CN1316740C - Micro power triggering method of thyristor and circuit thereof - Google Patents

Micro power triggering method of thyristor and circuit thereof Download PDF

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Publication number
CN1316740C
CN1316740C CNB2004100151309A CN200410015130A CN1316740C CN 1316740 C CN1316740 C CN 1316740C CN B2004100151309 A CNB2004100151309 A CN B2004100151309A CN 200410015130 A CN200410015130 A CN 200410015130A CN 1316740 C CN1316740 C CN 1316740C
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thyristor
micropower
thyristors
triggering method
circuit
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CN1556587A (en
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王锐勋
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ACCELERATED PRINTED CIRCUIT INDUSTRIAL CO., LTD
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王锐勋
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Abstract

The present invention relates to a micropower triggering method of thyristors and a circuit thereof. The micropower triggering method of thyristors comprises the following steps: inversely connecting two thyristors (Th1, Th2) in parallel for controlling an AC or DC circuit; connecting the gate electrodes (G1, G2) of the two thyristors (Th1, Th2) by a network (N); making the resistance value z of the network (N) vanishing. At this time, the thyristor (Th1) or (Th2) which is applied to a forward voltage is triggered to be conducted, trigger currents (I<G1>=I<G2>) are far less than minimal trigger currents labeled by the two thyristors, and the trigger currents are commonly less than 1mA. compared with the prior art, the micropower triggering method of thyristors and a circuit thereof have the advantages that the trigger currents required by the thyristors are low and can be stably and reliably triggered, and the application cost is low; the same trigger circuit can be suitable for the thyristors with different power and different application occasions; when in an AC loop, the deformation of forward and reverse voltage waveforms is minimal, and the forward and reverse voltage waveforms are continuously zero cross, so the pollution for an electric network is small and even can be ignored.

Description

The micropower triggering method of thyristor
Technical field the present invention relates to the semiconductor switch device application, especially relates to thyristor, i.e. silicon controlled triggering method particularly relates to the micropower triggering method of thyristor.
The background technology thyristor is a thyratron transistor, is commonly called as controllable silicon, is a kind of semiconductor switch device of four layer of three end.Two thyristor reverse parallel connections connections are used for alternating current circuit, especially in the control power circuit, compare traditional contact switch, unrivaled advantage is arranged.Thyristor is applying under the forward voltage condition that is not higher than its breakover voltage, must inject sufficient intensity and the gate electrode trigger current I of enough time GTCould make its conducting.Because what apply is alternating voltage, after the described thyristor conducting again at anode voltage U ATurn-off when becoming negative value, thereby also need U ABecome once more on the occasion of the time refill trigger current.So thyristor is when the control alternating current circuit, required gate electrode triggering signal is one certain current strength and certain hour width, and and the synchronous continuous impulse of anode voltage.The current capacity of thyristor is big more, and the current strength of required trigger impulse is just high more.For example 1000 the peace thyristors, its trigger current usually requires to reach the ampere level, the required trigger current of general thyristor also requires to reach a milliampere level usually, so just must cause thyristor to be used as when exchanging rest switch, and heavy circuits for triggering device and higher cost must be arranged.Simultaneously, the thyristor of different capacity and different application occasion needs different circuits for triggering.
The summary of the invention the technical problem to be solved in the present invention is to avoid above-mentioned the deficiencies in the prior art part and the micropower triggering method that proposes a kind of thyristor.Use method of the present invention, can deacclimatize the thyristor of different capacity or different application occasion with same circuits for triggering, and, even trigger current during far below the trigger current value of thyristor nominal, still can make thyristor reliablely and stablely trigger.
The present invention solve the technical problem can be by realizing by the following technical solutions:
Propose a kind of micropower triggering method of thyristor, comprise two thyristor Th1, Th2 reverse parallel connection are connected, be used for control and exchange or DC circuit, also comprise the steps:
(1) network N connects gate electrode G1, the G2 of described two thyristor Th1, Th2;
(2) make the resistance value z of described network N go to zero;
At this moment, be applied in the thyristor Th1 or the Th2 triggering and conducting of forward voltage, and trigger current I G1=I G2I trigger current much smaller than this two thyristors nominal is generally less than 1mA.
Compare with prior art, the technique effect of the micropower triggering method of thyristor of the present invention is: 1, the required trigger current of thyristor is low, even trigger current is during far below the trigger current value of thyristor nominal, thyristor still can reliable and stablely trigger, and application cost is low; 2, same circuits for triggering go for the thyristor of different capacity and different application occasion; When 3, being used for ac circuit, the minimum and continuous zero passage of forward and reverse voltage waveform distortion, thereby very little even can ignore to the pollution of electrical network.
Description of drawings
Fig. 1 is the basic circuit diagram of the micropower triggering method of thyristor of the present invention;
Fig. 2 is that the network N of described invention is the circuit diagram when being subjected to the contact J of controlled relay;
Fig. 3 is the circuit diagram of the network N of described invention when being semiconducter simulation switch AS;
Fig. 4 is described semiconducter simulation switch AS circuit diagram of the present invention when being photosensitive bidirectional diode;
Fig. 5 is described semiconducter simulation switch AS circuit diagram of the present invention when being photosensitive MOSFET relay;
Fig. 6 and Fig. 7 are the schematic diagrames that increases impedance matching circuit in the circuit of the present invention.
Embodiment is described in further detail below in conjunction with the most preferred embodiment shown in the accompanying drawing.
The micropower triggering method of thyristor of the present invention as shown in Figure 1, comprises two thyristor Th1, Th2 reverse parallel connection are connected, and is used for control and exchanges or DC circuit, also comprises the steps:
(1) connects gate electrode G1, the G2 of described two thyristor Th1, Th2 with network N;
(2) make the resistance value z of described network N go to zero, can make the resistance value Z of described network N and power supply synchronously or go to zero once when being used for DC power supply, also can be make described network N resistance value Z continuously or stepping go to zero.
At this moment, be applied in the thyristor Th1 or the Th2 triggering and conducting of forward voltage, and trigger current I G1=I G2I trigger current much smaller than this two thyristors nominal is generally less than 1mA.Among the present invention, the described network N that is connected between two thyristor Th1, Th2 gate electrode G1, the G2 is two end passive networks.Among Fig. 1, described two end passive networks are impedance component Z, and the resistance value z of this impedance component Z is for fixing or controllable adjustment, when being blocked impedance, and the trigger current I of thyristor G1Or I G2Size depend on the voltage at the inherent characteristic of thyristor own and thyristor negative electrode K1/K2, anode A 1/A2 two ends and adjust voluntarily; When being variable impedance element Z ', the size of adjustable impedance value z then, corresponding electric current I G1Or I G2Reduce or increase, thus thyristor T1 or T2 conducting or end.Therefore, use circuits for triggering of the present invention can adapt to the thyristor of different capacity and different application occasion.
As shown in Figure 2, described two end passive networks are the contact J that are subjected to controlled relay, can reach the purpose of control loop break-make by the switching of control contact J.
The micropower circuits for triggering of thyristor of the present invention, shown in Fig. 1 to 7, rely on its main circuit that triggers control and comprise two reverse parallel connections or the thyristor Th1, the Th2 that connect by the impedance matching network reverse parallel connection, being used for control exchanges or DC circuit, the end of two-terminal network N connects the gate electrode G1 of described thyristor Th1, and the other end of described network N connects the gate electrode G2 of described thyristor Th2; As shown in Figure 1, control circuit C goes to zero the resistance value z of two-terminal network N by the effect of heat, magnetic, light or mechanical force, thereby be applied in the thyristor Th1 or the Th2 triggering and conducting of forward voltage in described two thyristors, switch or regulate described interchange or direct current signal or electric power.
Fig. 2 is a circuits for triggering example of the present invention, and described two end passive networks are the contact J that are subjected to controlled relay, can reach the purpose of control loop break-make by the switching of control contact J.When contact J was closed, the thyristor that adds forward voltage among thyristor T1, the T2 was with conducting.In this practical circuit, typical components and parts are various types of relays, switch with mechanical contact, as electromagnetic relay, piezo-electric relay, electrostatic relay, electro-adhesion relay, thermal relay etc.Control the switching of contact J by simple control relay coil, thereby reach the purpose of control loop break-make, simultaneously, aforementioned part components and parts possess the function that control loop and major loop are isolated fully.
Fig. 3 also is circuits for triggering example of the present invention, and network N described in the figure is semiconducter simulation switch AS, brings in the impedance magnitude at control G1, G2 two ends by C1, C2 two, thereby reaches the purpose of control loop size of current or loop break-make.Fig. 4 and Fig. 5 are described network N circuits for triggering examples of the present invention when being semiconducter simulation switch AS; Wherein, the switch of semiconducter simulation described in Fig. 4 AS is the minimum photosensitive bidirectional triode thyristor of photosensitive bidirectional diode or leakage current, the switch of semiconducter simulation described in Fig. 5 AS is photosensitive MOSFET relay, described semiconducter simulation switch AS can also be frequently quick, photosensitive, pressure-sensitive, power is quick, wet quick, air-sensitive, magnetosensitive or bio-sensing impedance device etc.Fig. 6 and Fig. 7 are applications of deriving of basic skills, and characteristics are to have increased impedance matching network, and so, in some certain applications, thyristor Th1 and Th2 can be different model, and mating has the thyristor power of impedance matching network can be very little.

Claims (10)

1. the micropower triggering method of a thyristor comprises two thyristors (Th1, Th2) reverse parallel connection is connected, and is used for control and exchanges or DC circuit, it is characterized in that, also comprises the steps:
(1) use network (N) to connect the gate electrode (G1, G2) of described two thyristors (Th1, Th2);
(2) make the resistance value z of described network (N) go to zero;
At this moment, be applied in the thyristor (Th1) of forward voltage or (Th2) triggering and conducting, and trigger current I G1=I G2I trigger current much smaller than this two thyristors nominal is generally less than 1mA.
2. the micropower triggering method of thyristor as claimed in claim 1 is characterized in that: in described step (2), be to make the resistance value Z of described network (N) and power supply synchronously or go to zero once when being used for DC power supply.
3. the micropower triggering method of thyristor as claimed in claim 1 is characterized in that: in described step (2), be make described network (N) resistance value Z continuously or stepping go to zero.
4. the micropower triggering method of thyristor as claimed in claim 1, it is characterized in that: the described network (N) that is connected between two thyristors (Th1, the Th2) gate electrodes (G1, G2) is two end passive networks.
5. the micropower triggering method of thyristor as claimed in claim 4, it is characterized in that: described two end passive networks are impedance component (Z).
6. the micropower triggering method of thyristor as claimed in claim 5, it is characterized in that: described impedance component (Z) is the controlled impedance component of resistance value.
7. the micropower triggering method of thyristor as claimed in claim 4, it is characterized in that: described two end passive networks are the contacts (J) that are subjected to controlled relay.
8. the micropower triggering method of thyristor as claimed in claim 1, it is characterized in that: described network (N) is semiconducter simulation switch (AS).
9. the micropower triggering method of thyristor as claimed in claim 8, it is characterized in that: described semiconducter simulation switch (AS) is photosensitive bidirectional diode or photosensitive bidirectional triode thyristor.
10. the micropower triggering method of thyristor as claimed in claim 8, it is characterized in that: described semiconducter simulation switch (AS) is photosensitive M0SFET relay.
CNB2004100151309A 2004-01-09 2004-01-09 Micro power triggering method of thyristor and circuit thereof Expired - Fee Related CN1316740C (en)

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CNB2004100151309A CN1316740C (en) 2004-01-09 2004-01-09 Micro power triggering method of thyristor and circuit thereof

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CN1316740C true CN1316740C (en) 2007-05-16

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4717841A (en) * 1984-12-05 1988-01-05 La Telemecanique Electrique Static power switch apparatus
US4937507A (en) * 1988-06-17 1990-06-26 Mitsubishi Denki Kabushiki Kaisha Regenerative control system for motor generator

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4717841A (en) * 1984-12-05 1988-01-05 La Telemecanique Electrique Static power switch apparatus
US4937507A (en) * 1988-06-17 1990-06-26 Mitsubishi Denki Kabushiki Kaisha Regenerative control system for motor generator

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