CN1248294C - Method for forming barrier layer and its formed structure - Google Patents
Method for forming barrier layer and its formed structure Download PDFInfo
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- CN1248294C CN1248294C CN 00128530 CN00128530A CN1248294C CN 1248294 C CN1248294 C CN 1248294C CN 00128530 CN00128530 CN 00128530 CN 00128530 A CN00128530 A CN 00128530A CN 1248294 C CN1248294 C CN 1248294C
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Abstract
The present invention relates to a method for forming a blocking layer in a copper procedure, which comprises the following steps: a substrate on which a conductive structure layer is formed is provided; a dielectric layer between metal is formed on the substrate, and is defined so as to form an opening, and thus, the substrate is exposed; an oxygen absorption layer is formed on the dielectric layer between metal, and is filled into the opening; a blocking layer is formed on the oxygen absorption layer; a copper material layer is deposited on the blocking layer; the oxygen absorption layer is in reaction with oxygen atoms in the dielectric layer between metal in the subsequent high temperature step so as to convert into and form the other blocking layer; the dielectric layer between metal is mainly made from material containing oxygen, and the oxygen absorption layer is made from any metal, such as titanium or tantalum, etc., which can be in reaction with the oxygen.
Description
The present invention relates to the structure of a kind of semiconductor making method and formation, the particularly a kind of method on barrier layer and barrier layer structure of formation of in copper process, forming.
When the manufacturing of semiconductor integrated component, when facing size and reaching generation below 0.13 micron, in the logic element operation of demand with conduction speed, the dielectric material of high-k is inapplicable.What replace is dielectric material with low-k, the operation of carrying out damascene, for example formation of copper interconnects structure.Herein, low-k is less than 4 material at dielectric constant.
Figure 1A and 1B illustrate the method profile that a tradition forms copper interconnects.In Figure 1A, a substrate 100 is arranged.One established conductive structure layer 106 is arranged in the substrate 100.One metal intermetallic dielectric layer 102 is formed in the substrate 100.Metal intermetallic dielectric layer 102 has defined, forms an opening 104, exposes the conductive structure layer 106 in the substrate 100.Before subsequent handling, generally can carry out the cleaning process of sputter (presputtering) in advance earlier.
In Figure 1B, after sputter cleaned in advance, a barrier layer 108 was formed on the metal intermetallic dielectric layer 102, and covered the circumferential surface of opening 104.Then, form a copper material bed of material, covered substrate 100 and filled up opening 104.Then, the operation of follow-up formation internal connection-wire structure (interconnect structure) is general known technology, should be those skilled in the art and is familiar with, and no longer describes in detail.
In above-mentioned, carry out in advance the sputter cleaning when the metal intermetallic dielectric layer 102 of low-k, it can make the surface of dielectric layer 102 become the dielectric layer of elevated oxygen level.According to the problem of the present invention's expection, the oxygen in the dielectric layer of elevated oxygen level can be penetrated into barrier layer 108, with its reaction, causes the destruction on barrier layer, has influence on the quality of product.
So in view of this, the invention provides a kind of method that in copper process, forms the barrier layer, wherein forming general barrier layer before metal intermetallic dielectric layer, form an oxygen absorbed layer earlier, itself and oxygen in the metal intermetallic dielectric layer are reacted, form an oxide layer.This oxide layer can prevent the oxygen atom of metal intermetallic dielectric layer also as the barrier layer, destroys the general barrier layer on conductive oxide layer.And oxide layer can prevent that also copper atom from infiltrating in the metal intermetallic dielectric layer.
The invention provides a kind of method that in copper process, forms the barrier layer, comprise a substrate at first is provided, be formed with a conductive structure layer in this substrate.In substrate, form a metal intermetallic dielectric layer.The definition metal intermetallic dielectric layer forms an opening, exposes substrate.Form an oxygen absorbed layer on metal intermetallic dielectric layer, and insert opening.Form a barrier layer on the oxygen absorbed layer.The deposit one copper material bed of material is on the barrier layer.The oxygen absorbed layer is in follow-up high-temperature step, and the oxygen atom reaction with in the metal intermetallic dielectric layer forms another barrier layer with transformation.Above-mentioned metal intermetallic dielectric layer is one mainly to contain the material of aerobic, and the oxygen absorbed layer be any can with the metal of oxygen reaction, for example titanium or tantalum etc.
The invention provides a kind of barrier layer structure in copper process, comprise a substrate.One metal intermetallic dielectric layer and has an opening and exposes this substrate in this substrate.One oxide layer covers the top layer of this metal intermetallic dielectric layer, and covers the circumferential surface of this opening, and wherein this oxide layer is one first barrier layer.And comprise that one second barrier layer is on this oxide layer.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and in conjunction with the accompanying drawings, elaborate.
Figure 1A and 1B illustrate the method profile that a tradition forms copper interconnects;
Fig. 2 A-2C illustrates according to the present invention, and one forms the method profile of copper interconnects structure.
When the internal connection-wire structure that formation is inlayed, because carrying out the in advance cleaner of sputter (presputtering) Order causes the higher metal intermetallic dielectric layer of oxygen content (inter-metal dielectric) surface. The present invention's expection The oxygen atom of metal intermetallic dielectric layer can be penetrated into the barrier layer of follow-up formation, with its reaction, causes the barrier layer Destruction. And then also can infiltrate the metal level of follow-up formation.
The present invention proposed before forming the barrier layer, formed earlier an oxygen and absorbed layer, and then carry out the barrier layer Deposit. This oxygen absorption layer is reacted into an oxygen with the oxygen atom of metal intermetallic dielectric layer in follow-up high-temperature step Change layer. This oxide layer prevents that oxygen from infiltrating the barrier layer or and then infiltrating in the internal connection-wire structure copper interconnects for example React. Cause the destruction of barrier layer and internal connection-wire structure. Oxide layer also can have the barrier layer in addition Function prevents in the internal connection-wire structure for example copper atom of metallic atom, infiltrates metal intermetallic dielectric layer. So oxygen Changing layer also becomes the part on whole barrier layers.
Below only with an embodiment as explanation.Fig. 2 A-2C illustrates the method profile according to a formation copper interconnects structure of the present invention.In Fig. 2 A, provide a substrate 200.Having in the substrate 200 to have an established conductive structure layer 206.One dielectric layer 202 is formed in the substrate 200.Dielectric layer 202 comprises it for example being the dielectric material of low-k (k＜4).This metal intermetallic dielectric layer 202 has been defined, is formed with an opening 204, exposes the conductive structure layer 206 in the substrate 200.Before subsequent handling, generally can carry out the cleaning process of sputter (presputtering) in advance earlier.This is the sputter cleaning process in advance, can make the surface of dielectric layer 202 become the dielectric layer of elevated oxygen level (oxygen rich), if wherein dielectric layer 202 forms with the dielectric material of low-k, the situation of elevated oxygen level is even more serious.
In Fig. 2 B, form an oxygen absorbed layer 208 and cover on the substrate 200.The present body structure surface of oxygen absorbed layer 208 in substrate 200 comprises dielectric layer 202 and opening 204 surface on every side.Oxygen absorbed layer 208 can, for example use general chemical deposition (CVD) or physical vapor deposition (PVD) deposit to form, its thickness can be about 50 dusts between 500 dusts.Oxygen absorbed layer 208 can be any material or metal that can react easily with oxygen, for example is titanium, tantalum metal, or general high-temperature metal (refractory metal).
After oxygen absorbed layer 208 formed, a barrier layer 210 was formed on the oxygen absorbed layer 208.Barrier layer 210 is general barrier layer, comprises for example tantalum, tantalum nitride, tantalum/tantalum nitride, titanium, titanium nitride, or titanium/titanium nitride.The barrier layer generally can increase the metal material of follow-up formation and the adhesive ability between the dielectric layer 202.
At Fig. 2 C, a metal level, for example a copper material bed of material 214 is deposited on the barrier layer 210, and inserts opening 204.The follow-up operation of finishing internal connection-wire structure for example defines the copper material bed of material 214, forms metal interconnecting structure, will no longer describe.
In follow-up high-temperature process step, therefore the oxygen atom reaction in oxygen absorbed layer 208 and the dielectric layer 202 is transformed into an oxide layer.If oxygen absorbed layer 208 is titaniums, become the titanium oxide layer after the reaction.Oxygen absorbed layer 208 is a principal character in the present invention, because of it can absorb oxygen atom in the dielectric layer 202, prevents to destroy the barrier layer and the internal connection-wire structure of follow-up formation.Also can carry out barrier functionality in addition with the barrier layer.
In above-mentioned, conductive oxide layer 208 can prevent the barrier layer 210 and the copper material bed of material 214, because of the infiltration reaction of oxygen in the dielectric layer 202, and destroyed.In addition also can be with barrier layer 210, what stop copper penetrates into dielectric layer 202.Therefore, conductive oxide layer 208 also is the part on barrier layer.
The present invention was forming the barrier layer before metal intermetallic dielectric layer, form an oxygen absorbed layer earlier, in follow-up high-temperature process, the oxygen absorbed layer can react with the oxygen in the metal intermetallic dielectric layer, form an oxide layer, so prevent the oxygen in the metal intermetallic dielectric layer, infiltrate in barrier layer and the internal connection-wire structure, damage.
Among the present invention,, also can prevent the metallic atom of internal connection-wire structure, infiltrate metal intermetallic dielectric layer, reduce the insulation effect of dielectric layer because of the formation of oxide layer.
In sum; though the present invention discloses as above with a preferred embodiment; right its is not in order to limit the present invention; any those skilled in the art; without departing from the spirit and scope of the present invention; can be used for a variety of modifications and variations, so protection scope of the present invention should be with being as the criterion that the claim scope is defined.
Claims (16)
1. method that forms the barrier layer, this method comprises:
One substrate is provided;
Form a dielectric layer in this substrate;
Define this dielectric layer, form an opening, expose substrate;
Form an oxygen absorbed layer and covered in this substrate, cover this dielectric layer, and cover the circumferential surface of this opening;
Form a barrier layer on this oxygen absorbed layer; And
This oxygen absorbed layer is in follow-up high-temperature process step, and the oxygen atom reaction with in this dielectric layer forms an oxide layer with transformation.
2. form the method on barrier layer according to claim 1, wherein forming before this oxygen absorbed layer covered this suprabasil this step, comprise again carry out one in advance the cleaning process of sputter at this dielectric layer.
3. form the method on barrier layer according to claim 1, wherein this dielectric layer comprises the material of low-k.
4. form the method on barrier layer according to claim 1, wherein, comprise a physical vapor deposition forming this oxygen absorbed layer in this suprabasil this step.
5. form the method on barrier layer according to claim 1, wherein, comprise a chemical vapor deposition forming this oxygen absorbed layer in this suprabasil this step.
6. form the method on barrier layer according to claim 1, wherein forming this oxygen absorbed layer in this suprabasil this step, comprise forming a titanium material layer.
7. form the method on barrier layer according to claim 1, wherein forming this oxygen absorbed layer in this suprabasil this step, comprise forming a tantalum material layer.
8. form the method on barrier layer according to claim 1, wherein forming this oxygen absorbed layer in this suprabasil this step, comprise formation can with a metal material layer of oxygen reaction.
9. form the method on barrier layer according to claim 1, wherein form in this step on barrier layer, comprise forming a tantalum layer, the tantalum nitride layer, and one tantalum/tantalum nitride layer three selects one.
10. form the method on barrier layer according to claim 1, wherein form in this step of this oxygen absorbed layer, the oxygen absorbed layer that this is conformal, its thickness are that 50 dusts are between 500 dusts.
11. a barrier layer structure comprises:
One substrate;
One dielectric layer and has an opening and exposes this substrate in this substrate;
One oxygen absorbed layer covers a top layer of this dielectric layer, and covers a circumferential surface of this opening;
One oxide layer is formed between this oxygen absorbed layer and this dielectric layer; And
One barrier layer is positioned on this oxygen absorbed layer.
12. as formation barrier layer structure as described in the claim 11, wherein this dielectric layer comprises the dielectric material that contains oxygen and the two one of low-k.
13. as formation barrier layer structure as described in the claim 11, wherein this oxygen absorbed layer have a thickness at 50 dusts between 500 dusts.
14. as formation barrier layer structure as described in the claim 11, wherein this oxygen absorbed layer comprises titanium.
15. as formation barrier layer structure as described in the claim 11, wherein this oxygen absorbed layer comprises tantalum.
16. as formation barrier layer structure as described in the claim 11, wherein this barrier layer comprises a tantalum layer, the tantalum nitride layer, and one tantalum/tantalum nitride layer three selects one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00128530 CN1248294C (en) | 2000-11-22 | 2000-11-22 | Method for forming barrier layer and its formed structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00128530 CN1248294C (en) | 2000-11-22 | 2000-11-22 | Method for forming barrier layer and its formed structure |
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| Publication Number | Publication Date |
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| CN1354497A CN1354497A (en) | 2002-06-19 |
| CN1248294C true CN1248294C (en) | 2006-03-29 |
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| CN 00128530 Expired - Lifetime CN1248294C (en) | 2000-11-22 | 2000-11-22 | Method for forming barrier layer and its formed structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4224434B2 (en) * | 2004-06-30 | 2009-02-12 | パナソニック株式会社 | Semiconductor device and manufacturing method thereof |
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