces 12 such as middle filling elargol ..., on the top and bottom of several connected glass plate pedestals 50, be provided with and connect the electrode 13 that crystal is used with print process ... with the electrode 22 of connecting outside usefulness ..., 23 ..., with quartz crystal unit 14 ... be bonded in and connect the electrode 13 that crystal is used ... on.

(c) expression is such assembling process: with glass is bonding agent 17 ... to cover 16 ... be bonded at thinner wall section 51 ... above.

(a)～(c) among Fig. 8 be transistor vibrator assembly of the present invention manufacturing instructions figure 2.

(a) with the laser beam 52 that cuts off usefulness ... cut off the thinner wall section 51 that constitutes the junction ...Also can be as branch thin pancake and chocolate, in thinner wall section 51 ... on apply mechanical bending power, cut off with mechanical means.

As the prerequisite of cutting off, to process thin thinner wall section 51 thinner exactly than other parts.Specifically, the thickness of Bao thinner wall section 51 can not surpass 0.3mm.Especially glass is when its thickness is to cut off very easily during less than 0.3mm.Even cut off, also be to get over Bao Yuehao with laser beam.

Then, (b) pass pedestal 20 from the outside of pedestal 20 with laser beam 53 and focus on to the front end irradiation of quartz crystal unit 14, make the front end vaporization of quartz crystal unit 14, its amount of subduing is Δ L, realizes the adjustment to the frequency of quartz crystal unit 14 thus.Therefore, the length in reserve of quartz crystal unit 14 should be (L+ Δ L), that is, make it a little long.

Because laser beam 53 is a kind of of YAG (yttrium-aluminium-garnet) laser beam, so the iron in the glass divides it had shielding action, so will use the glass of iron-holder below 3000ppm.

In addition, when focusing on the front end irradiation of laser to quartz crystal unit 14, when making crystal heating vaporization, this quartz crystal unit 14 had better not contact with pedestal 20 or be approaching.If contact or approaching, heat can be delivered on the pedestal 20 from quartz crystal unit 14, and this can be wanted the position of vaporization process to cause difficulty.In addition, also do not aim at the front end of quartz crystal unit 14 from the side of pedestal 20.

There, the gap d between pedestal 20 and the quartz crystal unit 14 is 50 μ m at least.This gap d is guaranteed by the degree of depth that is set in the recess 21 that has the suitable degree of depth in the pedestal 20.

(c) be the view of another embodiment of (b), that is, on quartz crystal unit 14, reserve metal film 54 partly.The weight of this metal film 54 can play the weights effect.Because lid 16 usefulness glass are made, and luminous energy passes through, so,, the part of metal film 54 is vaporized with laser beam 56 irradiation metal films 54 from the top with the heat energy of laser.As a result, because the variation of weight causes that the frequency of quartz crystal unit 14 also changes.That is, adopt (c) method, need not shear quartz crystal unit 14 and just can adjust frequency.According to the kind of quartz crystal unit, owing to metal film 54 is not arranged on central portion in the front portion of quartz crystal unit, so the position of laser beam 54 complexed metal films 54 and suitable irradiation.

Manufacture method with Fig. 7,8 transistor vibrator assemblies that illustrate is summarized among the 9th figure.

Fig. 9 is the flow sheet of transistor vibrator assembly of the present invention.

ST11: at first, prepare several connected glass plate pedestals (referring to Fig. 7 (a)).

ST12: in through hole, bury elargol (seeing Fig. 7 (b)) underground as electric conducting material.

ST13: print electrode.As required, carry out gold-plated (seeing Fig. 7 (b)).

ST14: quartz crystal unit (seeing Fig. 7 (b)) is installed.

ST15: mounting cover (seeing Fig. 7 (c)).

ST16: cut off the disjunctor pedestal or cut off the disjunctor pedestal with hand or the machinery method that fractures with laser beam or skive.Skive sticks on the disk periphery with diamond grit and forms, so can cut off glass when the disk high speed rotating.

ST17: the frequency (see Fig. 8 (b) or (c)) of adjusting quartz crystal unit with laser beam.

ST18: can obtain transistor vibrator assembly (seeing Fig. 1,2) with this.

Figure 10 is that illustration is implemented in the improvement of Fig. 9, and difference is the ST18 among Fig. 9 to be transferred to the front of ST16 (or ST17).Below, describe again.

ST21: at first, prepare several connected glass plate pedestals (seeing Fig. 7 (a)).

ST22: in through hole, bury elargol (seeing Fig. 7 (b)) underground as electric conducting material.

ST23: print electrode, as required, carry out gold-plated (seeing Fig. 7 (b)).

ST24: quartz crystal unit (seeing Fig. 7 (b)) is installed.

ST25: mounting cover (seeing Fig. 7 (c)).

ST26: adjust quartz crystal unit frequency (see Fig. 8 (b) or (c)) with laser beam.

ST27: cut off disjunctor pedestal or hand or the machinery method that fractures with laser beam or skive and cut off the disjunctor pedestal.

ST28: can obtain transistor vibrator assembly (seeing Fig. 1,2) with this.

Figure 11 is that illustration is implemented in the improvement of Fig. 1, this transistor vibrator assembly 10 by the pedestal 20 of the high glass manufacturing of transmissivity, engage that being used on this pedestal 20 connected the electrode 13 of crystal and with the quartz crystal unit 14 of cantilevered fashion supporting, be used to seal covering at the lid on the pedestal 20 16 and stick to the pedestal baffle 55 that the glass at the end of pedestal 20 makes and forming of this quartz crystal unit 14.

Pedestal baffle 55 can seal, that is, can cut off by the leakage of through hole 24 or prevent that effectively atmosphere from invading.

Figure 12 is that illustration is implemented in another improvement of Fig. 1, and the feature of this transistor vibrator assembly 10 is that the

electrode

22,23 of connecting outside usefulness is set on a face of pedestal 20.The electrode 13 of connecting crystal is set on another face of pedestal 20, quartz crystal unit 14 is overlapped on the electrode 13 that this connection crystal uses, will connects the electrode 22 of outside usefulness and electrode 14 making current that the connection crystal is used with the metal parts 58 that runs through pedestal 20 simultaneously.

After being installed in an end of quartz crystal unit 14 on the electrode 13 of connecting crystal, might as well increase bond strengths by bonding agent 59.And, lid 16 be with glass finished product, can be with laser beam 56 irradiation metal films 56, so can easily adjust the frequency of quartz crystal unit 14.The symbol of other formation is constant, the event explanation is omitted.

Figure 13 is the cutaway view at the 13-15 place of Figure 12, and quartz crystal unit 14 is overlapped on to be connected on the

electrode

13,13 that crystal uses, and connects crystal at these and connecting

metal parts

58,58 below

electrode

13,13.

Figure 14 is the 14-14 place view of Figure 12, forms the

electrode

22,22,23,23 of connecting outside usefulness with print process on a face of pedestal 20, and

metal parts

58,58 extends to its inner surface from the

electrode

22,22 of connecting outside usefulness.

Figure 15 (a)～(c) has represented that point diagram is wanted in the installation of metal parts among Figure 12.

For example, in (a), on pedestal 20, offer the through hole 61 of small-bore, be in the thermal softening state, the metal parts 58 of pin shape is squeezed into through hole 61 at pedestal 20.

(b) metal parts 58 and the pedestal 20 after having represented to squeeze into.

In (c), the

electrode

22,23 of outside usefulness is connected in printing on a face of pedestal 20, and the electrode 13 that crystal is used is connected in printing on another face, quartz crystal unit 14 can be installed on the electrode 13 that this connection crystal uses.

Figure 16 (a)～(d) is that illustration is implemented in the improvement of Figure 15.

(a) in, the metal parts 62 of special shape is pressed in the pedestal 20.

(b) be the oblique view of the metal parts 62 of special shape, the profile at c-c place that (c) is (a), this metal parts 62 is the flat-headed pin that are made of the axial region 64 that very big tack 63 and rectangular cross section are arranged.

(d) in, on the tack 63 of metal parts 62, directly be stained with quartz crystal unit 14 with bonding agent 63.So just saved and connected the electrode 13 (seeing (c) among Figure 15) that crystal is used.

Figure 17 is that illustration is implemented in another improvement of Fig. 1, in this transistor vibrator assembly 10, on pedestal 20, be pressed into thick pin

shape metal parts

66,67, end (lower end in the drawings) at this

metal parts

66,67 is connected with the

electrode

22,23 of connecting outside usefulness, quartz crystal unit 14 carried on the arm be connected on the

metalwork

66,67, fixing with bonding agent 59 on a metalwork 66.

Figure 18 is the profile at 18-18 place among Figure 17, and quartz crystal unit 14 is to carry on

metalwork

66,66,67.The symbol of other formation is constant, the Therefore, omited explanation.

Figure 19 is that illustration is implemented in the improvement of Fig. 1, and the part identical with Fig. 1 prolonged the symbol with Fig. 1, so explanation is omitted.Promptly, in this transistor vibrator assembly 10, one constitutes lid on dull and stereotyped 68 by wall 69 usefulness bonding agents 17 are bonded at.Like this, transistor vibrator assembly 10 is just by pedestal 20, wall 69 and dull and stereotyped 68 these three stacked forming of important document.Flat board 68 is made easily, low price.Wall 69 also is same.Therefore, can reduce the cost of transistor vibrator assembly 10.

Figure 20 is another improved enforcement illustration of Fig. 1, the

electrode

22,23 of connecting outside usefulness extend to pedestal 20 the side and above.And, quartz crystal unit 14 directly is overlapped on the electrode 22 of connecting outside usefulness.So just can save conductive pieces 12 and electrode 13 among Fig. 1.

Among the present invention, be to be adapted at very much installing on the pedestal quartz crystal unit with several connected glass plate pedestals of the method manufacturing of claim 13-16, its also is fit to load other solid state circuit composition elements such as transistor, diode.Therefore, several connected glass plate pedestals with the method manufacturing of claim 13～16 can be widely used in the manufacturing of electronic element assembly.

Adopt said structure of the present invention, can bring into play following effect:

The transistor vibrator assembly of claim 1 is by pedestal, be installed in the crystal oscillator on this pedestal and be used for envelope The lid that covers on said base that closes this crystal oscillator forms, and it is characterized in that at least one is in the base and cover Products formed with glass system. That is, be to make pedestal and/or lid with pottery in the prior art, and the present invention It is the products formed made from glass. Compare with pottery, not only shaping but also manufacturing cost are also low extremely easily for glass, Because the glass heat conductivity is little, thermal insulation is good, therefore can be to the good protective effect of crystal oscillator performance of inside. In addition, again owing to make pedestal and/or lid with the high glass plate of transmission coefficient, so can be with laser beam easily In-built crystal oscillator is implemented the adjustment of its frequency characteristic.

The transistor vibrator assembly of claim 2 is characterized in that, between said base and the above-mentioned crystal oscillator, The gap of 50 μ m is set at least.

Owing to above-mentioned gap is set, therefore can only cuts off the crystal oscillator with laser beam easily. The gap Less than 50 μ m, add to the heat of crystal oscillator to the pedestal transmission, this not only makes operation decline, and may make Become pedestal to be melted. The gap that 50 μ m therefore, must setting between pedestal and the crystal oscillator will be arranged at least.

The transistor vibrator assembly of claim 3 is characterized in that, in order to guarantee above-mentioned gap, establishes at pedestal Put recess.

In order to guarantee the gap, although considered several structures, wherein simple structure be arrange at pedestal recessed Section, thus manufacturing cost can be reduced.

The transistor vibrator assembly of claim 4 is characterized in that, and is at least topped on the outer surface of above-mentioned lid It is magnetic shield film.

Can cut off like this injecting or cut off assorted from crystal oscillator electromagnetism fault from the electromagnetic interference of outside Spreading out of of sound.

The transistor vibrator assembly of claim 5 is characterized in that, at a face of said base connection is set The electrode that crystal is used, at another face of said base the electrode of connecting outside usefulness is set, these is connected brilliant The conductive pieces turn-on current of electrode in being embedded in through hole of the electrode of body and function and the outside usefulness of connection, and with above-mentioned The crystal oscillator is overlapped on the electrode that above-mentioned connection crystal uses.

Because the electrode that the connection crystal is used and the electrode of connecting outside usefulness are that via through holes is directly connected, so distribution Amount is few, and the electrical characteristics of crystal oscillator are stable.

The transistor vibrator assembly of claim 6 is characterized in that, at a face of said base connection is set The electrode of outside usefulness, arrange at another face of said base and to connect the electrode that crystal is used, connect crystal at this With electrode on the above-mentioned crystal oscillator of overlap joint, and with the electricity of the metal part that runs through pedestal with above-mentioned connection outside usefulness The electrode turn-on current that the utmost point and connection crystal are used.

Because metal part good conductivity, so what can make the crystal oscillator is that characteristic is more stable.

The transistor vibrator assembly of claim 7 is characterized in that, at a face of said base connection is set The electrode of outside usefulness, connect the electrode of the outside usefulness of above-mentioned connection with the metal part that runs through said base, and from upper State and stretch out above-mentioned metal part on another face of pedestal iron, directly overlap joint is above-mentioned on this stretches out the front end face of part The crystal oscillator.

Directly the crystal oscillator is overlapped on by ground on the front end face of external part of metal part, so can save connection The electrode that crystal is used has so not only reduced man-hour, and can also reduce the cost of manufacturing cost and reduction finished product.

The manufacture method of the transistor vibrator assembly of claim 8 is characterized in that comprising following program:

Forming process is about to material glass and is placed between the upper and lower mould of finishing die, and this material glass is heated to it More than the softening point temperature, and glass plate of press molding, an above-mentioned glass plate add molded vertical m * Some the conjoined bases that horizontal n transistor vibrator assembly is used;

Electrode forming process namely arranges conductive pieces from of each pedestal of obtaining towards another face, And brilliant by electrode and the connection of the outside usefulness of connection of above-mentioned those conductive pieces turn-on current in above-mentioned each face formation The electrode of body and function;

Crystal overlap joint operation is namely connected the electrode overlap joint crystal oscillator that crystal is used in formation;

Closing step is the above-mentioned crystal oscillator of sealing, will cover on said base;

Cut off operation, be about to an above-mentioned glass plate, cut into m * n crystal take said base as the unit Vibrator component.

Because the pedestal that assembly is used is made by some Contiuum type pressings with material glass, so the company of employing The body formula just can obtain (the pedestal that m * n) is individual, so can especially boost productivity by 1 punching press.

Owing to be at the glass plate that is formed by some conjoined bases the crystal oscillator to be installed, will cover at pedestal again On, and then cut apart the transistor vibrator assembly that pedestal obtains m * n, so can especially improve the crystal oscillator The output of assembly.

In addition, because crystal oscillator and lid are installed under so-called structural glass board status, and then divide Cut, so can realize easily the miniaturization of transistor vibrator assembly.

The manufacture method of the transistor vibrator assembly of claim 9 is characterized in that, before cutting off operation or it After, pass pedestal from housing exterior with laser beam and focus on to the irradiation of crystal oscillator, make a part of vapour of crystal oscillator Change, the metal film that maybe will cover on the crystal oscillator removes a part, realizes thus the frequency of crystal oscillator Adjust.

Owing to adopt the high glass manufacture pedestal of transmission coefficient, after assembling, can carry out the frequency of crystal oscillator Adjust. Therefore, can carry out to the frequency characteristic of transistor vibrator assembly the control of high accuracy.

The manufacture method of the transistor vibrator assembly of claim 10 is characterized in that, the cutting of above-mentioned cut-out operation Disconnected, can fuse with laser beam, can break with diamond emery wheel mill, also can mechanical bending cut off.

With swash Shu Jinhang cut off can shorten cut off need to time or also can finish machinery with the bending machine of cheapness Cut off, but output is little, also can fracture by hand. Therefore, can reduce production costs.

The manufacture method of the transistor vibrator assembly of claim 11 is characterized in that, in above-mentioned forming process, When being shaped, run through a face of pedestal to another with the pin that is arranged on the finishing die in pedestal formation The through hole of individual face.

Because be provided with pin at finishing die, thus through hole can in forming process, be formed, and in routine techniques Be to form respectively operation and processing through hole operation, the present invention is merged above-mentioned two procedures one worker Be very economical in the order, it has reduced the processing operation.

The manufacture method of the transistor vibrator assembly of claim 12 is characterized in that, forms the worker at above-mentioned electrode In the order, above-mentioned conductive pieces is embedded in the through hole of pedestal, uses simultaneously the printing method outside pedestal forms connection The electrode that the electrode that section uses and connection crystal are used.

Adopt the printing method, in the short time, can form the good electrode of efficient. That is, adopt the present invention can shorten electricity The electrode that the utmost point forms operation forms the time, therefore can shorten the activity time that transistor vibrator assembly is made.

The manufacture method of claim 13 is with some Contiuum type punching presses by the pedestal of used for electronic element assembly Method is made with material glass, and processes simultaneously necessary through hole in punching press, connects the body punching at a procedure like this Press in the operation and just can obtain (the individual pedestal of m * n), so can especially boost productivity.

The manufacture method of claim 14 is characterized in that, material glass is being heated to its softening point temperature In the time of above, the junction of adjacent pedestal is processed into thinner than other parts. Because pedestal and pedestal are handed over The place of connecing processes thinlyyer than other parts, so realize easily the cut-out operation of postorder.

The manufacture method of claim 15 is characterized in that, the thickness of the junction of adjacent pedestal is 0.1～0.3mm. The thickness of pedestal and pedestal junction is processed into 0.3mm or thinner than it, just can fractures by hand. But, during little ground of the thickness 0.1mm of above-mentioned junction, can cause difficulty to processing, processing charges increase, therefore The thickness of pedestal junction is decided to be 0.1～0.3mm.

Claim 16 is characterised in that above-mentioned material glass is the low iron branch that iron-holder is no more than 3000ppm Glass. The low iron that adopts iron-holder to be no more than 3000ppm divides glass, and laser beam is fully passed through. If make With the many glass of iron-holder, laser can be absorbed by this kind glass, may cause pedestal to be melted, therefore without this Kind of glass is for well.

Claims

1, transistor vibrator assembly by pedestal, be installed in the quartz crystal unit on this pedestal and be used to seal the lid that this crystal shakes on said base and form, is characterized in that at least one is the moulding product made from glass in the base and cover.

2, according to the transistor vibrator assembly of claim 1, it is characterized in that, the gap of 50 μ m is set between said base and the above-mentioned quartz crystal unit at least.

3, according to the transistor vibrator assembly of claim 2, it is characterized in that,, recess is set on pedestal in order to ensure above-mentioned gap.

4, according to the transistor vibrator assembly of claim 1, it is characterized in that, on the outer surface of above-mentioned lid, cover electromagnetic shielding film at least.

5, according to the transistor vibrator assembly of claim 1, it is characterized in that, the electrode of connecting outside usefulness is set being provided with on the face of said base on the electrode connecting crystal and use, another face in said base, these connect the electrode that crystal use and electrodes of connecting outside usefulness are electrically connected by the conductive pieces that is embedded in the through hole, and above-mentioned quartz crystal unit is overlapped on connects on the electrode that logical crystal uses.

6, according to the transistor vibrator assembly of claim 1, it is characterized in that, the electrode of connecting outside usefulness is set on a face of said base, on another face of said base, be provided with and connect the electrode that crystal is used, the above-mentioned quartz crystal unit of overlap joint on the electrode that this connection crystal is used, and the electrode of the electrode and the connection crystal of the outside usefulness of above-mentioned connection being used with the metal parts that runs through said base is electrically connected.

7, according to the transistor vibrator assembly of claim 1, it is characterized in that, the electrode of connecting outside usefulness is set on a face of said base, makes the metal parts that runs through said base connect the electrode of the outside usefulness of above-mentioned connection, and from another face of said base stretch out above-mentioned metal parts, the direct above-mentioned quartz crystal unit of overlap joint on the front end face of this extension.

8, the manufacture method of transistor vibrator assembly is characterized in that comprising following program:

Forming process, material glass is placed between the upper and lower mould of finishing die, this material glass is heated to it more than softening point temperature, and glass plate of press molding, the various connected pedestal that the vertical m of press molding * horizontal n transistor vibrator assembly is used on an above-mentioned glass plate;

Electrode forming process, conductive pieces from a face to another face is set on each pedestal that obtains, forms the electrode of the outside usefulness of connection that is connected electrically on above-mentioned those conductive pieces respectively and connect the electrode that crystal is used on another face at a face of pedestal;

Crystal overlap joint operation overlaps quartz crystal unit on the electrode that the connection crystal that forms is used;

Sealing process for sealing above-mentioned quartz crystal unit, will cover on said base;

Cutting off operation, with an above-mentioned glass plate, is that unit cuts into m * n transistor vibrator assembly with the said base.

9, the manufacture method of transistor vibrator assembly according to Claim 8, it is characterized in that, before or after above-mentioned cut-out operation, passing pedestal from the assembly outside with laser beam focuses on to the quartz crystal unit irradiation, make the part evaporation of quartz crystal unit, or topped metal film on quartz crystal unit removed a part, carry out adjustment thus to the frequency of quartz crystal unit.

10, the manufacture method of transistor vibrator assembly according to Claim 8 is characterized in that, the cut-out of above-mentioned cut-out operation can rub with laser beam fusing or with skive, also can cut off with the bending of machinery.

11, the manufacture method of transistor vibrator assembly according to Claim 8 is characterized in that, in above-mentioned forming process, when being shaped, forms a face the running through pedestal through hole to another face with being arranged on pin on the described finishing die on pedestal.

12, the manufacture method of transistor vibrator assembly according to Claim 8, it is characterized in that, in above-mentioned electrode forming process, above-mentioned conductive pieces is embedded in the through hole that connects formation in pedestal, on pedestal, form the electrode of connecting outside usefulness and connect the electrode that crystal is used with print process simultaneously.

13, the manufacture method of several connected glass plates of used for electronic element assembly, when m, n are integer more than 1, the pedestal that to indulge several used for electronic element assembly of m * horizontal n is arranged in chocolate tabular, it is characterized in that, between the upper and lower mould of finishing die, put into material glass, this material glass is heated to it more than softening point temperature, in press molding, with the pin that is arranged on the finishing die, on above-mentioned each pedestal, process through hole simultaneously.

14, according to the manufacture method of several connected glass plates of the used for electronic element assembly of claim 13, it is characterized in that, material glass is heated to its more than softening point temperature in, the junction of adjacent pedestal is processed into thinner than other parts.

15, according to the manufacture method of several connected glass plates of the used for electronic element assembly of claim 14, it is characterized in that the thickness of the junction of adjacent pedestal is 0.1～0.3mm.

According to the manufacture method of several connected glass plates of claim 13,14 or 15 used for electronic element assembly, it is characterized in that 16, above-mentioned material glass is that the low iron that iron-holder is no more than 3000ppm divides glass.