CN1275795A - 用于加工晶片的设备 - Google Patents
用于加工晶片的设备 Download PDFInfo
- Publication number
- CN1275795A CN1275795A CN00118709A CN00118709A CN1275795A CN 1275795 A CN1275795 A CN 1275795A CN 00118709 A CN00118709 A CN 00118709A CN 00118709 A CN00118709 A CN 00118709A CN 1275795 A CN1275795 A CN 1275795A
- Authority
- CN
- China
- Prior art keywords
- unit
- production
- wafer
- equipment
- production unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 claims abstract description 107
- 238000000034 method Methods 0.000 claims abstract description 57
- 230000008569 process Effects 0.000 claims abstract description 54
- 238000005259 measurement Methods 0.000 claims description 24
- 230000007246 mechanism Effects 0.000 claims description 21
- 239000002994 raw material Substances 0.000 claims description 10
- 241001269238 Data Species 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 238000010972 statistical evaluation Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000013043 chemical agent Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 description 16
- 230000005540 biological transmission Effects 0.000 description 11
- 239000010410 layer Substances 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000007704 wet chemistry method Methods 0.000 description 2
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012432 intermediate storage Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Automation & Control Theory (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19922919.8 | 1999-05-19 | ||
DE19922919A DE19922919C2 (de) | 1999-05-19 | 1999-05-19 | Anlage zur Bearbeitung von Wafern |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1275795A true CN1275795A (zh) | 2000-12-06 |
CN100334685C CN100334685C (zh) | 2007-08-29 |
Family
ID=7908482
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB001187090A Expired - Fee Related CN100334685C (zh) | 1999-05-19 | 2000-05-19 | 用于加工晶片的设备 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6542837B1 (zh) |
JP (1) | JP2001006991A (zh) |
KR (1) | KR100435093B1 (zh) |
CN (1) | CN100334685C (zh) |
DE (1) | DE19922919C2 (zh) |
TW (1) | TW473851B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100358098C (zh) * | 2005-08-05 | 2007-12-26 | 中微半导体设备(上海)有限公司 | 半导体工艺件处理装置 |
CN106445624A (zh) * | 2015-08-07 | 2017-02-22 | 睿励科学仪器(上海)有限公司 | 一种无硅片的测量流程编译方法 |
CN109545722A (zh) * | 2018-12-11 | 2019-03-29 | 上海精测半导体技术有限公司 | 半导体生产***及其量测***和量测设备 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10161307A1 (de) * | 2001-12-13 | 2003-07-03 | Infineon Technologies Ag | Verfahren und Vorrichtung zum Analysieren eines wiederholt auftretenden Prozesses und Verfahren und Vorrichtung zum Evaluieren einer Mehrzahl von Prozeßvorrichtungen gleichen Typs sowie Verfahren und Vorrichtung zum Verbessern der Leistungsfähigkeit einer Prozeßvorrichtung |
DE102009023424A1 (de) | 2009-05-18 | 2010-12-02 | Bus Elektronik Gmbh & Co. Kg | Verfahren und Vorrichtung zur Qualitätsprüfung von elektrischen, elektronischen und/oder mechanischen Komponenten |
CN105929801A (zh) * | 2016-04-28 | 2016-09-07 | 中国电子科技集团公司第四十五研究所 | 半导体加工工艺参数智能控制方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5233191A (en) * | 1990-04-02 | 1993-08-03 | Hitachi, Ltd. | Method and apparatus of inspecting foreign matters during mass production start-up and mass production line in semiconductor production process |
US5617340A (en) * | 1994-04-28 | 1997-04-01 | The United States Of America As Represented By The Secretary Of Commerce | Method and reference standards for measuring overlay in multilayer structures, and for calibrating imaging equipment as used in semiconductor manufacturing |
US5923430A (en) * | 1993-06-17 | 1999-07-13 | Ultrapointe Corporation | Method for characterizing defects on semiconductor wafers |
US5646870A (en) * | 1995-02-13 | 1997-07-08 | Advanced Micro Devices, Inc. | Method for setting and adjusting process parameters to maintain acceptable critical dimensions across each die of mass-produced semiconductor wafers |
JP3639636B2 (ja) * | 1995-04-25 | 2005-04-20 | 株式会社ルネサステクノロジ | 半導体ウェハの不良解析装置及び不良解析方法 |
DE19518238C2 (de) * | 1995-05-12 | 2001-12-13 | Sorbios Verfahrenstech | Verfahren und Vorrichtung zur Erfassung und Überwachung des Reaktionsablaufs von Prozessen in der Halbleiterfertigung |
IL113829A (en) * | 1995-05-23 | 2000-12-06 | Nova Measuring Instr Ltd | Apparatus for optical inspection of wafers during polishing |
US5910846A (en) * | 1996-05-16 | 1999-06-08 | Micron Technology, Inc. | Method and apparatus for detecting the endpoint in chemical-mechanical polishing of semiconductor wafers |
US6091498A (en) * | 1996-07-15 | 2000-07-18 | Semitool, Inc. | Semiconductor processing apparatus having lift and tilt mechanism |
US5943130A (en) * | 1996-10-21 | 1999-08-24 | Insitec, Inc. | In situ sensor for near wafer particle monitoring in semiconductor device manufacturing equipment |
FR2760085B1 (fr) * | 1997-02-26 | 1999-05-14 | Instruments Sa | Dispositif et procede de mesures tridimensionnelles et d'observation in situ d'une couche superficielle deposee sur un empilement de couches minces |
DE19711702C1 (de) * | 1997-03-20 | 1998-06-25 | Siemens Ag | Anordnung zur Bearbeitung einer Substratscheibe und Verfahren zu deren Betrieb |
US5910011A (en) * | 1997-05-12 | 1999-06-08 | Applied Materials, Inc. | Method and apparatus for monitoring processes using multiple parameters of a semiconductor wafer processing system |
JP3771050B2 (ja) * | 1997-06-20 | 2006-04-26 | 東京エレクトロン株式会社 | 制御システム |
JP2000164476A (ja) * | 1998-11-26 | 2000-06-16 | Mitsubishi Electric Corp | 半導体製造工程の管理方法、半導体製造装置の管理方法、及び半導体製造環境の管理方法 |
-
1999
- 1999-05-19 DE DE19922919A patent/DE19922919C2/de not_active Expired - Fee Related
-
2000
- 2000-05-18 JP JP2000146489A patent/JP2001006991A/ja active Pending
- 2000-05-18 KR KR10-2000-0026617A patent/KR100435093B1/ko not_active IP Right Cessation
- 2000-05-19 US US09/574,823 patent/US6542837B1/en not_active Expired - Lifetime
- 2000-05-19 CN CNB001187090A patent/CN100334685C/zh not_active Expired - Fee Related
- 2000-08-02 TW TW089109561A patent/TW473851B/zh not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100358098C (zh) * | 2005-08-05 | 2007-12-26 | 中微半导体设备(上海)有限公司 | 半导体工艺件处理装置 |
CN106445624A (zh) * | 2015-08-07 | 2017-02-22 | 睿励科学仪器(上海)有限公司 | 一种无硅片的测量流程编译方法 |
CN109545722A (zh) * | 2018-12-11 | 2019-03-29 | 上海精测半导体技术有限公司 | 半导体生产***及其量测***和量测设备 |
CN109545722B (zh) * | 2018-12-11 | 2019-08-20 | 上海精测半导体技术有限公司 | 半导体生产***及其量测***和量测设备 |
Also Published As
Publication number | Publication date |
---|---|
KR100435093B1 (ko) | 2004-06-09 |
TW473851B (en) | 2002-01-21 |
CN100334685C (zh) | 2007-08-29 |
DE19922919A1 (de) | 2000-12-07 |
DE19922919C2 (de) | 2002-01-17 |
JP2001006991A (ja) | 2001-01-12 |
US6542837B1 (en) | 2003-04-01 |
KR20010020854A (ko) | 2001-03-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: INFINEON TECHNOLOGIES AG Free format text: FORMER OWNER: SIEMENS AKTIENGESELLSCHAFT Effective date: 20130220 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130220 Address after: German Neubiberg Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: Siemens AG Effective date of registration: 20130220 Address after: Munich, Germany Patentee after: QIMONDA AG Address before: German Neubiberg Patentee before: Infineon Technologies AG |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20151223 Address after: German Berg, Laura Ibiza Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: QIMONDA AG |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070829 Termination date: 20170519 |
|
CF01 | Termination of patent right due to non-payment of annual fee |