CN1317695C - Method for improving L10-Fept thin film performance with surface activating agent - Google Patents
Method for improving L10-Fept thin film performance with surface activating agent Download PDFInfo
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- CN1317695C CN1317695C CNB2005100120964A CN200510012096A CN1317695C CN 1317695 C CN1317695 C CN 1317695C CN B2005100120964 A CNB2005100120964 A CN B2005100120964A CN 200510012096 A CN200510012096 A CN 200510012096A CN 1317695 C CN1317695 C CN 1317695C
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- fept
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Abstract
The present invention provides a method for improving L10-FePt film performance via a surfactant, which belongs to the technical field of high-density magnetic recording material. In a magnetron sputter, Bi and FePt are deposited on a cleaned glass base plate. The present invention is characterized in that the deposit sequence is 150 to 500* bismuth Bi and 100 to 500* iron and platinum Fe Pt; the background vacuum degree of a sputtering chamber is from 1*10 <-5> to 7*10 <-5> Pa, and sputtering argon pressure is from 0.4 to 0.6Pa; the base plate is retained at room temperature; the background vacuum degree in annealing is 2*10 <-5>to 7*10 <-5> Pa. The present invention has the advantages of greatly raised the parallel film surface coercivity of the film after annealing, low cost, simple preparation, etc. because the film only adopts a bilayer structure and has small thickness, and no complicated processes such as base plate heating, etc. are adopted in the preparation process. Thus, the present invention is suitable for future production.
Description
Technical field
The invention belongs to high density magnetic recording material technology field, particularly provide a kind of and improved L1 with surfactant
0The method of-FePt film performance.
Background technology
In more than ten years in the past, information storage technology especially Magnetographic Technology has obtained development at full speed, has particularly used the giant magnetoresistance spin valve heads, makes the area recording density of hard disk increase substantially.Laboratory longitudinal magnetic recording surface density has reached 150Gb/in at present
2(S.Mao et al.IEEE Tran.Magn.40,307 (2004)).Recording density will further improve, and must reduce the size of magnetic recording single domain particle.When the magnetic recording surface density reaches 1Tb/in
2The time, crystallite dimension should be less than 5nm, and this moment, magnetic recording material must have higher magnetocrystalline anisotropy just can overcome the heat demagnetization phenomenon that causes owing to super paramagnetic effect owing to the needs of thermal stability.L1
0-FePt ordered alloy has very high magnetocrystalline anisotropy (K
u=7 * 10
6J/m
3), can when being 3nm, particle size still have extraordinary thermal stability, and therefore become the magnetic recording medium material that receives much attention in recent years and be widely studied.
Directly the FePt alloy of sputter must be annealed under the temperature that is higher than 500 ℃ (C.M.Kuo, P.C.Kuoand H.C.Wu, J.App.Phys.85,2264 (1999)) on glass substrate, could realize unordered-ordering transition, forms FePt-L1
0Phase.But the negative effect that thermal treatment brings is grain growth, and grain growth must cause the increase of magnetic coupling interaction, and the magnetic activation volume increases, and the signal to noise ratio (S/N ratio) of sense information is reduced, and is unfavorable for the realization of high record density.Become the key that the FePt alloy is applied to the high density storage so reduce ordering temperature.Part Study person utilizes multilayer membranization (Y.Endo, N.Kikuchi, O.Kitakami, and Y.Shimada, J.Appl.Phys.89,7065 (2001)) or molecular beam epitaxy (R.F.C.Farrow, D.Weller, R.F.Marks, and M.F.Toney, J.Appl.Phys.84,934 (1998)) method, can make the FePt film under lower temperature, (be lower than 400 ℃) and realize ordering pransition, but the parallel face coercive force all lower (1-6kOe) of the film of preparing can not reach the magnetic property requirement that will be applied to the high density magnetic recording material future.Part Study person utilizes element (Y.K.Takahashi, M.Ohuma and K.Hono, J.Magn.Magn.Mater.246,259 (2002) such as doped with Cu, Zr; S.R, Lee, S.Yang and Y.Keunkim, Appl.Phys.Lett.78,4001 (2001)) or be bottom (Y.N.Hsu, S.Jeong, and D.E.Laughlin, J.Appl.Phys.89,7068 (2001) with Ag, Au etc.; T.Seki, T.Shima and K.Takanashi, J.Magn.Magn.Mater.272-276,2182 (2004)) as the method that reduces ordering temperature, but generally be higher than 350 ℃, and the thin film coercitive force after process annealing is still lower, and some elements are also easy and FePt formation ternary alloy three-partalloy when high annealing, destroys FePt-L1
0Structure is so fail that the parallel face coercive force of film is had raising significantly.Adopt the method that increases heat treatment time can improve its coercive force, but cause the increase of production cost, also be unfavorable for following application.So realize the practicability of FePt alloy, not only to reduce ordering temperature and heat treatment time, to guarantee also that simultaneously the film after the thermal treatment at a lower temperature has higher parallel face coercive force.
Summary of the invention
The object of the present invention is to provide with surfactant and improve L1
0The method of-FePt film performance has solved the problem of the suitability for industrialized production of FePt alloy.
The present invention utilizes the bottom of surface active element Bi as the FePt film, utilize the surface free energy of Bi lower, the characteristics of easy diffusion, not only can reduce the ordering temperature of FePt film, and after annealing through lower heat treatment temperature with than short heat treatment time, film can form good FePt-L1
0Structure, and have higher parallel face coercive force.
The present invention is the Bi layer that inserts certain thickness (150～500 ) between glass substrate and FePt (100～500 ) monofilm, with the preparation FePt film that ordering temperature is lower and coercive force is higher.Preparation process is to carry out in magnetic control sputtering device, deposits bismuth Bi (150～500 ) and iron platinum FePt (100～500 ) successively at the glass substrate that cleans up.Sputtering chamber base vacuum degree is 1 * 10
-5～7 * 10
-5Pa, it is 0.4～0.6Pa that argon gas during sputter (99.99%) is pressed; Substrate keeps room temperature.Film after the preparation is heat-treated in vacuum annealing furnace immediately, and annealing furnace base vacuum degree is 2 * 10
-5～7 * 10
-5Pa.
The present invention utilizes the Bi element to compare with FePt to have the less surface free energy and the characteristics of surface diffusion ability faster, Bi can be diffused into the surface of inserting the FePt film in heat treatment process, give in the film and bring a large amount of defectives such as room, promote arranging in order relatively again of Fe, Pt atom, promptly improved the ordering degree of FePt film after the thermal treatment.Because the diffusion process of Bi can fully be carried out in the short period of time, make after FePt film process lower temperature and the annealing to have the higher FePt-L1 of the degree of order simultaneously than the short time
0Structure has promptly reduced the ordering temperature of FePt film, and the parallel face coercive force of the film after the thermal treatment had significantly improves.
The invention has the advantages that: utilize the lower activator Bi of surface free energy when being diffused into the FePt film surface, promoted the process of film ordering, make the ordering temperature of FePt film be reduced to 350 ℃.During 350 ℃ of annealing, the coercivity value of Bi (200 )/FePt (200 ) and Bi (400 )/FePt (300 ) film has improved 9 times and 4 times respectively than the coercive force of FePt (200 ) monofilm.
Because film only adopts double-decker, and thickness is all less, in preparation process, do not adopt complicacy technologies such as substrate heating simultaneously in addition,, prepare advantages such as simple, be applicable to the production in future so that it also has a cost is low.
Description of drawings
Fig. 1 is the variation diagram of the parallel face coercive force of FePt (200 ) monofilm, Bi (200 )/FePt (200 ) and Bi (400 )/FePt (300 ) duplicature of depositing on glass substrate with annealing temperature, and wherein annealing time is 30 minutes.Curve (a) FePt (200 ), curve (b) Bi (400 )/FePt (300 ), curve (c) Bi (200 )/FePt (200 )
Embodiment
In magnetic control sputtering device, prepare film.At first with glass substrate organic chemistry solvent, deionized water and alcohol ultrasonic cleaning, on the sputtering chamber sample base of packing into then.Substrate keeps room temperature.Sputtering chamber base vacuum 3 * 10
-5Pa, argon gas when sputter (purity is 99.99%) is pressed to depositing bismuth Bi (200 ) and iron platinum FePt (200 ) preparation Bi (200 )/FePt (200 ) film under the condition of 0.45Pa successively, deposition bismuth Bi (400 ) and iron platinum FePt (300 ) preparation Bi (400 )/FePt (300 ) film.Sample after the sputter is 2 * 10 in vacuum tightness rapidly
-5Heat-treat in the vacuum annealing furnace of Pa.As can be seen from Figure 1, there is not the FePt film of Bi layer after 400 ℃ of annealing, just to have higher coercive force (6.8kOe), and Bi (200 )/FePt (200 ) and Bi (400 )/FePt (300 ) film, coercivity value reaches 10.4kOe and 5.3kOe respectively after 350 ℃ of annealing, has improved 9 times and 4 times respectively than the coercive force of the FePt after 350 ℃ of annealing (200 ) monofilm.So the Bi bottom can make the ordering temperature of FePt film be reduced to 350 ℃, and increase substantially the parallel face coercivity value after the process annealing, be suitable for L1
0-FePt is applied in the following high density magnetic recording.
Claims (2)
1, a kind ofly improves L1 with surfactant
0The method of-FePt film performance, in magnetic control sputtering device, glass substrate deposition Bi and FePt cleaning up is characterized in that the order of deposition is followed successively by 150～500 bismuth Bi and 100～500 iron platinum FePt; Sputtering chamber base vacuum degree is 1 * 10
-5～7 * 10
-5Pa, Ar Pressure is 0.4～0.6Pa during sputter, substrate keeps room temperature; The base vacuum degree is 2 * 10 during annealing
-5～7 * 10
-5Pa makes the ordering temperature of FePt film be reduced to 350 ℃.
2, the method for claim 1 is characterized in that: used purity of argon is 99.99%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100120964A CN1317695C (en) | 2005-07-06 | 2005-07-06 | Method for improving L10-Fept thin film performance with surface activating agent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100120964A CN1317695C (en) | 2005-07-06 | 2005-07-06 | Method for improving L10-Fept thin film performance with surface activating agent |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1741142A CN1741142A (en) | 2006-03-01 |
| CN1317695C true CN1317695C (en) | 2007-05-23 |
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|---|---|---|---|
| CNB2005100120964A Expired - Fee Related CN1317695C (en) | 2005-07-06 | 2005-07-06 | Method for improving L10-Fept thin film performance with surface activating agent |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102779533A (en) * | 2012-07-19 | 2012-11-14 | 同济大学 | FeRhPt composite film adjustable in phase transition temperature and preparation method of FeRhPt composite film |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101215689B (en) * | 2007-12-27 | 2011-01-12 | 复旦大学 | Method for preparing (002) texture Fe thin film |
| CN103440875A (en) * | 2013-08-13 | 2013-12-11 | 同济大学 | FeRh/FePt bi-layer film for super high density heat assisted magnetic recording and preparation method thereof |
| CN114606471B (en) * | 2022-04-01 | 2023-11-14 | 季华实验室 | FeCoCr magnetic code disc film material and preparation method and application thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5989728A (en) * | 1994-11-02 | 1999-11-23 | International Business Machines Corporation | Thin film magnetic recording medium having high coercivity |
| JP2003099920A (en) * | 2001-09-21 | 2003-04-04 | National Institute For Materials Science | MANUFACTURING METHOD OF THIN FePt MAGNETIC THIN FILM |
| CN1610021A (en) * | 2003-07-30 | 2005-04-27 | 同和矿业株式会社 | Magnetic metal particle aggregate and method of producing the same |
-
2005
- 2005-07-06 CN CNB2005100120964A patent/CN1317695C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5989728A (en) * | 1994-11-02 | 1999-11-23 | International Business Machines Corporation | Thin film magnetic recording medium having high coercivity |
| JP2003099920A (en) * | 2001-09-21 | 2003-04-04 | National Institute For Materials Science | MANUFACTURING METHOD OF THIN FePt MAGNETIC THIN FILM |
| CN1610021A (en) * | 2003-07-30 | 2005-04-27 | 同和矿业株式会社 | Magnetic metal particle aggregate and method of producing the same |
Non-Patent Citations (1)
| Title |
|---|
| Fe-Pt纳米晶永磁材料的研究进展 任静，顾正飞，成钢，王仲民，周怀营，金属功能材料，第11卷第6期 2004 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102779533A (en) * | 2012-07-19 | 2012-11-14 | 同济大学 | FeRhPt composite film adjustable in phase transition temperature and preparation method of FeRhPt composite film |
| CN102779533B (en) * | 2012-07-19 | 2016-04-06 | 同济大学 | FeRhPt laminated film that a kind of phase transition temperature is adjustable and preparation method thereof |
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| CN1741142A (en) | 2006-03-01 |
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