CN1313640C - 等离子体增强式化学气相沉积处理方法 - Google Patents
等离子体增强式化学气相沉积处理方法 Download PDFInfo
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- CN1313640C CN1313640C CNB031510221A CN03151022A CN1313640C CN 1313640 C CN1313640 C CN 1313640C CN B031510221 A CNB031510221 A CN B031510221A CN 03151022 A CN03151022 A CN 03151022A CN 1313640 C CN1313640 C CN 1313640C
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Priority Applications (1)
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CNB031510221A CN1313640C (zh) | 2003-09-18 | 2003-09-18 | 等离子体增强式化学气相沉积处理方法 |
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CNB031510221A CN1313640C (zh) | 2003-09-18 | 2003-09-18 | 等离子体增强式化学气相沉积处理方法 |
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Publication Number | Publication Date |
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CN1598049A CN1598049A (zh) | 2005-03-23 |
CN1313640C true CN1313640C (zh) | 2007-05-02 |
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CNB031510221A Expired - Lifetime CN1313640C (zh) | 2003-09-18 | 2003-09-18 | 等离子体增强式化学气相沉积处理方法 |
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Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100456436C (zh) * | 2006-09-18 | 2009-01-28 | 中芯国际集成电路制造(上海)有限公司 | 一种减小钝化晶片表面漏电电流的方法及其反应装置 |
CN101333653B (zh) * | 2007-06-29 | 2010-05-19 | 中芯国际集成电路制造(上海)有限公司 | 一种可避免产生包状缺陷的等离子化学气相沉积方法 |
TWI641292B (zh) | 2008-08-04 | 2018-11-11 | Agc北美平面玻璃公司 | 電漿源 |
CN102420109B (zh) * | 2011-06-15 | 2014-12-10 | 上海华力微电子有限公司 | 一种提高mim器件电容均匀性的方法 |
CN102820221A (zh) * | 2012-07-03 | 2012-12-12 | 上海华力微电子有限公司 | 低温二氧化硅薄膜的形成方法 |
CN102800569B (zh) * | 2012-09-11 | 2015-11-04 | 上海华力微电子有限公司 | 基于硅烷的二氧化硅膜形成方法以及半导体器件制造方法 |
CN107615888B (zh) | 2014-12-05 | 2022-01-04 | 北美Agc平板玻璃公司 | 利用宏粒子减少涂层的等离子体源和将等离子体源用于沉积薄膜涂层和表面改性的方法 |
MY192286A (en) | 2014-12-05 | 2022-08-17 | Agc Glass Europe S A | Hollow cathode plasma source |
CN105140422A (zh) * | 2015-07-29 | 2015-12-09 | 沈阳拓荆科技有限公司 | 一种低温沉积氮化硅薄膜的方法 |
CN105401128A (zh) * | 2015-10-26 | 2016-03-16 | 上海华力微电子有限公司 | 一种消除无氮抗反射层bump颗粒生成的工艺 |
US9721765B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Plasma device driven by multiple-phase alternating or pulsed electrical current |
US9721764B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Method of producing plasma by multiple-phase alternating or pulsed electrical current |
US10573499B2 (en) | 2015-12-18 | 2020-02-25 | Agc Flat Glass North America, Inc. | Method of extracting and accelerating ions |
US10242846B2 (en) | 2015-12-18 | 2019-03-26 | Agc Flat Glass North America, Inc. | Hollow cathode ion source |
CN110684966A (zh) * | 2019-10-16 | 2020-01-14 | 江苏鲁汶仪器有限公司 | 一种pecvd方式生长致密薄膜的方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0431878A2 (en) * | 1989-12-04 | 1991-06-12 | Motorola, Inc. | Process for forming high purity thin films |
EP0780491A1 (en) * | 1995-12-19 | 1997-06-25 | International Business Machines Corporation | Process for reducing substrate damage during PECVD |
CN1189859A (zh) * | 1995-07-10 | 1998-08-05 | 沃特金斯·约翰逊公司 | 等离子体增强的化学处理反应器和方法 |
US6303517B1 (en) * | 1999-07-27 | 2001-10-16 | Ball Semiconductor, Inc. | Fast deposition on spherical-shaped integrated circuits in non-contact CVD process |
US20020039625A1 (en) * | 1999-09-30 | 2002-04-04 | Novellus Systems, Inc. | Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor |
-
2003
- 2003-09-18 CN CNB031510221A patent/CN1313640C/zh not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0431878A2 (en) * | 1989-12-04 | 1991-06-12 | Motorola, Inc. | Process for forming high purity thin films |
CN1189859A (zh) * | 1995-07-10 | 1998-08-05 | 沃特金斯·约翰逊公司 | 等离子体增强的化学处理反应器和方法 |
EP0780491A1 (en) * | 1995-12-19 | 1997-06-25 | International Business Machines Corporation | Process for reducing substrate damage during PECVD |
US6303517B1 (en) * | 1999-07-27 | 2001-10-16 | Ball Semiconductor, Inc. | Fast deposition on spherical-shaped integrated circuits in non-contact CVD process |
US20020039625A1 (en) * | 1999-09-30 | 2002-04-04 | Novellus Systems, Inc. | Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor |
Non-Patent Citations (3)
Title |
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射频-直流等离子体增强化学气相沉积设备的研制 ***,程宇航,吴一平,乔学亮,真空与低温,第4卷第1期 1998 * |
等离子体增强化学气相低温沉积碳化硅薄膜及其性质研究 姜利军,陈翔,王叙洪,徐立强,功能材料与器件学报,第5卷第1期 1999 * |
等离子体增强化学气相低温沉积碳化硅薄膜及其性质研究 姜利军,陈翔,王叙洪,徐立强,功能材料与器件学报,第5卷第1期 1999;射频-直流等离子体增强化学气相沉积设备的研制 ***,程宇航,吴一平,乔学亮,真空与低温,第4卷第1期 1998 * |
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CN1598049A (zh) | 2005-03-23 |
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