CN1284240C - High speed high voltage power integrated device with extending schottky junction - Google Patents
High speed high voltage power integrated device with extending schottky junction Download PDFInfo
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- CN1284240C CN1284240C CN 02124128 CN02124128A CN1284240C CN 1284240 C CN1284240 C CN 1284240C CN 02124128 CN02124128 CN 02124128 CN 02124128 A CN02124128 A CN 02124128A CN 1284240 C CN1284240 C CN 1284240C
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- schottky junction
- triode
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Abstract
The present invention relates to a high-speed high-voltage power integrated device with an extending schottky junction in the field of electricity electronic. A semiconductor triode and a semiconductor diode which is in anti-parallel connection with the semiconductor triode are integrated on the same chip. The present invention is characterized in that a structure of the extending schottky junction for enhancing the switching speed of the diode is arranged between the diode and the triode. Adopting the extending schottky junction which is formed between a high-resistance n-substrate and the part of a diode aluminium electrode extending the external side of the diode can decrease the concentration of injected minority carriers, and therefore, the switching speed is enhanced. The present invention obviously enhances the switching speed of the integrated diode of the power integrated device, and has the advantages of simple manufacturing technology and low cost.
Description
The application is dividing an application of high-speed high-voltage power IC device, and the applying date of original application is on July 27th, 1999, and application number is 99111014.5, and invention and created name is a high-speed high-voltage power IC device.
Technical field
The present invention relates to a kind of high-speed high-voltage power IC device that contains high-voltage power bipolar transistor and fly-wheel diode antiparallel with it.
Background technology
The field of power electronics that is developing rapidly at present, to reduce manufacturing cost in order reaching, to improve reliability and reduce volume, people have those regular collocation relation as much as possible in circuit discrete device manufactures power IC device, and the power IC device that contains high-voltage power bipolar transistor and diode antiparallel with it of the present invention promptly belongs to this type of.This class device need be considered following problem during fabrication: as shown in Figure 1, on the chip of high voltage power device, " knot terminal processes district " by an enclosed shape that does not flow electric current around effective area (area that refers to conductance current) is surrounded, use obtain high withstand voltage.Wherein, knot terminal processes technology has various technology such as field limiting ring, field plate, table top.As an example, Fig. 1 shows a tube core profile that adopts the high-voltage diode of field limiting ring technology.If the SiO in knot terminal processes district is close in the wiring of the metallization among the figure (being generally the aluminium film that evaporation is got on)
2Passing by in the surface, then can cause this district's surface potential variation and cause puncture voltage to reduce.Therefore, in discrete device, the lead of pressure welding is away from SiO
2Film swings through the air, and does not influence puncture voltage.But two devices must connect with the metallization wiring in integrated device, and it inevitably will be through the SiO of knot termination environment
2The surface must cause that puncture voltage descends.So high voltage power device integrated can not adopt at all low-voltage device integrated in the used method that each components and parts is linked up with the wiring of aluminum metal film simply, and must employing be different from the device architecture of discrete device fully, make its wiring of avoiding metallizing cross over the problem of knot terminal.U.S. motorola inc and European SGS-Thomson company almost release the high-voltage power bipolar transistor of the first generation and the integrated device of diode antiparallel with it (MOTOROLA Bipolar PowerTransistor Data, nineteen ninety-five version [MOTOROLA bipolar power transistor databook] simultaneously about nineteen ninety-five; SGS-THOMSON MICROELECTRONIC[SGS-THOMSON microelectronics] data, print and distribute in December, 1994).The used technical scheme of two companies is identical, and its structure is seen Fig. 2.The structure of Fig. 2 is an enclosed shape, so medianly zygomorphic each zone of seeing on the section is actually same zone.See by Fig. 2, diode region 2 in this integrated device is positioned at the center of triode region 1, both shared knot terminal processes districts, the disadvantage of tying the termination environment is crossed in the metallization wiring of having avoided dexterously connecting two devices, the diode 2 that Fig. 3 shows this prior art specially to be adopted, the structure between the triode 1, i.e. structure between chain-dotted line aa and the bb among Fig. 2.
But above-mentioned prior art has only solved high pressure resistant problem and has kept low on-state pressure drop basically, and it fails to provide effective way to the other problem that solves except that puncture voltage.At present, the typical switching speed that reached of this class device is t recovery time of diode in the world
Rr=2000ns, triode turn-off time t
Off=2000ns.Because diode recovery speed is slow, triode switch time while is also long partially, so device power loss is too big in frequency applications, temperature rise is too high, is not suitable for the universal use more than tens kilo hertzs, and therefore, it is few that this product is released the back user.In addition, also once the someone attempts to be used in diode area part on the chip and mixes the way of strong complex centre platinum and solve the slow problem of integrated diode resume speed (S.Coffa et al., " Power Bipolar Transistors with a Fast Recovery Diode ", IEEE Transactions on Electron Devices, Vol.43, NO.5, PP.836-839 (1996) [S.Coffa etc., " power bipolar transistor that has a fast recovery diode ", IEEETransactions on Electron Devices.Vol.43, NO.5, PP.836-839 (1996)]), adopt but this method is unmanned so far aborning.This is because when having used noble metal platinum on the one hand, additional process such as platinum ion injection, long-time platinum drive in, platinum etching also outside the common plane technical process, have been increased, this all makes manufacturing cost improve, offset the major advantage that integrated device can reduce cost, run counter to integrated original intention; Be because manufacturing system has been polluted in the use of strong complex centre platinum on the other hand, the quality of other products of making on the same production line is had significant impact.
Summary of the invention
Purpose of the present invention just is to overcome the defective of above-mentioned prior art, provides a kind of low cost of manufacture, manufacture craft simple, can significantly improve the new construction of the power IC device of integrated diode switching speed.
Designer of the present invention finds, in existing structure used diode structure and the switching speed of audion own slow, after being integrated in both on the same chip, the mutual flow field problem of charge carrier among both in chip is even more important in fact, this factor is only the first cause that causes switching speed slow, therefore must at first manage to address this problem.Research by us is clear and definite: diode and triode influence to each other that the diffusion of the charge carrier by Si sheet inside causes are slowed down switching speed, and especially the existence of the triode that area is very big makes the speed of diode significantly slack-off (influence of the diode pair triode switch speed that area is very little is very little usually).The physical interpretation of this problem is: injected holes will be diffused into triode region during diode current flow.When diode turn-offs, a large amount of holes of triode region accumulation will be flowed out the E utmost point of integrated device by triode or diode.It should be noted that, the hole of triode region flows to the E utmost point and laterally flows to diode by the high resistant N type district between triode and the diode by the triode emitter region all is that form with the minority carrier diffuse flow realizes, and the few sub-diffuse flow in heavily doped triode emitter region can not be big, simultaneously the few sub-horizontal proliferation stream of the triode N type collector region that lateral dimension is very big also can not very big (concentration gradient be little), therefore, diode is stored in triode region when turn-offing hole is difficult to flow out, and this prolongs the diode reverse recovery time greatly.
A kind of high-speed high-voltage power IC device of the present invention with extending schottky junction, it includes triode 1 and is positioned at diode 2 on the same block semiconductor chip, wherein diode 2 is positioned at the centre of triode 1, or the outside of triode 1, it is characterized in that: design has the extending schottky junction 3 that is used for improving diode switch speed between diode 2 and triode 1.
Among the present invention, the structure of described extending schottky junction 3 is that the aluminium electrode of diode 2 is extended to diode 2 outside certain widths, makes extended part and high resistant n
-Form extending schottky junction 3 between substrate, see shown in the accompanying drawing 4.The material of described aluminium electrode can be a fine aluminium, also can be the aluminium that contains a small amount of other element impurity, and described other element impurity are silicon or copper.Extending schottky junction 3 among the present invention can reduce conduction period to be measured from the hole that diode flows into triode region, thereby reduces the hole total amount of triode region accumulation, when turn-offing, just can be extracted out with the short period, so the turn-off time is short, switching speed is fast.
The present invention is owing to adopt the method that changes the integrated device structure, not only solved the slow-footed problem of diode recovery speed and triode switch, and need not introduce additional processing technology beyond the common plane technology, such as the carrier lifetime control technology of various complexity, thereby manufacture craft is simple, cost is low.
Below in conjunction with drawings and Examples the present invention is described in further details.
Description of drawings
Accompanying drawing 1: high-voltage diode knot terminal processes district schematic diagram;
Accompanying drawing 2: the cross-section structure of existing high-speed high-voltage power IC device;
Accompanying drawing 3: structural representation between diode, the triode in the existing structure;
Accompanying drawing 4: the structural representation (corresponding) of the extending schottky junction in the structure of the present invention between diode and the triode with the position in the existing structure shown in the accompanying drawing 3;
Accompanying drawing 5 (a): the domain structure schematic diagram of using the power IC device of extending schottky junction of the present invention;
Accompanying drawing 5 (b): the partial enlarged drawing of accompanying drawing 5 (a);
Accompanying drawing 5 (c): along the profile of CC ' in the accompanying drawing 5 (b);
Attached number description:
1, triode region;
2, diode region;
3, extending schottky junction district;
4, knot termination environment;
5, aluminium (also can be the aluminium that contains small amount of impurities, for example contain silicon or copper) electrode;
6, lead;
7, silicon dioxide;
8, triode base lead-in wire contact hole;
9, triode emitter region lead-in wire contact hole;
10, diode lead contact hole.
Embodiment
Embodiment and explanation:
The aluminium electrode of diode 2 is extended to pin diode outside certain width, see Fig. 4 and Fig. 5 (c), form schottky junction 3 between extended part and high resistant n-substrate.Because the schottky junction injected hole is few, between diode and the triode and the hole concentration of triode region will reduce, the hole was drawn out of the time and also can shortens when diode turn-offed.
Specific embodiment:
Above technical scheme can cooperate different triodes and diode structure to use, and for example, can respectively choose any one kind of them from following three groups of structures and combine:
GAT (H.Kondo et.al. wherein, " A New Bipolar Transistor-GAT ", IEEE Trans.Electron Devices, Vol.ED-27, No.2, pp.373-379,1980.) [H.Kondo etc., " a kind of new bipolar transistor-gate associated transistor GAT ", IEEE Trans.Electron Devices, Vol.ED-27, No.2, pp.373-379,1980.] and MPS (B.Jayant Baliga, " Analysisof a High-Voltage Merged P-i-n/Schottky (MPS) Rectifier ", IEEEElectron Device Letters, Vol.EDL-8, No.9, pp.407-409,1987.) [B.Jayant Baliga, " high pressure Schottky/PIN merges the diode analysis ", IEEE Electron DeviceLetters, Vol.EDL-8, No.9, pp.407-409,1987.] be respectively to have bipolar power transistor and a diode that improves structure, they all with the common process compatibility of making BJT and PIN.
Choosing audion below is common bipolar power transistor (BJT), and diode structure is common PIN diode, provides on this basis to use the extending schottky junction example of structure.
Fig. 5 (a) is the surface plate figure schematic diagram when using the extending schottky junction structure.Fig. 5 (b) is the detailed structure schematic diagram of chain-dotted line institute region among the figure (a), and Fig. 5 (c) is the profile along CC ' line among Fig. 5 (b).Vacate one in the inside of triode 1, make a diode 2.The 8th, triode base lead-in wire contact hole, the 9th, triode emitter region lead-in wire contact hole, the 10th, the lead-in wire contact hole of diode.Among the figure, the lead-in wire contact hole of diode is greater than the p type island region of diode, and after having covered the aluminum metal electrode, the zone that has more will form the schottky junction between aluminium and n-silicon.
Table 1 is to use above-mentioned concrete scheme of the present invention high-speed high-voltage power IC device that obtains and the comparison that has similar device level now.
The integrated device level that table 1, the present invention reach and with the comparison of existing similar device level
The invention has been finished purpose of the present invention through the enforcement of such scheme.
Claims (4)
1, a kind of high-speed high-voltage power IC device with extending schottky junction, include triode (1) and be positioned at diode (2) on the same block semiconductor chip, wherein diode (2) is positioned at the centre of triode (1), or the outside of triode (1), it is characterized in that: design has the extending schottky junction (3) that is used for improving diode switch speed between diode (2) and triode (1).
2, the high-speed high-voltage power IC device with extending schottky junction according to claim 1 is characterized in that: above-mentioned extending schottky junction (3) is that the aluminium electrode of diode (2) is extended to diode outside certain width, extended part and high resistant n
-Form extending schottky junction (3) between substrate.
3, the high-speed high-voltage power IC device with extending schottky junction according to claim 2 is characterized in that: the material of above-mentioned aluminium electrode is fine aluminium or the aluminium that contains a small amount of other element impurity.
4, the high-speed high-voltage power IC device with extending schottky junction according to claim 3 is characterized in that above-mentioned other element is silicon or copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02124128 CN1284240C (en) | 1999-07-27 | 1999-07-27 | High speed high voltage power integrated device with extending schottky junction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02124128 CN1284240C (en) | 1999-07-27 | 1999-07-27 | High speed high voltage power integrated device with extending schottky junction |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN99111014A Division CN1110098C (en) | 1999-07-27 | 1999-07-27 | High-speed high-voltage power IC device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1492509A CN1492509A (en) | 2004-04-28 |
| CN1284240C true CN1284240C (en) | 2006-11-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02124128 Expired - Fee Related CN1284240C (en) | 1999-07-27 | 1999-07-27 | High speed high voltage power integrated device with extending schottky junction |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7696598B2 (en) * | 2005-12-27 | 2010-04-13 | Qspeed Semiconductor Inc. | Ultrafast recovery diode |
| US8829614B2 (en) * | 2009-08-31 | 2014-09-09 | Alpha And Omega Semiconductor Incorporated | Integrated Schottky diode in high voltage semiconductor device |
| US8634218B2 (en) | 2009-10-06 | 2014-01-21 | Power Integrations, Inc. | Monolithic AC/DC converter for generating DC supply voltage |
| US8310845B2 (en) | 2010-02-10 | 2012-11-13 | Power Integrations, Inc. | Power supply circuit with a control terminal for different functional modes of operation |
| US9455621B2 (en) | 2013-08-28 | 2016-09-27 | Power Integrations, Inc. | Controller IC with zero-crossing detector and capacitor discharge switching element |
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1999
- 1999-07-27 CN CN 02124128 patent/CN1284240C/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN1492509A (en) | 2004-04-28 |
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