CN1338830A - Array-type integrated sensor based on weak-light electromechanical system for emitting or receiving laser - Google Patents
Array-type integrated sensor based on weak-light electromechanical system for emitting or receiving laser Download PDFInfo
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- CN1338830A CN1338830A CN01141614A CN01141614A CN1338830A CN 1338830 A CN1338830 A CN 1338830A CN 01141614 A CN01141614 A CN 01141614A CN 01141614 A CN01141614 A CN 01141614A CN 1338830 A CN1338830 A CN 1338830A
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- laser
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- photodetector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/4809—Loop shape
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Abstract
An array-type integrated sensor based on micro photo-mechano-electric system for receiving and transmitting laser is composed of frame, substrate, monosilicon structure body, semiconductor laser device, photoelectric detector, and glass. The micro semiconductor laser devices and micro semiconductor detectors are integrated on a substrate by special monosilicon structure body. The semiconductor laser transmitting and receiving cells are alternatively arranged.
Description
Technical field:
The present invention relates to a kind of array laser transmitting-receiving integrated sensor based on Micro-Opto-Electro-Mechanical Systems, be particularly related to the making and the application of the array laser transmitting-receiving transducer that is used for laser space communication, belong to the photoelectric sensor field with sense judgement and controlled function.
Background technology:
The space communication of laser is one of focus of the research of laser communication at present both at home and abroad, and it is widely used between sea, aerial traffic control, satellite spatial communication, motion many fields such as target identification.The emission of laser and sensitive detection parts are the Primary Components in the laser communication system, are one of focuses of domestic and international laser communication area research always.But adopt discrete Laser emission and sensitive detection parts to have shortcomings such as volume is big, complex structure, cost height at present.Therefore, develop the attention that a kind of integrated miniature array laser sending and receiving device is subjected to domestic and international professional person day by day.
Laser emission and receiving equipment that space communication is at present used generally are made of discrete device, and laser transmitting set comprises laser, Laser Modulation equipment and Direction Control Aid etc.; Receiving equipment comprises photoelectric sensor, signal handling equipment and laser direction judgment means etc.Generally speaking, have the bi-directional communication function communication system, the both sides of its communication have the discrete communication equipment of identical in structure.Its operation principle is described below as shown in Figure 1:
The laser that is sent by laser has been added the communication information through quilt behind the modulating equipment, launches to required direction by Direction Control Aid again.Laser signal arrives receiving equipment after atmospheric channel transmits a segment distance.The receiving equipment of receiving terminal utilizes photoelectric sensor that laser signal is converted into the signal of telecommunication, and utilize the direction judgment device that the direction of incoming signal is judged simultaneously, carry out the integrated treatment of signal through signal processing circuit, be sent to master computer, by master computer received communication message code, and come the FEEDBACK CONTROL Direction Control Aid according to the incident light directional information, to guarantee the unimpeded continuously of space optical communication passage.As seen, the structure of the laser space communication system that the discrete communication equipment of this employing is realized is extremely complicated, can't realize microminiaturization.
Summary of the invention:
The objective of the invention is to design a kind of array laser transmitting-receiving integrated sensor based on Micro-Opto-Electro-Mechanical Systems, simplify the structure of transducer, on the basis of this transducer, only need increase an optical lens simply, and be equipped with the communication function that a simple control circuit just can be realized the prior art complexity fully, and its structure is much simpler than the separate structure of prior art, and has the integrated characteristics of tangible height.
The array laser transmitting-receiving integrated sensor based on Micro-Opto-Electro-Mechanical Systems of the present invention's design, its characteristics are, this integrated sensor comprises framework, substrate, monocrystal silicon structure body, semiconductor laser, photodetector and sheet glass, described monocrystal silicon structure body is cellular flat board, semiconductor laser and photodetector space are staggered in the cellular through hole that rectangular array places the monocrystal silicon structure body, and the monocrystal silicon structure body combines by the pad and the substrate of semiconductor laser and photodetector bottom.Substrate places base of frame, and sheet glass links to each other with the pad of monocrystal silicon structure body upper surface by its lower surface pad.The upper surface periphery of the top periphery of framework and sheet glass interconnects.Around described substrate, be distributed with pad; Semiconductor laser and photodetector link by the pad of its bottom and the pad around horizontal lead and the substrate respectively.The both sides that the lower surface of described sheet glass is relative are distributed with pad, and this pad is connected by the pad of vertical lead with monocrystal silicon structure body upper surface; The top electrode of laser and photodetector is connected by the respective pad of connecting line with monocrystal silicon structure body upper surface.
In the sensor, the cellular through-hole side wall of monocrystal silicon structure spare is the inclined-plane, and is coated with metallic reflective coating.
Semiconductor laser and photodetector are staggered in the sensor, promptly are photodetector around each laser, are laser around each photodetector.
The transducer of the present invention's design adopts three layers of ray machine electricity structural member bonding or gummed principle, and semiconductor laser and photodetector base are become equally spaced array laser transmitting-receiving integrated sensor.Main feature of the present invention is, by micromachined and micromechanics mounting technique, micro semiconductor laser reflector and micro semiconductor detector are integrated on same pottery or the reasonable substrate of other heat conductivility by special monocrystal silicon structure spare, form an integrated device.Semiconductor laser transmits and receives the unit and becomes to be staggered, that is: each laser emission element around be the laser pick-off unit, and each laser pick-off unit around be laser emission element, so formation has the array laser transmitting-receiving integrated sensor of laser pick-off and emission function simultaneously.The array element number can design according to actual needs, and the spacing size between 2 adjacent array elements is determined by the size the greater in selected micro semiconductor laser device and the micro semiconductor detector, and calculates acquisition according to simple geometric.According to present micro element manufacturing technology level, be semiconductor laser and the detector of 300 * 300 * 100 μ m if select overall dimension, the spacing between 2 adjacent array elements can be accomplished at least less than 1000 μ m.
Main innovation part of the present invention is:
With three layers of ray machine electricity structural member bonding or gummed integration principle, micro semiconductor laser device and micro semiconductor detector are integrated into equally spaced array laser transmitting-receiving integrated sensor, make this integrated device have the laser transmitting-receiving function simultaneously, and each unit of this integrated device can independent gating and control.In the open source literature that can consult, do not see the report of this similar technology as yet.
Based on These characteristics, Laser emission and receiving element in the array laser transmitting-receiving integrated sensor that the present invention proposes are staggered, that is: each laser emission element around be the laser pick-off unit, and each laser pick-off unit around be laser emission element.Each laser emission element and each laser pick-off unit can independent gating and controls in the array.
Based on These characteristics, adopt the monocrystalline silicon ramp structure, and on the inclined-plane plating reflectance coating, make the emission light direction of semiconductor laser can change about 90 degree (relevant) with the manufacturing angle on actual inclined-plane, this method of utilizing micro-structural to change laser Laser emission direction, in the open source literature that can consult, do not see the report of this similar technology as yet.
Based on above-mentioned every characteristics, the use of this device is very simple, is convenient to the miniaturized design and the manufacturing of laser space communication equipment.
Description of drawings:
Fig. 1 is the system configuration and the operation principle schematic diagram of conventional laser space communication devices.
Fig. 2 is the structural representation of the array laser transmitting-receiving integrated sensor that designs of the present invention.
Fig. 3 is the partial sectional view of Fig. 2.
Fig. 4 is the structural representation of the monocrystal silicon structure spare that uses in the transducer.
Fig. 5 is the cutaway view of Fig. 4.
Among Fig. 1～Fig. 5, the 1st, the outer package framework, the 2nd, bottom substrate, the 3rd, the monocrystal silicon structure body, the 4th, the micro semiconductor laser device, the 5th, the micro photo electric detector, the 6th, bottom substrate top edge pad, the 7th, the upper strata sheet glass, the 8th, the horizontal lead on the bottom substrate, the 9th, the electrode pad of upper strata sheet glass lower surface, the 10th, the electrode pad on the monocrystal silicon structure body, the 11st, carry out the transition to the connecting line of pad on the monocrystal silicon structure body from micro photo electric detector or micro semiconductor laser device, the 12nd, metallic reflective coating, the 13rd, the vertical lead on the sheet glass lower surface of upper strata, the 14th, the bottom-side electrodes pad of micro photo electric detector, the 15th, the bottom-side electrodes pad of micro semiconductor laser device, the 16th, the line between the electrode pad of upper strata sheet glass lower surface and the vertical lead.
Embodiment:
As shown in Figure 1, the array laser transmitting-receiving integrated sensor based on Micro-Opto-Electro-Mechanical Systems of the present invention's design comprises framework 1, substrate 2, monocrystal silicon structure body 3, semiconductor laser 4, photodetector 5 and sheet glass 7.Monocrystal silicon structure body 3 is cellular flat board, and semiconductor laser 4 and photodetector 5 spaces are staggered in the cellular through hole that rectangular array places the monocrystal silicon structure body.Monocrystal silicon structure body 3 combines by the pad 14,15 and the substrate 2 of semiconductor laser 4 and photodetector 5 bottoms.Substrate 2 places the bottom of framework 1, and sheet glass 7 links to each other with the pad 10 of monocrystal silicon structure body upper surface by the pad 9 of its lower surface.The upper surface periphery of the top periphery of framework 1 and sheet glass 7 interconnects.Be distributed with pad 6 around substrate 2, semiconductor laser 4 and photodetector 5 link with substrate pad 6 all around by the pad 15,14 and the horizontal lead 8 of its bottom respectively.The both sides that the lower surface of sheet glass 7 is relative are distributed with pad 9, and this pad is connected by the pad 10 of vertical lead 13 with monocrystal silicon structure body upper surface.The top electrode of laser and photodetector is connected by the respective pad 10 of connecting line 11 with monocrystal silicon structure body upper surface.
The characteristics of the transducer of the present invention design are: mainly assembled by three layers of microstructure part and constitute.The superiors are glass structure spares 7 of one deck band longitudinal electrode lead-out wire, and its major function is printing opacity and protection device, and the top electrode from each Elementary Function device of vertical derivation (generating laser and detector) goes between simultaneously.The intermediate layer is the monocrystal silicon structure layer 3 of shape more complicated, it on this one deck the pore structure that each laser and detector fabrication and installation are used, the sidewall of these installing holes is made into the inclined-plane, the desired angle of inclination angle of inclined plane is 45 degree, be that the natural angle of utilizing the crystal crystal orientation realizes (angle, typical crystal orientation as silicon materials is 54.7 °) generally speaking, and on the inclined-plane sputter layer of metal reflection layer 12.The main effect of this one deck is the exit direction of converted laser emission laser, promptly utilizes the inclined-plane that the laser that the laser of installing in the hole sends from the side is converted into vertical emitting laser by reflection.Bottom is pottery or the reasonable substrate layer 2 of other heat conductivility, the splash-proofing sputtering metal figure forms electrode 6,14,15 and lead 8 etc. on substrate, it mainly acts on is the bottom electrode that connects corresponding laser and detector bottom surface, and from the side lead is drawn transducer, utilize ceramic bases that laser is dispelled the heat simultaneously.Can adopt bonding or gummed to be fixed together between each layer, form integrated integral device.The top electrode of each unit component in the array (semiconductor laser or semiconductor detector) carries out the transition to the upper surface electrode pad 10 of middle level structural member by pressure welding and short fly line 11, link to each other with the corresponding electrode pad 9 on the sheet glass lower surface of upper strata, export to by vertical lead 13 on the edge pad of whole integrated device; The bottom electrode of each unit component exports on the edge pad of whole integrated device by horizontal lead 8.The structure of top electrode lead-in wire is extremely similar to the pin configuration of bottom electrode, and main difference is: top electrode goes between from vertically drawing, and the lead-in wire of bottom electrode is from laterally drawing.The size of the size of upper strata sheet glass top electrode pad 9 and position and bottom electrode pad 14,15 and position difference slightly in addition, this mainly is because upper strata sheet glass top electrode pad 9 need be avoided the discrepancy of each array element light.The top electrode of each row semiconductor laser links together in the array, and by vertically lead-in wire derivation; The bottom electrode of each row semiconductor laser links together in the array, and by laterally lead-in wire derivation; So just formed the laser matrix structure that can carry out gating control to any one individual devices wherein.The lead-in wire mode of the pin configuration of semiconductor detector and semiconductor laser is identical in the array, but independent fully with the lead-in wire of semiconductor laser.This pin configuration makes that each semiconductor laser and each semiconductor detector can complete independent gating and controls in the array.
The course of work of the present invention and operation principle are: can in synchronization several laser works of any selection certain or certain in transducer of the present invention, be modulated the emission laser modulation signal to laser by drive circuit according to the needs of application system.Laser sends from the side of micro semiconductor laser device, and the ramp structure of laser installing hole side is transmitted in the space laser signal to the reflection of laser on the process substrate.For laser signal, can select certain or certain several detectors to receive according to the current needs of application system equally from the space.Since the spacing very little (about 1000um) between semiconductor laser and the semiconductor detector, and be staggered arrangement, therefore be easy to utilize the space optical communication system of light path principle of reversibility foundation from the motion tracking communication object.
The structure embodiment of the array laser transmitting-receiving integrated sensor that the present invention proposes is as shown in Figure 2:
This array laser transmitting-receiving integrated sensor example is 12 row * 12 row, and the overall dimension size is 20mm * 20mm, and 72 lasers and 72 photodetectors can be installed altogether.Wherein the wavelength of semiconductor laser is 650nm, and power is 30mW, and the response time of photodetector is 10ns, 5mW/cm
2The time conducting electric current be 2uA.In this transducer, laser and photodetector are installed on the combining structure on upper strata quartz glass, middle level single-crystal-silicon micro mechanical structural member and the low layer ceramic substrate.The upper strata is a quartz glass structure.The middle level structure is processed through micromechanical process by silicon chip, 144 through holes that the side is 54.7 ° of inclined-planes on silicon chip, have been made, totally 12 row * 12 are listed as, laser and detector are installed therein, the thickness of middle level silicon chip is selected 350um, and can guarantee to launch through 54.7 ° of inclined-planes from the laser that semiconductor laser sends later on can be fully to space radiation.Bottom is a ceramic material, and thickness is 2mm, evaporation layer of metal electrode pattern on it.There is line to be communicated with between the laser of each row and each row and detector electrodes respectively, and line drawn from the both sides of upper strata and bottom.
Claims (3)
1, a kind of array laser transmitting-receiving integrated sensor based on Micro-Opto-Electro-Mechanical Systems is characterized in that this integrated sensor comprises framework, substrate, monocrystal silicon structure body, semiconductor laser, photodetector and sheet glass; Described monocrystal silicon structure body is cellular flat board, semiconductor laser and photodetector space are staggered in the cellular through hole that rectangular array places the monocrystal silicon structure body, and the monocrystal silicon structure body combines by the pad and the substrate of semiconductor laser and photodetector bottom; Described substrate places base of frame; Described sheet glass links to each other with the pad of monocrystal silicon structure body upper surface by the pad of its lower surface; The upper surface periphery of the top periphery of described framework and sheet glass interconnects; Be distributed with pad around described substrate, semiconductor laser and photodetector link by the pad of its bottom and the pad around horizontal lead and the substrate respectively; The both sides that the lower surface of described sheet glass is relative are distributed with pad, and this pad is connected by the pad of vertical lead with monocrystal silicon structure body upper surface; The top electrode of laser and photodetector is connected by the respective pad of connecting line with monocrystal silicon structure body upper surface.
2, transducer as claimed in claim 1 is characterized in that the cellular through-hole side wall of wherein said monocrystal silicon structure spare is the inclined-plane, and is coated with metallic reflective coating.
3, transducer as claimed in claim 1 is characterized in that wherein said semiconductor laser and photodetector are staggered, promptly is photodetector around each laser, is laser around each photodetector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN01141614A CN1131610C (en) | 2001-09-28 | 2001-09-28 | Array-type integrated sensor based on weak-light electromechanical system for emitting or receiving laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN01141614A CN1131610C (en) | 2001-09-28 | 2001-09-28 | Array-type integrated sensor based on weak-light electromechanical system for emitting or receiving laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1338830A true CN1338830A (en) | 2002-03-06 |
| CN1131610C CN1131610C (en) | 2003-12-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN01141614A Expired - Fee Related CN1131610C (en) | 2001-09-28 | 2001-09-28 | Array-type integrated sensor based on weak-light electromechanical system for emitting or receiving laser |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100386877C (en) * | 2002-07-23 | 2008-05-07 | 东南大学 | Parallel optical interconnecting integrated circuit chip |
| CN100414288C (en) * | 2005-07-27 | 2008-08-27 | 北京工业大学 | Miniature millimeter laser induced fluorescent detector for biological chip |
| CN100438027C (en) * | 2002-06-18 | 2008-11-26 | 精工爱普生株式会社 | Optical interconnecting integrated circuit, method for producing optical interconnecting integrated circuit, photoelectrical apparatus and electronic instrument |
| CN103954595A (en) * | 2007-07-12 | 2014-07-30 | 纳米识别技术股份公司 | Optoelectronic sensor system |
| CN106157942A (en) * | 2016-08-29 | 2016-11-23 | 四川文化艺术学院 | Laser MIDI marimba |
| CN109149355A (en) * | 2018-09-12 | 2019-01-04 | Oppo广东移动通信有限公司 | Light emitting mould group and its control method, TOF depth camera and electronic equipment |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102129106B (en) * | 2010-01-20 | 2013-07-10 | 智宝科技股份有限公司 | Optical module and manufacturing method thereof |
-
2001
- 2001-09-28 CN CN01141614A patent/CN1131610C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100438027C (en) * | 2002-06-18 | 2008-11-26 | 精工爱普生株式会社 | Optical interconnecting integrated circuit, method for producing optical interconnecting integrated circuit, photoelectrical apparatus and electronic instrument |
| CN100386877C (en) * | 2002-07-23 | 2008-05-07 | 东南大学 | Parallel optical interconnecting integrated circuit chip |
| CN100414288C (en) * | 2005-07-27 | 2008-08-27 | 北京工业大学 | Miniature millimeter laser induced fluorescent detector for biological chip |
| CN103954595A (en) * | 2007-07-12 | 2014-07-30 | 纳米识别技术股份公司 | Optoelectronic sensor system |
| CN106157942A (en) * | 2016-08-29 | 2016-11-23 | 四川文化艺术学院 | Laser MIDI marimba |
| CN109149355A (en) * | 2018-09-12 | 2019-01-04 | Oppo广东移动通信有限公司 | Light emitting mould group and its control method, TOF depth camera and electronic equipment |
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| Publication number | Publication date |
|---|---|
| CN1131610C (en) | 2003-12-17 |
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