CN1266496C - Manufacturing meethod of colour filter - Google Patents
Manufacturing meethod of colour filter Download PDFInfo
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- CN1266496C CN1266496C CN 03100780 CN03100780A CN1266496C CN 1266496 C CN1266496 C CN 1266496C CN 03100780 CN03100780 CN 03100780 CN 03100780 A CN03100780 A CN 03100780A CN 1266496 C CN1266496 C CN 1266496C
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Abstract
The present invention relates to a manufacturing method of a color filter, which utilizes the principle that when positioned on a hydrophobic surface, hydrophobic materials have small surface tension; when positioned on a hydrophilic surface, the hydrophobic materials have large surface tension. The present invention uses a method of processing the surface region of a picture element into the hydrophobic surface and processing the surface region of a non-picture element into the hydrophilic surface, which prevents adjacent coloring materials with allochromatic color from leaking and mixing so as to produce a color filter with good color reproducibility. The present invention comprises the processes of forming an interlayer insulating layer on a substrate, forming a plurality of scanning lines and a plurality of signal lines on the interlayer insulating layer for defining a plurality of picture element regions and one non-picture element region, forming the hydrophobic surface in the picture element regions, forming the hydrophilic surface in the non-picture element region, and projecting the coloring materials in the picture element regions by using an ink jetting method.
Description
Technical field
The invention relates to the manufacture method of a kind of colored filter (color filter), particularly at utilizing ink-jet method to make the method for colored filter.Utilize hydrophobic material on hydrophobic surface, its surface tension is little, and hydrophobic material is on hydrophilic surface, the principle that its surface tension is big.By the picture element surf zone is processed into hydrophobic surface, and non-picture element surf zone is processed into the method for hydrophilic surface, that avoids adjacent allochromatic colour coloured material generation look oozes mixing phenomena mutually, to make the good colored filter of color reproduction.
Background technology
Generally speaking, the main member of liquid crystal indicator is the two plate electrode substrates subtend configuration under the situation in tool gap by the picture element (pixel) that has the mutual subtend configuration that is formed by electrode separately, during this time the crack around edge sealing and the double team liquid crystal layer constitutes.
In liquid crystal indicator, particularly can show in the liquid crystal indicator of any chromatic image picture, generally can use colored filter.Colored filter be possess on arbitrary plate base in two plate electrode substrates R, G, B (red, green, blue) three primary colors or corresponding to each picture element can be colored the configuration of polychrome form and aspect dyeing element.
In the manufacturing method of color filters, have be colored dispersed color on the layer with the pigment dispersing method that forms colored filter, be colored disperse dyes on the layer with the dyestuff dispersion method that forms colored filter or with electricity the electricity that forms colored filter method or the illuminating colour colored filter used with intaglio plate or lithographic plate makes ink printing on substrate to form all commercializations of print process of colored filter.
But in this type of previous manufacture method, because all use repeatedly micro-photographing process (Lithography process) and etch process in the colored filter manufacturing engineering, the processing procedure of colored filter contains very miscellaneous problem.And, further require the precision of little shadow and etch process for the correspondence picture element size of miniaturization more and more, and have the problem that is difficult for reaching simultaneously this excellent precision and rate of good quality rate.And this little shadow and etch process need more than the triplicate at least, to produce the colored filter of R, G, B three looks, so processing procedure is numerous and diverse and cost also increases thereupon.
In print process,, make the miscellaneous of galley and generation problem as hereinbefore in addition because exist though when forming colored filter, directly do not use etching technique.And in print process, corresponding more meticulous picture element size has actual difficult problem to form accurate colored filter.
Recently, the someone uses ink-jet method (Inkjet printing) to make colored filter.But make with ink-jetting style in occasion of colored filter at this type of, the coloured material that generally throwed be colored partly around look can take place at last with adjacent allochromatic colour coloured material ooze mixing mutually, and exist assertive colours to reproduce the problem of difficulty.Even therefore may reach the good turnout of making colored filter, but its color reproduction of the colored filter of gained is low by ink discharge device.Therefore use the color reproduction and the low problem of display quality that have chromatic image in the liquid crystal indicator of colored filter of this ink-jetting style.
Summary of the invention
In above-mentioned background of invention, known use ink-jet method (Inkjet printing) is made colored filter, coloured material be colored partly around can with adjacent allochromatic colour coloured material generation look ooze mixing mutually, and exist assertive colours to reproduce the problem of difficulty.The invention provides a kind of new manufacturing method of color filters, avoid said circumstances to produce.
One object of the present invention is to provide a kind of manufacturing method of color filters.By the picture element surf zone is processed into hydrophobic surface, and non-picture element surf zone is processed into the method for hydrophilic surface, that avoids adjacent allochromatic colour coloured material generation look oozes mixing phenomena mutually, to make the good colored filter of color reproduction.
Another purpose of the present invention is to provide a kind of manufacturing method of color filters.Can present water wettability by earth silicon material through the ultraviolet ray irradiation, and polysilicon or amorphous silicon material can present hydrophobic characteristic through the ultraviolet ray irradiation, ooze mixing phenomena mutually with what avoid adjacent allochromatic colour coloured material generation look, to make the good colored filter of color reproduction.
According to the above purpose, the invention provides a kind of manufacturing method of color filters, comprise: form interbedded insulating layer (or, on a substrate, form interbedded insulating layer) on a substrate; Form a plurality of sweep traces and a plurality of signal line on this interlayer insulating film (or, on this interlayer insulating film, form a plurality of sweep traces and a plurality of signal line), in order to define an a plurality of picture elements zone and a non-picture element zone; Form a hydrophobic surface in a plurality of picture elements zone (or, form a hydrophobic surface) in a plurality of picture elements zone; Form a hydrophilic surface in non-picture element zone (or, form a hydrophilic surface) in non-picture element zone; And utilize ink-jet method that one coloured material is projeced into a plurality of picture elements zone.
According to above-mentioned conception, wherein a plurality of sweep traces and a plurality of signal line are vertical mutually.
According to above-mentioned conception, wherein substrate comprises the plurality of films transistor.
According to above-mentioned conception, wherein a plurality of sweep traces and a plurality of signal line and plurality of films transistor electrically connect.
According to above-mentioned conception, wherein coloured material is a hydrophobic material.
According to the above purpose, the invention provides a kind of manufacturing method of color filters, comprise: form interbedded insulating layer on substrate; Form a plurality of sweep traces and a plurality of signal line on interlayer insulating film, in order to define an a plurality of picture elements zone and a non-picture element zone; Form a silicon dioxide layer on interlayer insulating film; With ultraviolet ray irradiation silicon dioxide layer; Form a covering layer on silicon dioxide layer; With ultraviolet ray irradiation covering layer; Removal is positioned at the covering layer in non-picture element zone to expose silicon dioxide layer; And utilize ink-jet method that one coloured material is projeced into a plurality of picture elements zone.
According to above-mentioned conception, wherein a plurality of sweep traces and a plurality of signal line are vertical mutually.
According to above-mentioned conception, wherein substrate comprises the plurality of films transistor.
According to above-mentioned conception, wherein a plurality of sweep traces and a plurality of signal line and plurality of films transistor electrically connect.
According to above-mentioned conception, wherein the step with ultraviolet ray irradiation silicon dioxide layer comprises: get the interarea side at substrate and insert one first light shield; Reach through first light shield and shine silicon dioxide layer with ultraviolet ray.
According to above-mentioned conception, wherein first light shield is in the pattern tool opaqueness of top, a plurality of picture elements zone.
According to above-mentioned conception, wherein the material of covering layer is selected from following group: polysilicon and amorphous silicon.
According to above-mentioned conception, wherein the step with ultraviolet ray irradiation covering layer comprises: get the interarea side at substrate and insert one second light shield; Reach through second light shield and shine covering layer with ultraviolet ray.
According to above-mentioned conception, wherein second light shield is in the pattern tool opaqueness of top, non-picture element zone.
According to above-mentioned conception, wherein coloured material is a hydrophobic material.
According to the purpose of the above, the invention provides a kind of manufacturing method of color filters, comprise: form interbedded insulating layer on substrate; Form a plurality of sweep traces and a plurality of signal line on interlayer insulating film, in order to define an a plurality of picture elements zone and a non-picture element zone; Form a silicon dioxide layer on interlayer insulating film; Form a covering layer on silicon dioxide layer; Removal is positioned at the covering layer in non-picture element zone to expose silicon dioxide layer; With ultraviolet irradiated substrate; And utilize ink-jet method that one coloured material is projeced into a plurality of picture elements zone.
According to above-mentioned conception, wherein a plurality of sweep traces and a plurality of signal line are vertical mutually.
According to above-mentioned conception, wherein substrate comprises the plurality of films transistor.
According to above-mentioned conception, wherein a plurality of sweep traces and a plurality of signal line and plurality of films transistor electrically connect.
According to above-mentioned conception, wherein the material of covering layer is selected from following group: polysilicon and amorphous silicon.
According to above-mentioned conception, wherein remove the covering layer that is positioned at non-picture element zone and comprise: apply a photoresist layer in covering layer with the step of exposing silicon dioxide layer; The patterning photoresist layer; And etching is not by covering layer that photoresist layer covered.
According to above-mentioned conception, wherein coloured material is a hydrophobic material.
According to the above purpose, the invention provides a kind of manufacturing method of color filters, comprise: form interbedded insulating layer on substrate; Form a plurality of sweep traces and a plurality of signal line on interlayer insulating film, in order to define an a plurality of picture elements zone and a non-picture element zone; Shine this substrate with ultraviolet ray; And utilize ink-jet method that one coloured material is projeced into this a plurality of picture elements zone.
According to above-mentioned conception, wherein these a plurality of sweep traces and this a plurality of signal line are vertical mutually.
According to above-mentioned conception, wherein this substrate comprises the plurality of films transistor.
According to above-mentioned conception, wherein these a plurality of sweep traces and this a plurality of signal line and this plurality of films transistor electrically connect.
According to above-mentioned conception, wherein this interlayer insulating film is a silicon dioxide.
According to above-mentioned conception, wherein this coloured material is a hydrophilic material.
Description of drawings
What Fig. 1 illustrated is the planimetric map of colour liquid crystal display device;
What Fig. 2 illustrated is the fragmentary cross-sectional view of colour liquid crystal display device;
What Fig. 3 A, B illustrated is the processing procedure synoptic diagram of the first embodiment of the present invention;
What Fig. 4 A, B illustrated is the processing procedure synoptic diagram of the second embodiment of the present invention.
What Fig. 5 illustrated is the fragmentary cross-sectional view of colour liquid crystal display device; And
What Fig. 6 illustrated is the processing procedure synoptic diagram of the third embodiment of the present invention.
The diagrammatical symbol explanation:
11: signal line
12: sweep trace
13: thin film transistor (TFT)
15: the picture element zone
20: glass substrate
21: interlayer insulating film
23: silicon dioxide layer
24: polysilicon layer or amorphous silicon layer
25: colored filter
31,32,41: light shield
33,43,63: ultraviolet ray
Embodiment
Some embodiments of the present invention will be described in detail as follows.Yet except describing in detail, the present invention can also implement in other embodiments widely, and scope of the present invention do not limited, and the scope of protection of present invention is as the criterion with claims of the present invention institute restricted portion.
First embodiment of the present invention asks for an interview the planimetric map of colour liquid crystal display device shown in Figure 1 and the sectional view of colour liquid crystal display device shown in Figure 2.Fig. 3 A, B are the schematic diagram of processing procedure again.At first, form thin film transistor (TFT) 13 (TFT:Thin Film Transistor) on glass substrate 20, this thin film transistor (TFT) 13 can use general manufacture of semiconductor method and be made.Then, form roughly comprehensive interlayer dielectric 21 that covers on glass substrate 20 and thin film transistor (TFT) 13, the signal line 11 that disposes sweep trace 12 and vertical scan line 12 then is on interlayer dielectric 21 and be rectangular, and wherein sweep trace 12, signal line 11 electrically connect with thin film transistor (TFT) 13.Then, as shown in Figure 3A, form a silicon dioxide layer 23, insert light shields 31 and irradiation ultraviolet radiation 33 in glass substrate 20 fronts then at interlayer dielectric 21.At this moment, make the light-shielding pattern that covers picture element zone 15, therefore, only expose optionally irradiation ultraviolet radiation 33 of silicon dioxide layer 23 partly in the not shading of this light-shielding pattern through light shield 31.Silicon dioxide layer will form hydrophilic surface (hydrophilic surface) through ultraviolet irradiation, so the silicon dioxide layer in non-picture element zone all will form hydrophilic surface because of ultraviolet irradiation.Then, shown in Fig. 3 B, form a polysilicon layer (poly silicon) or amorphous silicon layer (amorphous silicon) 24 on the silicon dioxide layer 23, still insert light shields 32 and irradiation ultraviolet radiation 33 in glass substrate 20 fronts.At this moment, make the light-shielding pattern that covers non-picture element zone through light shield 32, therefore, only expose partly in the not shading of this light-shielding pattern polysilicon layer or amorphous silicon layer 24 irradiation ultraviolet radiation 33 optionally.Polysilicon layer or amorphous silicon layer will form hydrophobic surface (hydrophobic surface) through ultraviolet irradiation, so the polysilicon layer in picture element zone 15 or amorphous silicon layer 24 all will form hydrophobic surface because of ultraviolet irradiation.Next step is that the polysilicon layer in non-picture element zone or amorphous silicon layer are removed, to expose the silicon dioxide layer that has shone through ultraviolet ray.Follow, adopt ink discharge device to utilize ink-jet method that R, G, B three chromatic colorant materials are projeced into aforementioned picture element zone 15, by this, the coated part of glass substrate 20 is colored, and forms colored filter 25.
Because hydrophobic material is on hydrophobic surface, its surface tension is little so easily cover on the hydrophobic surface.On the other hand, hydrophobic material is on hydrophilic surface, and its surface tension is very big, so be not easy very much to cover on the hydrophilic surface.At this moment, coloured material of all kinds is a hydrophobic material, forms hydrophobic surface via the polysilicon layer in aforementioned ultraviolet ray irradiation picture element zone or amorphous silicon layer.On the other hand, non-picture element zone is also with ultraviolet ray irradiation silicon dioxide layer and form hydrophilic surface.Therefore, when ink discharge device utilizes ink-jet method that R, G, B three chromatic colorant materials are projeced into aforementioned picture element zone, to cover especially easily because of the picture element region field surface has been processed into hydrophobic surface, but non-picture element zone then because of being processed into hydrophilic surface, the surface is not easy to cover very much.It is mixed so can to suppress oozing of the coated coloured material of each picture element borderline region, and its result is for can make the good colored filter of color reproduction 25.
Second embodiment of the present invention asks for an interview the planimetric map of colour liquid crystal display device shown in Figure 1 and the sectional view of colour liquid crystal display device shown in Figure 2.Fig. 4 A, B are the schematic diagram of processing procedure again.At first, form thin film transistor (TFT) 13 (TFT:Thin Film Transistor) on glass substrate 20, this thin film transistor (TFT) 13 can use general manufacture of semiconductor method and be made.Then, form roughly comprehensive interlayer dielectric 21 that covers on glass substrate 20 and thin film transistor (TFT) 13, the signal line 11 that disposes sweep trace 12 and vertical scan line 12 then is on interlayer dielectric 21 and be rectangular, and wherein sweep trace 12, signal line 11 electrically connect with thin film transistor (TFT) 13.Then, shown in Fig. 4 A, on substrate, form a silicon dioxide layer 23.Then on silicon dioxide layer 23, form a polysilicon layer (polysilicon) or amorphous silicon layer (amorphous silicon) 24, at the front surface coated photoresistance 42 of glass substrate 20 and utilize this photoresistance of light shield 41 patternings.Light shield 41 is the light-shielding pattern in a covering picture element zone 15, and therefore, only the photoresistance under this light-shielding pattern 42 is not removed, and all the other photoresistances 42 all are removed when developing.Then, etching is not by polysilicon layer or amorphous silicon layer 24 that photoresistance covered, to expose silicon dioxide layer 23.To be comprehensive ground irradiation ultraviolet radiation 43 after photoresistance 42 removals, polysilicon layer or amorphous silicon layer 24 are through the irradiation of ultraviolet ray 43, to form hydrophobic surface (hydrophobicsurface), and silicon dioxide layer 23 will form hydrophilic surface (hydrophilic surface) through the irradiation of ultraviolet ray 43.So the polysilicon layer in picture element zone 15 or amorphous silicon layer 24 all will form hydrophobic surface because of the irradiation of ultraviolet ray 43.The silicon dioxide layer 23 in non-picture element zone will form hydrophilic surface because of the irradiation of ultraviolet ray 43.Follow, adopt ink discharge device to utilize ink-jet method that R, G, B three chromatic colorant materials are projeced into aforementioned picture element zone 15, by this, the coated part of glass substrate 20 is colored, and forms colored filter 25.
Because hydrophobic material is on hydrophobic surface, its surface tension is little so easily cover hydrophobic surface.On the other hand, hydrophobic material is on hydrophilic surface, and its surface tension is very big, so be not easy very much to cover hydrophilic surface.At this moment, coloured material of all kinds is a hydrophobic material, forms hydrophobic surface via the polysilicon layer in aforementioned ultraviolet ray irradiation picture element zone or amorphous silicon layer.On the other hand, non-picture element zone is also with ultraviolet ray irradiation silicon dioxide layer and form hydrophilic surface.Therefore, when ink discharge device utilizes ink-jet method that R, G, B three chromatic colorant materials are projeced into aforementioned picture element zone, to cover especially easily because of the picture element region field surface has been processed into hydrophobic surface, but non-picture element zone then because of being processed into hydrophilic surface, the surface is not easy to cover very much.It is mixed so can to suppress oozing of the coated coloured material of each picture element borderline region, and its result is for can make the good colored filter of color reproduction 25.
The 3rd embodiment of the present invention asks for an interview the planimetric map of colour liquid crystal display device shown in Figure 1 and the sectional view of colour liquid crystal display device shown in Figure 5.Fig. 6 is the schematic diagram of processing procedure again.At first, form thin film transistor (TFT) 13 (TFT:Thin Film Transistor) on glass substrate 20, this thin film transistor (TFT) 13 can use general manufacture of semiconductor method and be made.Then, form roughly comprehensive interlayer dielectric 21 that covers on glass substrate 20 and thin film transistor (TFT) 13, the material of this interlayer insulating film 21 is a silicon dioxide, the signal line 11 that disposes sweep trace 12 and vertical scan line 12 then is on interlayer dielectric 21 and be rectangular, and wherein sweep trace 12, signal line 11 electrically connect with thin film transistor (TFT) 13.Then, as shown in Figure 6, utilize sweep trace 12 and signal line 11 to be used as light shield.From glass substrate 20 front illuminated ultraviolet rays 63.At this moment, be not scanned the interlayer insulating film 21 that line 12 and signal line 11 cover and all shine ultraviolet ray 63.Because of the irradiation of silicon dioxide through ultraviolet ray 63, to form hydrophilic surface (hydrophilic surface), and sweep trace 12 is to make with metal with signal line 11, metal surface itself is exactly hydrophobic surface (hydrophobic surface), and can not change its hydrophobic property because of the irradiation of ultraviolet ray 63.So the silicon dioxide layer 21 in picture element zone 15 all will form hydrophilic surface because of the irradiation of ultraviolet ray 63.The sweep trace 12 and the signal line 11 in non-picture element zone itself are hydrophobic surface.Follow again, adopt ink discharge device to utilize ink-jet method that R, G, B three chromatic colorant materials are projeced into aforementioned picture element zone 15.What pay special attention to is that the difference of present embodiment and preceding two embodiment maximums is that coloured material of all kinds will use hydrophilic material.By this, the coated part of glass substrate 20 is colored, and forms colored filter 25.
Because hydrophilic material is on hydrophilic surface, its surface tension is little so easily cover hydrophilic surface.On the other hand, hydrophilic material is on hydrophobic surface, and its surface tension is very big, so be not easy very much to cover hydrophobic surface.At this moment, coloured material of all kinds is a hydrophilic material, forms hydrophilic surface via the silicon dioxide layer in aforementioned ultraviolet ray irradiation picture element zone.On the other hand, the sweep trace 12 in non-picture element zone itself is hydrophobic surface with signal line 11.Therefore, when ink discharge device utilizes ink-jet method that the hydrophilic R of tool, G, B three chromatic colorant materials are projeced into aforementioned picture element zone, to cover especially easily because of the picture element region field surface has been processed into hydrophilic surface, but non-picture element zone then is not easy to cover for hydrophobic surface because of the surface very much.It is mixed so can to suppress oozing of the coated coloured material of each picture element borderline region, and its result is for can make the good colored filter of color reproduction 25.
Even being several preferred embodiments of passing through to be enumerated, the present invention describes, but these embodiment that the present invention is not limited to be enumerated.Though before enumerated and narrated specific embodiment, but apparently, do not broken away from the basis of disclosed spirit at other, the equivalence of being finished changes or modifies, and all should be included in claims of the present invention scope required for protection.In addition, all other on the basis that does not break away from disclosed spirit, other that finished be similar and approximate to be changed or modifies, and also all is included in the scope that claims of the present invention protect.Should explain scope of the present invention with the widest definition simultaneously, use and comprise all modifications and similar approach.
Claims (22)
1. manufacturing method of color filters comprises:
On substrate, form interlayer insulating film;
On this interlayer insulating film, form a plurality of sweep traces and a plurality of signal line, in order to define a plurality of picture elements zone and non-picture element zone;
Form hydrophobic surface in this a plurality of picture elements zone;
Form hydrophilic surface in this non-picture element zone; And
Utilize ink-jet method that coloured material is projeced into this a plurality of picture elements zone.
2. manufacturing method of color filters as claimed in claim 1, wherein these a plurality of sweep traces and this a plurality of signal line are vertical mutually.
3. manufacturing method of color filters as claimed in claim 1, wherein this substrate comprises the plurality of films transistor.
4. manufacturing method of color filters as claimed in claim 3, wherein these a plurality of sweep traces and this a plurality of signal line and this plurality of films transistor electrically connect.
5. manufacturing method of color filters as claimed in claim 1, wherein this coloured material is a hydrophobic material.
6. manufacturing method of color filters comprises:
On substrate, form interlayer insulating film;
On this interlayer insulating film, form a plurality of sweep traces and a plurality of signal line, in order to define a plurality of picture elements zone and non-picture element zone;
On this interlayer insulating film, form silicon dioxide layer;
Shine this silicon dioxide layer with ultraviolet ray;
On this silicon dioxide layer, form covering layer;
Shine this covering layer with ultraviolet ray;
Removal is positioned at this covering layer in this non-picture element zone to expose this silicon dioxide layer; And
Utilize ink-jet method that coloured material is projeced into this a plurality of picture elements zone.
7. manufacturing method of color filters as claimed in claim 6, wherein these a plurality of sweep traces and this a plurality of signal line are vertical mutually.
8. manufacturing method of color filters as claimed in claim 6, wherein this substrate comprises the plurality of films transistor.
9. manufacturing method of color filters as claimed in claim 8, wherein these a plurality of sweep traces and this a plurality of signal line and plurality of films transistor electrically connect.
10. manufacturing method of color filters as claimed in claim 6 wherein comprises with the step that this silicon dioxide layer is shone in ultraviolet ray:
Interarea side at this substrate is inserted first light shield; And
See through this first light shield and shine this silicon dioxide layer with ultraviolet ray.
11. manufacturing method of color filters as claimed in claim 10, wherein this first light shield is in the pattern tool opaqueness of this top, a plurality of picture elements zone.
12. manufacturing method of color filters as claimed in claim 6, wherein the material of this covering layer is selected from following group: polysilicon and amorphous silicon.
13. manufacturing method of color filters as claimed in claim 6 wherein comprises with the step that this covering layer is shone in ultraviolet ray:
Interarea side at this substrate is inserted second light shield; And
See through this second light shield and shine this covering layer with ultraviolet ray.
14. manufacturing method of color filters as claimed in claim 13, wherein this second light shield is in the pattern tool opaqueness of this top, non-picture element zone.
15. manufacturing method of color filters as claimed in claim 6, wherein this coloured material is a hydrophobic material.
16. a manufacturing method of color filters comprises:
On substrate, form interlayer insulating film;
On this interlayer insulating film, form a plurality of sweep traces and a plurality of signal line, in order to define a plurality of picture elements zone and non-picture element zone;
On this interlayer insulating film, form silicon dioxide layer;
On this silicon dioxide layer, form covering layer;
Removal is positioned at this covering layer in this non-picture element zone to expose this silicon dioxide layer;
Shine this substrate with ultraviolet ray; And
Utilize ink-jet method that coloured material is projeced into this a plurality of picture elements zone.
17. manufacturing method of color filters as claimed in claim 16, wherein these a plurality of sweep traces and this a plurality of signal line are vertical mutually.
18. manufacturing method of color filters as claimed in claim 16, wherein this substrate comprises the plurality of films transistor.
19. manufacturing method of color filters as claimed in claim 18, wherein these a plurality of sweep traces and this a plurality of signal line and this plurality of films transistor electrically connect.
20. manufacturing method of color filters as claimed in claim 16, wherein the material of this covering layer is selected from following group: polysilicon and amorphous silicon.
21. manufacturing method of color filters as claimed in claim 16 is wherein removed this covering layer that is positioned at this non-picture element zone and is comprised with the step of exposing this silicon dioxide layer:
On this covering layer, apply photoresist layer;
This photoresist layer of patterning; And
Etching is not by this covering layer that this photoresist layer covered.
22. manufacturing method of color filters as claimed in claim 16, wherein this coloured material is a hydrophobic material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03100780 CN1266496C (en) | 2003-01-17 | 2003-01-17 | Manufacturing meethod of colour filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03100780 CN1266496C (en) | 2003-01-17 | 2003-01-17 | Manufacturing meethod of colour filter |
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| CN1517727A CN1517727A (en) | 2004-08-04 |
| CN1266496C true CN1266496C (en) | 2006-07-26 |
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| CN 03100780 Expired - Fee Related CN1266496C (en) | 2003-01-17 | 2003-01-17 | Manufacturing meethod of colour filter |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006235146A (en) | 2005-02-24 | 2006-09-07 | Dainippon Screen Mfg Co Ltd | Manufacturing method of color filter |
| CN100399069C (en) * | 2005-05-25 | 2008-07-02 | 中华映管股份有限公司 | Method for manufacturing color optical filter |
| JP2008181067A (en) * | 2006-06-09 | 2008-08-07 | Fujifilm Corp | Jet ink for color filter, color filter, manufacturing method and displaying device for the color filter |
| KR101586673B1 (en) * | 2006-12-22 | 2016-01-20 | 엘지디스플레이 주식회사 | Organic light emitting display device and method for fabricating the same |
| CN101546008B (en) * | 2008-03-28 | 2010-12-01 | 中华映管股份有限公司 | Color filter and manufacturing method thereof |
| KR20100073356A (en) | 2008-12-23 | 2010-07-01 | 엘지디스플레이 주식회사 | Color electric phoretic display device and method for manufacturing the same |
| CN101840013B (en) * | 2010-04-30 | 2012-10-10 | 鸿富锦精密工业（深圳）有限公司 | Manufacture method of color filter |
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Granted publication date: 20060726 Termination date: 20180117 |