CN1348217A - 一种半导体装置及其形成方法 - Google Patents
一种半导体装置及其形成方法 Download PDFInfo
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- CN1348217A CN1348217A CN01141226A CN01141226A CN1348217A CN 1348217 A CN1348217 A CN 1348217A CN 01141226 A CN01141226 A CN 01141226A CN 01141226 A CN01141226 A CN 01141226A CN 1348217 A CN1348217 A CN 1348217A
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- semiconductor device
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- raceway groove
- silicon
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- 238000003860 storage Methods 0.000 claims abstract description 10
- 239000013078 crystal Substances 0.000 claims description 34
- 210000000746 body region Anatomy 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 18
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- 238000009792 diffusion process Methods 0.000 claims description 16
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- 238000002955 isolation Methods 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 7
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- 239000011810 insulating material Substances 0.000 claims description 3
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- 229920005591 polysilicon Polymers 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 9
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
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- 229910021332 silicide Inorganic materials 0.000 description 4
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
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- 229910052739 hydrogen Inorganic materials 0.000 description 2
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- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 1
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- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
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- 230000005611 electricity Effects 0.000 description 1
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- 238000009499 grossing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
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- 238000004321 preservation Methods 0.000 description 1
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- 125000006850 spacer group Chemical group 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0387—Making the trench
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (28)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/689,096 | 2000-10-12 | ||
US09/689,096 US6350653B1 (en) | 2000-10-12 | 2000-10-12 | Embedded DRAM on silicon-on-insulator substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1348217A true CN1348217A (zh) | 2002-05-08 |
CN1173404C CN1173404C (zh) | 2004-10-27 |
Family
ID=24767022
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB011412267A Expired - Fee Related CN1173404C (zh) | 2000-10-12 | 2001-10-10 | 一种半导体装置及其形成方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US6350653B1 (zh) |
EP (1) | EP1199745B1 (zh) |
JP (1) | JP4074451B2 (zh) |
KR (1) | KR100458772B1 (zh) |
CN (1) | CN1173404C (zh) |
SG (1) | SG108827A1 (zh) |
TW (1) | TW538535B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105144585A (zh) * | 2013-03-07 | 2015-12-09 | 吉林克斯公司 | 具有存储器的集成电路装置以及实施集成电路装置中的存储器的方法 |
CN105977256A (zh) * | 2016-06-15 | 2016-09-28 | 武汉新芯集成电路制造有限公司 | 一种dram 器件的制备方法 |
Families Citing this family (102)
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FR2795866B1 (fr) * | 1999-06-30 | 2001-08-17 | Commissariat Energie Atomique | Procede de realisation d'une membrane mince et structure a membrane ainsi obtenue |
US6350653B1 (en) * | 2000-10-12 | 2002-02-26 | International Business Machines Corporation | Embedded DRAM on silicon-on-insulator substrate |
US6413857B1 (en) * | 2001-04-02 | 2002-07-02 | Advanced Micro Devices, Inc. | Method of creating ground to avoid charging in SOI products |
TW540154B (en) * | 2001-06-04 | 2003-07-01 | Promos Technologies Inc | Deep trench capacitor structure and its manufacturing method |
TWI230392B (en) * | 2001-06-18 | 2005-04-01 | Innovative Silicon Sa | Semiconductor device |
US6553561B2 (en) * | 2001-08-02 | 2003-04-22 | International Business Machines Corporation | Method for patterning a silicon-on-insulator photomask |
JP4322453B2 (ja) * | 2001-09-27 | 2009-09-02 | 株式会社東芝 | 半導体装置およびその製造方法 |
US6885080B2 (en) * | 2002-02-22 | 2005-04-26 | International Business Machines Corporation | Deep trench isolation of embedded DRAM for improved latch-up immunity |
EP1355316B1 (en) * | 2002-04-18 | 2007-02-21 | Innovative Silicon SA | Data storage device and refreshing method for use with such device |
EP1357603A3 (en) * | 2002-04-18 | 2004-01-14 | Innovative Silicon SA | Semiconductor device |
US6750097B2 (en) | 2002-07-30 | 2004-06-15 | International Business Machines Corporation | Method of fabricating a patterened SOI embedded DRAM/eDRAM having a vertical device cell and device formed thereby |
AU2003202254A1 (en) * | 2003-01-08 | 2004-08-10 | International Business Machines Corporation | High performance embedded dram technology with strained silicon |
US7085153B2 (en) * | 2003-05-13 | 2006-08-01 | Innovative Silicon S.A. | Semiconductor memory cell, array, architecture and device, and method of operating same |
US6912150B2 (en) * | 2003-05-13 | 2005-06-28 | Lionel Portman | Reference current generator, and method of programming, adjusting and/or operating same |
US20040228168A1 (en) * | 2003-05-13 | 2004-11-18 | Richard Ferrant | Semiconductor memory device and method of operating same |
US7073139B2 (en) * | 2003-06-03 | 2006-07-04 | International Business Machines Corporation | Method for determining cell body and biasing plate contact locations for embedded dram in SOI |
US6964897B2 (en) * | 2003-06-09 | 2005-11-15 | International Business Machines Corporation | SOI trench capacitor cell incorporating a low-leakage floating body array transistor |
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US7184298B2 (en) * | 2003-09-24 | 2007-02-27 | Innovative Silicon S.A. | Low power programming technique for a floating body memory transistor, memory cell, and memory array |
KR100541709B1 (ko) * | 2004-03-18 | 2006-01-11 | 매그나칩 반도체 유한회사 | 에스오아이 소자 제조방법 |
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US7301803B2 (en) * | 2004-12-22 | 2007-11-27 | Innovative Silicon S.A. | Bipolar reading technique for a memory cell having an electrically floating body transistor |
US7485910B2 (en) * | 2005-04-08 | 2009-02-03 | International Business Machines Corporation | Simplified vertical array device DRAM/eDRAM integration: method and structure |
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- 2001-09-25 KR KR10-2001-0059192A patent/KR100458772B1/ko not_active IP Right Cessation
- 2001-09-28 JP JP2001300150A patent/JP4074451B2/ja not_active Expired - Fee Related
- 2001-10-01 SG SG200106036A patent/SG108827A1/en unknown
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- 2001-10-10 CN CNB011412267A patent/CN1173404C/zh not_active Expired - Fee Related
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Cited By (3)
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CN105144585A (zh) * | 2013-03-07 | 2015-12-09 | 吉林克斯公司 | 具有存储器的集成电路装置以及实施集成电路装置中的存储器的方法 |
CN105144585B (zh) * | 2013-03-07 | 2018-08-17 | 吉林克斯公司 | 具有存储器的集成电路装置以及实施集成电路装置中的存储器的方法 |
CN105977256A (zh) * | 2016-06-15 | 2016-09-28 | 武汉新芯集成电路制造有限公司 | 一种dram 器件的制备方法 |
Also Published As
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JP4074451B2 (ja) | 2008-04-09 |
US6590259B2 (en) | 2003-07-08 |
CN1173404C (zh) | 2004-10-27 |
TW538535B (en) | 2003-06-21 |
EP1199745A2 (en) | 2002-04-24 |
US6350653B1 (en) | 2002-02-26 |
US20020064913A1 (en) | 2002-05-30 |
SG108827A1 (en) | 2005-02-28 |
KR20020029300A (ko) | 2002-04-18 |
JP2002134631A (ja) | 2002-05-10 |
EP1199745B1 (en) | 2013-08-07 |
KR100458772B1 (ko) | 2004-12-03 |
EP1199745A3 (en) | 2007-02-21 |
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