CN1219236A - Method and device for determining characteristic parameters by polarised light - Google Patents
Method and device for determining characteristic parameters by polarised light Download PDFInfo
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- CN1219236A CN1219236A CN97194713.9A CN97194713A CN1219236A CN 1219236 A CN1219236 A CN 1219236A CN 97194713 A CN97194713 A CN 97194713A CN 1219236 A CN1219236 A CN 1219236A
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- light beam
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
- G01B11/065—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization using one or more discrete wavelengths
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N2021/216—Polarisation-affecting properties using circular polarised light
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N2021/217—Measuring depolarisation or comparing polarised and depolarised parts of light
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/061—Sources
- G01N2201/06113—Coherent sources; lasers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/12—Circuits of general importance; Signal processing
- G01N2201/123—Conversion circuit
Abstract
Plasma interaction with solid surface (during the etching or deposition) is monitored by utilising the effect of changes of state of polarisation of light. The substrate changes physical parameters during plasma processing. The monitored light is a representative of the composition of substrate surface as well as composition changes associated with plasma processing. The light reflected from the surface is analysed by a system commonly used in ellipsometry, but modified by implementation of a new method of calculation. Periodicity in state of polarisation of light is used as a reference point to monitor the occurrences on surface in real time. It is also used for quantitative and qualitative chemical analysis of the surface.
Description
Invention field
The present invention relates to one or more method of characteristic parameters of definite material on the throne and device.Particularly but be not limited to relate to be used on the throne, determine the improvement single beam ellipsometer technology of one or more characteristic parameters in real time.
Background technology
The ellipsometer technology is a kind of optical technology of the supervision two media interface conditions that is widely known by the people.In general ellipsometer technical scheme, the surface that the direct directive of light beam changes.Light beam contacts with causing the surface that its polarization state changes.By the interactional parameter of statement is determined in analysis initial and polarization state measurement result when finishing.
In the experimental provision of prior art, the light beam that suitable sources (normally laser instrument) is sent produces the known light beam of polarization state by polarizer.This light beam interacts with optical system (surface) to be studied and changes its polarization state.Polarization state after the change by after connect photoelectric detector the polarization analysis instrument obtain.The polarization analysis instrument generally is a rotation polarizer and photoelectric detector generally is a photomultiplier.
Reflect ellipse adopted partially surveying and be used to surface and thin film study.This technology can be used for determining superficial growth parameter (for example oxidation, deposit, absorption, diffusion etc.) or surface removal (for example etching, desorb, sputter, diffusion etc.).
About the situation of ellipsometer amount art can be shown " ellipsometer measurement art and polarized light " (North Holland, Amsterdam published in 1977 years) referring to R.M.A.Azzam and N.M.Bashara.Parameter determines to need to analyze basic ellipsometer measurement art equation:
Here ψ and Δ are ellipse adopted partially surveying parameter:
And
Δ=δ
p-δ
s
Here R is the Fresnel reflection coefficient
E is the electricity vector
δ is phase shift
P, s are respectively parallel and vertical component
The ellipsometer measurement art only relates to the measurement of tan ψ (variation of reflection back quotient of amplitudes) and Δ (variation of reflection back phase place) basically.These parameters are functions of surface refractive index, refractive index of substrate, used light beam wavelength, incident angle, temperature and film thickness.
In order to determine the physical property of material from the optical measurement result, mathematical model must be based on above-mentioned equation.D.E.Aspens and A.A.Studna in " applied optics " (14,1, (1975) 220) and Y.Hayashi on Japanese applied physics periodical (29,11 (1990) 2514), described a kind of like this model and the definition:
And
Numerical value a and b can determine from photoelectric detector signal in experiment:
And
Here I
0For analyzing the average reflection intensity I in the whole anglec of rotation of polarizer
kBe in angle A for analyzing polarizer
kThe time measured intensity.
The ellipse that each polarization state changes is measured the numerical value that all produces a ψ and a Δ.Therefore even utilize best prior art, at the numerical value of other parameter known or hypothesis situation under also can only determine two kinds of surface naturies.
Art methods is by taking multiple measurements the approach of seeking to overcome this restriction under various conditions.Disclosed a kind of like this technology in U.S. Patent No. 5166752, it has determined ψ and Δ under the various incident angles of laser beam.In list of references, various angles are passed through to focus on realization from the teeth outwards behind one or more lens by making directional light.
Another approach provides equips a plurality of ellipsometers identical but that incident angle is different.
Known systems can't monitor surface parameter by efficient real time.And do not adopt the technology of ellipsometer measurement art principle can measure etch rate/deposition rate in real time.Though there is several method can measure important surface parameter at present, they need accurate incident angle control and trickle machinery and optical correction.
Therefore need a kind of energy (and reasonable be real-time) on the throne determine and/or the supervision material technology in the apparatus and method of surface parameter.
Target of the present invention provides the apparatus and method that the one or more characteristic parameters of material are determined and/or monitored to a kind of energy (and reasonable be real-time) on the throne.
The further target of the present invention be overcome in the prior art utilize the ellipsometer measurement art determine and/or the monitoring form surface properties aspect one or more restrictions of existing.
From following description, can understand other target better.
Summary of the invention
According to one aspect of the present invention, provide a kind of and during material processed, determined and/or the one or more method of characteristic parameters of supervision material, it is characterized in that comprising:
Make the light beam directive material of known polarization state;
Analysis is from the variation of material beam reflected with definite polarization state;
The variation that monitors polarization state in a period of time is to obtain the periodicity that polarization state changes; And
According to the one or more characteristic parameters of computation of Period material that obtained.
According to another aspect of the present invention, provide a kind of method of determining and/or monitoring material thickness variation speed in surface etch or the deposition process on the throne.It is characterized in that comprising:
Make the light beam directive known materials of known polarization state;
Analysis is from the variation of material beam reflected with definite polarization state;
The variation that monitors polarization state in a period of time is to obtain the periodicity that polarization state changes; And
By calculating speed divided by etching or deposit characteristic thickness required time according to the obtain material characteristics thickness that periodically obtains.
The step of analysis of material folded light beam further may further comprise the steps: make folded light beam pass through pivot analysis instrument or polarizer, and handle from photodetector signal in treating apparatus.
The step of handling from photoelectric detector signal in treating apparatus can be to utilize ellipsometer measurement art equation to finish in computing machine.
The one or more characteristic parameters that calculated can depend on one or more known parameters.In an application, if material is known, then can determine its characteristic thickness, and can calculate etching or deposition rate.In another is used,, then can discern material if material is that unknown still deposition of materials or removal thickness is known.Can also the gauging surface temperature in preferred embodiment of the present invention.
Method of the present invention further comprises for example to carrying out Fourier transform from photoelectric detector signal to discern the step of a plurality of different cycles signals.
Utilize curve fitting technique can calculate the cycle of being obtained.
The step of the light beam directive material of known polarization state is comprised make multiple light beams to have the step of incident under the situation concurrently at different angles or different wave length or the two.
According to one aspect of the present invention, provide a kind of and on the thronely during material processed determined and/or monitor the one or more devices of levying parameter of holding of material, it is characterized in that comprising:
The light source of known polarization state;
Make the device of light beam directive material;
Analysis is from the device of material beam reflected to determine that polarization state changes;
The variation that monitors polarization state in a period of time is to obtain the device of polarization state period of change; And
Device according to the one or more characteristic parameters of obtaining computation of Period material.
Brief description of drawings
By can further understanding the present invention below in conjunction with the accompanying drawing description of this invention.
Fig. 1 is for determining and/or monitor the device synoptic diagram of plasma etching subtegulum characteristic parameter;
Fig. 2 shows the periodic property of skin depth polarization state;
Fig. 3 shows according to real-time etch rate of the present invention and determines situation;
Fig. 4,5 and 6 shows according to end point etch of the present invention and detects stable condition really.
The preferred mode that carries out an invention
Referring to Fig. 1, it shows the device of determining and monitoring material surface during the plasma etching.In this embodiment, material is a polycrystalline silicon substrate 6.Device comprises coherent source 1, is laser instrument here.In the embodiment in figure 1, light source 1 is the LGR7631A type He-Ne laser instrument of Simens production.Laser instrument comprises continuous power supply 2.
The polarization state of incident beam 3 is determined by fixing polarizer 5.Incident beam 3 can be linear polarization, elliptic polarization or circular polarization.In the embodiment of the invention shown in Figure 1, no matter how polarization state all must be fixed.For simplicity, thus fixing polarizer 5 can be included in and need not discrete element in the laser instrument 1.
Incident beam incides on the semiconductor chip 6 with angle φ and reflects to rotation polarizer 7.In the ellipsometer measurement art method of prior art, known angle φ is very crucial.It is following that what it will be appreciated that is that whether angle is known not crucial in the methods of the invention.
The given frequency rotation that rotation polarizer 7 is determined according to modulation power source 8.In described embodiment, polarizer has comparatively fast (3Hz) and slow (1.5Hz) two kinds of speed.Though the rotation polarizer is preferable selection, also the element that can adopt other that polarization of folded light beam is modulated.
Though what adopt in the described preferred embodiment is polarizer of fixing 5 and the polarizer 7 that rotates, and also can adopt structure conversely.That is, the polarizer of close light source can rotate and fix near the polarizer of detecting device.This layout is beneficial in multiple beam is used.
Laser rays interference filter 9 is with some the optical noise filtering in the folded light beam 10.Detecting device 11 produces and is proportional to the simulating signal 12 that incides light intensity on the detecting device.Detecting device 11 is by power supply 13 power supplies.In the embodiment in figure 1, detecting device 11 is that Hammamatsu photomultiplier and power supply 13 are high-voltage power supply.
This device can be used for various application scenarios.In Fig. 1, device is used to plasma etching machine, and the etching machine comprises cavity 17. these cavitys and has top electrode 18 and bottom electrode 19, and substrate 6 is fixed on it.Input optical window 20 is fixed on the cavity wall with output optical window 21.
In an example, substrate 6 is at SiO
2On the layer one deck polysilicon layer is arranged.The refractive index N of polysilicon
2Be 3.6 and SiO
2Refractive index N
3Be 1.457.The wavelength X of laser instrument is adjusted to 632.8nm and the incident angle that arrives the polysilicon layer surface is 70 °.Phase shift delta on the layer and Fresnel coefficient by under establish an equation and obtain:
Here N is a refractive index
D is a thickness
Discuss to some extent in the treatise of this equation not strange and the Azzam that mentions in front and Bashara.
The inventor finds that the polarization state of reflection lasering beam is made periodically-varied along with substrate 6 surperficial bed thickness change.Fig. 2 shows the periodic property of the ψ and the Δ of polycrystalline silicon substrate 6.This shows that these parameters are done cyclical variation with film thickness.Polysilicon layer etch thicknesses G is as follows with corresponding polarization state numerical value ψ and Δ:
14.59 ° of G=0 dust Δ=180 ° ψ
G=300 dust Δ=26.59 ° ψ=27.23 °
G=400 dust Δ=20.68 ° ψ=29.24 °
Said apparatus is used to monitor during the etching reflecting bundle polarization state as the function of time.Adopt aforementioned equation (7), be converted into polarization state and be drawn as the time dependent curve shown in the 4-6 from the signal of photomultiplier 11.The curve that draws is periodic, and its cycle equals deposit (etching) the feature required time of amount of material.For polysilicon, characteristic quantity is 90nm.Therefore etch rate (being growth rate in deposition process) can directly be defined as:
Here E
tBe etch rate, T
cFor characteristic thickness P is to be the deposit or the removal material characteristics thickness required time of unit with the second.
The characteristic thickness of other material can be determined from theoretical or experiment.In case determine characteristic thickness, then can be directly on the throne and obtain etch rate in real time from the polarization state cycle.
Characteristic thickness is the function of wavelength and material behavior.For same material, the function of wavelength that short wavelength is corresponding less.Following table has been listed the characteristic thickness of (HeNe laser instrument) some materials under the 632.8nm wavelength.Wavelength can be used for complication system as additional discrimination to the dependence of characteristic thickness.
| Material | ????Tc(nm) |
| Polysilicon | ????90 |
| Silicon nitride | ????129.1 |
| ????SiO 2 | ????140 |
It is evident that, determining to there is no need to measure the whole cycle before the etch rate.In signal Processing, after obtaining several data points, can adopt the curve modeling technique to come the cycle is predicted.Along with the increase of data volume, the degree of confidence of prediction also can improve.
Etch rate can be expressed as the etch rate article on plasma curve in body processing time.Fig. 3 shows the curve of differential form.Fig. 3 shows the curve in the etch rate article on plasma body processing time of polysilicon and SIMOX.Plasma chamber pressure is 200mT, and air-flow is the SF of 20sccm
6With the He of 10sccm, the power density of plasma is 0.57W/cm
2RF.Measurement utilize device shown in Figure 1 on the throne and real-time under carry out.Need not to know the refractive index of material.
Also can determine the differential etch rate of alloy material or differentiate alloy composition from the material etch rate that is obtained.Alloy polarization state period of change is superimposed upon single component on the cycle.Utilize Fourier transform can isolate the cycle and analyze.
Other parameter can be determined from experimental data.If the material rate or the thickness of removal or deposit are known, then can differentiate material by the count cycle number.For example, if the time dependent curve display of polarization state goes out 5 cycles, and the material of removing adds up to 450nm through measuring, and then material must be polysilicon (450nm equals 90nm divided by 5, at this moment the characteristic thickness of polysilicon).
Can determine end point by the differential variation that monitors polarization state.Fig. 4 shows following curve
Here V
sBe polarization state
T is the time
End point is very obvious.
End point can be determined over time by directly monitoring polarization state.Fig. 5 shows polarization state curve (being ψ here) in time.The periodic property of polarization state clearly and end point also determine easily.
Fig. 6 shows the time dependent curve of polarization state Δ.The periodic property of polarization state clearly and end point also determine easily.
This method can also be used to the surface temperature during measuring etching or deposit under known other parameter situation.Because characteristic thickness is the function of the refractive index of temperature dependent, so this is feasible.
The above-mentioned application scenario that preferred embodiment is described is a characteristic parameter of determining and monitor material during plasma etching.For the technician in ellipsometer measurement art field, above-mentioned technology obviously is not limited to said circumstances but can be applied to any surperficial change procedure.
Though shown in the device of Fig. 1 is the oval measuring instrument of single beam, method and apparatus of the present invention can expand to the multiple beam system.If to big substrate surface carry out words that multiple spot monitors this just of great use.In this application, what rotate the polarizer most convenient is to be positioned near the light source as mentioned above.In the multiple beam device, each light source can different angles incides on the material and has different wavelength.Multiple beam can make method and apparatus of the present invention extend to complication system.
Technology of the present invention is be sure of can be applied to following occasion at least:
*Etch rate control
*Deposition rate control
*Chemical composition is determined
*Stain and determine
*Multi-wavelength is analyzed
*Surface temperature measurement
*Surface uniformity is analyzed
*Layer thickness is measured
The above-mentioned description of this invention is an illustrative nature, to those skilled in the art, under the prerequisite that does not depart from the scope of the invention and spirit be easy to make various improved.
Claims (30)
1. on the thronely during material processed determine and/or monitor the one or more method of characteristic parameters of material for one kind, it is characterized in that comprising:
Make the light beam directive material of known polarization state;
Analysis is from the variation of material beam reflected with definite polarization state;
The variation that monitors polarization state in a period of time is to obtain the cycle that polarization state changes; And
According to the one or more characteristic parameters of computation of Period material that obtained.
2. the method for claim 1 is characterized in that the light beam in the directive material step is a branch of or the multi beam coherent light beam.
3. method as claimed in claim 2 is characterized in that the incident angle and/or the wavelength difference of every light beams.
4. as any described method among the claim 1-3, it is characterized in that light beam is a laser beam.
5. as any described method among the claim 1-4, it is characterized in that light beam is linear polarization, elliptic polarization or circularly polarized light.
6. as any described method among the claim 1-5, it is characterized in that the polarization state in directive material step or the analytical procedure is changeless or modulation.
7. method as claimed in claim 6 is characterized in that directive material step or analytical procedure comprise to adopt fixedly polarising means to determine the light beam polarization state.
8. method as claimed in claim 6 is characterized in that directive material step or analytical procedure comprise that the employing modulating device comes modulated beam of light.
9. method as claimed in claim 8 is characterized in that modulating device is modulating unit, pivot analysis instrument unit, rotation polarizer unit or whirl compensator unit.
10. as any described method among the claim 1-9, it is characterized in that material is solid-state, liquid state or gaseous material.
11., it is characterized in that material is made up of one or more materials as any described method among the claim 1-10.
12. method as claimed in claim 11 is characterized in that multiple species distribution distributes in layer or with compound form.
13., it is characterized in that described material comprises polysilicon, silicon nitride, silicon dioxide and SIMOX as claim 11 or 12 described methods.
14., it is characterized in that material is the semiconductor chip that comprises polysilicon layer or SIMOX layer as any described method among the claim 1-13.
15., it is characterized in that analytical procedure may further comprise the steps at least as any described method among the claim 8-14:
Make the material beam reflected pass through modulating device;
With optical filter optical filtering folded light beam to remove or to suppress optical noise;
With optical detection device detection of reflected light beam;
Utilize the analog signal conversion of analog-digital commutator self-test device in future to be numerical signal; And
Handle the signal of self-test device or conversion equipment.
16. method as claimed in claim 15 is characterized in that in the optical filtering step adopting the laser rays interference filter and adopt the treating apparatus that comprises computing machine in treatment step.
17. method as claimed in claim 15 is characterized in that utilizing in treating apparatus ellipsometer measurement art equation to handle the signal of self-test device or conversion equipment.
18., it is characterized in that characteristic parameter comprises the material and the material temperature of material thickness, material or the constituent material of material gross thickness or every layer thickness, deposit and removal as any described method among the claim 1-17.
19. the method determining and/or monitor material thickness variation speed on the throne during surface etch or deposition process is characterized in that comprising as any described method among the claim 1-18, and further may further comprise the steps:
By the material characteristics thickness that will obtain according to the obtaining cycle divided by etching or deposit characteristic thickness required time computation rate.
20. the device determining and/or monitor the one or more characteristic parameters of material on the throne during material processed is characterized in that comprising:
The light source of known polarization state;
Make the device of light beam directive material;
The device of analysis of material folded light beam;
The variation that monitors polarization state in a period of time is to obtain the device of polarization state period of change; And
Treating apparatus is used for according to the one or more characteristic parameters of computation of Period material that obtained.
21. device as claimed in claim 20 is characterized in that light beam is a branch of or the multi beam coherent light beam.
22. device as claimed in claim 21 is characterized in that the incident angle and/or the wavelength difference of every light beams.
23., it is characterized in that light beam is a laser beam as any described device among the claim 20-22.
24., it is characterized in that light beam is linear polarization, elliptic polarization or circularly polarized light as any described device among the claim 20-23.
25., it is characterized in that in device that makes light beam directive material and analytical equipment, comprising respectively fixedly polarizer device and modulating device or comprise modulating device respectively and fixing polarizer device as any described device among the claim 20-24.
26. method as claimed in claim 25 is characterized in that modulating device is modulating unit, pivot analysis instrument unit, rotation polarizer unit or whirl compensator unit.
27., it is characterized in that monitoring arrangement comprises the filtering apparatus of optical noise in removal or the inhibitory reflex light beam and the photoelectric detector of detection of reflected light beam as any described device among the claim 20-26.
28. device as claimed in claim 27 is characterized in that photoelectric detector is a photomultiplier.
29., it is characterized in that treating apparatus is a computing machine as any described device among the claim 20-28.
30. as any described device among the claim 20-28, it is characterized in that device further comprises the plasma etch chamber body, described cavity comprises makes light beam input window of injecting and the outgoing window that is used for folded light beam, be placed with top electrode and bottom electrode in the cavity, material therefor is positioned on the bottom electrode.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AUPN8752A AUPN875296A0 (en) | 1996-03-19 | 1996-03-19 | Method and apparatus for monitoring materials processing |
| AUPN8752 | 1996-03-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1219236A true CN1219236A (en) | 1999-06-09 |
Family
ID=3793065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN97194713.9A Pending CN1219236A (en) | 1996-03-19 | 1997-03-19 | Method and device for determining characteristic parameters by polarised light |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP2001519891A (en) |
| KR (1) | KR20000064701A (en) |
| CN (1) | CN1219236A (en) |
| AU (1) | AUPN875296A0 (en) |
| IL (1) | IL126289A0 (en) |
| WO (1) | WO1997035177A1 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102507040A (en) * | 2011-11-10 | 2012-06-20 | 复旦大学 | Thin film temperature measurement method based on ellipsometer |
| CN102519364A (en) * | 2011-11-30 | 2012-06-27 | 上海华力微电子有限公司 | Optical detection method and computer-aided system for plasma etching structure |
| CN103076287A (en) * | 2013-01-25 | 2013-05-01 | 中国人民解放军陆军军官学院 | Method for detecting damage of first wall of tokamak fusion reactor with polarized light |
| CN103673877A (en) * | 2012-08-28 | 2014-03-26 | 特克斯玛格销售有限公司 | Sensor for capturing a moving material web |
| CN105136679A (en) * | 2015-09-02 | 2015-12-09 | 北京航玻新材料技术有限公司 | Optical material surface quality evaluation method based on ellipsometer and application of optical material surface quality evaluation method |
| CN105445191A (en) * | 2015-11-30 | 2016-03-30 | 中国科学院长春应用化学研究所 | Multi-channel in-situ measurement atmosphere pool |
| CN105874165A (en) * | 2014-03-07 | 2016-08-17 | 哈利伯顿能源服务公司 | Wavelength-dependent light intensity modulation in multivariate optical computing devices using polarizers |
| CN104641224B (en) * | 2012-08-02 | 2018-08-31 | 国家科学研究中心 | Method for the crystal structure for analyzing polycrystalline semiconductor material |
| CN113281268A (en) * | 2021-05-31 | 2021-08-20 | 华中科技大学 | Data analysis method and system for rotating polarization device spectrum ellipsometer |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19734646A1 (en) | 1997-08-11 | 1999-03-04 | Bosch Gmbh Robert | Ellipsometer measuring device |
| US6583875B1 (en) | 2000-05-19 | 2003-06-24 | Therma-Wave, Inc. | Monitoring temperature and sample characteristics using a rotating compensator ellipsometer |
| FR2809491B1 (en) * | 2000-05-26 | 2008-07-04 | Production Rech S Appliquees | METHOD AND APPARATUS FOR ELLIPSOMETRIC METROLOGY FOR SAMPLE CONTAINED IN A CHAMBER OR THE LIKE |
| KR100688980B1 (en) * | 2005-07-01 | 2007-03-08 | 삼성전자주식회사 | Apparatus for monitoring plasma and method of monitoring plasma |
| CN103486974B (en) * | 2013-09-23 | 2016-04-13 | 中国科学院微电子研究所 | A kind of Spectroscopic Ellipsometry measurement mechanism and method |
| CN103759661B (en) * | 2013-11-04 | 2016-06-29 | 北京理工大学 | A kind of device for measuring film thickness and refractive index in medium |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3985447A (en) * | 1975-08-29 | 1976-10-12 | Bell Telephone Laboratories, Incorporated | Measurement of thin films by polarized light |
| FR2491234B1 (en) * | 1980-09-29 | 1986-06-20 | Labo Electronique Physique | ELECTRONIC DEVICE FOR THE ANALYSIS AND CALCULATION OF FOURIER COEFFICIENTS OF A PERIODIC FUNCTION, AND ELLIPSOMETER COMPRISING SUCH A DEVICE |
| IT1184100B (en) * | 1985-04-23 | 1987-10-22 | Cselt Centro Studi Lab Telecom | STATIC INTERFEROMETRIC ELLIPSOMETER |
| US4850711A (en) * | 1986-06-13 | 1989-07-25 | Nippon Kokan Kabushiki Kaisha | Film thickness-measuring apparatus using linearly polarized light |
| DE4301889A1 (en) * | 1993-01-14 | 1994-07-21 | Sentech Instr Gmbh | Method for determining characteristic sizes of transparent layers by means of ellipsometry |
-
1996
- 1996-03-19 AU AUPN8752A patent/AUPN875296A0/en not_active Abandoned
-
1997
- 1997-03-19 CN CN97194713.9A patent/CN1219236A/en active Pending
- 1997-03-19 KR KR1019980707424A patent/KR20000064701A/en not_active Application Discontinuation
- 1997-03-19 WO PCT/AU1997/000181 patent/WO1997035177A1/en not_active Application Discontinuation
- 1997-03-19 JP JP53298597A patent/JP2001519891A/en active Pending
- 1997-03-19 IL IL12628997A patent/IL126289A0/en unknown
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| CN102507040B (en) * | 2011-11-10 | 2013-08-21 | 复旦大学 | Thin film temperature measurement method based on ellipsometer |
| CN102507040A (en) * | 2011-11-10 | 2012-06-20 | 复旦大学 | Thin film temperature measurement method based on ellipsometer |
| CN102519364A (en) * | 2011-11-30 | 2012-06-27 | 上海华力微电子有限公司 | Optical detection method and computer-aided system for plasma etching structure |
| CN102519364B (en) * | 2011-11-30 | 2014-10-15 | 上海华力微电子有限公司 | Optical detection method and computer-aided system for plasma etching structure |
| CN104641224B (en) * | 2012-08-02 | 2018-08-31 | 国家科学研究中心 | Method for the crystal structure for analyzing polycrystalline semiconductor material |
| CN103673877A (en) * | 2012-08-28 | 2014-03-26 | 特克斯玛格销售有限公司 | Sensor for capturing a moving material web |
| CN103076287A (en) * | 2013-01-25 | 2013-05-01 | 中国人民解放军陆军军官学院 | Method for detecting damage of first wall of tokamak fusion reactor with polarized light |
| CN105874165B (en) * | 2014-03-07 | 2019-09-06 | 哈利伯顿能源服务公司 | The relevant intensity modulation of wavelength of polarizer is used in multivariate optical computing device |
| CN105874165A (en) * | 2014-03-07 | 2016-08-17 | 哈利伯顿能源服务公司 | Wavelength-dependent light intensity modulation in multivariate optical computing devices using polarizers |
| CN105136679A (en) * | 2015-09-02 | 2015-12-09 | 北京航玻新材料技术有限公司 | Optical material surface quality evaluation method based on ellipsometer and application of optical material surface quality evaluation method |
| CN105445191B (en) * | 2015-11-30 | 2018-08-24 | 中国科学院长春应用化学研究所 | Multichannel in situ measurement atmosphere pond |
| CN105445191A (en) * | 2015-11-30 | 2016-03-30 | 中国科学院长春应用化学研究所 | Multi-channel in-situ measurement atmosphere pool |
| CN113281268A (en) * | 2021-05-31 | 2021-08-20 | 华中科技大学 | Data analysis method and system for rotating polarization device spectrum ellipsometer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001519891A (en) | 2001-10-23 |
| WO1997035177A1 (en) | 1997-09-25 |
| KR20000064701A (en) | 2000-11-06 |
| IL126289A0 (en) | 1999-05-09 |
| AUPN875296A0 (en) | 1996-04-18 |
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