CN1287175C - Electrooptical light guide optical switching arrangement capable of increasing extinction ratio - Google Patents
Electrooptical light guide optical switching arrangement capable of increasing extinction ratio Download PDFInfo
- Publication number
- CN1287175C CN1287175C CNB2004100287243A CN200410028724A CN1287175C CN 1287175 C CN1287175 C CN 1287175C CN B2004100287243 A CNB2004100287243 A CN B2004100287243A CN 200410028724 A CN200410028724 A CN 200410028724A CN 1287175 C CN1287175 C CN 1287175C
- Authority
- CN
- China
- Prior art keywords
- phase
- modulator
- beam splitter
- shift arm
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The present invention relates to an electrooptical waveguide optical switch structure capable of increasing extinction ratios. The present invention comprises a pair of input waveguides, a beam splitter, a buncher, a pair of output waveguides, a referential arm, a phase-shift arm, a phase modulator of the phase-shift arm and a region phase modulator, wherein one end of the beam splitter is connected with the input waveguides for dividing a path of light into two paths of light which enters the referential arm and the phase-shift arm, and the output waveguides are connected with one end of the buncher for outputting light from a Mach-Zender interferometer; both ends of the reference arm are respectively connected with the beam splitter and the buncher to form an optical path required for the Mach-Zender interferometer, and both ends of the phase-shift arm are respectively connected with the beam splitter and the buncher to form another optical path required for the Mach-Zender interferometer; the phase modulator of the phase-shift arm is fabricated on the phase-shift arm for changing the phase position of light wave passing through the phase-shift arm by carrier injection, and the region phase modulator is fabricated on the upper surface of the beam splitter for changing the light splitting ratio of the beam splitter by the carrier injection.
Description
Technical field
The invention provides a kind of electro-optical type waveguide optical switch structure, be meant a kind of electro-optical type waveguide optical switch structure that improves extinction ratio especially.
Background technology
Photoswitch is the core devices of key function module Optical Add Drop Multiplexer (OADM) and light cross interconnected (OXC) in the fiber optic communication network.Along with the information society continuous demand growing to message capacity, the transmission bandwidth of fiber optic communication network rapidly increases.Correspondingly, high-speed communication network has also proposed more and more higher requirement to the switching rate of photoswitch.The switching rate of MEMS (micro electro mechanical system) (MEMS) photoswitch is the millisecond magnitude, and thermal-optical type optical waveguide switch switching rate after Optimal Structure Designing can reach tens microseconds, but still can not satisfy the requirement of ultra high-speed optical exchange.The switching rate of electrooptical switching is very high, can reach nanosecond even picosecond, can satisfy the requirement of ultra high-speed optical exchange.But the problem that the electrooptical switching ubiquity exists is that extinction ratio is not high, and this will cause different channels signal cross-talk each other, cause the decline of input sensitivity.Silica-base material Mach-Zehnder interferometer electro-optical type waveguide optical switch for example, its phase shift arm causes additional optical absorption loss because charge carrier injects, and causes phase shift arm and reference arm light power imbalances, further causes the photoswitch extinction ratio to descend.For this reason, the present invention proposes a kind of electro-optical transducer optical switch construction that improves extinction ratio, by the luminous power dynamic equalizing technology, realizes increasing substantially of electro-optical transducer photoswitch extinction ratio.
Summary of the invention
The objective of the invention is to, a kind of electro-optical type waveguide optical switch structure that improves extinction ratio is provided, wherein beam splitter can dynamically change its splitting ratio, thereby reaches the purpose of the extinction ratio of effective raising electrooptical switching.
A kind of electro-optical type waveguide optical switch structure that improves extinction ratio of the present invention, comprising:
A pair of input waveguide, it is in order to light wave is inducted in the Mach-Zehnder interferometer;
One beam splitter, an end of this beam splitter is connected with a pair of input waveguide, in order to one road light is divided into two-way light, and enters into reference arm and phase shift arm respectively;
One bundling device is that two-way light is merged into one road light, and is coupled in a certain the optical waveguide of a pair of output waveguide;
A pair of output waveguide, this a pair of output waveguide is connected with an end of bundling device, and it is in order to light is exported by the Mach-Zehnder interferometer;
One reference arm, the two ends of this reference arm are connected with beam splitter and bundling device respectively, provide to constitute the needed light path of Mach-Zehnder interferometer;
One phase shift arm, the two ends of this phase shift arm are connected with beam splitter and bundling device respectively, provide to constitute needed another light path of Mach-Zehnder interferometer;
One phase shift arm phase-modulator, this phase shift arm phase-modulator is produced on the phase shift arm, is to inject the phase place that changes by the light wave of phase shift arm by charge carrier;
It is characterized in that,
One regional phase-modulator, this zone phase-modulator be produced on beam splitter above, be to inject the splitting ratio that behind the light field multiple-mode interfence, changes beam splitter by charge carrier, this zone phase-modulator is by somely constituting PN junction that the P+ injection region of interlaced arrangement and N+ injection region are formed, and its effect is to inject the PHASE DISTRIBUTION that changes light field by charge carrier.
Wherein beam splitter and bundling device adopt the multi-mode interference coupler structure.
Wherein phase shift arm phase-modulator is the charge carrier injecting structure that utilizes plasma dispersion effect.
Wherein phase shift arm phase-modulator and regional phase-modulator all need injection current, and electric current injects maintenance in time synchronously.
Wherein the splitting ratio of beam splitter is by selecting injection current, zone phase-modulator charge carrier injects that the beam splitter splitting ratio that causes is unbalanced just in time can offset the unbalanced of phase shift arm that the light absorption of phase shift arm phase-modulator causes and reference arm light power, thereby reaches the purpose that improves charge carrier injection type electro-optical transducer switch extinction ratio.
Description of drawings
For further specifying content of the present invention, below in conjunction with drawings and Examples the present invention is done a detailed description, wherein:
Fig. 1 is the synoptic diagram of the electro-optical type waveguide optical switch structure of improved extinction ratio proposed by the invention.
Fig. 2 is the partial enlarged drawing of Fig. 1, demonstrates the structure and the relative tertiary location thereof of multi-mode interference beam splitter 2 and regional phase-modulator 8.
Fig. 3 is the figure as a result of computer simulation.
Fig. 4 is the computer simulation figure as a result that adopts the common electro-optical type waveguide optical switch of dynamic power balancing technique.
Embodiment
See also Fig. 1 and Fig. 2, a kind of electro-optical type waveguide optical switch structure that improves extinction ratio of the present invention, comprising:
A pair of input waveguide 1, it is in order to light wave is inducted in the Mach-Zehnder interferometer;
One beam splitter 2, an end of this beam splitter 2 is connected with a pair of input waveguide 1, in order to one road light is divided into two-way light, and reference arm of chatting after entering into respectively 7 and phase shift arm 3;
One bundling device 5 is that two-way light is merged into one road light, and in a certain the optical waveguide of a pair of output waveguide of chatting after being coupled to 6;
A pair of output waveguide 6, this a pair of output waveguide 6 is connected with an end of bundling device 5, and it is in order to light is exported by the Mach-Zehnder interferometer;
One reference arm 7, the two ends of this reference arm 7 are connected with beam splitter 2 and bundling device 5 respectively, provide to constitute the needed light path of Mach-Zehnder interferometer;
One phase shift arm 3, the two ends of this phase shift arm 3 are connected with beam splitter 2 and bundling device 5 respectively, provide to constitute needed another light path of Mach-Zehnder interferometer;
One phase shift arm phase-modulator 4, this phase shift arm phase-modulator 4 is produced on the phase shift arm 3, is to inject the phase place that changes by the light wave of phase shift arm 3 by charge carrier;
One regional phase-modulator 8, this zone phase-modulator 8 be produced on beam splitter 2 above, be the splitting ratio that inject to change beam splitter 2 by charge carrier.
Wherein phase shift arm phase-modulator 4 is for utilizing the charge carrier injecting structure of plasma dispersion effect.
Wherein phase shift arm phase-modulator 4 and regional phase-modulator 8 all need inject certain electric current, and the electric current injection should keep synchronous in time.
Wherein regional phase-modulator 8 is by somely constituting PN junction that the P+ injection region of interlaced arrangement and N+ injection region are formed.
Wherein by selecting specific injection current, zone phase-modulator 8 charge carriers inject that beam splitter 2 splitting ratios that cause are unbalanced just in time can offset the unbalanced of phase shift arm 3 that 4 light absorption of phase shift arm phase-modulator cause and reference arm 7 luminous powers, thereby reach the purpose that improves charge carrier injection type electro-optical transducer switch extinction ratio.
The electrooptical switching structure that can dynamically change splitting ratio that the present invention proposes sees that Fig. 1 in conjunction with Fig. 2, comprising: multi-mode interference beam splitter 2; Constitute the optical waveguide phase shift arm 3 and the optical waveguide reference arm 7 of Mach-Zehnder interferometer; Multiple-mode interfence bundling device 5; Phase shift arm phase-modulator 4; Regional phase-modulator 8 in the multi-mode interference beam splitter 2.Whole electrooptical switching structure can go up preparation at SOI material (Silicon onInsulator).Multi-mode interference beam splitter 2 is used for input optical signal is divided into two-way, is coupled to the optical waveguide phase shift arm 3 and the optical waveguide reference arm 7 of Mach-Zehnder interferometer respectively, and its static splitting ratio is designed to 50%: 50%.A certain ad-hoc location in the middle of the multimode waveguide of multi-mode interference beam splitter 2, be manufactured with a regional phase-modulator 8, the surface of this zone phase-modulator 8 is divided into the P+ injection region and the N+ injection region (see figure 2) of interlaced arrangement, its effect is to inject the PHASE DISTRIBUTION that changes light field by charge carrier, change the splitting ratio of multi-mode interference beam splitter 2 behind the light field multiple-mode interfence, the luminous power that makes the optical waveguide phase shift arm 3 that is coupled to the Mach-Zehnder interferometer is than the big a certain particular value of the luminous power that is coupled to optical waveguide reference arm 7.Phase shift arm phase-modulator 4 injects the phase place that the plasma dispersion effect cause changes light wave by charge carrier, and with optical waveguide reference arm 7 in do not add phase modulation (PM) light wave interfere, thereby the decision light signal is from which output waveguide output.Multiple-mode interfence bundling device 5 is used for light field is coupled to a certain output optical waveguide.The core of its principle of work is to inject the optical absorption loss that causes with splitting ratio compensating for variations phase shift arm phase-modulator 4 charge carriers of multi-mode interference beam splitter 2 to change.For this reason, at first carry out static test, do not add under the situation of injecting electric current, phase shift arm phase-modulator 4 is injected certain electric current, go out residual light power in the OFF state optical waveguide at the photoswitch measurement of output end at regional phase-modulator 8; Keep the injection current of phase shift arm phase-modulator 4 constant then, and increase the injection current of regional phase-modulator 8 gradually, monitor the residual light power in the photoswitch OFF state optical waveguide simultaneously in real time, when residual light power was reduced to minimum value, the injection current of regional phase-modulator 8 was the The optimal compensation electric current.When photoswitch dynamically uses, as long as to regional phase-modulator 8 and the phase shift arm phase-modulator 4 synchronous modulating currents that inject separately, can realize the dynamic equalization of phase shift arm 3 and reference arm 7 luminous powers, balanced luminous power is to improve the key point of photoswitch extinction ratio.
Improve the effect of extinction ratio for the electro-optical type waveguide optical switch structure that this employing dynamic power balancing technique is described, Fig. 3 has provided the result of computer simulation, this optical field distribution is all to have electric current to inject at regional phase-modulator 8 and phase shift arm phase-modulator 4, and the injection current of regional phase-modulator 8 satisfies and obtains under the situation of The optimal compensation condition.From optical field distribution situation and passage optical power monitoring result as can be seen, adopt the electro-optical type waveguide optical switch of dynamic power balancing technique can improve the extinction ratio of photoswitch effectively, in the present embodiment, the photoswitch extinction ratio reaches-22dB.Fig. 4 is the computer simulation result of the common electro-optical type waveguide optical switch that does not adopt the dynamic power balancing technique that provides for contrast effect, this optical field distribution is to have electric current to inject at phase shift arm phase-modulator 4, but obtain under the situation that regional phase-modulator 8 no currents inject.From optical field distribution situation and passage optical power monitoring result as can be seen, do not adopt the extinction ratio of the common electro-optical type waveguide optical switch of dynamic power balancing technique obviously to reduce, in the present embodiment, the photoswitch extinction ratio is reduced to-17dB.As can be seen from the comparison result, this effect that improves the electro-optical type waveguide optical switch structure of extinction ratio is significantly, thereby has proved the correctness and the validity of design concept of the present invention.
Claims (5)
1, a kind of electro-optical type waveguide optical switch structure that improves extinction ratio, comprising:
A pair of input waveguide, it is in order to light wave is inducted in the Mach-Zehnder interferometer;
One beam splitter, an end of this beam splitter is connected with a pair of input waveguide, in order to one road light is divided into two-way light, and enters into reference arm and phase shift arm respectively;
One bundling device is that two-way light is merged into one road light, and is coupled in a certain the optical waveguide of a pair of output waveguide;
A pair of output waveguide, this a pair of output waveguide is connected with an end of bundling device, and it is in order to light is exported by the Mach-Zehnder interferometer;
One reference arm, the two ends of this reference arm are connected with beam splitter and bundling device respectively, provide to constitute the needed light path of Mach-Zehnder interferometer;
One phase shift arm, the two ends of this phase shift arm are connected with beam splitter and bundling device respectively, provide to constitute needed another light path of Mach-Zehnder interferometer;
One phase shift arm phase-modulator, this phase shift arm phase-modulator is produced on the phase shift arm, is to inject the phase place that changes by the light wave of phase shift arm by charge carrier;
It is characterized in that,
One regional phase-modulator, this zone phase-modulator be produced on beam splitter above, be to inject the splitting ratio that behind the light field multiple-mode interfence, changes beam splitter by charge carrier, this zone phase-modulator is by somely constituting PN junction that the P+ injection region of interlaced arrangement and N+ injection region are formed, and its effect is to inject the PHASE DISTRIBUTION that changes light field by charge carrier.
2, the electro-optical type waveguide optical switch structure that improves extinction ratio as claimed in claim 1 is characterized in that, wherein beam splitter and bundling device adopt the multi-mode interference coupler structure.
3, the electro-optical type waveguide optical switch structure that improves extinction ratio as claimed in claim 1 is characterized in that, wherein phase shift arm phase-modulator is the charge carrier injecting structure that utilizes plasma dispersion effect.
4, the electro-optical type waveguide optical switch structure that improves extinction ratio as claimed in claim 1 is characterized in that wherein phase shift arm phase-modulator and regional phase-modulator all need injection current, and electric current injects maintenance in time synchronously.
5, the electro-optical type waveguide optical switch structure that improves extinction ratio as claimed in claim 1, it is characterized in that, wherein the splitting ratio of beam splitter is by selecting injection current, zone phase-modulator charge carrier injects that the beam splitter splitting ratio that causes is unbalanced just in time can offset the unbalanced of phase shift arm that the light absorption of phase shift arm phase-modulator causes and reference arm light power, thereby reaches the purpose that improves charge carrier injection type electro-optical transducer switch extinction ratio.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100287243A CN1287175C (en) | 2004-03-15 | 2004-03-15 | Electrooptical light guide optical switching arrangement capable of increasing extinction ratio |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100287243A CN1287175C (en) | 2004-03-15 | 2004-03-15 | Electrooptical light guide optical switching arrangement capable of increasing extinction ratio |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1670556A CN1670556A (en) | 2005-09-21 |
| CN1287175C true CN1287175C (en) | 2006-11-29 |
Family
ID=35041886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100287243A Expired - Fee Related CN1287175C (en) | 2004-03-15 | 2004-03-15 | Electrooptical light guide optical switching arrangement capable of increasing extinction ratio |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1287175C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101142315B (en) * | 2005-03-18 | 2010-10-27 | 协和发酵生化株式会社 | Method for preparing dipeptide |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7783138B2 (en) * | 2007-11-16 | 2010-08-24 | Jds Uniphase Corporation | Free-space integrated photodetector with reduced phase tracking error |
| CN103293713B (en) * | 2013-05-10 | 2016-03-09 | 北京工业大学 | A kind of Mach-Zehnder optical switch construction of high-efficiency compact |
| CN103529619B (en) * | 2013-10-21 | 2015-12-23 | 东南大学 | A kind of silicon based photon analog to digital converter based on multi-mode interference coupler |
| CN103529521A (en) * | 2013-10-30 | 2014-01-22 | 中国电子科技集团公司第四十四研究所 | Serially connected optical switch based photon delay structure and numerical-control integrated photon delay device |
| US10372013B2 (en) * | 2016-04-12 | 2019-08-06 | Huawei Technologies Co., Ltd. | Dynamic phase shift compensation for free carrier effect photonic switches |
| CN108627919B (en) * | 2018-05-11 | 2020-02-07 | 浙江大学 | Polarization insensitive silicon-based optical switch |
| CN111490827B (en) * | 2019-04-08 | 2021-10-12 | Nano科技(北京)有限公司 | Monolithic integrated coherent transceiver |
| CN110646884B (en) * | 2019-07-09 | 2021-01-26 | 华中科技大学 | Polarization beam splitter with large manufacturing tolerance and high polarization extinction ratio |
| CN111458948B (en) * | 2020-04-17 | 2021-11-26 | 中国科学院半导体研究所 | Electric light intensity modulator for improving switch extinction ratio and application thereof |
| CN112817091A (en) * | 2021-01-05 | 2021-05-18 | 中国科学院半导体研究所 | Mach-Zehnder interferometer and multichannel coarse wavelength division multiplexer |
| CN113126332B (en) * | 2021-04-29 | 2023-02-03 | 中国科学院上海微***与信息技术研究所 | Mach-Zehnder electro-optic modulator and modulation method |
| CN113253403B (en) * | 2021-06-17 | 2021-10-29 | 苏州浪潮智能科技有限公司 | Optical device, electronic device and programmable photonic integrated circuit |
-
2004
- 2004-03-15 CN CNB2004100287243A patent/CN1287175C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101142315B (en) * | 2005-03-18 | 2010-10-27 | 协和发酵生化株式会社 | Method for preparing dipeptide |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1670556A (en) | 2005-09-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1287175C (en) | Electrooptical light guide optical switching arrangement capable of increasing extinction ratio | |
| Xiong et al. | High-speed two-mode switch for mode-division multiplexing optical networks | |
| Renaud et al. | Semiconductor optical space switches | |
| CN107065072B (en) | Novel optical modulator based on multimode waveguide | |
| CN102165346A (en) | Method and apparatus for high speed silicon optical modulation using PN diode | |
| Ding et al. | Hybrid MZI-SOA InGaAs/InP photonic integrated switches | |
| Velthaus et al. | High performance InP-based Mach-Zehnder modulators for 10 to 100 Gb/s optical fiber transmission systems | |
| Katopodis et al. | Polymer enabled 100 Gbaud connectivity for datacom applications | |
| Krahenbuhl et al. | Low-loss polarization-insensitive InP-InGaAsP optical space switches for fiber optical communication | |
| US6801676B1 (en) | Method and apparatus for phase shifting an optical beam in an optical device with a buffer plug | |
| CN202771038U (en) | M*N multichannel MEMS optical switch | |
| Kim et al. | First demonstration of SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect | |
| Chen | Silicon photonic integrated circuits for WDM technology and optical switch | |
| Lee et al. | Broadband silicon photonic switch integrated with CMOS drive electronics | |
| Wang et al. | Integrated high-repetition-rate optical sampling chip exploiting wavelength and mode multiplexing | |
| Hu et al. | A novel MZ modulator based on photonic crystal and nanowire waveguide | |
| Liu et al. | High-speed silicon modulator for future VLSI interconnect | |
| Tsuzuki et al. | 10-Gbit/s, 100-km SMF transmission using an InP-based nin Mach-Zehnder modulator with a driving voltage of 1.0 Vpp | |
| WO2019235392A1 (en) | Optical switch device | |
| Jain et al. | Optimization of 2x2 Mach-Zehnder interferometer electro-optic switch | |
| Hu et al. | An integrated device for electro-optic modulation and dense wavelength division multiplexing based on photonic crystals | |
| Cheng et al. | Modular hybrid dilated Mach-Zehnder switch with integrated SOAs for large port count switches | |
| Suzuki et al. | O-band strictly non-blocking 8× 8 silicon-photonics switch | |
| Liu et al. | 200 Gbps photonic integrated chip on silicon platform | |
| Hu et al. | 80 Gbit/s NRZ lateral PIN germanium photodetector with 4-directional light input silicon waveguides |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |