CN1322006A - Growth method of gallium nitride series compound semiconductor with amorphous and polycrystalline structure - Google Patents
Growth method of gallium nitride series compound semiconductor with amorphous and polycrystalline structure Download PDFInfo
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- CN1322006A CN1322006A CN00106194A CN00106194A CN1322006A CN 1322006 A CN1322006 A CN 1322006A CN 00106194 A CN00106194 A CN 00106194A CN 00106194 A CN00106194 A CN 00106194A CN 1322006 A CN1322006 A CN 1322006A
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Abstract
The growing method of gallium nitride series compound semiconductor with amorphous and polycrystal structure includes the following steps: vapor-phase growing first amophous and/or polycrystal compound semiconductor layer, its structure components are InxAly Ga(1-x-y)N, thickness is 1.00 angstron -10.00 micrometer, growing temp. is first temp. 180-1100 deg.C; on the first amorphous and/or polycrystal semiconductor layer vapor-phase growing first additional amorphous and/or polycrystal compound semiconductor layer whose structure components are identical to that of first amorphous and/or polycrystal semiconductor layer. It has the advantages of low cost and high quality.
Description
The present invention relates to semiconductor, refer in particular to a kind of growth method of gallium nitride series compound semiconductor of noncrystalline and polycrystalline structure.
As everyone knows, compound semiconductor element is having been widely used aspect communication and the display, in recent years owing to demand to blue light source, gallium nitride-based III-V group compound semiconductor (GaN based III-V compound semiconductordevice) is owing to be direct energy source, and have the energy source range of 2.0-6.4eV, so become the emphasis of research and development especially.The general main composition of gallium nitride-based III-V group compound semiconductor is InGaN, aluminium gallium nitride alloy and aluminum indium nitride gallium.
Proposed by Japanese Nichia company, U.S. Patent No. 5,563,422 patents disclose a kind of gallium nitride-based III-V group compound semiconductor manufacture method, it clearly uses the mono-crystal gallium nitride based III-V group compound semiconductor to make light-emittingdiode, has cost height and the low problem of acceptance rate yet use the mono-crystal gallium nitride based compound semiconductor to make element.
The object of the present invention is to provide a kind of gallium nitride-based III-V group compound semiconductor to make, to improve acceptance rate.
For reaching this purpose, the present invention discloses the noncrystalline of a kind of gallium nitride compound semiconductor and/or polycrystalline structure growing method, has the advantage of low-cost and high acceptance rate.
For reaching this purpose, the growth method of gallium nitride series compound semiconductor of the noncrystalline and polycrystalline structure that the present invention discloses comprises the following step:
(1) the vapour phase first noncrystalline and/or polycrystalline structure compound semiconductor layer of growing up has constituent InAIGaN, and thickness is 0.0001-10.00 μ m, and the growth temperature is the first temperature 180-1100 ℃;
(2) on the first noncrystalline and/or polycrystal semiconductor layer, vapour phase the growth first extra noncrystalline and/or polycrystalline compounds semiconductor layer, have and the first noncrystalline and/or polycrystal semiconductor layer same structure composition, but stoichiometric number (stoichiometry) can be different; Thickness is 1.00 -10.00 μ m, and the growth temperature is the second temperature 180-1200 ℃.
Moreover the noncrystalline and/or polycrystalline structure growing method of gallium nitride compound semiconductor of the present invention can comprise the following step again:
On the first extra noncrystalline and/or polycrystalline compounds semiconductor layer, the vapour phase one second noncrystalline and/or polycrystalline compounds semiconductor layer of growing up, have and the first or first extra Twenty-two points, plus triPle-word-score, Plusfifty points for using all my letters.Game’s?over.I’m?outta?here。Noncrystalline and/or polycrystalline compounds semiconductor layer same structure composition, the growth temperature is the 3rd temperature, it is than low 5-100 ℃ of second temperature;
On the second noncrystalline and/or polycrystalline compounds semiconductor layer, the vapour phase one second extra noncrystalline and/or polycrystalline compounds semiconductor layer of growing up, have and first or the first extra noncrystalline and/or polycrystalline compounds semiconductor layer same structure composition, the growth temperature is than the high 5-100 of the 3rd temperature ℃.
The present invention is further described below in conjunction with preferred embodiment and accompanying drawing.
Fig. 1 is the no part organigram that the method for embodiments of the invention 1 is made;
Fig. 2 is the no part organigram that the method for embodiments of the invention 2 is made.
Embodiment 1
Consult Fig. 1, a noncrystalline element structure made from the growth method of gallium nitride series compound semiconductor of polycrystalline structure of the present invention is for (base material can use sapphire, gallium nitride, silicon on a base material 10, carbonization silicon or GaAs), available the vapour phase first noncrystalline and/or polycrystalline compounds semiconductor layer 100 of growing up has constituent In
xAl
yGa
(1-x-y)N, 0.0000≤x wherein, y≤1.000, (x+y)≤1.0000, thickness is 1.00 -10.00 μ m, the growth temperature is the first temperature 180-1100 ℃; And on the first noncrystalline and/or polycrystal semiconductor layer 100, the vapour phase one first extra noncrystalline and/or polycrystalline compounds semiconductor layer 102 of growing up, have and the first noncrystalline and/or polycrystal semiconductor layer 100 same structure compositions, but stoichiometric number (stoichiometry) can be different, thickness is 0.0005-100.00 μ m, and the growth temperature is the second temperature 180-1200 ℃.Can add P type and N type impurity respectively on the first noncrystalline and/or polycrystalline compounds semiconductor layer 100 and the first extra noncrystalline and/or polycrystalline compounds semiconductor layer 102, impurity concentration is 10
14-22EA/cm
3,, can be made into rectifier, light-emittingdiode or device for testing light element to form diode structure.Or can add I type impurity, impurity concentration is 10
14-22EA/cm
3, to form resistance function semiconductor layer.
Wherein p type impurity can be zinc, magnesium, beryllium, strontium and/or cadmium.N type impurity can be silicon, germanium, tin, sulphur, hoof and/or selenium.And after adding impurity, can carry out temperature 601.0-1200 ℃, 1-50 minute heating, annealing or electron beam sequence of fire (electron-beam shooting).
Vapour phase growth gas comprises the front three ammonia aluminium (trimethylaluminum) that ammonia (ammonia) or hydrazine gas (hydrazine) or ammonia combine with hydrazine in addition, and adds trimethyl gallium (trimethyl gallium) and/or triethyl-gallium (triethyl gallium).Or vapour phase growth gas comprises the diethyl zinc (diethyl-zinc) that mixes the back use, trimethyl zinc (trimethyl-zinc), trimethyl indium (trimethyl-indium), cyclopentadienyl group magnesium (cyclopentadienyl-magnesium).
Embodiment 2
Consult Fig. 2, noncrystalline another component structure made from the growth method of gallium nitride series compound semiconductor of polycrystalline structure of the present invention is for (base material can use sapphire on a base material 10, gallium nitride, silicon, carbonization silicon or GaAs), available the vapour phase one first noncrystalline and/or polycrystalline compounds semiconductor layer 100 of growing up has constituent In
xA1
yGa
(1-x-y)N, 0.0000≤x wherein, y≤1.000, (x+y)≤1.0000, thickness is 1.00 -10.00 μ m, the growth temperature is the first temperature 180-1100 ℃; And first noncrystalline and/or polycrystal semiconductor layer 100 Shanghai Automobile Factory grow up mutually one first extra noncrystalline and or polycrystalline compounds semiconductor layer 102, have and the first noncrystalline and/or polycrystal semiconductor layer 100 same structure compositions, but stoichiometric number (stoichiometry) can be different; Thickness is 1.00 -10.00 μ m, and the growth temperature is the second temperature 180-1200 ℃.On the first extra noncrystalline and/or polycrystalline compounds semiconductor layer 102, the vapour phase one second noncrystalline and/or polycrystalline compounds semiconductor layer 200 of growing up, have and the first noncrystalline and/or polycrystalline compounds semiconductor layer 100 same structure compositions, the growth temperature is the 3rd temperature, and it is than low 5-100 ℃ of second temperature; On the second noncrystalline and/or polycrystalline compounds semiconductor layer 200, the vapour phase one second extra noncrystalline and/or polycrystalline compounds semiconductor layer 202 of growing up, have and the first noncrystalline and/or polycrystalline compounds semiconductor layer 100 same structure compositions, the growth temperature is than the high 5-100 of the 3rd temperature ℃.
At first and second on the noncrystalline and/or polycrystalline compounds semiconductor layer 100,200, on first and second extra noncrystalline and/or polycrystalline compounds semiconductor layer 102,202, can add I type, P type and/or N type impurity respectively, impurity concentration is 10
14-22EA/cm
3, to form pin or other structures.
Wherein p type impurity can be zinc, magnesium, beryllium, strontium and/or cadmium.N type impurity can be silicon, germanium, tin, sulphur, tellurium and/or selenium.And after adding impurity, can carry out temperature 601-1200 ℃, 1-50 minute heating, annealing or electron beam sequence of fire.
This first and second make crystallization and/or polycrystalline compounds semiconductor layer, first and second additionally does crystallization and/or the polycrystalline compounds semiconductor layer can be used for homogeneity contact structure, heterojunction structure, two heterojunction structure, quantum well, multiple quantum trap or superlattice structure, and can design difference in the band source.
Moreover, remove above-mentioned vapour phase growth step, can add in processing procedure and cover glue (epoxy attaching), deposition (deDosition), plating (electric platting) and molecular beam epitaxy (MBE) step, so that processing procedure has more elasticity.
See table, for the various of explanation double-layer structure of the present invention may combination table
| Numbering | Ground floor | The second layer | Connect the face form | Can form element |
| 1 | ?N | ?N | Difficult together/heterogeneous | Diode |
| 2 | ?N | ?N | Heterogeneous | Diode |
| 3 | ?N | ?I | Heterogeneous | Diode |
| 4 | ?P | ?N | Heterogeneous | Diode |
| 5 | ?P | ?P | Homogeneity/heterogeneous | Diode |
| 6 | ?P | ?I | Heterogeneous | Diode |
| 7 | ?I | ?N | Heterogeneous | Resistance |
| 8 | ?I | ?P | Heterogeneous | Resistance |
| 9 | ?I | ?I | Homogeneity/heterogeneous | Resistance |
Moreover, if there is more multi-layered structure to add, then can form the more complicated face that connects, for example two heterojunctions reach more diversified element, are all the popularization of above-mentioned two layer system.
In sum, constructional device and growing method by the gallium nitride compound semiconductor of noncrystalline and polycrystalline structure of the present invention can significantly reduce cost, and improve acceptance rate.Material of the present invention and flow process are not limited thereto, and therefore any those who are familiar with this art are in the field of the invention, and variation of being implemented or modification all covered in protection scope of the present invention.
Claims (11)
1. the growth method of gallium nitride series compound semiconductor of noncrystalline and polycrystalline structure is characterized in that comprising the following step:
(1) the vapour phase first noncrystalline and/or polycrystalline compounds semiconductor layer of growing up has constituent In
xAl
yGa
(1-x-y)N, 0.0000≤x wherein, y≤1.000, (x+y)≤1.0000, thickness is 1.00 -10.00 μ m, the growth temperature is the first temperature 180-1100 ℃;
(2) on the first noncrystalline and/or polycrystal semiconductor layer, the vapour phase first extra noncrystalline and/or polycrystalline compounds semiconductor layer of growing up has and the first noncrystalline and/or polycrystal semiconductor layer same structure composition, and is identical or different but stoichiometric number comprises; Thickness is 1.00 -10.00 μ m, and the growth temperature is the second temperature 180-1200 ℃.
2, the growth method of gallium nitride series compound semiconductor of noncrystalline and polycrystalline structure as claimed in claim 1, it is characterized in that also being included on the first extra noncrystalline and/or polycrystalline compounds semiconductor layer, the vapour phase second noncrystalline and/or polycrystalline compounds semiconductor layer of growing up, have and the first noncrystalline and/or polycrystalline compounds semiconductor layer same structure composition, the growth temperature is the 3rd temperature, and it is than low 5-100 ℃ of second temperature;
On the second noncrystalline and/or polycrystalline compounds semiconductor layer, vapour phase the growth second extra noncrystalline and/or polycrystalline compounds semiconductor layer, have and the first noncrystalline and/or polycrystalline compounds semiconductor layer same structure composition, the growth temperature is than the high 5-100 of the 3rd temperature ℃.
3, the growth method of gallium nitride series compound semiconductor of noncrystalline and polycrystalline structure as claimed in claim 1 or 2, it is characterized in that: on this first and second noncrystalline and/or polycrystalline compounds semiconductor layer, first and second is extra noncrystalline and/or the polycrystalline compounds semiconductor layer on, add 1 type, P type and/or N type impurity, impurity concentration is 10
14-22EA/cm
3
4, the growth method of gallium nitride series compound semiconductor of noncrystalline and polycrystalline structure as claimed in claim 3, it is characterized in that: p type impurity can be zinc, magnesium, beryllium, strontium and/or cadmium.
5, the growth method of gallium nitride series compound semiconductor of noncrystalline and polycrystalline structure as claimed in claim 3, it is characterized in that: N type impurity can be silicon, germanium, tin, sulphur and/or selenium.
6, the growth method of gallium nitride series compound semiconductor of noncrystalline and polycrystalline structure as claimed in claim 3 is characterized in that: after adding impurity, carry out temperature 601.0-1200 ℃, 1-50 minute heating, annealing or electron beam sequence of fire.
7, the growth method of gallium nitride series compound semiconductor of noncrystalline and polycrystalline structure as claimed in claim 3, it is characterized in that: vapour phase growth gas comprises the front three ammonia aluminium that ammonia, hydrazine or ammonia combine with hydrazine, and adds trimethyl gallium and/or triethyl-gallium.
8, the growth method of gallium nitride series compound semiconductor of noncrystalline and polycrystalline structure as claimed in claim 3 is characterized in that: vapour phase growth gas comprises and mixes diethyl zinc, trimethyl zinc, trimethyl indium or the cyclopentadienyl group magnesium that use the back.
9, the growth method of gallium nitride series compound semiconductor of noncrystalline and polycrystalline structure as claimed in claim 1 or 2 is characterized in that: base material comprises and uses sapphire, gallium nitride, silicon, carbonization silicon or GaAs.
10, the growth method of gallium nitride series compound semiconductor of noncrystalline and polycrystalline structure as claimed in claim 1 or 2, it is characterized in that: this first and second noncrystalline and/or polycrystalline compounds semiconductor layer, first and second extra noncrystalline and/or polycrystalline compounds semiconductor layer can be used for the semiconductor structure of homogeneity contact structure, heterojunction structure, two heterojunction structure, quantum well, multiple quantum trap or the superlattice structure of the design of different semiconductor energies rank.
11, the growth method of gallium nitride series compound semiconductor of noncrystalline and polycrystalline structure as claimed in claim 1 or 2 is characterized in that: comprise adding and cover glue, deposition, plating and molecular beam epitaxy step.
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| CN00106194A CN1322006A (en) | 2000-04-30 | 2000-04-30 | Growth method of gallium nitride series compound semiconductor with amorphous and polycrystalline structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9157169B2 (en) | 2005-09-14 | 2015-10-13 | International Rectifier Corporation | Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path |
-
2000
- 2000-04-30 CN CN00106194A patent/CN1322006A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9157169B2 (en) | 2005-09-14 | 2015-10-13 | International Rectifier Corporation | Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path |
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