CN1279692C - High frequency amplifier and amplifying component - Google Patents
High frequency amplifier and amplifying component Download PDFInfo
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- CN1279692C CN1279692C CNB991270940A CN99127094A CN1279692C CN 1279692 C CN1279692 C CN 1279692C CN B991270940 A CNB991270940 A CN B991270940A CN 99127094 A CN99127094 A CN 99127094A CN 1279692 C CN1279692 C CN 1279692C
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
- H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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Abstract
The amplification element is configured by amplifying a multicarrier signal by combining plural carrier waves modulated independently. There is disclosed a high-frequency amplifier for amplifying multicarrier signals generated by combining plural carrier waves modulated independently. The amplifier performs a predetermined filtering processing at its output end. An amplification element is also disclosed which is integrated with a circuit for suppressing main components of nonlinear distortions, thus forming an integrated circuit. In electronic appliances, equipments, or systems to which the invention is applied, achievement of reduction in price and size, improvement in reliability, and maintenance and operation being done more efficiently at reduced costs can be accomplished.
Description
The present invention relates to a kind of high-frequency amplifier, be used to amplify the multi-carrier signal that carrier wave produced by a plurality of separate modulation of combination.
CDMA (code division multiple access connection) system has confidentiality and anti-interference inherently, and is the multiple access system that can effectively utilize radio frequency.Therefore, cdma system is applicable to various communication systems.
And, have high response and high-precision transmitting power control technology owing to set up, so that can solve nearly problem far away, so cdma system is applied to mobile communication system just energetically in recent years.
As shown in figure 13, the radiating portion of wireless base station of using the mobile communication system of above-mentioned cdma system comprises a plurality of high-frequency amplifier 101-1 to 101-N, with a combiner 102, high-frequency amplifier 101-1 to 101-N amplifies the power of N RF signal, this N RF signal has different carrier frequencies respectively, and arrange the frequency of distributing them according to given Frequency Distribution and district's band, combiner 102 is distinguished given RF signal by combination by the output of high-frequency amplifier 101-1 to 101-N, produces the multi-carrier signal of supplying with antenna system.
For the sake of simplicity, the several N that suppose above-mentioned RF signal now are 2.The carrier frequency of these RF signals is used f respectively
1And f
2Expression.
As the radiating portion of above-mentioned layout in, high-frequency amplifier 101-1 and 101-2 amplify the electrical power of the first and second RF signals respectively, these two RF signals comprise the frequency f in the occupied frequency band
1And f
2
Because these high-frequency amplifiers 101-1 and 101-2 amplify the first and second RF signals respectively, even the characteristic of the amplifier element that is provided with comprises the inelastic region, can not produce noise owing to the cross modulation (phase inter-modulation) of these RF signals in high-frequency amplifier 101-1 and 101-2 yet.And such noise will be called cross modulation distortion hereinafter simply.
In above-mentioned prior art, along with several N increases of the carrier frequency of distributing to the wireless base station, several N of amplifier 101-1 to 101-N increase, and therefore increase the size of hardware.
About the layout of the hardware of wireless base station, requirement can be adapted to the maximum Nmax of the carrier number that can distribute usually.
Yet, about the wireless base station,,, desired floor space and volume and power consumption for example are installed to setting up the various restrictions of office along with the size increase of hardware, may become comparatively strict, and reliability may degenerate.
Degenerating of the increase of restriction and reliability can be by making up a combiner and the public amplifier of list is alleviated, and combiner is used to make up N RF signal, and singly public amplifier is used to amplify the multi-carrier signal that output obtained from combiner.Yet public amplifier requires to have sufficiently high linearity, wishes under the boundary level so that the level of the cross modulation distortion of N RF signal is suppressed at.
And, along with the several N of above-mentioned RF signal increase and the area increase of the formed radio zone in wireless base station, require the dynamic range of the public amplifier broad that becomes.
Therefore, realize although public amplifier is technical, because expense and other restrictions, so seldom drop into actual the use.
Shown in (4) among Figure 14, above-mentioned cross modulation distortion is usually with the frequency f of N carrier wave distributing to the wireless base station
1To f
NThe frequency component that adds and subtract between (among Figure 14 (1) and (2)) and equal frequency axis upper frequency f
1To f
NBetween the frequency translation modulation distortion (among Figure 14 (3)) of difference on the frequency Δ f produce, distortion hereto is called basic modulation product hereinafter.
For the sake of simplicity, suppose that hereinafter difference on the frequency Δ f is the difference on the frequency between the adjacent carrier frequencies, is given as:
Δf＝f
k+1-f
k
Wherein k is arbitrary integer (k=1 is to (N-1)).
Yet the impedance of public amplifier internal interface ground wire or inductance generally increase with the frequency Δ f of above-mentioned basic modulation product.Similarly, the level of basic modulation product increases.
Just, along with the difference on the frequency Δ f between the frequency that is included in N RF signal in the multi-carrier signal to be amplified increases, the level of the cross modulation distortion of generation increases.
Therefore, be necessary to make the public amplifier of above-mentioned routine to constitute, to allow the level of cross modulation distortion by having enough low-impedance circuit.
In the mobile communication system of using the broadband cdma system, the frequency △ f of basic modulation product generally is assumed to the big value greater than 10MHz to tens MHz.
Therefore, be difficult to use the public amplifier that comprises low impedance circuit as above-mentioned, unless following condition is set up:
(1) under other restrictions that comprise operating cost, allows the increase power consumption.
(2) might handle the mechanical dimension of pair amplifier element and other elements and the technical limitations of thermal design.
An object of the present invention is to provide a kind of high-frequency amplifier, it comprises hardware on a small scale, itself is applicable to various Frequency Distribution neatly yet can make.
Another object of the present invention provides a kind of high-frequency amplifier, and it comprises the small scale in circuitry that can carry out high efficiency and high SN ratio.
Another purpose of the present invention provides a kind of high-frequency amplifier, even there is the carrier wave of a large amount of numbers to be used to produce multi-carrier signal to be amplified, even the frequency of these carrier waves in every way or variation pattern distribute, it also can stably keep the SN ratio.
Another purpose of the present invention provides a kind of high-frequency amplifier that is applied to electronic apparatus, equipment or system, and it can make these electronic apparatuss, equipment or system reduce price and size, and makes them improve reliability.Also be provided for the high-frequency amplifier of electronic apparatus etc., it can also allow maintenance and operation more effective, and finishes with the expense that reduces.
Above-mentioned purpose is realized by a kind of high-frequency amplifier, this high-frequency amplifier comprises: an amplifying device, be used to amplify the multi-carrier signal that carrier wave produced by a plurality of separate modulation of combination, with a filter, be connected with the output of described amplifying device, it is characterized in that described filter has: a rejection band is positioned within the frequency band range that described multi-carrier signal occupies; Such transfer characteristic makes the level of noise is suppressed under the predetermined upper limit that described noise is the modulation product generation that equals frequency axis upper frequency difference Δ f with modulation product between the multi-carrier signal and frequency, as the composition product between the described carrier wave; With a passband, in its scope, comprise described difference on the frequency Δ f.
In this high-frequency amplifier, above-mentioned noise mainly comprises because the non-linear nonlinear distortion that produces of amplifying device.
Therefore, as long as in filter, set up filtering characteristic in advance, make it be adapted to the characteristic of amplifying device and the Frequency Distribution of hope, then in this high-frequency amplifier, comprise that the small scale in circuitry of above-mentioned amplifying device and filter can be realized high efficiency and high SN ratio.
Above-mentioned purpose also realizes that by filter this filter has a passband, and this passband has a frequency band, and this frequency band is less than or equal to and the frequency that equates for the described difference on the frequency Δ f of its distribution.
In this high-frequency amplifier, even there is the carrier wave of a large amount of numbers to be used to produce multi-carrier signal to be amplified, even or the frequency of these carrier waves distribute with difference or variation pattern, also make SN than stably keeping, and do not change the feature of filter.
Above-mentioned purpose also realizes that by filter this filter has a passband, and it has the frequency band of the second harmonic of the described multi-carrier signal that wherein distributes, or a upper-passband, and it is included as the described frequency band of its distribution.
Therefore, by the non-linear harmonic component that produces of amplifying device and modulation product with Δ f frequency together, be subjected to the inhibition of filter, and improved the SN ratio.
Above-mentioned purpose is realized by a kind of high-frequency amplifier, comprising: an amplifying device is used to amplify the multi-carrier signal that carrier wave produced by a plurality of separate modulation of combination; With a filter, be connected with the output of described amplifying device, have: a rejection band, be positioned within the frequency band range that described multi-carrier signal occupies, a passband has a frequency band, the second harmonic of the described multi-carrier signal that wherein distributes, or a upper-passband, be included as the described frequency band of its distribution.
As long as in filter, set up filtering characteristic in advance, make it be adapted to the characteristic of amplifying device and the Frequency Distribution of hope, then in this high-frequency amplifier, comprise that the small scale in circuitry of above-mentioned amplifying device and filter can be realized high efficiency and high SN ratio.
Above-mentioned purpose also by described amplifying device with and the load that is connected of the outlet side of described amplifying device between, the filter that is connected in parallel is realized.
As in the high-frequency amplifier of above-mentioned layout, make the I/O impedance of filter be given as a value, it is suitable for the output impedance of amplifying device and the impedance of load, as long as these impedances have given value.
Therefore, the filtering characteristic of filter can be arranged on and wish precision as the transfer function that is suitable for such impedance.
And, above-mentioned purpose is realized by a kind of amplifier element, this amplifier element is used to amplify the multi-carrier signal that carrier wave produced by a plurality of separate modulation of combination, and it is integrated to form an integrated circuit with filter, it is characterized in that, described filter has: an output of amplifier element is connected with described filter; Such transfer characteristic makes the level of noise is suppressed under the high limit of tolerance that described noise produces with the modulation product that modulation product between the multi-carrier signal and frequency equal frequency axis upper frequency difference Δ f, as the composition product between the described carrier wave; With a passband, in its scope, comprise described difference on the frequency Δ f.Above-mentioned amplifier element realizes constituting the enlarging function of the amplifying device of above-mentioned high-frequency amplifier on one's own initiative, and it and to form the filter of high-frequency amplifier integrated, form an integrated circuit like this.
Above-mentioned purpose is also realized by a kind of amplifier element, this amplifier element is used to amplify the multi-carrier signal that carrier wave produced by a plurality of separate modulation of combination, and it is integrated to form an integrated circuit with filter, it is characterized in that, described filter has: an output of amplifier element is connected with described filter; With a passband, comprise a frequency band, the second harmonic of the described multi-carrier signal that wherein distributes, or a upper-passband are included as the described frequency band of its distribution.
In such amplifier element that constitutes, by integrated, then be used in the line length shortening of filter with the output of termination amplifying device with amplifier element as above-mentioned.
Therefore, compare with the situation that filter is arranged in the outside, the impedance of this line is less.
Even there is the carrier wave of a large amount of numbers to be used to produce multi-carrier signal to be amplified, even or the difference on the frequency on the frequency axis of these carrier waves big, also can realize high SN ratio.
Above-mentioned purpose is also realized by a kind of amplifier element, this amplifier element is used to amplify the multi-carrier signal that carrier wave produced by a plurality of separate modulation of combination, and it is integrated to form an integrated circuit with filter, it is characterized in that, described filter has: an output of amplifier element is connected with described filter; With a passband, comprise a frequency band, the second harmonic of the described multi-carrier signal that wherein distributes, or a upper-passband are included as the described frequency band of its distribution.
Other purposes of the present invention and characteristics will clearly show in based on the description of the drawings following.
Fig. 1 is the block diagram of explanation according to the principle of high-frequency amplifier of the present invention;
Fig. 2 is the block diagram of explanation according to the principle of amplifier element of the present invention;
Fig. 3 is the circuit diagram of explanation according to first embodiment of high-frequency amplifier of the present invention;
Fig. 4 is the assembly drawing according to first embodiment of high-frequency amplifier of the present invention;
Fig. 5 is the graphic extension of explanation according to the operation of high-frequency amplifier of the present invention;
Fig. 6 is the circuit diagram that the another kind of expression first embodiment is arranged;
Fig. 7 is the schematic diagram of the amplitude response of the expression filter that replaces parallel resonator;
Fig. 8 is the circuit diagram according to second embodiment of high-frequency amplifier of the present invention;
Fig. 9 is the assembly drawing according to second embodiment of high-frequency amplifier of the present invention.
Figure 10 is the schematic diagram of the amplitude response of the expression filter that replaces series resonator;
Figure 11 is the plane graph according to first embodiment of amplifier element of the present invention;
Figure 12 is the plane graph according to second embodiment of amplifier element of the present invention;
Figure 13 is the power amplifier schematic diagram partly that is applicable to the emission system of cdma system; And
Figure 14 is the Frequency Distribution of explanation multi-carrier signal and the schematic diagram of the distribution of the cross modulation distortion that can produce.
At first narrate principle according to high-frequency amplifier of the present invention and amplifier element.Fig. 1 is the block diagram of explanation according to the principle of high-frequency amplifier of the present invention.
Amplifier shown in Figure 1 comprises amplifying device 11 and filter 12 and 21, amplifying device 11 is supplied with hereinafter described multi-carrier signal, and filter 12 is connected with the output of amplifying device 11 with 21.
Principle according to first high-frequency amplifier of the present invention is as follows.The multi-carrier signal that carrier wave produced that amplifying device 11 amplifies by a plurality of separate modulation of combination.Filter 12 is connected with the output of described amplifying device, it has a rejection band that is positioned within the frequency band range that described multi-carrier signal occupies, such transfer characteristic is suppressed at noise level under the predetermined upper limit, described noise is with the modulation product between the multi-carrier signal, the modulation product that equals frequency axis upper frequency difference Δ f with frequency produces, as the composition product between the described carrier wave and one difference on the frequency Δ f is included in passband in its scope.
Principle according to second high-frequency amplifier of the present invention is as follows.The multi-carrier signal that carrier wave produced that amplifier element 11 amplifies by a plurality of separate modulation of combination.Filter element 12 is connected with the output of described amplifying device, it has a rejection band that is positioned within the frequency band range that described multi-carrier signal occupies, such transfer characteristic is suppressed at noise level under the predetermined upper limit, described noise is with the modulation product between the multi-carrier signal, the modulation product that equals frequency axis upper frequency difference Δ f with frequency produces, as the composition product between the described carrier wave and one difference on the frequency Δ f is included in passband in its scope.
Above-mentioned noise mainly comprises because the non-linear nonlinear distortion that produces of amplifying device 11.
Therefore, as long as in filter 12, set up filtering characteristic in advance, make its characteristic that adapts to amplifying device 11 and the Frequency Distribution of hope, then in this high-frequency amplifier, comprise that the small scale in circuitry of above-mentioned amplifying device 11 and filter 12 can be realized high efficiency and high SN ratio.
Principle according to the 3rd high-frequency amplifier of the present invention is as follows.
Filter 12 has a passband that is in the frequency under the frequency that equals difference on the frequency Δ f.
Therefore, even there is the carrier wave of a large amount of numbers to be used to produce multi-carrier signal to be amplified, even or the frequency of these carrier waves distribute with difference or variation pattern, also make SN than stably keeping, and do not change the feature of filter 12.
Principle according to the 4th high-frequency amplifier of the present invention is as follows.
Filter 12 has the frequency band of the second harmonic of the described multi-carrier signal that wherein distributes, or a upper-passband that is included as the described frequency band of its distribution.
Particularly,, be subjected to the inhibition of filter 12, improved the SN ratio equally because the non-linear harmonic component that produces of amplifying device 11 and modulation product with Δ f frequency are together.
Principle according to the 5th high-frequency amplifier of the present invention is as follows.
The multi-carrier signal that carrier wave produced that amplifying device 11 amplifies by a plurality of separate modulation of combination.Filter 21 is connected with the output of amplifying device 11, it has a rejection band, be positioned within the frequency band range that described multi-carrier signal occupies, with a passband, frequency band with second harmonic of the described multi-carrier signal that wherein distributes, or a upper-passband, be included as the described frequency band of its distribution.
Principle according to the 6th high-frequency amplifier of the present invention is as follows.
The multi-carrier signal that carrier wave produced that amplifier element 11 amplifies by a plurality of separate modulation of combination.Filter 21 is connected with the output of amplifying device 11, it has a rejection band, be positioned within the frequency band range that described multi-carrier signal occupies, with a passband, frequency band with second harmonic of the described multi-carrier signal that wherein distributes, or a upper-passband, be included as the described frequency band of its distribution.
Therefore, as long as in filter 12, set up filtering characteristic in advance, make its characteristic that adapts to amplifying device 11 and the Frequency Distribution of hope, then in this high-frequency amplifier, comprise that the small scale in circuitry of above-mentioned amplifying device 11 and filter 12 can be realized high efficiency and high SN ratio.
Principle according to the 7th high-frequency amplifier of the present invention is as follows.
Filter 12 and 21 be connected in parallel amplifying device 11 with and the load that is connected of the outlet side of amplifying device 11 between.
Just,, make it be suitable for the output impedance of amplifying device 11 and the impedance of load, as long as these impedances have given value to the I/O impedance set-point of filter 12 and 21.
Therefore, filter 12 and 21 filtering characteristic can be arranged on and wish precision as the transfer function that is suitable for such impedance.
Fig. 2 is the block diagram of explanation according to the principle of amplifier element of the present invention.
This amplifier element constitutes to form an integrated circuit by integrated with filter 12 and 21.
Principle according to amplifier element of the present invention is as follows.
This amplifier element is by amplifying the multi-carrier signal that carrier wave produced by a plurality of separate modulation of combination, and and above-mentioned filter 12 and 21 in any one is integrated, constitute to form an integrated circuit.
Particularly because filter 12 or 21 is integrated as mentioned above, so with the situation of not integrated filter 12 or 21 relatively, guide to according to the length of the line of the terminal of the output of amplifier element of the present invention shorter.
Therefore, compare with the situation that filter 12 or 21 is arranged in the outside, the impedance of this line is less.
And, even there is the carrier wave of a large amount of numbers to be used to produce multi-carrier signal to be amplified, even or big along the difference on the frequency on the frequency axis of these carrier waves, also can realize high SN ratio.
Hereinafter with reference to the accompanying drawings, at length narrate embodiments of the invention.
Fig. 3 represents first embodiment according to high-frequency amplifier of the present invention.
In the figure, input is connected with the grid of FET 42 by capacitor 41, and FET 42 is amplifying device and amplifier element.Grid by 43 couples of FET 42 of inductor applies a given bias voltage Vgs.The source ground of FET 42.The drain electrode of FET 42 is connected with output by capacitor 44.Drain electrode by 47 couples of FET 42 of parallel resonator applies a given supply voltage Vds, and parallel resonator 47 is filters, and comprises the parallel connection combination of inductor 45 and capacitor 46.Be used for supplying with separately the power line 48-1 of bias voltage Vgs and supply voltage Vds and 48-2 respectively by capacitor 49-1 and 49-2 and capacitor 50-1 and 50-2 ground connection.
Fig. 4 is the assembly drawing according to first embodiment of high-frequency amplifier of the present invention.
In the figure, same parts is with representing with the same label of Fig. 3.
On the one side of circuit board 51-1, form the rectangular microstrip line 52-1 and the 52-2 of series connection, and power line 48-1 and ground connection figure 53-1, power line 48-1 and ground connection figure 53-1 comprise the rectangle circuit with microstrip line 52-1 and 52-2 arrangement in parallel.Between the opposite end of microstrip line 52-1 and 52-2, connect a capacitor 41.Between microstrip line 52-2 and power line 48-1, be connected an inductor 43.Capacitor 49-1 and 49-2 are connected in parallel between power line 48-1 and ground connection figure 53-1.
On the one side of circuit board 51-2, form the rectangular microstrip line 52-3 and the 52-4 of series connection, comprise power line 48-2 and ground connection figure 53-2 with the rectangle circuit of microstrip line 52-3 and 52-4 arrangement in parallel.The end that the grid of FET 42 is relative with the end that is connected capacitor 41 with microstrip line 52-2 connects, and the drain electrode of FET 42 is connected with the end of microstrip line 52-3.Capacitor 44 is connected between the end of relative end of end that the drain electrode of microstrip line 52-3 and FET 42 connects and microstrip line 52-4.Inductor 45 and capacitor 46 are connected between microstrip line 52-3 and the power line 48-2.Capacitor 50-1 and 50-2 are connected between power line 48-2 and the ground connection figure 53-2.
Corresponding relation between parts shown in Figure 1 and the present embodiment is as follows.Capacitor 41,44,49-1,49-2,50-1 and 50-2, FET 42, and inductor 43 and 45 reaches power line 48-1 and 48-2 corresponding to amplifying device 11.Parallel resonator 47 is corresponding to filter 12.
Operation such as Fig. 5 graphic extension according to first embodiment of high-frequency amplifier of the present invention.
Following with reference to figure 3 to Fig. 5, the narration present embodiment operation.FET 42 is applied above-mentioned bias voltage Vgs and supply voltage Vds, so that the operating point of FET 42 can be arranged on or as class ab ammplifier or as the proper handling point of class-b amplifier.
The capacitance of capacitor 41 and 42 is set respectively in advance, and inductor 43 and 45 inductance value, and characteristic impedance and the line length value of microstrip line 52-1 to 52-4 are so that to wish that precision is realizing impedance matching between FET 42 and the prearranged circuit and between the following stages.
The electric capacity of capacitor 49-1,49-2,50-1 and 50-2 is set in advance, so that the impedance of power line 48-1 and 48-2 is for wishing little value about multi-carrier signal to be amplified.And, have f respectively by combination
1To f
NThe RF signal of carrier frequency produces multi-carrier signal.For the sake of simplicity, suppose and only have f
1And f
2Two ripples.
Set in advance the inductance of the inductor 45 that is included in the parallel resonator 47 and the electric capacity of capacitor 46, so that satisfy following given condition (1) and (2).
(1) the resonance frequency fr of parallel resonator 47 is wishing the value of equaling fr=(f under the precision
1+ f
2)/2 (among Fig. 5 (1)).
(2) in the non-linear deviation range of FET 42, the level of cross modulation distortion is suppressed for allowing level (among Fig. 5 (2)), wherein produce cross modulation distortion, so that the level of above-mentioned basic modulation product is under each impedance of the following stages of inside equivalent electric circuit, capacitor 44 and the circuit that is connected by capacitor 44 that combination is connected with the drain electrode of FET 42, with the modulation product generation of basic modulation product.
Because being suppressed to by parallel resonator 47, the component of the basic modulation product that is produced wishes level during the process of amplifying above-mentioned multi-carrier signal, so suppressed cross modulation distortion similarly with the modulation product generation of basic modulation product.
Like this, according to the present invention, as long as circuit with the simple-arranged that comprises parallel resonator 47, following stages with this circuit and circuit stops output, the Frequency Distribution that makes resonance frequency, quality factor and the impedance of parallel resonator 47 be suitable for wishing, and be arranged on the value that satisfies above-mentioned condition (1) and (2), then can be with high SN than the multi-carrier signal that obtains to wish level.
And, according to present embodiment, amplify a plurality of RF signals that comprise in the multi-carrier signal simultaneously with high SN ratio.Therefore, can reduce maintenance and operating cost and power consumption.In addition, alleviated restriction, and improved reliability according to the wireless base station office foundation of present embodiment.
In the present embodiment, according to the Frequency Distribution of hope, the frequency f of carrier wave
1To f
NBe given as given value.
Should be appreciated that, even do not know such Frequency Distribution, but as long as the known frequency band that multi-carrier signal occupied to be amplified, and the maximum of difference on the frequency between the carrier frequency on the frequency axis, then by the amplitude response of parallel resonator 47 is preset as such level, the level that wherein allows to the basic modulation product that distributes in being less than or equal to peaked frequency band suppresses for wishing level, and the present invention can be used for various Frequency Distribution so.
In the present embodiment, the quality factor of parallel resonator 47 are set to satisfy the value of above-mentioned condition (2).
Yet, be preset as a value in quality factor, wherein the second harmonic of multi-carrier signal suppresses for to be less than or equal under the situation of desired value, and shown in (3) among Fig. 5 and (4), the characteristic of looking genuine and efficient all are improved.
And in the present embodiment, an end of parallel resonator 47 directly is connected with power line 48-2, so that resonator ground connection in alternating current path.
Yet as shown in Figure 6, an end of parallel resonator 47 can be by the capacitor 61 direct ground connection of a blocking-up direct-current coupling, and wherein the impedance of the impedance ratio parallel resonator 47 under the frequency band that is occupied by multi-carrier signal is enough little.Shown in 62 an inductor, wherein quite little in Fig. 6 for the impedance of multi-carrier signal.
In another feature of present embodiment, parallel resonator 47 is suitably for a filter, so that the level of basic modulation product is suppressed to desired value.
Yet, if filter has and the Frequency Distribution fit of wishing, and make the characteristic that is inhibited at following basic modulation product that can produce of this Frequency Distribution, then parallel resonator 47 can be with a notch filter (Fig. 7 (a)) that has attenuation pole under the frequency Δ f of basic modulation product, or a filter (Fig. 7 (b)) that has passband under the low frequency that comprises frequency Δ f replaces.
Fig. 8 represents second embodiment according to high-frequency amplifier of the present invention.
In the figure, similar elements and function with and same label shown in Figure 3 represent, and will omit its narration here.
Present embodiment and embodiment illustrated in fig. 3 between arrange be not both 71 replacements of parallel resonator 47 usefulness inductors, and the drain electrode of FET 42 is by comprising series resonator 74 ground connection of series reactor 72 and capacitor 73.
About the corresponding relation between present embodiment and the element shown in Figure 1, except that the series resonator 74 corresponding filters 21 that comprise inductor 72 and capacitor 73, identical with the corresponding relation of above-mentioned first embodiment.
Fig. 9 is the assembly drawing according to second embodiment of high-frequency amplifier of the present invention.
In the figure, similar elements and function with and same label shown in Figure 4 represent, and will omit its narration here.
Present embodiment with embodiment illustrated in fig. 3 between element aspect different as follows.
(1) on the surface of circuit board 51-2, microstrip line 52-3 is arranged, near the end of the microstrip line 52-3 that the drain electrode of FET 42 is attached thereto, form a rectangle bonding land 81R in given distance.
(2) from the given distance of bonding land 81R, also form a ground connection rectangle bonding land 81G.
(3) inductor 72 is connected between the end and bonding land 81R of microstrip line 52-3.
(4) inductor 71 is connected between the other end and power line 48-2 of microstrip line 52-3.
(5) capacitor 73 is connected between bonding land 81R and the 81G.
Below with reference to Fig. 5, Fig. 8 and Fig. 9, the operation of present embodiment is described.
Inductor 71 forms the path of a drain electrode of 42 from power line 48-2 to FET, and its is supplied with and drives direct current power.
This inductor 71 has an inductance, and it realizes impedance matching between FET 42 and the following stages that is connected by capacitor 44.
The inductance of the inductor 72 of composition series resonator 74 and the electric capacity of capacitor 73 are preset as satisfy condition (a) and value (b).
(a) shown in (5) among Fig. 5, the resonance frequency of series resonator 74 almost is arranged on the central authorities of the frequency band that second harmonic occupied of multi-carrier signal.
(b) above-mentioned impedance matching keeps with high accuracy, and can obtain to wish transfer characteristic in the frequency band that multi-carrier signal occupies.
Because series resonator 74 is suppressed at the higher harmonics that produces during the process of amplifying multi-carrier signal, so compared with the prior art, has improved the characteristic of looking genuine.
In the present embodiment, the second harmonic that suppresses multi-carrier signal with series resonator 74.
Yet for example, as (a) and (b) among Figure 10 with (c), series resonator 74 may instead be:
(a) band pass filter, it has a passband, is arranged in the frequency band that second harmonic distributes,
(b) comb filter has passband under the frequency doubled frequency of each included carrier wave of multi-carrier signal,
(c) high pass filter has rejection band under the frequency of being less than or equal to the frequency band that higher harmonics distributes.
Figure 11 represents first embodiment according to amplifier element of the present invention.
In the figure, similar elements and function with and same label shown in Figure 6 represent, and will omit its narration here.
Characteristics embodiment illustrated in fig. 11 are the layout of FET 91, and it can replace FET 42 to install.
(1) package 92, and it also is used as the source end,
(2) lead-in wire 93G and 93D are installed on the package 92 by the insulating material (not shown), and corresponding to source end and drain terminal,
(3) contact pin 94 and lead-in wire 93G and 93D are installed within the package 92 on the given surface together,
(4) the FET sheet 96, are arranged in the contact pin 94, and be connected with lead-in wire 93G by gold thread 95-1 to 95-4, and be connected with lead-in wire 93D by gold thread 96-1 to 96-4,
(5) rectangular conductor figure 97 and FET sheet 96 are arranged in the contact pin 94 together,
(6) first ring-shaped figure 98-1 separate formation with the interval around wire pattern 97
(7) second ring-shaped figure 98-2, around first ring-shaped figure separating formation at interval, and with contact pin 94 (package 92) ground connection,
(8) gold thread 99-1 is connected between lead-in wire 93D and the wire pattern 97,
(9) gold thread 99-2 is connected between the lead-in wire 93D and the first wire pattern 98-1.
Corresponding relation between present embodiment and the element shown in Figure 2 is as follows.Wire pattern 97, the first ring-shaped figure 98-1, the second ring-shaped figure 98-2 and gold thread 99-1 and 99-2 are corresponding to filter 12.
In the FET 91 that arranges as mentioned above, wire pattern 97, the first wire pattern 98-1 and the second wire pattern 98-2 be according to desirable shape, size and layout, in contact pin 94 with film shape hierarchy or formation.Make the relative natural capacity rate of the material on the surface that should form these figures on it be preset as desired value, so that the capacitor that the capacitor 46 between formation and the wire pattern 97 and the first wire pattern 98-1 has same capacitance.And, between the first wire pattern 98-1 and the second wire pattern 98-2, form the capacitor that another and capacitor 61 have same capacitance.
Gold thread 99-1 and 99-2 are pre-formed desirable shape and given preliminary dimension, so that become the inductor that corresponds respectively to inductor 62 and 45.
Just, parallel resonator 47 and capacitor 61 shown in Figure 6 form on the FET 91 inner body ground that can replace FET 42 to install.One end of capacitor 61 with corresponding to the direct ground connection of the contact pin 94 (package 92) of the source end of FET 91.
Like this, in the present embodiment, even the distance of the included multicarrier of multi-carrier signal is big, but shown in Fig. 6 dotted line, because and the situation of parallel resonator 47 when the ground connection of the outside of FET 42 relatively, suppressed basic modulation product with high accuracy, institute is so that cross modulation is long-pending is suppressed effectively.
Figure 12 represents second embodiment according to amplifier element of the present invention.
In the figure, similar elements with and Fig. 8 and same label shown in Figure 11 represent, and will omit its narration here.
The characteristics of present embodiment shown in Figure 8 are the layout of FET 91A, and it can replace FET 42 to install.
Not being both of arranging between FET 91A and the FET shown in Figure 11 91 do not form the second ring-shaped figure 98-2, makes the first ring-shaped figure 98-1 and contact pin 94 (package 92) ground connection, and gold thread 92-2 is not set.
And about the corresponding relation between present embodiment and Fig. 2 block diagram, wire pattern 97, the first ring-shaped figure 98-1 and gold thread 99-1 are corresponding to filter 21.
In FET 91A as constituted above, the wire pattern 97 and the first wire pattern 98-1 be according to desirable shape, size and layout, in contact pin 94 with film shape hierarchy or formation.The relative natural capacity rate that makes the surface that forms these figures on it form material is preset as set-point.Therefore, between the wire pattern 97 and the first wire pattern 98-1, form a capacitor that has same capacitance with capacitor 73.
Gold thread 99-1 is pre-formed desirable shape and intended size, so that become the inductor corresponding to inductor 72.
Just, parallel resonator 47 shown in Figure 8 forms on the FET91A inner body ground that can replace FET 42 to install.One end of parallel resonator 47 with corresponding to the direct ground connection of the contact pin 94 (package 92) of the source end of FET 91A.
Like this, in the present embodiment, shown in Fig. 9 dotted line and the situation of the drain electrode of FET 42 when being arranged in series resonator 74 ground connection of FET 42 outsides relatively, suppressed second harmonic with high accuracy.Therefore, make SN than improving.
And in the present embodiment, FET sheet 96 and parallel resonator 47 or series resonator 74 are arranged in the contact pin 94, and link together by gold thread 96-1 to 96-4,99-1,99-2 and lead-in wire 93D, so that with the integrated integral body of multichip integrated circuit.
Yet gold thread 96-1 to 96-4,99-1 and 99-2 can be integrated with parallel resonator 47 or series resonator 74, so that for example form monolithic integrated circuit or hybrid integrated circuit.
In above-mentioned each embodiment, the present invention is applicable to the radiating portion of the mobile communication system of using cdma system.
Yet, should be appreciated that the present invention can be applied to any electronic apparatus, equipment or system of wherein amplifying above-mentioned multi-carrier signal, and irrelevant with multiple access method, modulator approach, frequency band, Frequency Distribution or channel frequence assignment.
And the present invention can be used for carrying out the radiating portion or the receiving unit of given processing simply in RF frequency band or IF frequency band in the wireless transmitting system except that mobile communication system or wired emission system scope.
In above-mentioned each embodiment, the present invention is applicable to the AB power-like amplifier, it with FET42,91 and 91A as amplifier element.
Yet, depend on amplifier element, amplifier element operating point, be used for and system, the level of the circuit of previous or following stages coupling, wait to amplify frequency band that multi-carrier signal occupies and frequency range, gain, SN than, linearity, and the efficient that will realize, can use the present invention, and with whether to increase feedback circuit irrelevant.
Should be noted that to the invention is not restricted to the foregoing description, but various variations and change may be arranged within the scope of the present invention.And, can partly or within entire equipment improve.
Claims (12)
1. high-frequency amplifier comprises:
An amplifying device, be used to amplify by the multi-carrier signal that carrier wave produced of a plurality of separate modulation of combination and
A filter that is configured to parallel resonator is connected in parallel with the output of described amplifying device, it is characterized in that described filter has:
A rejection band is positioned within the frequency band range that described multi-carrier signal occupies;
Such transfer characteristic makes the level of noise is suppressed under the predetermined upper limit that described noise is the modulation product generation that equals frequency axis upper frequency difference Δ f with modulation product between the multi-carrier signal and frequency, as the composition product between the described carrier wave; With
A passband comprises described difference on the frequency Δ f in its scope.
2. high-frequency amplifier as claimed in claim 1, the described passband of wherein said filter has a frequency band, and it is less than or equal to and is the equal frequency of described difference on the frequency Δ f of its distribution.
3. high-frequency amplifier as claimed in claim 1, the described passband of wherein said filter has a frequency band, and the second harmonic of the described multi-carrier signal that wherein distributes, or a upper-passband are included as the described frequency band of its distribution.
4. high-frequency amplifier as claimed in claim 2, the described passband of wherein said filter has a frequency band, and the second harmonic of the described multi-carrier signal that wherein distributes, or a upper-passband are included as the described frequency band of its distribution.
5. high-frequency amplifier comprises:
An amplifying device is used to amplify the multi-carrier signal that carrier wave produced by a plurality of separate modulation of combination; With
A filter that is configured to series resonator is connected in parallel with the output of described amplifying device, has:
A rejection band is positioned within the frequency band range that described multi-carrier signal occupies,
A passband has a frequency band, and the second harmonic of the described multi-carrier signal that wherein distributes, or a upper-passband are included as the described frequency band of its distribution.
6. high-frequency amplifier as claimed in claim 1, wherein said filter be connected in parallel described amplifying device with and the load that is connected of the outlet side of described amplifying device between.
7. high-frequency amplifier as claimed in claim 2, wherein said filter be connected in parallel described amplifying device with and the load that is connected of the outlet side of described amplifying device between.
8. high-frequency amplifier as claimed in claim 3, wherein said filter be connected in parallel described amplifying device with and the load that is connected of the outlet side of described amplifying device between.
9. high-frequency amplifier as claimed in claim 4, wherein said filter be connected in parallel described amplifying device with and the load that is connected of the outlet side of described amplifying device between.
10. high-frequency amplifier as claimed in claim 5, wherein said filter be connected in parallel described amplifying device with and the load that is connected of the outlet side of described amplifying device between.
11. an amplifier element is used to amplify the multi-carrier signal that carrier wave produced by a plurality of separate modulation of combination, and it is characterized in that to form an integrated circuit that with filter is integrated described filter has:
An output of amplifier element is connected with described filter;
Such transfer characteristic makes the level of noise is suppressed under the high limit of tolerance that described noise produces with the modulation product that modulation product between the multi-carrier signal and frequency equal frequency axis upper frequency difference Δ f, as the composition product between the described carrier wave; With
A passband comprises described difference on the frequency Δ f in its scope.
12. an amplifier element is used to amplify the multi-carrier signal that carrier wave produced by a plurality of separate modulation of combination, and it is characterized in that to form an integrated circuit that with filter is integrated described filter has:
An output of amplifier element is connected with described filter; With
A passband comprises a frequency band, and the second harmonic of the described multi-carrier signal that wherein distributes, or a upper-passband are included as the described frequency band of its distribution.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48472/1999 | 1999-02-25 | ||
| JP04847299A JP3665711B2 (en) | 1999-02-25 | 1999-02-25 | High frequency amplifier and amplifying element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1264957A CN1264957A (en) | 2000-08-30 |
| CN1279692C true CN1279692C (en) | 2006-10-11 |
Family
ID=12804337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB991270940A Expired - Fee Related CN1279692C (en) | 1999-02-25 | 1999-12-29 | High frequency amplifier and amplifying component |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6392491B1 (en) |
| JP (1) | JP3665711B2 (en) |
| CN (1) | CN1279692C (en) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1275198A2 (en) * | 2000-03-28 | 2003-01-15 | California Institute Of Technology | Concurrent multi-band low noise amplifier architecture |
| AU2002231210A1 (en) * | 2001-03-14 | 2002-10-03 | California Institute Of Technology | Concurrent dual-band receiver architecture |
| TW486861B (en) * | 2001-07-04 | 2002-05-11 | Ind Tech Res Inst | Impedance matching circuit for a multi-band power amplifier |
| JP4688410B2 (en) * | 2003-07-15 | 2011-05-25 | スタンレー電気株式会社 | Broadband amplifier |
| JP2005117618A (en) * | 2003-09-19 | 2005-04-28 | Sharp Corp | Integrated circuit and optical pickup device |
| JP5285842B2 (en) * | 2006-04-13 | 2013-09-11 | パナソニック株式会社 | Integrated circuit mounting board and power line communication device |
| US7724084B2 (en) | 2007-01-25 | 2010-05-25 | Research In Motion Limited | System and method for controlling radio frequency transmissions from an electronic device |
| US8143951B2 (en) | 2010-07-08 | 2012-03-27 | Telefonaktiebolaget L M Ericsson (Publ) | Broadband transistor bias network |
| KR101758086B1 (en) * | 2011-04-12 | 2017-07-17 | 숭실대학교산학협력단 | Power amplifier with advanced linearity |
| US9083291B2 (en) * | 2011-08-12 | 2015-07-14 | Bae Systems Information And Electronic Systems Integration Inc. | Low voltage high efficiency gallium arsenide power amplifier |
| US8803615B2 (en) * | 2012-01-23 | 2014-08-12 | Qualcomm Incorporated | Impedance matching circuit with tunable notch filters for power amplifier |
| JP5808699B2 (en) * | 2012-03-05 | 2015-11-10 | ルネサスエレクトロニクス株式会社 | High frequency amplifier |
| US8624676B2 (en) | 2012-03-08 | 2014-01-07 | Telefonaktiebolaget L M Ericsson (Publ) | Broadband transistor bias network |
| CN102832892B (en) * | 2012-08-09 | 2015-09-16 | 中国电子科技集团公司第五十五研究所 | A kind of star Ku band power amplifiers |
| WO2017141453A1 (en) * | 2016-02-17 | 2017-08-24 | 株式会社村田製作所 | Power amplifier |
| JP2020096253A (en) | 2018-12-11 | 2020-06-18 | 住友電気工業株式会社 | Multistage amplifier |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2059507A1 (en) * | 1970-12-03 | 1972-06-08 | Krupp Gmbh | Switching arrangement for damping a broadband basic noise level and interference signals superimposed on it |
| US3987370A (en) * | 1975-02-06 | 1976-10-19 | Frequency Devices, Inc. | Active filter |
| US5008634A (en) * | 1988-11-18 | 1991-04-16 | C. B. Labs, Inc. | System for controlling the dynamic range of electric musical instruments |
| JP2919175B2 (en) | 1992-05-06 | 1999-07-12 | 日本電気株式会社 | Linear compensation circuit |
| JP2503917B2 (en) | 1993-09-22 | 1996-06-05 | 日本電気株式会社 | High efficiency power amplifier |
| JPH07240638A (en) | 1994-03-01 | 1995-09-12 | Sumitomo Electric Ind Ltd | High frequency amplifier |
| JP2552089B2 (en) | 1994-05-23 | 1996-11-06 | 埼玉日本電気株式会社 | FET amplifier power consumption reduction method |
| US5589799A (en) * | 1994-09-29 | 1996-12-31 | Tibbetts Industries, Inc. | Low noise amplifier for microphone |
| JP2720851B2 (en) | 1995-10-25 | 1998-03-04 | 日本電気株式会社 | Amplifier bias current control circuit |
| US5712593A (en) * | 1996-02-05 | 1998-01-27 | Motorola, Inc. | Linear power amplifier with distortion detection |
| JP3060981B2 (en) | 1997-02-21 | 2000-07-10 | 日本電気株式会社 | Microwave amplifier |
-
1999
- 1999-02-25 JP JP04847299A patent/JP3665711B2/en not_active Expired - Fee Related
- 1999-12-29 US US09/474,166 patent/US6392491B1/en not_active Expired - Lifetime
- 1999-12-29 CN CNB991270940A patent/CN1279692C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1264957A (en) | 2000-08-30 |
| JP3665711B2 (en) | 2005-06-29 |
| JP2000252765A (en) | 2000-09-14 |
| US6392491B1 (en) | 2002-05-21 |
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