CN1314669A - Active display device of large screen - Google Patents
Active display device of large screen Download PDFInfo
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- CN1314669A CN1314669A CN 00114928 CN00114928A CN1314669A CN 1314669 A CN1314669 A CN 1314669A CN 00114928 CN00114928 CN 00114928 CN 00114928 A CN00114928 A CN 00114928A CN 1314669 A CN1314669 A CN 1314669A
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Abstract
In the active display device, the active semiconductor chip is connected between pixels of the surface of the first base board via anisotropic conducting rubber via the through hole in the second base board and is connected electrically with display electrodes. A chip consists of at least one transistor or one complicated IC and controls at least one pixel, and monochip or makeup display with large screen may be manufactured. The present invention may be used in manufacture of large-screen display of liquid crystal, organic LED and electroluminescence device, and may be used in the display of monochromatic, multichromatic acid full color text and picture.
Description
The semi-conductor chip that the present invention relates to a kind of active display device of large screen, particularly a kind of driving circuit is directly installed on the giant-screen active display between each pixel on the display first substrate inside surface with anisotropy conductiving glue by at least one through hole on second substrate.It can be made into one chip or spliced large screen display, can be used for showing monochrome, polychrome and panchromatic character, picture and text and image etc.
In the prior art, active display, for example each picture element has the LCD (TFT-LCD) of a thin film transistor (TFT) to be widely used in laptop computer, desktop computer, small screen TV, displays such as gamma camera, it has advantages such as colored good, that resolution is high, ganmma controller is good, has become current main flat panel display.
But the TFT-LCD technology also comes with some shortcomings, for example, be difficult to make large screen display greater than 30 inches, reason is its manufacturing process complexity, need a plurality of high-precision photoetching alignment process and repeatedly large-sized vacuum technology, the TFT-LCD that does greater than 30 inches not only needs very big investment, and cost is very high, and also has many technical difficulties.
In order to overcome above-mentioned deficiency, someone proposes to replace TFT to make large screen display with the semi-conductor chip of existing maturation process, so not only can remove the very high large scale TFT technology of cost from, utilizes existing high-performance, cheap semi-conductor chip, a semiconductor wafer can be cut into a large amount of chips and remove to replace TFT, and cost is low, the performance of driving circuit is better than TFT, the displayed image better quality, and the size of screen is almost without limits, can make the very active display of giant-screen.
The above-mentioned method with semi-conductor chip replacement TFT of prior art mainly contains following two kinds:
The one, chip is contained in " outer thin film transistor " on the outer surface of substrate, as United States Patent (USP) NO.5,510,915.Be contained in the active component of the chip on the outer surface of substrate, for example switching tube is connected on the electrode of each pixel of display by the thin conductor wire that is embedded in this substrate, thereby removes to control each pixel with displayed image.
Other method is (Fluidicself-assembly) technology of a kind of being called " fluid self assembly ", sees " Informationdisplay " Vol.15, No.11, P13,1999.It corrodes into the platform taper to 10 to the square little chip of hundreds of micron, be mixed in the liquid, allow this flow of liquid cross the display backplane surface, between each pixel of this back plate surface the pit identical shaped with chip arranged, when each chip stream can enter pit during through pit automatically, remove liquid and unnecessary chip then, coating by vaporization one deck Al film is on substrate surface and chip again, be photo-etched into connecting line again, the electrode of chip and each pixel is joined.
Said method replaces TFT with existing high performance semi-conductor chip, and it is very big to obtain screen, the better display of image quality, and can reduce cost.
But it is not high with the reliability that is electrically connected between pixel that its main difficulty is a chip, and yield rate is low, if with a kind of method in back, be difficult to then guarantee that each pit all has chip, also is difficult to repair, and yield rate is low.
The objective of the invention is to overcome the deficiency of above-mentioned existence, and provide a kind of chip easy, reliable, that yield rate is high, cost is low to be directly installed on active display device of large screen on the display base plate inside surface, can be used for making liquid crystal (LCD), Organic Light Emitting Diode (OLED) or organic light emission film (LEP---light-emiting-polymer) and electroluminescence giant-screen active displays such as (EL).
The objective of the invention is to finish by following technical solution, a kind of active display device of large screen, it comprises at least one first substrate, has one first electrode on its inside surface at least; One second substrate, its inside surface have at least one second electrode, have one deck display material between electrode at least, and two electrodes and display material constitute at least two and show image point; Have at least a semi-conductor chip to be directly installed between the image point, and be electrically connected with each electrode by the through hole on second substrate; Electric signal from the display system control circuit removes to control each image point to show picture and text and image through chip.
Described active display device of large screen, it is characterized in that described semi-conductor chip is to be installed between the demonstration image point that is made of electrode and display material with anisotropy conductiving glue or film, and be electrically connected with each electrode, described display material can be a self-luminescent material, as Organic Light Emitting Diode (OLED), organic light emission film (OLP) and electroluminescence (EL); Can be the passive type display material also, as liquid crystal.
Described semi-conductor chip can be at least one transistor or complicated integrated circuit, and a chip directly is electrically connected and controls at least an image point with electrode.
The shape of described chip can be rectangle, and the shape and the chip of the through hole on described second substrate are close, to make things convenient for chip to enter through hole and the electric contact of chip is aimed at electrode contact.
Described electrode is tin indium oxide, aluminium film, Cr/Cu/Cr, MgAg film, silver slurry layer or other conductive materials are made and be set at respectively on the inside surface of two substrates.
Described two substrates is glass, pottery or plastics, and at least one is transparent in two substrates.At least one is plastic base for a two substrates, and it can be hard or soft, and its material can be polyester, polycarbonate, PMMA, PES, organic glass.
Described active display device of large screen, its described demonstration image point that is made of electrode and display material can be arranged in the X-Y rectangular, to constitute matrix display; Also can form a pixel and constitute the full color matrix display by red, blue, green three image points; Also can be by the character of some monochromes or polychrome, graphical set is synthesized hybrid display.
Aforesaid active display device of large screen, its each image point and pixel be shaped as " ten " font, making has bigger space in order to described chip to be installed between each image point and the pixel.
Purpose of the present invention also can be finished by following technical solution, a kind of active display device of large screen, and it comprises at least one first substrate, has two first electrodes on its inside surface at least; One second substrate, its inside surface have at least one second electrode, have one deck liquid crystal layer at least as display material between two electrodes, and two electrodes and liquid crystal constitute at least two and show image point; Have at least a semi-conductor chip to be directly installed on the first substrate inside surface between each image point, and be electrically connected with each electrode by the through hole on second substrate; Electric signal from the display system control circuit removes to control each image point to show picture and text and image through chip.
Aforesaid active display device of large screen, its described semi-conductor chip are to be installed between the demonstration image point that is made of electrode and display material with anisotropy conductiving glue or film or welded wire or with scolding tin, conducting resinl, and are electrically connected with each electrode.
Described active display device of large screen is characterized in that described semi-conductor chip can be at least one transistor or complicated integrated circuit, and a chip is controlled an image point at least.
Described semi-conductor chip directly is electrically connected with electrode, and each active component in it can drive a plurality of image points, to reduce the needed number of chips of display device.
Described electrode is tin indium oxide, aluminium film, Cr/Cu/Cr, MgAg film, silver slurry layer or other conductive materials are made and be set at respectively on the inside surface of two substrates.
Described two substrates is glass or plastics, and at least one is transparent in two substrates.In addition, at least one is plastic base for a two substrates, and it can be hard or soft, and as plastic sheeting, its material can be polyester, polycarbonate, PMMA, PES, organic glass; When making soft display screen with plastic sheeting, can punch with laser beam at the electrodeless place of display screen, allow the plastic sheeting fusing form firm " rivet ", to form very firm plastic sheeting LCD.
Aforesaid display device is a full color liquid crystal indicator, liquid crystal material is the TN liquid crystal, liner is arranged in the liquid crystal layer, electrode surface has the trend layer, also have color filter layer and black matrix" on the electrode inside surface, on two outer surface of substrate polaroid is arranged, second substrate has back-illumination source outward, thereby constitutes the full color giant-screen active-matrix liquid crystal display of a transmission-type.
The described liquid crystal display material of one deck at least can also be other liquid crystal, as TN (twisted nematic), STN (super-twist nematic), PDLC (macromolecular material decentralized), FLCD (ferroelectric liquid crystals) GH (host and guest's liquid crystal), DS (dynamic scattering), HFE different liquid crystal materials such as (mixing field effects).
Described second substrate has a reflecting plate outward, or electrode itself is exactly a reflective electrode, thereby constitutes an effective liquid crystal display of reflective giant-screen.
Described second electrode is translucent, half reflection, thereby constitutes the LCD of a transmission, reflection dual-purpose.
Purpose of the present invention also can be finished by following technical solution, a kind of active display device of large screen, and it comprises at least one first substrate, has two first electrodes on its inside surface at least; Have one deck organic electroluminescent film on the electrode at least, the luminescent film end face has at least one second electrode, and second electrode is positioned at the inside surface of second substrate; Between two electrodes and luminescent film, constitute at least two and show image point; Have at least a semi-conductor chip to be directly installed on the first substrate inside surface between each image point, and be electrically connected with each electrode by the through hole on second substrate; Electric signal from the display system control circuit removes to control each image point to show picture and text and image through chip.
Described semi-conductor chip is to be installed between the demonstration image point that is made of electrode and luminescent film with anisotropy conductiving glue or film or welded wire or with scolding tin, conducting resinl, and is electrically connected with each electrode.
Described semi-conductor chip can be at least one transistor or complicated integrated circuit, and a chip is controlled an image point at least.
Described semi-conductor chip directly is electrically connected with electrode, and each active component in it can drive a plurality of image points, to reduce the needed number of chips of display device.
Described electrode is tin indium oxide, aluminium film, Cr/Cu/Cr, MgAg film, silver slurry layer or other conductive materials are made and be set at respectively on the inside surface of two substrates.
Described two substrates is glass or plastics, and at least one is transparent in two substrates.In addition, at least one is plastic base for a two substrates, and it can be hard or soft, and as plastic sheeting, its material can be polyester, polycarbonate, PMMA, PES, organic glass.
Aforesaid display device can be made into the display of monolithic; Also can be made into the active electroluminescence display device of the spliced giant-screen that is spliced into by polylith, the luminescent film in the described display device is at least a illuminant colour, as being made up of red, blue, green three look image points, constitutes monochromatic, polychrome or full-color display.
Purpose of the present invention also can be finished by following technical solution, a kind of active display device of large screen, and it comprises at least one first substrate, has two first electrodes on its inside surface at least; One second substrate, its inside surface have at least one second electrode, have one deck electroluminescence layer at least as display material between two electrodes, constitute at least two between two electrodes and the electroluminescence layer and show image point; Have at least a semi-conductor chip to be directly installed on the first substrate inside surface between each image point, and be electrically connected with each electrode by the through hole on second substrate; Electric signal from the display system control circuit removes to control each image point to show picture and text and image through chip.
Described semi-conductor chip can be at least one transistor or complicated integrated circuit, and a chip is controlled a demonstration image point that is made of electrode and electroluminescence layer at least.
Described electrode is tin indium oxide, aluminium film, Cr/Cu/Cr, MgAg film, silver slurry layer or other conductive materials are made and be set at respectively on the inside surface of two substrates.
Described two substrates is glass, pottery or plastics, and at least one is transparent in two substrates.At least one is plastic base for a two substrates, and it can be hard or soft, and as plastic sheeting, its material can be polyester, polycarbonate, PMMA, PES, organic glass.
Aforesaid display device can be made into the display of monolithic, also can be made into the active el display device of spliced giant-screen that is spliced into by polylith.
Electroluminescence layer in the described display device is one deck organic or inorganic electroluminescent membrane at least, and inorganic material can be film or powder electroluminescence.
Described electroluminescence layer is at least a illuminant colour, as being made up of red, blue, green three look image points, constitutes monochrome, polychrome or full color display.
Purpose of the present invention also can be finished by following technical solution, a kind of active display device of large screen, and it comprises at least two display modules, each module comprises at least one first substrate, has two first electrodes on its inside surface at least; One second substrate, its inside surface have at least one second electrode, have one deck display material between two electrodes at least, and two electrodes and display material constitute at least two and show image point; Have at least a semi-conductor chip to be directly installed on the first substrate inside surface between the image point, and be electrically connected with each electrode by the through hole on second substrate; Have at least one the through hole on second substrate be used between each module and and the display system circuit between electrical connection; Electric signal from the display system control circuit removes to control each image point to show picture and text and image through chip.
Described semi-conductor chip is to be installed between the demonstration image point that is made of electrode and display material with anisotropy conductiving glue or film or welded wire or with scolding tin, conducting resinl, and is electrically connected with each electrode.
Described semi-conductor chip can be at least one transistor or complicated integrated circuit, and a chip is controlled a demonstration image point that is made of electrode and display material at least.
Described electrode is tin indium oxide, aluminium film, Cr/Cu/Cr, MgAg film, silver slurry layer or other conductive materials are made and be set at respectively on the inside surface of two substrates.
Described two substrates is glass or plastics, and at least one is transparent in two substrates.At least one is plastic base for a two substrates, and it can be hard or soft, and as plastic sheeting, its material can be polyester, polycarbonate, PMMA, PES, organic glass; When making soft display screen with plastic sheeting, can punch with laser beam at the electrodeless place of display screen, allow the plastic sheeting fusing form firm " rivet ", to form very firm plastic sheeting LCD.
Described two substrates is plastic plate or film, and display module is provided with the sealing-in limit, and it allows two baseplate materials fusing and forming with laser beam cutting, thereby obtains firm and narrow and uniform envelope wall can be used for making the high resolution large screen display.
The display material of described display can be a self-luminescent material, as organic or inorganic electroluminescence film, powder or thin-film electroluminescence (TFEL); Can be the passive type display material also, as liquid crystal.
Description of drawings is as follows:
Fig. 1 is installed in the structural profile synoptic diagram of the LCD of outer surface of substrate for the chip of prior art.
Fig. 2 is the structural profile synoptic diagram of the display of chip on the substrate inside surface of utilization " fluid self assembly " technology of prior art.
Fig. 3 is installed in the structural profile synoptic diagram that shows the active display device of large screen between the image point on the first substrate inside surface for chip of the present invention through the through-hole diameter on second substrate.
Fig. 4 is the partial top view of the full color display embodiment of active display device of large screen of the present invention.
Fig. 5 is the partial structurtes diagrammatic cross-section of an embodiment of the LCD of active display device of large screen of the present invention.
Fig. 6 is the partial structurtes diagrammatic cross-section of another embodiment of the LCD of active display device of large screen of the present invention.
Fig. 7 is the partial structurtes diagrammatic cross-section of another embodiment of the LCD of active display device of large screen of the present invention.
Fig. 8 is the partial structurtes diagrammatic cross-section of an embodiment of the organic electroluminescent diode (OLED) of active display device of large screen of the present invention.
Fig. 9 is the partial structurtes diagrammatic cross-section of embodiment of the electroluminescence (EL) of active display device of large screen of the present invention.
Figure 10 a be the active spliced display device of giant-screen of the present invention partial top view.
Figure 10 b is the cross-sectional view of Figure 10 a.
Figure 11 a is the partial top view of the spliced display device of the active organic or inorganic electroluminescence of giant-screen of the present invention.
Figure 11 b is the cross-sectional view of Figure 11 a.
The present invention will be described in detail below in conjunction with above-mentioned accompanying drawing:
Fig. 1 is installed in the structural profile synoptic diagram of the LCD (LCD) on the outer surface of substrate for the prior art chip.1 and 2 is first and second substrates of LCD among the figure, and each electrode 3 and 4 of their inside surface is liquid crystal material layer 5 between electrode; 6 and 7 is polaroid.There is at least one driving to be installed on the outside surface of second substrate with semi-conductor chip 8.Chip is electrically connected with electrode 4 through the thin conductor wire 9 that is embedded in second substrate, from the electric signal of display system through chip drives LCD, with displayed image.
Fig. 2 is the structural representation that the another kind of prior art is installed the display of semi-conductor chip.1 and 2 is two substrates of display among the figure, and its inside surface respectively has electrode 3 and 4.5 is display medium, for example liquid crystal and luminescent material.A series of pit 10a on second substrate, 10b is the semi-conductor chip that is corroded into the platform taper, chip adopts " fluid is from installing " technology to put into pit 10a, promptly sneak in a kind of liquid making platform taper chip, allow this flow of liquid through second substrate surface, because chip has identical shape with pit, when crossing pit, chip stream can enter pit automatically, remove liquid and unnecessary chip then, again at this substrate surface AM aluminum metallization film, make electric connection line 11 with the photoetching method then, chip 10b is linked to each other with electrode 4, to constitute a display.
Above-mentioned prior art replaces the TFT of prior art with the high-quality semi-conductor chip of existing mature technology, can obtain higher-quality displayed image, and cost is low easily makes large screen display.But the reliability of electrical connection between chip and the electrode is poor, and complex process, method shown in Figure 2 also are difficult to revise, and a display has a large amount of chips, as long as an electric connection of one of them chip is opened a way or short circuit, whole display is just scrapped.
The present invention is directly installed on chip on the inside surface of first substrate between the image point, and directly is connected with electrode, has both kept the advantage of said method, has overcome their shortcoming again.
Fig. 3 is the structural representation of an embodiment of active display device of large screen of the present invention.12 is first substrate among the figure, and it is second substrate that at least two first electrodes 14,13 are arranged on its inside surface, and at least one second electrode 15 is arranged on its inside surface, and at least one is arranged for the through hole 20 that semi-conductor chip 19 is installed; Display material 16 is arranged between electrode 14 and 15; 17 is the sealing strip of display; Electrode 14,15 and display material 16 constitute at least two and show image points 25, semi-conductor chip 19 is directly installed by the through hole 20 of second substrate on the inside surface of first base stage 12 between each image point, and directly be electrically connected with electrode, be electrically connected thereby form reliably, if pinpoint the problems after the test, chip can also take off and refill, thereby can obtain being electrically connected reliably the active display device of large screen that yield rate is very high.After the chip Installation And Test passes through, in through hole 20, can insert encapsulant 22.On substrate 12 and 13 the limit electrode outlet line 23a and 23b are arranged, to connect display system; The circuit 24 of control usefulness also can be installed on the substrate limit.
The shape of described chip 19 can be rectangle, and described through hole 20 shapes are close with chip, to make things convenient for chip to enter through hole and the electric contact of chip is aimed at electrode contact.
Display medium described in Fig. 3 can be self luminous or non-luminous passive type display medium.For example organic light emission film (OLED or LEP), electroluminescent material (EL), liquid crystal (LCD) etc.
This described semi-conductor chip of Fig. 3, each chip can be to have a transistor or complicated integrated circuit at least, and its material can be silicon, germanium, GaAsP, GaP, GaInAs etc.
Each active component in the described semi-conductor chip can drive a plurality of image points, to reduce the needed number of chips of display device.
The installation method of described chip 19 can be with anisotropy conductiving glue or film 21, also available metal line (33) scolding tin or conducting resinl etc.
Fig. 4 is the local schematic top view of embodiment of the full color matrix display of active display device of large screen of the present invention.12 and 13 is first and second substrates among Fig. 4, and 17 is the sealing strip around the display.25 is the display image point, Figure 4 shows that full color display.Each pixel 25a is by red, blue, green three image points are formed, be useful on the black matrix" (black-matrix) 26 that improves the displayed image contrast between the pixel 25a, chip 19 is installed on first substrate, 12 inside surfaces between the pixel 25a, and be positioned at the through hole 20 of second substrate, after the chip Installation And Test passes through, can insert encapsulant 22 in the through hole 20, chip links to each other with the electrode of each image point through the electric connection line 27 on the first substrate inside surface, chip links to each other with the display system circuit with the data-signal of each row of input through the electric connection line 23a on the first substrate inside surface simultaneously, or links to each other with display system after being installed in the control circuit 24a on first substrate, 12 limits.23b is the line scan signals incoming line on the first substrate inside surface, and 24b is a line control circuit.From the electric signal of display system control circuit via control circuit 24a, 24b, electric connection line 23a, 23b, and each chip 19 remove to control each image point 25 to show picture and text and image.
Described each image point 25 or pixel 25a are shaped as " ten " font, and making has bigger space in order to described chip to be installed between each image point and the pixel.
Display material layer 16 shown in Figure 3, can be liquid crystal, for example TN (twisted nematic), STN (super-twist nematic), PDLC (macromolecular material decentralized), FLCD (ferroelectric liquid crystals), GH (host and guest's liquid crystal), DS (dynamic scattering), HFE different liquid crystal materials such as (mixing field effects).Fig. 5 is an embodiment who adopts the TN liquid crystal.12 is first substrate among Fig. 5, and 14 for being positioned at first electrode on its inside surface, and 13 is second substrate, and 15 for being positioned at second electrode on its inside surface.Electrode 14 and 15 is made by tin indium oxide (ITO) and other conductive material, 28 is the TN liquid crystal layer between two electrodes, and 30 is liquid crystal layer liner (spacer), and 31 is the Lu color chips, 29 is the trend layer (alignmentlayer) on electrode surface, and 26 is black matrix".Two polaroid 32a and 32b lay respectively at two of display.Chip 19 is directly installed on by the through hole on second substrate 20 on the inside surface of first substrate 12 between the image point 25, and 21 for connecting the anisotropy conductiving glue or the films of chip 19 and electrode 14, makes chip and electrode that reliable the electrical connection be arranged.18 is the envelope wall of through hole 20, and the chip Installation And Test can be inserted fluid sealant 22 by the back in through hole.47 is the backlight of display.
Electric signal from the display system control circuit removes to control each image point 25 through chip 19, changes the light transmission of liquid crystal layer, and the light of modulation by backlight is with displayed image.
Fig. 6 is the partial cutaway schematic of the another embodiment of the active liquid crystal indicator of giant-screen of the present invention.It is characterized in that the through hole 20 on second substrate, seal by encapsulant 22 by the back at chip 19 Installation And Tests, and envelope wall 18 that need not be shown in Figure 5.The liquid crystal material 28 that reinjects after encapsulant 22 solidifies, thus can simplify technology and improve monitor resolution.The meaning of digital representative is identical with Fig. 5 shown in other Fig. 6.
Fig. 7 is the partial structurtes diagrammatic cross-section of the another embodiment of giant-screen active-matrix liquid crystal display device of the present invention.It is characterized in that chip 19 is fixed on the inside surface of first substrate 12 between the image point 25 with glue 21a earlier, the back is welded with metal wire 33 chip 19 is connected with electrode 14, similar in appearance to the welding of semiconductor integrated circuit chip.13 is second substrate, and 15 for being positioned at second electrode on its inside surface.16 is the liquid crystal layer between two electrodes, and 26 is black matrix".14 is transparency electrode on the first substrate inside surface among Fig. 7, make by ITO etc., electrode 14 can directly link to each other with chip 19 through sealing wire 33, also can pass through transition conductive layer 34, aluminium film for example, the back is connected with sealing wire 33, chip 19 weld and test pass through after, in through hole 20, insert fluid sealant 22.
Fig. 8 is the partial structurtes synoptic diagram of the embodiment of the active organic light emission of giant-screen of the present invention (OLED or LEP) display.Display material 35 is one deck organic light emission film at least among Fig. 8, and it is positioned on two transparency electrodes 14 on first substrate, 12 inside surfaces at least.Described transparency electrode 14 can be ITO or other conductive material is made.At the top of organic light emission film 35 second electrode 36 is arranged, make by aluminium film, Mg/Ag film or other conductive material.Electrode 14,36 and organic light emission film 35 constitute at least two image points 25; 26 is black matrix"; Each image point can constitute the combining display of a matrix display or character graphics.Have at least a chip 19 to be installed between each image point.Electric signal from the display system control circuit is controlled the luminous of each image point through chip and electrode, to show picture and text and image.
Fig. 8 chips 19 usefulness anisotropy conductiving glues or film 21 are fixing and be electrically connected with electrode 14, and also available other method is as welded wire (shown among Fig. 7 33) or with scolding tin, conducting resinl etc.
22a is an encapsulant among Fig. 8, and this encapsulant also can cover whole display.
Fig. 9 is the partial structurtes synoptic diagram of the embodiment of giant-screen active el display of the present invention.Display material 38 is one deck organic or inorganic electroluminescent membrane at least among Fig. 9, the inorganic EL film can be film or powder luminescent material, it is positioned on two first electrodes 14 on first substrate, 12 inside surfaces at least, at the top of luminescent film 38 second electrode 39 is arranged, described electrode 14 and 39 can be ITO, aluminium film or other conductive material and makes.Electrode 14,39 and luminescent film 38 constitute at least two image points 25, and each image point can constitute the combining display of a matrix display or character graphics.At least one chip 19 is installed between each image point.Electric signal from the display system control circuit is controlled the luminous of each image point through chip and electrode, to show picture and text and image.
Install and after test passed through, second substrate, 41 usefulness fluid sealant 22a were whole display seal at chip 19. Substrate 12 and 41 can be made by glass, pottery or plastics.
Active display device of large screen of the present invention can be made the monolithic display screen, also can make spliced display screen, and promptly a display screen includes at least two spliced display modules.Figure 10 a is one and makes the partial top view of the display module of display material with liquid crystal that Figure 10 b is its diagrammatic cross-section along A-A.It shown in the figure example of a panchromatic matrix display module.25 is image point, and red, blue, green three image points constitute a pixel 25a, and each module has n row (C1 among the figure, C2 ... Cn) and m capable (R1 among the figure, R2 ... Rm) pixel.It is electric connection line between chip and the electrode 14 that chip 19,27 is arranged between each pixel 25a.There is at least one through hole 20 to be used to install at least one chip 19 on second substrate; 42 of at least one through holes be used between the module and module and display system control circuit between be electrically connected.Connecting line 48 is a column signal line, and 44 is row signal line, and they are positioned on the first substrate inside surface, and connecting line 44 links to each other with other module and display system control circuit with electric conductor 43 through each through hole 42 with 48; Second electrode 15 is also used the electric connection line that links to each other with control circuit with 43 similar methods.Through hole 42 is close with the shape of electric conductor 43, enters through hole and aligning to make things convenient for electric conductor 43; 43 also can be conducting resinl, as the silver slurry, directly links to each other with electrode 44.46 is the filling orifice of liquid crystal material.The meaning of other digital representative is identical with Fig. 5 among Figure 10 a and the 10b.Wherein 17 is the envelope wall of display module.When two substrates 12 and 13 during all with plastics or plastic sheeting, fusing substrate and the forming when envelope wall 17 of display can cut display by laser beam, formed envelope wall is not only firm, and can be very narrow very even, can improve the display physical strength and be used to make high resolution display; Also available laser beam punching forms by " rivet " at display black matrix" place, shown among Figure 10 a 49, improves the display physical strength.
Figure 11 a and 11b then are the synoptic diagram of embodiment of a module of the spliced display of making display material with the organic or inorganic electroluminescent material.Identical among the meaning of numeral among Figure 11 a and letter representative and Figure 10 a.Figure 11 b is the diagrammatic cross-section of Figure 11 a along B-B; Display material 38 is one deck organic or inorganic electroluminescent membrane at least among Figure 11 b, the inorganic EL film can be film or powder luminescent material, it is positioned on two first electrodes 14 on first substrate, 12 inside surfaces at least, and pixel 25a is made of the luminescent film 38 of red, blue, green three looks; 26 is black matrix"; 31 is the Lu color chips; At least one chip 19 is installed in 20a between the pixel; Between at least one pixel 42a be used between the module and module and display system control circuit between be electrically connected, shown among the figure 43 and 45.Chip 19 usefulness anisotropy conductiving glues or film 21 are fixed on first substrate, 12 inside surfaces and with electrode 14 and are electrically connected, and also available other method connects as welded wire (shown among Fig. 7 33) or with scolding tin.Install and after test passed through, second substrate, 41 usefulness fluid sealant 22a were whole display seal at chip 19.
The present invention compared with prior art has following features: one, and semiconductor chip is directly with electric The utmost point is electrically connected, the reliability height; Two, can make the very big panchromatic active display screen of screen, for example big The screen wall hung television; Three, if defectiveness behind the chip Installation And Test can take off refitting, yield rate High; Four, one chips can be controlled a plurality of pixels; Five, can be used for making liquid crystal, OLED, EL etc. The active display screen of multiple giant-screen; Six, cost is low.
Claims (45)
1, a kind of active display device of large screen is characterized in that it comprises at least one first substrate (12), has one first electrode (14) at least on its inside surface; One second substrate (13), its inside surface have at least one second electrode (15), have one deck display material (16) at least between electrode (14) and electrode (15), and electrode (14,15) and display material (16) constitute at least two and show image point (25); Have at least a semi-conductor chip (19) to be directly installed between the image point, and be electrically connected with each electrode by the through hole on second substrate (13); Electric signal from the display system control circuit removes to control each image point (25) to show picture and text and image through chip (19).
2, active display device of large screen as claimed in claim 1, it is characterized in that described semi-conductor chip (19) is to be installed between the demonstration image point that is made of electrode and display material with anisotropy conductiving glue or film (21), and be electrically connected with each electrode, described display material (16) can be a self-luminescent material, as Organic Light Emitting Diode (OLED), organic light emission film (OLP) and electroluminescence (EL); Can be the passive type display material also, as liquid crystal.
3, active display device of large screen as claimed in claim 2 is characterized in that described semi-conductor chip (19) can be at least one transistor or complicated integrated circuit, and a chip (19) directly is electrically connected and controls at least an image point with electrode.
4, active display device of large screen as claimed in claim 3, the shape that it is characterized in that described chip (19) can be rectangle, the shape of the through hole (20) on described second substrate is close with chip (19), to make things convenient for chip to enter through hole and the electric contact of chip is aimed at electrode contact.
5, active display device of large screen as claimed in claim 4 is characterized in that described electrode (14,15) is for tin indium oxide, aluminium film, Cr/Cu/Cr, MgAg film, silver slurry layer or other conductive materials are made and be set at respectively on the inside surface of two substrates.
6, active display device of large screen as claimed in claim 5 is characterized in that described two substrates (12,13) is glass, pottery or plastics, and at least one is transparent in two substrates.
7, active display device of large screen as claimed in claim 6, at least one is a plastic base to it is characterized in that described two substrates (12,13), and it can be hard or soft, and its material can be polyester, polycarbonate, PMMA, PES, organic glass.
8, as claim 1 or 2 or 3 or 4 or 5 or 6 or 7 described active display device of large screen, it is characterized in that the described demonstration image point (25) that constitutes by electrode and display material, can be arranged in the X-Y rectangular, to constitute matrix display; Also can form a pixel and constitute the full color matrix display by red, blue, green three image points; Also can be by the character of some monochromes or polychrome, graphical set is synthesized hybrid display.
9, active display device of large screen as claimed in claim 8, what it is characterized in that described each image point and pixel is shaped as " ten " font, and making has bigger space in order to described chip to be installed between each image point and the pixel.
10, a kind of active display device of large screen is characterized in that it comprises at least one first substrate (12), has two first electrodes (14) at least on its inside surface; One second substrate (13), its inside surface has at least one second electrode (15), have one deck liquid crystal layer (28) at least as display material between electrode (14) and electrode (15), electrode (14,15) and liquid crystal (28) constitute at least two and show image point (25); Have at least a semi-conductor chip to be directly installed on the first substrate inside surface between each image point, and be electrically connected with each electrode by the through hole (20) on second substrate (13); Electric signal from the display system control circuit removes to control each image point (25) to show picture and text and image through chip (19).
11, active display device of large screen as claimed in claim 10, it is characterized in that described semi-conductor chip (19) is to be installed between the demonstration image point that is made of electrode and display material with anisotropy conductiving glue or film (21) or welded wire or with scolding tin, conducting resinl, and be electrically connected with each electrode.
12, active display device of large screen as claimed in claim 11 is characterized in that described semi-conductor chip (19) can be at least one transistor or complicated integrated circuit, and a chip (19) is controlled an image point at least.
13, active display device of large screen as claimed in claim 12 is characterized in that described semi-conductor chip (19) directly is electrically connected with electrode, and each active component in it can drive a plurality of image points, to reduce the needed number of chips of display device.
14, active display device of large screen as claimed in claim 13 is characterized in that described electrode (14,15) is for tin indium oxide, aluminium film, Cr/Cu/Cr, MgAg film, silver slurry layer or other conductive materials are made and be set at respectively on the inside surface of two substrates.
15, active display device of large screen as claimed in claim 14 is characterized in that described two substrates (12,13) is glass or plastics, and at least one is transparent in two substrates.
16, active display device of large screen as claimed in claim 15, at least one is a plastic base to it is characterized in that described two substrates (12,13), it can be hard or soft, and as plastic sheeting, its material can be polyester, polycarbonate, PMMA, PES, organic glass; When making soft display screen with plastic sheeting, can punch with laser beam at the electrodeless place of display screen, allow the plastic sheeting fusing form firm " rivet " (49), to form very firm plastic sheeting LCD.
17, as claim 10 or 11 or 12 or 13 or 14 or 15 or 16 described active display device of large screen, it is characterized in that described display device is a full color liquid crystal indicator, liquid crystal material (28) is the TN liquid crystal, favourable pad (30) electrode (14 in the liquid crystal layer, 15) there is trend layer (29) on the surface, also have color filter layer (31) and black matrix" (26) on the electrode inside surface, two substrates (12,13) polaroid (32a is arranged on the outside surface, 32b), second substrate has back-illumination source (47) outward, thereby constitutes the full color giant-screen active-matrix liquid crystal display of a transmission-type.
18, active display device of large screen as claimed in claim 17, it is characterized in that the described liquid crystal display material of one deck at least can also be other liquid crystal, as TN (twisted nematic), STN (super-twist nematic), PDLC (macromolecular material decentralized), FLCD (ferroelectric liquid crystals) GH (host and guest's liquid crystal), DS (dynamic scattering), HFE different liquid crystal materials such as (mixing field effects).
19,, it is characterized in that described second substrate has a reflecting plate outward, or electrode (15) itself is exactly a reflective electrode, thereby constitutes an effective liquid crystal display of reflective giant-screen as claim 17 or 18 described active display device of large screen.
20, active display device of large screen as claimed in claim 19 is characterized in that described second electrode (15) is translucent, half reflection, thereby constitutes the LCD of a transmission, reflection dual-purpose.
21, a kind of active display device of large screen is characterized in that it comprises at least one first substrate (12), has two first electrodes (14) at least on its inside surface; Have one deck organic electroluminescent film (35) on the electrode (14) at least, the luminescent film end face has at least one second electrode (15), and second electrode (15) is positioned at the inside surface of second substrate (13); Constitute at least two demonstration image points (25) at electrode (14,15) and luminescent film (35); Have at least a semi-conductor chip to be directly installed on the first substrate inside surface between each image point, and be electrically connected with each electrode by the through hole (20) on second substrate (13); Electric signal from the display system control circuit removes to control each image point (25) to show picture and text and image through chip (19).
22, active display device of large screen as claimed in claim 21, it is characterized in that described semi-conductor chip (19) is to be installed between the demonstration image point that is made of electrode and luminescent film with anisotropy conductiving glue or film (21) or welded wire or with scolding tin, conducting resinl, and be electrically connected with each electrode.
23, active display device of large screen as claimed in claim 22 is characterized in that described semi-conductor chip (19) can be at least one transistor or complicated integrated circuit, and a chip (19) is controlled an image point at least.
24, active display device of large screen as claimed in claim 23 is characterized in that described semi-conductor chip (19) directly is electrically connected with electrode, and each active component in it can drive a plurality of image points, to reduce the needed number of chips of display device.
25, active display device of large screen as claimed in claim 24 is characterized in that described electrode (14,15) is for tin indium oxide, aluminium film, Cr/Cu/Cr, MgAg film, silver slurry layer or other conductive materials are made and be set at respectively on the inside surface of two substrates.
26, active display device of large screen as claimed in claim 25 is characterized in that described two substrates (12,13) is glass or plastics, and at least one is transparent in two substrates.
27, active display device of large screen as claimed in claim 26, at least one is a plastic base to it is characterized in that described two substrates (12,13), it can be hard or soft, and as plastic sheeting, its material can be polyester, polycarbonate, PMMA, PES, organic glass.
28, as claim 21 or 22 or 23 or 24 or 25 or 26 or 27 described active display device of large screen, it is characterized in that described display device can be made into the display of monolithic; Also can be made into the active electroluminescence display device of the spliced giant-screen that is spliced into by polylith,
29, active display device of large screen as claimed in claim 28 is characterized in that luminescent film (35) in the described display device at least a illuminant colour, as is made of formation monochrome, polychrome or full-color display red, blue, green three look image points.
30, a kind of active display device of large screen is characterized in that it comprises at least one first substrate (12), has two first electrodes (14) at least on its inside surface; One second substrate (13), its inside surface has at least one second electrode (15), have one deck electroluminescence layer (35) at least as display material between electrode (14) and electrode (15), electrode (14,15) and electroluminescence layer (35) constitute at least two and show image point (25); Have at least a semi-conductor chip to be directly installed on the first substrate inside surface between each image point, and be electrically connected with each electrode by the through hole (20) on second substrate (13); Electric signal from the display system control circuit removes to control each image point (25) to show picture and text and image through chip (19).
31, active display device of large screen as claimed in claim 30, it is characterized in that described semi-conductor chip (19) can be at least one transistor or complicated integrated circuit, a chip (19) is controlled a demonstration image point that is made of electrode and electroluminescence layer at least.
32, active display device of large screen as claimed in claim 31 is characterized in that described electrode (14,15) is for tin indium oxide, aluminium film, Cr/Cu/Cr, MgAg film, silver slurry layer or other conductive materials are made and be set at respectively on the inside surface of two substrates.
33, active display device of large screen as claimed in claim 32 is characterized in that described two substrates (12,13) is glass, pottery or plastics, and at least one is transparent in two substrates.
34, active display device of large screen as claimed in claim 33, at least one is a plastic base to it is characterized in that described two substrates (12,13), it can be hard or soft, and as plastic sheeting, its material can be polyester, polycarbonate, PMMA, PES, organic glass.
35, as claim 30 or 31 or 32 or 33 or 34 described active display device of large screen, it is characterized in that described display device can be made into the display of monolithic, also can be made into the active el display device of spliced giant-screen that is spliced into by polylith.
36, active display device of large screen as claimed in claim 35 is characterized in that the electroluminescence layer (38) in the described display device is one deck organic or inorganic electroluminescent membrane at least, and inorganic material can be film or powder electroluminescence.
37, active display device of large screen as claimed in claim 36 is characterized in that described electroluminescence layer (38) is at least a illuminant colour, as being made up of red, blue, green three look image points, constitutes monochrome, polychrome or full color display.
38, a kind of active display device of large screen is characterized in that it comprises at least two display modules, and each module comprises at least one first substrate (12), has two first electrodes (14) on its inside surface at least; One second substrate (13), its inside surface have at least one second electrode (15), have one deck display material (16) at least between electrode (14) and electrode (15), and electrode (14,15) and display material (16) constitute at least two and show image point (25); Have at least a semi-conductor chip to be directly installed on the first substrate inside surface between the image point, and be electrically connected with each electrode by the through hole (20) on second substrate (13); Have at least one the through hole (42) on second substrate (13) be used between each module and and the display system circuit between electrical connection; Electric signal from the display system control circuit removes to control each image point (25) to show picture and text and image through chip (19).
39, active display device of large screen as claimed in claim 38, it is characterized in that described semi-conductor chip (19) is to be installed between the demonstration image point that is made of electrode and display material with anisotropy conductiving glue or film (21) or welded wire or with scolding tin, conducting resinl, and be electrically connected with each electrode.
40, active display device of large screen as claimed in claim 39, it is characterized in that described semi-conductor chip (19) can be at least one transistor or complicated integrated circuit, a chip (19) is controlled a demonstration image point that is made of electrode and display material at least.
41, active display device of large screen as claimed in claim 40 is characterized in that described electrode (14,15) is for tin indium oxide, aluminium film, Cr/Cu/Cr, MgAg film, silver slurry layer or other conductive materials are made and be set at respectively on the inside surface of two substrates.
42, active display device of large screen as claimed in claim 41 is characterized in that described two substrates (12,13) is glass or plastics, and at least one is transparent in two substrates.
43, active display device of large screen as claimed in claim 42, at least one is a plastic base to it is characterized in that described two substrates (12,13), it can be hard or soft, and as plastic sheeting, its material can be polyester, polycarbonate, PMMA, PES, organic glass; When making soft display screen with plastic sheeting, can punch with laser beam at the electrodeless place of display screen, allow the plastic sheeting fusing form firm " rivet " (49), to form very firm plastic sheeting LCD.
44, active display device of large screen as claimed in claim 43, it is characterized in that described two substrates is plastic plate or film, display module is provided with sealing-in limit (17), and it allows the fusing of two baseplate materials with the laser beam cutting and forms, thereby it is same and narrow and uniform envelope wall can be used for making the high resolution large screen display to obtain the jail.
45, active display device of large screen as claimed in claim 44, the display material that it is characterized in that described display can be a self-luminescent material, as organic or inorganic electroluminescence film, powder or thin-film electroluminescence (TFEL); Can be the passive type display material also, as liquid crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001149288A CN1192337C (en) | 2000-03-16 | 2000-03-16 | Active display device of large screen |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001149288A CN1192337C (en) | 2000-03-16 | 2000-03-16 | Active display device of large screen |
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| CN1314669A true CN1314669A (en) | 2001-09-26 |
| CN1192337C CN1192337C (en) | 2005-03-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB001149288A Expired - Fee Related CN1192337C (en) | 2000-03-16 | 2000-03-16 | Active display device of large screen |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100461979C (en) * | 2002-05-03 | 2009-02-11 | 乐金显示有限公司 | Organic electroluminescence display device and its mfg. method |
| CN102915707A (en) * | 2006-04-14 | 2013-02-06 | 株式会社半导体能源研究所 | Display device and method for driving the same |
| CN105607270A (en) * | 2016-01-05 | 2016-05-25 | 京东方科技集团股份有限公司 | Display apparatus and three-dimensional display method thereof |
| CN106710461A (en) * | 2017-02-20 | 2017-05-24 | 吴宇嘉 | Transparent substrate full-color LED (light emitting diode) display screen and production technology |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3564741B1 (en) * | 2017-01-04 | 2023-11-22 | Shih-Hsien Tseng | Pixel unit structure |
-
2000
- 2000-03-16 CN CNB001149288A patent/CN1192337C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100461979C (en) * | 2002-05-03 | 2009-02-11 | 乐金显示有限公司 | Organic electroluminescence display device and its mfg. method |
| CN102915707A (en) * | 2006-04-14 | 2013-02-06 | 株式会社半导体能源研究所 | Display device and method for driving the same |
| US9189997B2 (en) | 2006-04-14 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| CN105607270A (en) * | 2016-01-05 | 2016-05-25 | 京东方科技集团股份有限公司 | Display apparatus and three-dimensional display method thereof |
| CN105607270B (en) * | 2016-01-05 | 2018-08-03 | 京东方科技集团股份有限公司 | A kind of display device and its 3 D displaying method |
| US10558054B2 (en) | 2016-01-05 | 2020-02-11 | Boe Technology Group Co., Ltd. | Display apparatus and three-dimensional display method thereof |
| CN106710461A (en) * | 2017-02-20 | 2017-05-24 | 吴宇嘉 | Transparent substrate full-color LED (light emitting diode) display screen and production technology |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1192337C (en) | 2005-03-09 |
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