CN1241269C - 薄膜晶体管及具有该薄膜晶体管之显示装置 - Google Patents
薄膜晶体管及具有该薄膜晶体管之显示装置 Download PDFInfo
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- CN1241269C CN1241269C CNB021301204A CN02130120A CN1241269C CN 1241269 C CN1241269 C CN 1241269C CN B021301204 A CNB021301204 A CN B021301204A CN 02130120 A CN02130120 A CN 02130120A CN 1241269 C CN1241269 C CN 1241269C
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- film
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- dielectric
- insulating film
- thin
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP48945/02 | 2002-02-26 | ||
JP48945/2002 | 2002-02-26 | ||
JP2002048945 | 2002-02-26 | ||
JP139411/2002 | 2002-05-15 | ||
JP2002139411A JP2003324201A (ja) | 2002-02-26 | 2002-05-15 | 薄膜トランジスタ及びそれを用いた表示装置 |
JP139411/02 | 2002-05-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1441501A CN1441501A (zh) | 2003-09-10 |
CN1241269C true CN1241269C (zh) | 2006-02-08 |
Family
ID=27759702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021301204A Expired - Fee Related CN1241269C (zh) | 2002-02-26 | 2002-08-22 | 薄膜晶体管及具有该薄膜晶体管之显示装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20030160283A1 (zh) |
JP (1) | JP2003324201A (zh) |
KR (1) | KR100480412B1 (zh) |
CN (1) | CN1241269C (zh) |
TW (1) | TW560074B (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI238675B (en) | 2004-01-19 | 2005-08-21 | Hitachi Displays Ltd | Organic light-emitting display and its manufacture method |
JP4652704B2 (ja) * | 2004-03-11 | 2011-03-16 | キヤノン株式会社 | 有機半導体素子 |
JP2006024754A (ja) * | 2004-07-08 | 2006-01-26 | Advanced Lcd Technologies Development Center Co Ltd | 配線層の形成方法、配線層および薄膜トランジスタ |
US7579224B2 (en) * | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
KR100713985B1 (ko) * | 2005-05-16 | 2007-05-04 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 박막트랜지스터 제조방법 |
JP5154009B2 (ja) * | 2005-10-21 | 2013-02-27 | 株式会社ジャパンディスプレイイースト | 有機シロキサン系絶縁膜の製造方法、及び、この製造方法で製造した有機シロキサン系絶縁膜を層間絶縁として用いた液晶表示装置の製造方法 |
CN104681447A (zh) | 2009-09-04 | 2015-06-03 | 株式会社半导体能源研究所 | 半导体器件的制造方法 |
JP5445115B2 (ja) | 2009-12-24 | 2014-03-19 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
JP6276496B2 (ja) * | 2012-04-27 | 2018-02-07 | エルジー ディスプレイ カンパニー リミテッド | 薄膜トランジスタの製造方法、表示装置および有機elディスプレイの製造方法 |
US9431487B2 (en) * | 2013-01-11 | 2016-08-30 | International Business Machines Corporation | Graphene layer transfer |
KR102104358B1 (ko) * | 2013-03-14 | 2020-05-29 | 엘지디스플레이 주식회사 | 박막 트랜지스터와 그 제조방법 및 표시장치 |
CN103456739A (zh) * | 2013-08-16 | 2013-12-18 | 北京京东方光电科技有限公司 | 阵列基板及其制造方法和显示装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5019807A (en) * | 1984-07-25 | 1991-05-28 | Staplevision, Inc. | Display screen |
JPH01235254A (ja) * | 1988-03-15 | 1989-09-20 | Nec Corp | 半導体装置及びその製造方法 |
US5709958A (en) * | 1992-08-27 | 1998-01-20 | Kabushiki Kaisha Toshiba | Electronic parts |
US5955140A (en) * | 1995-11-16 | 1999-09-21 | Texas Instruments Incorporated | Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates |
US6294799B1 (en) * | 1995-11-27 | 2001-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating same |
US5753559A (en) * | 1996-01-16 | 1998-05-19 | United Microelectronics Corporation | Method for growing hemispherical grain silicon |
US5880018A (en) * | 1996-10-07 | 1999-03-09 | Motorola Inc. | Method for manufacturing a low dielectric constant inter-level integrated circuit structure |
JP3435325B2 (ja) * | 1997-02-13 | 2003-08-11 | 株式会社東芝 | 低誘電率珪素酸化膜の形成方法 |
JP4111569B2 (ja) * | 1997-08-22 | 2008-07-02 | エルジー.フィリップス エルシーデー カンパニー,リミテッド | 薄膜トランジスタ型液晶表示装置およびその製造方法 |
JP4057127B2 (ja) * | 1998-02-19 | 2008-03-05 | セイコーエプソン株式会社 | アクティブマトリックス基板及びアクティブマトリックス基板の製造方法並びに液晶装置 |
JP2000196099A (ja) * | 1998-12-28 | 2000-07-14 | Matsushita Electronics Industry Corp | 薄膜トランジスタおよびその製造方法 |
JP2000269204A (ja) * | 1999-01-13 | 2000-09-29 | Hitachi Chem Co Ltd | 半導体装置 |
JP3678065B2 (ja) * | 1999-08-19 | 2005-08-03 | 株式会社デンソー | 集積化フォトセンサ |
JP2003526944A (ja) * | 2000-03-13 | 2003-09-09 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体装置を製造する方法 |
US6576568B2 (en) * | 2000-04-04 | 2003-06-10 | Applied Materials, Inc. | Ionic additives for extreme low dielectric constant chemical formulations |
KR20030073006A (ko) * | 2002-03-08 | 2003-09-19 | 삼성전자주식회사 | 저유전율 절연막을 사용하는 박막 트랜지스터 기판 및 그제조 방법 |
-
2002
- 2002-05-15 JP JP2002139411A patent/JP2003324201A/ja active Pending
- 2002-06-18 TW TW091113257A patent/TW560074B/zh not_active IP Right Cessation
- 2002-07-20 KR KR10-2002-0042745A patent/KR100480412B1/ko not_active IP Right Cessation
- 2002-07-22 US US10/201,423 patent/US20030160283A1/en not_active Abandoned
- 2002-08-22 CN CNB021301204A patent/CN1241269C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW560074B (en) | 2003-11-01 |
US20030160283A1 (en) | 2003-08-28 |
JP2003324201A (ja) | 2003-11-14 |
KR100480412B1 (ko) | 2005-04-06 |
CN1441501A (zh) | 2003-09-10 |
KR20030070807A (ko) | 2003-09-02 |
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Effective date of registration: 20111123 Address after: Chiba Prefecture, Japan Co-patentee after: Panasonic Liquid Crystal Display Co.,Ltd. Patentee after: Hitachi Displays, Ltd. Address before: Chiba Prefecture, Japan Co-patentee before: IPS pioneer support society Patentee before: Hitachi Displays, Ltd. Effective date of registration: 20111123 Address after: Chiba Prefecture, Japan Co-patentee after: IPS Pioneer Support Society Patentee after: Hitachi Displays, Ltd. Address before: Chiba Prefecture, Japan Patentee before: Hitachi Displays, Ltd. Effective date of registration: 20111123 Address after: Chiba Prefecture, Japan Patentee after: Hitachi Displays, Ltd. Address before: Tokyo, Japan Patentee before: Hitachi, Ltd. |
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Granted publication date: 20060208 Termination date: 20120822 |