CN1244012C - Liquid crystal device and manufacture thereof - Google Patents
Liquid crystal device and manufacture thereof Download PDFInfo
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- CN1244012C CN1244012C CN 02127417 CN02127417A CN1244012C CN 1244012 C CN1244012 C CN 1244012C CN 02127417 CN02127417 CN 02127417 CN 02127417 A CN02127417 A CN 02127417A CN 1244012 C CN1244012 C CN 1244012C
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Abstract
In an active matrix type liquid crystal display comprising TFT15, the active matrix type liquid crystal display has a grid electrode line 12 and a data line 13, wherein the grid electrode line 12 is formed in a matrix mode and is connected to a source electrode line 14, and a contact hole 18 used for connecting the source electrode line 14 and a pixel electrode 17 is formed in a position which is superposed with a disclination line 19. The contact hole 18 is formed in a position superposed with a capacitor 12 ba of the grid electrode line 12, the grid electrode line 12 and the source electrode line 14 are mutually and oppositely supplied, and an electrostatic capacitor is arranged between the grid electrode line 12 and the source electrode line 14.
Description
Background of invention
Invention field
The present invention relates to LCD and manufacture method thereof, relate in particular to the active matrix-type liquid crystal display device and the manufacture method thereof that on its device substrate, have color filter.
Description of related art
Active matrix-type liquid crystal display device comprises: have on-off element for example transistor etc. device substrate, be set to the relative substrate relative with device substrate, and liquid crystal is filled into device substrate and relatively between the substrate.
Substrate has color filter (CF) and black substrate relatively.Color filter is made of regularly arranged red, green or blue chromatograph.Black substrate is formed by the film with shading performance (opaque).Black substrate has shielded the disclination of liquid crystal and has reduced so that prevent contrast.
Liquid crystal is filled in device substrate and relatively in the space between the substrate.Oriented layer is respectively formed on the apparent surface of device substrate and relative substrate.Form oriented layer by this way: resin molding for example polyimide is formed on the substrate, directional process is carried out on the surface that obtains for example swipe.
Liquid crystal is filled in device substrate and relatively in the space between the substrate, forms oriented layer respectively on the apparent surface of device substrate and relative substrate.Oriented layer so forms: form for example resin molding of polyimide on substrate, directional process is carried out on the surface that obtains for example swipe.Oriented layer provide with liquid crystal in the predetermined orientation (orientation) of liquid crystal molecule.
Here, disclination refers to directed defective, and wherein the unexpected variation owing to level error, Electric Field Distribution and the driving voltage of the orientation surface of liquid crystal causes the orientation direction of liquid crystal molecule to occur discontinuous.This liquid crystal aligning defective shows as line or point defect, causes display quality to reduce.Disclination appears in the viewing area, the inhomogeneous partial stack of the liquid crystal aligning that causes with irregular part on the substrate surface, by scraping degree change etc.
In said structure, wherein, need to make preformed black substrate to have the width wideer in design than desirable shielded area providing color filter and black substrate on the substrate relatively.Reason is to guarantee that the orientation that is used for device substrate and relative substrate has the error surplus.Yet,, be difficult to the aperture of liquid crystal display cells is established greatly than (aperture ratio), thereby reduced brightness if the width of black substrate is too wide.Here, the aperture is than referring to the elemental area that the contributes to optical modulation number percent with respect to the whole surface area of the viewing area of display panels.
In order to improve the aperture ratio of liquid crystal display cells, the structure that forms color filter and black substrate on device substrate is disclosed.This is called CF (color filter)-On TFT structure, for example, has described this structure in Jap.P. No.2758410 and the careful flat 3-237432 of Japanese Patent Application Laid-Open No..
In CF-On TFT structure, color filter and black substrate are formed on the device substrate.Therefore, do not need to guarantee the directed surplus of device substrate and relative substrate.Like this can simplified manufacturing technique, and can obtain high aperture ratio.
Under the situation that improves high definition, use CF-On TFT structure to be difficult to realize high aperture ratio that reason is as follows.
More particularly, in CF-On TFT structure, the size of contact hole that is used to connect pixel electrode and source electrode is quite big, and the area that contact hole is monopolized in each pixel region accounts for quite high number percent.This is because the taper of the side surface of contact hole must gently form, so that horizontal separation appears in the pixel electrode that prevents to be formed on the inside surface of contact hole.In order to make taper mild, a plurality of layers (passivation layer, color layer, overlayer etc.) of separating pixel electrode and source electrode are charted so that form the hole respectively.This be under every layer of situation that forms contact hole, need guarantee directed surplus for each technology of charting.As a result, the size of contact hole is quite big.Usually to give the regions shield light of contact hole.Therefore, the number percent of contact hole area increases along with the increase of high definition in the pixel region, causes the aperture than reducing relatively.
In addition, being used to cover the number percent of area that the black veil in district appears in (shielding) disclination also increases relatively along with the increase of high definition, and this is not limited to CF-On TFT structure certainly.Therefore, the aperture is than reducing relatively.
Like this, in active matrix liquid crystal display, even use CF-On TFT structure, if but high definition improves and pel spacing narrows down, and the number percent of shielded area increases relatively so, causes the aperture than reducing.On the other hand, in order to realize high aperture ratio, if the number percent of shielded area is little, disclination becomes obvious so.
Summary of the invention
In order to address the above problem, the purpose of this invention is to provide a kind of LCD and manufacture method thereof, it can realize high aperture ratio.
In addition, another object of the present invention provides a kind of LCD and manufacture method thereof, and it can cover disclination.
For a technical scheme according to the present invention realizes above-mentioned purpose, a kind of LCD is provided, comprising:
Substrate is to (101,201);
Be sealed in described substrate to the liquid crystal between (101,201) (300)
A plurality of data lines (13) and a plurality of sweep trace (12) are arranged on the surface of described substrate to one of (101,201), and intersect each other;
On-off element (15) makes an end of current path be connected to corresponding data line (13), and control end is connected to corresponding sweep trace (12);
Connect up (14), be connected to the other end of the current path of described on-off element (15);
Insulation course (104 to 106) is formed in the described wiring (14), and has contact hole (18), and expose by contact hole (18) end (14b) of described wiring (14);
Pixel electrode (17) is formed on the described insulation course (104 to 106), and is electrically connected to by contact hole (18) on the end (14b) of described wiring (14);
Oriented film (107) is formed on the described pixel electrode (17), and contacts with described liquid crystal (300);
Wherein said contact hole is formed on the position that occurs district's stack with disclination.
According to the LCD of a technical scheme of the present invention, wherein said insulation course (104 to 106) can be formed by a plurality of laminated insulation films (104 to 106).
Dielectric film (104 to 106) can have opening (104a to 106a) individually, their whole described contact holes (18) that forms taper.
According to the LCD of a technical scheme of the present invention, wherein said dielectric film (104 to 106) can comprise the passivating film (104) that is formed on the on-off element (15), be formed on the color layer (105) on the described passivating film (104) and be formed on described passivating film (104) and color layer (105) on flatted membrane (106).
Described contact hole (18) can comprise the opening (104a to 106a) that is respectively formed in passivating film (104), color layer (105) and the flatted membrane (106), and opening (104a to 106a) integrally forms taper.
According to the LCD of a technical scheme of the present invention, wherein said wiring (14) can by light screening material make and described contact hole (18) and described disclination at least a portion in district appears and can be by described wiring shielding.
LCD according to a technical scheme of the present invention, wherein sweep trace (12) and data line (13) have been determined the border of a plurality of pixels (11), each pixel all has contact hole (18), with respect to the on-off element (15) of other pixel (11) adjacent with pixel (11), the described contact hole (18) in the pixel (11) can provide in the downstream of scraping wiping direction.
According to the LCD of a technical scheme of the present invention, wherein said sweep trace (12) can have the outshot (12b) that occurs district's stack and shielded from light with described contact hole (18) and/or described disclination.
LCD according to a technical scheme of the present invention, also comprise the black substrate (16) with described data line (13) stack, wherein said black substrate (16) can have and pixel described in the wide part (16a) that superposes of zone between data line (13) and the outshot (12b).
According to the LCD of a technical scheme of the present invention, wherein said outshot (12b) can form electrostatic capacitance between wiring (14).
In order to realize purpose according to a second technical aspect of the present invention, a kind of manufacture method of LCD is provided, LCD comprises: thin film transistor (TFT) (15), the wiring (14) that is connected with described thin film transistor (TFT) (15), the pixel electrode (17) that is electrically connected with described wiring (14) and be formed on oriented film (107) on the described pixel electrode (17) comprise step:
Go up formation insulation course (104 to 106) at thin film transistor (TFT) (15) and wiring (14);
In insulation course (104 to 106), form contact hole (18), expose the end (14b) of described wiring (14) by contact hole (18);
Go up formation pixel electrode (17) at insulation course (104 to 106), pixel electrode (17) is electrically connected with wiring (14) by contact hole (18);
Go up formation oriented film (107) at pixel electrode (17),
The step that wherein forms contact hole (18) is included in the step that occurs the position formation contact hole (18) of district's stack with disclination.
The manufacture method of the LCD of second technical scheme according to the present invention, insulation course (104 to 106) can comprise a plurality of laminated insulation films (104 to 106), and the step that forms contact hole (18) for example comprises the step that forms opening (104a to 106a) respectively in a plurality of dielectric films (104 to 106).
The manufacture method of the LCD of second technical scheme according to the present invention, insulation course (104 to 106) for example comprise the passivating film (104) that is formed on the on-off element (15), be formed on the color layer (105) on the described passivating film (104) and be formed on described passivating film (104) and color layer (105) on flatted membrane (106), the step that forms described contact hole (18) for example comprises the step that forms opening (104a to 106a) respectively in passivating film (104), color layer (105) and flatted membrane (106), thereby forms tapered contact holes (18) on the whole.
Brief description of drawings
By reading following detailed and accompanying drawing, it is more apparent that above and other objects of the present invention and advantage will become, wherein:
Fig. 1 is the floor map according to LCD of the present invention;
Fig. 2 is the cross section structure figure of LCD shown in Figure 1;
Each figure of Fig. 3 A-3I has shown the manufacturing process of LCD shown in Figure 1;
Fig. 4 has shown the assay of relation between sharpness and the contact hole area ratio;
Fig. 5 is the planimetric map according to the comparative illustration liquid crystal display device structure;
Fig. 6 is the view of explanation an alternative embodiment of the invention.
The detailed description of most preferred embodiment
Here LCD of the present invention will be described with reference to the accompanying drawings.The LCD of this embodiment is an active matrix liquid crystal display, has the TFT (thin film transistor (TFT)) as active component.
Fig. 1 is the plane figure according to the unit pixel district 11a on the TFT substrate 100 of the active matrix liquid crystal display 11 of this embodiment.Fig. 2 has shown the cross section structure of active matrix liquid crystal display 11.The cross section that this sectional view obtains corresponding to the direction of arrow along the A-A ' line of TFT substrate 100 shown in Figure 1, along the cross section that the direction of arrow of B-B ' line obtains and the cross section of its end.
As shown in Figure 2, the LCD 11 of this embodiment comprises TFT substrate 100, relative substrate 200 and liquid crystal 300.
As shown in Figure 1, gate line 12 extends at directions X (horizontal direction among the figure), and the limit of the directions X of determining unit pixel region 11a.Gate line 12 has the first outshot 12a and the second outshot 12b, in the drawings, the first outshot 12a extends to the TFT position overlapped of upside and unit pixel district 11a, the Y direction of the second outshot 12b in downside unit pixel district 11a extended, the first outshot 12a constitutes the TFT grid, as hereinafter described.
The second outshot 12b has masked segment 12ba and capacitive part 12bb.Masked segment 12ba is essentially square, with the stack of the zone of contact hole 108 and shield it, as hereinafter described.It should be noted that the opening 12c that is used to suppress stray capacitance be formed on masked segment 12ba middle body and with the position of contact hole 18 stacks, this will be described later.Form the capacitive part 12bb of the second outshot 12b in the following manner: make capacitive part 12bb on directions X, have the width narrower, and on the Y direction, extend to the central authorities of unit pixel district 11a basically from masked segment 12ba than masked segment 12ba.Capacitive part 12bb forms auxiliary capacitor between relative source electrode line 14, as hereinafter described.
As described in Figure 2, on first transparency carrier 101 and gate line 12, formed gate insulating film 102.Gate insulating film 102 is formed by the stack membrane of silicon oxide film, silicon nitride film etc. or these materials.
On the gate insulating film 102 on the first outshot 12a of gate line 12, form semiconductor island 103.Semiconductor island 103 is formed by amorphous silicon, polysilicon etc.On the surface of semiconductor island 103, formed with the district of having mixed as impurity materials such as phosphorus.By groove 103a doped region is divided into source region and drain region.Semiconductor island 103 forms TFT15 with the first outshot 12a that plays the grid effect.
As shown in Figure 2, data line 13 and source electrode line 14 on gate insulating film 102, have been formed.For example, data line 13 and source electrode line 14 are by forming as the metal of chromium, aluminium, molybdenum etc. or the stack membrane of these materials.
As shown in Figure 1, data line 13 extends in the Y direction, and the border of the Y direction side of determining unit pixel region 11a.Data line 13 has the drain electrode part 13a that always extends to the TFT15 place among the unit pixel district 11a at directions X.As shown in Figure 2, drain electrode part 13a contacts with a doped region (drain region on Fig. 2 right side) of the semiconductor island 103 of TFT 15, thereby forms the drain electrode of TFT 15.
Basically the central authorities at unit pixel district 11a are formed on the source electrode line 14 that the Y direction is extended, and source electrode line 14 is relative with the second outshot 12b of gate line 12.One end 14a of source electrode line 14 is connected to the source region of semiconductor island 103, and plays the effect of the source electrode of TFT 15.The other end 14b of source electrode line 14 places and the opening 12c position overlapped that is centered on by the second outshot 12b, and is connected to pixel electrode 17 by contact hole 18, and this will be described later.
It should be noted that in the central authorities that are unit pixel district 11a basically provides source electrode line 14, and source electrode line separates with data line 13 with gate line 12, makes that the possibility that short circuit occurs is very low.
As shown in Figure 2, on gate insulating film 102, formed passivation layer 104, so that covering gate polar curve 13, source electrode line 14 and semiconductor island 103 etc.Passivation layer 104 is formed by the stack membrane of monox, silicon nitride etc. or these materials.
In addition, formed color layer 105 on passivation layer 104, color layer 105 is for example made and is formed on the passivation layer 104 by photosensitive resin etc.For each unit pixel district 11a provides color layer 105 one by one, and with any color dyes of red, green and blue.
On color layer 105, formed black substrate (black matrix) 16.Black substrate 16 is made by shading (opaque) material, is for example made by the resin material that has wherein disperseed carbon granule.As shown in Figure 1, black substrate 16 cover data lines 13 and form widelyer than data line 13 cover data line 13 in order to avoid backlight illumination.
In addition, black substrate 16 has all at the directions X outstanding first wide part 16a and the second wide part 16b.The first wide part 16a is provided forms the district so that cover TFT 15.Provide the second wide part 16b so that the masked segment 12ba of the second outshot 12b of part covering gate polar curve 12, and the gap between the other end 14b of covering gate polar curve 13 and source electrode line 14.
On outer cover 106, form pixel electrode 17.Pixel electrode 17 by transparent conductive material for example ITO (tin indium oxide) make.
Similar with TFT15, data line 13 etc., the formation district that also needs to cover contact hole 18.Here, source electrode line 14 is made by the shading metal, and contact hole 18 covers (shielding) by the end 14b of source electrode line 14.
As shown in Figure 2, contact hole 18 comprises the 106a that opens that opens 105a and outer cover 106 that opens 104a, color layer 105 of passivation layer 104. Open 105a and 106a and form mild taper.In addition, the sidewall of opening 105a of color layer 105 covers so that do not contact with pixel electrode 17 with outer cover 106.
On pixel electrode 17 and outer cover 106, formed oriented film (alignment film) 107.Oriented film 107 is made by polyimide resin etc.Orientation (orientation) is carried out on the surface of oriented film 107 to be handled for example to predetermined direction scraping.Oriented film 107 makes liquid crystal molecule in predetermined direction orientation.
In addition, polarization plates 108 is adhered on another surface of TFT substrate 100.
On the other hand, substrate 200 comprises second transparency carrier 201, comparative electrode 202 and oriented film 203 relatively.
In order to drive LCD 11, the driving circuit (not shown) imposes on gate line 12 successively with grid impulse, and will synchronously impose on data line 13 with grid impulse basically corresponding to the voltage data signal of display gray scale.With apply (selection) TFT15 that is connected of the gate line 12 of grid impulse be energized.Here, the voltage that is applied to data line 13 imposes on pixel electrode 17 by drain electrode 13a, semiconductor island 103, source electrode 104a, source electrode line 104, end 104b and contact hole 18.
When grid impulse was turn-offed, TFT15 was unexcited.Here, the voltage that imposes on pixel electrode 17 remains in the auxiliary capacitor between the capacitive part 12b of electric capacity (pixel capacitance) between pixel electrode 17 and the comparative electrode 202 and source electrode line 14 and gate line 12.
As a result, before next select time, will the voltage corresponding with display gray scale impose on the liquid crystal 300 of each unit pixel district 11a, liquid crystal 300 is directed on desirable orientation, has shown the color with the color layer 105 of wishing gray scale.
In said structure LCD 11, on the surface of oriented film 107, there is the zone of having carried out inhomogeneous directional process through scraping.In this zone, when carrying out display operation, so-called disclination (disclination) can appear.
For example, as shown in Figure 1, suppose to scrape wiping direction and be the direction shown in the arrow (direction) from the upper right portion of Fig. 1 to bottom left section.In this case, form in the district at the TFT of another unit pixel district 11a adjacent with unit pixel district 11a shown in Figure 1, because it is outstanding with the other parts comparison surface, the degree of swiping at the downstream side (11a upper left district in unit pixel district among Fig. 1) of scraping is light so, and is littler than other district to the directed limitation capability of liquid crystal molecule.
When display operation, have border between the zone of the directed limitation capability of this difference and the disclination line 19 that forms to bottom left section from the upper right portion of the unit pixel district 11a of Fig. 1 for example occurs.
In this embodiment, as shown in Figure 1, contact hole 18 is formed on and the position that the area overlapping of disclination occurs (zone that disclination line 19 occurs).Therefore, with respect to figure in TFT among adjacent another unit pixel district 11a of the unit pixel district 11a that shows, contact hole 18 is arranged on the downstream of scraping wiping direction.According to this structure, the contact hole 18 that not only covered (shielding) and also covered (shielding) disclination the district appears.Therefore, compare with the situation that the masked segment that is used to cover disclination line 19 provides separately, can highly guarantee the viewing area and can obtain higher aperture ratio with the masked segment that is used to cover contact hole.
In addition, in the structure of this embodiment, between the end of source electrode line 14 14b and adjacent data line 13, provide the first wide part 16a of black substrate 16.Therefore, first of disclination line 19 between source electrode line 14 and the data line 13 even the black substrate 16 of the quilt wide part 16a shielding.In addition, the other end of disclination line 19 (upper right portion of unit pixel district 11a) is overlapping with gate line 12.Therefore, whole basically disclination forms district's (disclination line 19) all by source electrode line 14, gate line 12 and black substrate 16 shieldings.As a result, and separate the structure that is provided for shielding disclination line 19 with source electrode line, gate line, source electrode line and compare, can access higher aperture ratio.
Make the method for LCD 11 with said structure below with reference to Fig. 3 A-3I explanation.Manufacture method shown in below it should be noted that only is an example, if can obtain similar structure, any manufacture method can.In addition, the material shown in below the material of use also is not limited to.
At first, form the metal film of being made by chromium etc. on the surface of first transparency carrier 101, this metal film that charts is so that form gate line 12, as shown in Figure 3A.Then, shown in Fig. 3 B, form dielectric film (gate insulating film 102) thereon, for example silicon oxide film etc.
Then, shown in Fig. 3 B, on gate insulating film 102, form the semiconductor island 103 have doped region, to make by amorphous silicon etc.Semiconductor island 103 forms by deposition of semiconductor layer, usefulness impurity material doping semiconductor layer and drawing semiconductor layer.
Then, shown in Fig. 3 C, on gate insulating film 102, form the metal level of making by chromium etc. 110.Then shown in Fig. 3 D, by drawing metal levels 110 such as photoetching techniques so that form the data line 13 and the source electrode line 14 of above-mentioned shape.At this moment, on semiconductor island 103, form groove 103a, semiconductor island 103 is divided into source region and drain region.
Shown in Fig. 3 E, on gate insulating film 102, form passivation layer 104 and the resin bed 105 made by silicon oxide film etc. successively, then so that cover data line 13 etc.
After this, by isotropic etching resin bed 105 is charted to have mild tapered sidewalls, and cut apart to each pixel.Then, give resin bed 105 painted, thereby form color layer 105 with any color among the RGB.
It should be noted that color layer 105 can form after the opening 104a, by formation such as printings on passivating film 104.Then, shown in Fig. 3 F, form in color layer 105 and open 105a, each opening 103a, 104a make by independent photoetching process here, and the 105a that opens of the color layer 105 of formation has mild tapered sidewalls.
Then, form screened film on color layer 105, this screened film that charts is so that form the black substrate 16 with above-mentioned shape.Then, shown in Fig. 3 G, on passivation layer 104, form the resin solution film, and make the film sclerosis that obtains so that form outer cover 106 by spin coating etc.Outer cover 106 is made by having the transparent resin material that highly flattens effect, and its leveling is because that color layer 105 and black substrate 16 cause is irregular.Then, on outer cover 106, form opening 105a by isotropic etching etc.Opening 105a so forms, so that cover the sidewall of opening 105a of color layer 105, and has level and smooth conical surface.Like this, formed contact hole 18 with opening 103a, 104a, 105a.
Then, shown in Fig. 3 H, form nesa coating by sputtering on the outer cover 106, ITO etc. for example is so that contact with source electrode line 14 by contact hole 18.The drawing nesa coating is so that form pixel electrode 17 in each pixel region.Pixel electrode 17 contacts with source electrode line 14 by contact hole 18.
Then, form the oriented film of being made by resin etc. 107 on pixel electrode 17, its surface of swiping is so that provide directional process.In addition, around the end of LCD, provide seal (109).Then polarization plates 108 is bonded to the another side of first transparency carrier 101.So just made the TFT substrate 100 shown in Fig. 3 I.
Then, the TFT substrate of so making 100 is bonded on the relative substrate 200 of separately preparation, so that with the mode clamping spacer (not shown) relative with each oriented film 107.Then, between two substrates, charge into liquid crystal 300.By this way, made liquid crystal display 11 as shown in Figure 2.
In the manufacture method of above-mentioned LCD, form opening and form contact hole 18 by separating with passivation layer 104, color layer 105 and outer cover 106.For this reason, must utilize in three photomasks each to provide directed.If consider orientation error in design photomask, the diameter of contact hole 18 is tending towards increasing so.Yet the formation district that district and contact hole 18 appear in disclination overlaps each other as in this embodiment, and this makes compares with the situation that contact hole and disclination formation distinguish formation, can prevent that the viewing area from reducing and realize high aperture ratio.
In addition, using under the situation of photosensitive resin as color layer 105, when photosensitive resin film exposure and photosensitive resin film isotropy are dissolved in the developer solution, optical diffraction can occur., for example, compare for this reason, the trend of the diameter increase of contact hole 18 is arranged with the situation of etching inoranic membrane.Yet the contact hole 18 that forms as this embodiment district's stack occurs with disclination, even the diameter of contact hole 18 is quite big, also can realize quite high aperture ratio.
(example)
Our area by check pel spacing and contact hole 18 than between relation studied reducing of aperture ratio with high definition.The results are shown in Fig. 4.
Fig. 4 has shown the result of research LCD, and wherein contact hole 18 does not superpose with disclination line 19, as shown in Figure 5.Except the position of contact hole 18, structure shown in Figure 5 structure with shown in Figure 1 basically is the same.
In addition, in Fig. 5, under the situation of considered pixel size not, suppose that contact hole 18 has foursquare cross section, and have the outside dimension of 14 ì m * 14 ì m.In addition size value be the outside dimension when the opening of passivation layer 104 be 8 ì m * 8 ì m and outer cover 106 and color layer 105 whenever stress the value that obtains when folded surplus is 1.5 ì m.At this moment, suppose that a contact hole 18 with 196 ì m2 sectional areas is present among the unit pixel district 11a.
If the number percent that the area of contact hole 18 is occupied elemental area is set at the area ratio of contact hole 18, the area of contact hole 18 ratio is calculated as follows so:
More particularly, has red, blue and each green pixel combination with one another of size, demonstration of 100 ì m * 300 ì m, so that produce colored the demonstration.For example, be under the situation of 300 ì m at pel spacing, calculate 100 ì m * 300 ì m Pixel Dimensions and 196 ì m
2Ratio between the contact hole area is 0.65%, as the area ratio of the contact hole 18 of each pixel.By this way, can the calculating pixel spacing, the area ratio of sharpness and contact hole 18, as shown in Figure 4.
When sharpness is lower than 100dpi (dpi (dots per inch)), as shown in Figure 4, the area of contact hole 18 ratio is lower than below 1%, and this is because when sharpness is low, contact hole 18 and gate line 12 or data line 13 stacks make the size of contact hole 18 not influence than having the effective aperture.
Yet when sharpness surpassed 150dpi, wiring attenuated, and can not cover contact hole 18 fully like this.For this reason, be approximately 126 ì m and sharpness is under the situation of 200dpi at pel spacing, the distribution of contact hole 18 areas reaches 3.70% of elemental area, big like this ratio make its calculated hole diameters than the time can not be left in the basket.
Therefore, when sharpness surpasses 200dpi, need be provided for covering the shadow zone of disclination.That is, under the big situation of pel spacing, can cover disclination by wiring.Yet wiring width is accompanied by microminiaturization and narrows down, and causes disclination to appear at the viewing area.Though this need be used to cover the structure in the zone that disclination occurs,, can reduce the aperture ratio if this structure is provided.Therefore need a kind of method that is used to shield disclination appearance district and does not reduce the aperture ratio.
The effect that obtains when here, assessment utilizes structure shown in Figure 5 to cover the district that disclination occurs with source electrode line 14, gate line part 12 and black substrate 16.Answering the noticed pixel spacing is 126 ì m, and the external diameter in the cross section of contact hole 18 is 8 ì m * 8 ì m, and every layer directed surplus (alignmentmargin) is 1.5 ì m.
This assesses demonstration, compares with the structure of Fig. 5, and according to the structure of Fig. 1 disclination line 19 with contact hole 18 stacks, the aperture ratio has increased by 5.5%.At this moment, because the aperture ratio is approximately 4.0%, therefore can improve the aperture relatively than about 13.8%.This result shows that even have the high definition of about 200dpi, the district appears in disclination also can realize high aperture ratio with the structure that contact hole 18 forms district's stack.
As mentioned above, according to this embodiment, provide a kind of structure, wherein district's stack each other appears in the formation district of contact hole 18 and disclination.According to utilizing normal elements to cover the structure in each district, compare with the situation of using common curtain-shaped cover member, can obtain higher aperture ratio.
In addition, said structure can more effectively be applied to resolution height for example 200dpi or littler situation.That is, when the area of contact hole in sharpness height and the pixel can not be left in the basket, use said structure can obtain high aperture ratio.Specifically, in CF-On TFT15 structure, need on a plurality of layer, form opening independently, be used to guarantee that the size of the contact hole 18 of directed surplus is tending towards increasing.Therefore, even sharpness has improved, also can use said structure to suppress reducing of aperture ratio effectively.
Most preferred embodiment of the present invention has been described above.Yet the present invention is not limited to top embodiment, and under the situation of not leaving spirit widely of the present invention and scope, it all is possible revising and adding.
In the above embodiments, formed the contact hole 18 of the wide end 14b that passes source electrode line 14.Yet, the position of the shape of source electrode line 14 and contact hole 18 is not limited to top example, if electric capacity can be formed between gate line 12 and the source electrode line 14, and the zone that is used for contact hole 18 and disclination is can be covered effectively the time, and any structure all is possible.For example, as shown in Figure 6, can form source electrode line 14 so as not only with the second outshot 12b of gate line 12 stack, and with its main line stack.In this structure, the zone of contact hole 18 and/or disclination is all shielded by the main line of gate line 12.
In addition, in the above-described embodiments, on data line 13, form passivation layer 104.Yet,, also can obtain identical effect even in the structure that does not have passivation layer 104.
In addition, in the above-described embodiments, when scraping wiping direction and swipe as shown in Figure 1, disclination line 19 can appear like that as shown in FIG..Yet even scrape the direction that wiping direction is other, the disclination line is formed on the position different with the position of Fig. 1, also can use the present invention.In this case, for example, if the disclination line appears at another angle of pixel region, form so with occur position stack contact hole 18, can certainly obtain effect of the present invention.
In addition, in the above-described embodiments, formed a contact hole 18 that is used to connect TFT15 and pixel electrode 17.For this reason, by the existence of contact hole 18, make the minimum that reduces of aperture ratio.Yet the present invention certainly is applied to form the situation of a plurality of contact holes.
In addition, active component (on-off element) not only can be TFT15, and can be MIM, diode etc.In addition, TFT15 can be that forward direction is staggered, and promptly grid is positioned at the offside of the relative semiconductor layer of first transparency carrier 101, rather than reverse interleaved type.
In addition, utilize so-called CF (chromatic color filter)-On TFT example of structure that the foregoing description has been described, wherein color layer 105 is formed on the TFT substrate 100.Yet the present invention can be applied to color layer 105 wherein and be formed on structure on the relative substrate 200.In other words, if arrange the formation district of contact hole 18 and disclination to form district's stack each other, the present invention can be applied to any LCD.
In addition, the foregoing description has illustrated following situation: wherein active matrix liquid crystal display is applied to the vertical electric field type active matrix liquid crystal display.Yet the present invention also can be applied to other LCD, for example simple matrix type LCD, ferroelectric liquid Crystal, polymer dispersion type liquid crystal display device or IPS (plane internal conversion-In Plane Switch) type LCD.
Under the situation of not leaving spirit widely of the present invention and scope, can make various embodiment and variation.The foregoing description is that the present invention will be described, does not limit the scope of the invention.Scope of the present invention is represented by additional claim, rather than embodiment.The various modifications of making in the equivalent meaning of claim of the present invention and in the claim all should be thought within the scope of the invention.
Claims (11)
1. liquid crystal indicator comprises:
Substrate is to (101,201);
Be sealed in described substrate to the liquid crystal between (101,201) (300);
A plurality of data lines (13) and a plurality of sweep trace (12) are arranged on the surface of described substrate to one of (101,201), and intersect each other;
On-off element (15) makes an end that has current path be connected to corresponding data line (13), and control end is connected to corresponding sweep trace (12);
Connect up (14), be connected to the other end of the current path of described on-off element (15);
Insulation course (104 to 106) is formed in the described wiring (14), and has contact hole (18), and expose by contact hole (18) end (14b) of described wiring (14);
Pixel electrode (17) is formed on the described insulation course (104 to 106), and is electrically connected to by contact hole (18) on the end (14b) of described wiring (14);
Oriented film (107) is formed on the described pixel electrode (17), and contacts with described liquid crystal (300);
Wherein said contact hole (18) is formed on the position with the zone stack that disclination takes place.
2. according to the liquid crystal indicator of claim 1, wherein said insulation course (104 to 106) is formed by a plurality of laminated insulation films (104 to 106),
Each dielectric film (104 to 106) has out (104a to 106a) respectively, the whole described contact hole (18) that forms taper of described opening.
3. according to the liquid crystal indicator of claim 1, wherein said dielectric film (104 to 106) comprise the passivating film (104) that is formed on the on-off element (15), be formed on the color layer (105) on the described passivating film (104) and be formed on described passivating film (104) and color layer (105) on flatted membrane (106)
Described contact hole (18) comprises the opening (104a to 106a) that is respectively formed in passivating film (104), color layer (105) and the flatted membrane (106), and opening (104a to 106a) forms taper on the whole.
4. according to the liquid crystal indicator of claim 1, wherein said wiring (14) is made by light screening material,
Described contact hole (18) and described at least a portion that the zone of disclination occurs are shielded by described wiring.
5. according to the liquid crystal indicator of claim 1, wherein sweep trace (12) and data line (13) define a plurality of pixels (11), and each pixel all has contact hole (18),
With respect to the on-off element (15) of other pixel (11) adjacent with pixel (11), the described contact hole (18) in the pixel (11) provides at the downstream part of scraping wiping direction.
6. according to the liquid crystal indicator of claim 1, wherein said sweep trace (12) has and described contact hole (18) and/or the described zone stack of disclination and the outshot (12b) of shielded from light of occurring.
7. according to the liquid crystal indicator of claim 6, also comprise the black substrate (16) with described data line (13) stack, wherein said black substrate (16) have and pixel described in the wide part (16a) that superposes of pixel region between data line (13) and the outshot (12b).
8. according to the liquid crystal indicator of claim 6, form electrostatic capacitance between wherein said outshot (12b) and the wiring (14).
9. the manufacture method of a LCD, this LCD comprises: thin film transistor (TFT) (15), the wiring (14) that is connected with described thin film transistor (TFT) (15), the pixel electrode (17) that is electrically connected with described wiring (14) and be formed on oriented film (107) on the described pixel electrode (17) comprise step:
Go up formation insulation course (104 to 106) at thin film transistor (TFT) (15) and wiring (14);
In insulation course (104 to 106), form contact hole (18), expose the end (14b) of described wiring (14) by contact hole (18);
Go up formation pixel electrode (17) at insulation course (104 to 106), pixel electrode (17) is electrically connected with wiring (14) by contact hole (18);
Go up formation oriented film (107) at pixel electrode (17),
The step that wherein forms contact hole (18) is included in the step that forms contact hole (18) with the position of the zone stack that disclination occurs.
10. according to the manufacture method of the LCD of claim 9, insulation course (104 to 106) comprises a plurality of laminated insulation films (104 to 106),
The step that forms contact hole (18) comprises the step that forms opening (104a to 106a) respectively in a plurality of dielectric films (104 to 106).
11. manufacture method according to the LCD of claim 9, insulation course (104 to 106) comprise the passivating film (104) that is formed on the on-off element (15), be formed on the color layer (105) on the described passivating film (104) and be formed on described passivating film (104) and color layer (105) on flatted membrane (106)
The step that forms described contact hole (18) comprises the step that forms opening (104a to 106a) respectively in passivating film (104), color layer (105) and flatted membrane (106), thereby contact hole (18) forms taper on the whole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02127417 CN1244012C (en) | 2002-08-02 | 2002-08-02 | Liquid crystal device and manufacture thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02127417 CN1244012C (en) | 2002-08-02 | 2002-08-02 | Liquid crystal device and manufacture thereof |
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| CN1472569A CN1472569A (en) | 2004-02-04 |
| CN1244012C true CN1244012C (en) | 2006-03-01 |
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| JP4927430B2 (en) | 2006-04-12 | 2012-05-09 | 株式会社 日立ディスプレイズ | Liquid crystal display |
| CN101504500B (en) * | 2008-02-04 | 2011-08-31 | 北京京东方光电科技有限公司 | Image element structure of thin-film transistor LCD array substrates |
| CN108490709B (en) * | 2018-03-29 | 2021-06-01 | 武汉华星光电技术有限公司 | Array substrate and manufacturing method thereof |
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