CN1321450C - 形成金属-绝缘体-金属电容的方法 - Google Patents
形成金属-绝缘体-金属电容的方法 Download PDFInfo
- Publication number
- CN1321450C CN1321450C CNB2003101091090A CN200310109109A CN1321450C CN 1321450 C CN1321450 C CN 1321450C CN B2003101091090 A CNB2003101091090 A CN B2003101091090A CN 200310109109 A CN200310109109 A CN 200310109109A CN 1321450 C CN1321450 C CN 1321450C
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- Prior art keywords
- metal
- insulator
- dielectric layer
- layer
- opening
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 48
- 239000002184 metal Substances 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000003990 capacitor Substances 0.000 claims abstract description 33
- 230000008021 deposition Effects 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 239000002002 slurry Substances 0.000 claims description 3
- 229920002472 Starch Polymers 0.000 claims 1
- 235000019698 starch Nutrition 0.000 claims 1
- 239000008107 starch Substances 0.000 claims 1
- 238000007747 plating Methods 0.000 abstract description 4
- 230000000903 blocking effect Effects 0.000 abstract description 3
- 229910000906 Bronze Inorganic materials 0.000 abstract 8
- 239000010974 bronze Substances 0.000 abstract 8
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 abstract 8
- 239000013078 crystal Substances 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 26
- 238000005516 engineering process Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 241000271510 Agkistrodon contortrix Species 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- -1 108 Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
Images
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2003101091090A CN1321450C (zh) | 2003-12-05 | 2003-12-05 | 形成金属-绝缘体-金属电容的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2003101091090A CN1321450C (zh) | 2003-12-05 | 2003-12-05 | 形成金属-绝缘体-金属电容的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1624893A CN1624893A (zh) | 2005-06-08 |
CN1321450C true CN1321450C (zh) | 2007-06-13 |
Family
ID=34758838
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003101091090A Expired - Lifetime CN1321450C (zh) | 2003-12-05 | 2003-12-05 | 形成金属-绝缘体-金属电容的方法 |
Country Status (1)
Country | Link |
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CN (1) | CN1321450C (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110349761B (zh) * | 2019-07-05 | 2021-04-06 | 中国科学院微电子研究所 | 一种具有通孔阵列的平板电容结构制造方法及电子设备 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6313003B1 (en) * | 2000-08-17 | 2001-11-06 | Taiwan Semiconductor Manufacturing Company | Fabrication process for metal-insulator-metal capacitor with low gate resistance |
US6413815B1 (en) * | 2001-07-17 | 2002-07-02 | Macronix International Co., Ltd. | Method of forming a MIM capacitor |
US6468873B1 (en) * | 2001-11-01 | 2002-10-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | MIM formation method on CU damscene |
US20030102522A1 (en) * | 2001-12-05 | 2003-06-05 | Samsung Electronics Co., Ltd. | Semiconductor devices with capacitors of metal/insulator/metal structure and methods for forming the same |
-
2003
- 2003-12-05 CN CNB2003101091090A patent/CN1321450C/zh not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6313003B1 (en) * | 2000-08-17 | 2001-11-06 | Taiwan Semiconductor Manufacturing Company | Fabrication process for metal-insulator-metal capacitor with low gate resistance |
US6413815B1 (en) * | 2001-07-17 | 2002-07-02 | Macronix International Co., Ltd. | Method of forming a MIM capacitor |
US6468873B1 (en) * | 2001-11-01 | 2002-10-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | MIM formation method on CU damscene |
US20030102522A1 (en) * | 2001-12-05 | 2003-06-05 | Samsung Electronics Co., Ltd. | Semiconductor devices with capacitors of metal/insulator/metal structure and methods for forming the same |
Also Published As
Publication number | Publication date |
---|---|
CN1624893A (zh) | 2005-06-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111129 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111129 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corp. Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Address before: 201203 No. 18 Zhangjiang Road, Shanghai Patentee before: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. |
|
CX01 | Expiry of patent term |
Granted publication date: 20070613 |
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CX01 | Expiry of patent term |