CN1290030A - Method for promoting releasement of semiconductor sheets - Google Patents
Method for promoting releasement of semiconductor sheets Download PDFInfo
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- CN1290030A CN1290030A CN 99120766 CN99120766A CN1290030A CN 1290030 A CN1290030 A CN 1290030A CN 99120766 CN99120766 CN 99120766 CN 99120766 A CN99120766 A CN 99120766A CN 1290030 A CN1290030 A CN 1290030A
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- polishing pad
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
A method for releasing semiconductor wafer from polishing pad includes such steps as applying size onto polishing pad, rotating the polishing pad while pressing the wafer for polishing it, introducing water to polishing pad, accelerating the polishing pad, removing part of size, reducing pressure on wafer and moving the wafer out.
Description
The application relates to semi-conductive manufacturing, particularly discharges improving one's methods of semiconductor wafer from polishing pad.
Semiconductor processes comprises polishing of semiconductor wafers.Usually, polished semiconductor comprises chemico-mechanical polishing or CMP.In order to polish, semiconductor wafer is placed on the polishing pad usually.Platen supports polishing pad during the processing.Using mechanical carrier wafer to be placed on polishing pad is provided with on the platen on it.Platen often rotation carries out polished wafer.In addition, carrier also rotates.During the polishing, comprise that the slurry of grinding-material is incorporated on the polishing pad, for example silica dioxide granule and corrosion wafer surface provide the chemical reagent of polished surface on wafer.Polishing pad comprises the hole of transmitting slurry and distributing slurry on wafer.
Normally used slurry has high viscosity.When polishing finished, carrier was removed wafer from polishing pad and is cleaned or only unload.The viscosity of slurry makes removes polishing pad from wafer and becomes very difficult, and this is because the viscosity of slurry pastes on the wafer polishing pad.If wafer pastes on the polishing pad, can cause wafer to come off like this, make damage to wafers or even broken.In addition, when carrier was attempted removing it, the viscosity of slurry still contacted wafer with polishing pad.So also can cause damage to wafers or fragmentation.
With reference to figure 1, the carrier 10 of demonstration is used for polished wafer 12.Wafer 12 is releasably connected to carrier 10, and damage wafers 12 is not removed wafer 12 thus.Carrier 10 moves in the direction of arrow " B " wafer 12 is contacted with polishing pad 14.Polishing pad 14 is arranged on the platen 16.Platen 16 comprises a turntable, and the mechanical polishing campaign of the polished wafer 12 that will introduce is provided here.
With reference to figure 2, after the contact polishing pad 14, shown in arrow " A ", rotate wafers 12 by carrier 10.In addition, the direction inward turning rotary table plate 16 at arrow " C " when the abrasive material in being included in slurry 18 is incorporated into polishing pad 14 thus, carries out mechanical polishing.Slurry 18 preferably includes silicon dioxide or alumina abrasive, more than the about 100A of basic granules size.Slurry 18 little by little is provided on the polishing pad 14 from slurry feeder 20.Pressure P is applied on the carrier 10, provides normal force to help polished wafer 12.
With reference to figure 3, when polishing finished, slurry 18 no longer was incorporated into polishing pad 14.Carry out the water polishing step, water 22 is incorporated on the polishing pad 14.According to the viscosity of slurry, at carrier 10 from filling up on 14 before the separating wafer 12, platen 15 in the direction of arrow " C " with speed rotation 1-60 second of about 50rpm.Yet slurry has very high viscosity usually, and the water of introducing is not enough to produce and fully separates with polishing pad 14.
Damage to wafer has reduced output, by the reduction that is difficult to also to have caused from the delay that polishing pad is removed the clean wafers that wafer causes wafer yield.Therefore, need to promote from the method for polishing pad release wafer after a kind of polishing step.
According to the present invention, a kind of method that discharges semiconductor wafer from polishing pad is disclosed.This method may further comprise the steps: slurry is applied to polishing pad; Rotate the polishing pad that has applied slurry on it, exert pressure to wafer simultaneously, utilize the slurry polished wafer thus; Water is incorporated into polishing pad; Increase the rotary speed of polishing pad, remove the part slurry; During increasing the rotary speed step, reduce pressure, can comprise by applying the back pressure that vacuum pressure reduces wafer, to prevent further polishing basically; And remove wafer from polishing pad.
Disclosed another may further comprise the steps from the method that polishing pad discharges semiconductor wafer: releasedly semiconductor wafer is fixed to carrier; Slurry is applied to polishing pad; Rotation carrier and wafer; Exert pressure to wafer simultaneously and make its polishing pad that relies on slurry, use the slurry polished wafer thus; Rotating polishing pad makes the further polished wafer of slurry; Water is incorporated into polishing pad finishes polishing; Increase the rotary speed of wafer and polishing pad, remove the part slurry; During the step that increases rotary speed, reduce pressure, can comprise that this pressure makes wafer press to polishing pad by applying the back pressure that vacuum pressure reduces wafer, to prevent further polishing basically; And, remove wafer by promoting carrier from polishing pad.
In another method, the step that rotating polishing pad is exerted pressure simultaneously comprises with the step of per minute about 20 to about 100 speed of rotation rotating polishing pads that change.The step that rotating polishing pad is exerted pressure simultaneously is included in and applies about 2 steps to the pressure of 8psi between wafer and the polishing pad.The step that water is incorporated into polishing pad comprises that cut-out provides the step of slurry to polishing pad.The rotary speed that increases polishing pad with the step of removing the part slurry comprise rotary speed with polishing pad increase about 1.1 times to about 3 times step.The rotary speed that increases polishing pad comprises that with the step of removing the part slurry rotary speed with polishing pad is increased to the step that per minute about 22 forwards about 300 commentaries on classics of per minute to.The step that reduces pressure comprises that pressure is reduced to about 0 to be arrived between about 3psi, preferably is essentially 0psi.Can also comprise surfactant is incorporated into polishing pad with separating slurry.
In a method also, wafer and polishing pad can rotate, can comprise rotary speed with wafer and polishing pad increase about 1.1 times to about 3 times step.The rotary speed that increases wafer and polishing pad comprises that with the step of removing the part slurry rotary speed with wafer is increased to the step that per minute about 22 forwards about 300 commentaries on classics of per minute to.The rotary speed that increases wafer and polishing pad comprises that with the step of removing the part slurry rotary speed with polishing pad is increased to the step that per minute about 22 forwards about 300 commentaries on classics of per minute to.
From below with reference to the detailed introduction of accompanying drawing to exemplary embodiment, these and other objects of the present invention, characteristics and advantage will become obviously.
At length introduce preferred embodiment with reference to following figure:
Fig. 1 for be installed on the carrier according to prior art and from polishing pad upgrade semiconductor wafer;
Fig. 2 is according to the carrier of prior art Fig. 1 and the profile of semiconductor wafer, shows the situation that wafer contacts the polishing pad that slurry is arranged on it;
Fig. 3 is according to the carrier of prior art Fig. 1 and the profile of semiconductor wafer, shows wafer and contacts the situation of introducing the polishing pad of water on it;
Fig. 4 is the profile of carrier and semiconductor wafer according to the present invention, shows the situation that wafer contacts the polishing pad that slurry is arranged on it; And
Fig. 5 is the method according to this invention flow chart.
The present invention relates to semi-conductive manufacturing, particularly promote method after the polishing step from polishing pad semiconductor-on-insulator wafer.The polishing step of introducing when method provided by the invention finishes based on polished wafer has improved the productive rate of output and wafer.Polishing step comprises from polishing pad removes wafer water polishing before.In addition, for full-bodied slurry, additional step comprises the speed of rotation that increases platen or rotating platform and reduces the normal force that carrier applies.Thus, the easier wafer of removing of the present invention has increased the productive rate of output and wafer, has prevented the damage to wafer, and has reduced the retardation before the clean wafers.
With reference now to accompanying drawing, at length introduce, wherein in several figure, similarly reference number is represented similar or components identical, and in Fig. 4, the carrier 100 of demonstration is used for polished wafer 102.Wafer 102 is preferably the formed thereon or manufacturing semiconductor wafer thereon of function element.Wafer 102 is coupled to carrier 100 releasedly, and damage wafers 102 is not removed wafer 102 thus.With reference to Fig. 1 and 2, carry out the polishing of wafer 102 as mentioned above.During polishing, wafer 102 contacts are arranged on the polishing pad 104 on the platen 106.Platen 106 comprises turntable, and the mechanical polishing campaign of polished wafer 102 is provided.As mentioned above, carrier 100 rotates wafer 102 shown in arrow " D ".In addition, platen 106 when the abrasive material in being included in slurry 108 is incorporated on the polishing pad 104 thus, carries out mechanical polishing in the direction rotation of arrow " E ".Slurry 108 preferably includes silicon dioxide or alumina abrasive, about 100 of basic granules size or bigger.Slurry 108 little by little is provided on the polishing pad 104 from slurry feeder 120.Pressure P
RBe applied on the carrier 100, provide normal force to help polished wafer 102.When from the surface finish of wafer 102 to the predetermined degree of depth, carry out water polishing technology and remove slurry and finish polishing.
Cut off the supply of slurry 108 according to water polishing technology of the present invention, replace introducing water 124.Because slurry is thickness too often, can not be by carrier 100 separating wafer 102 from the polishing pad 104 suitably, the speed of platen 106 turntables increases about 1.1 times to about 3 times, promptly is increased to about 22rpm between the 300rpm.This carries out during can removing slurry at the water polishing step separating slurry of above introduction with from wafer.In a preferred embodiment, the speed of platen 106 turntables is increased to more than the 100rpm.Pressure P
RThe power that applies also reduces with the speed increase of platen 106 turntables explained in greater detail below.In addition, carrier 100 can increase rotary speed, further to remove slurry during water polishing technology.In a preferred embodiment, carrier 100 is to approximate the speed of the advancing the speed rotation of turntable, and promptly about 1.1 times to about 3 times, for example about 22rpm is between the 300rpm.
The combined effect of rotary speed that increases and the normal force that reduces makes that wafer 102 is easier to be removed from polishing pad 104.The speed of rotation that increases turntable has been introduced centrifugal force, helps to remove during water polishing residual slurry.In addition, reduce the polishing that downward power can prevent excessive residual during the water polishing step.In a preferred embodiment, pressure P
RBe reduced between about 0 to about 3psi preferred 0psi.
Introduce by slurry feeder 122 as the surfactant of ethanol or isopropyl alcohol etc., further with slurry 118 from polishing pad 104 separate, before the water polishing or during introduce surfactant.
With reference to figure 5, the flow chart of demonstration is the method that discharges wafer according to the present invention from polishing pad.The method that discharges semiconductor wafer from polishing pad comprises releasedly and semiconductor wafer is fixed to carrier, square frame 200.Slurry is incorporated on the polishing pad square frame 202 by slurry feeder.Carrier, and wafer rotation are exerted pressure to wafer simultaneously and are pressed to polishing pad, square frame 204.Polishing pad comprises the hole of transmitting slurry, and when polishing pad moved with respect to wafer, wafer was polished by slurry thus.Except the rotation of carrier, polishing pad also can rotate, with further polished wafer, and square frame 206.In square frame 208, water is incorporated into polishing pad to finish glossing.In square frame 210, increase the rotary speed of wafer and/or polishing pad, remove the part slurry.In square frame 212, be applied to the pressure that wafer is pressed to polishing pad during square frame 210 steps and reduce, prevented further polishing basically to wafer.Discharge wafer from polishing pad, square frame 214 by promoting carrier.Carrier preferably includes vacuum port, and wafer is sealed to carrier.Thus, vacuum pressure or back pressure are applied to the dorsal part of wafer by vacuum port, help carrier to promote wafer thus.
According to the present invention, remove polishing slurries and/or reduce the viscosity of polishing slurries, the release of wafer from the polishing pad during having promoted thus to handle.When unloading according to the present invention or during clean wafers, reduced basically that wafer comes off or wafer has been stayed danger on the polishing pad.Reduce breaking of potential damage and/or wafer like this, increased the productive rate of output and wafer thus.
Now introduced the preferred embodiment of the novel method (for exemplary rather than limited) that promotes semiconductor wafer to discharge, should notice that those skilled in the art can make amendment and is out of shape according to above instruction.Therefore should be appreciated that and to change disclosed specific embodiment of the present invention in the scope and spirit of the present invention that limit by subsidiary claims.The present invention is introduced in requirement according to Patent Law in detail and particularly, expectation and require content by patent protection in subsidiary claims.
Claims (20)
1. one kind discharges the method for semiconductor wafer from polishing pad, may further comprise the steps:
Slurry is applied to polishing pad;
Rotate the carrier that slurry is arranged on it, exert pressure to wafer simultaneously it is pushed up to the polishing pad that slurry is arranged, use the slurry polished wafer thus;
Water is incorporated into polishing pad;
Increase the rotary speed of polishing pad, remove the part slurry;
During the step that increases rotary speed, reduce pressure, to prevent further polishing basically; And
Remove wafer from polishing pad.
2. according to the process of claim 1 wherein that the step that rotating polishing pad is exerted pressure simultaneously comprises with the step of per minute about 20 to about 100 speed of rotation rotating polishing pads that change.
3. according to the process of claim 1 wherein that step that rotating polishing pad is exerted pressure simultaneously is included in the step that applies about 2 to about 8psi pressure between wafer and the polishing pad.
4. according to the process of claim 1 wherein that the step that water is incorporated into polishing pad comprises that cut-out provides the step of slurry to polishing pad.
According to the process of claim 1 wherein increase the rotary speed of polishing pad with the step of removing the part slurry comprise rotary speed with polishing pad increase about 1.1 times to about 3 times step.
6. according to the process of claim 1 wherein that increasing the rotary speed of polishing pad comprises that with the step of removing the part slurry rotary speed with polishing pad is increased to the step that per minute about 22 forwards about 300 commentaries on classics of per minute to.
7. according to the process of claim 1 wherein that the step that reduces pressure comprises pressure is reduced to about 0 step that arrives between about 3psi.
8. according to the process of claim 1 wherein that the step that reduces pressure comprises pressure is reduced to the step that is substantially zero.
9. according to the method for claim 1, also comprise surfactant is incorporated into the step of polishing pad with separating slurry.
10. one kind discharges the method for semiconductor wafer from polishing pad, may further comprise the steps:
Releasedly semiconductor wafer is fixed to carrier;
Slurry is applied to polishing pad;
Rotation carrier and wafer, exerting pressure to wafer simultaneously makes its top to the polishing pad that slurry is arranged, and uses the slurry polished wafer thus;
Rotating polishing pad makes the further polished wafer of slurry;
Water is incorporated into polishing pad finishes polishing;
Increase the rotary speed of wafer and polishing pad, remove the part slurry;
During increasing rotary speed, reduce crystalline substance is pressed to the pressure of polishing pad, to prevent further polishing basically; And
Remove wafer by promoting carrier from polishing pad.
11., wherein rotate the step that carrier and wafer exert pressure simultaneously and comprise with the step of per minute about 20 to about 100 speeds of rotation rotation wafers that change according to the method for claim 10.
12., wherein rotate step that carrier and wafer exert pressure simultaneously and be included in the step that applies about 2 to about 8psi pressure between wafer and the polishing pad according to the method for claim 10.
13. according to the method for claim 10, the step that wherein water is incorporated into polishing pad comprises that cut-out provides the step of slurry to polishing pad.
14. according to the method for claim 10, the rotary speed that wherein increases wafer and polishing pad with the step of removing the part slurry comprise rotary speed with wafer increase about 1.1 times to about 3 times step.
15. according to the method for claim 14, the rotary speed that wherein increases wafer and polishing pad with the step of removing the part slurry comprise rotary speed with polishing pad increase about 1.1 times to about 3 times step.
16. according to the method for claim 10, the rotary speed that wherein increases wafer and polishing pad comprises that with the step of removing the part slurry rotary speed with wafer is increased to the step that per minute about 22 forwards about 300 commentaries on classics of per minute to.
17. according to the method for claim 16, the rotary speed that wherein increases wafer and polishing pad comprises that with the step of removing the part slurry rotary speed with polishing pad is increased to the step that per minute about 22 forwards about 300 commentaries on classics of per minute to.
18. according to the method for claim 10, the step that wherein reduces pressure comprises pressure is reduced to step between about 0 to about 3psi.
19. according to the method for claim 10, the step that wherein reduces pressure comprises pressure is reduced to the step that is substantially zero.
20., also comprise surfactant is incorporated into the step of polishing pad with separating slurry according to the method for claim 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99120766 CN1290030A (en) | 1999-09-28 | 1999-09-28 | Method for promoting releasement of semiconductor sheets |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99120766 CN1290030A (en) | 1999-09-28 | 1999-09-28 | Method for promoting releasement of semiconductor sheets |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1290030A true CN1290030A (en) | 2001-04-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 99120766 Pending CN1290030A (en) | 1999-09-28 | 1999-09-28 | Method for promoting releasement of semiconductor sheets |
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| CN (1) | CN1290030A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102019578B (en) * | 2009-09-22 | 2012-03-14 | 中芯国际集成电路制造(上海)有限公司 | Method for removing wafer from grinding head of chemical mechanical polishing equipment |
| CN108081118A (en) * | 2016-11-22 | 2018-05-29 | 株式会社迪思科 | The processing method of chip |
-
1999
- 1999-09-28 CN CN 99120766 patent/CN1290030A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102019578B (en) * | 2009-09-22 | 2012-03-14 | 中芯国际集成电路制造(上海)有限公司 | Method for removing wafer from grinding head of chemical mechanical polishing equipment |
| CN108081118A (en) * | 2016-11-22 | 2018-05-29 | 株式会社迪思科 | The processing method of chip |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |