CN1330287A - Attenuated phase shift mask and method of making the same - Google Patents
Attenuated phase shift mask and method of making the same Download PDFInfo
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- CN1330287A CN1330287A CN 00113046 CN00113046A CN1330287A CN 1330287 A CN1330287 A CN 1330287A CN 00113046 CN00113046 CN 00113046 CN 00113046 A CN00113046 A CN 00113046A CN 1330287 A CN1330287 A CN 1330287A
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- phase shift
- shifting mask
- phase
- attenuated phase
- photoresist
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- 230000002238 attenuated effect Effects 0.000 title claims abstract description 36
- 230000010363 phase shift Effects 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims abstract description 15
- 239000002356 single layer Substances 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000010453 quartz Substances 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 13
- 239000003292 glue Substances 0.000 claims description 11
- 238000002474 experimental method Methods 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 21
- 238000004140 cleaning Methods 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 238000000643 oven drying Methods 0.000 abstract 1
- 238000011161 development Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000004304 visual acuity Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000013016 damping Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
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- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention discloses an attenuation phase shift mask with a single-layer film structure and a manufacturing method thereof. The attenuating phase shift mask is a single layer film formed of a photoresist film layer on a substrate that satisfies both attenuation rate and phase shift requirements. The manufacture method comprises uniformly coating photoresist on transparent substrate such as glass or quartz to form attenuation phase shift film layer, making into single-layer film structure attenuation phase shift mask substrate, exposing, developing, cleaning, and oven drying to obtain practical attenuation phase shift mask with pattern. The attenuation phase shift mask has the advantages of simple structure, easy manufacture and low cost. The use of the attenuated phase shift mask can significantly improve the lithographic resolution.
Description
The present invention relates in the large scale integrated circuit manufacturing process to make used mask of Fine photoetching figure and preparation method thereof, relate in particular to a kind of attenuated phase-shifting mask of the single-layer membrane structure that constitutes with the photoresist film layer and the method for making of this mask.
Along with the continuous development of large scale integrated circuit, Micropicture requires more and more higher figure resolving power.Adopt the phase shifting mask technology on the basis of existing lithographic equipment, to improve the resolving power of litho pattern effectively.The kind of phase shifting mask has multiple, the type that research is in advance made has Levenson alternate type, chromium-less, edge type etc., the phase shifting mask of these types can only be applicable to dissimilar figures respectively, and all needs special manufacturing method, therefore exists application limitation.
Development in recent years a kind of attenuation type phase shifting mask, though can be suitable for various figures, attenuated phase-shifting mask in advance is made of double-decker, promptly successively makes two membranes on substrate, wherein a skim is controlled degree of phase shift as phase shift layer, and another tunic is controlled transmitance as damping layer.As half-tone type (the being attenuation type) phase shifting mask of announcing among the Chinese patent CN1115408A, be exactly this type.The shortcoming that this double-deck attenuated phase-shifting mask exists is a complex structure, makes relatively difficulty.
SPIE, Vol.2254, the Yoshihiro Saito of 60-63 page or leaf publication provides attenuated phase-shifting mask of a kind of single layer structure and preparation method thereof in people's such as Susumu Kawada the article " Attenuated phase shift mask blanks with Oxide orOxi-nitride of Cr or Mosi absorptive shifter ".This mask adopts the rete of materials such as CrO, CrON as the attenuated phase-shifting mask of single layer structure, the monofilm of these materials plays phase shift layer and damping layer simultaneously, reach certain phase shift (180 degree or its odd-multiple) by the controlling diaphragm layer thickness, reach purpose simultaneously with certain transmitance (5～20%) decay light intensity.The manufacturing process of the attenuated phase-shifting mask of this single layer structure is owing to the sputter coating process that will relate to materials such as CrO, CrON, so its method for making more complicated.
Fig. 1 is the typical process flow figure (is example with the CrO rete) of this monofilm attenuated phase-shifting mask method for making, and its step is as follows:
Select different materials for use according to different exposure wavelengths, prepare substrate as slidies such as glass or quartz;
The argon gas and the oxygen that in the sputter chrome-plating process, add proper proportion and pressure, control the refractive index n and the extinction coefficient k of CrO film by technological parameters such as control sputtering current, gas pressure intensity, gas delivery volumes, make certain thickness CrO rete, make it satisfy the requirement of degree of phase shift and transmitance simultaneously;
Even glue on the CrO rete, preceding again baking is handled;
Exposure, development and cleaning;
Corrosion and cleaning;
Remove photoresist and clean, at last the oven dry.
The shortcoming of this method is to need corresponding sputtering coating equipment and be equipped with film material in advance, and equipment and technology is more complicated all, and the cycle is longer, and cost is higher.
The object of the present invention is to provide a kind of simple in structurely, make easily the monofilm attenuated phase-shifting mask that cost is low and the method for making of this mask.
Purpose of the present invention can realize by following technical measures:
Attenuated phase-shifting mask comprises substrate and satisfies attenuation rate on it simultaneously and the monofilm of degree of phase shift requirement that the material of monofilm is the photoresist of selecting for use.
In order to make this attenuated phase-shifting mask, manufacture method of the present invention comprises following several steps:
Select slidies such as glass or quartz to make substrate according to exposure wavelength;
To several experiment substrates, is that 180 degree and the several different thicknesses of layers values of odd-multiple thereof make actual even glue by the phase-shift value that calculates with the photoresist of selecting for use, forms the monofilm that plays decay and phase shift effect simultaneously;
Measure the transmitance of the resist monofilm of the experiment substrate behind the even glue in the sixth of the twelve Earthly Branches, as far as possible little according to value in transmitance is 5～20% allowed band, and the condition that can evenly apply, determine the optimum thickness of resist monofilm;
Press the even glue of optimum thickness on formal substrate, preceding again baking is handled, and makes the attenuated phase-shifting mask substrate;
To attenuated phase-shifting mask base plate exposure, development, cleaning, oven dry, be made into the attenuated phase-shifting mask of the practicality of figure.
Compared with the prior art the present invention has following characteristics:
Because the present invention selects photoresist commonly used material as the monofilm of making attenuated phase-shifting mask for use, selects material monofilms such as CrO, CrON for use than former attenuated phase-shifting mask, material cost is reduced.And the method for making of mask is also greatly simplified, because do not re-use materials such as CrO, CrON, manufacturing process has just been saved original sputter coating process, and technology cost of manufacture of the present invention is reduced.The present invention so saved expensive filming equipment, greatly reduces equipment cost owing to only use general sol evenning machine.And, on mask graph is made, only need after the exposure through developing and clean and oven dry, saved corrosion and the cleaning after the exposure and remove photoresist and clean twice technology than former method, make graphic making technology simple, cost is low.This method on the fabrication cycle than before method obviously shorten, throughput rate is improved.
The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.
Fig. 1 is the typical process flow figure (is example with the CrO rete) that makes attenuated phase-shifting mask of existent method.
Fig. 2 is the typical process flow figure that makes attenuated phase-shifting mask of method of the present invention.
An exemplary embodiments of the present invention is the attenuated phase-shifting mask that deep ultraviolet KrF excimer laser (wavelength is 248 nanometers) photoetching is used.This attenuated phase-shifting mask comprises suprasil substrate and even coating photoresist rete thereon.The degree of phase shift that the thickness of this photoresist rete satisfies incident light is 180 degree or its odd-multiple, and the transmitance scope is 5～20% condition.
The step of the method for making of this mask is as follows:
At first, select quartzy slide to make the substrate of attenuated phase-shifting mask.
Then, calculate even glue thickness as the photoresist rete of attenuated phase-shift layer:
Adopt S1400-17 type photoresist as the attenuated phase-shift layer on the quartz substrate, utilize formula
(in the formula, d: the thickness of photoresist rete;
λ: the wavelength of photolithographic exposure light source is wavelength 248 nanometers of KrF excimer laser herein;
N: the refractive index of photo anti-corrosion agent material, be that S1400-17 section bar material is to 248 nanometers this moment
The refractive index 1.8351 of laser;
(2m+1): the multiplying power of the basic thickness of rete, desirable m=0,1,2,3 ...,
When m=0, d
oThe basic thickness of=180 ° of phase shifts,
Work as m=1,2,3 ... the time, d=d
oThe thickness of odd-multiple.) when calculating 180 ° of phase shifts (m=0), the basic thickness of resist rete is 148.5 nanometers, gets m=1 again, 2,3 ... calculate several thicknesses of layers values, respectively several experiment substrates are spared glue by calculated value.
The 3rd, measure the transmitance of the even glue resist layer of each experiment substrate, in transmitance is 5～20% scope, as far as possible little according to value, and the condition that can evenly apply, determine that phase-shift value is 3 times of 180 degree, promptly the resist film layer thickness is that 445.5 nanometers (at this moment, the resist rete is 5.6% to the transmitance of wavelength 248 nanometer lasers) are the even glue thickness of the best of resist rete.
On quartz substrate, evenly apply S1400-17 type photoresist by this optimum thickness,, form the attenuated phase-shifting mask substrate again through preceding baking with sol evenning machine.
With the mask graph of laser direct-writing method the resist rete on the attenuated phase-shifting mask substrate is exposed according to design.
After development, cleaning and dry, make the attenuated phase-shifting mask that figure is arranged that photoetching is used again.
This attenuated phase-shifting mask is used for the actual photolithographic exposure that carries out of KrF excimer laser reduced projection lithographic equipment, and adopting numerical aperture is 0.29, the design resolving power is 0.5 micron a projection objective, and it is 0.25 micron figure that photoetching has drawn live width.As seen significantly improved photolithography resolution after adopting the photoresist attenuated phase-shifting mask.
Claims (2)
1. an attenuated phase-shifting mask is characterized by with on-chip photoresist rete formation single-layer membrane structure.The photoresist rete of this single-layer membrane structure plays decay and phase shift simultaneously to incident light, and the condition that the thickness of photoresist rete should satisfy is: the transmitance that makes incident light is 5～20%; Degree of phase shift is 180 degree or its odd-multiple.
2. method of making the described attenuated phase-shifting mask of claim 1 is characterized in that adopting the following step:
Select material transparent substrates such as glass or quartz according to exposure wavelength;
Respectively to several experiment substrates, is that 180 degree and the several different thicknesses of layers values of odd-multiple thereof make actual even glue by the phase-shift value that calculates with the photoresist of selecting for use, forms the monofilm that incident light is played simultaneously decay and phase shift effect;
Measure the transmitance of the resist monofilm of the experiment substrate behind the even glue, as far as possible little according to value in transmitance is 5～20% allowed band, and the condition that can evenly apply, determine the optimum thickness of resist monofilm;
On formal substrate, press the even glue of optimum thickness, handle through preceding baking again, make the attenuated phase-shifting mask substrate with the photoresist of selecting;
To the attenuated phase-shifting mask base plate exposure, develop, clean, after the oven dry, make the practical attenuated phase-shifting mask of figure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00113046 CN1330287A (en) | 2000-06-21 | 2000-06-21 | Attenuated phase shift mask and method of making the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00113046 CN1330287A (en) | 2000-06-21 | 2000-06-21 | Attenuated phase shift mask and method of making the same |
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| Publication Number | Publication Date |
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| CN1330287A true CN1330287A (en) | 2002-01-09 |
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| CN 00113046 Pending CN1330287A (en) | 2000-06-21 | 2000-06-21 | Attenuated phase shift mask and method of making the same |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102129165B (en) * | 2010-01-15 | 2012-12-05 | 中芯国际集成电路制造(上海)有限公司 | Attenuation phase shift mask |
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- 2000-06-21 CN CN 00113046 patent/CN1330287A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102129165B (en) * | 2010-01-15 | 2012-12-05 | 中芯国际集成电路制造(上海)有限公司 | Attenuation phase shift mask |
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