CN1252844A - In situ getter pump system and method - Google Patents

In situ getter pump system and method Download PDF

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Publication number
CN1252844A
CN1252844A CN98804253A CN98804253A CN1252844A CN 1252844 A CN1252844 A CN 1252844A CN 98804253 A CN98804253 A CN 98804253A CN 98804253 A CN98804253 A CN 98804253A CN 1252844 A CN1252844 A CN 1252844A
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Prior art keywords
pump
chamber
getter
temperature
purt
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CN98804253A
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达西H·洛里默
戈登P·克吕格尔
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Entegris GP Inc
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SAES Pure Gas Inc
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
    • F04B23/00—Pumping installations or systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/006—Processes utilising sub-atmospheric pressure; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
    • F04B37/00—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00
    • F04B37/02—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for evacuating by absorption or adsorption
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2257/00—Components to be removed
    • B01D2257/10—Single element gases other than halogens
    • B01D2257/108—Hydrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2257/00—Components to be removed
    • B01D2257/80—Water
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2258/00—Sources of waste gases
    • B01D2258/02—Other waste gases
    • B01D2258/0216—Other waste gases from CVD treatment or semi-conductor manufacturing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2259/00—Type of treatment
    • B01D2259/40—Further details for adsorption processes and devices
    • B01D2259/416—Further details for adsorption processes and devices involving cryogenic temperature treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/02—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
    • B01D53/04—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/02—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
    • B01D53/04—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
    • B01D53/0407—Constructional details of adsorbing systems
    • B01D53/0446—Means for feeding or distributing gases

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A wafer processing system including a processing chamber, a low pressure pump coupled to the processing chamber for pumping noble and non-noble gases, a valve mechanism coupling a source of noble gas to the processing chamber, an in situ getter pump disposed within the processing chamber which pumps certain non-noble gases during the flow of the noble gas into the chamber, and a processing mechanism for processing a wafer disposed within the processing chamber. Preferably, the in situ getter pump can be operated at a number of different temperatures to preferentially pump different species of gas at those temperatures. A gas analyzer is used to automatically control the temperature of the getter pump to control the species of gasses that are pumped from the chamber. An alternate embodiment of the invention includes an in situ getter pump additionally provided within the transfer chamber of the semiconductor manufacturing equipment.

Description

On-the-spot getter pump system and method
The present invention in a word is about ultra-high vacuum system, and is about on-the-spot aspirator pump used in the ultra-high vacuum system more specifically.
Have many ultrahigh vacuum(HHV) ranks for example 10 that require -7～10 -12The vacuum of the Torr order of magnitude.For example, the high vacuum physical machine resembles magnetic resonance acceleator and linear accelerator all requires 10 -8～10 -12The vacuum of the Torr order of magnitude, and in semi-conductor industry, also often need be in the semiconductor processing equipment near 10 -7～10 -9The ultrahigh vacuum(HHV) of Torr.
Adopt several pump serial or parallels in a chamber, to reach the ultrahigh vacuum(HHV) rank typically.Usually adopt machinery (for example oil) pump that the pressure in one chamber is dropped to about 30～50mTorr.They usually are referred to as " high pressure " pump, because their pump purt relatively high pressure gas, then, high or ultra vacuum pump system for example molecular pump, ionic pump, cryopump, turbo-pump etc. is used to pressure is reduced to and approaches 10 -7～10 -9Torr, they often are referred to as " low pressure " pump, because their pump purt low-pressure gases.To step-down time of a particular chamber with the capacity of chamber size, pump, by chamber to the conductive performance of pump and these factors of desirable final pressure calmly can by several minutes to a few hours to a couple of days.
In using, some ultrahigh vacuum(HHV) uses aspirator pump in combination with above-mentioned machinery, molecule and cryopump.Aspirator pump includes the getter (metal alloy) that has avidity with some non-rare gas element.For example, depend on the composition and the temperature of getter, aspirator pump is designed to preferentially certain non-rare gas element such as water vapor and the hydrogen of pump purt.
For example, the aspirator pump that provides of the SAES Getters of Italian Lainate lS.P.A has been installed in the particle accelerator for many years.This aspirator pump typically includes and is closed the getter that is combined in the stainless steel vessel.Aspirator pump can be by room temperature to about 450 ℃ of operations according to the gaseous species of desiring the pump purt, getter ingredient etc.Preferred getter to prior art SAES aspirator pump is ST707 TMGetter (this is that Zr-V-Fe contains gold), it is to be produced by the SAES Getters of Italian LainateS.P.A..Another such material is ST101 TMGetter alloy also can be obtained by the SAES Getters of S.P.A., is the Zr-Al alloy.These prior art aspirator pumps are configured in the high vacuum physical machine at them and can be seen as aspect inner and be " scene " pump.
Also proposed aspirator pump to be set for semiconductor processing equipment.For example the paper that is entitled as " the non-easy evaporator getter pump that is used for semiconductor processing equipment " of Briesacher etc. proposes before the several years, anyly adopts vent fan to come the application of the processed gas of purifying also all to can be on-the-spot purifying and for selecting pump purt impurity to adopt non-easy evaporator getter pump for carrying out semiconductor processes.
Above-mentioned Briesacher document illustration in sputtering system, using aspirator pump two kinds of possible running conditions are arranged.First kind is common pump (for example machinery and the cryopump) parallel running that aspirator pump is added to system and system.In this case, the operation of system does not change, and aspirator pump only is used as the partial pressure that service pump reduces some composition of entrap bubble in the chamber.Second kind of situation is that filled chamber reaches 3 * 10 -3To 6 * 10 -3The pressure range of Torr stops argon to flow into chamber, and sealed chamber.So soon aspirator pump is said to become argon is played " scene " cleaner.But, discuss as following, this pump really be not " on-the-spot " because active material not within the volume of treatment chamber.Japan Department of Electronics of Tohokv university has realized adopting such aspirator pump under Dr.Ohmi instructs realization treatment chamber for many years.
Disclosed the aspirator pump application that can combine with sputtering system in the Briesacher reference as a based semiconductor treatment facility.In the example of a typical sputtering system, rare gas element (being generally argon) is generated plasma body in pump purt one chamber.This plasma body makes argon ion quicken to impel material to be driven towards the target utmost point and deposits on the wafer surface.Aspirator pump is applicable to sputtering system very much.Because only desirable processing gas is not by the rare gas element of aspirator pump institute pump purt.Therefore, aspirator pump can be removed foreign gas and can not influenced flowing of the required rare gas element of sputter process by sputtering chamber.
But the Briesacher document is to adopt the pure theory analysis of the practicality of non-evaporator getter pump in semiconductor processing equipment basically.Therefore, disclosed this theoretical practical application seldom.And, " on-the-spot " illustrates the situation that adopts aspirator pump although the Briesacher paper is used term, and by can knowing and see in its explanation, aspirator pump regard as outside the chamber and with it " on-the-spot " only be when this chamber sealed and when not having argon to flow to chamber the aspirator pump internal capacity can be counted as the volume that is connected to chamber.But, it be not real " on-the-spot " because the aspirator pump surface is to be in one by the conductivity between chamber and the pump there being the chokes Road narrows of considerable restraint be connected within the volume of cavity volume.For example, Road narrows pump purt by pump may reduce conductivity 25% or bigger, then may reduce conductivity 60% or more by a pump purt of Road narrows with pump of thermoscreen (for preventing that effective parts are by the cryopump that is heated parts from treatment chamber).
The sputtering system that is used for the unicircuit manufacturing has that some prior art is still NM can be by on-the-spot aspirator pump institute enhanced service performance in the groove.A kind of such characteristic is to produce with sputtering equipment to move under a plurality of different pressures with different gaseous constituents.These characteristics for example say that at particle accelerator be non-existent in the Princeton University particle accelerator as the aforementioned, and they keep high vacuum usually.This feature is not discussed yet in aforesaid Briesacher reference.More specifically, industrial sputter machine usually bears three kinds of diverse environment.First kind of environment appearring when chamber is open to ambient atmosphere because of routine maintenance or repairing.Be subjected to the pollution of gas and impurity in the atmosphere in such environment lower chambers.Run on UHV condition as being lower than 10 when chamber during being depressured to " basic pressure " during chamber loading and unloading for example and before handling -7Second environment appears during Torr.At last, during the handling when the pressure of the argon gas body pressure in the sputtering chamber at several mTorr the 3rd environment appears.
In order between these different running environment, to circulate, a typical sputter chamber is coupled to a machinery (high pressure) pump and a cryopump (low-pressure pump).Mechanical pump is reduced to the pressure in this chamber near 30～50mTorr and utilizes cryopump (or other high-vacuum pumps for example turbo-pump) that the pressure in the chamber is reduced near 10 then -7～10 -9Torr.
Commercial being expected reduces to minimum with " transition " time between these different running environment.For example traditional mechanical pump and cryopump usually needs 600～700 minutes for reaching required vacuum levels when becoming the ultrahigh vacuum(HHV) situation by normal atmosphere.Therefore, the sputter chamber may need more than ten hour for receiving for the crystal of processing is ready after each routine maintenance or repairing.This may cause sputter machine thousands of or millions of " stop time " units in its whole of life.
Because to depend on cryopump more than mechanical pump for total pump " pumped down time ", a kind of terms of settlement increases the size of cryopump and to the conductivity of pump.So-called " conductivity " is meant the situation of a fluid (being gas in this case) when flowing to another volume (as pump chambers) by a volume (as treatment chamber).Conductivity is subject to the size in the aperture between two chambers of cross section of the Road narrows that are generally cryopump, and (directness) straight of distance between atom, molecule and the particle of desiring the pump purt and the interior effective surface of cryopump.Unfortunately, increase the size of cryopump and amount that conductivity can increase the argon that must flow to treatment chamber equally to support the sputter process.This has two side effects.The first, processing cost expends significantly increase because of the height of argon gas body.The second, will make pump saturated and need frequent " regeneration " (being captured material this moment is discharged by pump) rapidly by a large amount of argons of cryopump pump purt, and therefore cause series more stop time.As a result, the terms of settlement of this increase cryopump size does not have coml to be worth.
In a word wishing has a considerable low-temperature pump so that make the time durations between the regeneration period long as much as possible.But big cryopump has big Road narrows and big conductivity usually.In the prior art, a baffle plate that comprises for example one or more holes or other holes can be placed on the inlet of cryopump so that its conductivity is reduced receivable rank.On the other hand, can adopt to have less conductive less cryopump and need not baffle plate, maybe can adopt other limiting mechanisms.But, adopting the less cryopump of bleeding, the time durations between the regeneration period will be shorter.And the basic pressure of any will be higher than the big cryopump that employing does not add restriction in these answers.This is undesirable, because the low more chamber of basic pressure cleans more.
To another of the chamber problems of pump purt one sputter machine may solution be that an assisted cryogenic pump is set, cryopump had big conductivity and chamber is reduced pressure had less conductivity for pump purt chamber usefulness during handling to basic pressure and another cryopump this moment.But this solution also has its shortcoming.One, cryopump tend to sizable space because they need move liquid helium low temperature test and liquid nitrogen cryogenics experiment both sides.Therefore, the space that often the carries the baby increase assisted cryogenic pump around semiconductor manufacturing facility be inconvenient.Also because cryopump is very expensive product, this will be expensive solution.And less cryopump must be regenerated continually.Each cryopump also needs expensive and heavy valve and Controlling System.At last, chamber also must redesign mostly and adapt to two cryopumps.
Another possible solution is to adopt the baffle plate with variable-size eyelet.Although this is very attractive in theory, to the such baffle plate of big cryopump (for example have 8 inlet cryopumps) commercial be can not and make expensive and complicated mostly.And, may exist some impurity problem relevant with the variable orifice ocular structure.
Aspirator pump has their preferentially meaningful features of the certain gas of pump purt.For example, rely on the composition and the operating temperature thereof that change material (typically being metal alloy), selectively pump purt gas with various.For example aforementioned ST707 alloy is the many non-rare gas elementes of preferential pump purt when about 350 ℃ temperature, and when room temperature (about 25 ℃) preferential pump purt hydrogen.This feature of getter has been used to purify rare gas element and nitrogen, as here in conjunction with as a reference transfer SAES Pure Gas, disclosed among the United States Patent (USP) NO.5238469 (Aug, 24,1993) of the Briesachen of Inc. etc.But prior art is not disclosed in the application that operation comes the on-the-spot aspirator pump of preferential pump purt several species of gasses under several temperature.
The replication problem that is run in the prior art is that semiconductor manufacturing facility (or " system ") is because of safeguarding caused lengthening " stop time " periodically.For example, device manufacturers for example may need termly January once or " unloading " a kind of semiconductor manufacturing facility cleaning after using certain hours, check, replace parts or calibration.After the maintenance of execution cycle, system must prepare to be pumped down to enough low pressure before the application once more.This relates to the pressure that reduces the aforementioned processing chamber, but it also relates to and reduces the pressure of laying by the transfer chamber of the mechanical arm of treatment chamber loading and unloading wafer.
The transfer chamber of a semiconductor processing equipment must be or be lower than the pressure of treatment chamber.The past transfer chamber combines step-down by mechanical pump and cryopump, and it usually needs about about eight hours time to reduce the pressure of transfer chamber.The step-down time will pay a price, because system can not be used for carrying out the loss that each hour of semiconductor processes all may cause producing into ten million yuan.
Wafer processing process of the present invention includes treatment chamber, low-pressure pump and be placed in on-the-spot pump in the treatment chamber.This low-pressure pump is preferably one and is coupled to the cryopump of treatment chamber with throttle plate.One valve system is coupled to treatment chamber with inert gas source so that the indifferent gas physical efficiency flows to treatment chamber continuously and pumps this chamber with low-pressure pump.This on-the-spot pump that is preferably aspirator pump pumps chamber with non-rare gas element during rare gas element flows to, and any rare gas element of pump purt not basically.
Aspirator pump preferably includes one or more getter assembly that is equipped with well heater separately.Getter assembly can be in the operation of first temperature so that its certain gas of pump purt water vapor for example preferentially, another assembly then can run on one second temperature in case its can the pump purt one different gas hydrogen for example.On the other hand, also single component can be set, be heated first temperature and come preferential pump purt first gas, and then be heated second temperature with preferential pump purt second gas.Can adopt thermoshield to isolate between the table that is heated or cooled in getter and the chamber, can control getter therefrom temperature independently.
This wafer processing process preferably comprises a gas-analysis apparatus and an input of being coupled to chamber and is coupled to gas-analysis apparatus and exports the controller that is coupled to well heater.This automatic control of well heater make aspirator pump under first temperature, move can the pump purt first kind of gas, when second temperature, move aspirator pump with second kind of gas of pump purt after then being reduced to desired rank in the concentrated rank of first kind of gas.This makes aspirator pump to come preferential pump purt gas according to the gaseous constituent in the chamber.
Include sealable casing and be configured in on-the-spot getter pump system in this casing according to treatment chamber of the present invention, the latter can be in operation under not only temperature so that the different non-rare gas element of preferential pump purt can be in differing temps the time.This on-the-spot aspirator pump includes a temperature according to getter and is controlled to non-rare gas element of preferential pump purt (dehydrogenation is outer) or hydrogen.Best, this handles chamber and comprises that a gas-analysis apparatus and its input be coupled to the controller that well heater is coupled in gas-analysis apparatus and output.
The present invention comprises that also several are the method for handling wafer.More specifically, method according to processing wafer of the present invention includes step: wafer is inserted treatment chamber and this chamber of sealing, make rare gas element flow to this chamber and simultaneously with outside low-pressure pump with on-the-spot this chamber of pump pump purt of being configured in the non-rare gas element of pump purt in the chamber and the wafer in the treatment chamber and rare gas element continues to flow.Best, make before rare gas element flows to the step of chamber, this method include with outside low-pressure pump and on-the-spot pump simultaneously this chamber of pump purt to reach the step of basic pressure.This method preferably also includes according to analyzing composition and concentration that monitors gas in the chamber and the step of controlling the temperature of getter.On the other hand, the getter temperature also can be programmed mode or certain other non-feedback method is controlled.By this, the absorption characteristic of getter just can be conditioned the inner desirable impurity of pump purt inert gas flow.
In the another embodiment of the present invention, the aspirator pump that in the transfer chamber of semiconductor producing apparatus, is provided with.The internal capacity that this aspirator pump plays relative transfer chamber has very high conductive on-the-spot pumping action, and with existing cryopump parallel work-flow with the step-down transfer chamber.Because aspirator pump has very high-level efficiency at some gas of pump purt (particularly hydrogen), thereby system reduces total step-down time greatly.
The advantage of this invention is that the system and method that is provided can be compatible mutually with the various different operational conditionss of semiconductor manufacturing facility chamber.Dependence is provided with the transit time that on-the-spot aspirator pump can reduce semiconductor manufacturing facility greatly, thereby the step-down time that reduces equipment is thus improved conductivity and application performance.
Specifically, it can move the gas that one or more getter assembly comes pump purt preferentially to be selected by the sputtering system chamber primely under differing temps.Utilize the gas-analysis apparatus of the temperature of control getter assembly automatically, can greatly reduce the step-down time.
But also see that use primely can match on-the-spot aspirator pump with a cryopump.Because cryopump has very high-level efficiency to the rare gas element of pump purt resemble the argon and because aspirator pump mainly is the non-rare gas element of pump purt, so the operation of aspirator pump can interfere with or compromise rare gas element flowing in chamber interior.In addition because on-the-spot aspirator pump assists low wet air pump to reduce chamber pressure, so might adopt the low capacity cryopump or adopt very big baffled cryopump and still reach result during desirable low transit time simultaneously.
By reading following detailed description and studying various accompanying drawings and will know understanding these and other various advantages of the present invention.
To brief description of drawings
Fig. 1 is for illustrating the system diagram that includes according to the semiconductor processing device of on-the-spot getter pump system of the present invention;
Fig. 2 is the cross-sectional view of the cryopump baffle plate got along the line 2-2 of Fig. 1;
Fig. 3 is the side elevation view according to getter assembly of the present invention;
Fig. 3 a is the figure of the explanation single air suction element of the present invention got along the line 3a-3a of Fig. 3;
Fig. 4 is the skeleton diagram of on-the-spot another embodiment of getter pump system of the present invention;
Fig. 5 is another alternate embodiments of the on-the-spot getter pump system of the present invention;
Fig. 6 is according to the tonogram in the chamber of the present invention's first step-down process;
Fig. 7 is according to the tonogram in the chamber of the present invention's second step-down process;
Fig. 8 is the schema of explanation according to process of the present invention;
Fig. 9 is the schema that is described in more detail Fig. 8 step 162; With
Figure 10 comprises the system diagram according to the alternate embodiment of the present invention of the semiconductor processing equipment of on-the-spot getter pump system of the present invention in the transfer chamber that is configured in semiconductor processing equipment for explanation.
Wafer processing process shown in Fig. 1 10 includes first casing 12 that is used for robot wafer mechanical arm 14 and second casing 16 of definite treatment chamber 18.System 10 also includes mechanical pump 20, cryopump 22, and gas discharge system 24 is for the plasma generator 26 that generates plasma body be the controller 28 based on microprocessor of the operation of the most of processing of wafers 10 of control.The present invention also includes and comprises getter assembly 32, protective shield 33, controllable electrical power source 34, residual gas analysis device (RGA) 36 and based on the on-the-spot suction system pump 30 of the controller 38 of microprocessor.Wafer processing process 10 utilizes robot wafer mechanical arm 14 to handle the semi-conductor 40 that is placed in the chamber 18.
It is known being familiar with present technique field personage during the process details of first casing 12 and robot wafer mechanical arm 14.Casing 12 is determined to pass through the mechanical arm chamber 42 that slit valve 44 contacts with 46.This mechanical arm chamber is kept usually and is lower than 10 -7The ultrahigh vacuum(HHV) rank of Torr.The purpose of mechanical arm 14 is the slit valve 46 automatic wafers 40 arranging wafer 40 and taken away treated mistake in the back of finishing dealing with by slit valve 46 by chamber 18 in treatment chamber 18 by opening.Pressure in slit valve 46 is opened pre-treatment chamber 18 and mechanical arm chamber 42 is preferably roughly the same rank so that the eddy current minimum when slit valve is opened.During handling wafer 40, slit valve 46 is closed.The robot wafer mechanical arm 14 and the family of power and influence 44 and 46 are by central controller 28 controls.
Second casing 16 of determining treatment chamber 18 also is usual design.As first casing, it preferably by firm competent material for example stainless steel make.Except slit valve 46, a pair of valve 48 and 50 is coupled to chamber 18 with mechanical pump 20 and cryopump 22 separately.Reached normal atmosphere (for example in order to safeguard or repair) if chamber 18 has released, valve 48 is opened and mechanical pump is used to chamber is depressured to about 30mTorr.At this moment, valve 48 is closed and opens cryopump 50 and continue system is depressured to about 10 -9Torr.Best, aspirator pump 30 cooperates the operation operation of (for example side by side) cryopump 22.Can begin the processing of wafer 40 when chamber is low when causing " basic pressure " rank.Basic pressure is usually less than 10 -7Torr.
Certainly, above-mentioned " pumped down " process is the description through having simplified to a certain extent, and personnel will be understood that as the present technique field.More complete explanation as after.After chamber 18 was by mechanical pump 20 step-down partially, mechanical pump 20 was closed and is cut off by valve 48, and opened the valve 50 towards cryopump 22.Then chamber is discharged water vapor and other gases with heating tube (not shown) " oven dry " cause locular wall with by the internal component of the chamber 18 of cryopump 22 pump purts usually.Aspirator pump 30 also is " activated " by the high temperature that the getter with aspirator pump is heated to as 450 ℃.This activation of aspirator pump 30 is desired, because getter becomes " being passivated " when exposing to normal atmosphere; And between this active period can with the oven dry during overlaid.But, must not take place simultaneously during the oven dry and between active period.In case chamber is activated by oven dry and getter, inhale institute's pump 30 promptly be switched on 22 while of cryopump pump purt so that make chamber 18 be reduced to basic pressure rapidly.Can carry out semiconductor processes like this, will understand as those skilled in the art that scholar.
For starting the processing in the sputtering system, controller 28 impels valve 52 to open so that rare gas element (typically being argon) can flow to chamber 18 by gas source 54.Because cryopump 22 is still in operation, other byproduct quilt of argon gas and sputter process is by extracting out in the chamber 18.Valve 52 is regulated the argon that makes in the chamber 18 press to several mTorr, as be 1 * 10 -3To 6 * 10 -3MTorr.Because on-the-spot aspirator pump 30 is pump purt argon (it is a rare gas element) not, do not flow to chamber 18 so it can not influence argon basically, but 30 of aspirator pumps at argon gas by some non-rare gas element of pump purt between chamber 18 flow periods, as subsequently with discussed in detail.
As used herein, " on-the-spot aspirator pump " will refer to active principle that is effectively getter in fact be positioned in the aspirator pump that is in identical spatial volume inside with processed wafer.In fact, the aspirator pump chamber has become treatment chamber, otherwise or.Like this, the conductivity between on-the-spot getter and treatment chamber compared with the Road narrows by the family of power and influence, conduit, pump, passing anti-heat shielding etc., outside aspirator pump is coupled to chamber is very high.For example, employing has the of the present invention on-the-spot aspirator pump of anti-heat shielding 33, can reach 75% (typically surpass 85%), and only be 75% (typically being low to moderate 35%) of theoretical maximum pumping speed at most for the outside aspirator pump that is coupled to treatment chamber with family of power and influence and so on above the theoretical maximum pumping speed.Be noted that conductivity is directly related with pumping speed, pumping speed then is meant the relative percentage of the theoretical maximum pumping speed when not having any obstacle between the getter surface of supposition one given molecule and aspirator pump.
Therefore additional pass through aspirator pump two or the triple that pump Road narrows or valve Road narrows are coupled to treatment chamber that can obtain on pumping speed above prior art with on-the-spot pumping system of the present invention improves.Heat shielding 33 need not be prevented, higher theoretical maximum pumping speed can be realized.But, anti-heat shielding 33 preferably is set the pipe isolation is dried on the surface that is heated in getter and the chamber 18 as the aforementioned.Anti-heat shielding helps to reach regeneration temperature for getter by penetrating heat by the getter and the well heater reflected back width of cloth in addition.
In case the argon gas body flows into cryopump 22 by chamber 18, plasma generator 26 promptly is activated and facilitates (" triggering ") plasma discharge in chamber 18.There is several different methods in chamber, to generate plasma body, comprises radio frequency (RF) signal is added to sputter target, known as the person skilled in the art.Also as in the present technique field to know personnel known, plasma body generates the argon ion of positively charged, their bombardments are electronegative or be grounded sputter target and make the material shower drop on the wafer 40.The material type of making sputter depends on the composition of sputter target.Typically adopt similar aluminium, titanium and titanium one tungsten material deposition of aluminum, titanium and titanium one tungsten on wafer surface respectively of coming as sputter target.
Include getter assembly 32 according to on-the-spot getter pump system 30 of the present invention, shield 33, voltage source 34, RGA36 and controller 38.Total system some actual being configured in the chamber 18 only like this.But the significant part of system 30 that is getter assembly 32 are disposed in the chamber 18.Anti-heat shielding 33 also preferably is placed in this chamber and is used for the effective surface of getter assembly 32 and the surface that is heated in the chamber are isolated.If getter assembly is configured to or is shielded to prevent to be disturbed by the heating surface in the chamber then can economize and remove anti-heat shielding.Anti-heat shielding 33 can be one for example by the fixedly screen board of stainless steel, perhaps can be a movable screen board that is opened and closes under certain condition (for example opening chamber 18) at run duration.
Preferably suction system controller 38 is communicated by letter with sputtering system controller 28 by interface bus 55 so that on-the-spot pump is not for example being moved when being opened for maintenance and repair chamber 18 under the rough sledding.In addition, controller 28 capable of being combinedly becomes an one controller with 38, can understand as present technique field skilled staff.
Best, getter assembly 32 includes a well heater 56 that the temperature of getters in the getter assembly 32 can be selected.Thermocouple 58 is used to Temperature Feedback is provided so that can control the temperature of getter in the getter assembly 32 exactly.Voltage source 34 is coupled to the power supply that well heater 56 provides excitation well heater 56 through cable 60.This voltage source is variable, can be switched on or off, and perhaps can obtain a plurality of different voltage levels, perhaps can obtain the voltage level of a segment limit.Voltage source 34 can be by switching on or off or regulate its voltage by controller 38 by the signal that bus 62 sends.
Residual gas analysis device (RGA) 36 is coupled to treatment chamber 18 by transmitter 64 and cable 66.So-called " coupling " is meant that here analyzer 36 can receive about the composition of the gas in the chamber 18 and the information of concentration.For example, analyzer can be provided with and can couple light to chamber 18 by the photodetector of the plasma body in quartzy fenestra (not shown) the observation chamber 18, but in this preferred embodiment, this analyzer is actually by transmitter 64 and cable 66 and is coupled to chamber 18.
(East Syracuse NewYork) can obtain the suitable R 6A36 that trade mark is Transpector  by Leybold Inficon Inc.The effect of RGA26 is how will determine to exist in the chamber what gas and its concentration.This information is offered controller 38 via bus 68.
In service, controller 38 receives the information of relevant chamber 18 composition of gases within and concentration by bus 68 from RGA36.The Current Temperatures that it also receives about the getter in the getter assembly 32 by bus 70.Controller 38 determines whether the pump purt characteristic of getter assembly 32 for a change and the temperature of regulating getter in the getter assembly 32 then.For example say that if refer to that sand getter assembly 32 is just moving at high temperature if RGA36 determines the dense and thermopair 38 of hydrogen in the chamber 18, controller 38 just can send an information by bus 62 and impel voltage source 34 to turn-off to voltage source.This cuts off well heater 56 makes getter assembly 32 can be cooled to lesser temps.At a lower temperature, for example above-mentioned ST707 of getter and ST101 absorb hydrogen energetically, thereby promptly reduce the concentration of hydrogen in the chamber 18.In another example, very low if if RGA36 detects the temperature of the water vapor of high density and getter assembly 32, the thermal output that controller 38 promptly impels voltage source 34 to improve well heaters 56 is heated to 300～450 ℃ scope so that quickly and efficiently by chamber 18 pump purt water vapors with getter.
Referring to Fig. 2, cryopump 22 preferably is coupled to the family of power and influence 50 by a throttle plate 72 in addition.Explain the conductivity that these throttle plate 72 reduction treatment chamber 18 and low temperature axle off-gas pump are 22 as forward direction.For example say if cryopump has one 8 " outlet, then throttle plate 72 will be a bit larger tham 8 on the diameter " and will coordinate with gas and can flow to one or more hole 74 (or other hole such as slit) of cryopump 32 by it by treatment chamber 18.The conductivity of cryopump typically can be reduced about 50～70% by the design of selected throttle plate, and almost necessarily greater than 25%.This makes to utilize and needn't be born with enough low conductivity very continually again and make need not the considerable low-temperature pump that excessive argon gas current advances chamber 18 during handling.On the other hand, also can adopt much smaller cryopump 22 and not have a throttle plate 72, its generation do be cryopump at it since argon gas body institute must regenerate more continually when saturated.
Therefore on-the-spot getter pump system 30 has special relationship with cryopump 22.On-the-spot aspirator pump because must being limited, the conductivity of cryopump 22 can during handling, not need excessive argon (or other rare gas elementes), so all can be used to improve pumping speed during the step-down basic pressure and during process semiconductor wafers.Because on-the-spot aspirator pump is pump purt rare gas element such as argon not, so its ideal suits to be used to have to have a mind to limit conductive cryopump 22.
Disclose the preferred disposition that is used for getter assembly 32 among Fig. 3.Preferably, this getter assembly 32 includes a plurality of air suction elements 74 that are configured to the structure of spatial isolation.Subsidiary sectional view referring to Fig. 3 a, each air suction element all are set for the center configuration hole (figure) 76 of impression lengthening well heater 56.Preferably each air suction element 74 is the dish type that has the axial opening that forms center configuration hole 76 basically.Each air suction element 74 has a pair of relative limit 78 and 80, and can be a plurality of suitable getters any one, comprises (S.P.A, Lainate, Italy) getter of selling with trade mark ST707 or ST101 by SAESGetters.The best porous sintering of these air suction elements air suction element is as if transfer those that are disclosed in the U.S. Patent No. 5320496 of SAESGetters.The porous getter material is sold with trade mark ST172 by SAES Getters.The processing of porous getter has explanation in English Patent No.2077487, this patent transfers SAES Getters, and SPA is combined as reference at this.
Among the embodiment of Fig. 3, adjacent air suction element 74 for example air suction element 74a and 74b comprises apparent surface 82a and 82b.In the embodiments of figure 3, surperficial 82a is essentially the isoplanar with 82b and is parallel basically.So-called " isoplanar basically " allows although be meant the surface to be the plane in essence with planeness completely have not to be inconsistent also to a certain degree.So-called " substantially parallel " is meant that the surface parallels in essence, although there is some little deviation (for example ± 5 ° deviation) also can allow.Air suction element can have non-planar surfaces or uneven plane apparent surface in additional embodiments of the present invention.For example, apparent surface (as surperficial 82a and 82b) may define a pair of with about 5 ° or the littler crossing plane (even they are not to be entirely the plane) of angle.This can strengthen the absorptivity of selected gas under certain situation.
Well heater 56 can be arbitrary suitable heating unit.The prerequisite of well heater 56 is air suction element 84 to be heated to desirable operating temperature distribution.This distribution is preferably uniform, but along including gradient or discontinuity in the temperature of getter assembly length.
For example say if the ST707 getter is used, then wish well heater can run duration in 25～30 ℃ of scopes to air suction element 74 heating and can be heated to and be used for 450～500 ℃ of activated comparatively high tempss.But if utilize getter assembly pump purt hydrogen, well heater 56 needn't add to energy usually, because ST707 getter pump purt hydrogen well at room temperature.
However, even well heater 56 is not used to air suction element 74 is heated to their operating temperature, they also can be used to activate the getter in the air suction element 74.For example, the ST707 getter can be activated (regeneration) and ST101 can be activated by being heated to 600～700 ℃ by being heated to 450～500 ℃.But regeneration may be unwanted, is running stores because getter assembly 32 can only see as freely disposing of being replaced during routine maintenance.
Though well heater 56 is described as being the central shaft that supports air suction element 74, air suction element also can be supported by not heated axle support or available other modes.Well heater 56 can be separated with the support structure of user's air suction element 74 like this, for example is arranged in the radiator tube near air suction element.
As previously mentioned, be used to provide well heater 56 that few techniques is arranged.For example, can be provided with resistive, perception, or radiation heater.But in this preferred embodiment, well heater 56 is indicated in the patent of resistive heater example Manini etc.Well heater should be able to by around be the room temperature range internal heating to the operating temperature of getter at least.Best, well heater should be able to be heated to getter their activationary temperature.
Among Fig. 4, include sealable casing 86 and be configured in two getter assemblies 88 and 90 in the chamber of determining by casing 86 92 according to treatment chamber 84 of the present invention.System 84 also includes RGA90 and microprocessor control system 92.Certainly, as described under the situation of controller and controller 92, the function of controller can be realized by many electric or electronic systems that are equal to.For example, controller can include mimic channel, discrete digital logic, microprocessor, small-size computer etc.System 84 also includes a pair of voltage source 94 and 96.Casing 86 can be arbitrary usual design, though it is processed into by soldering stainless steel usually.Casing 86 preferably is equipped with slit valve (not shown) or the similarity piece that makes workpiece to insert easily and taken away by chamber 92.When sealed originally, casing 86 is isolated chamber 92 and surrounding environment.
Two or more (promptly a plurality of) getter assemblies such as getter assembly 88 and 90 are set in the chamber 92 for where many reasons are arranged.For example, these two on-the- spot getter assemblies 88 and 90 simply parallel running the capacity of on-the-spot aspirator pump and pumping speed are doubled.In addition, getter assembly 88 also can be made and/or be moved with different operating temperatures with 90 by different getters.For example, the preferably most of non-rare gas element (outside the dehydrogenation) of pump purt be made and be moved to getter assembly 88 can with the ST707 getter under 300～400 ℃, and the then available ST101 getter of getter assembly 90 is made and remained room temperature so that preferential pump purt hydrogen.Therefore, utilize two getter assemblies to combine the very large-scale non-rare gas element of pump purt.
Best, system 84 is controlled with closed-loop fashion, and promptly it moves under feedback control.Thermopair (or equivalent) 98 and 100 is used to monitor respectively the temperature of getter assembly 88 and 90, and transmitter 102 is used for the composition and the concentration of gases in the detection chambers 92 by RGA circuit 91.Controller 93 utilizes the input of RGA circuit 91 and thermopair 98 and 100 to produce respectively the voltage source 94 of well heater 104 that control is coupled to getter assembly 88 and 90 separately and 106 and 96 signal.
Among Fig. 5, treatment system 108 includes salable casing 110 and three getter assemblies 114,116 and 118 of definition chamber 112.Should be pointed out that each getter assembly 114～118 all can control independently, and may have different sizes.For example, getter assembly 114 can include the ST101 getter and can keep heating to keep the next preferential pump purt hydrogen of room temperature, getter assembly 116 can include temperature that the ST707 getter is heated to 300～450 ℃ and come non-rare gas element of pump purt and getter assembly 118 can include the other getter that operates in other temperature to supply getter assembly 114 and 116 pump purt abilities.In this example, getter assembly 114,116 and well heater 120,122 and 124 each free temperature regulator 128,130 and 132 of 118 are coupled to voltage source 126 respectively.But controller 128～132 respectively well heater 120～124 is remained on as detect by thermocouple 134,136 and 138 desirable fixed temperature.Therefore, although be used for the temperature regulator of each getter assembly 114～118 is that closed loop is a feedback system, composition and concentration aspect system 108 with regard to gas in the chamber 112 then are not that closed loop is a feedback system, because getter assembly 114-118 will move under same temperature all the time.In any case, for the process of many data proofs, getter assembly and their operating parameter can be fixed to operation well under most of normal circumstancess.
Among Fig. 6, illustrate one and move the preferred method of on-the-spot aspirator pump according to the present invention.Represent pressure P in the chamber along the longitudinal axis among this figure, and represent time T along transverse axis.Article one, line 140 illustrates the dividing potential drop of time dependent water vapor in the chambers, and the dividing potential drop of time dependent hydrogen in the second line 142 explanation chambers.Water vapor 140 generates and combination pressure 144 with being combined in the treatment chamber of hydrogen 142 in this example.
With reference to the diagram of Fig. 6 illustrate use after the activation and between pressure reducing period single getter assembly for example the getter assembly 32 of Fig. 1 as the process of on-the-spot aspirator pump.The figure that should be pointed out that Fig. 6 only just is used for illustrative purposes, and actual partial pressure curves will be different.To suppose that in this example getter assembly 32 includes ST707 type getter, it is being heated to 300～450 ℃ of temperature ranges, is for example very well absorbing water vapor (H about 350 ℃ the time 20).ST707 absorbs hydrogen under the room temperature about 25 ℃ well.In this example, RGA 36 detects high concentration water's steam at time t=0, and controller 38 makes voltage source 34 connect well heater getter assembly 32 is heated to 350 ℃.This makes water vapor concentration descend very fast and is removed by chamber substantially until time t=T1 water vapor.ST707 less absorbs hydrogen when high temperature but the hydrogen dividing potential drop remains unchanged substantially.In case the very low and hydrogen concentration 42 of the water vapor concentration of RGA 36 in time t=T1 detects chamber 18 is very high, system 38 makes voltage source 34 turn-off, and disconnects well heater and getter assembly 32 can be cooled off and begins to absorb hydrogen.Thereby and Fig. 6 in represent that the single getter assembly that runs on two differing tempss can be removed non-rare gas elementes and unlikely interference rare gas element flowing by chamber by chamber 18 quickly and effectively.
Among Fig. 7, illustrate for example operation of indicated system 84 among Fig. 4 of system with a plurality of getter assemblies.Should point out once more that the figure of Fig. 7 only just is used for illustration purpose and actual partial pressure curves will be different.In this example, represent with curve 146 by the dividing potential drop that water vapor causes, and represent with line 148 by the dividing potential drop that hydrogen produces.Total pressure profiles in this routine middle chamber 92 is by 150 expressions.Because RGA91 detects water vapor and hydrogen both sides' concentration, MPU 93 impels voltage source 94 to connect and voltage source 96 disconnects.This makes getter assembly 88 be heated to about 350 ℃ of temperature, thus by chamber 92 pump purt water vapor promptly, assembly 90 can be moved under about surrounding temperature and can make it by chamber 92 rapid pump purt hydrogen.
Will be noted that multi-component system can reach bigger pumping speed owing to bigger surface area with owing to possibility while this fact of pump purt multiple gases.But how on-the-spot getter assembly makes system expensive more than the single suction pneumatic module system of initial description.
Among Fig. 8, handle the process 152 of wafer in step 154 beginning according to the present invention, and in step 156, an on-the-spot aspirator pump that combines with a cryopump is energized to produce basic pressure in chamber.Then wafer is inserted chamber and with cavity seal in step 158.Begin to flow into chamber and in step 162 on-the-spot pump system of running and cryopump, make the argon gas body continue to flow and generate plasma body at step 160 argon.In step 164, plasma body stops to be cut off so that on-the-spot pump system and cryogenic pump system can reduce the pressure in the chamber with the argon gas body below.Process stops to be cut off so that on-the-spot pump system and cryogenic pump system can reduce the pressure in the chamber with the argon gas body in step 168 by the chamber treated wafer of taking-up in step 166 then.Process finishes in step 168 by the chamber treated wafer of taking-up in step 166 then.
Explanation is corresponding to the preferred process 162 of the step 162 of Fig. 8 among Fig. 9.Process 162 is monitored the composition and the concentration of gas and chamber in 170 beginnings in step 172.Then inspire the operating parameter of inferring the on-the-spot aspirator pump of adjustment according to this monitoring step and certain process in step 174.This this journey 162 finishes 176.
Should point out that process 162 illustrated in fig. 9 is that closed loop is the embodiment of feedback procedure.Certainly, illustrated open loop process also is feasible and may be preferable for some application.The operating parameter of related on-the-spot aspirator pump can comprise one or more getter assembly of activation in the step 174, changes temperature of getter assembly or the like.The inspiration of process infers that being is the thumb rule that this process of optimization is implemented by system designer.For example say that the temperature that system designer may be determined to have on the getter assembly of ST707 getter should drop to surrounding temperature by 350 after the time limit when the dividing potential drop when water vapor arrives certain rank or at preset time.
Figure 10 illustrates one according to alternative system 10 ' of the present invention.Under identical with the same element of Fig. 1 system 10 basically condition of the element of this system 10 ', adopt same reference signs and in illustrative system 10 ', will no longer be discussed.
It should be noted among Figure 10, be provided with auxiliary on-the-spot pump 178 in the mechanical arm chamber 42 of system 10 ' (or " transfer chamber ").Be the pressure of " reducing (bleeding) " transfer chamber 42, at first utilize mechanical pump 180 roughly transfer chamber 42 pump purts to be arrived about 30～50mTorr.On-the-spot then aspirator pump 178 preferably and cryopump 182 move step-down transfer chamber 42 simultaneously.This " walk abreast " of on-the-spot aspirator pump 178 and cryopump 182 thus the pump purt greatly reduces the step-down time of transfer chamber 42 makes system 10 ' can become rapidlyer afterwards and can move for the maintenance of doing the cycle or because of other reasons quilt " dismounting ".
More particularly, during brownout operation, the slit valve 44 and 46 of transfer chamber 42 is closed sealed chamber 42, and valve 184 is opened mechanical pump 180 is coupled to transfer chamber 42.By mechanical pump 180 rough post pumpings, valve 184 is closed and valve 186 is opened cryopump 182 is coupled to transfer chamber 42.Aspirator pump 178 and cryopump 182 move simultaneously and come step-down chamber 42 quickly then.When this chamber reached elementary operation pressure, as being detected by chamber 42 pressure sensors 188, valve 186 promptly was closed, and transfer chamber 42 can its normal way operation.
Cryopump 182 need not to be provided with and resembles the such flow-stopping plate of flow-stopping plate 72, because owing to argon pump purt not being advanced the conductivity that transfer chamber 42 need not throttle low temperature pump 182.But cryopump 182 preferably is provided with and is used to protect cryopump 182 inside and exempts from because of wisp and sink into the barrier 190 that the cryopump hole is damaged.
Aspirator pump 178 is similar to aforesaid aspirator pump in design.Aspirator pump 178 preferably by a plurality of aforesaid can (SpA of Lainate, the porous suction disk that Italy) obtains constitutes by SAES Getters.Suction disk is preferably supported by the metal bar that helps the heat distribution between the suction disk (for example being made by stainless steel).
In the on-the-spot aspirator pump of transfer chamber (relative), can need not thermoshield with the on-the-spot sucking pump of aforesaid treatment chamber.This is because in a word can not make the getter superheated be heated the surface in the phase at pumping main in the transfer chamber 42.But, preferably for example say by the heat reflector of making through the stainless steel of polishing 192 to be arranged near the of suction disk so that make that the heat energy from well heater 194 may be reflected on the suction disk in the regeneration period of suction disk with one.But it is high as much as possible to wish to be configured to make the conductivity of aspirator pump 178 to keep heat reflector 192, also is at least 75% conductivity with respect to chamber 42.
Well heater 194 is preferably the radiation silica tube that is placed near air suction element.Therefore well heater 194 is by coming the heated getter element by heat reflector 192 radiation reflected by direct radiation with by the thermal conduction by metallic support rod.On the other hand, well heater 194 also can be one or to be disposed in suction disk contiguous or be set at the resistive heater of the bar inside that keeps suction disk.
The temperature of aspirator pump 178 is preferably controlled by closed feedback loop.More specifically, one well heater 194 is provided the variable voltage source 198 of electric power based on controller 196 control of microprocessor.Temperature sensor 200 provides temperature data to controller 196.Controller 196 communicates with central controller 28 so that information is provided and receives order by central controller to central controller, promptly by order that system software generated.
Should be pointed out that about the on-the-spot pump 192 of transfer chamber and described a simple Controlling System.But 32 illustrated complicated systems also can be applied to the on-the-spot pump of transfer chamber about the on-the-spot pump of treatment chamber.Thereby will be understood that, the on-the-spot pump of transfer chamber can be facilitated in operation under a plurality of temperature in case under these many temperature preferential pump purt gas with various, and can be by the feedback loop control that includes gas-analysis apparatus.
Be also pointed out that a transmission cavity realization aspirator pump 178 also can include or a plurality of aspirator pumps of same or dissimilar getters, as discussing according to the on-the-spot aspirator pump of treatment chamber.Therefore the discussion about so many pump configurations also can be applicable to the on-the-spot aspirator pump of transfer chamber here.
Though the present invention is described at several preferred embodiments, exist the multiple variant, transplanting and the equivalent that belong in this invention scope.Also should point out, may have the alternative route that realizes process of the present invention and equipment both sides.For example, although disclosed ST707 and ST101 getter during above-mentioned discussion the preferred embodiments of the present invention, those skilled in the art that scholar will be understood that other getter and compound are also applicable to the present invention.Equally, mainly described cryopump, will be understood that just molecular pump, ionic pump, turbo-pump etc. also can or be carried out utilization comparably though be relevant to the present invention.
Therefore following claims that desired is should be looked at as and comprise all these variants, transplanting and the Equivalent that belongs within spirit of the present invention and the scope.

Claims (31)

1, a kind of wafer processing process comprises:
Transfer chamber;
By the low-pressure pump of selecting in the group that includes molecular pump, ionic pump, cryopump and turbo-pump, described low-pressure pump is coupled to described transfer chamber;
Be configured in the on-the-spot aspirator pump of described transfer chamber, wherein said aspirator pump includes getter assembly and is configured to approach described getter assembly so that the heated well heater of described getter assembly energy;
Be disposed at temperature sensor near described aspirator pump; With
Be coupled to the temperature controlling device that described well heater is controlled in described temperature sensor and operation selectively.
2, wafer processing process described in the claim 1 is characterized in that also comprising the mechanical pump that is coupled to described transfer chamber.
3, wafer processing process described in the claim 1 is characterized in that first temperature by the described getter assembly of described controller control is selected to the outer at least a non-rare gas element of pump purt dehydrogenation and second temperature of described getter assembly is selected to pump purt hydrogen.
4, wafer processing process described in the claim 3 is characterized in that described well heater can also be heated to described getter assembly one the 3rd temperature with the described assembly of regenerating.
5, wafer processing process described in the claim 3, the described getter of its feature comprise Zr-Al and described first temperature in 300～400 ℃ scope, and described second temperature is in 25～100 ℃ scope.
6, wafer processing process described in the claim 1 is characterized in that described aspirator pump includes a plurality of getter assemblies.
7, wafer processing process described in the claim 6 is characterized in that described a plurality of getter assembly mainly includes the getter of same type.
8, wafer processing process described in the claim 6 is characterized in that at least two described getter assemblies include at least two dissimilar getters.
9, wafer processing process described in the claim 6 is characterized in that described aspirator pump includes the temperature that a plurality of well heaters that are associated with the described getter assembly of respective numbers are controlled described respective numbers getter assembly.
10, wafer processing process comprises:
Transfer chamber;
Be configured in the described transfer chamber and be provided with the on-the-spot getter pump system of well heater so that described pump system can operate in not only under the temperature, make different non-indifferent gas physical efficiencys when differing temps by preferential pump purt; With
Be used to transmit the robot transferring arm that wafer passes in and out described transfer chamber.
11, wafer processing process described in the claim 10 is characterized in that also comprising:
Be coupled to the gas-analysis apparatus of described chamber; With
Have the input of being coupled to described gas-analysis apparatus and be coupled to the controller of the output of described well heater,
Control described temperature according to the analysis of mixed gas in the described chamber in view of the above.
12, wafer processing process described in the claim 11 is characterized in that selecting first temperature to come at least a non-rare gas element outside the dehydrogenation of pump purt and select second temperature to come pump purt hydrogen.
13, wafer processing process described in the claim 12 is characterized in that described getter comprises Zr-Al and described first temperature in 300～400 ℃ scope, and described second temperature is in 25～100 ℃ scope.
14, wafer processing process described in the claim 10 is characterized in that described pump system is provided with a plurality of getter assemblies, and wherein each all is associated with a well heater, so that the temperature of described a plurality of getter assemblies can be controlled.
15, wafer processing process described in the claim 10 is characterized in that also comprising:
Be coupled to the gas-analysis apparatus of described chamber; With
Have the input of being coupled to described gas-analysis apparatus and be coupled to the controller of the output of described a plurality of well heaters,
The described temperature of described getter assembly is according to the analysis of mixed gas in the described chamber and controlled in view of the above.
16, treatment system comprises:
Sealable casing; With
Be placed in on-the-spot getter pump system getter, that can under not only temperature, move that has in the described casing, make can be when described casing is sealed at the different non-rare gas element of pump purt under the differing temps.
17, treatment system described in the claim 16 is characterized in that described on-the-spot aspirator pump includes well heater and selects first temperature to come the outer at least a non-rare gas element of pump purt dehydrogenation, selects second temperature to come pump purt hydrogen.
18. treatment system described in the claim 17 is characterized in that also comprising:
Be coupled to the gas-analysis apparatus of described chamber; With
Have the input of being coupled to described gas-analysis apparatus and be coupled to the controller of the output of described well heater,
Described in view of the above temperature is controlled according to the analysis of mixed gas in the described chamber by described well heater.
19. treatment system described in the claim 18 is characterized in that described pump system includes a plurality of getter assemblies, wherein at least two described getter assemblies can be remained on different temperature by described well heater.
20, on-the-spot getter pump module comprises:
Separated by the space so that the air suction element that adjacent air suction element does not fit, wherein each air suction element is provided with the hole that is positioned at central authorities;
Be configured hole by described air suction element to support the metallic support rod of described air suction element; With
Be configured in radiation quartz lamp heater, be used for the described air suction element of radiation heating and rely on thermal conduction to come the described air suction element of conductivity ground heating by described support bar near described air suction element and described metallic support rod.
21, on-the-spot getter pump module described in the claim 20 is characterized in that each air suction element is disk-shaped basically, has to form the described axis hole that is positioned at the hole of central authorities.
22, on-the-spot getter pump module described in the claim 20 is characterized in that each air suction element has a pair of relative face.
23, the described on-the-spot getter pump module in the claim 20 is characterized in that also comprising being arranged to by the heat reflectivity surface of described quartz lamp towards described air suction element reflected radiation energy.
24, handle the method for wafer, comprise step:
The sealing transfer chamber;
With the outer low pressure pump of pump purt rare gas element with the described transfer chamber of on-the-spot aspirator pump pump purt in the described chamber of being configured in of the non-rare gas element of pump purt, described on-the-spot pump has its pumping speed is at least its theoretical maximum pumping speed with respect to chamber 75% active component;
Semiconductor wafer is sent at least one treatment chamber by described transfer chamber; With
Steps necessary as the working integrated circuit device is handled described wafer in described at least one treatment chamber.
25, a kind of method of pump purt chamber comprises step:
Sealed enclosure; With
With the described casing of on-the-spot getter pump system pump purt in the described casing of being configured in that can under more than a temperature, move, so that can be when casing is sealed at the different non-rare gas element of pump purt under the differing temps.
26, the method for the purt of pump described in the claim 25 chamber is characterized in that also comprising step:
Control the temperature of described getter pump system and come at least a gas of preferential pump purt.
27, the method for the purt of pump described in the claim 26 chamber is characterized in that described controlled step is a closed loop procedure.
28. the method for the purt of pump described in the claim 26 one chamber is characterized in that described controlled step is an open loop process.
29, the method for the purt of pump described in the claim 26 chamber is characterized in that also comprising step:
Monitor the composition of the gas in the described chamber and according to the temperature of the described getter pump system of analysis and Control of described composition.
30. the method for the purt of pump described in the claim 29 chamber is characterized in that described getter pump system comprises at least two getter assemblies, wherein said controlled temperature step can be controlled described two inter-module relative temperatures.
31, wafer processing process is characterized in that comprising:
Treatment chamber;
Be configured in the on-the-spot aspirator pump of treatment chamber in the described treatment chamber;
Transfer chamber;
Being configured in being used in the described transfer chamber transmits the come in and go out robot arm of described treatment chamber of wafer;
Be configured in the on-the-spot aspirator pump of transfer chamber in the described transfer chamber; With
Be used to handle the treatment system that is placed in the wafer in the described treatment chamber.
CN98804253A 1997-04-18 1998-04-15 In situ getter pump system and method Pending CN1252844A (en)

Applications Claiming Priority (2)

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US84417897A 1997-04-18 1997-04-18
US08/844,178 1997-04-18

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CN1252844A true CN1252844A (en) 2000-05-10

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KR (1) KR20010006278A (en)
CN (1) CN1252844A (en)
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CN114318518A (en) * 2021-12-31 2022-04-12 季华实验室 Epitaxial furnace hydrogen absorption system and method, electronic equipment and storage medium

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CN114318518A (en) * 2021-12-31 2022-04-12 季华实验室 Epitaxial furnace hydrogen absorption system and method, electronic equipment and storage medium

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JP2001524872A (en) 2001-12-04
KR20010006278A (en) 2001-01-26
EP1012478A2 (en) 2000-06-28
WO1998048168A3 (en) 2000-02-24
WO1998048168A2 (en) 1998-10-29

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