CN1301555C - 使集成电路可承受高压静电放电的氧化铟锡走线方法 - Google Patents
使集成电路可承受高压静电放电的氧化铟锡走线方法 Download PDFInfo
- Publication number
- CN1301555C CN1301555C CNB021505195A CN02150519A CN1301555C CN 1301555 C CN1301555 C CN 1301555C CN B021505195 A CNB021505195 A CN B021505195A CN 02150519 A CN02150519 A CN 02150519A CN 1301555 C CN1301555 C CN 1301555C
- Authority
- CN
- China
- Prior art keywords
- integrated circuit
- indium oxide
- tin indium
- module interface
- electrostatic discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Liquid Crystal (AREA)
- Elimination Of Static Electricity (AREA)
Abstract
Description
项次 | 符号 | 特性 | 功能 |
1 | C86 | 输入(Input) | 80/68并列选择 |
2 | VSS | 数位/低 | 地线,参考准位。 |
3 | V5 | 提供(Supply) | 最负升电压。 |
4 | V4 | 提供(Supply) | Bias参考电压 |
5 | V3 | 提供(Supply) | Bias参考电压 |
6 | V2 | 提供(Supply) | Bias参考电压 |
7 | V1 | 提供(Supply) | Bias参考电压 |
8 | CAP2+ | 输出(Output) | 升压电路的电容端。 |
9 | CAP2- | 输出(Output) | 升压电路的电容端。 |
10 | CAP1- | 输出(Output) | 升压电路的电容端。 |
11 | VAP1+ | 输出(Output) | 升压电路的电容端。 |
12 | CAP3- | 输出(Output) | 升压电路的电容端。 |
13 | VOUT | I/O | 操作电压。 |
14 | VSS | Low | 地线。 |
15 | VDD | High | 电源。 |
16 | D7 | H/L | 资料总线。 |
17 | D6 | H/L | 资料总线。 |
18 | D5 | H/L | 资料总线。 |
19 | D4 | H/L | 资料总线。 |
20 | D3 | H/L | 资料总线。 |
21 | D2 | H/L | 资料总线。 |
22 | D1 | H/L | 资料总线。 |
23 | D0 | H/L | 资料总线。 |
24 | /RD,E | I/O | 控制讯号线 |
25 | /WR,R/W | I/O | 控制讯号线 |
26 | A0 | 输入(Input) | 控制讯号线 |
27 | /RES | 输入(Input) | 重置讯号线。 |
28 | /CS1 | 输入(Input) | 晶片选择讯号。 |
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB021505195A CN1301555C (zh) | 2002-11-12 | 2002-11-12 | 使集成电路可承受高压静电放电的氧化铟锡走线方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB021505195A CN1301555C (zh) | 2002-11-12 | 2002-11-12 | 使集成电路可承受高压静电放电的氧化铟锡走线方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1501495A CN1501495A (zh) | 2004-06-02 |
CN1301555C true CN1301555C (zh) | 2007-02-21 |
Family
ID=34233982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021505195A Expired - Fee Related CN1301555C (zh) | 2002-11-12 | 2002-11-12 | 使集成电路可承受高压静电放电的氧化铟锡走线方法 |
Country Status (1)
Country | Link |
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CN (1) | CN1301555C (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101327491B1 (ko) * | 2006-11-28 | 2013-11-08 | 엘지디스플레이 주식회사 | 영상표시장치의 전원전압생성회로 |
CN101630078B (zh) * | 2008-07-17 | 2010-12-15 | 胜华科技股份有限公司 | 液晶显示面板 |
CN106094370B (zh) * | 2016-08-17 | 2019-11-05 | 武汉华星光电技术有限公司 | ***电路静电释放防护方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5311058A (en) * | 1991-11-29 | 1994-05-10 | Trw Inc. | Integrated circuit power distribution system |
JPH11163247A (ja) * | 1997-12-01 | 1999-06-18 | Hitachi Ltd | 半導体装置およびリードフレーム |
US6246113B1 (en) * | 1998-02-09 | 2001-06-12 | Windbond Electronics Corp. | Integrated circuit package architecture with improved electrostatic discharge protection |
CN1377086A (zh) * | 2001-03-28 | 2002-10-30 | 华邦电子股份有限公司 | 避免静电放电破坏的导架及其方法 |
-
2002
- 2002-11-12 CN CNB021505195A patent/CN1301555C/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5311058A (en) * | 1991-11-29 | 1994-05-10 | Trw Inc. | Integrated circuit power distribution system |
JPH11163247A (ja) * | 1997-12-01 | 1999-06-18 | Hitachi Ltd | 半導体装置およびリードフレーム |
US6246113B1 (en) * | 1998-02-09 | 2001-06-12 | Windbond Electronics Corp. | Integrated circuit package architecture with improved electrostatic discharge protection |
CN1377086A (zh) * | 2001-03-28 | 2002-10-30 | 华邦电子股份有限公司 | 避免静电放电破坏的导架及其方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1501495A (zh) | 2004-06-02 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20040602 Assignee: United Win (China) Technology Ltd. Assignor: Shenghua Science and Technology Co., Ltd. Contract record no.: 2012990000589 Denomination of invention: Tin indium oxide wiring method for electrostatic discharging of integrated circuit bearable high-voltage Granted publication date: 20070221 License type: Exclusive License Record date: 20120813 |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070221 Termination date: 20141112 |
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EXPY | Termination of patent right or utility model |