CN1249876C - Failure protector for parallel power supply - Google Patents
Failure protector for parallel power supply Download PDFInfo
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- CN1249876C CN1249876C CN 01119719 CN01119719A CN1249876C CN 1249876 C CN1249876 C CN 1249876C CN 01119719 CN01119719 CN 01119719 CN 01119719 A CN01119719 A CN 01119719A CN 1249876 C CN1249876 C CN 1249876C
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Abstract
The present invention relates to a failure protector applied to a parallel power supply, which comprises a field effect transistor (FET) and a control circuit, wherein the field effect transistor (FET) is coupled between the output voltage end of the parallel power supply and the input voltage end of an external load of the parallel power supply, and the control circuit is used for rapidly and accurately controlling the field effect transistor. When a forward current flows to the external load of the parallel power supply from the output voltage end of the parallel power supply, the field effect transistor is driven to be switched on. When the parallel power supply can not provide a forward output current, the field effect transistor is driven to be shut down to prevent a negative current from reflowing to the parallel power supply.
Description
The present invention relates to a kind of abating protection device that is applied to parallel power supply, flow into parallel power supply from the outside of parallel power supply in order to prevent a reverse current.
For the power output and the reliability of promoting power system, the power supply unit more than two or two is done the mode of using in parallel be still effective method.Power system as shown in Figure 1, but its compose in parallel mutually by a voltage bus (voltage bus) 13 by two parallel power supplies 11 and 12, and provide the power supply output of a composite type.The topmost advantage of the power system design of this kind is, just in case wherein power supply unit breaks down or can't output voltage the time, and an other power supply constantly, and do not have influence on the work of other circuit.
Yet, when the power supply unit more than two or two is in parallel, if wherein the output voltage benchmark position of a power supply unit is lower than the output voltage benchmark position of other power supply unit or when wherein a power supply unit breaks down, just can produce undesired reverse current (reverse current) and flow into defective power supply unit, make defective power supply unit become the load of other power supply unit (load) from voltage bus 13.For power supply unit, therefore the electric energy of itself output having become load causes suitable severe impairment to power system.
The situation that flows to power supply unit for fear of reverse current produces, just need a barrier means (isolation device) cross-over connection between the voltage output end and voltage bus 13 of power supply unit, in order to separate power supply unit and undesired reverse current.In Fig. 1, diode 14 and 15 is to be usually used in the parallel power supply in order to completely cut off the barrier means of reverse current.Many institutes are known, and diode is the rectifier stack of unidirectional conducting, and its characteristic is for if when a forward bias puts on diode, diode current flow, and a forward current is from the flow through negative pole of diode of the positive pole of diode; Otherwise when putting on diode as if a reverse biased, diode is closed.Therefore, this unidirectional conducting rectifier stack of diode just is highly suitable in the design of parallel power supply, as preventing that reverse current is back to the circuit unit of power supply unit.
Yet, adopt diode to prevent the design of reverse current, but exist the shortcoming that some are difficult to overcome.Its topmost shortcoming is, when electric current is flowed through the P-N knot face (P-Njunction) of diode, can produce sizable power loss.Therefore when the circuit design of reality, replace diode as preventing that reverse current from flowing into the circuit unit of power supply unit with a transistor switch as a field-effect transistor (FET), can reduce the power loss of circuit, promote the whole efficiency of power supply unit.
However, FET is a kind of circuit unit of two-way admittance, and its conducting is not simple as the control diode with the control of closing.Therefore if adopt FET as preventing that reverse current from flowing into the circuit unit of power supply unit, just need to design the rapid and control circuit that accuracy is high of a cover running speed and control FET conducting when power supply unit output forward current, and when reverse current is back to power supply unit, close.
Therefore, the object of the present invention is to provide a kind of abating protection device that is applied to parallel power supply, it prevents rapidly and accurately that in the mode that consumes less power the reverse current from flowing into power supply unit.
Another object of the present invention is to provide the device of the reverse-current protection in a kind of power system; this power system is made up of by voltage bus institute in parallel mutually several power supply units; when power supply unit wherein breaks down or exports lower voltage reference position, produce reverse current and flow into defective power supply unit in order to avoiding.
According to first preferred embodiment of the present invention, a kind of is to comprise a transistor switch in order to protect a power supply unit to avoid a reverse current from the device that a load flows into power supply unit, the one end is connected in an output voltage terminal of this power supply unit, and its other end is connected in the Input voltage terminal of this load; One transistor control circuit, be electrically connected on and change transistor switch, in order to when this output voltage terminal of this power supply unit flows to this load, driving this transistor switch conducting, and, a reverse current closes when driving this transistor switch from this load flow during to this output voltage terminal of this power supply unit when a forward current.
This transistor switch comprises a field-effect transistor (FET).Above-mentioned transistor control circuit comprises a voltage comparator circuit, be electrically connected on this Voltage Supply Device and this load, this comparator is in order to the relatively output voltage of this power supply unit and the input voltage of this load, the output voltage of this power supply unit and the input voltage of this load relatively after, send one first control signal; An and task comparator circuit, be electrically connected on this power supply unit, this comparator is in order to the voltage and a reference voltage of the output task (ourput duty) of the transformer of relatively representing this power supply unit, and because of the voltage of the output task of representing transformer and this reference voltage relatively after, send one second control signal; An and transistor driver circuit, be electrically connected on this voltage comparator circuit and this task comparator circuit, disjunction operation (logic AND operation) in order to the state of the state of carrying out this first control signal and this second control signal, and the running that produces a control signal oxide-semiconductor control transistors switch because of the output of this disjunction operation, in order to prevent reverse current from this load flow to this power supply unit.
In addition, according to first preferred embodiment of the present invention, this transistor control circuit also comprises an auxiliary circuit, is electrically connected on this voltage comparator circuit and transistor driver circuit, flows to this power supply unit when this power supply unit short circuit in order to avoid a reverse current.This auxiliary circuit comprises a memory element as an electric capacity, in order to remembering the output voltage benchmark position of this power supply unit, and when this power supply unit short circuit, discharges the inverting input of its stored energy to the comparator of this voltage comparator circuit; An and switch module, as a diode, be electrically connected on this memory element, provide a discharge loop to give the anti-phase input end that this memory element is discharged to the comparator of this voltage comparator circuit in order to the control that is subjected to this memory element, close this transistor switch in order to the comparator that drives this voltage comparator circuit.
According to second preferred embodiment of the present invention, the another kind of circuit design layout of above-mentioned auxiliary circuit can comprise a memory element as an electric capacity, in order to remember the output voltage benchmark position of this power supply unit, and when this power supply unit opens circuit, the energy that release is stored, an and threshold values driven unit, a bipolar junction transistors (BJT) for example, be electrically connected on this memory element, in order to accept the energy that this memory element discharges and drive this transistor switch, when this power supply unit short circuit, close this transistor switch, flow to this power supply unit to avoid reverse current.
Conception according to second aspect present invention, a kind of device that is applied to a power system, wherein this power system is made up of by a voltage bus is in parallel mutually several power supply units, and this device is to be electrically connected between the output voltage terminal and this voltage bus of one of them power supply unit, for avoiding a reverse current to flow into this power supply unit from this voltage bus, it comprises a field-effect transistor (FET), the one end is connected in an output voltage terminal of this power supply unit, and its other end is connected in an Input voltage terminal of this voltage bus, one voltage comparator circuit, this comparator is in order to relatively an output voltage of this power supply unit and an input voltage of this voltage bus, the output voltage of this power supply unit and the input voltage of this voltage bus relatively after, send one first control signal; An and task comparator circuit, this comparator is in order to the voltage and a reference voltage of the output task (output duty) of the transformer of relatively representing power supply unit, after representing the voltage of output task of transformer and this reference voltage relatively, send one second control signal; An and transistor driver circuit, disjunction operation (logic AND operation) in order to the state of the state of carrying out this first control signal and this second control signal, and, flow to power supply unit from voltage bus to prevent reverse current because of the output of this disjunction operation produces the running that a control signal is controlled this field-effect transistor.
According to above-mentioned conception, the present invention also comprises an auxiliary circuit in order to avoid reverse current from the device that this voltage bus flows into this power supply unit, be electrically connected on this voltage comparator circuit and this transistor driver circuit, it comprises a memory element as an electric capacity, in order to remember the output voltage benchmark position of this power supply unit, and when this power supply unit short circuit, discharge the inverting input of its stored energy to the comparator of this voltage comparator circuit, an and switch module, as a diode, be electrically connected on this memory element, provide a discharge loop to give the inverting input that this memory element is discharged to the comparator of this voltage comparator circuit in order to the control that is subjected to this memory element, close this field-effect transistor with the comparator that drives this voltage comparator circuit.
The another kind of circuit design layout of this auxiliary circuit can be made up of a memory element and a threshold values driven unit.This memory element is as an electric capacity, in order to remembering the output voltage benchmark position of this power supply unit, and when this power supply unit short circuit, discharges its stored energy.This threshold values driven unit is as a bipolar transistor (BJT), be electrically connected on this memory element in order to the energy accepting this memory element and discharge and drive this transistor switch, when this power supply unit short circuit, close this field-effect transistor and avoid reverse current to flow to this power supply unit.
In order further to understand advantage of the present invention and feature, elaborate below in conjunction with embodiment and accompanying drawing.
Fig. 1 is the circuit box schematic diagram of the power system of being made up of parallel power supply commonly used;
Fig. 2 is the circuit box schematic diagram of the power system be made up of parallel power supply according to the present invention;
Fig. 3 is the circuit framework schematic diagram according to the reverse-current protection device that is applied to power system of first preferred embodiment of the present invention:
Fig. 4 is the circuit framework schematic diagram according to the reverse-current protection device that is applied to power system of second preferred embodiment of the present invention.
See also Fig. 2, adopt diode for preventing that reverse current from flowing to power supply unit and causing sizable power loss for fear of power supply unit commonly used, be to adopt a field-effect transistor (FET) switch Q1 to replace diode in the present invention, in order to reduce the power loss in the circuit.As previously mentioned, the switching manipulation of control FET and not as such simple of the switching manipulation of control diode.Can make transistor Q1 conducting when flowing through transistor Q1 forward current (its flow direction is the extremely drain electrode of source electrode from transistor Q1) in order to control FET switch Q1, and when flowing through transistor Q1 transistor Q1 is closed at reverse current (its flow direction is draining to source electrode from transistor Q1), just want conducting and the shutoff operation of the complicated control circuit of a cover with oxide-semiconductor control transistors Q1.As shown in Figure 2, but two parallel power supplies 21 are in parallel mutually by a voltage bus 25 with 22, and field-effect transistor Q1 and Q2 are respectively as the reverse-current protection device of parallel power supply 21 with parallel power supply 22. FET controller 23 and 24 is respectively as the conducting of controlling filed effect transistor Q1 and Q2 and the control circuit of shutoff operation.
Can explain orally in detail by the embodiment of Fig. 3 about the field-effect transistor of the reverse-current protection device of parallel power supply and the circuit structure of its controller.In Fig. 3, according to first preferred embodiment of the present invention, the control circuit of oxide-semiconductor control transistors Q1 comprises a voltage comparator circuit (voltage comparatorcircuit) 31, one task comparator circuit (duty comparator circuit) 32, one transistor driver circuit 33 and an auxiliary circuit 34.Voltage comparator circuit 21 comprises a voltage comparator UI, in order to the output voltage V in (that is source voltage of transistor Q1) of comparison power supply unit and the voltage Vout (that is drain voltage of transistor Q1) of voltage bus.In theory, if the voltage Vout of voltage bus is during greater than the output voltage V in of power supply unit, reverse current just can produce, and the output state of voltage comparator U1 just can become 0.The output of voltage comparator U1 can be connected directly to the grid of transistor Q1 and close with driving transistors Q1, stops reverse current to flow into power supply unit.Therefore only need to rely on the drain electrode of voltage comparator U1 comparator transistor Q1 and the voltage difference of source electrode, just oxide-semiconductor control transistors Q1 closes when reverse current produces rapidly and exactly.
In fact, voltage comparator U1 itself has so-called offset voltage (offset voltage) and exists, so the voltage difference between the output voltage V in of the voltage Vout of voltage bus and power supply unit must be when overcoming the offset voltage of voltage comparator U1 itself, the output state of voltage comparator just can become 0 and close with driving transistors Q1.But the resistance of transistor Q1 itself is very little, so flow through the reverse current value of transistor Q1 enough height make cross-over connection can overcome the offset voltage of voltage comparator U1 itself in the voltage difference of the drain electrode of transistor Q1 and source electrode, voltage comparator circuit 31 can be closed by driving transistors Q1.Thus, only working voltage comparator circuit 31 oxide-semiconductor control transistors Q1 are back to the operation of parallel power supply and can't reach the designing requirement of pinpoint accuracy to avoid reverse current, therefore need an auxiliary control circuit to remedy voltage comparator U1 and are back to the shortcoming of power supply unit because of offset voltage can't prevent small reverse current.
Even oxide-semiconductor control transistors Q1 also can be driven under the very little situation of reverse current and close in order to want exactly, a task comparator circuit (duty comparator cicuit) 32 just is added into boost voltage comparator circuit 31 to come the conducting of oxide-semiconductor control transistors Q1 and close running.The design principle that task comparator circuit 22 is adopted is to utilize important coefficient in the power supply unit, i.e. the output task of transformer (output duty).If power supply unit has electric current output, then the secondary winding transformer end of transformer (secondary winding) 30 just has individual greater than zero output task.If power supply unit does not have electric current output, then the output task of transformer just is zero.Task comparator circuit 22 is in order to the output task of the transformer of detection power supply unit, and task comparator U2 be choose the secondary winding transformer end 30 of transformer mistake peak charging voltage (peak charging voltage) its represent the output task of transformer and a reference voltage Vref to compare (in the present embodiment, the voltage vcc that applied by the external world of this reference voltage gets through the voltage divider dividing potential drop be made up of resistance R 8 and R9).If the most advanced and sophisticated charging voltage (promptly representing the output task of transformer itself) of transformer secondary output winding is when being lower than reference voltage Vref, the output state of task comparator U2 can change 0 into, and driving transistors Q1 closes.
About the mode of voltage comparator U1 and task comparator U2 oxide-semiconductor control transistors Q1, be to decide by transistor driver circuit 33.Transistor driver circuit 33 comprises two bipolar junction transistor (BJT) Q2 and Q3, resistance R 6 and R7 and diode D2.Transistor driver circuit 33 is used to provide driving transistors Q1 to switch the required grid voltage of its on off state.The driving force of transistor driver circuit 33 driving transistors Q1 is to be decided in the output that circuit node N1 does disjunction operation (logic AND operation) by the output state of voltage comparator U1 and the output state of task comparator U2.If one of them output state of two comparators is 0, then the base voltage of Q2 and Q3 just is low, Q2 and Q3 all are in closing state makes that the emitter voltage of Q2 and Q3 is low, transistor driver circuit 33 offers the gate drive voltage (that is emitter voltage of Q2 and Q3) of transistor Q1 for low, and transistor Q1 just closes.If the output state of two comparators is all 1, then the base voltage of Q2 and Q3 just is high, the state that Q2 and Q3 all are in conducting makes the emitter voltage of Q2 and Q3 be height, transistor driver circuit 33 offers the gate drive voltage (that is emitter voltage of Q2 and Q3) of transistor Q1 for high, just conducting of transistor Q1.
Circuit operation principle according to the reverse-current protection device of first preferred embodiment of the present invention outlines as follows.When power supply unit is started shooting, because the output voltage of power supply unit is high than the external voltage of power supply unit, the transformer of power supply unit has sizable output task, so the output state of voltage comparator U1 and task comparator U2 is all 1, transistor Q1 conducting.After after a while,, the external voltage of power supply unit begins to produce if, then having small reverse current greater than the output voltage of power supply unit.Though voltage comparator U1 is 1 because the event of the offset voltage of itself keeps its output state, but task comparator circuit 32 detects the output task of transformer to be reduced, then the spike charging voltage of the secondary system resistance end of transformer drops to the magnitude of voltage that is lower than reference voltage Vref, the output state of task comparator becomes 0, and transistor Q1 just closes.In the output task of the transformer of power supply unit reduces, its output voltage also can descend, make the voltage difference between the voltage Vout of the output voltage V in of power supply unit and power supply unit outside promote, the output state of voltage comparator U1 also can become 0.At this moment, in order to keep the power loss of power supply unit, the output task of the transformer of power supply unit just can be driven and draw high, and makes the output state of task comparator revert to 1.Yet this moment, transistor Q1 was in closing state.In case when the output voltage of power supply unit was promoted to and equates with the external voltage of power supply unit, power supply unit just can provide the output current of a forward, the output state of voltage comparator UI just reverts to 1, just conducting of transistor Q1.
About the design of auxiliary circuit 34, it is to avoid producing when power supply unit is short-circuited the problem that reverse current is back to power supply unit.Auxiliary circuit 34 comprises a memory element, as capacitor C 31.When power supply unit during in normal running, its output voltage V in is high, and diode D6 just can conducting, and the output voltage V in of power supply unit just can be by diode D6 to capacitor C 31 chargings.Capacitor C 31 is the output voltage benchmark positions in order to the memory power supply unit.When power supply unit was short-circuited the problem on ground, its output voltage will descend, and diode D6 just can close, and capacitor C 31 just is discharged to the reverse input end 6 of voltage comparator U1 via diode D7.The voltage reference position of the reverse input end 6 of voltage comparator U1 is high at this moment, and the output state of voltage comparator U1 will become 0, and driving transistors Ah close, and avoids reverse current to flow into power supply unit.
Fig. 4 shows the circuit framework schematic diagram of the reverse-current protection device of the parallel connected power supply system that is applied to according to a second embodiment of the present invention.In the embodiment of Fig. 4, the secondary winding transformer end 40 of transformer, voltage comparator circuit 41, task comparator circuit 42, transistor driver circuit 43 are all identical with secondary winding transformer end 30, voltage comparator circuit 31, task comparator circuit 32, the transistor driver circuit 33 of the transformer of Fig. 3 embodiment at circuit structure and operating principle.On auxiliary circuit, the auxiliary circuit of the embodiment of Fig. 4 44 adopts the circuit design layout inequality with the auxiliary circuit 34 of the embodiment of Fig. 3.In the embodiment of Fig. 4, auxiliary circuit 44 has comprised a memory element, as capacitor C 3.When power supply unit during in normal running, its output voltage V in is high, and diode D7 just can conducting, and the output voltage V in of power supply unit just can be by diode D7 to capacitor C 3 chargings.Capacitor C 3 is the output voltage benchmark positions in order to the memory power supply unit.When power supply unit was short-circuited the problem on ground, its output voltage descended, and diode D7 just can close, and capacitor C 31 just is discharged to the base stage of bipolar junction transistor (BJT) Q5 via resistance R 16.This moment, the base voltage benchmark position of Q5 be high, and Q5 just can conducting, and driving transistors Q1 closes, and avoids directional current inflow power supply unit.
In sum, the present invention adopts field-effect transistor (FET) as controlling and to the circuit unit of current reflux to power supply unit, making the power loss of circuit reduce.Cooperate rapid and accurate control circuit oxide-semiconductor control transistors in the conducting during of electric current positive flow simultaneously, and when current reversal flows into power supply unit, close through field-effect transistor.The present invention utilizes the external voltage of a voltage comparator circuit comparison power supply unit whether to be higher than the output voltage of power supply unit, with the driving transistors conducting or close.The present invention also utilizes the output task of the transformer of a task comparator circuit by detecting power supply unit whether to reduce the output voltage that the external voltage that judges whether power supply unit is higher than power supply unit, with avoid voltage comparator because itself have offset voltage can't the Driving Field effect transistor be closed under the small situation of reverse current shortcoming.And the change action of transistor switch is to be decided with the driving transistors conducting or closed by the output of disjunction operation that a transistor driver circuit is carried out the output state of the output state of voltage comparator circuit and task comparator circuit.The present invention is provided with an auxiliary circuit extraly, and in order to when power supply unit is short-circuited, the Driving Field effect transistor is closed to avoid reverse current to flow to power supply unit.Therefore, reverse-current protection device of the present invention is the power loss of supply system capable of reducing power source not only, more can protect power supply unit to avoid being back to power supply unit at reverse current quickly and accurately.
The present invention can be modified or be improved by being familiar with present technique person, but all can not break away from the protection range of this claim.
Claims (14)
1. the abating protection device of a parallel power supply avoids a reverse current to flow into this power supply unit from a load in order to protect a power supply unit, it is characterized in that it comprises:
One transistor switch, one end are connected in an output voltage terminal of this power supply unit, and its other end is connected in the Input voltage terminal of this load;
One transistor control circuit, be electrically connected on this transistor switch, when flowing to this load, this power supply unit drives this transistor switch conducting in order to control this transistor switch at an electric current, close and drive this transistor switch from this load flow during to this power supply unit, and this transistor control circuit comprises at an electric current:
One voltage comparator circuit, be electrically connected on this power supply unit and this load, this comparator is in order to relatively an output voltage of this power supply unit and an input voltage of this load, an output voltage of this power supply unit and an input voltage of this load relatively after, send one first control signal;
One task comparator circuit, be electrically connected on this power supply unit, this comparator is in order to the voltage and a reference voltage of an output task of a transformer of relatively representing this point source supply, this sends one second control signal after representing the voltage of this output task of this transformer and this reference voltage relatively; And
One transistor driver circuit, be electrically connected on this voltage comparator circuit and this task comparator circuit, disjunction operation in order to the state of the state of carrying out this first control signal and this second control signal, and the running that produces a control signal oxide-semiconductor control transistors switch because of an output of this disjunction operation, in order to prevent an electric current from this load flow to this power supply.
2. device as claimed in claim 1 is characterized in that this transistor switch comprises a field-effect transistor.
3. device as claimed in claim 2, it is characterized in that this transistor control circuit also comprises an auxiliary circuit, be electrically connected on this voltage comparator circuit and this transistor driver circuit, in order to avoid an electric current when this power supply unit short circuit, this load flow is to this power supply unit certainly.
4. device as claimed in claim 3 is characterized in that, this auxiliary circuit comprises:
One memory element in order to remembering an output voltage benchmark position of this power supply unit, and when this power supply unit short circuit, discharges the inverting input of its stored energy to the comparator of this voltage comparator circuit;
One switch module, be electrically connected on this memory element, provide a discharge loop to give this anti-phase input end that this memory element is discharged to this comparator of this voltage comparator circuit in order to the control that is subjected to this memory element, close this transistor switch in order to this comparator that drives this voltage comparator circuit.
5. device as claimed in claim 4 is characterized in that this memory element comprises an electric capacity.
6. device as claimed in claim 4 is characterized in that this switch module comprises a diode.
7. device as claimed in claim 3 is characterized in that, this auxiliary circuit comprises:
One memory element in order to remembering an output voltage benchmark position of this power supply unit, and when this power supply unit short circuit, discharges its stored energy;
One threshold values driven unit, be electrically connected on this memory element, in order to accept the energy that this memory element discharges and drive this transistor switch, in order to when this power supply unit short circuit, close this transistor switch avoid an electric current from this load flow to this power supply unit.
8. device as claimed in claim 7 is characterized in that this memory element comprises an electric capacity.
9. device as claimed in claim 7 is characterized in that, this threshold values driven unit comprises a bipolar junction transistors.
10. the abating protection device of a parallel power supply; be applied in the power system; this power system is made up of by a voltage bus is in parallel mutually several power supply units; and this device is to be electrically connected between the output voltage terminal and this voltage bus of one of them this power supply unit; in order to avoid a reverse current to flow into this power supply unit, it is characterized in that comprising from this voltage bus:
One field-effect transistor, one end are connected in an output voltage terminal of this power supply unit, and its other end is connected in an Input voltage terminal of this voltage bus;
One voltage comparator circuit, this comparator be in order to an output voltage of relatively this power supply supply and an input voltage of this voltage bus, an output voltage of this power supply unit and an input voltage of this voltage bus relatively after, send one first control signal;
One task comparator circuit, comprise a voltage and the reference voltage of a comparator in order to an output task of a transformer of relatively representing this power supply unit, this sends one second control signal after representing this output voltage of this transformer and this reference voltage relatively; And
One transistor driver circuit, disjunction operation in order to the state of the state of carrying out this first control signal and this second control signal, and, flow to this power supply unit from this voltage bus in order to prevent an electric current because of an output of this disjunction operation produces the running that a control signal is controlled this field-effect transistor.
11. device as claim 10, it is characterized in that this transistor control circuit also comprises an auxiliary circuit, be electrically connected on this voltage comparator circuit and this transistor driver circuit, in order to avoid an electric current when this power supply unit short circuit, this load flow is to this power supply unit certainly.
12. the device as claim 11 is characterized in that, this auxiliary circuit comprises:
One memory element in order to remembering an output voltage benchmark position of this power supply unit, and when this power supply unit short circuit, discharges the inverting input of its stored energy to the comparator of this voltage comparator circuit; And
One switch module, be electrically connected on this memory element, provide a discharge loop to give this inverting input that this memory element is discharged to this comparator of this voltage comparator circuit in order to the control that is subjected to this memory element, close this field-effect transistor in order to this comparator that drives this voltage comparator circuit.
13. the device as claim 12 is characterized in that, this memory element comprises an electric capacity, and this switch module comprises a diode.
14. the device as claim 11 is characterized in that, this auxiliary circuit comprises:
One memory element in order to remembering an output voltage benchmark position of this power supply unit, and when this power supply unit short circuit, discharges its stored energy;
One threshold values driven unit, be electrically connected on this memory element, in order to accept the energy that this memory element discharges and drive this field-effect transistor, be used to when this power supply unit short circuit, close this field-effect transistor and avoid an electric current to flow to this power supply unit from this voltage bus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01119719 CN1249876C (en) | 2001-05-24 | 2001-05-24 | Failure protector for parallel power supply |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01119719 CN1249876C (en) | 2001-05-24 | 2001-05-24 | Failure protector for parallel power supply |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1388619A CN1388619A (en) | 2003-01-01 |
| CN1249876C true CN1249876C (en) | 2006-04-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 01119719 Expired - Fee Related CN1249876C (en) | 2001-05-24 | 2001-05-24 | Failure protector for parallel power supply |
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| Country | Link |
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| CN (1) | CN1249876C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1971453B (en) * | 2005-11-23 | 2010-05-05 | 新巨企业股份有限公司 | Boot protecting structure of parallel connected power supply device |
| TWI414119B (en) | 2009-10-30 | 2013-11-01 | Delta Electronics Inc | Power supply and power supply system incorporating a plurality of power supplies |
| CN102457047B (en) * | 2010-10-18 | 2015-04-08 | 台达电子工业股份有限公司 | Power supply and power supply system with multiple power supplies |
| US9570941B2 (en) * | 2014-10-31 | 2017-02-14 | Nxp B.V. | Autonomous power supply |
| CN108877719B (en) * | 2018-07-25 | 2021-01-05 | 惠科股份有限公司 | Power supply device and display device |
| CN112134448A (en) * | 2020-08-04 | 2020-12-25 | 华为技术有限公司 | Server and data center |
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2001
- 2001-05-24 CN CN 01119719 patent/CN1249876C/en not_active Expired - Fee Related
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| CN1388619A (en) | 2003-01-01 |
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